CN102176500A - Micro-nano structure for reducing dislocation concentration of GaN epitaxial growth and application thereof - Google Patents
Micro-nano structure for reducing dislocation concentration of GaN epitaxial growth and application thereof Download PDFInfo
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- CN102176500A CN102176500A CN 201110040708 CN201110040708A CN102176500A CN 102176500 A CN102176500 A CN 102176500A CN 201110040708 CN201110040708 CN 201110040708 CN 201110040708 A CN201110040708 A CN 201110040708A CN 102176500 A CN102176500 A CN 102176500A
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Abstract
The invention relates to a micro-nano structure for reducing dislocation concentration of GaN epitaxial growth and application thereof. The pattern of the micro-nano structure is composed of a plurality of closed units in an array arrangement, wherein each closed unit is in a triangular structure or hexagon structure formed by micro-nano raised ridges which are interconnected, and the sum of included angles formed by all closed units in a plane parallel to the surface of a substrate is an integral multiple of 180 degrees; the vertical cross section of each micro-nano raised ridge is in a polygon cross-section structure which is formed by respectively connecting a vertex with two end points at a bottom edge by two curves. The micro-nano structure is suitable for preparing LED (Light Emitting Diode) and growing GaN group materials. According to the invention, distribute dislocation defects in epitaxial growth can be distributed at the tops of the raised ridges which are interconnected, thereby eliminating the dislocation concentration in epitaxial growth, avoiding local high-density dislocation defective zones, improving antistatic breakdown capacity of LED devices and prolonging the service life of LED devices. Meanwhile, the raised ridge structure is beneficial to the improvement of the light extraction efficiency of LEDs.
Description
Technical field
The present invention relates to a kind of substrat structure and the application thereof in semiconductor material growing fields such as GaN, relate in particular to and a kind ofly can effectively control and reduce the LED substrate micro nano structure that GaN material when growth dislocation is concentrated, to improve the antistatic breakdown performance of LED.
Background technology
Light-emitting diode (LED) is a kind of electronic device that electric energy can be converted into luminous energy and have diode characteristic.In recent years, along with GaN base blue light, green glow and the develop rapidly of ultraviolet leds technology, LED has been widely used in fields such as traffic indication, decorative lighting and LCD be backlight.Even in the general lighting field, LED also has the great potential and the trend of alternative traditional lighting light source.As light source of new generation, advantage such as LED has that volume is little, in light weight, energy-saving and environmental protection, green health and long-life.The electro-optical efficiency of LED, reliability and cost are several key factors that can decision LED replace the traditional lighting light source.If can not realize highly reliable, long-life led light source, even light efficiency is good again, high maintenance cost must limit its application.
The electro-optical efficiency of LED is explained by internal quantum efficiency and two kinds of efficient transition forms of external quantum efficiency.Internal quantum efficiency depends primarily on the quality of epitaxial material and the structure of epitaxial loayer, and external quantum efficiency then depends on substrate, chip structure and encapsulation technology.Because the lattice mismatch between GaN material and backing material sapphire commonly used or the Si is bigger, cause that the Grown GaN crystal has higher dislocation density on sapphire or Si substrate, cause harmful effects such as Carrier Leakage and non-radiative recombination center increase, make the device internal quantum efficiency descend, also reduced the reliability of LED simultaneously.On the other hand because GaN material refractive index is higher than Sapphire Substrate, air and outer enclosure resin, the photon that active area produces have 70% the GaN layer up and down two repeatedly total reflection takes place at the interface, reduced the light extraction efficiency of device, repeatedly reflect to be absorbed with the time and produce a large amount of heats, also can influence the stability of device work by surface electrode and material active area.
In order to improve internal quantum efficiency and the external quantum efficiency of GaN base LED, one of solution is before epitaxial growth prepares the GaN sill of led chip, earlier on Si or Sapphire Substrate, prepare micro nano structure, change the epitaxial process of GaN material on the substrate, dislocation extends upward raising device internal quantum efficiency in the inhibition material.Simultaneously reasonably micro nano structure can make originally to reenter in the reflection of the extraneous light of critical angle by micro nano structure and shine chip exterior in the critical angle, has improved light extraction efficiency.At present, the structure of the micro-nano figure for preparing on Si or Sapphire Substrate is isolated mutually raised points substantially, the planform of the raised points that these are isolated is hemisphere, circular cone, triangular pyramid, multiaspect pyramid etc., is plane (Fig. 1 is the SEM photo of the sapphire graphical substrate of cone-shaped structure) between the cellular construction.This class contains the Si of isolated bulge-structure or the optical efficiency of getting that sapphire substrate can significantly improve LED, improve external quantum efficiency, yet also occurring outer time-delay simultaneously easily concentrates in bulge-structure apex region generation dislocation, local formation high density dislocation defect area or cavity produce and reduce internal quantum efficiency, the antistatic breakdown capability that reduce device and reduction device reliability, the problem in life-span of LED under big current drives.
Summary of the invention
The objective of the invention is at above-mentioned defective of the prior art, the micro nano structure that provides a kind of GaN of reduction epitaxial growth dislocation to concentrate, dislocation concentration phenomenon when it can be reduced in growing GaN homepitaxy material on the substrates such as Si and sapphire improves the antistatic breakdown performance of device and the light extraction efficiency of chip.
For achieving the above object, the present invention has adopted following technical scheme:
A kind of concentrated micro nano structure of GaN epitaxial growth dislocation that reduces, it is characterized in that, the figure of described micro nano structure is made up of a plurality of closed cells of array arrangement, the polygonized structure of each closed cell for being interconnected to by micro-nano boss ridge, and each angle sum of forming in being parallel to the plane of substrate surface of each closed cell is 180 ° a integral multiple;
Described polygonized structure is triangular structure or hexagonal structure, if triangular structure, connect by planar structure between its arbitrary summit and the limit relative with this summit, and this both spacing is 0.4～15 μ m, if hexagonal structure, then connect by planar structure between its two parallel limit, and this both spacing also is 0.4～15 μ m;
The vertical cross-section of described micro-nano boss ridge is each polygonal cross-section structure that is connected by two curves between two end points of taper shape or summit and base.
Say that further the drift angle of described polygonal cross-section is 20～160 °, base length is 0.2～8 μ m, and the vertical range between cross section top margin and the base is 0.2-3 μ m.
The application of micro nano structure in preparation light-emitting diode and growing GaN base epitaxial material that aforesaid reduction GaN epitaxial growth dislocation is concentrated.
When isolating the materials such as LED graph substrate epitaxial growth GaN of projection (as shown in Figure 1) structure with tradition, earlier in base plane district nucleation, GaN material upwards growth gradually then, the dislocation that produces is concentrated in the bulge-structure top area, thereby cause the technology of local high dislocation density defect area and hole defect different, dislocation defects when the micro nano structure that the present invention proposes can be with epitaxial growth is distributed on the top of interconnected boss ridge, avoided the dislocation in the growth course to concentrate, avoid occurring local high dislocation density defect area, improve the antistatic breakdown capability and the life-span of LED device, the boss ridge structure also helps the optical efficiency of getting that improves LED simultaneously.
Description of drawings
Fig. 1 is the electromicroscopic photograph that has the sapphire graphical substrat structure of cone-shaped structure in the prior art;
Fig. 2 is the structural representation of a preferred embodiment of the present invention;
Fig. 3 is the electromicroscopic photograph of a preferred embodiment of the present invention.
Embodiment
For the substantial structure feature that makes sapphire graphical substrate of the present invention is easier to understand, technical solution of the present invention is done further nonrestrictive detailed description below in conjunction with a preferred embodiment and accompanying drawing thereof.
Consult Fig. 2, this sapphire graphical substrate micro nano structure is made up of interconnected many micro-nano boss ridge, and by each enclosed construction that the boss ridge that cooperatively interacts is formed is triangle, each the angle sum that forms in being parallel to the plane of substrate surface is 180 °, the spacing of the center line of adjacent two parallel ridges is 0.4～15 μ m, the vertical cross-section of boss ridge can be conical, also can be each polygonal cross-section structure that is connected by curve between two end points in summit and base.The drift angle of polygon vertical cross-section is 20～160 °, and base length is 0.2～8 μ m, and the vertical range between cross section top margin and the base is 0.2～3 μ m.
The preparation technology of this sapphire graphical substrate micro nano structure is as follows:
(1) cleans: utilize dense H
2SO
4: H
2O
2Clean Sapphire Substrate, then with a large amount of deionized water rinsings totally, dry up, and dewater and cure;
(2) photoetching: at first apply photoresist, preceding baking on Sapphire Substrate, expose under ultraviolet light then, develop, obtaining width is that 3 μ m are mutually 60 ° of interconnected ridge patterns;
(3) etching: utilize the ICP lithographic technique that the Sapphire Substrate of step (2) is carried out etching, wherein select BCl
3/ Cl
2As etching agent, three ridges that become 60 ° of angles mutually of evenly arranging on the etching back substrate, the bottom side length of boss ridge vertical cross-section is 3 μ m, and the top angle is 60 °, and the spacing between per two adjacent parallel ridge center lines is 4 μ m;
(4) remove photoresist: the sapphire graphical substrate that etching is intact is with acetone, ethanol sonicated, with a large amount of deionized water rinsings totally and dry up, obtains sapphire graphical substrate as shown in Figure 3 then.This sapphire graphical substrate can be used for preparing light-emitting diode and growing GaN base epitaxial material, the dislocation concentration phenomenon when it can be reduced in growing GaN homepitaxy material, and improve the antistatic breakdown performance of device and the light extraction efficiency of chip.
Below only be preferred application example of the present invention, protection scope of the present invention is not constituted any limitation.In fact, those skilled in the art are via the enlightenment of technical solution of the present invention, the micro nano structure that also can expect adopting the such scheme preparation to have the hexagonal structure elementary cell etc.But all employing equivalents or equivalence are replaced and the technical scheme of formation, all drop within the rights protection scope of the present invention.
Claims (3)
1. one kind is reduced the micro nano structure that GaN epitaxial growth dislocation is concentrated, it is characterized in that, the figure of described micro nano structure is made up of a plurality of closed cells of array arrangement, the polygonized structure of each closed cell for being interconnected to by micro-nano boss ridge, and each angle sum of forming in being parallel to the plane of substrate surface of each closed cell is 180 ° a integral multiple;
Described polygonized structure is triangular structure or hexagonal structure, if triangular structure, connect by planar structure between its arbitrary summit and the limit relative with this summit, and this both spacing is 0.4～15 μ m, if hexagonal structure, then connect by planar structure between its two parallel limit, and this both spacing also is 0.4～15 μ m;
The vertical cross-section of described micro-nano boss ridge is each polygonal cross-section structure that is connected by two curves between two end points of taper shape or summit and base.
2. the micro nano structure that reduction GaN epitaxial growth dislocation according to claim 1 is concentrated, it is characterized in that, the drift angle of described polygonal cross-section is 20～160 °, and base length is 0.2～8 μ m, and the vertical range between cross section top margin and the base is 0.2-3 μ m.
3. the application of micro nano structure in preparation light-emitting diode and growing GaN base epitaxial material that reduction GaN epitaxial growth dislocation as claimed in claim 1 is concentrated.
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| CN 201110040708 CN102176500B (en) | 2011-02-18 | 2011-02-18 | Micro-nano structure for reducing dislocation concentration of GaN epitaxial growth and application thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390706A (en) * | 2012-05-10 | 2013-11-13 | 新世纪光电股份有限公司 | Patterned base material with emitting angle convergent and light-emitting diode element |
| CN103474343A (en) * | 2013-09-12 | 2013-12-25 | 昆山奥德鲁自动化技术有限公司 | ITO surface micro-nano structure processing method |
| CN108269896A (en) * | 2016-12-31 | 2018-07-10 | 山东华光光电子股份有限公司 | The sapphire pattern substrate and preparation method that a kind of laser ablation dislocation hemisphere is combined with ODR |
| CN111123531A (en) * | 2019-12-29 | 2020-05-08 | 中国科学院西安光学精密机械研究所 | Antireflection micro-nano structure array based on space shaping |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101150161A (en) * | 2007-08-30 | 2008-03-26 | 鹤山丽得电子实业有限公司 | A making method for non coating film semiconductor extension slice |
| CN101345274A (en) * | 2007-07-11 | 2009-01-14 | 中国科学院半导体研究所 | Method for improving luminous efficiency of GaN based LED by using graphic underlay |
-
2011
- 2011-02-18 CN CN 201110040708 patent/CN102176500B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101345274A (en) * | 2007-07-11 | 2009-01-14 | 中国科学院半导体研究所 | Method for improving luminous efficiency of GaN based LED by using graphic underlay |
| CN101150161A (en) * | 2007-08-30 | 2008-03-26 | 鹤山丽得电子实业有限公司 | A making method for non coating film semiconductor extension slice |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390706A (en) * | 2012-05-10 | 2013-11-13 | 新世纪光电股份有限公司 | Patterned base material with emitting angle convergent and light-emitting diode element |
| CN103474343A (en) * | 2013-09-12 | 2013-12-25 | 昆山奥德鲁自动化技术有限公司 | ITO surface micro-nano structure processing method |
| CN108269896A (en) * | 2016-12-31 | 2018-07-10 | 山东华光光电子股份有限公司 | The sapphire pattern substrate and preparation method that a kind of laser ablation dislocation hemisphere is combined with ODR |
| CN111123531A (en) * | 2019-12-29 | 2020-05-08 | 中国科学院西安光学精密机械研究所 | Antireflection micro-nano structure array based on space shaping |
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| CN102176500B (en) | 2013-05-01 |
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