CN103474343A - ITO surface micro-nano structure processing method - Google Patents
ITO surface micro-nano structure processing method Download PDFInfo
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- CN103474343A CN103474343A CN2013104200642A CN201310420064A CN103474343A CN 103474343 A CN103474343 A CN 103474343A CN 2013104200642 A CN2013104200642 A CN 2013104200642A CN 201310420064 A CN201310420064 A CN 201310420064A CN 103474343 A CN103474343 A CN 103474343A
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Abstract
The invention discloses an ITO surface micro-nano structure processing method. Firstly, ITO evaporation is performed on a cleaned epitaxial wafer, then the product is conveyed to yellow light, colloid evening, exposure and developing are performed, so that a micro-nano structure on a mask is replicated to the ITO surface, next, an ITO etching liquor step-by-step etching is used for performing wet etching on ITO without protection of colloid, finally, after colloid removal, the ITO is soaked into BOE solution for vibration etching, and therefore kinds of micro-nano structures are formed on the ITO surface. The operation is easy and practicable, by the utilization of the ITO step-by-step etching and the BOE solution, a rough diffuse reflection layer of the micro-nano structures is formed on the ITO surface in an etching mode, so that the light-emitting efficiency of an LED chip is improved.
Description
Technical field
The present invention relates to field of photoelectric technology, especially a kind of processing method of ITO surface micronano structure.
Background technology
Today day by day in short supply at the energy, the LED power consumption exclusive with it is few, and high life is simple in structure, is easy to the advantages such as use, and backlight out of doors, the fields such as illumination are in an increasingly wide range of applications.The ITO(indium tin oxide) as a kind of N layer semiconductor, manufacture craft is simple, light transmission is good, sheet resistance is low, thus the good LED chip FEOL that is widely used in of the horizontal expansion of electric current, yet due to refractive index difference larger between ITO and air, so when light during from the inner outgoing of LED chip, easily the interface at ITO and air forms the angle of total reflection, has retrained the outgoing of light, thereby has affected the external quantum efficiency of LED.
Therefore, need a kind of new technical scheme to address the above problem.
Summary of the invention
Goal of the invention: the problem produced in order to solve prior art, the invention provides a kind of simple, the processing method of the simple ITO surface micronano structure of technique.
Technical scheme: for achieving the above object, the present invention can adopt following technical scheme: a kind of processing method of ITO surface micronano structure comprises the following steps:
(1) epitaxial wafer after cleaning is carried out to the ITO evaporation;
(2) epitaxial wafer that surface is coated with to ITO is delivered to gold-tinted and is carried out even glue, utilizes the proximity printing mode, and the micro nano structure on mask surface is copied to colloid surface, is finally developed;
(3) finished product after developing is carried out to the ITO wet etching, for better that above-mentioned pattern etching is clean, adopt the mode of step etching to be processed here;
(4) after wet etching, remove the colloid on ITO surface, then the said goods is delivered to the BOE cell body and carry out wet etching, its solution temperature is normal temperature, and the time is 25-40s, during etching, need shake up and down product.
Further, in described step (3), the step etching mode is: during first step etching, ITO etching liquid temperature is 45 ℃～50 ℃, and etch period is 30～45s, and during second etching, ITO etching liquid temperature is room temperature, and etch period is 30～45s.
Beneficial effect: the processing method that the invention discloses a kind of ITO surface micronano structure; At first the epitaxial wafer after cleaning is carried out to the ITO evaporation, then the said goods is delivered to gold-tinted, carry out even glue, exposure, develop, thereby the micro nano structure above mask is copied to the ITO surface, then utilize the method for ITO etching liquid step etching, the ITO that there is no the colloid protection is carried out to wet etching, after finally removing photoresist, it is soaked in BOE solution and is shaken corrosion, finally on the ITO surface, formed multiple micro nano structure; This technique has that operation is simple and feasible, utilizes ITO step etching and BOE solution to go out the coarse diffuse reflector of micro nano structure in the ITO surface corrosion, thereby increases the light extraction efficiency of LED chip.
Embodiment
Below in conjunction with embodiment, further illustrate the present invention, should understand following embodiment only is not used in and limits the scope of the invention for the present invention is described, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
Embodiment 1:
A kind of processing method of ITO surface micronano structure comprises the following steps:
(1) epitaxial wafer after cleaning is carried out to the ITO evaporation;
(2) epitaxial wafer that surface is coated with to ITO is delivered to gold-tinted and is carried out even glue, utilizes the proximity printing mode, and the micro nano structure on mask surface is copied to colloid surface, is finally developed;
(3) finished product after developing is carried out to the ITO wet etching, for better that above-mentioned pattern etching is clean, adopt the mode of step etching to be processed here; Described step etching mode is: during first step etching, ITO etching liquid temperature is 45 ℃, and etch period is 30s, and during second etching, ITO etching liquid temperature is room temperature, and etch period is 30s;
(4) after wet etching, remove the colloid on ITO surface, then the said goods is delivered to the BOE cell body and carry out wet etching, its solution temperature is normal temperature, and the time is 25s, during etching, need shake up and down product.
Embodiment 2:
A kind of processing method of ITO surface micronano structure comprises the following steps:
(1) epitaxial wafer after cleaning is carried out to the ITO evaporation;
(2) epitaxial wafer that surface is coated with to ITO is delivered to gold-tinted and is carried out even glue, utilizes the proximity printing mode, and the micro nano structure on mask surface is copied to colloid surface, is finally developed;
(3) finished product after developing is carried out to the ITO wet etching, for better that above-mentioned pattern etching is clean, adopt the mode of step etching to be processed here; Described step etching mode is: during first step etching, ITO etching liquid temperature is 50 ℃, and etch period is 45s, and during second etching, ITO etching liquid temperature is room temperature, and etch period is 45s;
(4) after wet etching, remove the colloid on ITO surface, then the said goods is delivered to the BOE cell body and carry out wet etching, its solution temperature is normal temperature, and the time is 40s, during etching, need shake up and down product.
Embodiment 3:
A kind of processing method of ITO surface micronano structure comprises the following steps:
(1) epitaxial wafer after cleaning is carried out to the ITO evaporation;
(2) epitaxial wafer that surface is coated with to ITO is delivered to gold-tinted and is carried out even glue, utilizes the proximity printing mode, and the micro nano structure on mask surface is copied to colloid surface, is finally developed;
(3) finished product after developing is carried out to the ITO wet etching, for better that above-mentioned pattern etching is clean, adopt the mode of step etching to be processed here; Described step etching mode is: during first step etching, ITO etching liquid temperature is 48 ℃, and etch period is 38s, and during second etching, ITO etching liquid temperature is room temperature, and etch period is 38s;
(4) after wet etching, remove the colloid on ITO surface, then the said goods is delivered to the BOE cell body and carry out wet etching, its solution temperature is normal temperature, and the time is 33s, during etching, need shake up and down product.
Claims (2)
1. an ITO surface micronano structure processing method is characterized in that comprising the following steps:
(1) epitaxial wafer after cleaning is carried out to the ITO evaporation;
(2) epitaxial wafer that surface is coated with to ITO is delivered to gold-tinted and is carried out even glue, utilizes the proximity printing mode, and the micro nano structure on mask surface is copied to colloid surface, is finally developed;
(3) finished product after developing is carried out to the ITO wet etching, for better that above-mentioned pattern etching is clean, adopt the mode of step etching to be processed here;
(4) after wet etching, remove the colloid on ITO surface, then the said goods is delivered to the BOE cell body and carry out wet etching, its solution temperature is normal temperature, and the time is 25-40s, during etching, need shake up and down product.
2. a kind of ITO surface micronano structure processing method according to claim 1 is characterized in that: in described step (3), the step etching mode is: during first step etching, ITO etching liquid temperature is 45 ℃～50 ℃, etch period is 30-45s, during second etching, ITO etching liquid temperature is room temperature, and etch period is 30-45s.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904183A (en) * | 2014-03-28 | 2014-07-02 | 华南理工大学 | Rough GaN base LED chip of ITO and preparation method thereof |
| CN104167240A (en) * | 2014-06-13 | 2014-11-26 | 南方科技大学 | Transparent conductive substrate, preparation method thereof and organic electroluminescent device |
| CN105789402A (en) * | 2016-05-17 | 2016-07-20 | 厦门市三安光电科技有限公司 | Flip LED chip and preparing method thereof |
| CN106783918A (en) * | 2016-12-16 | 2017-05-31 | Tcl集团股份有限公司 | A kind of pixel bank structures and preparation method |
| CN108203074A (en) * | 2016-12-19 | 2018-06-26 | 中芯国际集成电路制造(上海)有限公司 | A kind of preparation method of semiconductor devices |
| CN110600374A (en) * | 2019-07-31 | 2019-12-20 | 富芯微电子有限公司 | BOE corrosion process method |
| CN111628009A (en) * | 2019-02-28 | 2020-09-04 | 北京铂阳顶荣光伏科技有限公司 | Thin film solar cell and preparation method thereof |
| CN112820807A (en) * | 2019-11-15 | 2021-05-18 | 山东浪潮华光光电子股份有限公司 | Preparation method of LED chip with roughened surface |
| CN115241335A (en) * | 2022-08-08 | 2022-10-25 | 福建兆元光电有限公司 | ITO (indium tin oxide) corrosion method for LED (light-emitting diode) chip |
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| US20100035179A1 (en) * | 2007-03-19 | 2010-02-11 | Electronics And Telecommunications Research Instit Ute | Method of synthesizing ito electron-beam resist and method of forming ito pattern using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103904183A (en) * | 2014-03-28 | 2014-07-02 | 华南理工大学 | Rough GaN base LED chip of ITO and preparation method thereof |
| CN103904183B (en) * | 2014-03-28 | 2017-01-18 | 华南理工大学 | Rough GaN base LED chip of ITO and preparation method thereof |
| CN104167240A (en) * | 2014-06-13 | 2014-11-26 | 南方科技大学 | Transparent conductive substrate, preparation method thereof and organic electroluminescent device |
| CN105789402A (en) * | 2016-05-17 | 2016-07-20 | 厦门市三安光电科技有限公司 | Flip LED chip and preparing method thereof |
| CN105789402B (en) * | 2016-05-17 | 2019-02-19 | 厦门市三安光电科技有限公司 | The production method of flip LED chips |
| CN106783918A (en) * | 2016-12-16 | 2017-05-31 | Tcl集团股份有限公司 | A kind of pixel bank structures and preparation method |
| CN108203074A (en) * | 2016-12-19 | 2018-06-26 | 中芯国际集成电路制造(上海)有限公司 | A kind of preparation method of semiconductor devices |
| CN108203074B (en) * | 2016-12-19 | 2020-07-07 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of semiconductor device |
| CN111628009A (en) * | 2019-02-28 | 2020-09-04 | 北京铂阳顶荣光伏科技有限公司 | Thin film solar cell and preparation method thereof |
| CN110600374A (en) * | 2019-07-31 | 2019-12-20 | 富芯微电子有限公司 | BOE corrosion process method |
| CN112820807A (en) * | 2019-11-15 | 2021-05-18 | 山东浪潮华光光电子股份有限公司 | Preparation method of LED chip with roughened surface |
| CN115241335A (en) * | 2022-08-08 | 2022-10-25 | 福建兆元光电有限公司 | ITO (indium tin oxide) corrosion method for LED (light-emitting diode) chip |
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Application publication date: 20131225 |