CN103011060A - Method for preparing hemispheric micro-nano lens array - Google Patents
Method for preparing hemispheric micro-nano lens array Download PDFInfo
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- CN103011060A CN103011060A CN2012105487043A CN201210548704A CN103011060A CN 103011060 A CN103011060 A CN 103011060A CN 2012105487043 A CN2012105487043 A CN 2012105487043A CN 201210548704 A CN201210548704 A CN 201210548704A CN 103011060 A CN103011060 A CN 103011060A
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Abstract
A method for preparing a hemispheric micro-nano lens array includes the following steps: step 1, taking a transparent substrate and depositing a layer of transparent conductive film on the transparent substrate; step 2, coating a single-layered transparent micro-nano sphere on the transparent conductive film; step 3, enabling the transparent micro-nano sphere to form a slight collapse on the transparent conductive film through adopting a heat treatment method, so as to form a hemispheric micro-nano lens array; step 4, electroplating a layer of metal among clearances of the hemispheric micro-nano lens array through adopting an electroplating method, so as to fix the hemispheric micro-nano lens array on the transparent substrate with the transparent conductive film; step 5, taking a base coated with photoresist; step 6, buckling the transparent substrate fixed and provided with the transparent conductive film on the base coated with the photoresist; step 7, exposing the photoresist coated on the base to form the array figure in virtue of the condensation function of the hemispheric micro-nano lens array and under the illumination with fixed wavelength; and step 8, performing development, transferring the array figure on the photoresist, and completing the preparation.
Description
Technical field
The present invention relates to a kind of semiconductor micro-nano manufacturing method, refer to especially a kind of method for preparing the hemispherical micro-nano lens array.
Background technology
Along with the development of semiconductor industry, characteristic size is dwindled day by day, and traditional photoetching faces increasing challenge, no longer is fit to the nano level photoetching of preparation.Adopt the electron beam exposure meeting so that cost is large, and be not easy to the large tracts of land suitability for industrialized production, if also face with nano impression expensive, and the jejune problem of technology.Here obtained cleverly a kind of hemispherical micro-nano lens array etching system, micro-nano array pattern can be transferred in the needed substrate, at aspects such as preparation plasma, photonic crystal, graph substrate good application prospect is arranged, and cost is low, production efficiency is high, and does not need larger repacking is done by the conventional lithography system.
Summary of the invention
The object of the invention is to, a kind of method for preparing the hemispherical micro-nano lens array is provided, it can be transferred to micro-nano array pattern in the needed substrate, at aspects such as preparation plasma, photonic crystal, graph substrate good application prospect is arranged, and cost is low, production efficiency is high, and does not need larger repacking is done by the conventional lithography system.
The present invention proposes a kind of method for preparing the hemispherical micro-nano lens array, may further comprise the steps:
Step 1: get a transparent substrates, deposit layer of transparent conducting film on transparent substrates;
Step 2: be coated with a single-layer and transparent micro-nano ball at nesa coating;
Step 3: adopt heat-treating methods, so that transparent micro-nano ball has subsiding a little at nesa coating, become the hemispherical micro-nano lens array;
Step 4: use electric plating method between the gap of hemispherical micro-nano lens array, to electroplate the last layer metal, thereby the hemispherical micro-nano lens array is fixed on the transparent substrates with nesa coating;
Step 5: get a substrate that is coated with photoresist;
Step 6: the transparent substrates that will be fixed with nesa coating buckles in the substrate that is coated with photoresist;
Step 7: under the illumination of predetermined wavelength, utilize the optically focused effect of hemispherical micro-nano lens array, will be coated in suprabasil photoresist exposure, form array pattern;
Step 8: develop, array pattern is transferred on the photoresist, finish preparation.
Description of drawings
For making the auditor can further understand structure of the present invention, feature and purpose thereof, below in conjunction with being described in detail as follows of accompanying drawing and preferred embodiment, wherein:
Fig. 1 is preparation flow figure of the present invention;
Fig. 2-Fig. 6 is structure flow chart of the present invention, shows respectively the configuration state of each step.
The specific embodiment
See also Fig. 1 to Fig. 6, the invention provides a kind of method for preparing the hemispherical micro-nano lens array, may further comprise the steps:
Step 1: get a transparent substrates 10, deposit layer of transparent conducting film 11 on transparent substrates 10; Described transparent substrates 10 can be other organic-inorganic transparent substrates such as glass, sapphire, quartz, plastics.Nesa coating 11 is other organic and inorganic transparent conductive films such as ITO, AZO, GZO, Graphene, and THICKNESS CONTROL is at 5-50nm; Transparent micro-nano ball 12 can be the transparent micro-nano balls of other organic-inorganics (consulting Fig. 2) such as PS ball or SiO2 ball;
Step 2: be coated with a single-layer and transparent micro-nano ball 12 at nesa coating 11, it is characterized in that, heat treatment temperature is at 80-120 degree 1-10 minute (consulting Fig. 2);
Step 3: adopt heat-treating methods, so that transparent micro-nano ball 12 has subsiding a little at nesa coating 11, become hemispherical micro-nano lens array 21 (consulting Fig. 3);
Step 4: use electric plating method between the gap of hemispherical micro-nano lens array 21, to electroplate last layer metal 31, thereby hemispherical micro-nano lens array 21 is fixed on the transparent substrates 10 with nesa coating 11, it is characterized in that, plated metal can be other metals such as Cu, Ni, Ag, and THICKNESS CONTROL is in the radius size (consulting Fig. 4) of transparent micro-nano ball 12;
Step 5: get a substrate 41 that is coated with photoresist 42, the photoresist 42 here can be positive glue, negative glue (consulting Fig. 5);
Step 6: the transparent substrates 10 that will be fixed with nesa coating 11 buckles in the substrate 41 that is coated with photoresist 42 (consulting Fig. 5);
Step 7: the illumination of predetermined wavelength 43 times, utilize the optically focused effect of hemispherical micro-nano lens array 21, with photoresist 42 exposures that are coated in the substrate 41, form array pattern, it is characterized in that, illumination 43 wavelength can be any monochromatic light from infrared to ultraviolet, and substrate 41 is to do arbitrarily semiconductor devices or other (the consulting Fig. 5) that micro-nano figure shifts;
Step 8: develop, array pattern is transferred on the photoresist 42, the array pattern here can be by canted exposure, perhaps allows hemispherical micro-nano lens array 21 and micro-displacement is arranged with the substrate 41 of photoresist, thereby produces more pattern.Perhaps formerly modulating first of illumination 43 blocked, thereby go out to serve the combination pattern of wanting, finish preparation (consulting Fig. 6).
The above; only be embodiments of the invention; be not that the present invention is done any pro forma restriction; every any simple modification, equivalent variations and modification of above embodiment being done according to the technology of the present invention essence; all still belong within the technical solution of the present invention scope, so protection scope of the present invention is when being as the criterion with claims.
Claims (8)
1. method for preparing the hemispherical micro-nano lens array may further comprise the steps:
Step 1: get a transparent substrates, deposit layer of transparent conducting film on transparent substrates;
Step 2: be coated with a single-layer and transparent micro-nano ball at nesa coating;
Step 3: adopt heat-treating methods, so that transparent micro-nano ball has subsiding a little at nesa coating, become the hemispherical micro-nano lens array;
Step 4: use electric plating method between the gap of hemispherical micro-nano lens array, to electroplate the last layer metal, thereby the hemispherical micro-nano lens array is fixed on the transparent substrates with nesa coating;
Step 5: get a substrate that is coated with photoresist;
Step 6: the transparent substrates that will be fixed with nesa coating buckles in the substrate that is coated with photoresist;
Step 7: under the illumination of predetermined wavelength, utilize the optically focused effect of hemispherical micro-nano lens array, will be coated in suprabasil photoresist exposure, form array pattern;
Step 8: develop, array pattern is transferred on the photoresist, finish preparation.
2. the method for preparing the hemispherical micro-nano lens array according to claim 1, wherein the material of transparent substrates is glass, sapphire, quartz or plastics in the step 1.
3. the method for preparing the hemispherical micro-nano lens array according to claim 1, wherein the material of nesa coating is ITO, AZO, GZO or Graphene, its thickness is 5-50nm.
4. the method for preparing the hemispherical micro-nano lens array according to claim 1, wherein the material of transparent micro-nano ball is PS ball or SiO
2Ball.
5. the method for preparing the hemispherical micro-nano lens array according to claim 1, wherein heat treated temperature is the 80-120 degree, the time is 1-10 minute.
6. the method for preparing the hemispherical micro-nano lens array according to claim 1, wherein the material of metal is Cu, Ni or Ag, thickness is identical with the radius of transparent micro-nano ball.
7. the method for preparing the hemispherical micro-nano lens array according to claim 1, wherein the wavelength of illumination is any monochromatic wavelength from infrared to ultraviolet.
8. the method for preparing the hemispherical micro-nano lens array according to claim 1, wherein array pattern is by canted exposure or is just exposing, perhaps with the hemispherical micro-nano lens array with carry out displacement with the substrate of photoresist, thereby produce more figure, perhaps illumination is modulated first and block, thereby form predetermined composite figure.
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| CN2012105487043A CN103011060A (en) | 2012-12-17 | 2012-12-17 | Method for preparing hemispheric micro-nano lens array |
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| CN2012105487043A CN103011060A (en) | 2012-12-17 | 2012-12-17 | Method for preparing hemispheric micro-nano lens array |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103311097A (en) * | 2013-05-24 | 2013-09-18 | 中国科学院半导体研究所 | Method for manufacturing micro-nano graph on sapphire substrate |
| CN103345009A (en) * | 2013-07-08 | 2013-10-09 | 西北工业大学 | Mass preparation method of surface plasma lens |
| CN104503007A (en) * | 2014-12-12 | 2015-04-08 | 成都纳光科技有限公司 | Manufacturing method of micro-lens array |
| CN109061711A (en) * | 2018-08-14 | 2018-12-21 | 同济大学 | Directional transmissions scintillation component with surface micro-structure array and preparation method thereof |
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| CN101498631A (en) * | 2009-03-06 | 2009-08-05 | 中国科学院力学研究所 | Production method for surface moire optical grating of tensile specimen |
| JP4888011B2 (en) * | 2006-09-28 | 2012-02-29 | 凸版印刷株式会社 | Needle-like body and manufacturing method thereof |
| CN102701143A (en) * | 2012-06-14 | 2012-10-03 | 吴奎 | Lithography process with micro-nano lens for auxiliary light condensation for preparing ordered micro-nano structure |
| CN102759763A (en) * | 2012-06-21 | 2012-10-31 | 西安交通大学 | Micronano manufacturing method of compound eye structure micro lens array |
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Patent Citations (6)
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| KR20000004413A (en) * | 1998-06-30 | 2000-01-25 | 김영환 | Method for forming resist patterns |
| US6272101B1 (en) * | 1998-12-15 | 2001-08-07 | Sony Corporation | Method and device for instantly encoding digitized information on a stamper from which compact discs can be made |
| JP4888011B2 (en) * | 2006-09-28 | 2012-02-29 | 凸版印刷株式会社 | Needle-like body and manufacturing method thereof |
| CN101498631A (en) * | 2009-03-06 | 2009-08-05 | 中国科学院力学研究所 | Production method for surface moire optical grating of tensile specimen |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103311097A (en) * | 2013-05-24 | 2013-09-18 | 中国科学院半导体研究所 | Method for manufacturing micro-nano graph on sapphire substrate |
| CN103345009A (en) * | 2013-07-08 | 2013-10-09 | 西北工业大学 | Mass preparation method of surface plasma lens |
| CN103345009B (en) * | 2013-07-08 | 2015-04-22 | 西北工业大学 | Mass preparation method of surface plasma lens |
| CN104503007A (en) * | 2014-12-12 | 2015-04-08 | 成都纳光科技有限公司 | Manufacturing method of micro-lens array |
| CN109061711A (en) * | 2018-08-14 | 2018-12-21 | 同济大学 | Directional transmissions scintillation component with surface micro-structure array and preparation method thereof |
| CN109061711B (en) * | 2018-08-14 | 2022-08-16 | 同济大学 | Directional emission scintillator device with surface microstructure array and preparation method thereof |
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Application publication date: 20130403 |