CN102701143A - Lithography process with micro-nano lens for auxiliary light condensation for preparing ordered micro-nano structure - Google Patents
Lithography process with micro-nano lens for auxiliary light condensation for preparing ordered micro-nano structure Download PDFInfo
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Abstract
The invention relates to a lithography process with a micro-nano lens for auxiliary light condensation. The process can realize the preparation of an ordered micro-nano structure. The micro-nano lens covers a substrate and is used as a light condensing mask, and photoresist is exposed by using a light condensing effect of ordered micro-nano hemispheres on the micro-nano lens. The process overcomes the defects that the industrialization is difficult to realize, the process efficiency is low, the quality is non-controllable and the like because micro-nano spheres are required to be repetitively assembled when a nanosphere lithography process is adopted. The process is highly controllable during pattern transfer, patterns are highly accurate and ordered, the patterns are various, the operation is simple to conduct, the cost is low and the industrialized production is facilitated. The process has a very good prospect of application to the preparation of nano pattern substrates, quantum dots, plasmas, mesh electrodes, photonic crystals, micro-nano devices and the like. The process can be widely used for manufacturing micro-nano structures of semiconductor photoelectronic devices such as LEDs (light-emitting diodes), LDs (laser discs), HEMTs (high electron mobility transistors), quantum dot memories, solar cells, fuel cell bipolar plates and micro-fluidic devices.
Description
Technical field
The invention belongs to semiconductor micro-nano processing technique field, the auxiliary optically focused photoetching process of micro-nano lens film prepares orderly micro nano structure, accomplishes orderly micro-nano graph and shifts.
Background technology
Conventional lithography process has bottleneck on lithographic nano rank figure, and adopts electron beam exposure can make that cost is big, and is not easy to the large tracts of land suitability for industrialized production.Advantages such as and the micro-nano ball photoetching that grows up at present (Nanosphere Lithography) is with low cost owing to it, and micro-nano-scale control is accurate receive extensive attention.But its application receives like limit: 1, pattern is single; 2, sphere gap adjustment difficulty; 3, large tracts of land industrialization preparation difficulty; 4, technical process repeats to assemble micro-nano ball and makes that preparation efficiency is low and cause quality uncontrollable.
This patent has been invented the auxiliary optically focused photoetching process of a kind of micro-nano lens.Technology mainly relies on large area micro-nano rice lens as the optically focused mask photoresist to be realized other exposure of micro/nano level.Use the orderly micro nano structure of this prepared, on figure shifts controllability height, figure high-sequential, can obtain more graphic pattern, simple to operate and be convenient to industrialization production.Such as preparing sapphire, silicon, nanometer silicon carbide graph substrate, quantum dot, surface plasma, photonic crystal, mesh electrodes etc.; Be widely used in LED; LD; HEMT, the manufacture process of semiconductor photoelectronic device micro nano structures such as solar cell, fuel battery double plates, micro-fluidic device.
Summary of the invention
The present invention prepares orderly micro nano structure with the auxiliary optically focused photoetching process of micro-nano lens, in semiconductor technology, realize the preparation of micro nano structure figure, and figure shifts.May further comprise the steps:
Step 1) is coated with one deck photoresist 11 in a substrate 10;
Step 2) on photoresist 11, places a micro-nano lens 12;
Step 3) is with illumination 13 exposures;
After developing, step 4) forms the nanometer mesh on photoresist 11 surfaces;
Step 5) is transferred to substrate 10 through wet method or dry method with figure;
Description of drawings
For making the auditor can further understand structure of the present invention, characteristic and purpose thereof, below in conjunction with the detailed description of accompanying drawing and preferred embodiment as after, wherein:
Fig. 1 prepares orderly micro nano structure for the auxiliary optically focused photoetching process of micro-nano lens of the present invention; Wherein 10 are substrate, and 11 is photoresist, and 12 is micro-nano lens;
Fig. 2 for the present invention at preparation method's one sketch map that is micro-nano lens, 20 is substrate, 21 individual layer micro-nano balls;
Fig. 3 is preparation method's two sketch mapes of the micro-nano lens of the present invention, and 20 is substrate, and 21 is the individual layer micro-nano ball, and 30 is glue;
Fig. 4 is the sketch map of preparation sapphire nano graph substrate among the present invention for example, and 10 is Sapphire Substrate, and 11 is photoresist, and 12 is micro-nano lens, and 13 are illumination;
Fig. 5 is the sketch map of preparation plasma among the present invention for example, and 10 is device, and 11 is photoresist, and 12 is micro-nano lens, and 13 are illumination, and 14 is the metal quantum point;
Fig. 6 is the sketch map of preparation quantum dot among the present invention for example, and 10 is substrate, and 11 is insulating barrier, and 12 is photoresist, and 13 is micro-nano lens, and 14 are illumination, and 15 is semiconductor-quantum-point;
Fig. 7 is the sketch map of preparation photonic crystal among the present invention for example, and 10 is substrate, and 11 is dielectric layer, and 12 is photoresist, and 13 is micro-nano lens, and 14 are illumination, and 15 is semiconductor nano-pillar;
Fig. 8 is the sketch map of preparation mesh electrodes among the present invention for example, and 10 is device, and 11 are negative photoresist, and 12 is micro-nano lens, and 13 are illumination, and 14 is metal;
Fig. 9 is the sketch map of micro-nano array device among the present invention for example, and 10 is substrate, and 11 is insulating barrier, and 12 is photoresist, and 13 is micro-nano lens, and 14 are illumination, and 15 is the semiconductor nano-pillar device;
The specific embodiment
The auxiliary optically focused photoetching process of micro-nano lens prepares orderly micro nano structure, may further comprise the steps:
Step 1): be shown in like Fig. 1 (a) and be coated with one deck photoresist 11 in the substrate 10; Substrate 10 can be III/V families such as quartz, glass, sapphire, element, semiconductors such as silicon, germanium, carborundum, GaAs, gallium nitride, carborundum, indium phosphide, II/VI family binary, ternary or quaternary semiconductor material; Oxide semiconductor material such as zinc oxide, titanium oxide; Can be that individual layer also can be a multilayer material; Can also be the whole or a part of of semiconductor photoelectric devices such as OLED, LED, LD, solar cell, fuel battery double plates; Have the device surface as conducting membrane material such as Graphene, CNT, ITO, GZO, AZO.Photoresist 11 is to the positive glue of 200nm-800nm sensitization or negative glue.
Step 2) as on Fig. 1 (a) institute photoresist that is shown in 11, places a micro-nano lens 12; The preparation technology of micro-nano lens 12 enumerates following two kinds of methods at present:
Method one: get a substrate 20 like Fig. 2, cover an individual layer micro-nano ball 21 in the above, form hemisphere or convex surface ball through high annealing, and with the base combine firmly, constitute a whole mobile lens sheet.Substrate 20, its material are organic and inorganic materials such as two polishing sapphires, quartz plate, silicon chip, sheet glass, plastics, resin, silica gel, as long as to the basic transparent dielectric material fully of exposure wave band.Individual layer micro-nano ball 51 can be that polystyrene spheres, silica spheres, PDMS ball, alumina balls, cesium chloride ball etc. can be through the single-layer and transparent balls of self-assembling technique arrangement, and diameter is 0.1-1um.
Method two: get a substrate 20 like Fig. 3, cover an individual layer micro-nano ball 21 in the above, fill glue 30, constitute a micro-nano lens of integral body at gap location.Filling glue 30 is PDMS, PDMA, and silica gel, titanium oxide gel, other organic and inorganic colloid such as common photoresist, requiring must be close or equal with the refractive index of individual layer micro-nano ball 21.After filling like this, be equivalent to the individual layer micro-nano ball and become the micro-nano hemisphere of individual layer, constitute micro-nano lens.Also can fill dielectric materials such as silica, silicon nitride with the method for sputter is fixed on individual layer micro-nano ball 21 on the substrate 20.
Brief account individual layer micro-nano ball (particle diameter 50nm-3000nm) membrane preparation method
The preparation colloid micro ball that two-dimensional colloidal crystal adopted mainly is macromolecule and inorganic colloid microballoon, like polystyrene microsphere (PS) and silica (SiO
2) microballoon, the particle diameter of these colloid micro balls is at 50nm 3000nm.In the test, select corresponding microspherulite diameter for use according to required micro-nano graphic feature yardstick.Prepare at present the common method that adopts of two-dimensional colloidal crystal and the LB film method is arranged, the colloid monolayer crystal film that self assembly or spin-coating method (spin-coating) composition rule is arranged.Self-assembly method: this instance utilizes surface tension of liquid, forms individual layer micro-nano ball film through microballoon in water surface self assembly.Implementation process is following: colloid micro ball disperses in the diffusant mixed liquor in water, and is ultrasonic evenly subsequent use.This solution is labeled as A.In a tank, fill pure water, use A is slowly dripped at water surface, because capillary effect, microballoon can be self-assembled into individual layer micro-nano ball film and float over the surface of water on the surface.With slowly mentioning in the substrate insertion water that scribbles photoresist, individual layer micro-nano ball film just can be transferred to the photoresist surface like this.
Spin-coating method: utilize spin coating equipment, drip microballoon water (organic solvent) solution,, form individual layer micro-nano ball film at substrate surface through turning effort at substrate surface.Colloid micro ball disperses in water (organic solvent), and is ultrasonic evenly subsequent use.This solution is labeled as B.The substrate that scribbles photoresists is positioned in the spin coating equipment prepares to film.Drip B on photoresists surfaces and cause and be paved with the surface fully, leave standstill 10-1000s, regulate the rotation program, rotating speed is controlled at 100-30000r/min, and the time is 5-1000s.Obtain individual layer micro-nano ball film on the photoresist surface.
Step 3) such as Fig. 1 (a) are with illumination 13 exposures; Optical wavelength can adopt from the light source of 200-1000nm.Can consider the arbitrarily angled exposure again of incident direction inclination 0 to 90 degree with illumination 13; Same also can fix illumination 13 directions, and substrate 10 is arbitrarily angled together with micro-nano lens 12 0 to 90 degree that tilts.So simultaneously, can consider under the situation at a fixing angle of inclination, after the single exposure, substrate rotated the arbitrarily angled exposure again of 0-360 degree, so repeatedly, can obtain more graphic pattern.Certainly after single exposure, let micro-nano lens 12 and photoresist 11 in the substrate 10 produce a micro-displacement, also can obtain more pattern.Micro-nano lens 12 can be recycled, and is convenient to industrialized standardization, indifference production.
After developing, step 4) such as Fig. 1 (b) form the nanometer mesh on photoresist 11 surfaces; If photoresist 11 is positive glue, what then form after the photoetching is photoresist 11 micro-nano mesh arrays; If negative glue, what then form after the photoetching is photoresist 11 micro-nano post arrays.Developer solution is positive glue commonly used and developer for negative photoresist.Will carry out preceding baking before the exposure, temperature is the 80-200 degree, 0.5-10 minute.After the exposure 1-30Sec, be put into 1-30Sec in the developer solution, be put into then in the water or alcohol in photographic fixing.Can also can be that the mode that sprays is developed with the mode of soaking.
Step 5) such as Fig. 1 (c) transfer to substrate 10 through wet method or dry method with figure; Remove photoresist after the cleaning, in substrate 10, form micro-nano figure, shown in Fig. 1 (d).
Applicating example
Through specific embodiment, further specify and set forth technical characterstic of the present invention and marked improvement below, the present invention utilizes the microballoon photosensitization, and optically focused part photoresists are carried out sensitization, thereby realizes the transfer of micro-nano figure.
Example one, the present invention provide the preparation method of the poroid graph substrate of a kind of sapphire nanometer, may further comprise the steps:
1, gets a Sapphire Substrate 10 like Fig. 4 (a); Form substrate
2, on substrate, being coated with one deck photoresist 11, can be positive glue or negative glue, and photoresist can be the photoresist to 200nm-800nm sensitization.Whirl coating speed is at 2000-8000 rpm.Dried by the fire 1-30 minute before the 90-120 degree then, like Fig. 4 (a);
3, by micro-nano lens 12, under illumination 13 irradiations, photoresist 11 is made public, by the optically focused effect of microballoon, the photoresist sensitization of optically focused part is like Fig. 4 (a);
4, development 1-30 second, figure is transferred on the photoresist 11, like Fig. 4 (b);
5, substrate is carried out dry etching, like Fig. 4 (c);
6, remove residual photoresist, on Sapphire Substrate 10, obtain and colloid micro ball cycle graph similarly, like Fig. 4 (d).The substrate here is substrates such as Si or SiC also.
In order to increase the figure degree of depth, can consider on Sapphire Substrate 10, to deposit earlier earlier one deck SiO
2Perhaps SiN, and then resist coating 11, the first etching SiO in exposure back
2Perhaps SiN, and then etching Sapphire Substrate 11 can increase the figure regularity and the degree of depth like this.Also can consider deposition one deck SiO in like the mesh of the photoresist 11 of Fig. 4 (b)
2Perhaps SiN after photoresist removed, forms SiO
2Perhaps the micro-nano post of SiN is transferred to figure on the Sapphire Substrate 10 with dry etching then.
Example two, the present invention provide a kind of surface metal plasma preparation method, may further comprise the steps:
1. getting a device 10 like Fig. 5 (a), can be other photoelectric devices such as lower MQW of internal quantum efficiencies such as LED, LD, detector, solar cell or PN joint.
2. on device 10, be coated with one deck photoresist 11, photoresist can be the photoresist to 300nm-500nm sensitization.Whirl coating speed is at 2000-8000 rpm.Dried by the fire 1-30 minute before the 90-120 degree then, like Fig. 5 (a);
3. by micro-nano lens 12, under illumination 13 irradiations, photoresist 11 is made public, by the optically focused effect of microballoon, the photoresist sensitization of optically focused part is like Fig. 5 (a);
4. development 1-30 second, the microballoon spread geometry is transferred on the photoresist, and the formation nanometer mesh of photoresist 11 is like Fig. 5 (b);
5. evaporation metal 5-100nm in the nanometer mesh of photoresist 11 is like Fig. 5 (c).Removing photoresist 11, form metal quantum point 14, like Fig. 5 (d), can be metals such as gold, silver, aluminium;
6. can consider that at high annealing metal quantum point 14 at high temperature forms littler metal quantum point 14, like Fig. 5 (e).Let metallic plasma and MQW form field coupled, increase the internal quantum efficiency of device.
Example three the present invention provide a kind of quantum dot device preparation method, may further comprise the steps
1. get a substrate 10 like Fig. 6 (a); Can be that quantum dot infrared photoelectric detector, quantum dot are the device portions that photon, field of electronic devices such as the super radiation light emitting tube, laser instrument, fiber waveguide, single-electron memory, elemental charge coupled apparatus, solar cell, quantum dot memory of active area need the deposited semiconductor quantum dot; One element, semiconductor such as silicon, germanium; III/V families such as carborundum, GaAs, gallium nitride, carborundum, indium phosphide, II/VI family binary, ternary or quaternary semiconductor material;
On substrate 10 growth 0.1-1um SiO
2Perhaps insulating barrier 11 such as SiN is like Fig. 6 (a);
3. on insulating barrier 11, be coated with one deck photoresist 12, photoresist can be the photoresist to 200nm-1000nm sensitization.Whirl coating speed is at 2000-8000 rpm.Dried by the fire 1-30 minute before the 90-120 degree then, like Fig. 6 (a);
4. by micro-nano lens 13, under illumination 14 irradiations, photoresist 12 is made public, by the optically focused effect of microballoon, the photoresist sensitization of optically focused part is like Fig. 6 (a);
5. development 1-30 second, the microballoon spread geometry is transferred on the photoresist, forms the nanometer mesh at photoresist 12, like Fig. 6 (b);
6. dry method or wet etching form the nanometer mesh on insulating barrier 11, like Fig. 6 (c);
Growing semiconductor material in insulating barrier 11 nanometer mesh; Its material system can be III/V such as any one among InP CdTe GaAs GaN, AlN, InN, AlGaN, InGaN, InAlN or the AlGaInN; II/VI family binary, ternary and quaternary semiconductor alloy also comprise element, semiconductors such as silicon, germanium; Its structure can be MQW, heterogeneous joint, homogeneity joint device.The growing method that adopts during said epitaxial growth be among metal-organic chemical vapor deposition equipment MOCVD, hydride gas-phase epitaxy HVPE or the molecular beam epitaxy MBE any one, or any two or three combination is like Fig. 6 (d);
7. remove insulating barrier 11 and form semiconductor-quantum-point 15, like Fig. 6 (e);
Example four, photonic crystal, the present invention provides a kind of preparation method of photonic crystal, in photoelectric device and device are integrated, fiber waveguide is modulated.Comprise following steps:
1. get a substrate 10; Can be that needs such as semiconductor devices or semiconductor integrated device are used the place that photonic crystal is realized fiber waveguide modulation, filtering; Its material system can be III/V such as any one among InP CdTe GaAs GaN, AlN, InN, AlGaN, InGaN, InAlN or the AlGaInN; II/VI family binary, ternary and quaternary semiconductor alloy also comprise element, semiconductors such as silicon, germanium; Its structure can be MQW, heterogeneous joint, homogeneity joint device.The growing method that adopts during said epitaxial growth be among metal-organic chemical vapor deposition equipment MOCVD, hydride gas-phase epitaxy HVPE or the molecular beam epitaxy MBE any one, or any two or three combination is like Fig. 7 (a);
On substrate 10 growth 0.1-lum SiO
2Perhaps dielectric layer 11 such as SiN is like Fig. 7 (a);
3. on dielectric layer 11, be coated with one deck photoresist 12, photoresist can be the photoresist to 300nm-500nm sensitization.Whirl coating speed is at 2000-8000 rpm.Dried by the fire 1-30 minute before the 90-120 degree then, like Fig. 7 (a);
4. by micro-nano lens 13, under illumination 14 irradiations, photoresist 12 is made public, by the optically focused effect of microballoon, the photoresist sensitization of optically focused part is like Fig. 7 (a);
5. development 1-30 second, the microballoon spread geometry is transferred on the photoresist, on photoresist 12, forms micro-nano mesh, like Fig. 7 (b);
6. dry method or wet etching form the nanometer mesh on dielectric layer 11, like Fig. 7 (c);
7. growing semiconductor nano-pillar 15 in dielectric layer 11 nanometer mesh; Its material system can be III/V such as any one among InP CdTe GaAs GaN, AlN, InN, AlGaN, InGaN, InAlN or the AlGaInN; II/VI family binary, ternary and quaternary semiconductor alloy also comprise element, semiconductors such as silicon, germanium; Its structure can be MQW, heterogeneous joint, homogeneity joint device.The growing method that adopts during said epitaxial growth be among metal-organic chemical vapor deposition equipment MOCVD, hydride gas-phase epitaxy HVPE or the molecular beam epitaxy MBE any one, or any two or three combination forms photon crystal device, like Fig. 7 (d);
8. can consider to remove the photonic crystal of dielectric layer 11 semiconductor nano-pillars 15 and air formation, like Fig. 7 (e);
Example five, the present invention provide a kind of nanometer mesh electrodes preparation method, can solve semiconductor devices current expansion problem, have strengthened device light absorption and emission characteristics again simultaneously, may further comprise the steps:
1. get a device 10 like Fig. 8 (a), can be to be that LED, LD, detector, solar cell etc. are considered current expansion, and not sacrifice the device of too many effective area; Its material system can be III/V such as any one among InP, CdTe, GaAs GaN, AlN, InN, AlGaN, InGaN, InAlN or the AlGaInN, and II/VI family binary, ternary and quaternary semiconductor alloy also comprise element, semiconductors such as silicon, germanium; The growing method that adopts during said epitaxial growth be among metal-organic chemical vapor deposition equipment MOCVD, hydride gas-phase epitaxy HVPE or the molecular beam epitaxy MBE any one, or any two or three combination; Can be grown on the self-supporting substrate, also can be to be grown on the substrates such as sapphire, silicon, carborundum;
2. on device, being coated with the negative photoresist 11 of one deck, can be the negative photoresist to 300nm-500nm sensitization.Whirl coating speed is at 2000-8000 rpm.Dried by the fire 1-30 minute before the 90-120 degree then, like Fig. 8 (a);
3. by micro-nano lens 12, under illumination 13 irradiations, photoresist 11 is made public, by the optically focused effect of microballoon, the photoresist sensitization of optically focused part is like Fig. 8 (a);
4. development 1-30 second, the microballoon spread geometry is transferred on the photoresist, and negative photoresist 11 forms micro-nano post, like Fig. 8 (d);
5. growing metal 14 and then; Can be single layer of metal or multilayer different metal; Be selected from a kind of material that comprises in nickel (Ni)/gold (Au), nickel (Ni)/silver (Ag)/gold (Au), nickel (Ni)/silver (Ag)/nickel (Ni)/gold (Au), nickel (Ni)/silver (Ag)/platinum (Pt)/gold (Au), titanium (Ti)/gold (Au), titanium (Ti)/silver (Ag)/gold (Au), titanium (Ti)/aluminium (Al)/titanium (Ti)/gold (Au), titanium (Ti)/silver (Ag)/titanium (Ti)/gold (Au), aluminium (Al)/titanium (Ti)/gold (Au), chromium (Cr)/platinum (Pt)/gold (Au), chromium (Cr)/silver (the Ag)/gold metal material groups such as (Au), like Fig. 8 (c);
6. remove negative photoresist 11, and annealing in process, metal 11 forms the nanometer mesh electrodes at device surface, like Fig. 8 (d);
Example six, utilize the present invention to prepare micro-nano post array device, utilize quantum effect to improve device efficiency, may further comprise the steps:
1. get a substrate 10; Its material system can be III/V such as any one among InP, CdTe, GaAs GaN, AlN, InN, AlGaN, InGaN, InAlN or the AlGaInN; II/VI family binary, ternary and quaternary semiconductor alloy also comprise element, semiconductors such as silicon, germanium; The growing method that adopts during said epitaxial growth be among metal-organic chemical vapor deposition equipment MOCVD, hydride gas-phase epitaxy HVPE or the molecular beam epitaxy MBE any one, or any two or three combination; Can be grown on the self-supporting substrate, also can be to be grown on the substrates such as sapphire, silicon, carborundum, like Fig. 9 (a);
On substrate the growth 0.1-1um SiO
2Perhaps other insulating barrier 11 such as SiN is like Fig. 9 (a).
3. on insulating barrier 11, be coated with one deck photoresist 12, photoresist can be the photoresist to 300nm-500nm sensitization.Whirl coating speed is at 2000-8000 rpm.Dried by the fire 1-30 minute before the 90-120 degree then, like Fig. 9 (a);
4. by micro-nano lens 13, under illumination 14 irradiations, photoresist 12 is made public, by the optically focused effect of microballoon, the photoresist sensitization of optically focused part is like Fig. 9 (a);
5. development 1-30 second, the microballoon spread geometry is transferred on the photoresist 12, on photoresist 12, forms the nanometer mesh, like Fig. 9 (b);
6. dry method or wet etching are formed on and form the nanometer mesh on the insulating barrier 11, like Fig. 9 (c);
7. growing semiconductor nano-pillar device 15 in insulating barrier nanometer mesh.Its material system can be III/V such as any one among InP CdTe GaAs GaN, AlN, InN, AlGaN, InGaN, InAlN or the AlGaInN, and II/VI family binary, ternary and quaternary semiconductor alloy also comprise element, semiconductors such as silicon, germanium; Its structure can be MQW, heterogeneous joint, homogeneity joint device.The growing method that adopts during said epitaxial growth be among metal-organic chemical vapor deposition equipment MOCVD, hydride gas-phase epitaxy HVPE or the molecular beam epitaxy MBE any one, or any two or three combination is like Fig. 9 (d);
8. also can consider to remove insulating barrier 1 and form semiconductor microactuator nano column array device, like Fig. 9 (e); The above; Be merely the specific embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with this technological people in the technical scope that the present invention disclosed; The conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (9)
1. the auxiliary optically focused photoetching process of micro-nano lens prepares orderly micro nano structure, may further comprise the steps:
Step 1) is coated with one deck photoresist 11 in a substrate 10;
Step 2) on photoresist 11, places a micro-nano lens 12;
Step 3) is with illumination 13 exposures;
After developing, step 4) forms the nanometer mesh on photoresist 11 surfaces;
Step 5) is transferred to substrate 10 through wet method or dry method with figure.
2. the auxiliary optically focused photoetching process of micro-nano lens according to claim 1 prepares orderly micro nano structure; It is characterized in that; Substrate 10 in the step 1 can be quartz, glass, sapphire; One element, semiconductor such as silicon, germanium, III/V families such as carborundum, GaAs, gallium nitride, carborundum, indium phosphide, II/VI family binary, ternary or quaternary semiconductor material; Oxide semiconductor material such as zinc oxide, titanium oxide; Can be that individual layer also can be a multilayer material; Can also be the whole or a part of of semiconductor photoelectric devices such as OLED, LED, LD, solar cell, fuel battery double plates; Have the device surface as conducting membrane material such as Graphene, CNT, ITO, GZO, AZO.
3. the auxiliary optically focused photoetching process of micro-nano lens according to claim 1 prepares orderly micro nano structure, it is characterized in that, photoresist 11 is positive glue or the negative glue to 200nm-800nm sensitization in the step 2.
4. the auxiliary optically focused photoetching process of micro-nano lens according to claim 1 prepares orderly micro nano structure, it is characterized in that the preparation technology of micro-nano lens 12 in the step 2 enumerates following two kinds of methods at present:
Method one: get a substrate 50, cover an individual layer micro-nano ball 51 in the above, form hemisphere or convex surface ball through high annealing, and with the base combine firmly, constitute a whole mobile lens sheet;
Method two: get a substrate 50, cover an individual layer micro-nano ball 51 in the above, fill glue 60, constitute a micro-nano lens of integral body at gap location.
5. the auxiliary optically focused photoetching process of micro-nano lens according to claim 4 prepares orderly micro nano structure; It is characterized in that; Removable micro-nano lens prepares substrate 50 in the exemplary method one; Its material is organic and inorganic materials such as two polishing sapphires, quartz plate, silicon chip, sheet glass, plastics, resin, silica gel, as long as to the basic transparent dielectric material fully of exposure wave band; Individual layer micro-nano ball 51 can be that polystyrene spheres, silica spheres, PDMS ball, alumina balls, cesium chloride ball etc. can be through the single-layer and transparent balls of self-assembling technique arrangement, and diameter is 0.1-1um.
6. the auxiliary optically focused photoetching process of micro-nano lens according to claim 4 prepares orderly micro nano structure, it is characterized in that, in the removable micro-nano lens 12 preparation exemplary method two; Filling glue 60 is PDMS, PDMA, silica gel; Titanium oxide gel; Other organic and inorganic colloid such as common photoresist, requiring must be close or equal with the refractive index of individual layer micro-nano ball 51, after filling like this; Be equivalent to the individual layer micro-nano ball and become the micro-nano hemisphere of individual layer, constitute micro-nano lens.
7. the auxiliary optically focused photoetching process of micro-nano lens according to claim 4 prepares orderly micro nano structure, it is characterized in that micro-nano lens 12 can be recycled, and is convenient to industrialized standardization, indifference production.
8. the auxiliary optically focused photoetching process of micro-nano lens according to claim 1 prepares orderly micro nano structure, it is characterized in that, in the step 4, if photoresist 11 is positive glue, what then form after the photoetching is the micro-nano mesh of photoresist; If negative glue, what then form after the photoetching is micro-nano post array.Can certainly move micro-nano lens 12 and form more patterns, perhaps the incident direction inclination certain angle exposure with illumination 13 also can form more patterns.
9. the auxiliary optically focused photoetching process of micro-nano lens according to claim 1 prepares orderly micro nano structure, it is characterized in that the figure transfer process in the step 5 can be dry method or wet etching technique.
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| CN103217874A (en) * | 2013-03-29 | 2013-07-24 | 中国科学院力学研究所 | Maskless photoetching system based on colloid microballoon nanometer lens |
| CN103545173A (en) * | 2013-10-28 | 2014-01-29 | 中国科学院半导体研究所 | Manufacturing method for sapphire template with large-area nanometer patterns |
| CN104698742A (en) * | 2013-12-10 | 2015-06-10 | 上海微电子装备有限公司 | Manufacturing method of nano patterned sapphire substrate (PSS) structure |
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