CN103217874A - Maskless photoetching system based on colloid microballoon nanometer lens - Google Patents
Maskless photoetching system based on colloid microballoon nanometer lens Download PDFInfo
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- 239000000084 colloidal system Substances 0.000 title claims abstract description 68
- 238000001259 photo etching Methods 0.000 title abstract description 12
- 239000011807 nanoball Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000011806 microball Substances 0.000 claims description 40
- 238000001459 lithography Methods 0.000 claims description 35
- 239000004005 microsphere Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000002356 single layer Substances 0.000 claims description 9
- 238000004528 spin coating Methods 0.000 claims description 9
- 239000004793 Polystyrene Substances 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229920002223 polystyrene Polymers 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 238000001338 self-assembly Methods 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 13
- 238000012546 transfer Methods 0.000 abstract description 5
- 239000002096 quantum dot Substances 0.000 abstract description 4
- 239000011159 matrix material Substances 0.000 abstract description 3
- 239000002086 nanomaterial Substances 0.000 abstract description 3
- 206010070834 Sensitisation Diseases 0.000 abstract description 2
- 239000004038 photonic crystal Substances 0.000 abstract description 2
- 230000008313 sensitization Effects 0.000 abstract description 2
- 238000010960 commercial process Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000005755 formation reaction Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 239000011805 ball Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 1
- 229950005499 carbon tetrachloride Drugs 0.000 description 1
- 238000001749 colloidal lithography Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002077 nanosphere Substances 0.000 description 1
- 238000000054 nanosphere lithography Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002939 poly(N,N-dimethylacrylamides) Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a maskless photoetching system based on a colloid microballoon nanometer lens, and the maskless photoetching system is used for realizing the transfer of a micro-nano structure. The system based on the existing photoetching system utilizes the nanometer lens prepared by a colloid microballoon to gather light beams, a formed focusing array can carry out sensitization on a photoresist, and dot matrix arrangement with the distance of 100nm-2000nm is realized. The system realizes a micro-nano dot matrix structure, the process is simple, the additional equipment is not needed, and the defects that the micro-nano balls need to repeatedly assemblied, so that the industrialization is hard, the processing efficiency is low, the generated quality can not be controlled in a nanoball photoetching process are overcome. The maskless photoetching system provided by the invention has the advantages that the height of pattern transfer can be controlled, the heights of patterns are accurate and ordered, the patterns are various, the operation is simple, the cost is low, the commercial process is convenient, and the maskless photoetching system has a good application prospect in preparing a nanometer patterned substrate, a quantum dot, a plasma, a mesh electrode, a photonic crystal, a micro-nano device and the like.
Description
Technical field
The present invention relates to a kind of semiconductor microactuator nanoprocessing equipment, particularly a kind of maskless lithography system based on the colloid micro ball nano lens.
Background technology
Conventional lithography process is to project on the photoresist after mask pattern is dwindled several times (1-20 doubly) by optical system, obtains required pattern through developing then.Along with the development of semiconductor industry, characteristic dimension is dwindled day by day, and traditional photoetching faces increasing challenge.On lithographic nano rank figure, bottleneck is arranged, and adopt electron beam exposure can make that cost is big, and be not easy to the large tracts of land suitability for industrialized production.The preparation expense of mask and preparation time (preparation efficiency) also are important challenges in addition.For example the mask price of a cover 90nm integrated circuit is up to millions of dollar, and the manufacturing cycle reaches the several months, and yield rate is low.This causes the short run preparation cost to be difficult to bear.
Advantages such as and the colloid micro-nano ball photoetching (Nanosphere Lithography) that grows up at present is with low cost owing to it, and micro-nano-scale control is accurate are subjected to extensive attention.This method is mainly used in the preparation of nano graph.(Colloidal Lithography) utilizes microballoon optically focused that the ball lattice structure is transferred on the photoresist based on the photoetching of colloid micro ball optically focused, can realize abundanter nanostructured preparation, make that preparation efficiency is low and cause quality uncontrollable but technological process need repeat to assemble micro-nano ball.
Summary of the invention
The technical problem to be solved in the present invention overcomes existing colloid micro-nano ball photoetching technique exactly and need repeat to assemble micro-nano ball and make that preparation efficiency is low and cause the uncontrollable problem of quality, propose a kind of maskless lithography system, need not to repeat to prepare the colloid monolayer microballoon based on the colloid micro ball nano lens.
In order to address the above problem, the invention provides a kind of maskless lithography system, comprise exposure light source, described maskless lithography system also comprises the concentrating element of being made up of colloid micro ball nano lens and colloid micro ball nano lens supporting substrate, and described concentrating element is at exposure light source and wait to expose between the element.
Preferably, above-mentioned maskless lithography system also has following characteristics:
Described maskless lithography system also comprises the exposure mobile platform, and described exposure mobile platform is positioned on the described colloid micro ball nano lens supporting substrate, is used to adjust concentrating element and the distance between the element of waiting to expose.
Preferably, above-mentioned maskless lithography system also has following characteristics:
Described maskless lithography system also comprises knot pixel spare, and described knot pixel spare is between described exposure light source and concentrating element, and the light beam that described exposure light source sends is invested concentrating element by tying the array beams that pixel spare forms required pattern.
Preferably, above-mentioned maskless lithography system also has following characteristics:
Described knot pixel spare is generally microreflection lens array or mask plate.
Preferably, above-mentioned maskless lithography system also has following characteristics:
Described colloid micro ball nano lens is the formed colloid monolayer micro-nano ball array with lattice structure of colloid micro-nano ball.
Preferably, above-mentioned maskless lithography system also has following characteristics:
Described colloid micro-nano ball can be polymer microsphere, for example polystyrene microsphere; Be the transparent inorganic-oxide microballoon perhaps, as silicon dioxide microsphere.
Preferably, above-mentioned maskless lithography system also has following characteristics:
The formation of described colloid monolayer micro-nano ball array can obtain by the method for spin coating or self assembly.
Preferably, above-mentioned maskless lithography system also has following characteristics:
Described colloid micro-nano ball can be sphere, hemisphere or spheroid.
Preferably, above-mentioned maskless lithography system also has following characteristics:
The diameter of described colloid micro-nano ball is 0.05-3um.
Preferably, above-mentioned maskless lithography system also has following characteristics:
The displacement accuracy of described exposure mobile platform is a nanometer.
The present invention is based on existing etching system, utilize the nano lens of colloid micro ball preparation that light beam is assembled, the focusing array of formation is to photoresist sensitization.Can realize that spacing is the dot matrix arrangement of 100nm-2000nm.Nano lens and sample operating distance are 0-5000nm.This system realizes micro-nano lattice structure, and technology is simple, does not need to add extra equipment.This technology has overcome in the nanosphere photoetching process, need repeat to assemble shortcoming such as the low and consequent quality of industrialization difficulty, process efficiency that micro-nano ball causes is uncontrollable.
The present invention is highly controlled on figure transfer, the figure height is accurately orderly, graphic pattern is various, simple to operate, with low cost, is convenient to suitability for industrialized production.On preparation nano graph substrate, quantum dot, plasma, mesh electrodes, photonic crystal and micro-nano device etc., good application prospects is arranged.Can be widely used in semiconductor photoelectronic device micro nano structure manufacturings such as LED, LD, HEMT, quantum dot memory, solar cell, fuel battery double plates, micro-fluidic device.
Description of drawings
Fig. 1 is the maskless lithography system based on the colloid micro ball nano lens of the embodiment of the invention;
Fig. 2 is the maskless lithography system based on the colloid micro ball nano lens of knot pixel spare of the additional formation array beams of the embodiment of the invention;
Fig. 3 is the ball shaped nano microsphere lens piece preparation method synoptic diagram of the embodiment of the invention;
Fig. 4 is the semisphere Nano microsphere lens preparation method synoptic diagram of the embodiment of the invention;
Wherein, 10-light source; 11-light beam; 12-mobile platform; 13-Nano microsphere lens supports substrate, 14-Nano microsphere lens, 13 and 14 common formation concentrating elements; Array beams after the lens focus of 15-Nano microsphere; 16-photoresist, 17-substrate, 16 and 17 common formations element to be exposed; The knot pixel spare of 18-formation array beams; The array beams of 19-formation, 20-water liquid level, 21-water, 22-tank.
Embodiment
Hereinafter will be elaborated to embodiments of the invention in conjunction with the accompanying drawings.Need to prove that under the situation of not conflicting, embodiment among the application and the feature among the embodiment be combination in any mutually.
The invention provides a kind ofly, adopt the colloid micro ball nano lens as concentrating element based on the maskless lithography system of colloid micro ball nano lens as concentrating element.
As shown in Figure 1, the maskless lithography system of the embodiment of the invention comprises the required exposure light source 10(of exposure, and it forms light beam 11), exposure mobile platform 12 and the concentrating element formed by colloid micro ball nano lens supporting substrate 13 and colloid micro ball nano lens 14, photoresist 16 and substrate 17 formations element to be exposed are arranged under the concentrating element.
Adopt exposure mobile platform 12 in order to adjust the distance between concentrating element (constituting) and the element to be exposed (constituting) by photoresist 16 and substrate 17 by colloid micro ball nano lens supporting substrate 13 and colloid micro ball nano lens 14, owing to be that micro-nano ball constitutes colloidal nano microsphere lens 14, its focal length is shorter, and the displacement accuracy of the mobile platform 12 that therefore exposes is a nanometer.
Colloid micro ball nano lens 14 is the formed colloid monolayer micro-nano ball array with lattice structure of colloid micro-nano ball.The colloid micro-nano ball can be polymer microsphere, for example polystyrene microsphere; Be the transparent inorganic-oxide microballoon perhaps, as silicon dioxide microsphere.The formation of array can obtain by spin coating (spin coating) or self-assembling method.The microballoon that forms array can be sphere, hemisphere or spheroid.
Here a little detailed descriptions are done in the formation of concentrating element:
Method one: get colloid microsphere nano lens supports substrate 13, cover the colloid micro ball nano lens 14 of an individual layer in the above, form hemisphere or convex surface ball by high annealing, and and the substrate combination firmly, constitute a whole mobile lens sheet.Colloid micro ball nano lens supporting substrate 13, its material are organic and inorganic materials such as two polishing sapphires, piezoid, silicon chip, glass sheet, plastics, resin, silica gel, as long as to the basic transparent dielectric material fully of exposure wave band.Colloid micro ball nano lens 14 can be that polystyrene spheres, silica spheres, PDMS ball, alumina balls, cesium chloride ball etc. can be by the single-layer and transparent balls of self-assembling technique arrangement, and diameter is 0.05-3um.
Method two: get colloid microsphere nano lens supports substrate 13 as Fig. 1, cover colloid microsphere nano lens 14 in the above, fill glue, constitute a micro-nano lens of integral body at gap location.Filling glue can be PDMS, PDMA, and silica gel, titanium oxide gel, other organic and inorganic colloid such as common photoresist, requiring must be close or equal with the refractive index of colloid micro ball nano lens 14.After filling like this, be equivalent to the individual layer micro-nano ball and become the micro-nano hemisphere of individual layer, constitute micro-nano lens.Also can fill dielectric materials such as silicon dioxide, silicon nitride with the method for sputter is fixed on colloid micro ball nano lens 14 on the micro-nano lens supports substrate 13.
As shown in Figure 2, described maskless lithography system also can comprise knot pixel spare 18, it is between exposure light source 10 and concentrating element, can realize investing concentrating element (colloid micro ball nano lens supporting substrate 13 and colloid micro ball nano lens 14 constitute) after the light beam 11 that exposure light source 10 is sent forms array, form required pattern array light beam 19.Knot pixel spare 18 is generally microreflection lens array or mask plate.
Simply introduce individual layer micro-nano ball (particle diameter 50nm-3000nm) film (colloid micro ball nano lens) preparation method below: the colloid micro ball that preparation colloid micro ball nano lens adopts mainly is macromolecule and inorganic colloid microballoon, as polystyrene microsphere (PS) and silicon dioxide (SiO2) microballoon, the particle diameter of these colloid micro balls is at 50nm-3000nm.In the test, select corresponding microspherulite diameter for use according to required micro-nano graphic feature yardstick.Prepare at present the common method that adopts of two-dimensional colloidal crystal and the LB film method is arranged, the colloid monolayer crystal film that self assembly or spin-coating method (spin-coating) composition rule is arranged.
Self-assembly method: this example utilizes surface tension of liquid, forms individual layer micro-nano ball film by microballoon in water surface self assembly, as shown in Figure 3.Implementation process is as follows: colloid micro ball disperses in the diffusant mixed liquor in water, and is ultrasonic evenly standby.This solution is labeled as A.Dress water 21 in a tank 22 is used A is slowly dripped at water surface, because capillary effect, microballoon can be self-assembled into colloid micro ball nano lens 14 and float over the surface of water on the surface.The substrate that scribbles photoresist inserted in the water slowly mention, individual layer micro-nano ball film just can be transferred to the photoresist surface like this.When colloid micro ball nano lens 14 swam on the water liquid level 20, the organic solvent of swellable polystyrene such as square tube toluene, ethyl acetate, acetone, tetrachloromethane can be prepared semisphere micro-nano lens, as shown in Figure 4 on Nano microsphere lens 14.
Spin-coating method: utilize spin coating equipment, drip microballoon water (organic solvent) solution,, form individual layer micro-nano ball film at substrate surface by turning effort at substrate surface.Colloid micro ball disperses in water (organic solvent), and is ultrasonic evenly standby.This solution is labeled as B.The substrate that scribbles photoresists is positioned in the spin coating equipment prepares to film.Drip B on photoresists surfaces and cause and be paved with the surface fully, leave standstill 10-1000s, regulate the rotation program, rotating speed is controlled at 100-30000r/min, and the time is 5-1000s.Obtain individual layer micro-nano ball film on the photoresist surface.
In sum, the preparation of colloid micro ball nano lens no longer needs to repeat to prepare the colloid monolayer microballoon, utilizes the colloid micro ball nano lens as collective optics, can realize the transfer of micro nano structure.Solved the preparation that repeats of micro-nano ball.
Colloid micro ball nano lens collective optics only need carry out the transfer that simple refit can be embodied as nanostructured to existing etching system.Compare the existing preparation mode,, do not need to increase new equipment and special macromolecule glue as nano impression.Whole technology is with low cost, the preparation efficiency height.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. maskless lithography system, comprise exposure light source, it is characterized in that described maskless lithography system also comprises the concentrating element of being made up of colloid micro ball nano lens and colloid micro ball nano lens supporting substrate, described concentrating element is at exposure light source and wait to expose between the element.
2. maskless lithography system as claimed in claim 1 is characterized in that,
Described maskless lithography system also comprises the exposure mobile platform, and described exposure mobile platform is positioned on the described colloid micro ball nano lens supporting substrate, is used to adjust concentrating element and the distance between the element of waiting to expose.
3. maskless lithography system as claimed in claim 1 or 2 is characterized in that,
Described maskless lithography system also comprises knot pixel spare, and described knot pixel spare is between described exposure light source and concentrating element, and the light beam that described exposure light source sends is invested concentrating element by tying the array beams that pixel spare forms required pattern.
4. maskless lithography system as claimed in claim 3 is characterized in that,
Described knot pixel spare is generally microreflection lens array or mask plate.
5. maskless lithography system as claimed in claim 1 or 2 is characterized in that,
Described colloid micro ball nano lens is the formed colloid monolayer micro-nano ball array with lattice structure of colloid micro-nano ball.
6. maskless lithography system as claimed in claim 5 is characterized in that,
Described colloid micro-nano ball can be polymer microsphere, for example polystyrene microsphere; Be the transparent inorganic-oxide microballoon perhaps, as silicon dioxide microsphere.
7. maskless lithography system as claimed in claim 5 is characterized in that,
The formation of described colloid monolayer micro-nano ball array can obtain by the method for spin coating or self assembly.
8. maskless lithography system as claimed in claim 5 is characterized in that,
Described colloid micro-nano ball can be sphere, hemisphere or spheroid.
9. maskless lithography system as claimed in claim 5 is characterized in that, the diameter of described colloid micro-nano ball is 0.05-3um.
10. maskless lithography system as claimed in claim 2 is characterized in that, the displacement accuracy of described exposure mobile platform is a nanometer.
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| CN201310106402.5A CN103217874B (en) | 2013-03-29 | 2013-03-29 | Maskless lithography system based on colloid micro ball nano lens |
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| CN201310106402.5A CN103217874B (en) | 2013-03-29 | 2013-03-29 | Maskless lithography system based on colloid micro ball nano lens |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104174999A (en) * | 2014-08-13 | 2014-12-03 | 清华大学 | Method for preparing surface micro-nano figure through two steps |
| CN104355287A (en) * | 2014-11-18 | 2015-02-18 | 中国科学院半导体研究所 | Manufacturing method of multifunctional combined nanometer pattern |
| CN104698768A (en) * | 2013-12-10 | 2015-06-10 | 上海微电子装备有限公司 | Photoetching exposure system |
| CN105858594A (en) * | 2016-04-15 | 2016-08-17 | 清华大学 | Steel structure surface processing method |
| CN107199403A (en) * | 2017-05-18 | 2017-09-26 | 长春理工大学 | One kind utilizes TiO2The method of the super diffraction limit processing of array of particles auxiliary femtosecond laser |
| CN110187599A (en) * | 2019-07-02 | 2019-08-30 | 电子科技大学 | A kind of lenticule mask and preparation method thereof |
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| CN101470346A (en) * | 2007-12-27 | 2009-07-01 | 上海科学院 | Non-mask photo-etching system based on nano lens |
| CN102701143A (en) * | 2012-06-14 | 2012-10-03 | 吴奎 | Lithography process with micro-nano lens for auxiliary light condensation for preparing ordered micro-nano structure |
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2013
- 2013-03-29 CN CN201310106402.5A patent/CN103217874B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101470346A (en) * | 2007-12-27 | 2009-07-01 | 上海科学院 | Non-mask photo-etching system based on nano lens |
| CN102701143A (en) * | 2012-06-14 | 2012-10-03 | 吴奎 | Lithography process with micro-nano lens for auxiliary light condensation for preparing ordered micro-nano structure |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104698768A (en) * | 2013-12-10 | 2015-06-10 | 上海微电子装备有限公司 | Photoetching exposure system |
| CN104698768B (en) * | 2013-12-10 | 2017-02-01 | 上海微电子装备有限公司 | Photoetching exposure system |
| CN104174999A (en) * | 2014-08-13 | 2014-12-03 | 清华大学 | Method for preparing surface micro-nano figure through two steps |
| CN104174999B (en) * | 2014-08-13 | 2016-09-21 | 清华大学 | Utilize the method that two-step method prepares surface micro-nano graph |
| CN104355287A (en) * | 2014-11-18 | 2015-02-18 | 中国科学院半导体研究所 | Manufacturing method of multifunctional combined nanometer pattern |
| CN104355287B (en) * | 2014-11-18 | 2016-08-24 | 中国科学院半导体研究所 | A kind of multifunctional combination type nano graph preparation method |
| CN105858594A (en) * | 2016-04-15 | 2016-08-17 | 清华大学 | Steel structure surface processing method |
| CN107199403A (en) * | 2017-05-18 | 2017-09-26 | 长春理工大学 | One kind utilizes TiO2The method of the super diffraction limit processing of array of particles auxiliary femtosecond laser |
| CN107199403B (en) * | 2017-05-18 | 2019-12-31 | 长春理工大学 | By using TiO2Method for assisting femtosecond laser super-diffraction limit processing by particle array |
| CN110187599A (en) * | 2019-07-02 | 2019-08-30 | 电子科技大学 | A kind of lenticule mask and preparation method thereof |
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| CN103217874B (en) | 2016-08-31 |
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