CN101470346A - Non-mask photo-etching system based on nano lens - Google Patents
Non-mask photo-etching system based on nano lens Download PDFInfo
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- CN101470346A CN101470346A CNA2007101733669A CN200710173366A CN101470346A CN 101470346 A CN101470346 A CN 101470346A CN A2007101733669 A CNA2007101733669 A CN A2007101733669A CN 200710173366 A CN200710173366 A CN 200710173366A CN 101470346 A CN101470346 A CN 101470346A
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Abstract
The invention discloses a maskless photo-etching system based on nanometer lenses, which is used to increase exposure pixel resolution of maskless photo-etching. The maskless photo-etching system comprises a movable platform, an optical imaging system and a focusing array, wherein a to-be-exposed element is placed on the movable platform, the optical imaging system provides a patterning beam array needed for exposing the element, and the focusing array is formed by nanometer lenses, wherein every nanometer lens correspondingly focuses on every beam projected to the element in the patterning beam array. The nanometer lenses can have pixel resolution which is superior to that of the traditional zone plate, and even can break through the diffraction limitation of 1/2 wavelength of an optical lens. Further, the work distance of the nanometer lens can range from 1micron to 100 microns.
Description
Technical field
The present invention relates to semiconductor manufacturing facility, relate in particular to a kind of maskless lithography system that uses nano lens as concentrating element.
Background technology
In traditional projection lithography technology (projection optical lithography), the pattern on the mask dwindles several times (being generally 4-10 doubly) by an optical system, and projects on the photoresist (photoresist).Can on photoresist, obtain the mask pattern that dwindles through develop (development) then.
Along with development of semiconductor, the characteristic dimension of integrated circuit (Integrated Circuits is called for short IC) is dwindled day by day, and conventional lithography is faced with increasing challenge, and one of them is the expense and the manufacturing time of mask.One the cover be used for the 90nm integrated circuit the mask price up to 100 ten thousand dollars, the manufacturing cycle reaches 3 months, and have 70% may be out of use.IC for short run produces, as custom layout ASIC, and, the expense of mask and cycle more and more can't bear.
The development of nanometer technology also has demand widely to photoetching, because photoetching is to obtain the material of nanometer scale and the main means of system.But it is expensive and mask consuming time makes the deep-submicron photoetching almost can't be used for nanometer technology.
Maskless photoetching technology (maskless lithography) provide the scheme that addresses these problems.The scheme that proposes has at present:
The maskless projection lithography, Maskless Optical Projection Lithography (MOPL): with the mask in a programmable microreflection lens array or the alternative conventional lithography of liquid crystal array.This array produces desired pattern under computer control, this pattern is dwindled by an optical system and projects on the photoresist.The subject matter of MOPL technology is: the minification of required optical system is very big, is generally 80-200 doubly.So system cost is too high.
The array of zone plates photoetching, Zone Plate Array Lithography (ZPAL): as US patent application publication US20050181314, programmable microreflection lens array or liquid crystal array are thrown into one group of light beam on one group of micro lens (as zone plate).This group micro lens focuses on incident beam on the photoresist, forms one group of pixel.By scanning and switch light beam, can generate arbitrary graphic pattern then.The subject matter of this technology is: the resolution of micro lens, promptly the diameter of pixel is subjected to the restriction of wavelength.In addition the diameter restrictions of micro lens the quantity of available micro lens, so the speed that pattern generates is slower.
Beamwriter lithography, Electron Beam Lithography (EBL).In photoresist, generate arbitrary graphic pattern by scanning beam.This technology resolution is the highest, but photoetching speed is slow.For reaching practical, need in a system, to use a plurality of electron beams, this emission and control to electron beam all is great challenge, so still there is not practical system.The cost of the system that is developing is all very high.
Summary of the invention
For this reason, the invention provides a kind of maskless lithography system, adopt nano lens, therefore higher resolution can be arranged as concentrating element based on nano lens.
The present invention proposes a kind of maskless lithography system based on nano lens, comprising: moveable platform, place element to be exposed on it; The optics knot provides the required patterned beam array of this element exposure as system; And the focusing array, form by nano lens, wherein each nano lens focus on correspondingly in this patterned beam array each invest the light beam of this element.
In the above-mentioned maskless lithography system based on nano lens, described optics knot comprises as system: the light source that exposing light is provided; Make exposing light beam invest the optical projection apparatus of described element; And the part light that optionally makes light source and sent invests optical projection apparatus, puts with the beam pattern makeup that forms described pattern beam array.
In the above-mentioned maskless lithography system based on nano lens, described beam pattern makeup is put and is comprised the microreflection lens array.
In the above-mentioned maskless lithography system based on nano lens, described beam pattern makeup is put and is comprised the liquid crystal micro array.
In above-mentioned maskless lithography system based on nano lens, also comprise a control device, it puts formed patterned beam array according to the described beam pattern makeup of a photoengraving pattern Data Control, and drives described moveable platform to determine the exposure area of described element.
In above-mentioned maskless lithography system based on nano lens, a kind of nano lens comprises transparent substrates and is formed at suprabasil lighttight metal film, have a plurality of donuts on this metal film, in each annulus, from the inside radius r of n outside annulus of its center of circle
NiSatisfy: r
Ni=nr
0, r
0Be preset parameter, n=1,2 ..., the external radius of n annulus satisfies: r
No=r
Ni+ w, wherein w is a preset parameter.
In above-mentioned nano lens, respectively this annulus runs through this metal film, and perhaps respectively this annulus does not run through this metal film, and the thickness of metal film that is not run through is between 20nm～60nm.
In above-mentioned nano lens, r
0Between 1～10 times lambda1-wavelength, w is less than lambda1-wavelength.
In above-mentioned nano lens, n is between 1～6.
In above-mentioned nano lens, this metal film center has an aperture, and this aperture is positioned at the center of circle of each donut.
In the above-mentioned maskless lithography system based on nano lens, distance this nano lens and semiconductor chip is between 1～100 micron.
In the maskless lithography system of above-mentioned nano lens, another kind of nano lens comprises transparent substrates and is formed at suprabasil lighttight metal film, wherein, has the array that forms by a plurality of apertures on this metal film, the breadth extreme of each aperture is w, the center distance of adjacent aperture is d, and wherein w satisfies: w≤2 times lambda1-wavelength, d is between 2w～10w.
In above-mentioned nano lens, respectively this aperture be square hole, circular hole,, tri-angle-holed and diamond hole one of them.
In above-mentioned nano lens, w is between 0.1 to 0.5 times of lambda1-wavelength.
Because the present invention adopts the concentrating element of nano lens as maskless lithography system, this nano lens and traditional optical lens, particularly compare with zone plate, its imaging resolution has been broken through traditional diffraction limit of λ/2, and its operating distance is in 1～100 micron this suitable interval.Therefore etching system can obtain higher pixel resolution, can realize the photoetching of 32-350 nanometer with the light source of existing 248-420nm wavelength.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated, wherein:
Fig. 1 is the maskless lithography system block diagram that uses microreflection lens array and nano lens according to an embodiment of the invention.
Fig. 2 is the maskless lithography system block diagram that uses liquid crystal array and nano lens in accordance with another embodiment of the present invention.
Fig. 3 A and Fig. 3 B are respectively the nano lens sectional view and the vertical views of first embodiment of the invention.
Fig. 4 A and Fig. 4 B are respectively the nano lens sectional view and the vertical views of second embodiment of the invention.
Fig. 5 is the nano lens sectional view of third embodiment of the invention.
Fig. 6 is the nano lens sectional view of fourth embodiment of the invention.
Fig. 7 A and Fig. 7 B are respectively the nano lens sectional view and the vertical views of fifth embodiment of the invention.
Fig. 8 A is the outgoing light field analogous diagram of nano lens according to an embodiment of the invention.
Fig. 8 B is the distribution plan of the formed light field of nano lens on optical axis direction according to an embodiment of the invention.
Fig. 8 C be according to an embodiment of the invention the formed hot spot main lobe width of nano lens along the variation diagram of optical axis direction.
Fig. 9 is the surface of intensity distribution of the several position on z-plane of outgoing light field according to an embodiment of the invention.
Embodiment
In present maskless photoetching technology, array of zone plates photoetching technique for example, its resolution mainly is the resolution that is subject to the micro lens that is used to focus on.For this reason, maskless lithography system based on nano lens proposed by the invention adopts nano lens to constitute the focusing array, optics knot provides the required patterned beam array of resist exposure on the semiconductor chip for example as system, a pixel on the corresponding semiconductor chip of the miniature light beam of in this beam array each is through the beam array behind the patterning will wherein each pixel be bright or dark according to the exposing patterns control that will generate.Each that focuses on that each nano lens in the array focuses in this patterned beam array correspondingly is miniature, to invest this semiconductor chip.Semiconductor chip for example is to be placed on the moveable platform, and when exposure, mobile this platform just can be selected the exposure area on the semiconductor chip.
Nano lens of the present invention is a kind of optical device that utilizes metal surface phasmon (Surface Plasmon) to focus on (near-field focusing) in the near field.Its structure is to have evaporated the layer of metal film on the glass substrate, and the aperture or the concentric circles (metalnanostructure) of some nano-scales arranged in the metallic film.When the light of certain wavelength during from the back side illuminaton of substrate, metal Nano structure (metalnanostructure) will be focused into arrow beam of light with light.The nano lens width of light beam can be less than 1/2 of lambda1-wavelength, and its operating distance can be suitable for the photoetching in semiconductor manufacturing and the nanoprocessing between 1～100 micron.
With real example maskless lithography system of the present invention is described below.
At first please refer to shown in Figure 1ly, the maskless lithography system structure is as follows according to an embodiment of the invention.The light source (figure does not show) that exposing light 100 is provided, this exposure light for example is ultraviolet light or laser.A microreflection lens array 110, the controlled minitype reflector of a plurality of reflection directions 112 is arranged on it, each minitype reflector 112 can be by changing its reflection direction whether to select beam reflection with light source irradiation to optical projection apparatus 120, promptly carry out the control of " opening " and " pass ", to form the miniature light beam 102 of width about micron.Thereby the beam array of the light forming patternization that reflected of whole array 110.Optical projection apparatus 120 makes the patterned beam array form the projected light 104 of investing the photoresist 140 on the semiconductor chip 150.The focusing array of being made up of a large amount of nano lens 130 focuses on these projected light beams forming nanometer light beam 106, and exposes on photoresist 140.According to different structures, the width of nanometer light beam can be from tens nm to several thousand nm.Just become bright pixel by the nanometer light beam exposed areas, and the zone that is not exposed is dark pixel.
In the present embodiment, each miniature light beam 102 also can be formed by several minitype reflector 112.These several catoptrons open or close simultaneously.When each miniature light beam is formed by several catoptrons, can reduce the instability of the miniature light beam that brings by the difference of the reflectivity of minitype reflector and switching speed.
The semiconductor chip 150 that applies photoresist 140 is positioned on the mobile platform 160, this mobile platform is connected in a control device 170, and this control device produces driving microreflection lens array according to the photoengraving pattern that wherein stores on the one hand and opens or closes to produce the drive signal 172 of patterned beam array; On the other hand, control device 170 is also synchronously exported movable signal 174, and mobile platform 160 is moved to change the exposure area.After one group of pixel of exposure, the mobile platform 160 that is loaded with substrate 150 moves to another position to substrate, the one group of new pixel of exposing.This displacement is called " step-length " (step).The selection of step-length can be determined according to the pattern that will expose.For example: when wanting exposed lines, step-length can be less than pixel wide.When exposing a set of contact hole (contact hole), step-length should be greater than pixel wide.
In exposure process, mobile platform is usually in x and y direction (being horizontal direction) displacement.But also can move in z direction (being vertical direction).There is the z direction of control to move, can improves the depth of field (depthof field), and then improve the stability of producing.
In the above example, use the microreflection lens array as beam pattern makeup put, the part light that optionally makes light source and sent is invested optical projection apparatus, to form above-mentioned pattern beam array.The microreflection lens array can adopt Digital Light Processing (DLP) chip of Texas Instruments or Grating Light Valve (GLV) chip of Silicon Light Machine.The present invention can also use following transmission-type array to put as this beam pattern makeup.
Fig. 2 is a maskless lithography system block diagram in accordance with another embodiment of the present invention.In this embodiment, other structures are same as the previously described embodiments, difference is, this maskless lithography system uses the liquid crystal micro array 210 of transmission-type to produce miniature light beam 102, thereby each liquid crystal dots 211 in the array 210 can be separately by Control of Voltage printing opacity or light tight, thereby forms the miniature light beam 102 of a plurality of width about micron.In addition, each miniature light beam also can be formed together by several liquid crystal dots.These several liquid crystal dots open or close simultaneously.When each miniature light beam the time, can reduce the instability of the miniature light beam that brings by the difference of the transmissivity of liquid crystal dots and switching speed by the control of several liquid crystal dots.
Nano lens is called " operating distance " to the distance of the photoresist structures shape by nano lens, is generally tens nanometers to tens micron.Operating distance choose the characteristic that must meet nano lens, otherwise can not in photoresist, obtain required focused beam.
The above-mentioned maskless system used wavelength of 100,200 work includes but not limited to 193-420nm, and wherein the size of each pixel is by the incident light wavelength, the focusing power of nano lens, decisions such as operating distance and incident light intensity.In general, wavelength is short more, and pixel is more little.Operating distance is near more, and pixel is more little.When using positive photoetching rubber, incident intensity is big more, and pixel is more little.
In the above embodiments, the design of nano lens (nanolens) and manufacturing are the key factors that influences the maskless lithography quality.The structure of nano lens used in the present invention is described with several embodiment below.
Fig. 3 A and Fig. 3 B are the nano lens structural representation of first embodiment of the invention.As shown in the figure, the bottom of nano lens 10 is a light-transparent substrate 11, and substrate should see through employed light or electromagnetic wave (comprising microwave, millimeter wave, near infrared, infrared, visible light, ultraviolet light etc.), and its material can be quartzy, plastics etc.Have the lighttight metal film 12 of one deck in the substrate, this metal film 12 for example forms with evaporation process.The thickness t of metal film
0Usually be no more than lambda1-wavelength λ, in order to avoid the decay of transmitted light is too big.In one embodiment, t
0Can be 100nm.In addition, the material of metal film for example is a gold, silver, titanium, aluminium etc.
Have several donuts 13 (shown in the figure 4) on the metal film 12.The number of annulus is generally 1 to 6, but also can be more.These donuts 13 run through metal film 12, make incident light to pass through, and the light that passes through is focused the light beam that forms nano-width.These donuts meet the following conditions: n (n=1,2,3...) inside radius of individual annulus is:
r
ni＝nr
0 ............(1)
N (n=1,2,3...) external radius of individual annulus is:
r
no＝r
ni+w ...............(2)
Here r
0With w be design parameter given in advance.Common r
0Greater than lambda1-wavelength λ, and w is less than wavelength X.But r
0Can not be much larger than wavelength, otherwise do not interact between each annulus.R preferably
0Between 1 λ～10 λ.
For instance, when wavelength is 405nm, r
0Can be 2-3 μ m, w can be 100-300nm, t
0Can be 100-150nm.
Fig. 4 A and Fig. 4 B illustrate the nano lens structure of second embodiment of the invention.The bottom of nano lens 20 is a light-transparent substrate 21, for example is a glass sheet.Have the lighttight metal film 22 of one deck in the substrate, this metal film 22 for example forms with evaporation process.The thickness t of metal film 22
1Usually be no more than lambda1-wavelength λ, in order to avoid the decay of transmitted light is too big.In one embodiment, t
1For example be 100nm.In addition, the material of metal film for example is a gold, silver, titanium, aluminium etc.
Have the donut 24 that an aperture 23 and several (shown in the figure 2) are the center of circle with this aperture 23 on the metal film 22.This aperture 23 and these donuts 24 make incident light to pass through, and the light that passes through is focused the light beam that forms nano-width.The radius of aperture 23 is w
0, w
0Less than wavelength X, in one embodiment, hole diameter for example is 160nm.
N (n=1,2,3...) inside radius of individual annulus satisfies:
r
ni＝nr
0 ............(1)
N (n=1,2,3...) external radius of individual annulus satisfies:
r
no＝r
ni+w ...............(2)
Here r
0With w be design parameter given in advance.Common r
0Greater than lambda1-wavelength λ, and w is less than wavelength X.But r
0Can not be much larger than wavelength, otherwise do not interact between each annulus.R preferably
0Between 1 λ～10 λ.
For instance, when wavelength is 405nm, r
0Can be 2-3 μ m, w can be 100-300nm, t
1Can be 100-150nm.
Fig. 5 is the nano lens structural representation of third embodiment of the invention.The bottom of nano lens 30 is a light-transparent substrate 31, for example is a glass sheet.Have the lighttight metal film 32 of one deck in the substrate, this metal film 32 for example forms with evaporation process.The thickness t of metal film 32
2Usually be no more than lambda1-wavelength λ, in order to avoid the decay of transmitted light is too big.In one embodiment, t
2For example be 100nm.
Have several donuts 33 (shown in the figure 4) on the metal film 32.It is worthy of note that these donuts 33 also not exclusively run through metal film 32, but residual at each annulus 33 place than thin metal film 32a.The thickness of these metal films 32a is Δ t
2In general, Δ t
2Be at least 20nm, otherwise can not the partly shielding effect incident light.But Δ t
2Can not be too thick, generally be no more than 60nm, otherwise the complete conductively-closed of incident light, annulus is with inoperative.Be thickness of metal film between 20nm～60nm, by the exciting of metal surface, still can make incident light to pass through under this situation, and the light that passes through is focused the light beam that forms nano-width.
These donuts meet the following conditions: n (n=1,2,3...) inside radius of individual annulus is:
r
ni＝nr
0 ............(1)
N (n=1,2,3...) external radius of individual annulus is:
r
no＝r
ni+w ...............(2)
Here r
0With w be design parameter given in advance.Common r
0Greater than lambda1-wavelength λ, and w is less than wavelength X.But r
0Can not be much larger than wavelength, otherwise do not interact between each annulus.R preferably
0Between 1 λ～10 λ.
For instance, when wavelength is 405nm, r
0Can be 2-3 μ m, w can be 100-300nm, t
2Can be 100nm, Δ t
2Be 30nm.The number of annulus is generally 1 to 6, but also can be more.
Fig. 6 is the nano lens sectional view of fourth embodiment of the invention.The bottom of nano lens 40 is a light-transparent substrate 41, for example is a glass sheet.Have the lighttight metal film 42 of one deck in the substrate, this metal film 42 for example forms with evaporation process.The thickness t of metal film 42
3Usually be no more than lambda1-wavelength λ, in order to avoid the decay of transmitted light is too big.In one embodiment, t
3For example be 100nm.
Have the donut 44 that an aperture 43 and several (shown in the figure 2) are the center of circle with this aperture 43 on the metal film 42.It is worthy of note that these donuts 43 also not exclusively run through metal film 42, but residual at each annulus 43 place than thin metal film 42a.The thickness of these metal films 42a is Δ t
3In general, Δ t
3Be at least 20nm, otherwise can not the partly shielding effect incident light.But Δ t
3Can not be too thick, generally be no more than 60nm, otherwise the complete conductively-closed of incident light, annulus is with inoperative.Be thickness of metal film between 20nm～60nm, by the exciting of metal surface, still can make incident light to pass through under this situation, and the light that passes through is focused the light beam that forms nano-width.This aperture 43 and these donuts 44 make incident light to pass through, and the light that passes through is focused the light beam that forms nano-width.In addition, the radius of aperture 43 is w
0, less than wavelength X.
N (n=1,2,3...) inside radius of individual annulus satisfies:
r
ni＝nr
0 ............(1)
N (n=1,2,3...) external radius of individual annulus satisfies:
r
no＝r
ni+w ...............(2)
Here r
0With w be design parameter given in advance.Common r
0Greater than lambda1-wavelength λ, and w is less than wavelength X.But r
0Can not be much larger than wavelength, otherwise do not interact between each annulus.R preferably
0Between 1 λ～10 λ.
For instance, when wavelength is 405nm, r
0Can be 2-3 μ m, w can be 100-300nm, t
3Can be 100nm, Δ t
3Be 30nm.The number of annulus is generally 1 to 6, but also can be more.
Nano lens of the present invention is not limited to above-mentioned donut structure, when the aperture of nano-scale is formed array of orifices, also can produce similar focusing effect.Fig. 7 is the nano lens structural representation of fifth embodiment of the invention.The bottom of nano lens 50 is a light-transparent substrate 51, for example is a glass sheet.Have the lighttight metal film 52 of one deck in the substrate, this metal film 52 for example forms with evaporation process.The thickness t of metal film 52
4Usually be no more than lambda1-wavelength λ, in order to avoid the decay of transmitted light is too big.In one embodiment, t
4For example be 100nm.
Have the array of being made up of several apertures 53 on the metal film 52, these apertures 53 make incident light to pass through, and the light that passes through is focused the light beam that forms nano-width.Aperture can be a square hole, circular hole, or other shapes such as triangle and rhombus.The breadth extreme of aperture 53 is w, and the center distance of adjacent aperture is d.Usually w is no more than 2 times of wavelength, and commonly used is 0.1 to 0.5 times of wavelength.And d is generally 2w to 10w.In one embodiment, w is 40nm, and d is 80nm.
The imaging characteristics of nano lens of the present invention is described below.
Fig. 8 A is the light field analogous diagram of a formation that nano lens focuses on.This nano lens similar with nano lens shown in second embodiment, difference is that these lens include only an annulus and an aperture, more specifically, hole diameter w
0=160nm, 3 microns of internal radius, 3.2 microns of external diameters, the thickness t of metallic film
1Be 100nm.Light is from substrate 21 (with reference to Fig. 4 A) back side vertical incidence of lens, wavelength 405nm, circular polarization.Incident and outgoing light field are obtained by TEMPEST emulation.TEMPEST is the software for calculation that Maxwell (Maxwell) equation is found the solution in a strictness, is used for the numerical simulation of 3 D electromagnetic field.
Fig. 8 B is the distribution of the formed light field of this nano lens on optical axis direction.Optical axis is along the z direction, perpendicular to nano lens, by the center of circle of central small hole.For the purpose of clear, the surface of supposing nano lens is the plane of z=0.The distribution of light intensity I that Fig. 8 B has drawn and distributed along optical axis.By Fig. 6 A and Fig. 6 B as seen, the outgoing light field is in the distance metal surface 0.5,1.1,1.8,2.7, locates to focus on for 4.3 microns to form arrow beam of light.
Fig. 8 C is the variation of hot spot main lobe width along the z direction.At distance metal surface 1.8,2.7 and 4.3 microns places, spot width (FWHM, i.e. halfwidth) is about the 200-320 nanometer, and promptly 1/2 of lambda1-wavelength.So the operating distance of nano lens, promptly focal length can be elected 1.8,2.7 or 4.3 microns as.When the sensitization object being placed in one an operating distance place, can expose obtains required pixel.In other examples, different according to lambda1-wavelength and geometric parameter, the focal length of nano lens can change between 1～100 micron.
Fig. 9 is the light distribution of outgoing light field on several z-planes shown in Figure 8.The diameter of hot spot is commonly defined as about peak value two 1/2 distances between peak value, i.e. FWHM (full width at half maximum).As seen from the figure, be 1.8,2.7,4.3 microns places in operating distance (being the distance of focussing plane) to nano lens, spot diameter is the 200-320 nanometer.At 1.8 microns places of operating distance, hot spot is that 1 perfect lens can focus on the hot spot (0.52 λ=210 nanometers) that produces less than numerical aperture.So the imaging resolution of this nano lens is higher than the lens of traditional optical, comprises zone plate.
In addition, the spot diameter of nano lens depends on a plurality of variablees, comprises lambda1-wavelength, the material of metal film, the thickness of metal film, the geometric parameter of annulus etc.In general, lambda1-wavelength is short more, and metal film is thick more, and circle diameter is big more, and then spot diameter is more little.
It is worthy of note, and the exposure of nano lens and near field optic flying-spot microscope (near-fieldscanning optical microscope, NSOM) similar.NSOM also can realize sub-wavelength lithography, but the light beam of Near-field Optical Microscope too a little less than, and operating distance (working distance) lacks very much (little what 10 nanometers), so can not be used for photoetching.And the operating distance of above-mentioned nano lens reaches the 1-100 micron, so be applicable to semiconductor manufacturing (semiconductor manufacturing) and nanoprocessing (nanofabrication).
Therefore, this nano lens and traditional optical lens are particularly compared with zone plate, and its imaging resolution has been broken through traditional diffraction limit of λ/2, and its operating distance is in 1～100 micron this suitable interval.When adopting nano lens as the concentrating element of maskless lithography system, can obtain higher pixel resolution, therefore can be with the photoetching of the light source realization 32-350 nanometer of existing 248-420nm wavelength.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little modification and perfect, so protection scope of the present invention is when with being as the criterion that claims were defined.
Claims (15)
1, based on the maskless lithography system of nano lens, comprising:
Moveable platform is placed element to be exposed on it;
The optics knot provides the required patterned beam array of this element exposure as system;
Focus on array, form by nano lens, wherein each nano lens focus on correspondingly in this patterned beam array each invest the light beam of this element.
2, the maskless lithography system based on nano lens as claimed in claim 1 is characterized in that, described optics knot comprises as system:
The light source of exposing light is provided;
Make exposing light beam invest the optical projection apparatus of described element;
The part light that optionally makes light source and sent is invested optical projection apparatus, puts with the beam pattern makeup that forms described pattern beam array.
3, the maskless lithography system based on nano lens as claimed in claim 2 is characterized in that, described beam pattern makeup is put and comprised the microreflection lens array.
4, the maskless lithography system based on nano lens as claimed in claim 2 is characterized in that, described beam pattern makeup is put and comprised the liquid crystal micro array.
5, the maskless lithography system based on nano lens as claimed in claim 2, it is characterized in that, also comprise a control device, it puts formed patterned beam array according to the described beam pattern makeup of a photoengraving pattern Data Control, and drives described moveable platform to determine the exposure area of described element.
6, the maskless lithography system based on nano lens as claimed in claim 1, it is characterized in that, described nano lens comprises transparent substrates and is formed at suprabasil lighttight metal film, have a plurality of donuts on this metal film, in each annulus, from the inside radius r of n outside annulus of its center of circle
NiSatisfy: r
Ni=nr
0, r
0Be preset parameter, n=1,2 ..., the external radius of n annulus satisfies: r
No=r
Ni+ w, wherein w is a preset parameter.
7, the maskless lithography system based on nano lens as claimed in claim 6 is characterized in that, respectively this annulus runs through this metal film.
8, the maskless lithography system based on nano lens as claimed in claim 6 is characterized in that, respectively this annulus does not run through this metal film, and the thickness of metal film that is not run through is between 20nm～60nm.
9, as each described maskless lithography system of claim 6～8, it is characterized in that r based on nano lens
0Between 1～10 times lambda1-wavelength, w is less than lambda1-wavelength.
10, as each described maskless lithography system of claim 6～8, it is characterized in that n is between 1～6 based on nano lens.
11, as each described maskless lithography system based on nano lens of claim 6～8, it is characterized in that this metal film center has an aperture, this aperture is positioned at the center of circle of each donut.
12, the maskless lithography system based on nano lens as claimed in claim 1 is characterized in that, distance this nano lens and semiconductor chip is between 1～100 micron.
13, the maskless lithography system based on nano lens as claimed in claim 1, it is characterized in that, this nano lens comprises transparent substrates and is formed at suprabasil lighttight metal film, wherein, have the array that is formed by a plurality of apertures on this metal film, the breadth extreme of each aperture is w, and the center distance of adjacent aperture is d, wherein w satisfies: w≤2 times lambda1-wavelength, d is between 2w～10w.
14, the maskless lithography system based on nano lens as claimed in claim 15 is characterized in that, respectively this aperture be square hole, circular hole,, tri-angle-holed and diamond hole one of them.
15, the maskless lithography system based on nano lens as claimed in claim 15 is characterized in that, w is between 0.1 to 0.5 times of lambda1-wavelength.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101733669A CN101470346A (en) | 2007-12-27 | 2007-12-27 | Non-mask photo-etching system based on nano lens |
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| CNA2007101733669A CN101470346A (en) | 2007-12-27 | 2007-12-27 | Non-mask photo-etching system based on nano lens |
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| CN101470346A true CN101470346A (en) | 2009-07-01 |
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| CNA2007101733669A Pending CN101470346A (en) | 2007-12-27 | 2007-12-27 | Non-mask photo-etching system based on nano lens |
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Cited By (9)
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| CN102466976A (en) * | 2010-11-11 | 2012-05-23 | 上海微电子装备有限公司 | Illuminating system and illuminating method for lithography equipment |
| CN102478767A (en) * | 2010-11-30 | 2012-05-30 | 中国科学院微电子研究所 | Maskless photoetching device |
| CN102681061A (en) * | 2011-03-17 | 2012-09-19 | 中国科学院微电子研究所 | Diffractive optical element with focusing system |
| CN103091991A (en) * | 2011-10-31 | 2013-05-08 | 中国科学院微电子研究所 | Diffraction optical device for extreme ultraviolet lithography |
| CN103217874A (en) * | 2013-03-29 | 2013-07-24 | 中国科学院力学研究所 | Maskless photoetching system based on colloid microballoon nanometer lens |
| CN104090332A (en) * | 2014-07-10 | 2014-10-08 | 南京邮电大学 | Long-focus tight-focusing surface plasmonic lens under radially polarized beam |
| CN105637422A (en) * | 2013-08-16 | 2016-06-01 | Asml荷兰有限公司 | Lithographic apparatus, programmable patterning device and lithographic method |
| WO2020244190A1 (en) * | 2019-06-05 | 2020-12-10 | 广州方邦电子股份有限公司 | Electromagnetic scattering film, and electronic apparatus including electromagnetic scattering film |
| CN112355483A (en) * | 2020-10-30 | 2021-02-12 | 北京理工大学 | Method for preparing submicron concentric rings on silicon surface by femtosecond laser |
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- 2007-12-27 CN CNA2007101733669A patent/CN101470346A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102466976A (en) * | 2010-11-11 | 2012-05-23 | 上海微电子装备有限公司 | Illuminating system and illuminating method for lithography equipment |
| CN102478767A (en) * | 2010-11-30 | 2012-05-30 | 中国科学院微电子研究所 | Maskless photoetching device |
| CN102681061A (en) * | 2011-03-17 | 2012-09-19 | 中国科学院微电子研究所 | Diffractive optical element with focusing system |
| CN103091991A (en) * | 2011-10-31 | 2013-05-08 | 中国科学院微电子研究所 | Diffraction optical device for extreme ultraviolet lithography |
| CN103217874A (en) * | 2013-03-29 | 2013-07-24 | 中国科学院力学研究所 | Maskless photoetching system based on colloid microballoon nanometer lens |
| CN105637422A (en) * | 2013-08-16 | 2016-06-01 | Asml荷兰有限公司 | Lithographic apparatus, programmable patterning device and lithographic method |
| CN104090332A (en) * | 2014-07-10 | 2014-10-08 | 南京邮电大学 | Long-focus tight-focusing surface plasmonic lens under radially polarized beam |
| CN104090332B (en) * | 2014-07-10 | 2017-06-30 | 南京邮电大学 | Focal length, tightly focused surface phasmon lens under a kind of radial polarisation light |
| WO2020244190A1 (en) * | 2019-06-05 | 2020-12-10 | 广州方邦电子股份有限公司 | Electromagnetic scattering film, and electronic apparatus including electromagnetic scattering film |
| US11791560B2 (en) | 2019-06-05 | 2023-10-17 | Guangzhou Fangbang Electronics Co., Ltd | Electromagnetic scattering film and electronic device with electromagnetic scattering film |
| CN112355483A (en) * | 2020-10-30 | 2021-02-12 | 北京理工大学 | Method for preparing submicron concentric rings on silicon surface by femtosecond laser |
| CN112355483B (en) * | 2020-10-30 | 2021-08-24 | 北京理工大学 | Method for preparing submicron concentric rings on silicon surface by femtosecond laser |
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