CN102176488A - Photoelectric conversion device, manufacturing method thereof, and semiconductor device - Google Patents

Photoelectric conversion device, manufacturing method thereof, and semiconductor device Download PDF

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CN102176488A
CN102176488A CN2011100806692A CN201110080669A CN102176488A CN 102176488 A CN102176488 A CN 102176488A CN 2011100806692 A CN2011100806692 A CN 2011100806692A CN 201110080669 A CN201110080669 A CN 201110080669A CN 102176488 A CN102176488 A CN 102176488A
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semiconductor layer
electrode
semiconductor
substrate
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CN102176488B (en
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西和夫
菅原裕辅
高桥宽畅
荒尾达也
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Semiconductor Energy Laboratory Co Ltd
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    • H01L31/112Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
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    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
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Abstract

It is an object of the present invention to provide a photo-sensor having a structure which can suppress electrostatic discharge damage. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased and electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.

Description

Electrooptical device and manufacture method thereof and semiconductor device
The application be submitted on February 17th, 2006, application number is 200610009063.9, denomination of invention is divided an application for the patent application of " electrooptical device and manufacture method thereof and semiconductor device ".
Technical field
The present invention relates to electrooptical device, more specifically, relate to electrooptical device by utilizing thin-film semiconductor component to form, and the method for making electrooptical device.In addition, the present invention relates to utilize the electronic installation of electrooptical device.
Background technology
It is known being generally used for surveying electromagnetic a large amount of electrooptical device, for example, has ultraviolet ray to the electrooptical device of ultrared sensitivity is referred to as optical sensor usually.The optical sensor that has sensitivity in wavelength is the visible radiation zone of 400nm to 700nm is referred to as the optical sensor of visible light especially, and adopts the optical sensor that is used for visible light in a large number to be used for carrying out according to people's living environment the device of illumination adjustments or ON/OFF control.
Especially, in display unit, survey display unit brightness on every side to regulate display brightness.Because can reduce unnecessary electric power by surveying surrounding brightness and obtaining appropriate display brightness.Especially, this optical sensor that is used to regulate brightness is used for portable phone or personal computer (for example referring to Patent Document 1).
In addition, except surrounding brightness, also pass through the brightness of light sensor probes display, particularly backlight liquid crystal display, to regulate the brightness (for example referring to Patent Document 2 and 3) of display screen.
In addition, in utilizing the display of projecting apparatus, assemble adjusting by adopting optical sensor to carry out.Assembling adjusting is to regulate image so that the image of each color of RGB can not produce deviation.By utilizing optical sensor, survey the position of the image of each color, and image layout (is for example referred to Patent Document 4) in correct position.
Fig. 6 illustrates the structure of the conventional optical sensor that uses.In Fig. 6, on substrate 1001, form first transparency electrode 1002, and on first transparency electrode 1002, form p type semiconductor layer 1003, intrinsic semiconductor layer 1004 and n type semiconductor layer 1005 as photoelectric conversion layer.In addition, on n type semiconductor layer 1005, form second transparency electrode 1006.Then, form discontinuous insulating barrier 1007,, and in discontinuous insulating barrier 1007, form contact hole with covering transparent electrode 1002 and 1006.And, form and be connected in the second extraction electrode 1009 that first of first transparency electrode 1002 is extracted electrode 1008 and is connected in second transparency electrode 1006.
In the optical sensor shown in Figure 6,, there is the problem that resistance reduces, static discharge comparatively fast and possibly causes damage of electrostatic discharge owing to form transparency electrode 1002 and 1006.In addition, electric field concentrates on the end of p type semiconductor layer 1003, intrinsic semiconductor layer 1004 and n type semiconductor layer 1005 as photoelectric conversion layer, to such an extent as to can worry more likely to cause damage of electrostatic discharge.
In addition, owing on whole surface, form transparency electrode 1006 as the n type semiconductor layer 1005 on the upper strata of photoelectric conversion layer, and on whole surface, form transparency electrode 1006 as the p type semiconductor layer 1003 of the lower floor of photoelectric conversion layer, so can reduce the luminous intensity that incides photoelectric conversion layer.
[patent documentation 1] Japanese laid-open patent No.2003-60744
[patent documentation 2] Japan Patent No.3171808
[patent documentation 3] Japan Patent No.3193315
[patent documentation 4] Japanese laid-open patent No.2003-47017
Summary of the invention
Consider the problems referred to above, the purpose of this invention is to provide optical sensor with the structure that can suppress damage of electrostatic discharge.
In the present invention, in order to address the above problem, a feature of the present invention is: do not form the whole surperficial transparency electrode that overlaps with light receiving area.In addition, in the present invention, the p type semiconductor layer in the photoelectric conversion layer is used as an electrode, and the n type semiconductor layer is used as another electrode.When p type semiconductor layer and n type semiconductor layer during as electrode, resistance increases and can suppress damage of electrostatic discharge.
In addition, as the p type semiconductor layer of electrode and separated the opening in position of n type semiconductor layer, and therefore, resistance increases and can improve withstand voltage.
The present invention relates to a kind of electrooptical device, comprise being positioned on the substrate: photoelectric conversion layer, it has the 3rd semiconductor layer of the conductivity type opposite of a kind of first semiconductor layer, second semiconductor layer and conduction type of conduction type and first semiconductor layer; First electrode contacts with first semiconductor layer by the opening that is formed in the photoelectric conversion layer; Insulating barrier contacts the opening that forms and be provided with exposure the 3rd semiconductor layer with the 3rd semiconductor layer of photoelectric conversion layer; With second electrode, contact with the 3rd semiconductor layer by the opening that is formed in the insulating barrier; Wherein will remove at the 3rd semiconductor layer in the zone that is not covered by first electrode of photoelectric conversion layer, insulating barrier and second electrode.
In addition, the present invention relates to a kind of method that is used to make electrooptical device.The method that is used to make electrooptical device comprises the steps: at substrate, form photoelectric conversion layer, it has the 3rd semiconductor layer of the conductivity type opposite of a kind of first semiconductor layer, second semiconductor layer and conduction type of conduction type and first semiconductor layer; On photoelectric conversion layer, form first insulating barrier with first opening; In photoelectric conversion layer, form second opening; Form first electrode layer that contacts with first semiconductor layer by second opening; And second electrode that first opening contacts with the 3rd semiconductor layer of photoelectric conversion layer is passed through in formation; Wherein will do not removed by the 3rd semiconductor layer in the zone of first electrode, laminated second electrode covering of insulation.
The present invention relates to a kind of semiconductor device, comprise being positioned on the substrate: the circuit of the photo-electric conversion element and the signal processing of the output valve that is used for photo-electric conversion element.This photo-electric conversion element comprises: photoelectric conversion layer, and it has the 3rd semiconductor layer of the conductivity type opposite of a kind of first semiconductor layer, second semiconductor layer and conduction type of conduction type and first semiconductor layer; First electrode contacts with first semiconductor layer by the opening that is formed in the photoelectric conversion layer; Insulating barrier forms with the 3rd semiconductor layer of photoelectric conversion layer and contacts and be provided with the opening that exposes the 3rd semiconductor layer; With second electrode, contact with the 3rd semiconductor layer by the opening that is formed in the insulating barrier; Wherein will remove at the 3rd semiconductor layer in the zone that is not covered by first electrode of photoelectric conversion layer, insulating barrier and second electrode.This circuit comprises a plurality of thin-film transistors, and in these a plurality of thin-film transistors each has: the island semiconductor district that comprises source area, drain region and channel formation region; Gate insulating film; Gate electrode; Be electrically connected on the source electrode of source area; With the drain electrode that is electrically connected on the drain region.
This circuit is that amplifier circuit is to amplify the output valve of photo-electric conversion element.
The present invention relates to a kind of electrooptical device, comprise being positioned on the substrate: first electrode; Photoelectric conversion layer, it has the 3rd semiconductor film of the conductivity type opposite of a kind of first semiconductor film, second semiconductor film and conduction type of conduction type and first semiconductor film; Cover the dielectric film of first electrode and photoelectric conversion layer; Second electrode is formed on the dielectric film and with the part of first electrode and contacts; And third electrode, be formed on the dielectric film and and contact with the part of the 3rd semiconductor film; Wherein photoelectric conversion layer is overlapping with the part of first electrode and contact.
In the present invention, first electrode is a transparency electrode.
In the present invention, transparency electrode comprise indium oxide-tin oxide alloy, zinc oxide, tin oxide, the indium oxide that contains silicon or utilize wherein indium oxide and 2wt% or indium oxide-zinc oxide alloy that the above target that mixes to 20wt% or following zinc oxide forms in any.
In the present invention, first electrode is the shading conducting film.
In the present invention, the shading conducting film comprises: by the element that is selected from titanium, tungsten, tantalum, molybdenum, neodymium, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, platinum, aluminium, gold, silver or copper or contain the monofilm that this element constitutes as the alloy material or the compound-material of main component; Perhaps by its nitride, any one in the monofilm that constitutes such as titanium nitride, tungsten nitride, tantalum nitride or molybdenum nitride.
In the present invention, remove after the 3rd semiconductor layer, form second dielectric film,, form the first extraction electrode and second that is connected to first electrode layer and the second electrode lay and extract electrode by this opening with opening.
In the present invention, between the substrate and first semiconductor layer, form conducting film.
In the present invention, conducting film is a nesa coating.
In the present invention, between the substrate and first semiconductor layer, form colour filter.
In the present invention, each in source electrode and the drain electrode is a stack membrane.
In the present invention, form stack membrane by stacked titanium (Ti) film, aluminium (Al) film that contains minor amount of silicon (Si) and titanium (Ti) film.
In the present invention, each in source electrode and the drain electrode is a monofilm.
In the present invention, monofilm is served as reasons and is selected from the element of titanium (Ti), tungsten (W), tantalum (Ta), molybdenum (Mo), neodymium (Nd), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir) or platinum (Pt) or contains this element as the alloy material of main component or the monofilm of compound-material formation; Its nitride of perhaps serving as reasons, the monofilm that constitutes such as titanium nitride, tungsten nitride, tantalum nitride or molybdenum nitride.
The present invention relates to a kind of electrooptical device, comprise being positioned on the substrate: first electrode; Photoelectric conversion layer, it has the 3rd semiconductor film of the conductivity type opposite of a kind of first semiconductor film, second semiconductor film and conduction type of conduction type and first semiconductor film; Cover the dielectric film of first electrode and photoelectric conversion layer; Second electrode is formed on the dielectric film and with the part of first electrode and contacts; And third electrode, be formed on the dielectric film and and contact with the part of the 3rd semiconductor film; Wherein photoelectric conversion layer overlaps with the part of first electrode and contacts.
In the present invention, first electrode is a transparency electrode.
In the present invention, transparency electrode comprise indium oxide-tin oxide alloy, zinc oxide, tin oxide, the indium oxide that contains silicon or utilize indium oxide and 2wt% or indium oxide-zinc oxide alloy that the above target that mixes to 20wt% or following zinc oxide forms in any.
In the present invention, first electrode is the shading conducting film.
In the present invention, the shading conducting film comprises: by the element that is selected from titanium, tungsten, tantalum, molybdenum, neodymium, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, platinum, aluminium, gold, silver or copper or contain the monofilm that this element constitutes as the alloy material or the compound-material of main component; Perhaps any one in the monofilm that constitutes by its nitride (such as titanium nitride, tungsten nitride, tantalum nitride or molybdenum nitride).
In the present invention, substrate is a flexible substrate.
In the present invention, substrate is a glass substrate.
In the present invention, flexible substrate is (PEN) (PET) (PBN) a kind of in the film of film and poly-naphthalenedicarboxylic acid fourth diester (polybutylene naphthalate) of film, polyethylene terephthalate (polyethylene terephthalate) of Polyethylene Naphthalate (polyethylenenaphthalate).
According to the present invention, can make the optical sensor that suppresses damage of electrostatic discharge.In addition, can improve the reliability of the electronic installation that combines this optical sensor.
In addition, in optical sensor constructed in accordance, the light wavelength that is absorbed more approaches the sensitivity of human eye.
Read following detailed description in conjunction with the drawings, it is more apparent that these and other purposes, features and advantages of the present invention will become.
Description of drawings
Figure 1A and 1B are the views that illustrates according to the manufacturing step of optical sensor of the present invention.
Fig. 2 A to 2C is the view that illustrates according to the manufacturing step of optical sensor of the present invention.
Fig. 3 A to 3C is the view that illustrates according to the manufacturing step of optical sensor of the present invention.
Fig. 4 A and 4B are the views that illustrates according to the manufacturing step of optical sensor of the present invention.
Fig. 5 is the top view according to optical sensor of the present invention.
Fig. 6 is the cross-sectional view of conventional optical sensor.
Fig. 7 A and 7B are the views that illustrates according to the manufacturing step of optical sensor of the present invention.
Fig. 8 illustrates the view that is combined with according to an example of the electronic installation of optical sensor of the present invention.
Fig. 9 A and 9B illustrate the view that combines according to the example of the electronic installation of optical sensor of the present invention.
Figure 10 A and 10B illustrate the view that combines according to the example of the electronic installation of optical sensor of the present invention.
Figure 11 illustrates the view that combines according to an example of the electronic installation of optical sensor of the present invention.
Figure 12 is the top view according to optical sensor of the present invention.
Figure 13 A and 13B illustrate the view that wherein is equipped with according to the manufacturing step of the device of optical sensor of the present invention.
Figure 14 A and 14C illustrate the view that wherein is equipped with according to the manufacturing step of the device of optical sensor of the present invention.
Figure 15 A and 15C illustrate the view that wherein is equipped with according to the manufacturing step of the device of optical sensor of the present invention.
Figure 16 is the equivalent circuit diagram that combines according to the optical sensor that is used for visible light of optical sensor of the present invention.
Figure 17 is the equivalent circuit diagram that combines according to the optical sensor that is used for visible light of optical sensor of the present invention.
Figure 18 A and 18B are the views that illustrates according to the manufacturing step of optical sensor of the present invention.
Figure 19 A and 19B illustrate the view that combines according to an example of the electronic installation of optical sensor of the present invention.
Figure 20 A and 20D illustrate the view that wherein is equipped with according to the manufacturing step of the device of optical sensor of the present invention.
Figure 21 illustrates the view that wherein is equipped with according to the manufacturing step of the device of optical sensor of the present invention.
Embodiment
Embodiment
To present embodiment be described referring to figs. 1A to 1C, 2A to 2C and 3A to 3C.
At first, on substrate 101, for example form p type half amorphous semiconductor film as p N-type semiconductor N film 102.In the present embodiment, flexible substrate is as substrate 101, and more specifically, use is by the film of Polyethylene Naphthalate (PEN) formation.Except that poly-naphthoic acid second diester, can use the film that constitutes by polyethylene terephthalate (PET), poly-naphthalenedicarboxylic acid fourth diester (PBN) etc.In addition, can also use glass substrate.
By plasma CVD, form half amorphous silicon film contain such as the impurity element that belongs to 13 family's elements in the periodic table of elements of boron (B) as p N-type semiconductor N film 102.
Half amorphous semiconductor film comprises having at amorphous semiconductor and semiconductor with the intermediate structure between the crystal structure semiconductor of (comprising monocrystalline and polycrystalline).Half amorphous semiconductor has the 3rd stable under free energy condition, and it is the crystalline material that comprises shortrange order and distortion of lattice that is dispersed in the non-single crystal semiconductor film, and its crystallite dimension can be for 0.5 to 20nm.In half amorphous semiconductor film, Raman spectrum is transferred to and is lower than 520cm -1The wave number side, and in X-ray diffraction, observe allegedly the diffraction maximum of (111) and (220) that the lattice by Si causes.In addition, comprise the above hydrogen or halogen of at least 1 atom % with the interruption pending key.In this manual, for easy, above-mentioned semiconductor film is called half amorphous semiconductor film (SAS).In addition, contain rare gas element such as helium, argon, krypton or neon, so that enhanced stability and obtain half good amorphous semiconductor film with further promotion distortion of lattice.It should be noted that half amorphous semiconductor film also comprises micro-crystallization semiconductor film (microcrystalline semiconductor film).
Can decompose and obtain the SAS film by silicon-containing gas being carried out glow discharge.SiH 4Be used as and contain the representative gases of silicon, and in addition, can also use Si 2H 6, SiH 2Cl 2, SiHCl 3, SiCl 4, SiF 4Deng.One or more the gas that can utilize hydrogen or add in inert gas elements helium, argon, krypton and the neon to hydrogen dilutes the gas that contains silicon, with easy formation SAS film.Preferably, dilute the gas that contains silicon according to 2 times to 1000 times dilution factor scope.And, can in containing the gas of silicon, mix such as CH 4Or C 2H 6Carbide gas, such as GeH 4Germanide gas or GeF 4, F 2, bandwidth is adjusted to 1.5 to 2.4eV or 0.9 to 1.1eV.
After forming p N-type semiconductor N film 102, form semiconductor film 103 (intrinsic semiconductor film) and the n N-type semiconductor N film 104 (Figure 1A) that does not comprise the impurity that conduction type is provided successively.Therefore form the photoelectric conversion layer that comprises p N-type semiconductor N film 102, intrinsic semiconductor film (also being referred to as i N-type semiconductor N film) 103 and n N-type semiconductor N film 104.
For example, can form half amorphous silicon film as intrinsic semiconductor film 103 by plasma CVD.In addition,, can form half amorphous silicon film that contains the impurity element (such as phosphorus (P)) that belongs to 15 families in the periodic table of elements, perhaps after forming half amorphous silicon film, introduce the impurity element that belongs to 15 families in the periodic table of elements as n N-type semiconductor N film 104.Amount that it should be noted that control impurity is so that the conductivity of p type half amorphous semiconductor film 102 and n type half amorphous semiconductor film 104 is 1S/cm.
In addition, half amorphous semiconductor film not only, amorphous semiconductor film also can be used as p N-type semiconductor N film 102, intrinsic semiconductor film 103 and n N-type semiconductor N film 104.
In the present embodiment, according to the sequential cascade of p N-type semiconductor N film, intrinsic semiconductor film and n N-type semiconductor N film.Yet p N-type semiconductor N film and n N-type semiconductor N film can be according to opposite sequential cascades, that is, and and according to the sequential cascade of n N-type semiconductor N film, intrinsic semiconductor film and p N-type semiconductor N film.
Subsequently, on n N-type semiconductor N film 104, form dielectric film 106 (Figure 1B) by silk screen printing etc. with groove 108.Groove 108 contacts with n N-type semiconductor N film 104.Then, in dielectric film 106, n N-type semiconductor N film 104, intrinsic semiconductor film 103 and p N-type semiconductor N film 102, form groove 107 (Fig. 2 A) by laser scribing.Groove 107 is formed in p N-type semiconductor N film 102, intrinsic semiconductor film 103 and the n N-type semiconductor N film 104, and contacts with p N-type semiconductor N film 104.In addition, the width of groove 107 is 50 μ m to 300 μ m.
After forming groove 107, spray by China ink and to utilize conducting resinl to form electrode layer 110 and 111 (Fig. 2 B).Can use and contain such as the conducting resinl of the metal material of silver (Ag), gold (Au), copper (Cu) or nickel (Ni) or conduction carbon paste as conducting resinl.In addition, can form electrode layer 110 and 111 by silk screen printing.
Then, by utilize electrode layer 110 and 111 and dielectric film 106 carry out etching (Fig. 2 C) as mask.By this etching, the part of the part of n N-type semiconductor N film 104, the part of intrinsic semiconductor film 103 and dielectric film 106 is etched to form opening 120.This process is removed n N-type semiconductor N film 104, and exposes the part of intrinsic semiconductor film 103.Therefore, n N-type semiconductor N film 104 separates so that electrode layer 110 and 111 not short circuits with electrode layer 110 electricity.
Subsequently, form dielectric film 112, the intrinsic semiconductor film 103 and the p N-type semiconductor N film 102 (Fig. 3 A) that are exposed with covers electrode layer 110 and 111, dielectric film 106, n N-type semiconductor N film 104, by etching.In addition, come in dielectric film 112, to form groove 121 and 122 (Fig. 3 B) by laser scribing once more, and utilize conducting resinl to form and extract electrode 113 and 114 (Fig. 3 C).This conducting resinl can use and form electrode layer 110 and 111 o'clock identical materials.
As mentioned above, formed a unit of optical sensor.Optical sensor about manufacturing in the present embodiment, do not need to form transparency electrode, because in p N-type semiconductor N film 102, intrinsic semiconductor film 103 and n N-type semiconductor N film 104 as photoelectric conversion layer, p N-type semiconductor N film 102 and n N-type semiconductor N film 104 are basically as electrode.
In addition, in optical sensor according to the present invention, the zone 116 that electrode layer 110 can be contacted with p N-type semiconductor N film 102 keeps certain distance with the zone 117 that electrode layer 111 contacts with n N-type semiconductor N film 104.Electric current is flowed through and is extracted electrode 113, electrode layer 110, p N-type semiconductor N film 102, intrinsic semiconductor film 103, n N-type semiconductor N film 104, electrode layer 111 and extract electrode 114.As mentioned above, owing to separate with the zone that n N-type semiconductor N film 104 contacts with electrode layer 111 in the zone that electrode layer 110 is contacted with p N-type semiconductor N film 102,, and can improve the withstand voltage of damage of electrostatic discharge on the position so electric field is concentrated.
Figure 12 is the top view of the optical sensor of Fig. 3 C.It should be noted that dielectric film 112 is not shown.When the distance between electrode layer 110 and 111 is called X 1(μ m) is then at X 1Resistance increases when big.Therefore, consider that the resistance value of whole element and damage of electrostatic discharge are withstand voltage, need to determine X 1In other words, work as X 1Too hour, resistance reduces, and damage of electrostatic discharge is withstand voltage also reduces.On the other hand, work as X 1When too big, it is too many that the resistance of whole element increases ground, and it can't be used as element.
According to the present invention, can make the repressed optical sensor of damage of electrostatic discharge, therefore, can obtain to be combined with the high reliability product of this optical sensor.
In addition, can use the semiconductor film that is used for photoelectric conversion layer to come as electrode, thus, the thickness of optical sensor is thinner than routine.
In addition, form the conventional transparency electrode that forms, and the semiconductor film that is used for photoelectric conversion layer comes as electrode, therefore, can be so that approach the sensitivity of human eye according to the light wavelength of optical sensor absorption of the present invention.
Example 1
In this example, description is combined with the example of the various electronic installations of the optical sensor that obtains by the present invention.As using electronic installation of the present invention, provide computer, display, portable phone, television set etc.Instantiation at these electronic installations shown in Fig. 8,9A and 9B, 10A and 10B and 11 and 19.
Fig. 8 illustrates a kind of portable phone, and it comprises main body (A) 601, main body (B) 602, casing 603, operation keys 604, sound importation 605, voice output part 606, circuit substrate 607, display floater (A) 608, display floater (B) 609, hinge 610, light transmissive material part 611 and optical sensor 612.The present invention can be applied to optical sensor 612.
Optical sensor 612 is surveyed the light of transmission by light transmissive material part 611, and control the brightness of display floater (A) 608 and display floater (B) 609, or the illumination that comes control operation key 604 based on the brightness that obtains by optical sensor 612 according to the ambient light of being surveyed.The current drain that so, can suppress portable phone.
Fig. 9 A and 9B illustrate another example of portable phone.In Fig. 9 A and 9B, reference marker 621 expression main bodys; 622, casing; 623, display floater; 624, operation keys; 625, the voice output part; 626, the sound importation; And 627 and 628, the optical sensor part.
In the portable phone shown in Fig. 9 A, can survey ambient light by the optical sensor part 627 that utilization is arranged in the main body 621, control the brightness of display floater 623 and operation keys 624.
In addition, in the portable phone shown in Fig. 9 B, except that the structure of Fig. 9 A, optical sensor part 628 is set in the inboard of main body 621.By optical sensor part 628, can also survey the brightness backlight that in display floater 623, is provided.
Figure 10 A illustrates a computer, and it comprises main body 631, casing 632, display part 633, keyboard 634, external connection port 635, gives directions formula mouse 636 etc.
In addition, Figure 10 B illustrates the display unit such as television set.This display unit comprises casing 641, supporter 642, display part 643 etc.
The detailed structure of the display part 633 of the computer shown in Figure 10 A of use display panels shown in Figure 11 and the display part 643 of the display unit shown in Figure 10 B.
Display panels 662 shown in Figure 11 is installed in the casing 661, and comprise substrate 651a and 651b, be inserted in liquid crystal layer 652, polarization filter 653a and 653b between substrate 651a and the 651b, backlight 654 etc.In addition, in casing 661, form optical sensor part 655.
By utilizing optical sensor part 655 that the present invention makes to survey amount from backlight 654 light, and feedback information is with the brightness of regulator solution crystal panel 662.
In the example shown in Figure 19 A and the 19B, optical sensor according to the present invention is attached in the camera, for example digital camera.Figure 19 A is the perspective view of digital camera front side; And Figure 19 B is the perspective view of its rear side.In Figure 19 A, digital camera is provided with release-push 1301, main switch 1302, view finder 1303, photoflash lamp part 1304, camera lens 1305, barrel 1306 and casing 1307.
In addition, in Figure 19 B, digital camera is provided with eyepiece frame 1311, display 1312 and action button 1313.
When release button 1301 was pressed downwardly onto the least bit, mechanical device work was regulated in focus adjustment mechanical device and exposure, and when release-push was pressed downwardly onto minimum point, shutter was opened.
By to pressing down or revolving hero of biography switch 1302, open or close the power supply of digital camera.
View finder 1303 is the device in the upper position that is in lens 1305, and it is used for checking coverage and focus from the eyepiece frame shown in Figure 19 B 1311 in the front of digital camera.
Photoflash lamp part 1304 is positioned at the top of digital camera front, when the luminance shortage of object, is depressed and shutter is therefrom launched fill-in light when being opened at locking key.
Camera lens 1305 is positioned at the front of digital camera, and by utilizing formation such as condenser lens, zoom lens.Camera lens and shutter and the aperture that does not illustrate form camera optical system.In addition, behind camera lens, the imageing sensor such as CCD (charge coupled device) is set.
The position of barrel 1306 moving lens is to regulate the focal length of condenser lens, zoom lens etc.When taking, barrel skids off to move forward camera lens 1305.In addition, when carrying camera, camera lens 1305 is moved backward so that its compactness.It should be noted that, adopt in the present embodiment and can come the structure of zoom by skidding off barrel with photographic subjects, yet this structure is not limited thereto, and can adopt because the structure of camera optical systems and do not need to come the structure of zoom to take by skidding off barrel in the casing 1307.
Eyepiece frame 1311 is arranged in the upper position at the digital camera back side, is used for browsing when checking coverage and focus.
Action button 1313 forms by button, menu button, the Show Button, function button, selector button etc. are set for being used for the button of various functions on the dorsal part that is arranged on digital camera.
When will optical sensor according to the present invention being attached in the camera shown in Figure 19 A and the 19B, whether light sensor probes exists light and luminous intensity, thus, can carry out the exposure adjusting of camera etc.
In addition, optical sensor according to the present invention can be applied in other electronic installation such as projection TV and navigation system.In other words, it can be applied to any need detection in the electronic installation of light.
Example 2
In this example, will the example that auxiliary electrode is provided be described with reference to figure 4A and 4B and 5.
In Fig. 4 A, reference marker 201 expression substrates; 203, p N-type semiconductor N film; 205, intrinsic semiconductor film; 206, n N-type semiconductor N film.In addition, 207 and 208 expression electrode layers; 209 and 210, dielectric film; And 211 and 212, extract electrode.
This example has the structure that also is provided with auxiliary electrode 204 except that the structure of embodiment.Can form auxiliary electrode 204 by utilizing conducting film.In this example, nesa coating is as conducting film, and use contains the indium oxide-tin oxide alloy (also being called the indium tin oxide that contains Si) of silicon (Si) as transparent conductive material.Except that the indium oxide that contains Si-tin oxide alloy, can also use zinc oxide (ZnO), tin oxide (SnO 2), indium oxide, the conducting membrane material that forms by the target that uses indium oxide further to mix with 2 to 20wt% zinc oxide (ZnO).
When the area of optical receiving region keeps sufficient, can form auxiliary electrode 204 by the conducting film that utilizes nontransparent conducting film.As this conducting film, can use by the element that is selected from titanium (Ti), tungsten (W), tantalum (Ta), molybdenum (Mo), neodymium (Nd), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), platinum (Pt), aluminium (Al), gold (Au), silver (Ag) or copper (Cu) or contain the monofilm that this element constitutes as the alloy material and the compound-material of main component; Perhaps use by its nitride, such as the monofilm of titanium nitride, tungsten nitride, tantalum nitride or molybdenum nitride formation.
When forming auxiliary electrode 204, though the resistance of whole element reduces, the advantage that exists is: by forming the auxiliary electrode 204 that contacts with p N-type semiconductor N film 203, the resistance of p N-type semiconductor N film 203 and n N-type semiconductor N film 206 can be identical.
In addition, as shown in Fig. 4 B, under the situation of utilizing auxiliary electrode 204,, can carry out etching as etch stopper by utilizing auxiliary electrode 204 when etching intrinsic semiconductor film 205 during with separate mesh electrode layer 207 and 208.Therefore can etching intrinsic semiconductor film 205 up to exposing auxiliary electrode 204.
Fig. 5 is the top view of the optical sensor of Fig. 4 B.Note, more clear in order to make accompanying drawing, use region representation dielectric film 209 by dotted line, and not shown dielectric film 210.In addition, groove 221 and 222 grooves 107 and 108 corresponding to Fig. 1 C.
When the distance between auxiliary electrode 204 and the electrode layer 208 is called X 2(μ m) then works as X 2Resistance increases when big.Therefore, consider that the resistance value of whole element and damage of electrostatic discharge are withstand voltage, need to determine X 2In other words, work as X 2Too hour, resistance reduces, and damage of electrostatic discharge is withstand voltage also to be reduced.On the other hand, work as X 2When too big, the resistance of whole element is too big, and it can't be used as element.
In addition, this example can be applied in any explanation of embodiment and example 1.
Example 3
In this example, will be described in according to the example that forms colour filter in the optical sensor of the present invention with reference to figure 7A and 7B.
Fig. 7 A is illustrated in the optical sensor that forms colour filter in the optical sensor of Fig. 2 C.In the optical sensor of Fig. 7 A, form substrate 301, p N-type semiconductor N film 302, intrinsic semiconductor film 303, n N-type semiconductor N film 304, dielectric film 305, electrode layer 306 and 307, dielectric film 308, extract electrode 309 and 310 and colour filter 311.
By colour filter 311 is provided, can selectivity absorb each light in red (R), green (G) and the indigo plant (B).
In addition, Fig. 7 B is illustrated in the example that forms colour filter between substrate and the photoelectric conversion layer.
In Fig. 7 B, reference marker 321 expression substrates; 322, p N-type semiconductor N film; 323, intrinsic semiconductor film; 324, n N-type semiconductor N film; 325 and 328, dielectric film; 326 and 327, electrode layer; 329 and 330, extract electrode; 331, colour filter; And 332, passivating film.Can form passivating film 332 by utilizing with dielectric film 325 identical materials.
In the structure shown in Fig. 7 B, even work as light from the substrate side oblique incidence, this light also can see through colour filter, thus, can use incident light effectively.
In addition, this example can be applied in any explanation in embodiment and example 1 and 2.
Example 4
In this example, will the semiconductor device of utilization according to electrooptical device of the present invention be described with reference to figure 13A and 13B, 14A and 14B, 15A to 15C, 16,17 and 20A to 20D.
In Figure 13 A,, the example of the optical sensor chip (2.0mmX1.5mm) that is used for visible light with two-terminal is shown as the semiconductor device that utilizes according to electrooptical device of the present invention.In Figure 13 A, reference marker 710 expression substrates; 712, underlying insulation film; With 713, gate insulating film.Because the light transmission substrate 710, underlying insulation film 712 and the gate insulating film 713 that are received are so all expect to use high light transmissive material for them.
Can form PIN type photo-electric conversion element 725 according to the explanation of embodiment, and this example illustrates its brief description.Photo-electric conversion element 725 according to this example comprises: wiring 719, guard electrode 718, p type semiconductor layer 721p, n type semiconductor layer 721n, be inserted in intrinsic (i type) semiconductor layer 721I (they are as photoelectric conversion layer 725) and terminal electrode 726 between p type semiconductor layer 721p and the n type semiconductor layer 721n.
Wiring 719 has the laminated construction of refractory metal film and low resistive metal film (such as aluminium alloy or fine aluminium).Here, wiring 719 has three-decker, wherein stacks gradually titanium film (Ti film), aluminium film (Al film) and Ti film.Form guard electrode 718 to cover wiring 719.
When etching photoelectric conversion layer 721, by the guard electrode 718 protection wirings 719 that cover wiring 719.The material that is used for guard electrode 718 is preferably such electric conducting material, and with respect to the etching gas that is used for photoelectric conversion layer 721 (or etchant), its etch-rate is lower than the rate of etch of photoelectric conversion layer.In addition, the material that is used for guard electrode 718 is not preferably the electric conducting material with photoelectric conversion layer 721 reactions becoming alloy.
In addition, be provided for the circuit of signal processing of the output valve of PIN type photo-electric conversion element 725.In this example, provide the circuit of amplifier circuit as the signal processing of the output valve that is used for PIN type photo-electric conversion element 725.Forms the amplifier circuit (Figure 13 A) that is arranged on the same substrate in order to the output valve of amplification photo-electric conversion element 725 by the current mirroring circuit 732 that constitutes by n channel thin-film transistor (thin-film transistor (TFT)) 730 and 731.
In addition, at the equivalent circuit diagram that has the visible light sensor of two terminals shown in Figure 13 B.Figure 13 B is the equivalent circuit diagram that utilizes the n channel TFT; Yet, can only use the p channel TFT to replace the n channel TFT.
At two TFT shown in Figure 13 A.Yet, for example, for output valve being increased to five times, can provide 2 n channel TFT 730 (channel length (L) and channel width (W) are respectively 8 μ m and 50 μ m) and 10 n channel TFT 731 (channel length (L) and channel width (W) are respectively 8 μ m and 50 μ m).
In addition, in order output valve to be increased to m doubly, can provide a n channel TFT 730 and m n channel TFT 731.Especially, in Figure 16, illustrate for output valve being increased to 100 times and the example of a n channel TFT 730 and 100 n channel TFT 731 is provided.It should be noted that with Figure 13 A and 13B and 14A to 14C in identical reference marker be used for the same section of Figure 16.In Figure 16, n channel TFT 731 comprises 100 n channel TFT 731a, 731b, 731c, 731d.......So, the photoelectric current that produces in photo-electric conversion element 725 is exaggerated 100 times and be output.
Figure 17 is the equivalent circuit diagram under the situation of utilizing p channel TFT formation amplifier circuit.In Figure 17, terminal electrode 726 with 753 with Figure 13 B in identical, it can be connected respectively to photo-electric conversion element 825 and p channel TFT 830 and 831.P channel TFT 830 is electrically connected to the electrode on photo-electric conversion element 825 anode-side.In photo-electric conversion element 825, n type semiconductor layer, intrinsic semiconductor layer (i type semiconductor layer) and p type semiconductor layer are being connected on second electrode of p channel TFT 830 (electrode on the anode-side) according to this sequential cascade; And then, form first electrode (electrode on the cathode side).In addition, can also use photo-electric conversion element with inversed stack order, wherein with p type semiconductor layer, intrinsic semiconductor layer (i type semiconductor layer) and n type semiconductor layer according to this sequential cascade on first electrode (electrode on the cathode side); And then, form second electrode (electrode on the anode-side) that is connected in p channel TFT 830, and can form terminal electrode at the cathode side that is connected in first electrode.
Can form the amplifier circuit of further amplification output valve by utilizing the operational amplifier that wherein suitably makes up n channel TFT and p channel TFT; Yet this amplifier circuit has 5 terminals.Meanwhile, can reduce the quantity of power supply, and, forming this amplifier circuit by utilizing operational amplifier and level shifter, this amplifier circuit has four terminals.
It should be noted that and form the amplifier circuit that amplifies output valve in this example; Yet, if desired, can also make to be used for the circuit that output valve is converted to another output form waited and replace amplifier circuit.
In addition, in Figure 13 A, show the example that n channel TFT 730 and 731 wherein comprises the top grid TFT of a channel formation region (being called " single grid structure " in this manual); Yet, can also adopt the structure that comprises a plurality of channel formation regions to reduce the variation of conducting current value.In addition, n channel TFT 730 and 731 can be provided with low concentration drain electrode (lightly doped drain (LDD)) district to reduce the cut-off current value.The LDD district is the zone of mixing impurity element with low concentration between the source area that mixes impurity element at channel formation region and with high concentration and form or the drain region.When the LDD district was provided, favourable effect was: alleviated near the electric field in drain region, prevented thus because hot carrier is injected the degeneration that causes.In addition, in order to prevent because the degeneration of the conducting electric current that causes of hot carrier, n channel TFT 730 and 731 can be such structure: in gate electrode superimposed layer LDD district, gate insulating film (being called in this manual, " GOLD (grid leak overlapping LDD) structure ") is inserted in therebetween.
Under the situation of utilizing the GOLD structure, do not compare with the LDD district with the situation of gate electrode crossover, alleviate near the electric field in drain region and prevent that thus the advantageous effects of injecting the degeneration that causes owing to hot carrier from being strengthened.In order to prevent the video picture of degenerating, adopted this GOLD structure effectively, because alleviated near the electric field strength the drain region, prevent the hot carrier injection thus.
In addition, wiring 714 for the top of channel formation region of TFT 730 that is connected in wiring 719 and extends to amplifier circuit with as the wiring of gate electrode.
In addition, wiring 715 is for being connected in n type semiconductor layer 721n and further being connected in the drain electrode wiring (being also referred to as drain electrode) of TFT 731 or the wiring of source wiring (being also referred to as the source electrode).In addition, reference marker 716 and 717 expression dielectric films; With 720, the expression connection electrode.Because the light that is received penetrates dielectric film 716 and 717, so all expect to use high light transmissive material for them.The silicon oxide film (SiOx film) that forms by CVD is preferred for dielectric film 717.When the silicon oxide film that forms by CVD is used for dielectric film 717, improved anchoring strength (anchoringintensity).
In addition, with wiring 714 and 715 identical steps in form terminal electrode 750, and in the step identical, form terminal electrode 751 with wiring 719 and 720.
In addition, terminal electrode 726 is connected in n type semiconductor layer 721n, and utilizes scolder 764 to be installed on the electrode 761 of printed wiring board 760.In addition, in the step identical, form terminal electrode 753, and utilize scolder 763 that it is installed on the electrode 762 of printed wiring board 760 with terminal electrode 726.
Hereinafter, will the manufacturing step that obtain said structure be described with reference to figure 14A to 14C and 20A to 20D.
At first, go up the formation element at substrate (first substrate 710).Here, the AN100 as one of glass substrate is used as substrate 710.
Subsequently, form the silicon oxide film that contains nitrogen that is used as underlying insulation film 712 by plasma CVD, and the stacked thereon semiconductor film such as the amorphous silicon film that contains hydrogen (54nm is thick), and be not exposed in the atmosphere.The silicon oxide film of in addition, can stacked silicon oxide film, silicon nitride film and containing nitrogen is to form underlying insulation film 712.Especially, the silicon nitride film that contains aerobic that can stacked 50nm, the silicon oxide film that contains nitrogen of 100nm are to form underlying insulation film 712.It should be noted that the silicon oxide film or the silicon nitride film that contain nitrogen prevent such as the barrier layer of alkali-metal impurity from the glass substrate diffusion with acting on.
Then, by utilizing technique known (such as solid state growth method, laser crystallization method or utilize the crystallization method of catalyst metals) to make the amorphous silicon film crystallization, have the semiconductor film (crystal semiconductor film) of crystal structure, for example polysilicon film with formation.Here, obtain polysilicon film by the crystallization method that utilizes catalyst elements.Apply the nickel acetate solution of the nickel that contains 10ppm weight by glue spreader (spinner).It should be noted that and to replace coating that nickel element is distributed on the whole surface by sputter.Then, heat-treat and be used for crystallization has crystal structure with formation semiconductor film (being polysilicon film) here.Here, by obtaining polysilicon film in this heat treatment (at 550 ℃ of next ones hour) heat treatment that is used for crystallization (following four hours) afterwards at 550 ℃.
Then, the hydrofluoric acid by dilution waits and removes the lip-deep oxidation film of polysilicon film.In atmosphere or oxygen atmosphere under carry out be used for raise degree of crystallinity and repair laser (wavelength of the XeCl:308nm) radiation of defective that crystal grain stay thereafter.
With wavelength is that the second harmonic or the triple-frequency harmonics of 400nm or littler excimer laser or YAG laser comes as this laser.Here, adopt and to have the pulse laser that is approximately 10 to 1000Hz repetition rate.By optical system with laser convergence to 100 to 500mJ/cm 2, and carry out radiation with 90 to 95% overlapping rate, scan the silicon fiml surface thus.In this example, under atmosphere with repetition rate and the 470mJ/cm of 30Hz 2Energy density carry out laser emission.
It should be noted that because carry out radiation, so laser emission forms oxidation film from the teeth outwards at atmosphere or under oxygen atmosphere.Though the example that utilizes pulse laser is shown in this example, also can uses continuous wave laser.For the crystallization of semiconductor film, preferably by utilize secondary that the continuous wave solid-state laser applies first-harmonic to four-time harmonic so that obtain the crystal of big crystallite dimension.As typical example, can adopt Nd:YVO 4The second harmonic (532nm) of laser (first-harmonic of 1064nm) or triple-frequency harmonics (355nm).
Utilizing under the situation of continuous-wave laser, will be by nonlinear optical element from the continuous-wave mode YVO of 10W output 4The laser that laser is launched changes into harmonic wave.In addition, can also provide by with YVO 4Crystal and nonlinear optical element are put into the method that resonant cavity is launched harmonic wave.Then, preferably come on raying face, to form rectangle or oval-shaped laser, and utilize this laser emission target by optical system.At this moment, need approximate 0.01 to 100MW/cm 2(preferred, 0.1-10MW/cm 2) energy density.Semiconductor film can move so that by radiation with approximate 10 to 2000cm/s speed with respect to laser.
Then, except that the oxidation film that forms by laser emission, also by utilizing the Ozone Water treatment surface to form the barrier layer of making in 120 seconds by the oxidation film of gross thickness 1 to 5nm.Form the barrier layer so that from film, remove the catalyst elements of adding, such as nickel (Ni) for crystallization.Though utilize Ozone Water to form the barrier layer here, but can also adopt the UV x radiation x and oxidation has the method or utilize on surface of the semiconductor film of crystal structure and adopts oxygen plasma treatment, plasma CVD, sputter, evaporation to wait oxidation to have the method on surface of the semiconductor film of crystal structure under oxygen atmosphere by utilizing, the oxidation film of deposit thickness approximate 1 to 10nm forms this barrier layer.In addition, before forming the barrier layer, can remove the oxidation film that forms by laser emission.
Then, on the barrier layer, it is thick that the amorphous silicon film that will contain the argon element by sputter is formed up to 10nm to 400nm, and for example 100nm is thick here, with as air-breathing position.Here, containing the amorphous silicon film that utilizes silicon target formation to contain the argon element under the atmosphere of argon.When using plasma CVD to form the amorphous silicon film that contains the argon element, sedimentary condition is as follows: with monosilane and argon (SiH 4: flow-rate ratio Ar) is set to 1: 99; Deposition pressure is set to 6.665Pa; The RF power density is set to 0.087W/cm 2Depositing temperature is set to 350 ℃.
Adopt the heating furnace be heated to 650 ℃ come heat treatment three minute to remove catalyst elements (air-breathing) thereafter.Handle by this, reduced to have the concentration of the catalyst elements in the semiconductor film of crystal structure.Can also adopt the lamp annealing device to replace heating furnace.
Subsequently, utilize the barrier layer to come selectivity to remove to contain amorphous silicon film, and then, select to remove the barrier layer by the hydrofluoric acid of dilution as the argon element of air-breathing position as etch stopper.Trend that it should be noted that existence is that nickel moves to the zone with hyperoxia concentration probably in breathing process, and thus, it is desirable to remove the barrier layer of being made by oxidation film after air-breathing.
It should be noted that and do not utilizing catalyst elements to come under the situation of crystal semiconductor film, need be such as forming the barrier layer, form air-breathing position, be used for air-breathing heat treatment, remove the above-mentioned steps of air-breathing position.
Then, after forming thin-oxide film on the surface of the semiconductor film that utilizes Ozone Water being obtained with crystal structure, by utilizing first photomask to form the mask of making by resist, and carry out etch processes to obtain the shape of expectation, form the semiconductor film 741 and 742 (being called " island semiconductor district " in this manual) (with reference to figure 20A) that is separated into island shape thus.After island semiconductor district 741 and 742 forms, remove the mask of making by resist.
Subsequently, if desired, carry out mixing of very small amount of impurity element (boron or phosphorus) to control the threshold value of TFT.Here, adopt ion doping, wherein not with diborane (B 2H 6) separate by quality but excite with gas ions.
Then, adopt the etchant that comprises hydrofluoric acid to remove oxidation film, and clean the surface in island semiconductor district simultaneously.Form as gate insulating film 713 contain silicon dielectric film as main component thereafter.Here, by plasma CVD form the silicon oxide film that contains nitrogen that thickness is 115nm (composition ratio: Si=32%, O=59%, N=7%, H=2%).
Then, on gate insulating film 713, form after the metal film, use second photomask to form gate electrode 744 and 745, wiring 714 and 715 and terminal electrode 750 (with reference to figure 20B).For example, use film that tantalum nitride (TaN) and tungsten (W) by stacked 30nm of being respectively and 370nm forms as metal film.
Except that above-mentioned material, can use by the element that is selected from titanium (Ti), tungsten (W), tantalum (Ta), molybdenum (Mo), neodymium (Nd), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir) or platinum (Pt), aluminium (Al), gold (Au), silver (Ag) or copper (Cu) or contain the monofilm that this element constitutes as the alloy material or the compound-material of main component; Perhaps use the monofilm that constitutes by its nitride such as titanium nitride, tungsten nitride, tantalum nitride or molybdenum nitride, as gate electrode 744 and 745, wiring 714 and 715 and terminal electrode 750.
Then, mixed in island semiconductor district 741 and 742, with the source area of formation TFT 730 or source area or drain region 748 (with reference to the figure 20C) of drain region 747 and TFT 731.In addition, in the island semiconductor district 741 of TFT 730, between source area and drain region, form channel formation region, and then in the island semiconductor district 742 of TFT 731, between source area and drain region, form channel formation region.
Subsequently, after forming first interlayer dielectric that contains the silicon oxide film (not shown) of 50nm, carry out the step of the activation processing of the impurity element that each island semiconductor district is added by CVD.By the rapid thermal annealing (RTA method) that utilizes lamp source, YAG laser or excimer laser are utilized the heat treatment of heating furnace or the combined method of preceding method from the method for dorsal part radiation, carry out this activation step.
Then, form thickness and be for example second interlayer dielectric 716 that comprises the silicon nitride film that contains hydrogen and oxygen of 10nm.
Subsequently, on second interlayer dielectric 716, form the 3rd interlayer dielectric 717 (with reference to figure 20D) that constitutes by insulating material.Can utilize the dielectric film that obtains by CVD as the 3rd interlayer dielectric 717.In this example, in order to improve adhesiveness, the silicon oxide film that comprises nitrogen that forms thickness and be 900nm is as the 3rd interlayer dielectric 717.
Then, heat-treat (in blanket of nitrogen 300 to 550 ℃ of heat treatments 1 to 12 hours, for example, handled 1 hour), with the hydrogenation island semiconductor film at 410 ℃.Carrying out this step is included in hydrogen in second interlayer dielectric 716 with use and stops dangling bonds in the island semiconductor film.Can the hydrogenation island semiconductor film and no matter whether form gate insulating film 713.
In addition, can also use the dielectric film that utilizes siloxanes and laminated construction thereof as the 3rd interlayer dielectric 717.Siloxanes is made up of the skeleton structure of the key formation of silicon (Si) and oxygen (O).As substituting group, can use the compound that contains hydrogen (such as alkyl or aromatic hydrocarbons) at least.Can also use fluorine as substituting group.And, can use the compound thing instead that contains hydrogen and fluorine at least.
When the dielectric film that will utilize siloxanes is used as the 3rd interlayer dielectric 717 with its laminated construction, after forming second interlayer dielectric 716, can makes the heat treatment of island semiconductor film hydrogenation, and then, can form the 3rd interlayer dielectric 717.
Then, form the mask of making by resist by utilizing the 3rd photomask, and selective etch first interlayer dielectric, second interlayer dielectric 716 and the 3rd interlayer dielectric 717 and gate insulating film 713, to form contact hole.Then, remove the mask of making by resist.
It should be noted that and to form the 3rd interlayer dielectric 717 if desired.When not forming the 3rd interlayer dielectric 717, after forming second interlayer dielectric 716, selective etch first interlayer dielectric, second interlayer dielectric 716 and gate insulating film 713 are to form contact hole.
Subsequently, after forming metal laminated film by sputter, by utilizing the 4th photomask to form the mask of making by resist, and then, the selective etch metal film is to form wiring 719, connection electrode 720, terminal electrode 751, the source electrode of TFT 730 or source electrode or the drain electrode 772 of drain electrode 771 and TFT731.Then, remove the mask of making by resist.It should be noted that metal laminated film according to this example has the three layer laminate structures that the Ti film by the Al film that contains a small amount of Si of the Ti film of 100nm, 350nm and 100nm constitutes.
In above-mentioned steps, can utilize polysilicon film to make top grid TFT 730 and 731.
Then; at the conductive metal film (such as titanium (Ti) or molybdenum (Mo)) that forms photoelectric conversion layer reaction become alloy unlikely and formation (being generally amorphous silicon) after a while afterwards; by utilizing the 5th photomask to form the mask of making by resist, and optionally this conductive metal film of etching to form the guard electrode 718 (Figure 14 A) that covers wiring 719.Here use the thick Ti film of 200nm that obtains by sputter.Similarly, the source electrode of connection electrode 720, terminal electrode 751 and TFT or drain electrode are also covered by this conductive metal film.Therefore, this conductive metal film also covers the side of exposure as the Al film of the second layer in the electrode, prevents that thus the aluminium atom diffusion is in photoelectric conversion layer.
Subsequently, form photoelectric conversion layer 721.Description based on embodiment and example 1 to 3 forms photoelectric conversion layer 721.
Then, on whole surface, form have 1 μ m to 30 μ m thickness comprise the insulating material sealant 724 of (for example, containing the inorganic insulating membrane of silicon), and obtain the state of Figure 14 B.Here, by CVD form 1 μ m thick contain silicon oxynitride film as insulating material membrane.Be intended to by utilizing the dielectric film that forms by CVD to improve adhesiveness.
Then, with after opening is provided, form terminal electrode 726 and 753 at etching sealant 724 by sputter.Terminal electrode 726 and 753 by titanium film (the Ti film, 100nm), the nickel film (the Ni film, 300nm) and golden film (the Au film, stack membrane 50nm) is made.Terminal electrode 726 of Huo Deing and 753 anchoring strength are greater than 5N as mentioned above, and this is sufficient anchoring strength for terminal electrode.
In above-mentioned steps, the terminal electrode 726 and 753 that formation can utilize scolder to connect, and obtain the structure shown in Figure 14 C.
Subsequently, by with the substrate dicing, cut out a plurality of optical sensor chips.Can (for example, 600cm * 720cm) makes a large amount of optical sensor chips (2mm * 1.5mm) by a slice large tracts of land substrate.
(cross-sectional view (end view) of 2mm * 1.5mm) is at its bottom view shown in Figure 15 B, and at its top view shown in Figure 15 C at a slice optical sensor chip that cuts out shown in Figure 15 A.In Figure 15 A to 15C, use the reference marker identical to be used for identical part with Figure 13 A and 13B and 14A to 14C.It should be noted that in Figure 15 A substrate 710, component forming region 800, terminal electrode 726 and 753 total film thickness are 0.8 ± 0.05mm.
In addition, in order to make the thickness attenuate of optical sensor chip, utilize CMP to handle to wait substrate 710 ground and attenuate after, cut out a plurality of optical sensor chips by utilizing slicing machine that substrate is cut into fritter.
In Figure 15 B, terminal electrode 726 and one of 753 electrode size are 0.6mm * 1.1mm, and electrode gap is 0.4mm.In addition, in Figure 15 C, the area of the light receiving part 801 almost area with second electrode is identical,, is 1.57mm that is 2In addition, amplifier circuit part 802 is provided with 100 TFT that have an appointment.
At last, the optical sensor chip that is obtained is installed on the installation side of printed wiring board 760. Use scolder 764 and 763 respectively terminal electrode 726 to be connected to electrode 761, terminal electrode 753 is connected to electrode 762.Newly brush etc. by silk screen and on the electrode 761 and 762 of printed substrate 760, to be pre-formed scolder, and scolder and terminal electrode are in join state to be installed to handle by reflow soldering.For example, under about 225 ℃ to 265 ℃, in inert atmosphere, carry out reflow soldering and handle about 10 seconds.In addition, except that scolder, can also use by metal (such as gold or the silver) projection made or the projection made by electroconductive resin etc.In addition, consider environmental problem, can also use lead-free solder to be used for installing.
Figure 14 A illustrates the optical sensor chip of installing by above-mentioned steps.In optical sensor according to the present invention (integrate and be provided with the optical sensor that output valve can be increased to 100 times amplifier circuit), under the brightness of 100lux, can obtain the photoelectric current of approximate 10 μ A with circuit.In addition, in optical sensor according to the present invention, the sensitivity wave-length coverage is 350 to 750nm, and wavelength of peak sensitivity is 580nm.In addition, dark current (Vr=5V) is 1000pA.
It should be noted that this example can combine with any description of embodiment and example 1 to 3.
Example 5
In this example, the example of the optical sensor that be provided with auxiliary electrode different with example 2 will be described with reference to figure 18A and 18B.
Optical sensor shown in Figure 18 A comprises auxiliary electrode 902 on the substrate 901, p N-type semiconductor N film 903, intrinsic semiconductor film 904, n N-type semiconductor N film 905, first dielectric film 906, second dielectric film 907, electrode layer 911 and 912 and extract motor 913 and 914.
The manufacturing step of the optical sensor in this example hereinafter will be described.At first, by utilizing the nesa coating on the substrate 901 to form auxiliary electrode 902.In this example, use the indium oxide-tin oxide (also being called the indium tin oxide that contains Si) that contains silicon (Si), except the indium oxide-tin oxide alloy that contains Si, can also use zinc oxide (ZnO), tin oxide (SnO as transparent conductive material 2), the alloy of indium oxide, indium oxide-zinc oxide of forming by the target that utilizes indium oxide wherein to mix with 2 to 20wt% zinc oxide (ZnO).
In the time can keeping the light receiving area area of abundance, can be by utilizing nontransparent conducting film, for example the shading conducting film forms auxiliary electrode 902.Can use by the element that is selected from titanium (Ti), tungsten (W), tantalum (Ta), molybdenum (Mo), neodymium (Nd), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), platinum (Pt), aluminium (Al), gold (Au), silver (Ag) or copper (Cu) or contain the monofilm that this element constitutes as the alloy material or the compound-material of main component; Perhaps use by its nitride, such as the monofilm of titanium nitride, tungsten nitride, tantalum nitride or molybdenum nitride formation.
After forming auxiliary electrode 902, form the photoelectric conversion layer that comprises p N-type semiconductor N film 903, intrinsic semiconductor film 904 and n N-type semiconductor N film 905.Comprise that the photoelectric conversion layer of p N-type semiconductor N film 903, intrinsic semiconductor film 904 and n N-type semiconductor N film 905 can have the laminated construction of reverse order, that is, with n N-type semiconductor N film, intrinsic semiconductor film and p N-type semiconductor N film according to this sequential cascade to form photoelectric conversion layer.
In this example, for example, p type half amorphous semiconductor film is formed p N-type semiconductor N film 903.Form half amorphous silicon film contain such as the impurity element that belongs to 13 families in the periodic table of elements of boron as p type half amorphous semiconductor film by plasma CVD.
After forming p N-type semiconductor N film 903, order forms semiconductor film (intrinsic semiconductor film) 904 and the n N-type semiconductor N film 905 that does not comprise the impurity that conduction type is provided.
For example, form half amorphous silicon film as intrinsic semiconductor film 904 by plasma CVD.In addition, can form contain the impurity element (for example phosphorus (P)) that belongs to 15 families in the periodic table of elements half amorphous silicon film as n N-type semiconductor N film 905, perhaps introducing belongs to the impurity element of 15 families in the periodic table of elements after forming half amorphous silicon film.Amount that it should be noted that control impurity is so that the conductivity of p type half amorphous semiconductor film 903 and n type half amorphous semiconductor film 905 is 1S/cm.
In addition, half amorphous semiconductor film not only, amorphous semiconductor film also can be used for p N-type semiconductor N film 903, intrinsic semiconductor film 904 and n N-type semiconductor N film 905.
Then, on n N-type semiconductor N film, form first dielectric film 906 by silk screen printing etc.
Then, etching p N-type semiconductor N film 903, intrinsic semiconductor film 904, n N-type semiconductor N film 905 and first dielectric film 906 are to expose the part of auxiliary electrode 902.In other words, p N-type semiconductor N film 903, intrinsic semiconductor film 904, n N-type semiconductor N film 905 and first dielectric film 906 are layered on another part of auxiliary electrode 902 in other words.The photoelectric conversion layer that comprises p N-type semiconductor N film 903, intrinsic semiconductor film 904 and n N-type semiconductor N film 905 overlaps with another part of auxiliary electrode 902 and contacts.Form second dielectric film 907 to cover auxiliary electrode 902, p N-type semiconductor N film 903, intrinsic semiconductor film 904, n N-type semiconductor N film 905 and first dielectric film 906 thereafter.
Subsequently, in first dielectric film 906 and second dielectric film 907, form contact hole (groove), and then, utilize conducting resinl to form electrode layer 911 and 912 by silk screen printing.Can use and contain such as the conducting resinl of the metal material of silver (Ag), gold (Au), copper (Cu) or nickel (Ni) or conduction carbon paste as conducting resinl.In addition, can spray by China ink and form electrode layer 911 and 912.That is to say that electrode layer 911 is not attached to the whole surface of auxiliary electrode 902, and is connected contact with the part of auxiliary electrode 902.In addition, electrode layer 912 is not attached to the whole surface of n N-type semiconductor N film 905, and is connected with the part contact of n N-type semiconductor N film 905.
If desired, so form and extract electrode 913 and 914, promptly they contact (Figure 18 A) with electrode layer 911 with 912.Form extraction electrode 913 and 914 in the mode identical with electrode 911 and 912.
Figure 18 B is illustrated in the example that forms electrode in the upper position of photoelectric conversion layer of optical sensor of Figure 18 A.In Figure 18 B, on substrate 931, form auxiliary electrode 932, and comprise p N-type semiconductor N film 933, intrinsic semiconductor film 934 is overlapping with the part of auxiliary electrode 932 with the photoelectric conversion layer of n N-type semiconductor N film 935 and contact.
Then, the overlapping top electrode 936 of a part of formation and n N-type semiconductor N film 935 on n N-type semiconductor N film 935.Utilize with auxiliary electrode 932 identical materials and form top electrode 936.
In addition, form first dielectric film 937 and second dielectric film 938, and form contact hole (groove).Then, form electrode layer 941 and 942.If desired, form extraction electrode 943 and 944.Utilize with Figure 18 A identical materials and identical manufacturing step and form first dielectric film 937, second dielectric film 938, electrode layer 941 and 942 and extraction electrode 943 and 944.
When forming top electrode 936, the resistance of overall optical transducer reduces, yet, can control the resistance value of optical sensor by the distance between auxiliary electrode 932 and the top electrode 936.
The length in the zone that auxiliary electrode 932 and p N-type semiconductor N film 933 are overlapped is called X 3(=100 μ m), and the distance between the end of the end of auxiliary electrode 932 and top electrode 936 is called X 4With X 4Be set to respectively under the situation of 0 μ m, 100 μ m and 200 μ m, withstand voltage (V) and series resistance (Ω) are as shown in table 1 respectively.
[table 1]
X 4(μm) Withstand voltage (V) Series resistance (Ω)
0 100-200 25k
100 500-1000 40k
200 1000-1500 55k
As shown in table 1, even when forming top electrode 936 and reduce the resistance value of optical sensor, also can increase the resistance value of whole element by changing distance between top electrode 936 and the auxiliary electrode 932.
It should be noted that if desired, this example can be combined with any description among embodiment and the example 1-4.
Example 6
In this example, will different with example 4 wiring of being made by the individual layer conducting film or the optical sensors that are used for visible light of electrode of comprising be described with reference to Figure 21.Identical reference marker is used for the part identical with example 4.
Figure 21 illustrates a kind of optical sensor that is used for visible light, and it has the structure that guard electrode 718,773,776,774 and 775 are set on the source electrode of the source electrode of the not wiring 719 in Figure 13 A and 13B, 14A and 14B, 15A to 15C and 20A to 20D, connection electrode 720, terminal electrode 751, TFT 730 or drain electrode 771 and TFT 731 or the drain electrode 772.
In Figure 21, by utilizing the individual layer conducting film to form wiring 1404, connection electrode 1405, terminal electrode 1401, the source electrode of TFT 731 or source electrode or the drain electrode 1403 of drain electrode 1402 and TFT 730, and preferably use titanium film (Ti film) as this conducting film.In addition, replace titanium film, can use by the element that is selected from tungsten (W), tantalum (Ta), molybdenum (Mo), neodymium (Nd), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir) or platinum (Pt) or contain the monofilm that this element constitutes as the alloy material or the compound-material of main component; Perhaps can use by its nitride, such as the monofilm of titanium nitride, tungsten nitride, tantalum nitride or molybdenum nitride formation.By utilizing monofilm to form wiring 1404, connection electrode 1405, terminal electrode 1401, the source electrode of TFT 731 or source electrode or the drain electrode 1403 of drain electrode 1402 and TFT 730, can reduce the frequency of depositing in the manufacturing step.
It should be noted that if desired this example can combine with any description in embodiment and the example 1 to 5.
According to the present invention, can make the electrooptical device of the withstand voltage raising of damage of electrostatic discharge.In addition, by in conjunction with according to electrooptical device of the present invention, can obtain the high-reliability electronic device.
Though, will appreciate that various changes and distortion are conspicuous for those skilled in the art by having described the present invention with reference to the accompanying drawings by way of example all sidedly.Therefore, if this change and distortion do not break away from hereinafter described scope of the present invention, should think that then they are included in wherein.

Claims (27)

1. electrooptical device comprises:
Photoelectric conversion layer on the substrate, it comprises first semiconductor layer, second semiconductor layer on first semiconductor layer with a kind of conduction type and has and the conduction type of above-mentioned conductivity type opposite and the 3rd semiconductor layer on second semiconductor layer;
On the 3rd semiconductor layer and first electrode that contacts with the 3rd semiconductor layer, this first electrode contacts with first semiconductor layer by the opening that is formed in the photoelectric conversion layer;
Be arranged on the 3rd semiconductor layer and the insulating barrier that contacts with the 3rd semiconductor layer; With
Second electrode that is arranged on the insulating barrier and contacts with the 3rd semiconductor layer by the opening that is formed in the insulating barrier,
Wherein remove not by second semiconductor layer and the 3rd semiconductor layer in the zone of first electrode, insulating barrier and the covering of second electrode.
2. according to the electrooptical device of claim 1, wherein substrate is a flexible substrate.
3. according to the electrooptical device of claim 2, wherein flexible substrate comprises the film that is selected from the group that comprises Polyethylene Naphthalate pen film, polyethylene terephthalate PET film and poly-naphthalenedicarboxylic acid fourth diester PBN film.
4. according to the electrooptical device of claim 1, wherein substrate is a glass substrate.
5. according to the electrooptical device of claim 1, wherein between the substrate and first semiconductor layer, provide conducting film.
6. according to the electrooptical device of claim 5, wherein conducting film is a nesa coating.
7. according to the electrooptical device of claim 1, wherein between the substrate and first semiconductor layer, colour filter is set.
8. a method that is used to make electrooptical device comprises the steps:
Form photoelectric conversion layer on substrate, it comprises first semiconductor layer, second semiconductor layer on first semiconductor layer with a kind of conduction type and has and the conduction type of the conductivity type opposite of first semiconductor layer and the 3rd semiconductor layer on second semiconductor layer;
On photoelectric conversion layer, form insulating barrier with first opening;
In photoelectric conversion layer, form second opening;
Form first electrode on the 3rd semiconductor layer, first electrode contacts with the 3rd semiconductor layer, and contacts with first semiconductor layer by second opening;
Form second electrode on insulating barrier, second electrode contacts with insulating barrier, and contacts with the 3rd semiconductor layer by first opening;
Wherein, remove not by second semiconductor layer and the 3rd semiconductor layer in the zone of first electrode, insulating barrier and the covering of second electrode.
9. the method for manufacturing electrooptical device according to Claim 8, wherein substrate is a flexible substrate.
10. according to the method for the manufacturing electrooptical device of claim 9, wherein flexible substrate comprises the film that is selected from the group that comprises Polyethylene Naphthalate pen film, polyethylene terephthalate PET film and poly-naphthalenedicarboxylic acid fourth diester PBN film.
11. the method for manufacturing electrooptical device according to Claim 8, wherein substrate is a glass substrate.
12. the method for manufacturing electrooptical device according to Claim 8, wherein after removing the 3rd semiconductor layer, formation has second dielectric film of opening, and passes described opening, forms the first extraction electrode and second that is connected to first electrode and second electrode and extracts electrode.
13. the method for manufacturing electrooptical device according to Claim 8 wherein forms conducting film between the substrate and first semiconductor layer.
14. according to the method for the manufacturing electrooptical device of claim 13, wherein conducting film is a nesa coating.
15. the method for manufacturing electrooptical device according to Claim 8 wherein forms colour filter between the substrate and first semiconductor layer.
16. a semiconductor device comprises:
Photo-electric conversion element on the substrate; With
Be used for the output valve of photo-electric conversion element is carried out the circuit of signal processing,
Wherein, this photo-electric conversion element comprises:
Photoelectric conversion layer, it comprises first semiconductor layer, second semiconductor layer on first semiconductor layer with a kind of conduction type and has and the conduction type of the conductivity type opposite of first semiconductor layer and the 3rd semiconductor layer on second semiconductor layer;
On the 3rd semiconductor layer and first electrode that contacts with the 3rd semiconductor layer, this first electrode contacts with first semiconductor layer by the opening that is formed in the photoelectric conversion layer;
On the 3rd semiconductor layer and the insulating barrier that contacts with the 3rd semiconductor layer; With
Second electrode that on the 3rd semiconductor layer and by the opening that is formed in the insulating barrier, contacts with the 3rd semiconductor layer,
Wherein remove not by second semiconductor layer and the 3rd semiconductor layer in the zone of first electrode of photoelectric conversion layer, insulating barrier and the covering of second electrode,
Wherein this circuit comprises a plurality of thin-film transistors; And
Wherein each in these a plurality of thin-film transistors comprises:
The island semiconductor district, it comprises source area, drain region and channel formation region;
Gate insulating film;
Gate electrode;
The source electrode that is electrically connected with source area; With
The drain electrode that is electrically connected with the drain region.
17. according to the semiconductor device of claim 16, wherein circuit is an amplifier circuit, in order to amplify the output valve of photo-electric conversion element.
18. according to the semiconductor device of claim 16, wherein substrate is a flexible substrate.
19. according to the semiconductor device of claim 18, wherein flexible substrate comprises the film that is selected from the group that comprises Polyethylene Naphthalate pen film, polyethylene terephthalate PET film and poly-naphthalenedicarboxylic acid fourth diester PBN film.
20. according to the semiconductor device of claim 16, wherein substrate is a glass substrate.
21., wherein between the substrate and first semiconductor layer, conducting film is set according to the semiconductor device of claim 16.
22. according to the semiconductor device of claim 21, wherein conducting film is a nesa coating.
23., wherein between the substrate and first semiconductor layer, colour filter is set according to the semiconductor device of claim 16.
24. according to the semiconductor device of claim 16, wherein each in source electrode and the drain electrode is a stack membrane.
25. according to the semiconductor device of claim 24, wherein by with titanium Ti film, the aluminium Al film that contains minor amount of silicon Si and the stacked stack membrane that forms of titanium Ti film.
26. according to the semiconductor device of claim 16, wherein each in source electrode and the drain electrode is a monofilm.
27. according to the semiconductor device of claim 26, wherein monofilm is served as reasons and is selected from the element of titanium Ti, tungsten W, tantalum Ta, molybdenum Mo, neodymium Nd, cobalt Co, zirconium Zr, zinc Zn, ruthenium Ru, rhodium Rh, palladium Pd, osmium Os, iridium Ir or platinum Pt or contains this element as the alloy material of main component or the monofilm of compound-material formation; Its nitride of perhaps serving as reasons, the monofilm that constitutes such as titanium nitride, tungsten nitride, tantalum nitride or molybdenum nitride.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110895374A (en) * 2019-11-26 2020-03-20 上海天马微电子有限公司 Display panel and display device

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1724844A2 (en) 2005-05-20 2006-11-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device, manufacturing method thereof and semiconductor device
CN101313413B (en) * 2005-11-18 2011-08-31 株式会社半导体能源研究所 Photoelectric converter
JP2007227574A (en) * 2006-02-22 2007-09-06 Fujifilm Corp Photoelectric conversion element, and solid-state imaging element
JP2007273894A (en) * 2006-03-31 2007-10-18 Fujifilm Corp Photoelectric conversion element, imaging element, and method of manufacturing imaging element
CN101438418B (en) * 2006-04-28 2011-01-26 株式会社半导体能源研究所 Photoelectric conversion element and manufacturing method of photoelectric conversion element
EP1857907B1 (en) * 2006-04-28 2009-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7791012B2 (en) * 2006-09-29 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
US8058675B2 (en) * 2006-12-27 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device using the same
US7923800B2 (en) * 2006-12-27 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8207589B2 (en) * 2007-02-15 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device
JP5014853B2 (en) * 2007-03-23 2012-08-29 株式会社日立製作所 Manufacturing method of semiconductor device
WO2008123119A1 (en) * 2007-03-26 2008-10-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device provided with the photoelectric conversion device
US8354724B2 (en) * 2007-03-26 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR101423055B1 (en) * 2007-04-18 2014-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Photoelectric conversion element having a semiconductor and semiconductor device using the same
KR101401528B1 (en) * 2007-06-29 2014-06-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Photoelectric conversion device and electronic device provided with the photoelectric conversion device
WO2009014155A1 (en) * 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
KR100855403B1 (en) * 2007-11-27 2008-08-29 주식회사 동부하이텍 Image sensor and method for manufacturing the same
JP5448584B2 (en) * 2008-06-25 2014-03-19 株式会社半導体エネルギー研究所 Semiconductor device
US8207487B2 (en) * 2008-06-25 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device including charge/discharge circuit
JP2010026467A (en) * 2008-07-24 2010-02-04 Sony Corp Display device and electronic equipment
WO2010035608A1 (en) 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101631454B1 (en) * 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit
JP4783442B2 (en) * 2009-03-18 2011-09-28 株式会社東芝 ESD protection verification apparatus and ESD protection verification method
US7948006B2 (en) * 2009-06-01 2011-05-24 Jds Uniphase Corporation Photodiode with high ESD threshold
WO2010141455A1 (en) * 2009-06-04 2010-12-09 First Solar, Inc. Metal barrier-doped metal contact layer
US20100307568A1 (en) 2009-06-04 2010-12-09 First Solar, Inc. Metal barrier-doped metal contact layer
TWI382549B (en) * 2009-08-14 2013-01-11 Nexpower Technology Corp Thin film solar cell module and manufacturing method thereof
WO2011057189A1 (en) * 2009-11-08 2011-05-12 First Solar, Inc. Back contact deposition using water-doped gas mixtures
WO2011111530A1 (en) 2010-03-11 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI606490B (en) 2010-07-02 2017-11-21 半導體能源研究所股份有限公司 Manufacturing method of semiconductor film, manufacturing method of semiconductor device, and manufacturing method of photoelectric conversion device
US8598695B2 (en) 2010-07-23 2013-12-03 Tessera, Inc. Active chip on carrier or laminated chip having microelectronic element embedded therein
KR20120050837A (en) * 2010-11-11 2012-05-21 삼성전기주식회사 Conductive film and manufacturing method
CN103885191B (en) * 2014-03-12 2016-02-24 京东方科技集团股份有限公司 3D raster box and preparation method thereof, color membrane substrates and display device
CN105573549B (en) * 2015-12-08 2018-12-25 上海天马微电子有限公司 Array substrate, touch screen, touch display device and manufacturing method of touch display device
TWI610455B (en) * 2016-12-30 2018-01-01 Method for manufacturing heterojunction thin intrinsic layer solar cell

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5680176A (en) 1979-12-04 1981-07-01 Sanyo Electric Co Ltd Photoelectromotive force device
JPS5863179A (en) 1981-10-12 1983-04-14 Fuji Electric Corp Res & Dev Ltd Photovoltaic device
US4937129A (en) 1988-01-06 1990-06-26 Semiconductor Energy Laboratory Co., Ltd. Thin film pattern structure formed on a glass substrate
JPH02177374A (en) 1988-12-27 1990-07-10 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
US5017987A (en) * 1989-03-22 1991-05-21 Ricoh Company, Ltd. Contact type image sensor
JPH03171808A (en) 1989-11-30 1991-07-25 Kinseki Ltd High-stability crystal oscillator
JPH03193315A (en) 1989-12-22 1991-08-23 Dainippon Ink & Chem Inc Manufacture of bathtub with cast layer
JPH0787243B2 (en) * 1990-10-18 1995-09-20 富士ゼロックス株式会社 Semiconductor device
JPH04321273A (en) 1991-04-19 1992-11-11 Fuji Xerox Co Ltd Image sensor
JP3398161B2 (en) 1992-01-31 2003-04-21 京セラ株式会社 Photoelectric conversion device
US5212395A (en) * 1992-03-02 1993-05-18 At&T Bell Laboratories P-I-N photodiodes with transparent conductive contacts
US6720576B1 (en) * 1992-09-11 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and photoelectric conversion device
JP3393842B2 (en) 1992-09-11 2003-04-07 株式会社半導体エネルギー研究所 Method for manufacturing photoelectric conversion device
US5821597A (en) * 1992-09-11 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JPH06151801A (en) * 1992-11-13 1994-05-31 Canon Inc Photoelectric converter and manufacture thereof
JP3310370B2 (en) * 1993-01-27 2002-08-05 株式会社半導体エネルギー研究所 Amorphous solar cell and manufacturing method thereof
EP0619676A3 (en) * 1993-04-09 1995-05-24 Kanegafuchi Chemical Ind Image reading method and device thereof.
US5670817A (en) * 1995-03-03 1997-09-23 Santa Barbara Research Center Monolithic-hybrid radiation detector/readout
JPH10135437A (en) * 1996-11-01 1998-05-22 Sharp Corp Amplification type photoelectric converter, element its manufacture and amplification type solid state imaging device
JP3193315B2 (en) 1997-02-03 2001-07-30 株式会社ナナオ Backlight brightness control device for liquid crystal display
JP3171808B2 (en) 1997-02-03 2001-06-04 株式会社ナナオ Liquid crystal display photodetector
US6188380B1 (en) 1997-02-03 2001-02-13 Nanao Corporation Photodetector of liquid crystal display and luminance control device using the same
JP4011734B2 (en) 1998-06-02 2007-11-21 キヤノン株式会社 Two-dimensional optical sensor, radiation detection apparatus and radiation diagnostic system using the same
JP2000156522A (en) 1998-11-19 2000-06-06 Canon Inc Photoelectric converter
US6495380B2 (en) * 2000-12-11 2002-12-17 Nortel Networks Limited Epitaxially grown avalanche photodiode
JP3910817B2 (en) * 2000-12-19 2007-04-25 ユーディナデバイス株式会社 Semiconductor photo detector
JP2003047017A (en) 2001-07-10 2003-02-14 Lg Electronics Inc Automatic convergence correction circuit of tri-color tube projection television
JP2003060744A (en) 2001-08-21 2003-02-28 Sanyo Electric Co Ltd Portable device
KR100944886B1 (en) * 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A method of manufacturing a semiconductor device
DE60322233D1 (en) * 2002-09-19 2008-08-28 Quantum Semiconductor Llc LIGHT-DETECTING DEVICE
JP2004134933A (en) * 2002-10-09 2004-04-30 Konica Minolta Holdings Inc Digital still camera and manufacturing method thereof
KR100520626B1 (en) * 2002-12-05 2005-10-10 삼성전자주식회사 Pin photo diode
KR100669688B1 (en) 2003-03-12 2007-01-18 삼성에스디아이 주식회사 Thin film transistor and flat display device comprising it
JP2004363279A (en) 2003-06-04 2004-12-24 Sony Corp Manufacturing method of electro-optical transducer device and manufacturing method of false wafer used for manufacturing the electro-optical transducer device
KR101067354B1 (en) * 2003-06-19 2011-09-23 가부시키가이샤 가네카 Integrated thin-film photoelectric converter
EP1523043B1 (en) * 2003-10-06 2011-12-28 Semiconductor Energy Laboratory Co., Ltd. Optical sensor and method for manufacturing the same
JP4481135B2 (en) 2003-10-06 2010-06-16 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110895374A (en) * 2019-11-26 2020-03-20 上海天马微电子有限公司 Display panel and display device

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US20090126790A1 (en) 2009-05-21
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