JPH03171808A - High-stability crystal oscillator - Google Patents

High-stability crystal oscillator

Info

Publication number
JPH03171808A
JPH03171808A JP30889189A JP30889189A JPH03171808A JP H03171808 A JPH03171808 A JP H03171808A JP 30889189 A JP30889189 A JP 30889189A JP 30889189 A JP30889189 A JP 30889189A JP H03171808 A JPH03171808 A JP H03171808A
Authority
JP
Japan
Prior art keywords
crystal oscillator
temperature
temperature compensation
crystal
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30889189A
Other languages
Japanese (ja)
Inventor
Hiroaki Akagawa
宏明 赤川
Motoyasu Hanji
元康 判治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Crystal Device Corp
Original Assignee
Kyocera Crystal Device Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Crystal Device Corp filed Critical Kyocera Crystal Device Corp
Priority to JP30889189A priority Critical patent/JPH03171808A/en
Publication of JPH03171808A publication Critical patent/JPH03171808A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To reduce the power consumption and to miniaturize the external form by using a double rotation crystal oscillator and using a thermostat at <=30 deg.C and using a compensating circuit at >30 deg.C to perform the temperature compensation. CONSTITUTION:A crystal oscillator 1 using a crystal vibrating plate whose Y plate is rotated at bout 35 deg. with the X axis as the center and is rotated about 15 deg. with the Z' axis as the center is put in a thermostatic chamber 2 at about 30 deg.C, and a high temperature compensating circuit 3 for temperature compensation for >30 deg.C is connected. The crystal oscillator 1 is heated in the thermostat 2 to perform temperature compensation for <=30 deg.C, and the temperature compensating circuit 3 is used to perform temperature compensation for >30 deg.C. Thus, a high-stability crystal oscillator is obtained which has a low power consumption, a small external form, and a stable frequency.

Description

【発明の詳細な説明】[Detailed description of the invention]

〈本発明の目的〉 [産業上の利用分野J 本発明は、ダブルローテーションの水晶振動子を用いた
高安定水晶発振器に関する。 [従来の技術1 高安定水晶発振器として、従来よりATカット水晶振動
子が用いられ、ターニングポイントが5八 〇へIy−
I/TX★田嘗▼セフ山口桝品Lフ#−m+.  ▼ハ
水晶振動子を恒温槽に入れ、恒温槽の温度を水晶振動子
のターニングポイントに合わせ、発振回路を接続して発
振させていた。 また高温加熱せず補償回路のみによる発振器、例えばT
CXOでは周波数安定度が5XIO−’が限度であった
<Object of the present invention> [Industrial Field of Application J] The present invention relates to a highly stable crystal oscillator using a double rotation crystal resonator. [Conventional technology 1] As a highly stable crystal oscillator, an AT-cut crystal resonator has conventionally been used, and the turning point is 580 Iy-
I/TX★Taman▼Sefu Yamaguchi Masuhina Lf #-m+. ▼C The crystal resonator was placed in a thermostatic chamber, the temperature of the thermostatic chamber was adjusted to the turning point of the crystal resonator, and an oscillation circuit was connected to generate oscillation. Also, an oscillator using only a compensation circuit without high temperature heating, such as T
For CXO, the frequency stability was limited to 5XIO-'.

【発明が解決しようとする課題1 しかし恒温槽を用いる高安定発振器は、消費電力が大き
く、また高温で使用するため、保温材を使用し、外形が
大きくなっていた。また沼度補償回路による発振器では
安定度に限界があった。 1本発明の目的1 本発明の目的は、消費電力が小さく、また外形も小さく
、周波数が安定な高安定水晶発振器を提供することにあ
る。 〈本発明の構成〉 [課題を解決する千段1 本発明では、いわゆるダブルローテーションの水晶振動
子を用い、30℃以下で特に周波数温度牡J++−};
日ばr、レ】一◆、I−EllmM−A{JgTlfl
−ビJ−,V30℃までは恒温槽で温め、低温側を加熱
することによりM@し、約30℃以上では温度補償回路
を用いて補償をしている。 [作用及び実施例1 第3図は、本発明に用いられる水晶振動子のカット面を
示す説明図である。Y板をX軸を中心として約35度回
転し、さらに2゛軸を中心に約15度回転した水晶振動
子が使用されている。図中第1回目の回転を1本の矢印
、第2回目の回転を2本の矢印で示している。 第2図に示す通り、このノノットアングルによる水晶振
動子の特性は、30℃付近から低温例で周波数が低下す
る。一方高温側は比較的緩やかに周波数が上昇する周波
数温度特性を有している。 本発明では、この水晶振動子を用い約30℃以下では恒
温搏を用いている。また約30℃以上の高温側ではサー
ミスタを用いてコンデンザと組み合わせた補償回路を水
晶振動子に接続する直接型1−度補償回路、またはサー
ミスタと抵抗により直流補償電圧を発生させ水晶振動子
と直列に接続した可変容量ダイオードにその電圧を印加
する間接型*i回路を用いて温度M慣している。 従来のATカットを用いた水晶発振器では50〜80℃
まで水晶振動子や発振回路を加熱していたため、加熱す
るのに大きな電力を消費していたが、本発明では約30
℃までしか温めないため、消費電ノyが小さくて済み、
また高温側も温度補償回路によって補償されているので
周波数が安定する。もちろん、高温例の補償に、ICメ
モリー等を用いた、いわゆるディジタル温度補償回路を
用いても効果は同様である。 く本発明の効果〉 本発明によって従来の高安定発振器に比べ消費電力が小
さく、外形も小さな高安定水晶発振器が実現出来、また
補償回路も高温側のみであり、構成が簡単で調整も従来
のものに比べ楽になった。
[Problem to be Solved by the Invention 1] However, a highly stable oscillator using a thermostatic oven consumes a large amount of power, and since it is used at high temperatures, a heat insulating material is used, resulting in a large external size. Furthermore, the oscillator based on the swamp compensation circuit had a limited stability. 1.Object of the present invention 1.An object of the present invention is to provide a highly stable crystal oscillator with low power consumption, small external size, and stable frequency. <Structure of the present invention> [1,000 steps to solve the problem In the present invention, a so-called double rotation crystal oscillator is used, and the frequency temperature is particularly low at 30° C. or lower.
Hiba r, Le] 1◆, I-EllmM-A {JgTlfl
-BIJ-,V Up to 30°C, it is warmed in a constant temperature bath, and M@ is performed by heating the low temperature side, and above about 30°C, compensation is performed using a temperature compensation circuit. [Operation and Example 1] FIG. 3 is an explanatory view showing a cut surface of a crystal resonator used in the present invention. A crystal resonator is used in which the Y plate is rotated about 35 degrees around the X axis and further rotated about 15 degrees around the 2' axis. In the figure, the first rotation is shown by one arrow, and the second rotation is shown by two arrows. As shown in FIG. 2, the characteristics of the crystal resonator due to this no-knot angle are such that the frequency decreases at low temperatures from around 30°C. On the other hand, the high temperature side has a frequency temperature characteristic in which the frequency increases relatively slowly. In the present invention, this crystal oscillator is used and is kept at a constant temperature of about 30° C. or lower. On the high temperature side of about 30℃ or higher, a direct type 1-degree compensation circuit that uses a thermistor and connects a compensation circuit combined with a capacitor to the crystal resonator, or a thermistor and a resistor that generates a DC compensation voltage and connects it in series with the crystal resonator. The temperature M is adjusted using an indirect *i circuit that applies the voltage to a variable capacitance diode connected to the . A crystal oscillator using a conventional AT cut has a temperature of 50 to 80°C.
Until now, the crystal resonator and oscillation circuit had been heated, which consumed a large amount of power, but with the present invention, approximately 30
Because it only heats up to ℃, power consumption is low.
Furthermore, since the high temperature side is also compensated by the temperature compensation circuit, the frequency is stabilized. Of course, the same effect can be achieved even if a so-called digital temperature compensation circuit using an IC memory or the like is used to compensate for high temperature cases. Effects of the Invention> The present invention makes it possible to realize a highly stable crystal oscillator that consumes less power and has a smaller external size than conventional highly stable oscillators, and also has a compensation circuit only on the high temperature side. It was easier than anything else.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の発振器のブロック図、第2図は本発
明に用いられる水晶振動子の周波数温度特性、第3図は
本発明に用いられる水晶振動子の結晶軸を示す説明図で
ある。 ネシ許出願人 キンセキ株式会社 惜is l 第2
Fig. 1 is a block diagram of the oscillator of the present invention, Fig. 2 is an explanatory diagram showing the frequency-temperature characteristics of the crystal resonator used in the present invention, and Fig. 3 is an explanatory diagram showing the crystal axis of the crystal resonator used in the present invention. be. License applicant Kinseki Co., Ltd. 2nd

Claims (1)

【特許請求の範囲】[Claims] (1)水晶振動子を恒温槽に入れた高安定水晶発振器に
おいて、Y板をX軸を中心に約35度回転し、さらにZ
軸を中心に約15度回転させた水晶振動板を用いた水晶
振動子を約30℃の恒温槽に入れ、かつ約30℃以上に
おいて温度補償する高温温度補償回路を接続したことを
特徴とする高安定水晶発振器。
(1) In a highly stable crystal oscillator in which the crystal resonator is placed in a constant temperature bath, the Y plate is rotated approximately 35 degrees around the X axis, and then the Z
A crystal oscillator using a crystal diaphragm rotated about 15 degrees around its axis is placed in a constant temperature bath at about 30 degrees Celsius, and is connected to a high temperature temperature compensation circuit that compensates for the temperature above about 30 degrees Celsius. Highly stable crystal oscillator.
JP30889189A 1989-11-30 1989-11-30 High-stability crystal oscillator Pending JPH03171808A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30889189A JPH03171808A (en) 1989-11-30 1989-11-30 High-stability crystal oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30889189A JPH03171808A (en) 1989-11-30 1989-11-30 High-stability crystal oscillator

Publications (1)

Publication Number Publication Date
JPH03171808A true JPH03171808A (en) 1991-07-25

Family

ID=17986510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30889189A Pending JPH03171808A (en) 1989-11-30 1989-11-30 High-stability crystal oscillator

Country Status (1)

Country Link
JP (1) JPH03171808A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201858A (en) * 2006-01-27 2007-08-09 Epson Toyocom Corp Crystal resonator, and highly accurate crystal oscillator
US7936037B2 (en) 2005-02-18 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
US8138004B2 (en) 2005-05-20 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device, manufacturing method thereof and semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7936037B2 (en) 2005-02-18 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
US8138004B2 (en) 2005-05-20 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device, manufacturing method thereof and semiconductor device
JP2007201858A (en) * 2006-01-27 2007-08-09 Epson Toyocom Corp Crystal resonator, and highly accurate crystal oscillator
JP4591364B2 (en) * 2006-01-27 2010-12-01 エプソントヨコム株式会社 Crystal oscillator, high precision crystal oscillator

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