CN102163568B - 一种提取mos管沿沟道电荷分布的方法 - Google Patents
一种提取mos管沿沟道电荷分布的方法 Download PDFInfo
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- CN102163568B CN102163568B CN201110053772A CN201110053772A CN102163568B CN 102163568 B CN102163568 B CN 102163568B CN 201110053772 A CN201110053772 A CN 201110053772A CN 201110053772 A CN201110053772 A CN 201110053772A CN 102163568 B CN102163568 B CN 102163568B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (5)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110053772A CN102163568B (zh) | 2011-03-07 | 2011-03-07 | 一种提取mos管沿沟道电荷分布的方法 |
US13/499,275 US20130013245A1 (en) | 2011-03-07 | 2011-10-28 | Method for obtaining distribution of charges along channel in mos transistor |
PCT/CN2011/081475 WO2012119455A1 (zh) | 2011-03-07 | 2011-10-28 | 一种提取mos管沿沟道电荷分布的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110053772A CN102163568B (zh) | 2011-03-07 | 2011-03-07 | 一种提取mos管沿沟道电荷分布的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102163568A CN102163568A (zh) | 2011-08-24 |
CN102163568B true CN102163568B (zh) | 2012-10-10 |
Family
ID=44464719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110053772A Active CN102163568B (zh) | 2011-03-07 | 2011-03-07 | 一种提取mos管沿沟道电荷分布的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20130013245A1 (zh) |
CN (1) | CN102163568B (zh) |
WO (1) | WO2012119455A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102163568B (zh) * | 2011-03-07 | 2012-10-10 | 北京大学 | 一种提取mos管沿沟道电荷分布的方法 |
CN103094144B (zh) * | 2011-10-31 | 2015-11-25 | 无锡华润上华科技有限公司 | 一种用于预估mos管的阈值电压的方法 |
CN102520331B (zh) * | 2011-12-02 | 2013-12-11 | 北京大学 | 用于sti型ldmos器件的界面陷阱测试方法 |
CN102692543B (zh) * | 2012-06-01 | 2015-03-18 | 西安邮电大学 | 一种基于栅控漏极产生电流提取mosfet平带电压和阈值电压的方法 |
CN103474369B (zh) * | 2013-08-21 | 2016-01-20 | 北京大学 | 一种提取半导体器件栅介质层陷阱时间常数的方法 |
CN103869230B (zh) * | 2014-01-20 | 2017-10-24 | 南京大学 | 一种表征小尺寸cmos器件中界面态和氧化层陷阱局域分布的方法 |
CN104851818B (zh) * | 2014-02-14 | 2017-12-22 | 中芯国际集成电路制造(上海)有限公司 | 介质层缺陷的检测方法和检测装置 |
CN104714165B (zh) * | 2015-03-30 | 2017-10-10 | 苏州华维纳纳米科技有限公司 | 界面陷阱能级分布的光电导分析方法 |
CN106298564B (zh) * | 2015-05-19 | 2019-05-21 | 中芯国际集成电路制造(上海)有限公司 | 一种FinFET器件界面态的测量结构及测量方法、电子装置 |
CN106356313B (zh) * | 2016-11-04 | 2018-12-14 | 东南大学 | 横向绝缘栅双极型晶体管界面态的测试方法及5端口器件 |
CN108318796B (zh) * | 2017-12-12 | 2020-04-10 | 东南大学 | 一种三端口碳化硅基功率器件界面态测试方法 |
CN108021777B (zh) * | 2017-12-28 | 2021-09-03 | 上海华力微电子有限公司 | 一种闪烁噪声统计模型的建模方法及其提取方法 |
CN109001609B (zh) * | 2018-07-17 | 2020-12-22 | 马丽娟 | 计算纳米cmos器件中应力致界面态密度变化量的电荷泵方法 |
CN110045193A (zh) * | 2019-03-06 | 2019-07-23 | 珠海博雅科技有限公司 | 一种浮栅器件电报噪声测量系统及测量方法 |
CN113805030B (zh) * | 2021-09-24 | 2023-09-05 | 桂林航天工业学院 | 一种基于单片机的晶体管参数智能检测系统 |
CN116224003B (zh) * | 2022-12-26 | 2023-11-14 | 重庆大学 | Mos型半导体器件的阈值电压稳定性测试电路 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1428861A (zh) * | 2001-12-28 | 2003-07-09 | 三洋电机株式会社 | 半导体装置 |
CN101114661A (zh) * | 2006-07-25 | 2008-01-30 | 格科微电子(上海)有限公司 | Cmos图像传感器 |
CN101136347A (zh) * | 2007-09-29 | 2008-03-05 | 上海集成电路研发中心有限公司 | 一种mos管界面态的测试方法 |
CN101183134A (zh) * | 2007-12-13 | 2008-05-21 | 上海宏力半导体制造有限公司 | 电荷泵电流测试方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6911694B2 (en) * | 2001-06-27 | 2005-06-28 | Ricoh Company, Ltd. | Semiconductor device and method for fabricating such device |
EP1732080B1 (en) * | 2005-06-03 | 2008-09-24 | Interuniversitair Microelektronica Centrum Vzw | Method for extracting the distribution of charge stored in a semiconductor device |
US7890891B2 (en) * | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
CN102163568B (zh) * | 2011-03-07 | 2012-10-10 | 北京大学 | 一种提取mos管沿沟道电荷分布的方法 |
-
2011
- 2011-03-07 CN CN201110053772A patent/CN102163568B/zh active Active
- 2011-10-28 US US13/499,275 patent/US20130013245A1/en not_active Abandoned
- 2011-10-28 WO PCT/CN2011/081475 patent/WO2012119455A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1428861A (zh) * | 2001-12-28 | 2003-07-09 | 三洋电机株式会社 | 半导体装置 |
CN101114661A (zh) * | 2006-07-25 | 2008-01-30 | 格科微电子(上海)有限公司 | Cmos图像传感器 |
CN101136347A (zh) * | 2007-09-29 | 2008-03-05 | 上海集成电路研发中心有限公司 | 一种mos管界面态的测试方法 |
CN101183134A (zh) * | 2007-12-13 | 2008-05-21 | 上海宏力半导体制造有限公司 | 电荷泵电流测试方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2012119455A1 (zh) | 2012-09-13 |
CN102163568A (zh) | 2011-08-24 |
US20130013245A1 (en) | 2013-01-10 |
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Owner name: BEIJING UNIV. Effective date: 20130523 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20130523 |
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Effective date of registration: 20130523 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Peking University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |