CN102163461A - Method for improving yield and reading reliability of electrically erasable programmable read-only memory (EEPROM) - Google Patents
Method for improving yield and reading reliability of electrically erasable programmable read-only memory (EEPROM) Download PDFInfo
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- CN102163461A CN102163461A CN2011101122939A CN201110112293A CN102163461A CN 102163461 A CN102163461 A CN 102163461A CN 2011101122939 A CN2011101122939 A CN 2011101122939A CN 201110112293 A CN201110112293 A CN 201110112293A CN 102163461 A CN102163461 A CN 102163461A
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Abstract
The invention discloses a method for improving the yield and the reading reliability of an electrically erasable programmable read-only memory (EEPROM). In the method, a value of a reference unit current is set by determining a reference unit current region, so that translation of the value of the reference unit current is realized, the problem that a large number of EEPROM units fail during test due to a fixed value of the reference unit current can be solved, and the test yield is improved; meanwhile, by the method, a few of failed EEPROM units can be screened out through steps of testing the '1' state of the EEPROM by selecting a minimum value of the reference unit current region and testing the '0' state of the EEPROM by selecting a maximum value of the reference unit current region; therefore, a detection allowance for reading the '1' state and the '0' state of the EEPROM can be retained; and the reading reliability of the delivered EEPROM is improved.
Description
Technical field
The present invention relates to the EEPROM detection range, particularly a kind of method that improves EEPROM yield and reading reliability.
Background technology
In existing nonvolatile memory, but EEPROM be widely used often because of its step-by-step operation, data hold time are long, erasable, be particularly useful for requirement information and often upgrade and highly reliable occasion.Technology relative complex when EEPROM produces, the control difficulty is relatively large.In fact, at the diverse location of same brilliant unit and even same chip, CONTROL PROCESS in any case, its various parameters all can have slight change, and are normal distribution.For any single chip, if exist even single EEPROM element failure, this chip is exactly a waste product so.This just requires by rational design and screening, overcomes parameter variation within the specific limits, and it can not exerted an influence to the quality of the product that dispatches from the factory.
At present the detection of EEPROM is mainly undertaken by relative method, when testing, all storage unit on the EEPROM all is connected with same bit line (bitline), each the EEPROM unit on the same bit line synchronization can only have one selected.When storage is when " 0 " on the unit of being chosen, the threshold voltage of EEPROM is a negative value, when its grid when reading power supply and be connected, its place branch road has electric current to flow through; And work as when storing " 1 " on the unit of being chosen, the threshold voltage of EEPROM is greater than the added power supply that reads, and the electric current of place, EERPOM unit branch road is approximately zero.Setting between " 0 " and " 1 " the intermediate value of corresponding EEPROM cell current as a reference cell current, determine relatively by actual EEPROM unit and this reference cell current whether this EEPROM unit effective like this.
And in fact, because can there be electric leakage in EEPROM device itself, when EEPROM unit storage " 1 ", may there be leakage current in its place, EERPOM unit branch road, and particularly the leakage current of individual elements may influence the correctness of readout; And when EEPROM unit storage " 0 ", because the unevenness of technology, its threshold voltage not of uniform size, the correctness that " 0 " value of its individual elements is read also may be affected.If like this reference cell current simply is set between " 0 " and " 1 " corresponding EEPROM cell current intermediate value might impact EEPROM yield and reading reliability.
Summary of the invention
At above-mentioned the deficiencies in the prior art, that the technical problem to be solved in the present invention provides is one simple, effect significantly, can effectively improve EEPROM yield and reading reliability method of testing.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of method that improves EEPROM yield and reading reliability is characterized in that it comprises the steps:
1) at the diverse location of the brilliant unit of test, chooses different grouping, detect the branch current of EEPROM unit when storage " 0 " reaches " 1 " that respectively divide into groups, and determine the reference cell current interval as a reference with the above-mentioned branch current value actual distribution situation that records;
2) choose the one state that the minimum value in reference cell current interval adopts the electric current relative method to test EEPROM, the maximal value of choosing the reference cell current interval adopts the electric current relative method to test " 0 " state of EEPROM;
3) with the intermediate value of interval maximal value of reference cell current and minimum value factory setting value, to step 2 as the reference cell current of EEPROM) in judge that effective EEPROM adopts the electric current relative method that the one state of this EEPROM and " 0 " state are tested respectively and is used as final result of determination.
Preferably, in step 2), 3) in the electric current relative method adopt sense amplifier to compare, described sense amplifier comprises EEPROM, reference unit, first current source, second current source and the comparison amplifier that will detect, first current source is connected with the in-phase end of EEPROM and comparison amplifier respectively, described second current source is connected with the end of oppisite phase of reference unit and comparison amplifier respectively, is whether the decidable EEPROM unit that will detect is effective according to comparison amplifier output result.
Preferably, the current value scalable of described reference unit.
Technique scheme has following beneficial effect: this method is set the value of reference cell current by determining the reference cell current interval, thereby realize translation to the reference cell current value, overcome the EEPROM unit that may make that brings owing to reference cell current setting fixed value and the problem of large quantities of inefficacies in test, occurred, improved the test yield; The one state of this method by at first adopting the minimum value choose the reference cell current interval to test EEPROM simultaneously, the maximal value of choosing the reference cell current interval is tested " 0 " state of EEPROM " step can filter out the EEPROM unit that minority lost efficacy earlier; read EEPROM one state and " 0 " status detection surplus thereby reserve, improved the back EEPROM reliability of reading of dispatching from the factory.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
The method of this raising EEPROM yield and reading reliability is when implementing, at first at the diverse location that will test brilliant unit, choose different grouping, detect the branch current of EEPROM unit when storage " 0 " reaches " 1 " that respectively divide into groups, and determine the reference cell current interval as a reference with the above-mentioned branch current value actual distribution situation that records.Choose the one state that the minimum value in reference cell current interval adopts the electric current relative method to test EEPROM then, the maximal value of choosing the reference cell current interval adopts the electric current relative method to test " 0 " state of EEPROM.
Above-mentioned electric current relative method adopts sense amplifier to compare, this sense amplifier comprises EEPROM, reference unit, the first current source I1, the second current source I2 and the comparison amplifier 1 that will detect, EEPROM comprises several EEPROM unit, and each EEPROM unit is made up of pipe M3, M5.The structure of reference unit is identical with the structure of EEPROM unit, it is made up of pipe M4, M6, reference unit adopts the structure identical with the EEPROM unit can make reference unit more similar to the working environment of EEPROM unit, thereby improve the accuracy that detects, this reference unit can be regulated as required.The first current source I1 is connected with the in-phase end of EEPROM unit and comparison amplifier 1 respectively, the second current source I2 is connected with the end of oppisite phase of reference unit and comparison amplifier 1 respectively, is whether the decidable EEPROM unit that will detect is effective according to comparison amplifier 1 output result like this.
When testing, each EEPROM unit all is connected with same bit line (bitline), each EEPROM unit on the same bit line synchronization can only have one selected, when storing " 0 " on the unit of being chosen, the threshold voltage of EEPROM is a negative value, when its grid when reading power supply and be connected, its place branch road has electric current to flow through; And work as when storing " 1 " on the unit of being chosen, the threshold voltage of EEPROM is greater than the added power supply that reads, and the electric current of place, EERPOM unit branch road is approximately zero.The one state that adopts the electric current relative method to test EEPROM with the minimum value of choosing the reference cell current interval, the maximal value of choosing the reference cell current interval adopts the electric current relative method to test " 0 " state of EEPROM, so just can filter out the EEPROM unit that minority lost efficacy earlier, read EEPROM one state and " 0 " status detection surplus thereby reserve, improved the back EEPROM reliability of reading of dispatching from the factory.
At last with the intermediate value of interval maximal value of above-mentioned reference cell current and minimum value factory setting value as the reference cell current of EEPROM, to judging that after above-mentioned screening effective EEPROM adopts the electric current relative method that one state and " 0 " state of this EEPROM are tested respectively, is used as final result of determination with this.This method is set the value of reference cell current by determining the reference cell current interval, thereby realize translation to the reference cell current value, overcome the EEPROM unit that may make that brings owing to reference cell current setting fixed value and the problem of large quantities of inefficacies in test, occurred, improved the test yield.
For the ease of understanding, now for example the inventive method is further described: at first at the brilliant first diverse location of test, choose different grouping, detect the branch current of EEPROM unit when storage " 0 " reaches " 1 " that respectively divide into groups, and determine the reference cell current interval as a reference with the above-mentioned branch current value actual distribution situation that records; The one state that adopts the electric current relative method to test EEPROM as the reference cell current with the minimum value a that chooses the reference cell current interval then, the maximal value b that chooses the reference cell current interval adopts the electric current relative method to test " 0 " state of EEPROM as the reference cell current, thereby can screen the EEPROM unit that a part lost efficacy.At last with the intermediate value (a+b)/2 of interval maximal value b of reference cell current and minimum value a factory setting value as the reference cell current of EEPROM.
More than a kind of EEPROM of the raising yield that the embodiment of the invention provided and the method for reading reliability are described in detail; for one of ordinary skill in the art; thought according to the embodiment of the invention; part in specific embodiments and applications all can change; in sum; this description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. a method that improves EEPROM yield and reading reliability is characterized in that it comprises the steps:
1) at the diverse location of the brilliant unit of test, chooses different grouping, detect the branch current of EEPROM unit when storage " 0 " reaches " 1 " that respectively divide into groups, and determine the reference cell current interval as a reference with the above-mentioned branch current value actual distribution situation that records;
2) choose the one state that the minimum value in reference cell current interval adopts the electric current relative method to test EEPROM, the maximal value of choosing the reference cell current interval adopts the electric current relative method to test " 0 " state of EEPROM;
3) with the intermediate value of interval maximal value of reference cell current and minimum value factory setting value, to step 2 as the reference cell current of EEPROM) in judge that effective EEPROM adopts the electric current relative method that the one state of this EEPROM and " 0 " state are tested respectively and is used as final result of determination.
2. a kind of method that improves EEPROM yield and reading reliability according to claim 1, it is characterized in that: in step 2), 3) the electric current relative method in adopts sense amplifier to compare, described sense amplifier comprises the EEPROM that will detect, reference unit, first current source, second current source and comparison amplifier, first current source is connected with the in-phase end of EEPROM and comparison amplifier respectively, described second current source is connected with the end of oppisite phase of reference unit and comparison amplifier respectively, is whether the decidable EEPROM unit that will detect is effective according to comparison amplifier output result.
3. a kind of method that improves EEPROM yield and reading reliability according to claim 2 is characterized in that: the current value scalable of described reference unit.
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| CN2011101122939A CN102163461A (en) | 2011-05-03 | 2011-05-03 | Method for improving yield and reading reliability of electrically erasable programmable read-only memory (EEPROM) |
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| CN2011101122939A CN102163461A (en) | 2011-05-03 | 2011-05-03 | Method for improving yield and reading reliability of electrically erasable programmable read-only memory (EEPROM) |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104766623A (en) * | 2015-04-20 | 2015-07-08 | 北京航空航天大学 | Circuit for enhancing STT-MRAM (Spin Transfer Torque-Magnetoresistive Random Access Memory) reading reliability by using substrate bias voltage feedback |
| CN104795088A (en) * | 2014-01-22 | 2015-07-22 | 中芯国际集成电路制造(上海)有限公司 | Sense amplifier and memorizer |
| CN104795087A (en) * | 2014-01-22 | 2015-07-22 | 中芯国际集成电路制造(上海)有限公司 | Sense amplifier used for reading data, and memorizer |
| CN109192235A (en) * | 2018-10-17 | 2019-01-11 | 上海华虹宏力半导体制造有限公司 | The reference current control circuit of memory |
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| CN1779857A (en) * | 2004-11-09 | 2006-05-31 | 松下电器产业株式会社 | Non-volatile semiconductor memory device and method for reading the same |
| US20090037784A1 (en) * | 2007-07-30 | 2009-02-05 | Samsung Electronics Co., Ltd. | Semiconductor memory device having mount test circuits and mount test method thereof |
| CN102027548A (en) * | 2008-04-29 | 2011-04-20 | 桑迪士克以色列有限公司 | Non-volatile multilevel memory with adaptive setting of reference voltage levels for program, verify and read |
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2011
- 2011-05-03 CN CN2011101122939A patent/CN102163461A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1779857A (en) * | 2004-11-09 | 2006-05-31 | 松下电器产业株式会社 | Non-volatile semiconductor memory device and method for reading the same |
| US20090037784A1 (en) * | 2007-07-30 | 2009-02-05 | Samsung Electronics Co., Ltd. | Semiconductor memory device having mount test circuits and mount test method thereof |
| CN102027548A (en) * | 2008-04-29 | 2011-04-20 | 桑迪士克以色列有限公司 | Non-volatile multilevel memory with adaptive setting of reference voltage levels for program, verify and read |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795088A (en) * | 2014-01-22 | 2015-07-22 | 中芯国际集成电路制造(上海)有限公司 | Sense amplifier and memorizer |
| CN104795087A (en) * | 2014-01-22 | 2015-07-22 | 中芯国际集成电路制造(上海)有限公司 | Sense amplifier used for reading data, and memorizer |
| CN104795087B (en) * | 2014-01-22 | 2017-08-25 | 中芯国际集成电路制造(上海)有限公司 | sense amplifier and memory for reading data |
| CN104795088B (en) * | 2014-01-22 | 2018-03-27 | 中芯国际集成电路制造(上海)有限公司 | Sense amplifier and memory |
| CN104766623A (en) * | 2015-04-20 | 2015-07-08 | 北京航空航天大学 | Circuit for enhancing STT-MRAM (Spin Transfer Torque-Magnetoresistive Random Access Memory) reading reliability by using substrate bias voltage feedback |
| CN104766623B (en) * | 2015-04-20 | 2017-08-25 | 北京航空航天大学 | A kind of utilization substrate bias feedback enhancing STT MRAM read the circuit of reliability |
| CN109192235A (en) * | 2018-10-17 | 2019-01-11 | 上海华虹宏力半导体制造有限公司 | The reference current control circuit of memory |
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Application publication date: 20110824 |