CN102158787A - MEMS (Micro Electro Mechanical System) microphone and pressure integration sensor, and manufacturing method thereof - Google Patents
MEMS (Micro Electro Mechanical System) microphone and pressure integration sensor, and manufacturing method thereof Download PDFInfo
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- CN102158787A CN102158787A CN2011100611707A CN201110061170A CN102158787A CN 102158787 A CN102158787 A CN 102158787A CN 2011100611707 A CN2011100611707 A CN 2011100611707A CN 201110061170 A CN201110061170 A CN 201110061170A CN 102158787 A CN102158787 A CN 102158787A
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/006—Interconnection of transducer parts
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Abstract
The invention relates to an MEMS (Micro Electro Mechanical System) microphone and pressure integration sensor and a manufacturing method thereof. The sensor provided by the invention comprises a first substrate and a second substrate, wherein the first substrate is provided with an induction film of a capacitance pressure sensing unit, a sensitive film of a microphone unit and a first bonding layer on the surface of the first substrate; the second substrate is provided with a dielectric layer between conductors, a conductor wiring layer positioned in the dielectric layer between the conductors and/or a second bonding layer on the surface of the second substrate; the second substrate and the first substrate are oppositely arranged and fixedly connected through the first bonding layer and the second bonding layer; and the patterns of the first bonding layer and the second bonding layer correspond to each other and are conductive materials. In the MEMS microphone and pressure sensor and the manufacturing method thereof provided by the invention, the capacitance pressure sensing unit and the microphone unit through the two substrates, thus the sensor and method provided by the invention are suitable for chip structures produced in a large scale and integrated with various MEMS sensors, are beneficial to the compatibility with an integrated circuit process, have the advantages that the standardization of a manufacturing process and a packaging process is enhanced, the volumes of devices are small, the signal-to-noise ratio performance is excellent, and the interference resistance is high.
Description
Technical field
The present invention relates to microelectromechanical systems technology, particularly a kind of MEMS microphone and pressure integrated sensor and preparation method thereof.
Background technology
In recent years, it is more and more that various MEMS transducers are used in mobile phone and other portable type electronic products, and for example MEMS microphone, pressure sensor and gyroscope etc. replace traditional transducer with its miniaturization and lightening characteristics.Particularly the fast development of smart mobile phone has driven the demand of market to various MEMS transducers, and the huge day by day ecosystem of smart mobile phone application software will be given the credit to the MEMS transducer to a great extent.
The MEMS microphone is that widespread usage is on mobile phone, earphone, notebook computer, video camera and automobile by the microelectromechanical systems technology mini microphone that etching pressure sensing diaphragm is made on semiconductor.Under the driving that further reduces of MEMS microphone and cmos compatible demand and MEMS microphone size, the encapsulating structure of MEMS microphone becomes the focus of present research, companies such as Infineon, Lou formula, Omron drop into a large amount of fund and technical forces and carry out the research of MEMS microphone packaging scheme, but, above-mentioned company makes cmos circuit and MEMS microphone respectively, then cmos circuit and MEMS microphone are positioned in the substrate, adopt the Wire-bonding technology that cmos circuit is linked to each other with the MEMS microphone.
MEMS pressure sensor size with respect to traditional mechanical quantity transducer is littler, and control precision is higher, manufacture craft can with the silicon integrated circuit technical compatibility, thereby its cost performance increases substantially.Present MEMS pressure sensor has capacitance pressure transducer, and capacitance pressure transducer,, and the both is the MEMS transducer of making on silicon chip.Capacitance pressure transducer, have with the air be spacer medium film capacity plate antenna structure, when a membrane electrode of capacity plate antenna is subjected to ambient pressure and produces deformation, capacitance changes thereupon, after signal processing circuit converts capacitance to voltage signal, amplify output, have higher certainty of measurement and lower power consumption.
Capacitance pressure transducer, have with the air be spacer medium film capacity plate antenna structure, when a membrane electrode of capacity plate antenna is subjected to ambient pressure and produces deformation, capacitance changes thereupon, after signal processing circuit converts capacitance to voltage signal, amplify output, have higher certainty of measurement and lower power consumption.
Yet problem is, in the manufacture method of above-mentioned traditional capacitance pressure transducer, and microphone sensor, no matter be pressure sensor chip or microphone sensor chip, they and conductor line chip or signal processing circuit chip are discrete, it is integrated by packaging technology that each chip is made the back respectively, no matter be the plastic packaging that the band cavity is added a cover, or the method for metal-back encapsulation, its encapsulation process is all complicated, be not easy to and ripe ic manufacturing technology compatibility, and device size is bigger, and cost also raises thus.
In addition, because the making of various transducers and the notable difference between the method for packing do not have integrated product to come into the market up to now yet.And along with the application of various MEMS transducers in mobile phone, market realizes that to various MEMS transducers integrated demand has become more and more obvious, therefore, research and development are applicable to that chip structures large-scale production, integrated various MEMS transducers and manufacture method have become main trend in the future.
Summary of the invention
The problem that the present invention solves provides a kind of MEMS microphone and pressure integrated sensor and preparation method thereof, makes all relative with encapsulation process simply, be convenient to the ic manufacturing technology compatibility with maturation, and device size is less.
For addressing the above problem, the invention provides a kind of MEMS microphone and pressure integrated sensor, comprising:
First substrate has the sensor film of capacitive pressure sensing unit, the sensitive thin film of microphone unit and first adhesive layer of described first substrate surface;
Second substrate has dielectric layer between conductor, is arranged in the conductor connecting line layer of dielectric layer between described conductor and/or second adhesive layer of described second substrate surface;
Wherein, described second substrate and first substrate are oppositely arranged, and fixedly connected with second adhesive layer by first adhesive layer, and the pattern of described first adhesive layer and second adhesive layer is corresponding and be electric conducting material.
The sensor film of described pressure sensitive unit and the sensitive thin film of microphone unit are arranged in same rete, and perhaps, the sensor film of described pressure sensitive unit and the back plate electrode of microphone unit are arranged in same rete.
Described microphone unit comprises sensitive thin film, cavity and back plate electrode, and described cavity is formed between first substrate and second substrate, and described back plate electrode is positioned at cavity, and is corresponding with the position of sensitive thin film;
The back side of described first substrate has first opening, and this first opening is corresponding with the position of described sensitive thin film or back plate electrode.
Described capacitive pressure sensing unit comprises sensor film, reference pressure chamber and fixed electrode, and described reference pressure chamber is between first substrate and second substrate, and described fixed electrode is arranged in the reference pressure chamber, and is corresponding with the position of sensor film;
The back side of described first substrate has second opening, and this second opening exposes described sensor film.
The sensitive thin film of described microphone unit and the position of back plate electrode can exchange.
The material of described sensitive thin film comprises the low stress polysilicon.
Described second adhesive layer is positioned at conductor connecting line layer top, and perhaps, described second adhesive layer is the superiors' conductor layer in the conductor connecting line layer.
Described first adhesive layer and/or second adhesive layer are Ge layer, Si layer, Au layer, Al layer, Au/Sn lamination or Al/Ge lamination.
Described first substrate comprises: second dielectric layer on first dielectric layer on silicon substrate, the described silicon substrate, described first dielectric layer, be embedded in first conductor layer in described second dielectric layer, and second conductor layer on described second dielectric layer;
Described first adhesive layer is positioned on second conductor layer;
Described capacitive pressure sensing unit also comprises the movable electrode that is positioned at described reference pressure chamber, and described movable electrode is connected with described sensor film center by support arm;
Described sensor film and sensitive thin film are formed in first conductor layer, and described movable electrode and back plate electrode are formed in second conductor layer.
Described second substrate is SOI substrate or monocrystalline substrate, also comprises signal processing circuit in the substrate between described conductor under the dielectric layer.
The back side of described second substrate has the 3rd opening, and is corresponding with the position of the sensitive thin film of described microphone unit, and described cavity is exposed.
Described MEMS microphone and pressure integrated sensor also comprise:
Package substrate, carrying MEMS microphone and pressure integrated sensor and corresponding to the back side of described second substrate;
Packaging body is positioned at around described package substrate top and described first substrate and second substrate, and exposes described first opening and second opening, and the material of this packaging body comprises plastics;
Cap is positioned at described packaging body top, and has package cavity between described first substrate;
Wherein, have sound and pressure opening with described the 3rd open communication in the described package substrate.
Optionally, described MEMS microphone and pressure integrated sensor also comprise:
Package substrate, carrying MEMS microphone and pressure integrated sensor and corresponding to the back side of described second substrate;
Packaging body is positioned at around described package substrate top and described first substrate and second substrate, and exposes described first opening and second opening, and the material of this packaging body comprises plastics.
Preferably, also comprise stress-buffer layer between the described packaging body and fixedly connected first substrate, second substrate.
Preferably, described second substrate also comprises a plurality of pressure welding weld pads that are positioned at conductor connecting line layer periphery, and pairing first substrate of described a plurality of pressure welding weld pads is removed.
The manufacture method of a kind of described MEMS microphone and pressure integrated sensor accordingly, also is provided, may further comprise the steps:
Step S1: first substrate is provided, on described first substrate, forms sensor film, the sensitive thin film of microphone unit and first adhesive layer of described first substrate surface of capacitive pressure sensing unit;
Step S2: second substrate is provided, on described second substrate, forms between conductor conductor connecting line layer and the fixed electrode in the dielectric layer between dielectric layer and described conductor, and/or second adhesive layer of described second substrate surface;
Step S3: described first adhesive layer and second adhesive layer be oppositely arranged and bonding, to connect first substrate and second substrate according to the mode of pattern correspondence;
Step S4: form first opening and second opening at the back side of described first substrate, described first opening exposes sensitive thin film or back plate electrode, and described second opening exposes sensor film.
Described manufacture method also comprises: when forming first opening and second opening, adopt etching technics to remove first substrate of described pressure welding pad zone correspondence and first dielectric layer on its surface, to expose a plurality of pressure welding weld pads in the pressure welding pad zone.
Preferably, described manufacture method also comprises: form the 3rd opening at the back side of described second substrate, the position of described the 3rd opening is corresponding to the sensitive thin film or the back plate electrode of described microphone unit.
With described first adhesive layer with second adhesive layer is oppositely arranged and may further comprise the steps according to the mode of pattern correspondence is bonding:
First adhesive layer of first substrate is relative with the position of second adhesive layer of second substrate, its pattern is in contact with one another;
Exert pressure from the back side of two substrates, heat simultaneously the contact-making surface of first adhesive layer and second adhesive layer is merged mutually.
Compared with prior art, the present invention has the following advantages: MEMS microphone provided by the invention and pressure sensor and preparation method thereof, by two substrates capacitive pressure sensing unit and microphone unit are integrated, be applicable to chip structures large-scale production, integrated various MEMS transducers, help and ic process compatibility, the standardization that improves manufacture craft and packaging technology is with unitized, and device volume is little, signal-to-noise performance is good, the antijamming capability height.
Description of drawings
Fig. 1 is the structural representation of MEMS microphone and pressure integrated sensor among the embodiment one;
Fig. 2 is the encapsulating structure schematic diagram of MEMS microphone and pressure integrated sensor among Fig. 1;
Fig. 3 is the structural representation of MEMS microphone and pressure integrated sensor among the embodiment two;
Fig. 4 is the encapsulating structure schematic diagram of MEMS microphone and pressure integrated sensor among Fig. 3;
Fig. 4 a is another encapsulating structure schematic diagram of MEMS microphone and pressure integrated sensor among Fig. 3;
Fig. 5 is the manufacture method schematic flow sheet of MEMSMEMS microphone and pressure integrated sensor among the embodiment three;
The process schematic diagram of the manufacture method that provides among Fig. 5 is provided Fig. 6 to Figure 13.
Embodiment
At present, market realizes that to various MEMS transducers integrated demand has become more and more obvious, but the inventor finds, various transducers are not only made with method for packing has notable difference, and the chip of MEMS sensor chip and conductor line or cmos circuit also will separate manufacturing earlier, encapsulating then, causes manufacturing process and packaging technology complexity, and bulky, the cost height.
For this reason, the present inventor proposes a kind of MEMS microphone and pressure integrated sensor and manufacture method, utilizes microphone and pressure sensor characteristics separately, realizes unique device architecture, and manufacture craft is simple, and packaging cost is low.Compare with pressure sensor with separate microphone, utilize the microphone of this fabrication techniques and pressure integrated sensor to have tangible volume and cost advantage.
Describe the embodiment of described microphone and pressure integrated sensor in detail below in conjunction with accompanying drawing.
Fig. 1 is the structural representation of MEMS microphone and pressure sensor in the present embodiment, and as shown in the figure, this MEMS microphone and pressure integrated sensor comprise:
Wherein, described second substrate 200 and first substrate 100 are oppositely arranged, and fixedly connected with second adhesive layer 202 by first adhesive layer 102, and the pattern of described first adhesive layer 102 and second adhesive layer 202 is corresponding and be electric conducting material.Described " pattern correspondence " is meant the pattern match of first adhesive layer 102 and second adhesive layer, 202 relevant positions, size, shape all can be different, the position can also can misplace, after only needing second substrate 200 and first substrate 100 to be oppositely arranged, the part that pattern can have overlapping can be in contact with one another.Need to prove, hereinafter represent position relation " on ", D score only limits to the situation that first substrate 100 shown in the figure is inverted in second substrate, 200 tops.
First substrate, 100 back sides (promptly second substrate 200) dorsad have the second opening 101c and the first opening 108c, wherein the second opening 101c exposes the sensor film 101a of described capacitive pressure sensing unit 101, and the first opening 108c exposes the sensitive thin film 108a of described microphone unit 108.
Described first adhesive layer 102 and/or second adhesive layer 202 are Si layer, Ge layer, Au layer, Al layer, Au/Sn lamination or Al/Ge lamination, also can be other metal or alloy materials.First adhesive layer 102 and second adhesive layer 202 that are all electric conducting material are in contact with one another, then can realize the electrical connection of first substrate 100 and second substrate 200, thereby the conductor connecting line layer 201 in the microphone unit 108 in first substrate 100, capacitive pressure sensing unit 101 and second substrate 200 is electrically connected, thereby realize the integrated of sensing unit and conductor line.
Capacitive pressure sensing unit 101 comprises sensor film 101a, movable electrode 101d, reference pressure chamber 101b and fixed electrode 201a, and movable electrode 101d is connected with the center of described sensor film 101a by support arm 106a.Described fixed electrode 201a is arranged in reference pressure chamber 101b, and is corresponding with the position of sensor film 101a, and the first opening 108c exposes described sensor film 101a.
In the present embodiment, first substrate comprises successively: second dielectric layer 106 on first dielectric layer 105 on silicon substrate 100, the described silicon substrate 100, described first dielectric layer 105, be embedded in first conductor layer 104 in described second dielectric layer 106, and second conductor layer 107 on described second dielectric layer 106.
Wherein, sensitive thin film 108a and sensor film 101a all are formed in described first conductor layer 104, back plate electrode 108b and movable electrode 101d all are formed in described second conductor layer 107, and the pattern of described first adhesive layer 102 is formed on second conductor layer, 107 surfaces.Support arm 106a can be formed by the material of first conductor layer 104 and second conductor layer 107, also can have the material 106 of second dielectric layer to form.
Described second substrate 200 comprises SOI substrate or monocrystalline substrate, preferably, also has the signal processing circuit (not shown) in second substrate 200, be positioned at the below of dielectric layer 203 and conductor connecting line layer 201 between conductor, described signal processing circuit for example is a cmos circuit, be used to receive, transform and detect the ambient pressure signal that capacitive pressure sensing unit 101 is sensed, conductor connecting line layer 201 be used to connect different devices and connect second adhesive layer 202 and second substrate 200 in signal processing circuit.Described second adhesive layer 202 is positioned at conductor connecting line layer 201 tops, and perhaps, described second adhesive layer 202 is the superiors' conductor connecting line layer in the conductor connecting line layer 201.
Just because of the existence of described opening 101c and reference pressure chamber 101b, sensor film 101a just has along the degree of freedom perpendicular to first substrate 100 and the 200 direction deformation of second substrate.Described reference pressure chamber 101b and opening 101c lay respectively at the both sides of sensor film 101a, and reference pressure chamber 101b seals with respect to the external world, thereby provide fixing reference pressure value for the pressure of opposite side openend changes.
In addition; can also have the protective dielectric layer (not shown) on described capacitive pressure sensing unit 101 and the microphone unit 108; be used for preventing that the process at follow-up formation first adhesive layer from damaging sensor film, also can be used as the etching stop layer of subsequent technique simultaneously.
Described second substrate 200 comprises SOI substrate or monocrystalline substrate, and dielectric layer 203 between the conductor on the substrate, is arranged in the conductor connecting line layer 201 of dielectric layer 203 between described conductor.
Preferably, has the signal processing circuit (not shown) in second substrate 200, be positioned at the below of dielectric layer 203 and conductor connecting line layer 201 between conductor, described signal processing circuit for example is a cmos circuit, be used to receive, transform and detect the ambient pressure signal that capacitive pressure sensing unit 101 is sensed, conductor connecting line layer 201 be used to connect different devices and connect second adhesive layer 202 and second substrate 200 in signal processing circuit.
Described fixed electrode 201a is formed in the conductor connecting line layer 201 of the superiors, is oppositely arranged with described movable electrode 101d.Described second adhesive layer 202 is positioned at conductor connecting line layer 201 tops, and perhaps, described second adhesive layer 202 is the superiors' conductor layer in the conductor connecting line layer 201.
When ambient pressure changes, the sensor film 101a of capacitive pressure unit 101 is along the direction deformation perpendicular to first substrate 100 and second substrate 200, movable electrode 101d also moves thereupon, and the distance between the fixed electrode 201a changes, thereby make the capacitance of capacitive pressure sensing unit 101 change, export via signal processing circuit.Because support arm 106a is connected with the center of sensor film 101a, like this, the mobile largest deformation that can reflect sensor film 101a of movable electrode 101d, thus realize the better sensitivity and the linearity.
The fixed-site of the back plate electrode 108b of described microphone, it and sensitive thin film 108a constitute two pole plates of capacitor, and when the sensitive thin film of microphone was out of shape, the distance between two pole plates of described capacitor changed, and transfers voice signal to the signal of telecommunication.The first opening 108c is as the inlet that voice signal is applied to the sensitive thin film of microphone, and voice signal can be passed on the sensitive thin film of described microphone by the first opening 108c.
Preferably, the material of described sensitive thin film comprises the low stress polysilicon, can reduce the susceptibility that the external world gives the stress of described sensitive thin film 108a by the sensitive thin film 108a of the making of low stress polysilicon, is subjected to extraneous stress influence less; Square, circular or other shapes of being shaped as of described sensitive thin film 108a, those skilled in the art can select the shape of adaptation according to MEMS microphone to be formed, specially illustrates at this, should too not limit protection scope of the present invention; Need to prove that also owing to select the low stress polysilicon to form sensitive thin film 108a, the feasible MEMS microphone of the sensitive thin film 108 of low stress polysilicon that adopts can further reduce size, thereby reduces production costs.
In addition, also have a plurality of pressure welding weld pads 204 on described second substrate 200, described pressure welding weld pad 204 is positioned at outside the conductor connecting line layer 201 (or signal processing circuit) of second substrate 200, is positioned at the same rete of described second adhesive layer 202.First substrate 100 of pressure welding weld pad 204 correspondences is removed, and makes pressure welding weld pad 204 expose, with wire bonds.
Preferably, MEMS integrated sensor in the another embodiment of the present invention can also comprise the reference unit identical with the structure of described capacitive pressure sensing unit, capacitive pressure sensing unit and reference unit are formed the differential type transducer jointly, both are formed by connecting by first substrate is relative with second substrate, and structure is identical, but does not have opening in first substrate of the sensor film of reference unit top.Measure capacitive pressure sensing unit electric capacity and reference unit electric capacity simultaneously, get its difference and do difference output, can reduce the influence of external environment factor (temperature, stress etc.) transducer output.
In addition, among other embodiment of the present invention, the sensitive thin film of described microphone unit and the position of back plate electrode can exchange, in other words, with sensitive thin film 108a shown in Figure 1 and back plate electrode 108b switch, at this moment, the voice signal that imports into from the first opening 108c can enter cavity 108d the through hole 108e by described back plate electrode 108b, and then cause sensitive thin film 108a at, voice signal is converted to the signal of telecommunication.The advantage of this kind structure is that back plate electrode 108b directly can protect sensitive thin film towards the first opening 108c.
Be not limited to shown in the figure, can comprise the array that a plurality of described MEMS capacitive pressure sensing units and microphone unit are formed on first substrate 100, comprise conductor line corresponding or signal processing circuit array (not shown) on second substrate 200 with a plurality of described MEMS pressure sensitive units, cut apart the chip that obtains the MEMS transducer after both are integrated again, form MEMS microphone and pressure integrated sensor through chip package process.
Carry out after the packaging technology, as shown in Figure 2, microphone described in the present embodiment and pressure integrated sensor also comprise:
Lead-in wire 304 is positioned at described packaging body 301, and weld with pressure welding weld pad 204 and pressure welding pin 301 respectively at the two ends of lead-in wire.
Preferably, also comprise the stress-buffer layer (not shown) between the described packaging body 302 and fixedly connected first substrate 100, second substrate 200, be used to cushion the stress of packaging body 301, thereby avoid interference the sensor film susceptibility.
Among the embodiment one, the back side part of first substrate 100 is exposed to outside the packaging body, in other words, the first opening 108c and the second opening 101c are as the inlet of difference sound and pressure, sound wave and pressure are changed introducing sensitive thin film and sensor film, in fact, also can adopt the design of different sound and pressure entrance, following examples describe in detail.
Embodiment two
Fig. 3 is the structural representation of MEMS microphone described in the present embodiment and pressure integrated sensor, and Fig. 4 is the encapsulating structure schematic diagram of integrated sensor among Fig. 3.
As shown in the figure, described MEMS microphone and pressure integrated sensor, be with the foregoing description difference, the back side of described second substrate 200 ' (first substrate 100 ' dorsad) has the 3rd opening 109, corresponding with the position of the sensitive thin film 108c ' of microphone unit, cavity 108d ' is exposed, and all has through hole among described sensitive thin film 108a ' and the back plate electrode 108b ', so, the first opening 108c ', cavity 108d ' and the 3rd opening 209 form a passage that runs through in first substrate 100 ' and second substrate 200 ', can be simultaneously as the propagation ducts of sound and pressure.
First substrate 100 ' with realized the integrated of MEMS microphone and pressure sensitive unit unit and conductor line or signal processing circuit after second substrate 200 ' is connected, and then substrate cut apart the chip that obtains the MEMS integrated sensor, form MEMS microphone and pressure integrated sensor through chip package process, also comprise:
Package substrate 300 ' is positioned at the back side of described second substrate 200 ', has a plurality of pressure welding pins 301 ', has the sound and the pressure opening 300c that are communicated with described the 3rd opening 209 in the described package substrate 300 ';
Packaging body 302 ', be positioned at described package substrate 300 ' top and described first substrate 100 ' and second substrate 200 ' on every side, and exposing the part (comprising the first opening 108c ' and the second opening 101c ') at the back side of described first substrate 100 ', the material of this packaging body 302 ' comprises plastics;
Adhesive glue 303 ' is connected described second substrate 200 ' with package substrate 300 ', and described first substrate 100 ' is connected with cap 306;
Lead-in wire 304 ' is positioned at described packaging body 302 ', and weld with pressure welding weld pad 204 ' and pressure welding pin 301 ' respectively at two ends.
Different with embodiment one, though the back exposure of first substrate 100 ' is outside packaging body 302 ' in the present embodiment, but in packed lid 306 sealings of the first opening 108c ' and the second opening 101c ' and the package cavity 307, do not contact with the external world, and sound and pressure are entered by the opening 300c ' at the package substrate back side, enter package cavity 307 via the 3rd opening 209 ', cavity 108d ' and the first opening 108c ', the sensitive thin film 108a ' of microphone unit and the sensor film 101a ' of capacitive pressure sensing unit are acted on.This structure can prevent effectively that sensitive thin film and sensor film are exposed to the external world and damage easily.
In the present embodiment, described MEMS microphone and pressure integrated sensor can also adopt the encapsulating structure among Fig. 4 a, as shown in the figure, the top of packaging body 302 ' does not have cap, in the package substrate 300 ' also without any opening but with 209 shutoff of the 3rd opening, packaging body 302 ' forms horn opening 308 at the back side of first substrate 100 ', like this, sound and pressure enter the first opening 108c ' and the second opening 101c ' respectively by horn opening 308, and horn opening 308 helps collecting voice signal.After the 209 packed substrate shutoff of the 3rd opening as the extension cavity of microphone unit, in addition, can also form bigger package cavity by another substrate that is arranged between second substrate and the package substrate, this substrate also is connected with package substrate by adhesive glue.
Similarly, MEMS microphone among the embodiment one and pressure integrated sensor also can adopt the encapsulating structure among Fig. 4 a, be the back side that packaging body exceeds first substrate, form the inlet of horn opening when exposing first opening and second opening as sound and pressure.
Other structures of described MEMS microphone and pressure integrated sensor and embodiment one are similar to be given unnecessary details no longer one by one at this.
Embodiment three
Manufacture method below in conjunction with MEMS microphone and pressure sensor among the accompanying drawing detailed description embodiment one.Fig. 5 is the flow chart of the manufacture method of MEMS microphone described in the embodiment of the invention and pressure sensor, and Fig. 6 to Figure 13 is the schematic diagram of the manufacture method of described MEMS pressure sensor.As shown in the figure, described manufacture method comprises:
Step S1: first substrate is provided, on described first substrate, forms sensor film, the sensitive thin film of microphone unit and first adhesive layer of described first substrate surface of capacitive pressure sensing unit.
Concrete, as shown in Figure 6, at first, described first substrate 100 comprises silicon substrate, forms first dielectric layer 105 on described silicon substrate, and is preferred, described first dielectric layer 105 is a membranous layer of silicon oxide, deposit first conductor layer 104 then on described first dielectric layer 105, preferred, described first conductor layer 104 is a polysilicon.Then, in described first conductor layer 104, make the sensitive thin film 108a of microphone unit and the sensor film 101a and the electrical wiring layer 103 of capacitive pressure sensing unit by photoetching, etching technics.
Described sensitive thin film 108a is used for and follow-up formation back plate electrode forms electric capacity, and described sensitive thin film 108a can vibrate under the effect of acoustical signal, and acoustical signal is converted to the signal of telecommunication; The material of described sensitive thin film 108a and sensor film 101a is the low stress polysilicon, and the low stress polysilicon can reduce the susceptibility that the external world gives the stress of described sensitive thin film 108a and sensor film 101a, is subjected to extraneous stress influence less.
Then, as shown in Figure 7, the first substrate surface deposit, second dielectric layer 106 at sensor film 101a with sensitive thin film 108a and capacitive pressure sensing unit, preferably, described second dielectric layer 106 is a membranous layer of silicon oxide, carries out photoetching, the described membranous layer of silicon oxide of etching and make through hole (among the figure not label) in second dielectric layer 106.
Then, as shown in Figure 8, deposition second conductor layer 107 on described second dielectric layer 106, while is filling vias (being used to form support arm and other syndetons) also, preferably, described second conductor layer 107 is a polysilicon, then, by photoetching, etching technics is made the back plate electrode 108b of microphone unit and the movable electrode 101d of capacitive pressure sensing unit in described second conductor layer 107, the deposit first bonding material layer (not shown) then, described first bonding material layer is formed at above second conductor layer 107, but is not positioned on back plate electrode 108b and the movable electrode 101d, avoids influencing the sensitivity of device; Adopt first mask plate to carry out photoetching process, thereby then first bonding material layer is carried out etching and form first adhesive layer 102, preferably, can also form the through hole in the back plate electrode simultaneously, the etching technics of this step can adopt traditional wet etching or plasma etching industrial.
At last, as shown in Figure 9, carry out the MEMS structure and discharge, remove the material of second dielectric layer 106 that exposes, thereby finish the manufacturing process of first substrate 100.
Step S2: second substrate is provided, on described second substrate, forms between conductor conductor connecting line layer and the fixed electrode in the dielectric layer between dielectric layer and described conductor, and/or second adhesive layer of described second substrate surface.
With reference to shown in Figure 10, described second substrate 200 comprises SOI substrate or monocrystalline substrate, and is preferred, forms signal processing circuit traditionally in this second substrate 200 earlier, and described signal processing circuit for example comprises cmos circuit; Form dielectric layer 203 between the conductor on the signal processing circuit (also can directly form the conductor connecting line layer) then, be arranged in the conductor connecting line layer 201 of dielectric layer 203 between described conductor, wherein comprise fixed electrode 201a in the conductor connecting line layer, this step can adopt copper wiring technique or aluminium interconnection process.
Then, the deposit second bonding material layer (not shown) on dielectric layer 203 between described conductor, adopt second mask plate to carry out photoetching process, thereby then second bonding material layer is carried out etching and form second adhesive layer 202, this second adhesive layer 202 can be electrically connected by the conductor connecting line layer 201 of the through hole in the dielectric layer between conductor and attachment plug and its below.
Described fixed electrode 201a is used for forming electric capacity with the sensor film 101a that forms before, and with capacitive sensing to pressure signal convert the signal of telecommunication to.
Wherein, described first adhesive layer 102 and second adhesive layer 202 are electric conducting material, and for example, described first adhesive layer 102 and/or second adhesive layer 202 are Au layer, Al layer, Au/Sn lamination or Al/Ge lamination.When described first bonding 102 layers and/or second adhesive layer 202 is the Au/Sn lamination, adopt electroplating technology to form its figure, the Al/Ge lamination can adopt photoetching, etching technics to form its figure.
Preferably, second adhesive layer 202 adopts and conductor connecting line layer 201 identical materials, Al for example, then described second adhesive layer 202 is the superiors' conductor layer in the conductor connecting line layer, in other words, in the process of the superiors' conductor layer in making the conductor connecting line layer, make the pattern of second adhesive layer 202 simultaneously, can save one photoetching process like this, help reducing cost.
Behind photoetching, etching technics, described first adhesive layer 102 is corresponding with the pattern of second adhesive layer 202, here the implication of " correspondence " is when first substrate 100 and second substrate 200 are oppositely arranged, first adhesive layer 102 is towards second adhesive layer 202, the position and the shape of both patterns cooperatively interact, and can correspondingly connect.
Optionally, as shown in figure 11, making second substrate, 200 processes can also comprise: form grooves 208 corresponding and first substrate, 100 sensitive thin film positions in second substrate 200, to extend the space of cavity 108d (referring to Figure 12,13).
When forming second adhesive layer 202, described conductor connecting line layer 201 and outside second substrate 200 on form a plurality of pressure welding weld pads 204 of pressure welding pad zone.Form in each pressure welding weld pad 204 and second adhesive layer, the 202 same technologies.
Concrete, described signal processing circuit and described conductor connecting line layer 201 are positioned at the device region of second substrate 200, be the pressure welding pad zone outside the described device region, the pressure welding pad zone comprises a plurality of pressure welding weld pads 204, be used for being connected with the pressure welding lead-in wire, in addition, also has the chip cut section outside the described device region.
Step S3: described first adhesive layer 102 and second adhesive layer 202 be oppositely arranged and bonding, to connect first substrate 100 and second substrate 200 according to the mode of pattern correspondence.
Concrete, with reference to shown in Figure 12, earlier that first adhesive layer 102 of first substrate 100 is relative with the position of second adhesive layer 202 of second substrate 200, its pattern is in contact with one another, exert pressure from the back side of two substrates then, heat simultaneously the contact-making surface of first adhesive layer 102 and second adhesive layer 202 is merged mutually, for example described first adhesive layer 102 and second adhesive layer 202 are the Al layer, sucker by substrate back applies 40k-90k newton pressure to substrate, heated substrate to 400 ℃, the Al layer generation solid-state diffusion that is in contact with one another achieves a fixed connection after the cooling.The technological parameter of above-mentioned connection technology is different with second adhesive layer, 202 materials because of first adhesive layer 102.
First adhesive layer 102 and second adhesive layer 202 are electric conducting material, for example metal or alloy, the capacitive pressure sensing unit 101 and the electrical wiring layer 103 of first substrate 100 can also be electrically connected with the conductor connecting line layer 201 (or signal processing circuit) of second substrate 200 in the time of fixedly connected, realize the integrated of microphone unit, capacitive pressure sensing unit and conductor connecting line layer (or signal processing circuit).
Step S4: form first opening and second opening in described first substrate, described first opening exposes sensitive thin film or back plate electrode, and described second opening exposes sensor film.
As shown in figure 13; form photoresist layer (not shown) with first opening and second patterns of openings at first substrate back; with the back side of first substrate 100 as the etching initial surface; remove not the silicon substrate material protected by photoresist and the material of first dielectric layer 105, up to exposing sensitive thin film 108c and sensor film 101c.If sensitive thin film 108c and sensor film 101c not at same one deck, then are divided into twice lithographic procedures etching.
Preferably, as shown in figure 13, also comprise after connecting first substrate 100 and second substrate 200: when forming the first opening 108c and the second opening 101c, adopt etching technics to remove first substrate 100 and first dielectric layer 105 of described pressure welding pad zone correspondence, to expose a plurality of pressure welding weld pads 204 in the pressure welding pad zone.For guaranteeing and the consistency of the first opening 108c and the second opening 101c etching process, need in the process of making first substrate (step S1), remove second dielectric layer, 106 materials of pressure welding pad zone correspondence in the time of the through hole of etching second dielectric layer 106.
In addition, above-mentioned steps is carried out first substrate 100 separately before also can being in contact with one another at the pattern of second adhesive layer 202 of first adhesive layer 102 of first substrate 100 and second substrate 200, can avoid the pollution of etching technics to second substrate 200 like this.
Remove first substrate 100 of the sensor film 101a correspondence of capacitive pressure sensing unit 101 and can remove first substrate 100 and first dielectric layer 105, only remanent induction film 101a and sensitive thin film 108a successively; Also can make etching stopping only remove first substrate 100 on first dielectric layer, 105 surfaces; such first dielectric layer 105 can play the effect of protection sensor film, and this scheme need be removed first dielectric layer 105 on first substrate of pressure welding pad zone correspondence in advance in making the step S1 of first substrate.
In the another embodiment of the present invention, the order of above step S1 and step S2 can be changed mutually, also can carry out simultaneously, in no particular order order, first substrate can be finished at different boards with the second substrate manufacture craft in the actual production, helps improving production capacity.
The manufacture method of MEMS microphone and pressure sensor and present embodiment difference are also to comprise formation the 3rd opening 209 (referring to Fig. 4) among the embodiment two, the 3rd opening 209 can first substrate with form before second substrate is connected, also can be in first substrate and formation after second substrate is connected.For example; after first substrate 100 ' and second substrate, 200 ' adhesion technique are finished; need form photoresist layer (not shown) at second substrate, the 200 ' back side with the 3rd patterns of openings; with the back side of second substrate 200 ' as the etching initial surface; remove not the material of dielectric layer 203 ' between the silicon substrate material protected by photoresist and conductor successively, up to exposing described cavity 108d '.In the other embodiments of the invention, preferred, after second adhesive layer of second substrate forms, cover photoresist layer with the 3rd patterns of openings in the front of second substrate, form the 3rd opening by etching technics.
Adopt MEMS microphone provided by the invention and pressure sensor volume little, the performance height, and described first substrate and second substrate constitute enclosed construction, MEMS microphone of the present invention and pressure sensor and preparation method thereof not only manufacturing process and packaging technology are simple, and volume is little, signal-to-noise performance is good, the antijamming capability height.
Described MEMS microphone of above embodiment and pressure integrated sensor, its second substrate include one deck conductor connecting line layer and second adhesive layer at least, in fact, also can only have one deck conductor connecting line layer, this conductor connecting line layer double as second adhesive layer.
" conductor " between the described conductor connecting line layer of the embodiment of the invention, conductor in the dielectric layer or first conductor layer, second conductor layer includes but not limited to materials such as metal, alloy or semiconductor.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (19)
1. MEMS microphone and pressure integrated sensor is characterized in that, comprising:
First substrate has the sensor film of capacitive pressure sensing unit, the sensitive thin film of microphone unit and first adhesive layer of described first substrate surface;
Second substrate has dielectric layer between conductor, is arranged in the conductor connecting line layer of dielectric layer between described conductor and/or second adhesive layer of described second substrate surface;
Wherein, described second substrate and first substrate are oppositely arranged, and fixedly connected with second adhesive layer by first adhesive layer, and the pattern of described first adhesive layer and second adhesive layer is corresponding and be electric conducting material.
2. MEMS microphone according to claim 1 and pressure integrated sensor, it is characterized in that, the sensor film of described pressure sensitive unit and the sensitive thin film of microphone unit are arranged in same rete, perhaps, the back plate electrode of the sensor film of described pressure sensitive unit and microphone unit is arranged in same rete.
3. MEMS microphone according to claim 1 and pressure integrated sensor, it is characterized in that, described microphone unit comprises sensitive thin film, cavity and back plate electrode, described cavity is formed between first substrate and second substrate, described back plate electrode is positioned at cavity, and is corresponding with the position of sensitive thin film;
The back side of described first substrate has first opening, and this first opening is corresponding with the position of described sensitive thin film or back plate electrode.
4. MEMS microphone according to claim 3 and pressure integrated sensor, it is characterized in that, described capacitive pressure sensing unit comprises sensor film, reference pressure chamber and fixed electrode, described reference pressure chamber is between first substrate and second substrate, described fixed electrode is arranged in the reference pressure chamber, and is corresponding with the position of sensor film;
The back side of described first substrate has second opening, and this second opening exposes described sensor film.
5. MEMS microphone according to claim 1 and pressure integrated sensor is characterized in that, the sensitive thin film of described microphone unit and the position of back plate electrode can exchange.
6. according to claim 1-4 each described MEMS microphone and pressure integrated sensor, it is characterized in that the material of described sensitive thin film comprises the low stress polysilicon.
7. according to claim 1-4 each described MEMS microphone and pressure integrated sensor, it is characterized in that described second adhesive layer is positioned at conductor connecting line layer top, perhaps, described second adhesive layer is the superiors' conductor layer in the conductor connecting line layer.
8. according to claim 1-4 each described MEMS microphone and pressure integrated sensor, it is characterized in that described first adhesive layer and/or second adhesive layer are Ge layer, Si layer, Au layer, Al layer, Au/Sn lamination or Al/Ge lamination.
9. MEMS microphone according to claim 1 and pressure integrated sensor, it is characterized in that, described first substrate comprises: second dielectric layer on first dielectric layer on silicon substrate, the described silicon substrate, described first dielectric layer, be embedded in first conductor layer in described second dielectric layer, and second conductor layer on described second dielectric layer;
Described first adhesive layer is positioned on second conductor layer;
Described capacitive pressure sensing unit also comprises the movable electrode that is positioned at described reference pressure chamber, and described movable electrode is connected with described sensor film center by support arm;
Described sensor film and sensitive thin film are formed in first conductor layer, and described movable electrode and back plate electrode are formed in second conductor layer.
10. MEMS microphone according to claim 1 and pressure integrated sensor is characterized in that, described second substrate is SOI substrate or monocrystalline substrate, also comprise signal processing circuit in the substrate between described conductor under the dielectric layer.
11. according to claim 3 or 4 described MEMS microphone and pressure integrated sensors, it is characterized in that the back side of described second substrate has the 3rd opening, corresponding with the position of the sensitive thin film of described microphone unit, described cavity is exposed.
12. MEMS microphone according to claim 11 and pressure integrated sensor is characterized in that, also comprise:
Package substrate, carrying MEMS microphone and pressure integrated sensor and corresponding to the back side of described second substrate;
Packaging body is positioned at around described package substrate top and described first substrate and second substrate, and exposes described first opening and second opening, and the material of this packaging body comprises plastics;
Cap is positioned at described packaging body top, and has package cavity between described first substrate;
Wherein, have sound and pressure opening with described the 3rd open communication in the described package substrate.
13. MEMS microphone according to claim 4 and pressure integrated sensor is characterized in that, also comprise:
Package substrate, carrying MEMS microphone and pressure integrated sensor and corresponding to the back side of described second substrate;
Packaging body is positioned at around described package substrate top and described first substrate and second substrate, and exposes described first opening and second opening, and the material of this packaging body comprises plastics.
14. according to claim 11 or 12 described MEMS microphone and pressure integrated sensors, it is characterized in that,
Also comprise stress-buffer layer between the described packaging body and fixedly connected first substrate, second substrate.
15. MEMS microphone according to claim 1 and pressure integrated sensor is characterized in that, described second substrate also comprises a plurality of pressure welding weld pads that are positioned at conductor connecting line layer periphery, and pairing first substrate of described a plurality of pressure welding weld pads is removed.
16. the manufacture method of MEMS microphone as claimed in claim 1 and pressure integrated sensor is characterized in that, may further comprise the steps:
Step S1: first substrate is provided, on described first substrate, forms sensor film, the sensitive thin film of microphone unit and first adhesive layer of described first substrate surface of capacitive pressure sensing unit;
Step S2: second substrate is provided, on described second substrate, forms between conductor conductor connecting line layer and the fixed electrode in the dielectric layer between dielectric layer and described conductor, and/or second adhesive layer of described second substrate surface;
Step S3: described first adhesive layer and second adhesive layer be oppositely arranged and bonding, to connect first substrate and second substrate according to the mode of pattern correspondence;
Step S4: form first opening and second opening at the back side of described first substrate, described first opening exposes sensitive thin film or back plate electrode, and described second opening exposes sensor film.
17. manufacture method according to claim 16, it is characterized in that, also comprise: when forming first opening and second opening, adopt etching technics to remove first substrate of described pressure welding pad zone correspondence and first dielectric layer on its surface, to expose a plurality of pressure welding weld pads in the pressure welding pad zone.
18. manufacture method according to claim 16 is characterized in that, also comprises: form the 3rd opening at the back side of described second substrate, the position of described the 3rd opening is corresponding to the sensitive thin film or the back plate electrode of described microphone unit.
19. manufacture method according to claim 16 is characterized in that, with described first adhesive layer with second adhesive layer is oppositely arranged and may further comprise the steps according to the mode of pattern correspondence is bonding:
First adhesive layer of first substrate is relative with the position of second adhesive layer of second substrate, its pattern is in contact with one another;
Exert pressure from the back side of two substrates, heat simultaneously the contact-making surface of first adhesive layer and second adhesive layer is merged mutually.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201110061170.7A CN102158787B (en) | 2011-03-15 | 2011-03-15 | MEMS (Micro Electro Mechanical System) microphone and pressure integration sensor, and manufacturing method thereof |
| PCT/CN2012/071444 WO2012122872A1 (en) | 2011-03-15 | 2012-02-22 | Mems microphone and integrated pressure sensor and manufacturing method therefor |
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| CN201110061170.7A CN102158787B (en) | 2011-03-15 | 2011-03-15 | MEMS (Micro Electro Mechanical System) microphone and pressure integration sensor, and manufacturing method thereof |
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| WO (1) | WO2012122872A1 (en) |
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| Publication number | Publication date |
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| CN102158787B (en) | 2015-01-28 |
| WO2012122872A1 (en) | 2012-09-20 |
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