CN105355613B - The method of aluminium germanium eutectic bonding - Google Patents
The method of aluminium germanium eutectic bonding Download PDFInfo
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- CN105355613B CN105355613B CN201510707366.7A CN201510707366A CN105355613B CN 105355613 B CN105355613 B CN 105355613B CN 201510707366 A CN201510707366 A CN 201510707366A CN 105355613 B CN105355613 B CN 105355613B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/036—Manufacturing methods by patterning a pre-deposited material
- H01L2224/0361—Physical or chemical etching
- H01L2224/03614—Physical or chemical etching by chemical means only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/828—Bonding techniques
- H01L2224/82895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/82896—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
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Abstract
A kind of method of aluminium germanium eutectic bonding, including：The first wafer and the second wafer are provided, there is first wafer the first middle section and first edge region, second wafer to have the second middle section and second edge region；Aluminium bonded layer is formed on the first edge region of first wafer；It is formed in the aluminium bonded layer through the first annular recess of aluminium bonding layer thickness and around the second annular recess of the first annular recess, aluminium bonded layer centered on the aluminium bonded layer between first annular recess and the second annular recess；Germanium bonded layer is formed on the second edge region of second wafer, and the bonding surface area of the germanium bonded layer is less than or equal to the bonding surface area of the center aluminium bonded layer；The surface of the germanium bonded layer is bonded with the surface of the center aluminium bonded layer.The method can control the thickness of the eutectic alloy formed after bonding.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of methods of aluminium germanium eutectic bonding.
Background technology
Wafer level bonding technology is to be combined with each other two wafers, and surface atom is reacted to each other, and is allowed between surface
Bonded energy reaches certain intensity, to make two panels disk be incorporated in one.There are many methods for Wafer level bonding, such as melt key
Conjunction, thermocompression bonding, cryogenic vacuum bonding, anode linkage and eutectic bonding etc..Wherein, eutectic bonding with its bonding temperature low, key
The high feature of intensity is closed to be widely used in Wafer level bonding field.
Eutectic bonding is the feature for utilizing eutectic material melting temperature relatively low, as middle dielectric layer, lower
At a temperature of, so that eutectic material is melted and is realized under elevated pressure by heating and be bonded, which can effectively reduce bonding face to flat
The requirement of whole degree and cleannes, is conducive to the raising of production efficiency.
Aluminium bonded layer and germanium bonded layer are usually made respectively in the bond area of two disk surfaces to be bonded, two kinds of materials
Eutectic alloy is formed in the technical process of material behind, two disks will be connected using the eutectic synthetic as middle layer.
However, the method for aluminium germanium eutectic bonding in the prior art cannot control the thickness of the eutectic alloy formed after bonding
Degree.
Invention content
Problems solved by the invention is to provide a kind of method of aluminium germanium eutectic bonding, can control the eutectic formed after bonding
The thickness of alloy.
To solve the above problems, the present invention provides a kind of method of aluminium germanium eutectic bonding, including：First wafer and are provided
There is the first middle section and first edge region, second wafer to have the second central area for two wafers, first wafer
Domain and second edge region；Aluminium bonded layer is formed on the first edge region of first wafer；In the aluminium bonded layer
It is formed through the first annular recess of aluminium bonding layer thickness and around the second annular recess of the first annular recess, first ring
Aluminium bonded layer centered on aluminium bonded layer between shape groove and the second annular recess；In the second edge region of second wafer
Upper formation germanium bonded layer, and the bonding surface area of the germanium bonded layer is less than or equal to the bonding surface of the center aluminium bonded layer
Area；The surface of the germanium bonded layer is bonded with the surface of the center aluminium bonded layer.
Optionally, the cross-sectional area of first annular recess and the bonding surface area of the center aluminium bonded layer
Ratio is 1:10~1:15；The bonding surface area of the cross-sectional area of second annular recess and the center aluminium bonded layer
Ratio be 1:10~1:15.
Optionally, the area of the area of the bonding surface of the germanium bonded layer and the bonding surface of the center aluminium bonded layer
Ratio be 0.6~1.
Optionally, further include forming barrier layer between first wafer and the aluminium bonded layer.
Optionally, the material on the barrier layer is titanium nitride.
Optionally, the contact surface heating pressurization of the germanium bonded layer and the aluminium bonded layer is bonded.
Optionally, when the germanium bonded layer and the aluminium bonded layer are bonded, the temperature of application is 425 degrees Celsius~
432 degrees Celsius, the pressure of application is 0.95E6 pas~1.15E6 pas.
Optionally, the thickness of the germanium bonded layer is 0.65 μm~0.8 μm.
Optionally, the thickness of the aluminium bonded layer is 0.9 μm~1.5 μm.
The present invention also provides a kind of semiconductor devices, including：First wafer and the second wafer, first wafer have the
One middle section and first edge region, second wafer have the second middle section and second edge region；Aluminium bonded layer,
On the first edge region of first wafer；First annular recess runs through the thickness of the aluminium bonded layer；Second is cyclic annular
Groove runs through the thickness of the aluminium bonded layer and around the first annular recess, first annular recess and the second annular recess
Between aluminium bonded layer centered on aluminium bonded layer；Germanium bonded layer is located on the second edge region of second wafer, and described
The bonding surface area of germanium bonded layer is less than or equal to the bonding surface area of the center aluminium bonded layer.
Compared with prior art, technical scheme of the present invention has the following advantages：
(1) since the bonding area of the germanium bonded layer is less than or equal to the face of the bonding surface of the center aluminium bonded layer
Product, during the surface of the germanium bonded layer is bonded with the surface of the center aluminium bonded layer, the germanium bonding
Germanium atom in layer, which enters in the aluminium bonded layer of center, to be bonded；And for the aluminium bonded layer and second of the first annular recess inner circumferential
Itself and the center aluminium bonded layer are isolated for the aluminium bonded layer of annular recess periphery, the first annular recess and the second annular recess
It opens, germanium atom will not enter the aluminium bonded layer of the first annular recess inner circumferential and the second annular recess periphery during bonding,
And due to being bonded after the first annular recess inner circumferential, the aluminium bonded layer of the second annular recess periphery and second wafer contacts
The temperature needed is higher than the eutectic temperature that center aluminium bonded layer and germanium bonded layer are bonded, therefore, the first annular recess inner circumferential,
The aluminium bonded layer of second annular recess periphery will not melt during center aluminium bonded layer and germanium bonded layer are bonded, energy
Enough play the role of supporting the first wafer and the second wafer, so that the thickness and the first ring of the eutectic alloy formed after bonding
The consistency of thickness of the aluminium bonded layer of shape groove inner circumferential and the second annular recess periphery can control the eutectic alloy formed after bonding
Thickness.
(2) further, the bonding surface of the cross-sectional area of first annular recess and the center aluminium bonded layer
The ratio of area is 1:10~1:15；The cross-sectional area of second annular recess is bonded table with the center aluminium bonded layer
The ratio of face area is 1:10~1:15.It is worth in range herein, the first annular recess inner circumferential and the second annular recess periphery
Aluminium bonded layer can adequately support the pressure to the application of the contact surface of the center aluminium bonded layer and the germanium bonded layer, and
So that the first annular recess and the second annular recess have the eutectic alloy that enough spaces overflow, to accurately control
The thickness of the eutectic alloy formed after bonding.
Description of the drawings
Fig. 1 to Fig. 5 is the schematic diagram of aluminium germanium eutectic bonding process in the prior art；
Fig. 6 is the scanning electron microscope diagram after aluminium germanium eutectic bonding in the prior art；
Fig. 7 to Figure 14 is the schematic diagram of aluminium germanium eutectic bonding process in one embodiment of the invention.
Specific implementation mode
As described in background, the method for aluminium germanium eutectic bonding is difficult to control the eutectic formed after bonding in the prior art
The thickness of alloy.
Fig. 1 to Fig. 5 is the schematic diagram of aluminium germanium eutectic bonding process in the prior art.
With reference to figure 1, provide the first wafer 100, first wafer 100 have the first middle section (regions I) and with institute
State the adjacent first edge region of the first middle section (II region)；Aluminium is formed on the first edge region of the first wafer 100
Bonded layer 130.
It is also formed with titanium nitride layer 120 between 130 and first wafer 100 of the aluminium bonded layer.
With reference to figure 2, Fig. 2 is the stereoscopic schematic diagram of aluminium bonded layer 130 in Fig. 1, and the aluminium bonded layer 130 is in hollow and annular knot
Structure.
With reference to figure 3, provide the second wafer 110, second wafer 110 have the second middle section (III region) and with institute
State the adjacent second edge region of the second middle section (IV region)；It is formed on the second edge region of second wafer 110
Germanium bonded layer 140, the area of the bonding surface of the germanium bonded layer 140 are equal to the face of the bonding surface of the aluminium bonded layer 130
Product.
With reference to figure 4, Fig. 4 is the stereoscopic schematic diagram of germanium bonded layer 140 in Fig. 3, and the germanium bonded layer 140 is in hollow and annular knot
Structure.
On the position of the germanium bonded layer 140 and the first wafer 100 the aluminium bonded layer 130 position correspond to, so as to
Subsequent bonding.
With reference to figure 5, the bonding surface of the germanium bonded layer 140 is contacted with the bonding surface of the aluminium bonded layer 130, and
Edge is aligned, and is bonded to the heating pressurization of the contact surface of the germanium bonded layer 140 and the aluminium bonded layer 130.
Eutectic alloy 150 is formed after bonding, the eutectic alloy 150 of spilling is flash 151.
The study found that in the prior art during aluminium germanium eutectic bonding, germanium key is applied to due to that cannot accurately control
The pressure distribution on layer and aluminium bonded layer contact surface is closed, generally for making what the aluminium bonded layer and the germanium bonded layer were bonded
Securely, so that the germanium atom in the germanium bonded layer adequately enters in the aluminium bonded layer, the pressure of application can be larger, leads
Cause during eutectic bonding, the eutectic alloy of formation can there is a phenomenon where overflowing (with reference to flash 151 in figure 5), spilling
Part flows to the periphery of the germanium bonded layer and aluminium bonded layer, and be equal to due to the area of the bonding surface of the germanium bonded layer and
The area of the bonding surface of the aluminium bonded layer is consistent, during bonding, the bonding surface of the germanium bonded layer with it is described
The bonding surface edge of aluminium bonded layer is aligned, the entire bonding table of the entire bonding surface of germanium bonded layer and the aluminium bonded layer
Face is bonded so that the germanium bonded layer and the aluminium bonded layer are in molten condition, the thickness of the eutectic alloy of formation
It spends and changes under the action of the contact surface to the germanium bonded layer and the aluminium bonded layer applies pressure, cause to accurately control
The thickness of the eutectic alloy formed after bonding.
With reference to figure 6, Fig. 6 is that aluminium bonded layer and the germanium bonded layer described in the prior art are bonded sweeping of carrying out later
The scanning electron microscope diagram that electron microscope observation obtains is retouched, shows that the eutectic alloy spillover after bonding is serious, deposits
In more flash 151.
On this basis, one embodiment of the invention provides a kind of method of aluminium germanium eutectic bonding, by aluminium bonded layer
It is formed through the first annular recess of aluminium bonding layer thickness and around the second annular recess of the first annular recess, the first ring-type is recessed
Aluminium bonded layer centered on aluminium bonded layer between slot and the second annular recess, during the bonding surface area of germanium bonded layer is less than or equal to
The bonding surface area of heart aluminium bonded layer, enabling the thickness of the eutectic alloy formed after control bonding.
To make the above purposes, features and advantages of the invention more obvious and understandable, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Fig. 7 to Figure 14 is the schematic diagram of aluminium germanium eutectic bonding process in one embodiment of the invention.
With reference to figure 7, provide the first wafer 200, first wafer 200 have the first middle section (regions I) and with institute
State the adjacent first edge region of the first middle section (II region)；Aluminium is formed on the first edge region of the first wafer 200
Bonded layer 230.
It could be formed with CMOS integrated circuits (not shown) in first wafer 200.The CMOS integrated circuits are with after
Continue the MEMS device formed in the second wafer to be electrically connected, for converting the motor message of MEMS device to electrical signal.
With reference to figure 8, Fig. 8 is the stereoscopic schematic diagram of aluminium bonded layer 230 in Fig. 7, and the aluminium bonded layer 230 is in hollow and annular knot
Structure.It should be noted that in the present embodiment, with the aluminium bonded layer 230 be hollow, rectangular cyclic structure in Fig. 8 as an example,
In other embodiments, the aluminium bonded layer 230 can be hollow circular cyclic structure or hollow irregular cyclic structure.
In the present embodiment, barrier layer 220, the barrier layer are also formed between the first wafer 200 and aluminium bonded layer 230
220 material is titanium nitride.The thickness on the barrier layer 220 can be 200 angstroms~300 angstroms.The barrier layer 220 is for stopping
Aluminium atom in aluminium bonded layer 230 diffuses in the first wafer 220, and then the CMOS for avoiding reducing in the first wafer 200 is integrated
The performance of circuit.In other embodiments, barrier layer 220 can not be formed between the first wafer 200 and aluminium bonded layer 230.
Specifically, in 200 surface deposited barrier material layer of the first wafer, it is bonded in the barrier material layer surface deposition of aluminum
Then material layer patterns the barrier material layer and aluminium bonding material layer, form barrier layer 220 and aluminium bonded layer 230.Deposition
The technique of the barrier material layer and aluminium bonding material layer is sputtering technology or evaporation technology.Pattern the barrier material layer and
The technique of aluminium bonding material layer is anisotropy dry carving technology.
In the present embodiment, in order to enable the pressure subsequently applied in bonding process adequately passes to the contact of bonding
Face needs to increase the degree etched, to the first wafer during patterning the barrier material layer and aluminium bonding material layer
200 are also patterned so that the region contacted with barrier layer 220 in 200 surface of the first wafer protrudes from the first wafer 200
Surface and 220 non-contacting region of barrier layer.
In addition, since the region contacted with barrier layer 220 in 200 surface of the first wafer protrudes from 200 surface of the first wafer
With 220 non-contacting region of barrier layer so that form cavity in the first middle section of the first wafer 200, the cavity can
The movement of movable electrode to be formed in follow-up second wafer provides space.
The thickness of the aluminium bonded layer 230 can be 0.9 μm~1.5 μm.And set the thickness of the aluminium bonded layer 230 as
Target bond thickness, the target bond thickness refer to being formed after follow-up aluminium bonded layer 230 and the bonding of germanium bonded layer are completed
Eutectic alloy thickness.
With reference to figure 9,241 He of the first annular recess through 230 thickness of aluminium bonded layer is formed in the aluminium bonded layer 230
Between the second annular recess 242 of the first annular recess 241, first annular recess, 241 and second annular recess 242
Aluminium bonded layer 230 centered on aluminium bonded layer 231.
With reference to figure 10, Figure 10 is the aluminium bonded layer that the first annular recess 241 and the second annular recess 242 are formed in Fig. 9
230 stereoscopic schematic diagram.
In the present embodiment, first annular recess, 241 and second annular recess 242 is rectangular ring groove.At it
In its embodiment, when the aluminium bonded layer 230 is hollow circular cyclic structure, first annular recess, 241 and second ring
Shape groove 242 is circular annular form groove.When the aluminium bonded layer 230 is hollow irregular cyclic structure, first ring
Shape groove 241 and the second annular recess 242 are hollow irregular cyclic structure corresponding with the shape of aluminium bonded layer 230.
Deep rie process may be used and form the first annular recess 241 and second in aluminium bonded layer 230
Annular recess 242.The depth reactive ion etching can be Bosch depths reactive ion etching (Bosch Deep
Reactive Ion Etching, Bosch DRIE) technique or low temperature moldeed depth reactive ion etching (Cryogenic
Deep Reactive Ion Etching, DRIE) technique.Etching gas can be SF6And C4F8Mixed gas.
It should be noted that in the present embodiment, first annular recess, 241 and second annular recess 242 runs through aluminium key
While closing 230 thickness of layer, thickness or first annular recess 241 and second that may also extend through barrier layer 220 are cyclic annular
The bottom of groove 242 is located in barrier layer 220.
The size of first annular recess, 241 and second annular recess 242 during follow-up bonding when to make
The bonding surface that the bonding surface of germanium bonded layer can be projected on center aluminium bonded layer 231 completely is setting condition.
The cross-sectional area of first annular recess 241 and the bonding surface area of the center aluminium bonded layer 231
Ratio is 1:10~1:15；The cross-sectional area of second annular recess 242 is bonded table with the center aluminium bonded layer 231
The ratio of face area is 1:10~1:15.If the cross-sectional area of the second annular recess 242 and the center aluminium bonded layer 231
The ratio of bonding surface area is more than 1:10 so that the cross-sectional area of second annular recess 242 is relative to center aluminium key
The bonding surface area for closing layer 231 is excessive, and the surface area of the aluminium bonded layer 230 of 242 periphery of the second annular recess is relative in
The bonding surface area of heart aluminium bonded layer 231 is too small, and the aluminium bonded layer 230 of follow-up second annular recess, 242 periphery cannot
The pressure that enough supports apply the contact surface of the aluminium bonded layer 230 and germanium bonded layer；If the cross section of the first annular recess 241
The ratio of area and the bonding surface area of the center aluminium bonded layer 231 is more than 1:10 so that first annular recess 241
Cross-sectional area it is excessive relative to the bonding surface area of center aluminium bonded layer 231, the aluminium key of 241 inner circumferential of the first annular recess
The surface area for closing layer 230 is too small relative to the bonding surface area of center aluminium bonded layer 231, follow-up first annular recess
The aluminium bonded layer 230 of 241 inner circumferentials can not support the pressure of the contact surface application to the aluminium bonded layer 230 and germanium bonded layer；
If the cross-sectional area of the second annular recess 242 and the ratio of the bonding surface area of the center aluminium bonded layer 231 are less than 1:
15, and the cross-sectional area of the first annular recess 241 and the ratio of the bonding surface area of the center aluminium bonded layer 231 are less than
1:15, the eutectic alloy that the not enough spaces of 241 and second annular recess 242 of follow-up first annular recess overflow is led
The eutectic alloy overflowed is caused to enter in the aluminium bonded layer 230 of 242 periphery of 241 inner circumferential of the first annular recess and the second annular recess,
Cause the part aluminium bonded layer 230 of 242 periphery of 241 inner circumferential of the first annular recess and the second annular recess to melt, and then causes pair
The control of the thickness of eutectic alloy after bonding reduces.
With reference to figure 11, provide the second wafer 210, second wafer 210 have the second middle section (III region) and with
The adjacent second edge region of second middle section (IV region)；On the second edge region of second wafer 210
Germanium bonded layer 250 is formed, the bonding surface area of the germanium bonded layer 250 is less than or equal to the key of the center aluminium bonded layer 231
Surface area is closed, the bonding surface of the germanium bonded layer 250 corresponds to the bonding surface of the center aluminium bonded layer 231.
Specifically, in 210 surface deposit Germanium bonding material layer of the second wafer, the germanium bonding material layer is then patterned,
Form germanium bonded layer 250.The technique for patterning the germanium bonding material layer is anisotropy dry carving technology.Deposit the germanium bonding
The technique of material layer is sputtering technology or evaporation technology.
In the present embodiment, in order to enable the pressure subsequently applied in bonding process adequately passes to the contact of bonding
Face also patterns the second wafer 210 during patterning the germanium bonding material layer, and specific step is：
Second wafer, 210 surface deposit Germanium bonding material layer；Pattern the second wafer of the germanium bonding material layer and segment thickness
210, form initial germanium bonded layer (not shown), the area contacted with the initial germanium bonded layer in 210 surface of the second wafer
Domain protrude from 210 surface of the second wafer with the initial non-contacting region of germanium bonded layer；Pattern the initial germanium
Bonded layer reduces the area on the surface of the initial germanium bonded layer, forms germanium bonded layer 250,250 bonding surface of germanium bonded layer
Area is less than or equal to the bonding surface area of the center aluminium bonded layer 231.
After forming germanium bonded layer 250, MEMS device (not shown) can be formed in the second wafer 210, i.e., in the second crystalline substance
The movable electrode of MEMS and fixed electrode are formed by etching in circle 210.
With reference to figure 12, Figure 12 is the stereoscopic schematic diagram of germanium bonded layer 250 in Figure 11, and the germanium bonded layer 250 is in hollow ring
Shape structure, in the present embodiment, the aluminium bonded layer 230 formed before the first annular recess 241 and the second annular recess 242 is hollow square
Shape cyclic structure, the germanium bonded layer 250 are in hollow, rectangular cyclic structure；In other embodiments, cyclic annular recessed when forming first
When aluminium bonded layer 230 before slot 241 and the second annular recess 242 is hollow circular cyclic structure, during the germanium bonded layer 250 is in
Empty circular annular form structure.Alternatively, during the aluminium bonded layer 230 before forming the first annular recess 241 and the second annular recess 242 is
When empty irregular cyclic structure, the germanium bonded layer 250 is in hollow irregular cyclic annular knot corresponding with the shape of aluminium bonded layer 230
Structure.
The thickness of the germanium bonded layer 250 can be 0.65 μm~0.8 μm.
The bonding surface of the germanium bonded layer 250 corresponds to the bonding surface of the center aluminium bonded layer 231, refers to：
Subsequently after the contact of the bonding surface of the bonding surface of germanium bonded layer 250 and the center aluminium bonded layer 231, the germanium bonded layer
250 bonding surface can be projected on completely in the bonding surface of the center aluminium bonded layer 231.
The area of the area of the bonding surface of the germanium bonded layer 250 and the bonding surface of the center aluminium bonded layer 231
Ratio be 0.6~1.If the area of the bonding surface of the germanium bonded layer 250 is bonded table with the center aluminium bonded layer 231
The ratio of the area in face is less than 0.6 so that the intensity after bonding is too low.
With reference to figure 13, the bonding surface of the germanium bonded layer 250 and the bonding surface of the center aluminium bonded layer 231 are connect
It touches, the bonding surface of the germanium bonded layer 250 is located on the bonding surface of the center aluminium bonded layer 231.
With reference to figure 14, the contact surface heating pressurization of the germanium bonded layer 250 and the aluminium bonded layer 230 is bonded.
When germanium bonded layer 250 and aluminium bonded layer 230 are bonded, the temperature of application is 425 degrees Celsius~432 Celsius
The pressure of degree, application is 0.95E6 pas~1.15E6 pas.The pressure of the 0.95E6 pas~1.15E6 pas is referred to the first crystalline substance
The pressure that circle 200 and 210 surface of the second wafer apply, by the first wafer 200 and 210 surface of the second wafer application pressure
Contact surface pressurization to germanium bonded layer 250 and the aluminium bonded layer 230.The germanium bonded layer 250 and the aluminium bonded layer 230 exist
It is mutually fused in the temperature range, forms eutectic alloy 260 after cooling, the eutectic alloy 260 makes first as middle layer
Wafer 200 and the second wafer 210 are bonded together.
In actual process, the radius of 200 and second wafer 210 of common first wafer is 100mm, is applied to the at this time
The pressure on 210 surface of one wafer 200 and the second wafer is 30KN~36KN.
Bonding need temperature and pressure under, the germanium atom in germanium bonded layer 250 enter in center aluminium bonded layer 231 into
Line unit closes, the aluminium bonded layer of 242 periphery of aluminium bonded layer 230 and the second annular recess for 241 inner circumferential of the first annular recess
230, the first annular recess 241 and the second annular recess 242 keep apart it with the center aluminium bonded layer 231, in bonding
Germanium atom will not enter in the aluminium bonded layer 230 of 242 periphery of 241 inner circumferential of the first annular recess and the second annular recess in the process,
And since 241 inner circumferential of the first annular recess, the aluminium bonded layer 230 of 242 periphery of the second annular recess and second wafer 210 connect
It is higher than the eutectic temperature that aluminium bonded layer 230 and germanium bonded layer 250 are bonded that the temperature that bonding needs occurs after touch, therefore, the
One annular recess, 241 inner circumferential, 242 periphery of the second annular recess aluminium bonded layer 230 in aluminium bonded layer 230 and germanium bonded layer 250
It will not be melted during being bonded, play the role of supporting the first wafer 200 and the second wafer 210, so that bonding
The aluminium bonded layer of 242 periphery of thickness and 241 inner circumferential of the first annular recess and the second annular recess of the eutectic alloy 260 formed afterwards
230 consistency of thickness can control the thickness of the eutectic alloy 260 formed after bonding.
It should be noted that the first annular recess 241 and the second annular recess 242 are by itself and the center aluminium bonded layer
231 keep apart, and germanium atom will not enter outside 241 inner circumferential of the first annular recess and the second annular recess 242 during bonding
In the aluminium bonded layer 230 in week, surface is both ways：On the one hand, the mistake being bonded in aluminium bonded layer 230 and germanium bonded layer 250
The flash 261 generated in journey flows into the first annular recess 241 and the second annular recess 242, avoids the flash 261 and the first ring
The aluminium bonded layer 230 of 242 periphery of 241 inner circumferential of shape groove and the second annular recess contacts；On the other hand, into center aluminium bonded layer
Germanium atom in 231 cannot cross the first annular recess 241 and the second annular recess 242 enters 241 inner circumferential of the first annular recess
In the aluminium bonded layer 230 of 242 periphery of the second annular recess.
The present invention also provides a kind of semiconductor devices, with reference to figure 9 and Figure 11, including：First wafer 200 and the second wafer
210, first wafer 200 has the first middle section (regions I) and first edge region (II region), second wafer
210 have the second middle section (III region) and second edge region (IV region)；It is brilliant to be located at described first for aluminium bonded layer 230
On the first edge region of circle 200；First annular recess 241 runs through the thickness of the aluminium bonded layer 230；Second annular recess
242, run through the thickness of the aluminium bonded layer 230 and around the first annular recess 241, first annular recess 241 and second
Aluminium bonded layer 231 centered on aluminium bonded layer 230 between annular recess 242；Germanium bonded layer 250 is located at second wafer 210
Second edge region on, and the bonding surface area of the germanium bonded layer 250 is less than or equal to the center aluminium bonded layer 231
Bonding surface area.
The bonding surface of the germanium bonded layer 250 corresponds to the bonding surface of the center aluminium bonded layer 231.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of method of aluminium germanium eutectic bonding, which is characterized in that including：
First wafer and the second wafer be provided, first wafer has the first middle section and a first edge region, and described the
Two wafers have the second middle section and second edge region；
Aluminium bonded layer is formed on the first edge region of first wafer；
It is formed in the aluminium bonded layer through the first annular recess of aluminium bonding layer thickness and around the of the first annular recess
Two annular recess, aluminium bonded layer centered on the aluminium bonded layer between first annular recess and the second annular recess；
Germanium bonded layer is formed on the second edge region of second wafer, and the bonding surface area of the germanium bonded layer is small
In the bonding surface area equal to the center aluminium bonded layer；
The surface of the germanium bonded layer is bonded with the surface of the center aluminium bonded layer.
2. the method for aluminium germanium eutectic bonding according to claim 1, which is characterized in that first annular recess it is transversal
The ratio of face area and the bonding surface area of the center aluminium bonded layer is 1:10~1:15；The cross of second annular recess
The ratio of area of section and the bonding surface area of the center aluminium bonded layer is 1:10~1:15.
3. the method for aluminium germanium eutectic bonding according to claim 1, which is characterized in that the bonding surface of the germanium bonded layer
The ratio of area of bonding surface of area and the center aluminium bonded layer be 0.6~1.
4. the method for aluminium germanium eutectic bonding according to claim 1, which is characterized in that further include, in first wafer
Barrier layer is formed between the aluminium bonded layer.
5. the method for aluminium germanium eutectic bonding according to claim 4, which is characterized in that the material on the barrier layer is nitridation
Titanium.
6. the method for aluminium germanium eutectic bonding according to claim 1, which is characterized in that the germanium bonded layer and the aluminium
The contact surface heating pressurization of bonded layer is bonded.
7. the method for aluminium germanium eutectic bonding according to claim 6, which is characterized in that the germanium bonded layer and the aluminium key
When conjunction layer is bonded, the temperature of application is 425 degrees Celsius~432 degrees Celsius, and the pressure of application is 0.95E6 pas~1.15E6
Pa.
8. the method for aluminium germanium eutectic bonding according to claim 1, which is characterized in that the thickness of the germanium bonded layer is
0.65 μm~0.8 μm.
9. the method for aluminium germanium eutectic bonding according to claim 1, which is characterized in that the thickness of the aluminium bonded layer is
0.9 μm~1.5 μm.
10. the semiconductor devices formed according to claim 1 to 9 any one, which is characterized in that including：
First wafer and the second wafer, first wafer have the first middle section and first edge region, and described second is brilliant
Circle has the second middle section and second edge region；
Aluminium bonded layer is located on the first edge region of first wafer；
First annular recess runs through the thickness of the aluminium bonded layer；
Second annular recess, through the aluminium bonded layer thickness and around the first annular recess, first annular recess and
Aluminium bonded layer centered on aluminium bonded layer between second annular recess；
Germanium bonded layer is located on the second edge region of second wafer, and the bonding surface area of the germanium bonded layer is small
In the bonding surface area equal to the center aluminium bonded layer.
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| CN110349847B (en) * | 2018-04-08 | 2022-11-04 | 上海新微技术研发中心有限公司 | Method for bonding through bonding material and bonding structure |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102158787A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | MEMS (Micro Electro Mechanical System) microphone and pressure integration sensor, and manufacturing method thereof |
| CN102556956A (en) * | 2012-03-08 | 2012-07-11 | 中国科学院上海微系统与信息技术研究所 | Vacuum packaging structure of MEMS (Micro Electro Mechanical System) device and manufacture method thereof |
| CN103579155A (en) * | 2012-08-01 | 2014-02-12 | 罗伯特·博世有限公司 | Method for producing a bonding pad for thermocompression bonding, and bonding pad |
| CN103875067A (en) * | 2011-10-15 | 2014-06-18 | 丹佛斯硅动力股份有限公司 | Method for providing a connection between metal moulded bodies and a power semi-conductor which is used to join thick wires or strips |
| CN104299952A (en) * | 2013-07-16 | 2015-01-21 | 台湾积体电路制造股份有限公司 | Mechanisms for forming bump structures over wide metal pad |
-
2015
- 2015-10-27 CN CN201510707366.7A patent/CN105355613B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102158787A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | MEMS (Micro Electro Mechanical System) microphone and pressure integration sensor, and manufacturing method thereof |
| CN103875067A (en) * | 2011-10-15 | 2014-06-18 | 丹佛斯硅动力股份有限公司 | Method for providing a connection between metal moulded bodies and a power semi-conductor which is used to join thick wires or strips |
| CN102556956A (en) * | 2012-03-08 | 2012-07-11 | 中国科学院上海微系统与信息技术研究所 | Vacuum packaging structure of MEMS (Micro Electro Mechanical System) device and manufacture method thereof |
| CN103579155A (en) * | 2012-08-01 | 2014-02-12 | 罗伯特·博世有限公司 | Method for producing a bonding pad for thermocompression bonding, and bonding pad |
| CN104299952A (en) * | 2013-07-16 | 2015-01-21 | 台湾积体电路制造股份有限公司 | Mechanisms for forming bump structures over wide metal pad |
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