CN108540910B - Microphone and manufacturing method thereof - Google Patents
Microphone and manufacturing method thereof Download PDFInfo
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- CN108540910B CN108540910B CN201710126748.XA CN201710126748A CN108540910B CN 108540910 B CN108540910 B CN 108540910B CN 201710126748 A CN201710126748 A CN 201710126748A CN 108540910 B CN108540910 B CN 108540910B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
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- Acoustics & Sound (AREA)
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- Manufacturing & Machinery (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a microphone and a manufacturing method thereof. The invention provides a method for manufacturing a microphone, which comprises the steps of providing a front end structure; forming a first back-sheet layer on the front-end structure; forming a first spacer layer on the first back plane layer, the first spacer layer having a first sacrificial portion; forming a vibration film layer on the first spacer layer; forming a second spacer layer on the diaphragm layer, the second spacer layer having a second sacrificial portion corresponding to the first sacrificial portion; forming a second back plate layer on the second spacer layer; and removing the second sacrificial part and the first sacrificial part, and forming a base. The microphone obtained by the method is of a double-backboard structure, so that the amplification signal is increased, the APT performance is improved, and the microphone can be applied to various packaging modes; and the double-backboard structure can eliminate undercut of the spacing layer and the backboard, and reduce the influence of electrochemical corrosion.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a microphone and a manufacturing method thereof.
Background
The microphone is a sensing device capable of converting sound energy into electric energy, and the principle of the capacitive micro-electromechanical system (condensor MEMS) microphone is that the sound pressure causes vibration of a vibration mode, and further changes the capacitance to cause a change in voltage. Nowadays, with the development and growing demand of science and technology, the demand of the condensor MEMS microphone is increasing, especially the demand of the microphone with high signal-to-noise ratio is increasing at a high speed.
Generally, the microphone package has two modes according to the air intake mode, the bottom mode (bottom) has a larger Back cavity (Back volume) than the top mode (top), which also means that the bottom mode microphone has a higher SNR (signal to noise ratio), but the bottom mode microphone Air Pressure Test (APT) has a poor performance.
Disclosure of Invention
The invention aims to provide a microphone and a manufacturing method thereof, which can improve the performance of the microphone.
In order to solve the above technical problems, the present invention provides a method for manufacturing a microphone, comprising:
providing a front end structure;
forming a first back-sheet layer on the front-end structure;
forming a first spacer layer on the first back plane layer, the first spacer layer having a first sacrificial portion;
forming a vibration film layer on the first spacer layer;
forming a second spacer layer on the diaphragm layer, the second spacer layer having a second sacrificial portion corresponding to the first sacrificial portion;
forming a second back plate layer on the second spacer layer; and
and removing the second sacrificial part, the first sacrificial part and the part of the front-end structure which is positioned right below the first sacrificial part to form a base.
Optionally, for the manufacturing method of the microphone, the front end structure includes a substrate, a first dielectric layer located on the substrate, and a second dielectric layer located on the substrate and surrounded by the first dielectric layer.
Optionally, for the manufacturing method of the microphone, the first backplate layer has a plurality of first sound holes, the diaphragm layer has a plurality of vibration holes, the second backplate layer has a plurality of second sound holes, and the first sacrificial portion covers areas where the plurality of first sound holes are located.
Optionally, for the manufacturing method of the microphone, the area where the plurality of first sound holes are located is located on the second medium layer.
Optionally, for the manufacturing method of the microphone, the step of forming a first spacer layer on the first back plate layer, where the first spacer layer has a first sacrificial portion includes:
depositing a first oxide layer, wherein the first oxide layer covers the first back plate layer;
forming grooves on two sides of the first oxide layer, wherein the grooves are located above the first medium layer;
forming a first nitride layer in the trench;
and carrying out a planarization process to enable the upper surfaces of the first oxide layer and the first nitride layer to be flush, wherein the first oxide layer between the first nitride layers is used as the first sacrificial part.
Optionally, for the manufacturing method of the microphone, the step of forming the vibration film layer on the first spacer layer includes:
patterning the first sacrificial portion to form a plurality of first recesses and second recesses;
depositing a vibration film material layer, wherein the vibration film material layer covers the upper surface and the side wall of the first spacing layer, one end of the vibration film material layer is exposed out of the first back plate layer, and the other end of the vibration film material layer covers the first back plate layer and the front end structure;
and forming a plurality of vibration holes on the vibration film material layer, and exposing the first oxide layer and the first nitride layer to obtain the vibration film layer.
Optionally, with respect to the method for manufacturing the microphone, the depth of the first recess is deeper than the depth of the second recess.
Optionally, for the manufacturing method of the microphone, the first recess has a wide upper part and a narrow lower part, and the second recess is annular and has a uniform upper and lower width.
Optionally, for the manufacturing method of the microphone, the vibration film layer forms a buffer pillar corresponding to the first recess, and the vibration film layer forms a wrinkle corresponding to the second recess.
Optionally, for the manufacturing method of the microphone, the step of forming a second spacer layer on the diaphragm layer, where the second spacer layer has a second sacrificial portion, and the second sacrificial portion corresponds to the first sacrificial portion includes:
depositing a second oxide layer, wherein the second oxide layer covers the vibration film layer;
etching the second oxide layer, and reserving a part corresponding to the first sacrificial part as a second sacrificial part;
depositing a second nitride layer on both sides of the second sacrificial portion;
and carrying out a planarization process so that the second sacrificial part and the upper surface of the second nitride layer are flush.
Optionally, for the manufacturing method of the microphone, the step of forming the second back plate layer on the second spacer layer includes:
patterning the second sacrificial portion to form a plurality of third recesses;
depositing a second back plate material layer, covering the upper surface and the side wall of the second interlayer, and covering the vibration film layer, wherein one end of the second back plate material layer is connected with the first back plate layer, and the other end of the second back plate material layer is isolated from the first back plate layer through the vibration film layer;
and forming a plurality of second sound holes on the second back plate material layer to expose the second sacrificial part and the second nitride layer to obtain the second back plate layer.
Optionally, with respect to the manufacturing method of the microphone, the third recess is wide at the top and narrow at the bottom, and has a first depth.
Optionally, for the manufacturing method of the microphone, a buffer post is formed at the second back plate layer corresponding to the third recess.
Optionally, for the method for manufacturing a microphone, patterning the second sacrificial portion to form a plurality of third recesses, the method further includes:
and patterning the second nitride layer to form a plurality of fourth recesses.
Optionally, for the manufacturing method of the microphone, a fastening pillar is formed at the second back plate layer corresponding to the fourth recess.
Optionally, with respect to the manufacturing method of the microphone, after forming the second back plate layer on the second spacer, before removing the second sacrificial portion, the first sacrificial portion, and the portion of the front end structure located directly below the first sacrificial portion to form the base, the method further includes:
forming a metal pad on the second back sheet layer.
The present invention also provides a microphone comprising:
a base;
a first backing plate layer straddling the base;
a first spacer layer on the first backsheet layer;
a diaphragm layer on the first spacer layer;
a second spacer layer on the diaphragm layer;
a second backsheet layer on the second spacer layer.
Optionally, for the microphone, the first backplate layer has a plurality of first sound holes, the diaphragm layer has a plurality of vibration holes, and the second backplate layer has a plurality of second sound holes.
Optionally, for the microphone, the diaphragm layer has a plurality of buffer struts and folds arranged at intervals.
Optionally, for the microphone, the second backplate layer has a plurality of buffer struts and a plurality of fastening struts, and the fastening struts are disposed in the second spacer layer.
Optionally, for the microphone, a metal pad located on the second backplate layer is further included.
The invention provides a method for manufacturing a microphone, which comprises the following steps: providing a front end structure; forming a first back-sheet layer on the front-end structure; forming a first spacer layer on the first back plane layer, the first spacer layer having a first sacrificial portion; forming a vibration film layer on the first spacer layer; forming a second spacer layer on the diaphragm layer, the second spacer layer having a second sacrificial portion corresponding to the first sacrificial portion; forming a second back plate layer on the second spacer layer; and removing the second sacrificial portion, the first sacrificial portion and the portion of the front end structure directly below the first sacrificial portion to form a pedestal. Therefore, the obtained microphone has a double-backboard structure, so that the amplification signal is increased, the APT performance is improved, and the microphone can be applied to various packaging modes; and the double-backboard structure can eliminate undercut of the spacing layer and the backboard, and reduce the influence of electrochemical corrosion, so that the microphone provided by the invention can well meet the requirements of various high-end products in the current market.
Drawings
FIG. 1 is a schematic diagram of a microphone;
FIG. 2 is a flow chart of a method of manufacturing a microphone according to an embodiment of the invention;
FIGS. 3-4 are schematic diagrams providing front end structures in accordance with an embodiment of the present invention;
FIG. 5 is a schematic view of forming a first backing layer in accordance with an embodiment of the present invention;
FIGS. 6-7 are schematic diagrams illustrating the formation of a first spacer layer in accordance with one embodiment of the present invention;
FIGS. 8-9 are schematic diagrams illustrating the formation of a vibrating membrane layer according to an embodiment of the present invention;
FIG. 10 is a schematic view of forming second spacers in accordance with an embodiment of the present invention;
FIGS. 11-12 are schematic views illustrating the formation of a second backing layer in accordance with an embodiment of the present invention;
fig. 13 is a schematic view of a microphone obtained in an embodiment of the present invention.
Detailed Description
The microphone and the method of making the same according to the invention will be described in more detail below with reference to the schematic drawings, in which preferred embodiments of the invention are shown, it being understood that a person skilled in the art may modify the invention described herein while still achieving the advantageous effects of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
The invention is described in more detail in the following paragraphs by way of example with reference to the accompanying drawings. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Referring to fig. 1, a schematic structural diagram of a microphone, specifically, a bottom mode (bottom type) microphone is shown, which includes a base 1, a diaphragm layer 2, a spacer layer 3 and a backplate layer 4. However, the inventor found in long-term research that, in the microphone with such a structure, the sound pressure is directly applied to the diaphragm layer 2, which may result in the breakage of the diaphragm layer 2, thereby failing the Air Pressure Test (APT).
Therefore, the inventor proposes a new microphone and a manufacturing method thereof, which adopts a structure of an upper back plate and a lower back plate to solve the problem.
The manufacturing method of the microphone of the invention comprises the following steps:
step S11, providing a front end structure;
step S12, forming a first back sheet layer on the front end structure;
step S13, forming a first spacer layer on the first back plate layer, the first spacer layer having a first sacrificial portion;
step S14, forming a vibration film layer on the first spacer layer;
step S15, forming a second spacer layer on the diaphragm layer, the second spacer layer having a second sacrificial portion corresponding to the first sacrificial portion;
step S16, forming a second back sheet layer on the second spacer; and
step S17, removing the second sacrificial portion, the first sacrificial portion and the portion of the front end structure directly below the first sacrificial portion to form a base.
The microphone and the method of manufacturing the same according to the present invention will be described in detail below.
Referring to fig. 2 and fig. 3 to fig. 13, a method for manufacturing a microphone of the present invention includes the following steps:
as shown in fig. 3-4, step S11 is performed to provide a front-end structure. Specifically, the front-end structure includes a substrate 10, where the substrate 10 may be monocrystalline silicon or polycrystalline silicon, and monocrystalline silicon is used in this embodiment. A first dielectric layer 11 is formed on the substrate 10, for example, the first dielectric layer 11 may be made of silicon nitride, and may be obtained by depositing and then performing photolithography etching. As shown in fig. 4, after the first dielectric layer 11 is formed, a second dielectric layer 12 is formed, where the second dielectric layer 12 may be made of silicon oxide and is surrounded by the first dielectric layer 11. The provision of the front-end structure can be accomplished in accordance with the prior art, and the present invention is not particularly limited.
Referring to fig. 5, step S12 is executed to form a first back plate layer 13 on the front end structure. Specifically, the first back plate layer 13 has a plurality of first acoustic holes 131, and the first back plate layer 13 may be made of polysilicon and deposited on the front end structure through a deposition process. Then, a photolithography etching process is performed to form a plurality of first acoustic holes 131 at a middle portion 132 of the first back plate layer 13, wherein the middle portion 132 refers to a portion located above the second dielectric layer 12, that is, an area where the plurality of first acoustic holes 131 are located is located on the second dielectric layer 12. The number and size of the first sound holes 131 may be determined according to actual requirements. For example, the first sound hole 131 has an aperture of 6 μm to 8 μm, and the first back plate layer 13 may have a thickness of 1.8 μm to 2.4 μm.
Referring to fig. 6-7, step S13 is performed to form a first spacer layer on the first back plate layer 13, where the first spacer layer has a first sacrificial portion 142. Specifically, the first sacrificial portion 142 covers the area where the plurality of first acoustic holes 131 are located, a first oxide layer 14 may be deposited first, the first oxide layer 14 covers the first back plate layer 13, as shown in fig. 6, a photolithography etching process is performed on the first oxide layer 14, trenches 141 are formed at two sides in the first oxide layer 14, and the trenches 141 are located above the first back plate layer 13; then, as shown in fig. 7, a first nitride layer 15 is formed in the trench 141; a planarization process, such as a Chemical Mechanical Polishing (CMP) process, is then performed to make the upper surfaces of the first oxide layer 14 and the first nitride layer 15 flush, and the first oxide layer 14 between the first nitride layers 15 serves as the first sacrificial portion 142.
The material of the first oxide layer 14 may be silicon oxide, the material of the first nitride layer 15 may be silicon nitride, and the width of the trench 141 may be 0.7 μm to 0.9 μm. And, after planarization, the first spacer layer has a thickness of 2.6 μm to 3.2 μm.
Referring to fig. 8-9, step S14 is executed to form a diaphragm layer 16 on the first spacer layer. Specifically, the diaphragm layer 16 has a plurality of vibration holes 163, and as shown in fig. 8, the first sacrificial portion 142 is patterned to form a plurality of first recesses 143 and second recesses 144; the formation of the plurality of first and second recesses 143 and 144 may be accomplished by photolithography, reflow (reflow), etching, and the like, which are known to those skilled in the art. In the present embodiment, the depth of the first recess 143 is deeper than the depth of the second recess 144, for example, the depth of the first recess 143 is 0.8 μm to 1.2 μm. The second recess 144 has a ring shape, and may have a diameter of 280 μm to 300 μm, a depth of 0.3 μm to 0.6 μm, and a width of 5.5 μm to 6.5 μm. Optionally, the first recess 143 is wide at the top and narrow at the bottom, and the second recess 144 has a uniform width at the top and bottom. The presence of the plurality of first and second recesses 143 and 144 changes the structure and shape of the subsequently formed vibration film layer 16, thereby improving the quality of the vibration film layer 16. It should be noted that the first recess 143 and the first sound hole 131 in fig. 8 are only schematic, but are for better showing the structure of the first recess 143 and the second recess 144, and it cannot be understood that the size of the first recess 143 and the second recess 144 is larger than that of the first sound hole 131, and other views (and the subsequent third recess 171) are the same.
Referring to fig. 9, a diaphragm material layer is deposited to cover the upper surface and the sidewall of the first spacer layer, and one end of the diaphragm material layer is exposed out of the first back plate layer 13, and the other end covers the first back plate layer 13 and the front end structure; then, a plurality of vibration holes 163 are formed on the vibration film material layer to expose the first oxide layer 14 and the first nitride layer 15, and the vibration film layer 16 is obtained, and the hole diameter of the vibration holes 163 may be 1 μm to 2 μm. The vibration holes 163 are beneficial to acid liquor permeation during subsequent etching, buffer the vibration film layer 16, and perform testing and other functions.
As shown in fig. 8 to 9, the buffer support 162 is formed at the position of the diaphragm layer 16 corresponding to the first recess 143, and the corrugation 161 is formed at the position of the diaphragm layer 16 corresponding to the second recess 144. The cushioning struts 162 and corrugations 161 are of a gauge that conforms to the corresponding first and second recesses 143, 144. Thus, the buffer strut 162 may prevent contact between the diaphragm layer 16 and the first back plate layer 13, and the corrugation 161 may improve performance of the diaphragm layer 16 and prevent damage.
Referring to fig. 10, step S15 is performed to form a second spacer layer on the diaphragm layer 16, where the second spacer layer has a second sacrificial portion 17, and the second sacrificial portion 17 corresponds to the first sacrificial portion. Specifically, a second oxide layer may be deposited first, and the second oxide layer covers the vibration film layer 16; then etching the second oxide layer, leaving a portion corresponding to the first sacrificial portion as a second sacrificial portion 17; followed by the deposition of a second nitride layer 18 on both sides of said second sacrificial portion 17; a planarization process, such as a CMP process, is performed so that the upper surfaces of the second sacrificial portion 17 and the second nitride layer 18 are flush.
The material of the second oxide layer may be selected to be silicon oxide, the material of the second nitride layer 18 may be selected to be silicon nitride, and the thicknesses of the second oxide layer and the second nitride layer may correspond to each other (same or different) respectively (or may be designed according to actual requirements). And, after planarization, the second spacer layer has a thickness of 2.6 μm to 3.2 μm.
Referring to fig. 11 to 12, step S16 is performed to form a second back plate layer 19 on the second spacer. Specifically, the second back plate layer 19 has a plurality of second sound holes 191, and the second sacrificial portion 17 may be first patterned to form a plurality of third recesses 171; and, the second nitride layer may be simultaneously patterned to form a plurality of fourth recesses 181; for example, the third recesses 171 have a depth of 0.8 μm to 1.2 μm, and the fourth recesses 181 have a depth of 0.3 μm to 0.6 μm. Optionally, the third recess 171 is wide at the top and narrow at the bottom, and the fourth recess 181 is uniform in width at the top and bottom. The presence of the plurality of third recesses 171 and fourth recesses 181 will change the structure and shape of the subsequently formed second backsheet layer 19, thereby improving the quality of the second backsheet layer 19. Then, depositing a second back plate material layer, covering the upper surface and the side wall of the second spacer layer, and covering the vibration film layer 16, wherein one end of the second back plate material layer is connected with the first back plate layer 13, and the other end of the second back plate material layer is isolated from the first back plate layer 13 through the vibration film layer 16; thereafter, a plurality of second sound holes 191 are formed on the second back sheet material layer to expose the second sacrificial portions 17 and the second nitride layer 18, obtaining the second back sheet layer 19. The second sound hole 191 may be sized to correspond to the first sound hole 131, and the thickness of the second back plate layer 19 above the second spacer layer may correspond to the first back plate layer 13.
As shown in fig. 11 to 12, the second back plate layer 19 is formed with a buffer strut 192 corresponding to the third recess 171, the second back plate layer 19 is formed with a fastening strut 193 corresponding to the fourth recess 181, and the buffer strut 192 and the fastening strut 193 have the same size as the corresponding third recess 171 and fourth recess 181. Thus, the buffer support 192 prevents the contact between the diaphragm layer 16 and the second backplate layer 19, and the fastening support 193 makes the second backplate layer 19 more stable and prevents the separation and damage.
With continued reference to fig. 12, a metal pad 20 is formed on the second back plate layer 19, and the material of the metal pad 20 may be, for example, copper, chromium, etc., which can be completed by using the prior art.
Referring to fig. 13, step S17 is executed to remove the second sacrificial portion, the first sacrificial portion and the portion of the front end structure directly under the first sacrificial portion to form a base. Specifically, the second sacrificial portion and the first sacrificial portion may be removed through the second sound hole 191, the vibration hole 163 and the first sound hole 131, and a portion of the front end structure located right below the region where the plurality of first sound holes 131 are located (i.e., the middle portion 132 of the first back plate layer 13) may be removed, and the second dielectric layer and the substrate below the second dielectric layer may be specifically removed for the front end structure, so as to form the base 10'. This process may be accomplished using a chemical etch.
With reference to fig. 13, through the above steps, a microphone obtained by the present invention includes:
a base 10' comprising a substrate and a first dielectric layer 11;
a first back plate layer 13 straddling the base 10', the first back plate layer 13 having a plurality of first sound holes 131, the plurality of first sound holes 131 being located in a central portion 132 of the first back plate layer 13 and located in a hollow portion in the center of the base 10';
the first isolating layer is positioned on the first back plate layer 13, corresponds to the upper part of the base 10', and comprises a first oxidizing layer 14 and a first medium layer 15;
a vibration film layer 16 positioned on the first spacing layer, wherein the vibration film layer 16 has a plurality of vibration holes 163, and a plurality of buffer struts 162 and folds 161 arranged at intervals;
a second spacer layer on the diaphragm layer 16, the second spacer layer corresponding to the upper side of the base 10', the second spacer layer including a second dielectric layer 18;
a second backplate layer 19 on the second spacer layer, the second backplate layer 19 having a plurality of second sound holes 191, the second backplate 19 further having a plurality of buffer posts 192 and a plurality of fastening posts 193, the fastening posts 193 being disposed in the second spacer layer; and
a metal pad 20 on the second backing layer 19.
In summary, the method for manufacturing a microphone provided by the present invention includes: providing a front end structure; forming a first back-sheet layer on the front-end structure; forming a first spacer layer on the first back plane layer, the first spacer layer having a first sacrificial portion; forming a vibration film layer on the first spacer layer; forming a second spacer layer on the diaphragm layer, the second spacer layer having a second sacrificial portion corresponding to the first sacrificial portion; forming a second back plate layer on the second spacer layer; and removing the second sacrificial portion, the first sacrificial portion and the portion of the front end structure directly below the first sacrificial portion to form a pedestal. Therefore, the obtained microphone has a double-backboard structure, so that the amplification signal is increased, the APT performance is improved, and the microphone can be applied to various packaging modes; and the double-backboard structure can eliminate undercut of the spacing layer and the backboard, and reduce the influence of electrochemical corrosion, so that the microphone provided by the invention can well meet the requirements of various high-end products in the current market.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (21)
1. A method of making a microphone, comprising:
providing a front end structure;
forming a first back-sheet layer on the front-end structure;
forming a first spacer layer on the first back plane layer, the first spacer layer having a first sacrificial portion;
forming a vibration film layer on the first spacer layer;
forming a second spacer layer on the diaphragm layer, the second spacer layer having a second sacrificial portion corresponding to the first sacrificial portion;
forming a second back plate layer on the second spacer layer; and
and removing the second sacrificial part, the first sacrificial part and the part of the front-end structure which is positioned right below the first sacrificial part to form a base.
2. The method of claim 1, wherein the front-end structure comprises a substrate, a first dielectric layer on the substrate, and a second dielectric layer on the substrate surrounded by the first dielectric layer.
3. The method of claim 2, wherein the first backplate layer has a plurality of first sound holes, the diaphragm layer has a plurality of vibration holes, the second backplate layer has a plurality of second sound holes, and the first sacrificial portion covers areas where the plurality of first sound holes are located.
4. The method of claim 3, wherein the first plurality of acoustic holes are located on the second dielectric layer.
5. The method of fabricating a microphone according to claim 4 wherein forming a first spacer layer on the first backplate layer, the first spacer layer having a first sacrificial portion comprises:
depositing a first oxide layer, wherein the first oxide layer covers the first back plate layer;
forming grooves on two sides of the first oxide layer, wherein the grooves are located above the first medium layer;
forming a first nitride layer in the trench;
and carrying out a planarization process to enable the upper surfaces of the first oxide layer and the first nitride layer to be flush, wherein the first oxide layer between the first nitride layers is used as the first sacrificial part.
6. The method of manufacturing a microphone according to claim 5, wherein the step of forming a diaphragm layer on the first spacer layer comprises:
patterning the first sacrificial portion to form a plurality of first recesses and second recesses;
depositing a vibration film material layer, wherein the vibration film material layer covers the upper surface and the side wall of the first spacing layer, one end of the vibration film material layer is exposed out of the first back plate layer, and the other end of the vibration film material layer covers the first back plate layer and the front end structure;
and forming a plurality of vibration holes on the vibration film material layer, and exposing the first oxide layer and the first nitride layer to obtain the vibration film layer.
7. The method of claim 6, wherein the first recess is deeper than the second recess.
8. The method of claim 6, wherein the first recess has a wide top and a narrow bottom, and the second recess has a ring shape with a uniform top and bottom width.
9. The method of claim 8, wherein the diaphragm layer forms a buffer support corresponding to the first recess, and the diaphragm layer forms a corrugation corresponding to the second recess.
10. The method of manufacturing a microphone according to claim 5, wherein forming a second spacer layer on the diaphragm layer, the second spacer layer having a second sacrificial portion, the second sacrificial portion corresponding to the first sacrificial portion comprises:
depositing a second oxide layer, wherein the second oxide layer covers the vibration film layer;
etching the second oxide layer, and reserving a part corresponding to the first sacrificial part as a second sacrificial part;
depositing a second nitride layer on both sides of the second sacrificial portion;
and carrying out a planarization process so that the second sacrificial part and the upper surface of the second nitride layer are flush.
11. The method of claim 10, wherein the step of forming a second backplate layer over the second spacer layer comprises:
patterning the second sacrificial portion to form a plurality of third recesses;
depositing a second back plate material layer, covering the upper surface and the side wall of the second interlayer, and covering the vibration film layer, wherein one end of the second back plate material layer is connected with the first back plate layer, and the other end of the second back plate material layer is isolated from the first back plate layer through the vibration film layer;
and forming a plurality of second sound holes on the second back plate material layer to expose the second sacrificial part and the second nitride layer to obtain the second back plate layer.
12. The method of claim 11, wherein the third recess is wider at the top and narrower at the bottom, and has a first depth.
13. The method of claim 12, wherein the second backplate layer forms a buffer post corresponding to the third recess.
14. The method of claim 11, wherein patterning the second sacrificial portion to form a plurality of third recesses further comprises:
and patterning the second nitride layer to form a plurality of fourth recesses.
15. The method of claim 14, wherein the second backplate layer forms a fastening post corresponding to the fourth recess.
16. The method of claim 1, wherein after forming a second backplate layer on the second spacer layer, prior to removing the second sacrificial portion, the first sacrificial portion, and the portion of the front end structure directly below the first sacrificial portion to form the base, further comprising:
forming a metal pad on the second back sheet layer.
17. A microphone, comprising:
a base;
a first backing plate layer straddling the base;
a first spacer layer on the first backsheet layer;
a diaphragm layer on the first spacer layer, the diaphragm layer having a plurality of vibration holes;
a second spacer layer on the diaphragm layer;
a second backsheet layer on the second spacer layer.
18. The microphone of claim 17, wherein the first backplate layer has a plurality of first sound apertures and the second backplate layer has a plurality of second sound apertures.
19. The microphone of claim 17, wherein the diaphragm layer has a plurality of buffer struts and corrugations arranged at intervals.
20. The microphone of claim 17, wherein the second backplate layer has a plurality of cushioning struts and a plurality of fastening struts, the fastening struts being disposed in the second spacer layer.
21. The microphone of claim 17, further comprising a metal pad on the second backplate layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710126748.XA CN108540910B (en) | 2017-03-06 | 2017-03-06 | Microphone and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710126748.XA CN108540910B (en) | 2017-03-06 | 2017-03-06 | Microphone and manufacturing method thereof |
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| CN102158787A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | MEMS (Micro Electro Mechanical System) microphone and pressure integration sensor, and manufacturing method thereof |
| CN102792715A (en) * | 2009-08-28 | 2012-11-21 | 美国亚德诺半导体公司 | Dual single-crystal backplate microphone system and method of fabricating same |
| CN104418289A (en) * | 2013-08-26 | 2015-03-18 | 英飞凌科技股份有限公司 | MEMS device |
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| CN103402160B (en) * | 2013-07-10 | 2016-12-28 | 瑞声声学科技(深圳)有限公司 | MEMS microphone and operation control method thereof |
| CN104113810A (en) * | 2014-07-18 | 2014-10-22 | 瑞声声学科技(深圳)有限公司 | MEMS microphone and preparation method thereof and electronic device |
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| CN102792715A (en) * | 2009-08-28 | 2012-11-21 | 美国亚德诺半导体公司 | Dual single-crystal backplate microphone system and method of fabricating same |
| CN102158787A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | MEMS (Micro Electro Mechanical System) microphone and pressure integration sensor, and manufacturing method thereof |
| CN104418289A (en) * | 2013-08-26 | 2015-03-18 | 英飞凌科技股份有限公司 | MEMS device |
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