CN102157623A - Stripping transfer method of substrate of thin film solar cell - Google Patents
Stripping transfer method of substrate of thin film solar cell Download PDFInfo
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- CN102157623A CN102157623A CN2011100540311A CN201110054031A CN102157623A CN 102157623 A CN102157623 A CN 102157623A CN 2011100540311 A CN2011100540311 A CN 2011100540311A CN 201110054031 A CN201110054031 A CN 201110054031A CN 102157623 A CN102157623 A CN 102157623A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a stripping transfer technology of a substrate of a thin film solar cell, particularly comprising the following steps of: firstly depositing and growing a corrosion sacrifice layer on a rigid substrate; then depositing and growing a solar cell layer on the completely grown corrosion sacrifice layer; heating black waxes for thawing on the solar cell layer, and naturally condensing to normal temperature to fix on the surface of the solar cell layer to form a support layer; placing the solar cell layer with the support layer in selective corrosive liquid to soak at the normal temperature for 6-8 hours so that the corrosion sacrifice layer positioned between the solar cell layer and the rigid substrate is completely corroded to be eliminated; transferring and fixing the solar cell layer stripped from the rigid substrate to a flexible substrate under the action of the support layer; and finally dissolving to eliminate the support layer fixed on the surface of the solar cell layer by adopting a dissolving agent. The invention realizes the lightweight and the flexibleness of the thin film solar cell, thereby enlarging the application range of the thin film solar cell.
Description
Technical field
The present invention relates to a kind of thin-film solar cells, or rather, provide a kind of transfer method of peeling off of thin-film solar cells substrate, belong to the technical field of thin-film solar cells and manufacturing process thereof.
Background technology
Existing volume production semiconductor solar cell, the main material such as polysilicon, amorphous silicon that adopt, for guaranteeing the high-flatness of hull cell technological requirement, guarantee the uniformity and the consistency of precipitation process middle plateform electrode battery, its substrate of the hull cell of making generally adopts rigid material.Because use hard substrate, causing this hull cell is rigidity, can not satisfy the application that has on arcuate surfaces such as the non-planar material such as balloon, dirigible, has limited its scope of application.On the other hand,, have higher density and bigger volume, cause the hull cell overall weight bigger because the material of hard substrate is generally glass, resin, metal or other rigid materials.Traditional thin-film solar cells epitaxial loayer only has about 10 μ m effectively, and the substrate that supports has 300-500 μ m thick, and it is invalid making the weight of this hull cell more than 95%.How effective layer of thin-film solar cells can be peeled, and be transferred on the more frivolous flexible substrate, alleviate hull cell weight, realize the lightweight and the flexibility of hull cell, just become scholar's problem demanding prompt solution.
Summary of the invention
For overcoming the above problems, the invention provides a kind of transfer method of peeling off of thin-film solar cells substrate.This thin-film solar cells substrate peel off transfer method, its concrete steps are as follows:
(1), at first on rigid substrate growth deposit one deck corrosion sacrifice layer;
(2), deposition growing goes out one deck solar cell layer on the good corrosion sacrifice layer of growing; The bottom of solar cell layer is a separator;
(3), then heat solar cell layer and the supporting layer of having produced, connect a supporting layer on the surface of this solar cell layer; Supporting layer melts by being heated and is connected with solar cell layer, stops to heat, is fixed on the solar cell laminar surface after being condensed to normal temperature naturally;
(4), the solar cell that will have a supporting layer is placed in plastics or the poly-tetrafluoro beaker, bringing Selection In property corrosive liquid soaks, and makes corrosion sacrifice layer between solar cell layer and the rigid substrate by erosion removal fully;
(5), the solar cell layer from rigid substrate, peeled off under the effect of supporting layer, shift and be fixed on the flexible substrate; Adopt lytic agent that the supporting layer dissolving of being fixed in the solar cell laminar surface is removed at last.
Can realize peeling off and shifting of thin-film solar cells substrate through above step, obtain the thin-film solar cells of flexible substrate.
Wherein, described deposition growing process can make the material layer of growth deposition that higher uniformity and evenness are arranged all by using molecular beam epitaxy or metal-organic chemical vapor deposition equipment method to realize by this method.
Solar cell is the GaAs multijunction solar cell among the present invention;
The corrosion sacrificial layer material is an aluminium arsenide among the present invention.Different thin-film solar cells is used different corrosion expendable materials, and for above-mentioned gallium arsenide solar cell, the preferred aluminium arsenide of corrosion sacrifice layer is the corrosion sacrificial layer material.
Described solar cell layer thickness is 5-10 μ m, and the corrosion sacrificial layer thickness is 0.5 μ m.
The separator of solar cell layer bottom is semi insulating semiconductor material or semiconductor p-n junction; Separator can be kept apart thin-film solar cells inside and corrosion sacrifice layer, avoids subsequent operation that battery performance is exerted an influence.
Described selective corrosion liquid is hydrofluoric acid.At normal temperatures, hydrofluoric acid has severe corrosive, can realize peeling off of solar cell layer and rigid substrate in simple reaction unit the corrosion of corrosion sacrificial layer material aluminium arsenide fully, the condition that the corrosion sacrifice layer is removed in selective corrosion liquid immersion here is to soak at normal temperatures 6-8 hour.
Described support layer material is black wax or gel, and wherein gel is to be the macromolecular material of solid under a kind of normal temperature.Black wax and gel are solid at normal temperatures, are heated that it is temperature required not high to melt, and with the related semiconductor process compatible, be easy to be connected to the thin-film solar cells surface, can play the excellent support effect.
Described flexible substrate material is polytetrafluoroethylene film, polyimide film or metallic film.These flexible materials were realized with being connected by Van der Waals force or industrial bonding agent mode of hull cell material layer.So just realized solar cell layer is transferred on the flexible substrate.
Described lytic agent is a kind of cerate that removes, and is a kind of dedicated solvent that is used for dissolving wax, can remove black wax or gel attached to the thin-film solar cells surface clean.
Beneficial effect of the present invention is: the invention provides a kind of transfer techniques of peeling off of thin-film solar cells substrate, realize the lightweight and the flexibility of battery.Compare with rigid substrate, flexible substrate density is less, proportion is light, shape can the corresponding change with the shape of concrete Material Used, can satisfy the application that has on arcuate surfaces such as the non-planar material such as balloon, dirigible, make the thin-film solar cells of producing with transfer techniques by peeling off of substrate guarantee that realization is more frivolous under the high-flatness prerequisite, range of application is more extensive.
Description of drawings
Fig. 1 is the thin-film solar cells layers of material schematic diagram of deposition growing on rigid substrate successively.
Fig. 2 is the schematic diagram of solar cell layer and rigid substrate stripping process.
Fig. 3 is the schematic diagram that thin-film solar cells substrate-transfer and final finished form.
Embodiment
Below in conjunction with description of drawings is that the specific embodiment of the invention specifies.
As Fig. 1 to shown in Figure 3, a kind of thin-film solar cells substrate peel off transfer method, its concrete steps are as follows:
1, select a kind of rigid substrate 1, rigid substrate 1 commonly used is the GaAs substrate, and thickness is between 300-500 μ m, and its smoothness and hardness can guarantee that the superincumbent material layer of deposition growing has high-flatness and precision.
On rigid substrate 1, forming a layer thickness is the corrosion sacrifice layer 2 of 0.5 μ m material aluminium arsenide (AlAs) deposition growing for employing molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition equipment (MOCVD) method.Corrosion sacrifice layer 2 is not the structure that the finished product battery is comprised, and is for realizing the follow-up material layer that transfer techniques inserts of peeling off.
2, the making of solar cell layer 3.This thin-film solar cells bottom comprises that also one deck is used for the separator of separating with corrosion sacrifice layer 26, therefore adopts molecular beam epitaxies (MBE) or the growth of metal-organic chemical vapor deposition equipment (MOCVD) method to deposit layer of semiconductor p-n junction or semi insulating semiconductor material as separator 6 earlier on corrosion sacrifice layer 2 surfaces.
Adopt same deposition growing method to produce the thin-film solar cells complete structure then on separator 6, forming a thickness is the solar cell layer 3 of 5-10 μ m.The solar cell layer of made refers in particular to a kind of GaAs multijunction solar cell layer 3 among the present invention, and the multijunction solar cell layer 3 that this semi-conducting material is made can repeatedly absorb the segmentation of sunlight, improves photoelectric conversion efficiency.
3, the making of supporting layer 4.Because solar cell layer 3 is very thin, and 5-10 μ m is only arranged, after it was peeled off from rigid substrate, if there is not rigid support, film can be very frangible, can not carry out operations such as clamping and transfer.Therefore, at first need to use support layer material to support.Specific practice is: solar cell layer 3 and supporting layer 4 that heating has been produced, then support layer material is melted in solar cell layer 3 surfaces, and be connected with solar cell layer 3.Stop heating, support layer material is set in solar cell layer 3 surfaces and forms supporting layer 4 behind the natural cooling.
The material that supporting layer 4 of the present invention adopts is black wax (Apiezon wax) or gel, and wherein gel is to be the macromolecular material of solid under a kind of normal temperature, and what adopt among the present invention is the black wax of the Wax W series of Apiezon.Two kinds of support layer material all have to be heated easily melts, and is cooled to the characteristics that normal temperature becomes solid again, and can be good compatible with the thin-film solar cells material, has special-purpose lytic agent conveniently to remove, thus among the present invention preferred black wax or gel as supporting layer 4 materials.
4, corrosion removal of sacrifice layer 2 and peeling off of rigid substrate 1.The solar cell layer 3 that will have supporting layer 4 is statically placed in plastics or the poly-tetrafluoro beaker, and bringing Selection In property corrosive liquid soaked 6-8 hour at normal temperatures.At the corrosion preferred hydrofluoric acid of sacrifice layer 2 materials (HF) are as selective corrosion liquid among the present invention, it has severe corrosive, can chemically react with the aluminium arsenide (AlAs) in the corrosion sacrifice layer 2, AlAs is dissolved among the HF and from rigid substrate 1 breaks away from.Meanwhile, thin-film solar cells 3 comprises that bottom separator 6 is not dissolved in HF, and the structure of assurance solar cell layer 3 is not subjected to the corrosion of HF.Finally be corroded fully along with the continuous dissolving of corroding sacrifice layer 2 breaks away from also, also realize peeling off fully of solar cell layer 3 and rigid substrate 1 thereupon.Its corrosion sacrifice layer 2 materials of different thin-film solar cells are also different, and therefore the selective corrosion liquid of selecting for use is also different, and selective corrosion liquid is wanted fast dissolved corrosion sacrifice layer 2 and can not injured solar cell layer 3 in principle.
5, the removal of the transfer of solar cell layer 3 and supporting layer 4.The solar cell layer of peeling off from rigid substrate 13 shifts and is fixed on the flexible substrate 5 under the effect of supporting layer 4, adopts lytic agent that supporting layer 4 dissolvings of being fixed in solar cell layer 3 surfaces are removed at last.
Wherein, flexible substrate 5 is metallic films such as polytetrafluoroethylene film, polyimide film or aluminium foil.These flexible materials 5 realize that with being connected by Van der Waals force or industrial bonding agent mode of solar cell layer employed industrial bonding agent is an Epoxy Tech 301-2 glue among the present invention.
Lytic agent wherein is a kind of cerate that removes, and the dedicated solvent of dissolving wax can be removed black wax or gel attached to solar cell layer 3 surfaces clean.
Can realize peeling off and shifting of thin-film solar cells substrate through above step, obtain thin-film solar cells with flexible substrate 5.Rigid substrate 1 after peeling off can be recycled, and can be used for the material growth after the recovery once more.
Claims (10)
- A thin-film solar cells substrate peel off transfer method, its concrete steps are as follows:(1), at first on rigid substrate deposition growing go out one deck corrosion sacrifice layer;(2), deposition growing goes out one deck solar cell layer on the good corrosion sacrifice layer of growing; The bottom of solar cell layer is a separator;(3), establish a supporting layer, heating solar battery layers and supporting layer, supporting layer melt by being heated and are connected with solar cell layer, stop to heat, be fixed on the solar cell laminar surface after being condensed to normal temperature naturally on the surface of solar cell layer;(4), the solar cell that will have a supporting layer is placed in plastics or the poly-tetrafluoro beaker, bringing Selection In property corrosive liquid soaks, and makes corrosion sacrifice layer between solar cell layer and the rigid substrate by erosion removal fully;(5), the solar cell layer from rigid substrate, peeled off under the effect of supporting layer, shift and be fixed on the flexible substrate; Adopt lytic agent that the supporting layer dissolving of being fixed in the solar cell laminar surface is removed at last.
- 2. the transfer method of peeling off according to claim 1 is characterized in that: described deposition growing process is all by using molecular beam epitaxy or metal-organic chemical vapor deposition equipment method to realize.
- 3. the transfer method of peeling off according to claim 1 is characterized in that: described solar cell is the GaAs multijunction solar cell; Described corrosion sacrificial layer material is an aluminium arsenide; Described separator is semi insulating semiconductor material or semiconductor p-n junction; Described selective corrosion liquid is hydrofluoric acid.
- 4. the transfer method of peeling off according to claim 3 is characterized in that: it is to soak at normal temperatures 6-8 hour that described selective corrosion liquid soaks the condition of removing the corrosion sacrifice layer.
- 5. the transfer method of peeling off according to claim 1 is characterized in that: described solar cell layer thickness is 5-10 μ m, and described corrosion sacrificial layer thickness is 0.5 μ m.
- 6. the transfer method of peeling off according to claim 1 is characterized in that: described support layer material is black wax or gel.
- 7. the transfer method of peeling off according to claim 6 is characterized in that: described gel is to be the macromolecular material of solid under a kind of normal temperature.
- 8. the transfer method of peeling off according to claim 1 is characterized in that: described flexible substrate material is polytetrafluoroethylene film, polyimide film or metallic film.
- 9. the transfer method of peeling off according to claim 8 is characterized in that: described flexible material was realized with being connected by Van der Waals force or industrial bonding agent mode of solar cell material layer.
- 10. the transfer method of peeling off according to claim 1 is characterized in that: described lytic agent is a kind of cerate that removes.
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Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102790098A (en) * | 2012-07-19 | 2012-11-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Back reflective solar battery and manufacturing method thereof |
| CN103035775A (en) * | 2011-09-29 | 2013-04-10 | 北儒精密股份有限公司 | Solar battery and manufacturing method thereof |
| CN103872178A (en) * | 2014-02-28 | 2014-06-18 | 江苏武进汉能光伏有限公司 | Thin-film solar cell and assembly, and preparation methods of thin-film solar cell and assembly |
| CN104205364A (en) * | 2012-03-28 | 2014-12-10 | 索泰克公司 | Manufacture of multijunction solar cell devices |
| CN104205362A (en) * | 2012-03-28 | 2014-12-10 | 索泰克公司 | Manufacture of multijunction solar cell devices |
| CN104218106A (en) * | 2013-05-31 | 2014-12-17 | 台积太阳能股份有限公司 | Solar cell or tandem solar cell and method of forming same |
| CN104465819A (en) * | 2014-11-28 | 2015-03-25 | 瑞德兴阳新能源技术有限公司 | IMM structure solar cell based on oxidation stripping technology and preparation method thereof |
| CN104538497A (en) * | 2014-12-29 | 2015-04-22 | 苏州强明光电有限公司 | Thin film solar cell and preparation method thereof |
| CN104993011A (en) * | 2015-05-25 | 2015-10-21 | 中国电子科技集团公司第十八研究所 | Technology for preparing thin-film solar cells by use of selective corrosion substrate stripping technology |
| CN105845784A (en) * | 2016-06-17 | 2016-08-10 | 上海卓友化工科技有限公司 | Stripping equipment for stripping thin-film solar cell from rigid substrate |
| CN106373867A (en) * | 2016-09-27 | 2017-02-01 | 中国电子科技集团公司第十八研究所 | Method for transferring gallium arsenide epitaxial layer to organic flexible substrate |
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