CN107083544B - A kind of processing method and processing unit of inspection substrate - Google Patents
A kind of processing method and processing unit of inspection substrate Download PDFInfo
- Publication number
- CN107083544B CN107083544B CN201710262131.0A CN201710262131A CN107083544B CN 107083544 B CN107083544 B CN 107083544B CN 201710262131 A CN201710262131 A CN 201710262131A CN 107083544 B CN107083544 B CN 107083544B
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- China
- Prior art keywords
- film layer
- inspection substrate
- inspection
- sacrifice
- substrate
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Abstract
The present invention provides the processing method and processing unit of a kind of inspection substrate.Processing method includes: the setting sacrifice film layer on inspection substrate；It is formed in the sacrifice film layer using plasma enhanced chemical vapor deposition method and examines film layer；After testing to the formation situation for examining film layer, the sacrifice film layer is removed from the inspection substrate, so that the inspection film layer is separated with the inspection substrate；Recycle the inspection substrate.The solution of the present invention first deposits the sacrifice film layer for being easy to separate with inspection substrate on inspection substrate, gas ions enhancing chemical vapour deposition technique is reused later produces inspection film layer for examining chemical meteorology deposition technique, after the completion of verifying, it only needs to sacrifice film layer to separate with inspection substrate, clean inspection substrate can be recycled again, inspection substrate is continued to use in examining next time, to save cost of manufacture, therefore there is very high practical value.
Description
Technical field
The present invention relates to the production fields of display product, particularly relate to the processing method and processing dress of a kind of inspection substrate
It sets.
Background technique
It is nonmetallic exhausted that existing display base plate manufacture craft generally uses chemical vapour deposition technique to make on underlay substrate
Edge film.Before chemical vapor depsotition equipment carries out typical products in mass production production, the chemical meteorology deposition condition according to product is needed,
Trial-production work is carried out on inspection substrate, is had with gas-condition, mechanical action, technological parameter etc. in assessment equipment without exception, it is ensured that
The stability of product when volume production.
Currently, chemical vapor deposition uses radio-frequency power supply, so metal and other materials will lead to Arcing (exception
Electric discharge phenomena), Arcing influences power supply and the indoor cleanliness of chamber, therefore the material of current inspection substrate and product substrate is only
It can choose glass.
After the completion of testing stage, it is deposited with the glass substrate of non-metallic insulation film, can not be used in examining next time,
The problem of causing not recoverable.
Summary of the invention
Expendable problem that present invention aim to address glass substrates after carrying out chemical meteorology deposition test.
To achieve the above object, on the one hand, the embodiment of the present invention provides a kind of processing method of inspection substrate, comprising:
Film layer is sacrificed in setting on inspection substrate；
It is formed in the sacrifice film layer using plasma enhanced chemical vapor deposition method and examines film layer；
After testing to the formation situation for examining film layer, the expendable film is removed from the inspection substrate
Layer, so that the inspection film layer is separated with the inspection substrate；
Recycle the inspection substrate.
Wherein, the sacrifice film layer is nonmetallic materials and the liquid that can be etched etches；
The sacrifice film layer is removed from inspection substrate, comprising:
Using the etching liquid for sacrificing film layer, the sacrifice film layer is etched away.
Wherein, film layer is sacrificed in setting on inspection substrate, comprising:
Film layer will be sacrificed to be fitted on the inspection substrate；
The sacrifice film layer is removed from inspection substrate, comprising:
Using mechanically decoupled mode, the sacrifice film layer is separated with the inspection substrate.
Wherein, film layer will be sacrificed to be fitted on the inspection substrate, comprising:
The second surface of the first surface and the inspection substrate of sacrificing film layer is subjected to amination processing respectively, is made described
First surface and the second surface adhere to amino；
The first surface for sacrificing film layer is bonded with the second surface of the inspection substrate.
Wherein, before film layer is sacrificed in setting on inspection substrate, the method also includes:
The inspection substrate is cleaned.Wherein, after the sacrifice film layer is removed from the inspection substrate, recycling
Before the inspection substrate, the method also includes:
Plasma irradiating is carried out to the inspection substrate, to remove the residue on the inspection substrate.
On the other hand, the embodiment of the present invention also provides a kind of processing equipment of inspection substrate, comprising:
Setup module, for the setting sacrifice film layer on inspection substrate；
Deposition module examines film for being formed in the sacrifice film layer using plasma enhanced chemical vapor deposition method
Layer；
Module is removed, for getting on after testing to the formation situation for examining film layer from the inspection substrate
Except the sacrifice film layer, so that the inspection film layer is separated with the inspection substrate；
Recycling module, for recycling the inspection substrate.
Wherein, the sacrifice film layer is nonmetallic materials and the liquid that can be etched etches；
The removal module includes:
First removal submodule, for etching away the sacrifice film layer using the etching liquid for sacrificing film layer.
Wherein, the setup module is specifically used for, and will sacrifice film layer and is fitted on the inspection substrate；
The removal module includes:
Second removal submodule carries out the sacrifice film layer and the inspection substrate for using mechanically decoupled mode
Separation.
Wherein, the setup module includes:
Amination submodule, for carrying out the second surface of the first surface and the inspection substrate of sacrificing film layer respectively
Amination processing makes the first surface and the second surface adhere to amino；
It is bonded submodule, for the first surface for sacrificing film layer to be bonded with the second surface of the inspection substrate.
Above scheme of the invention has the following beneficial effects:
The solution of the present invention first deposits the sacrifice film layer for being easy to separate with inspection substrate on inspection substrate, makes again later
The inspection film layer for examining chemical meteorology deposition technique is produced with gas ions enhancing chemical vapour deposition technique, is completed in verifying
Afterwards, it is only necessary to film layer will be sacrificed and separated with inspection substrate, clean inspection substrate can be recycled again, so that inspection substrate can be with
It is continued to use in examining next time, to save cost of manufacture, therefore there is very high practical value.
Detailed description of the invention
Fig. 1 is the step schematic diagram of the processing method of inspection substrate of the invention；
Fig. 2A-Fig. 2 E is the detail flowchart of the processing method of inspection substrate of the invention in practical applications；
Fig. 3 is the schematic diagram being bonded between inspection substrate of the invention and sacrifice film layer by amino；
Fig. 4 is the structural schematic diagram of the processing unit of inspection substrate of the invention.
Specific embodiment
To keep the technical problem to be solved in the present invention, technical solution and advantage clearer, below in conjunction with attached drawing and tool
Body embodiment is described in detail.
For glass substrate, expendable problem, the present invention provide a kind of solution party after chemical meteorology deposition test
Case.
On the one hand, the embodiment of the present invention provides a kind of processing method of inspection substrate, as shown in Figure 1, comprising:
Step 11, film layer is sacrificed in setting on inspection substrate；
Step 12, it is formed on sacrificing film layer using plasma enhanced chemical vapor deposition method and examines film layer；
Step 13, after to examining the formation situation of film layer to test, the sacrifice film layer is removed from inspection substrate,
So that film layer is examined to separate with inspection substrate；
Step 14, inspection substrate is recycled.
The processing method of the present embodiment first deposits the sacrifice film layer for being easy to separate with inspection substrate on inspection substrate, it
Gas ions enhancing chemical vapour deposition technique is reused afterwards and produces inspection film layer for examining chemical meteorology deposition technique, is being tested
After the completion of card, it is only necessary to film layer will be sacrificed and separated with inspection substrate, clean inspection substrate can be recycled again, so that examining base
Plate can continue to use in examining next time, to save cost of manufacture, therefore have very high practical value.
It describes in detail below to processing method of the mode that is implemented in combination with to the present embodiment.
Implementation one
The processing method of this implementation one includes:
Step 21, as shown in Figure 2 A, inspection substrate 1 is cleaned, to remove the foreign matter on inspection substrate；
In this step, cleaning way is not unique, be also not limited to only clean it is primary, can be with as exemplary introduction
1 surface of inspection substrate is cleaned using deionized water, to achieve the purpose that remove foreign matter；For another example can also use
Plasma (plasma technology) is irradiated inspection substrate, removes the organic residue on inspection substrate；
Step 22, as shown in Figure 2 B, nonmetallic materials are deposited on inspection substrate, sacrifice film layer 2 to be formed；It needs to give
Illustrate, which is to sacrifice the preferred but nonessential material of film layer 2, its advantage is that can be in chemical vapor deposition
During the phenomenon that avoiding the occurrence of arcing；
As exemplary introduction, in practical applications, organic matter is can be used as sacrifice film layer 2 in this implementation one
Material, organic matter are not only easy to by solution etches, and can also be decomposed under Plasma irradiation, are suitble to subsequent clear using Plasma
Wash inspection substrate；
Step 23, as shown in Figure 2 C, formed and examined on sacrificing film layer 2 using plasma enhanced chemical vapor deposition method
Film layer 3；
In this step, it can will be formed with the inspection substrate 1 for sacrificing film layer 2 and be placed on dedicated chemical vapor deposition chamber
Interior, and normally made according to conventional products technique and examine film layer 3；
Wherein, the inspection film layer 3 is for verifying whether chemical vapor deposition process reaches product requirement；If forming situation
There is exception, then needs to improve process conditions, chemical vapor depsotition equipment etc., finally ensure to produce when volume production
Satisfactory product, to improve yields；
Step 24, as shown in Figure 2 D, after to examining the formation situation of film layer 3 to test, using the quarter for sacrificing film layer 3
Liquid is lost, etches away and sacrifices film layer 3；
In this step, the etching liquid for sacrificing film layer 3 only performs etching sacrifice film layer 3, therefore after the completion of etching, can
Isolated inspection film layer 3 and inspection substrate 1, which is used material on product, subsequent to be refined
And recycle, avoid the unnecessary wasting of resources；
Step 25, as shown in Figure 2 E, Plasma irradiation is carried out to inspection substrate 1, to remove the residual on inspection substrate 1
Object, the residue include sacrificing the remaining part after etching of film layer 2；
After the completion of this step, finally inspection substrate 1 is recycled, so as to carry out next time using.
Obviously, the processing method of this implementation one can not only recycle inspection substrate 1, moreover it is possible to carry out to inspection film layer 3
It refines, examines the material of film layer 3 to achieve the purpose that save the cost to reduce unnecessary waste to recycle.
Implementation two
Compared with implementation one, present embodiment is second is that the sacrifice film layer formed is fitted on inspection substrate
It directly carries out using to realize convenient chemical vapor deposition, after examining film layer to form completion and carry out related check, directly
Using mechanically decoupled mode, film layer will be sacrificed and separated with inspection substrate, sacrifice film layer not performed etching again.
In practical applications, embodiment two can will sacrifice the second surface point of the first surface and inspection substrate of film layer
Not carry out amination processing, so that first surface and the second surface is adhered to amino.
The first surface for sacrificing film layer is bonded with the second surface of inspection substrate later, to as shown in Figure 3, make
Sacrifice the Hydrogenbond between film layer 2 and inspection substrate 1 by amino, it is clear that this mode makes two that hydrogen bond be combined with each other
Amino has saturability and directionality, therefore is bonded very secured, and stability can satisfy the requirement of chemical meteorology deposition,
In addition, can also will sacrifice film layer easily by mechanically decoupled and separate with inspection substrate.
As it can be seen that the processing method of this implementation two more can easily recycle inspection substrate, connect down inspection substrate
To continue to come into operation.Certainly, subsequent to be performed etching again using etching liquid to film layer is sacrificed, to obtain examining film
Layer, and refinement recycling is carried out to inspection film layer.
What needs to be explained here is that mechanical separation device can be traditional dyestripping equipment, due to being the prior art, herein
No longer it is described in detail.It is bonded with inspection using amino in addition, this implementation two is also not limited to sacrifice film layer, as it
He is bonded scheme, and carboxyl can also be used to be bonded and be either bonded using vacuum suction mode.
On the other hand, another embodiment of the present invention also provides a kind of processing equipment of inspection substrate, face as shown in Figure 4,
Include:
Setup module, for the setting sacrifice film layer on inspection substrate；
Deposition module examines film layer for being formed on sacrificing film layer using plasma enhanced chemical vapor deposition method；
Module is removed, for removing expendable film from inspection substrate after to examining the formation situation of film layer to test
Layer, so that film layer is examined to separate with inspection substrate；
Recycling module, for recycling inspection substrate.
Obviously, the processing equipment of the present embodiment is corresponding with above-mentioned processing method provided by the invention, therefore can be realized
Identical technical effect.
Specifically, the processing unit of the present embodiment can also recycle inspection film layer, i.e. the sacrifice film layer of the present embodiment
For nonmetallic materials and the liquid that can be etched etches；
Above-mentioned removal module includes:
First removal submodule, for etching away sacrifice film layer using the etching liquid for sacrificing film layer.
Wherein, which can only etch away sacrifice film layer, therefore after the completion of etching, be eventually inspection substrate and inspection
Film layer is tested to be kept completely separate, it is subsequent inspection film layer to be carried out bringing up again refining, to achieve the purpose that material economy uses.
In addition, sacrifice film layer can also be quickly arranged in the processing equipment of the present embodiment, and film layer and inspection substrate will be sacrificed
Separation.
I.e. the setup module of the present embodiment can will sacrifice film layer and be fitted on the inspection substrate, specifically include:
Amination submodule, for the second surface of the first surface and inspection substrate of sacrificing film layer to be carried out amino respectively
Change processing, makes first surface and second surface adhere to amino；
It is bonded submodule, for the first surface for sacrificing film layer to be bonded with the second surface of inspection substrate.
Correspondingly, removal module includes:
Second removal submodule will be sacrificed film layer and separated with inspection substrate for using mechanically decoupled mode.
Obviously, above scheme can be torn in inspection substrate in use, film layer, that is, note will be sacrificed, with higher convenient
Property.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of processing method of inspection substrate characterized by comprising
Film layer is sacrificed in setting on inspection substrate；
It is formed in the sacrifice film layer using plasma enhanced chemical vapor deposition method and examines film layer；
After testing to the formation situation for examining film layer, the sacrifice film layer is removed from the inspection substrate, from
And the inspection film layer is separated with the inspection substrate；
Recycle the inspection substrate.
2. processing method according to claim 1, which is characterized in that
The sacrifice film layer is nonmetallic materials and the liquid that can be etched etches；
The sacrifice film layer is removed from inspection substrate, comprising:
Using the etching liquid for sacrificing film layer, the sacrifice film layer is etched away.
3. processing method according to claim 1, which is characterized in that
Film layer is sacrificed in setting on inspection substrate, comprising:
Film layer will be sacrificed to be fitted on the inspection substrate；
The sacrifice film layer is removed from inspection substrate, comprising:
Using mechanically decoupled mode, the sacrifice film layer is separated with the inspection substrate.
4. processing method according to claim 1, which is characterized in that
Film layer will be sacrificed to be fitted on the inspection substrate, comprising:
The second surface of the first surface and the inspection substrate of sacrificing film layer is subjected to amination processing respectively, makes described first
Surface and the second surface adhere to amino；
The first surface for sacrificing film layer is bonded with the second surface of the inspection substrate.
5. processing method according to claim 1, which is characterized in that
Before film layer is sacrificed in setting on inspection substrate, the method also includes:
The inspection substrate is cleaned.
6. processing method according to claim 1, which is characterized in that
After removing the sacrifice film layer from the inspection substrate, before recycling the inspection substrate, the method also includes:
Plasma irradiating is carried out to the inspection substrate, to remove the residue on the inspection substrate.
7. a kind of processing equipment of inspection substrate characterized by comprising
Setup module, for the setting sacrifice film layer on inspection substrate；
Deposition module examines film layer for being formed in the sacrifice film layer using plasma enhanced chemical vapor deposition method；
Module is removed, for removing institute from the inspection substrate after testing to the formation situation for examining film layer
Sacrifice film layer is stated, so that the inspection film layer is separated with the inspection substrate；
Recycling module, for recycling the inspection substrate.
8. processing equipment according to claim 7, which is characterized in that
The sacrifice film layer is nonmetallic materials and the liquid that can be etched etches；
The removal module includes:
First removal submodule, for etching away the sacrifice film layer using the etching liquid for sacrificing film layer.
9. processing equipment according to claim 7, which is characterized in that
The setup module is specifically used for, and will sacrifice film layer and is fitted on the inspection substrate；
The removal module includes:
Second removal submodule separates the sacrifice film layer with the inspection substrate for using mechanically decoupled mode.
10. processing equipment according to claim 7, which is characterized in that
The setup module includes:
Amination submodule, for the second surface of the first surface and the inspection substrate of sacrificing film layer to be carried out amino respectively
Change processing makes the first surface and the second surface adhere to amino；
It is bonded submodule, for the first surface for sacrificing film layer to be bonded with the second surface of the inspection substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710262131.0A CN107083544B (en) | 2017-04-20 | 2017-04-20 | A kind of processing method and processing unit of inspection substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710262131.0A CN107083544B (en) | 2017-04-20 | 2017-04-20 | A kind of processing method and processing unit of inspection substrate |
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| Publication Number | Publication Date |
|---|---|
| CN107083544A CN107083544A (en) | 2017-08-22 |
| CN107083544B true CN107083544B (en) | 2019-07-02 |
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| CN201710262131.0A Expired - Fee Related CN107083544B (en) | 2017-04-20 | 2017-04-20 | A kind of processing method and processing unit of inspection substrate |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157623A (en) * | 2011-03-08 | 2011-08-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Stripping transfer method of substrate of thin film solar cell |
| CN102959678A (en) * | 2009-12-25 | 2013-03-06 | 东京毅力科创株式会社 | Method of manufacturing semiconductor device and system for manufacturing semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011053076A (en) * | 2009-09-01 | 2011-03-17 | Japan Electronic Materials Corp | Method of manufacturing probe card |
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2017
- 2017-04-20 CN CN201710262131.0A patent/CN107083544B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102959678A (en) * | 2009-12-25 | 2013-03-06 | 东京毅力科创株式会社 | Method of manufacturing semiconductor device and system for manufacturing semiconductor device |
| CN102157623A (en) * | 2011-03-08 | 2011-08-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Stripping transfer method of substrate of thin film solar cell |
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| CN107083544A (en) | 2017-08-22 |
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