TWI710024B - Method for cleaning processing chamber and plasma processing apparatus - Google Patents

Method for cleaning processing chamber and plasma processing apparatus Download PDF

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TWI710024B
TWI710024B TW107122304A TW107122304A TWI710024B TW I710024 B TWI710024 B TW I710024B TW 107122304 A TW107122304 A TW 107122304A TW 107122304 A TW107122304 A TW 107122304A TW I710024 B TWI710024 B TW I710024B
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processing chamber
potential
side wall
processing
radio frequency
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TW107122304A
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TW201916163A (en
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廖敬丞
曾李全
吳常明
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台灣積體電路製造股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
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    • H01J37/3244—Gas supply means
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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Abstract

In some embodiments, a method for cleaning a processing chamber is provided. The method may be performed by introducing a processing gas into a processing chamber that has a by-product disposed along sidewalls of the processing chamber. A plasma is generated from the processing gas using a radio frequency signal. A lower electrode is connected to a first electric potential. Concurrently, a bias voltage having a second electric potential is applied to a sidewall electrode to induce ion bombardment of the by-product, in which the second electric potential has a larger magnitude than the first electric potential. The processing gas is evacuated from the processing chamber.

Description

加工腔室的清潔方法及電漿加工裝置 Cleaning method of processing chamber and plasma processing device

本發明實施例係有關於一種加工腔室的清潔方法及實施此方法的電漿加工裝置，特別是有關於一種利用電位差來促使離子轟擊的加工腔室的清潔方法及實施此方法的電漿加工裝置。 The embodiment of the present invention relates to a method for cleaning a processing chamber and a plasma processing device implementing this method, and in particular to a method for cleaning a processing chamber that uses a potential difference to promote ion bombardment and plasma processing for implementing this method Device.

在製造現代電子裝置的整個過程中，廣泛地使用半導體加工設備，例如電漿增強化學氣相沉積(PE-CVD)系統、電漿蝕刻系統、以及濺鍍系統。此半導體加工設備可包含加工腔室，有助於包含由此設備執行的頻繁反應製程。由於進行這些製程的緣故，可能會有副產物形成在加工腔室的側壁上，導致設備的性能降低及/或汙染，其可能會導致電子裝置的產能降低。在試圖要保持設備效率以及電子裝置的產能的情況下，通常會執行清潔製程，以移除積聚在加工腔室側壁上的副產物。 In the entire process of manufacturing modern electronic devices, semiconductor processing equipment, such as plasma enhanced chemical vapor deposition (PE-CVD) systems, plasma etching systems, and sputtering systems are widely used. The semiconductor processing equipment may include a processing chamber, which helps to include frequent reaction processes performed by the equipment. Due to these processes, by-products may be formed on the sidewalls of the processing chamber, resulting in reduced performance and/or pollution of the equipment, which may reduce the productivity of the electronic device. In an attempt to maintain equipment efficiency and the productivity of electronic devices, a cleaning process is usually performed to remove by-products accumulated on the side walls of the processing chamber.

本發明實施例提供一種加工腔室的清潔方法，包含：將加工氣體引入加工腔室中，其中加工腔室具有沿加工腔室的側壁的副產物，利用射頻(RF)訊號由加工氣體產生電漿，將設置於加工腔室側壁內的下方電極連接至第一電位，同時對 側壁電極施加具有第二電位的偏壓，以促使對副產物的離子轟擊，其中第二電位的值大於第一電位的值，以及從加工腔室排出加工氣體。 The embodiment of the present invention provides a method for cleaning a processing chamber, including: introducing a processing gas into the processing chamber, wherein the processing chamber has by-products along the sidewalls of the processing chamber, and generating electricity from the processing gas using radio frequency (RF) signals Slurry, connect the lower electrode arranged in the side wall of the processing chamber to the first potential, and apply a bias with a second potential to the side wall electrodes to promote ion bombardment of the by-products, wherein the value of the second potential is greater than the first The value of the potential and the exhaust of the processing gas from the processing chamber.

本發明實施例提供一種電漿加工裝置，包含：加工腔室、第一射頻功率產生器、側壁電壓產生器以及第二射頻功率產生器。，其中該靜電吸盤的該上表面是配製用於接收一工件加工腔室包含下方電極，其中下方電極排列於靜電吸盤的上表面下方，且位於加工腔室的側壁之間，靜電吸盤的上表面是配置用於接收工件。第一射頻功率產生器電性連接至射頻天線。側壁電壓產生器電性連接至側壁電極。第二射頻功率產生器電性連接至下方電極。 The embodiment of the present invention provides a plasma processing device, including: a processing chamber, a first radio frequency power generator, a sidewall voltage generator, and a second radio frequency power generator. , Wherein the upper surface of the electrostatic chuck is configured to receive a workpiece and the processing chamber includes a lower electrode, wherein the lower electrode is arranged below the upper surface of the electrostatic chuck and is located between the side walls of the processing chamber, and the upper surface of the electrostatic chuck Is configured to receive artifacts. The first radio frequency power generator is electrically connected to the radio frequency antenna. The sidewall voltage generator is electrically connected to the sidewall electrode. The second radio frequency power generator is electrically connected to the lower electrode.

本發明實施例提供一種加工腔室的清潔方法，包含：將側壁電壓產生器的開關元件連接至第一電位，以將側壁電極連接至第一電位，將第二射頻功率產生器的開關元件連接至第二電位，以將下方電極連接至第二電位，對基板進行加工，其中基板包含位於加工腔室內的第一材料，此加工會產生副產物，副產物包含第一材料，並附著至加工腔室的側壁，從加工腔室移出加工後的基板，將加工氣體引入加工腔室，將第二射頻功率產生器的開關元件切換至第一電位，且同時將側壁電壓產生器的開關元件切換至第三電位，藉由將第一射頻功率產生器連接至射頻天線，在加工腔室內產生清潔電漿，以及從加工腔室排出加工氣體及副產物。 An embodiment of the present invention provides a method for cleaning a processing chamber, including: connecting a switching element of a sidewall voltage generator to a first potential, so as to connect a sidewall electrode to the first potential, and connecting a switching element of a second radio frequency power generator To the second potential to connect the lower electrode to the second potential to process the substrate. The substrate contains the first material in the processing chamber. This processing will produce by-products. The by-products contain the first material and adhere to the processing. On the side wall of the chamber, remove the processed substrate from the processing chamber, introduce processing gas into the processing chamber, switch the switching element of the second RF power generator to the first potential, and at the same time switch the switching element of the side wall voltage generator To the third potential, by connecting the first radio frequency power generator to the radio frequency antenna, clean plasma is generated in the processing chamber, and processing gas and by-products are discharged from the processing chamber.

100‧‧‧半導體加工系統 100‧‧‧Semiconductor processing system

102‧‧‧加工腔室 102‧‧‧Processing chamber

104‧‧‧第一加工腔室側壁(加工腔室側壁) 104‧‧‧First processing chamber side wall (processing chamber side wall)

106‧‧‧第二加工腔室側壁(加工腔室側壁) 106‧‧‧Second processing chamber side wall (processing chamber side wall)

108‧‧‧下方電極 108‧‧‧Lower electrode

110‧‧‧靜電吸盤 110‧‧‧Electrostatic chuck

112‧‧‧靜電吸盤基座 112‧‧‧Electrostatic chuck base

114‧‧‧工件 114‧‧‧Workpiece

116‧‧‧基板 116‧‧‧Substrate

118‧‧‧金屬層 118‧‧‧Metal layer

120‧‧‧光阻層 120‧‧‧Photoresist layer

121‧‧‧射頻天線 121‧‧‧RF antenna

122‧‧‧加工氣體入口端 122‧‧‧Processing gas inlet

123‧‧‧射頻天線絕緣子 123‧‧‧RF antenna insulator

124‧‧‧加工腔室氣體出口端 124‧‧‧Processing chamber gas outlet

125‧‧‧電漿源 125‧‧‧Plasma source

126‧‧‧加工氣體 126‧‧‧Processing gas

127‧‧‧第一射頻功率產生器 127‧‧‧The first RF power generator

128‧‧‧下方電極射頻功率產生器 128‧‧‧Lower electrode RF power generator

129‧‧‧電漿 129‧‧‧Plasma

130‧‧‧靜電吸盤功率產生器 130‧‧‧Electrostatic chuck power generator

132‧‧‧第二射頻功率產生器 132‧‧‧Second RF Power Generator

134‧‧‧第一側壁電壓產生器 134‧‧‧First side wall voltage generator

136‧‧‧第一側壁電極 136‧‧‧First side wall electrode

138‧‧‧第二側壁電壓產生器 138‧‧‧Second side wall voltage generator

140‧‧‧第二側壁電極 140‧‧‧Second side wall electrode

202‧‧‧射頻訊號產生器 202‧‧‧RF signal generator

204‧‧‧開關元件 204‧‧‧Switch element

206‧‧‧直流電偏壓產生器 206‧‧‧DC bias generator

208‧‧‧加熱元件 208‧‧‧Heating element

216‧‧‧清潔電漿 216‧‧‧Clean plasma

302‧‧‧蝕刻電漿 302‧‧‧Etching Plasma

304‧‧‧蝕刻氣體 304‧‧‧Etching gas

310‧‧‧副產物 310‧‧‧By-product

402‧‧‧功率開關分歧管 402‧‧‧Power switch branch tube

500‧‧‧流程圖 500‧‧‧Flowchart

502、504、506、508、510、512、514、516‧‧‧操作 502, 504, 506, 508, 510, 512, 514, 516‧‧‧Operation

根據以下的詳細說明並配合所附圖式以更加了解 本發明實施例的概念。應注意的是，根據本產業的標準慣例，圖式中的各種部件未必按照比例繪製。事實上，可能任意地放大或縮小各種部件的尺寸，以做清楚的說明。 According to the following detailed description and the accompanying drawings, the concept of the embodiments of the present invention can be better understood. It should be noted that, according to the standard practice of this industry, the various components in the drawings are not necessarily drawn to scale. In fact, it is possible to arbitrarily enlarge or reduce the size of various components to make a clear description.

第1圖繪示能夠實施本發明實施例之方法的半導體加工系統之一些實施例的圖式，用以移除累積在加工腔室側壁上的副產物。 FIG. 1 shows a diagram of some embodiments of a semiconductor processing system capable of implementing the method of the embodiment of the present invention to remove by-products accumulated on the sidewall of the processing chamber.

第2A-2B圖繪示能夠實施本發明實施例之方法的半導體加工系統之更詳細實施例的一系列圖式，用以移除累積在加工腔室側壁上的副產物。 Figures 2A-2B show a series of drawings of a more detailed embodiment of a semiconductor processing system capable of implementing the method of the embodiment of the present invention to remove by-products accumulated on the sidewall of the processing chamber.

第3A-3G圖繪示用以移除累積在加工腔室側壁上的副產物的方法之一些實施例的一系列圖式。 Figures 3A-3G show a series of diagrams of some embodiments of the method for removing by-products accumulated on the sidewall of the processing chamber.

第4A-4B圖繪示用以移除累積在加工腔室側壁上的副產物的方法之另一些實施例的一系列圖式。 FIGS. 4A-4B show a series of diagrams of other embodiments of the method for removing the by-products accumulated on the sidewall of the processing chamber.

第5圖繪示用以移除累積在加工腔室側壁上的副產物的方法之一些實施例的流程圖。 FIG. 5 shows a flowchart of some embodiments of a method for removing by-products accumulated on the side wall of the processing chamber.

以下將配合圖式說明本發明實施例，其中通篇使用相似的標號以指稱相似的元件，且其中所繪示的結構未必按照比例繪製。將可理解的是，此實施方式及對應的圖式並不會以任何方式限制本發明實施例的範圍，且實施方式及圖式僅提供一些範例，來說明能夠闡明本身發明概念的一些方式。 The embodiments of the present invention will be described below in conjunction with the drawings, in which similar reference numerals are used throughout to refer to similar elements, and the structures shown therein are not necessarily drawn to scale. It will be understood that this embodiment and the corresponding drawings do not limit the scope of the embodiments of the present invention in any way, and the embodiments and drawings only provide some examples to illustrate some ways of clarifying the inventive concept itself.

以下的揭露內容提供許多不同的實施例或範例以實施本發明實施例的不同部件。以下敘述構件及配置的特定範例，以簡化本發明實施例的說明。當然，這些特定的範例僅為 示範並非用以限定本發明實施例。例如，在以下的敘述中提及第一部件形成於第二部件上或上方，即表示其可包含第一部件與第二部件是直接接觸的實施例，亦可包含有附加部件形成於第一部件與第二部件之間，而使第一部件與第二部件可能未直接接觸的實施例。另外，在以下的揭露內容的不同範例中可能重複使用相同的參考符號及/或標記。這些重複係為了簡化與清晰之目的，並非用以指定所討論的不同實施例及/或結構之間的關係。 The following disclosure provides many different embodiments or examples to implement different components of the embodiments of the present invention. Specific examples of components and configurations are described below to simplify the description of the embodiments of the present invention. Of course, these specific examples are only for demonstration and are not intended to limit the embodiments of the present invention. For example, in the following description, it is mentioned that the first part is formed on or above the second part, which means that it may include an embodiment in which the first part and the second part are in direct contact, or may include additional parts formed on the first part. Between the component and the second component, the first component and the second component may not be in direct contact. In addition, the same reference symbols and/or marks may be used repeatedly in different examples of the following disclosure. These repetitions are for the purpose of simplification and clarity, and are not used to specify the relationship between the different embodiments and/or structures discussed.

此外，在此可使用與空間相關用詞。例如「底下」、「下方」、「較低的」、「上方」、「較高的」及類似的用詞，以便於描述圖式中繪示的一個元件或部件與另一個(些)元件或部件之間的關係。除了在圖式中繪示的方位外，這些空間相關用詞意欲包含使用中或操作中的裝置之不同方位。裝置可能被轉向不同方位(旋轉90度或其他方位)，且在此使用的空間相關詞也可依此做同樣的解釋。 In addition, words related to space can be used here. For example, "bottom", "below", "lower", "above", "higher" and similar terms to facilitate the description of one element or part and another element(s) shown in the diagram Or the relationship between components. In addition to the orientations depicted in the diagrams, these spatially related terms are intended to include different orientations of the device in use or operation. The device may be turned to different orientations (rotated by 90 degrees or other orientations), and the spatially related words used here can be interpreted in the same way.

積體電路(IC)科技不斷地進步。這些進步通常涉及幾何尺寸的縮小，以達成更低的製造成本、更高的裝置積體密度、更快的速度及更好的性能。由於裝置尺寸縮小的緣故，在加工腔室中發生側壁汙染(舉例而言，因不想要的汙染物由加工腔室的側壁剝落，並累積在基板表面上而導致基板的汙染)的負面效應會被放大。 Integrated circuit (IC) technology continues to advance. These advancements usually involve the reduction of geometric dimensions to achieve lower manufacturing costs, higher device density, faster speed and better performance. Due to the downsizing of the device, sidewall contamination in the processing chamber (for example, because unwanted contaminants peel off from the sidewall of the processing chamber and accumulate on the surface of the substrate, resulting in negative effects of substrate contamination) magnified.

舉例而言，可將工件裝載至電漿蝕刻系統的加工腔室中。工件可包含設置於惰性金屬層(例如：銀、銅等)上之圖案化的光阻層。電漿加工系統在加工腔室內產生電漿，以選 擇性地蝕刻惰性金屬層。在此製程期間，會產生非揮發性的副產物，並往往會累積在加工腔室的側壁上。當此工件(或是後續的工件)在加工腔室中進行加工時，電漿將會破壞形成於加工腔室側壁上之非揮發性副產物的部分鍵結，造成非揮發性副產物的原子從側壁上剝落。因此，非揮發性副產物的原子可能會累積在設置於加工腔室內的工件上成為污染物。在工件上累積的非揮發性副產物可導致此有缺陷的工件上之積體電路功能有瑕疵。由於缺乏對此非揮發性的副產物的物理轟擊，目前的無晶圓自動清潔(waferless auto-clean；WAC)製程無法有效地從加工腔室側壁移除此非揮發性的副產物。因此，一種有效地從加工腔室側壁移除非揮發性副產物之加工腔室的清潔方法(及相關的系統)將可提升半導體加工設備的效率，以改善積體電路的可靠度並降低成本。 For example, the workpiece can be loaded into the processing chamber of the plasma etching system. The workpiece may include a patterned photoresist layer disposed on an inert metal layer (such as silver, copper, etc.). The plasma processing system generates plasma in the processing chamber to selectively etch the inert metal layer. During this process, non-volatile by-products are generated and tend to accumulate on the side walls of the processing chamber. When this workpiece (or a subsequent workpiece) is processed in the processing chamber, the plasma will destroy the partial bonds of the non-volatile by-products formed on the side walls of the processing chamber, resulting in the atoms of the non-volatile by-products Peel off the side wall. Therefore, atoms of non-volatile by-products may accumulate on the workpieces placed in the processing chamber and become contaminants. The accumulation of non-volatile by-products on the workpiece can cause defects in the function of the integrated circuit on the defective workpiece. Due to the lack of physical bombardment of this non-volatile by-product, the current waferless auto-clean (WAC) process cannot effectively remove this non-volatile by-product from the sidewall of the processing chamber. Therefore, a process chamber cleaning method (and related systems) that effectively removes non-volatile by-products from the side walls of the process chamber will improve the efficiency of semiconductor processing equipment to improve the reliability of integrated circuits and reduce costs .

在一些實施例中，本發明實施例是有關於一種有效地從加工腔室側壁移除非揮發性副產物之清潔加工腔室的方法(及其相關系統)。此方法包含對位於加工腔室內的工件執行蝕刻製程。在蝕刻製程期間，來自工件的副產物可能從工件上剝落並附著在加工腔室的側壁上。在完成蝕刻製程之後，從加工腔室移出工件。在從加工腔室移出工件之後，將加工氣體引入加工腔室中，且從加工氣體產生電漿。同時，對側壁電極施加偏壓，以促使對位於加工腔室側壁上的副產物進行離子轟擊。在已有效地轟擊副產物之後，可從加工腔室排出加工氣體及副產物。透過物理地轟擊副產物，可有效地從加工腔室的側壁移除副產物，且在排出加工氣體時一併排出。因此，由於改 良的方法改變了一般加工腔室之清潔製程，透過對側壁電極施加偏壓來促使離子轟擊，改良的方法可提升半導體加工設備的效率，以提升積體電路的可靠度，並降低積體電路的成本。 In some embodiments, the embodiments of the present invention relate to a method (and related systems) for cleaning a processing chamber that effectively removes non-volatile by-products from the sidewall of the processing chamber. The method includes performing an etching process on a workpiece located in a processing chamber. During the etching process, by-products from the workpiece may peel off the workpiece and adhere to the sidewall of the processing chamber. After the etching process is completed, the workpiece is removed from the processing chamber. After removing the workpiece from the processing chamber, the processing gas is introduced into the processing chamber, and plasma is generated from the processing gas. At the same time, a bias voltage is applied to the sidewall electrodes to promote ion bombardment of by-products located on the sidewalls of the processing chamber. After the by-products have been effectively bombarded, the processing gas and the by-products can be discharged from the processing chamber. By physically bombarding the by-products, the by-products can be effectively removed from the sidewalls of the processing chamber and discharged together when the processing gas is discharged. Therefore, because the improved method changes the cleaning process of the general processing chamber, the bias voltage is applied to the sidewall electrodes to promote ion bombardment. The improved method can improve the efficiency of semiconductor processing equipment to increase the reliability of integrated circuits and reduce The cost of integrated circuits.

請參照第1圖，其提供能夠實施本發明實施例之方法的半導體加工系統100之一些實施例的圖式，用以移除累積在加工腔室側壁上的副產物。 Please refer to FIG. 1, which provides a diagram of some embodiments of a semiconductor processing system 100 capable of implementing the method of the embodiment of the present invention to remove by-products accumulated on the sidewall of the processing chamber.

半導體加工系統100包含加工腔室102，其中加工腔室102具有第一加工腔室側壁104及第二加工腔室側壁106。舉例而言，加工腔室102可以是電漿增強化學氣相沉積(PE-CVD)腔室。加工腔室側壁104/106包含導電材料。在一些實施例中，加工腔室102可包含設置於加工腔室102之側壁上的介電層，此介電層將腔室內部與加工腔室102的外殼分隔開來。 The semiconductor processing system 100 includes a processing chamber 102, wherein the processing chamber 102 has a first processing chamber side wall 104 and a second processing chamber side wall 106. For example, the processing chamber 102 may be a plasma enhanced chemical vapor deposition (PE-CVD) chamber. The side walls 104/106 of the processing chamber contain conductive materials. In some embodiments, the processing chamber 102 may include a dielectric layer disposed on the sidewall of the processing chamber 102, and the dielectric layer separates the interior of the chamber from the outer shell of the processing chamber 102.

下方電極108係設置於加工腔室102內。在一些實施例中，靜電吸盤110亦設置於加工腔室102內。在一些實施例中，靜電吸盤110包含下方電極108。在其他實施例中，靜電吸盤110包含下方電極108及靜電吸盤電極(圖未示)。此外，靜電吸盤110是用以在加工工件114的各階段中承載工件114。在一些實施例中，工件114包含設置於基板116上方的金屬層118，以及設置於金屬層118上方的光阻層120。在一些實施例中，金屬層118可以是惰性金屬，例如：銅、銀、金或其他一些惰性金屬。另外，靜電吸盤基座112可支撐下方電極108及靜電吸盤110。在一些實施例中，靜電吸盤基座112包含電性絕緣材料，用以使靜電吸盤110、下方電極108與加工腔室側壁絕緣。 The lower electrode 108 is arranged in the processing chamber 102. In some embodiments, the electrostatic chuck 110 is also disposed in the processing chamber 102. In some embodiments, the electrostatic chuck 110 includes a lower electrode 108. In other embodiments, the electrostatic chuck 110 includes a lower electrode 108 and an electrostatic chuck electrode (not shown). In addition, the electrostatic chuck 110 is used to carry the workpiece 114 in each stage of processing the workpiece 114. In some embodiments, the workpiece 114 includes a metal layer 118 disposed on the substrate 116 and a photoresist layer 120 disposed on the metal layer 118. In some embodiments, the metal layer 118 may be an inert metal, such as copper, silver, gold, or some other inert metal. In addition, the electrostatic chuck base 112 can support the lower electrode 108 and the electrostatic chuck 110. In some embodiments, the electrostatic chuck base 112 includes an electrically insulating material to insulate the electrostatic chuck 110 and the lower electrode 108 from the sidewall of the processing chamber.

加工腔室102更包含加工氣體入口端122及加工腔室氣體出口端124。在一些實施例中，加工氣體入口端122包含閥，以控制加工氣體126流入加工腔室102中。加工腔室氣體出口端124包含閥，以控制加工氣體126流出加工腔室102。另外，在一些實施例中，加工氣體入口端122及加工腔室氣體出口端124允許控制加工腔室102內的壓力。在一些實施例中，加工腔室氣體出口端124可用以與真空泵浦連通，以將加工腔室102抽至真空。在其他實施例中，半導體加工系統100包含真空泵浦，耦接至進入加工腔室102之單獨的孔洞，以允許將加工腔室102抽至真空。 The processing chamber 102 further includes a processing gas inlet end 122 and a processing chamber gas outlet end 124. In some embodiments, the processing gas inlet end 122 includes a valve to control the flow of the processing gas 126 into the processing chamber 102. The processing chamber gas outlet port 124 includes a valve to control the processing gas 126 to flow out of the processing chamber 102. Additionally, in some embodiments, the process gas inlet end 122 and the process chamber gas outlet end 124 allow control of the pressure in the process chamber 102. In some embodiments, the processing chamber gas outlet port 124 may be used to communicate with a vacuum pump to evacuate the processing chamber 102 to a vacuum. In other embodiments, the semiconductor processing system 100 includes a vacuum pump coupled to a separate hole into the processing chamber 102 to allow the processing chamber 102 to be evacuated.

半導體加工系統100也包含電漿源125，用以在加工腔室102內提供電漿。在一些實施例中，電漿源125可包含耦接至射頻天線121的第一射頻(RF)功率產生器127，其中射頻天線121藉由多個射頻天線絕緣子123，與加工腔室側壁104/106電性絕緣。在一些實施例中，射頻天線121可包含兩個短距離間隔的金屬電極，且可設置於加工腔室102的側壁內。此類型的射頻天線121可用於電容耦合電漿(capacitively coupled plasma；CCP)源中。在其他實施例中，射頻天線121可具有類似線圈的形狀，且可設置於加工腔室102的側壁外。此類型的射頻天線121可用於電感耦合電漿(inductively coupled plasma；ICP)源中。在另一些實施例中，射頻天線121可以是加工腔室102的側壁。第一射頻功率產生器127係用以對射頻天線121施加具有一電位的射頻訊號，以在加工腔室102內從加工氣體126形成電漿129。在一些實施例中，第一射頻功率產生器127在約 200W至約3000W的功率範圍內操作，並產生頻率介於約13.56MHz至約60MHz之間的射頻訊號。在一些實施例中，匹配網路係設置於第一射頻功率產生器127與射頻天線121之間。在其他實施例中，電漿源125可包含遠端電漿源，用以在上游電漿產生腔室內產生電漿，接著將此電漿提供至加工腔室102。 The semiconductor processing system 100 also includes a plasma source 125 for providing plasma in the processing chamber 102. In some embodiments, the plasma source 125 may include a first radio frequency (RF) power generator 127 coupled to a radio frequency antenna 121, wherein the radio frequency antenna 121 uses a plurality of radio frequency antenna insulators 123, and the processing chamber side wall 104/ 106 electrical insulation. In some embodiments, the radio frequency antenna 121 may include two short-distance apart metal electrodes, and may be disposed in the sidewall of the processing chamber 102. This type of radio frequency antenna 121 can be used in a capacitively coupled plasma (CCP) source. In other embodiments, the radio frequency antenna 121 may have a shape similar to a coil, and may be disposed outside the side wall of the processing chamber 102. This type of radio frequency antenna 121 can be used in an inductively coupled plasma (ICP) source. In other embodiments, the radio frequency antenna 121 may be the side wall of the processing chamber 102. The first RF power generator 127 is used to apply an RF signal having a potential to the RF antenna 121 to form a plasma 129 from the processing gas 126 in the processing chamber 102. In some embodiments, the first RF power generator 127 operates in a power range of about 200W to about 3000W, and generates a radio frequency signal with a frequency between about 13.56 MHz and about 60 MHz. In some embodiments, the matching network is disposed between the first RF power generator 127 and the RF antenna 121. In other embodiments, the plasma source 125 may include a remote plasma source for generating plasma in the upstream plasma generating chamber, and then providing the plasma to the processing chamber 102.

另外，半導體加工系統100包含耦接至下方電極108的下方電極射頻功率產生器128。下方電極射頻功率產生器128包含開關元件，用以在具有第一電位(例如約負600V)的第一端子與具有第二電位(例如約0V)的第二端子之間切換。在一些實施例中，第一端子亦耦接至射頻訊號產生器。下方電極射頻功率產生器係用以提供射頻訊號至下方電極108，以提升半導體加工系統100的效率(例如維持對電漿之電漿鞘層的控制)。在一些實施例中，下方電極射頻功率產生器128在約200W至約3000W的功率範圍內操作，並產生頻率介於約400kHz至約13.56MHz之間的射頻訊號。 In addition, the semiconductor processing system 100 includes a lower electrode radio frequency power generator 128 coupled to the lower electrode 108. The lower electrode radio frequency power generator 128 includes a switching element for switching between a first terminal having a first potential (for example, about minus 600V) and a second terminal having a second potential (for example, about 0V). In some embodiments, the first terminal is also coupled to the RF signal generator. The lower electrode radio frequency power generator is used to provide radio frequency signals to the lower electrode 108 to improve the efficiency of the semiconductor processing system 100 (for example, to maintain control of the plasma sheath of the plasma). In some embodiments, the lower electrode radio frequency power generator 128 operates in a power range of about 200 W to about 3000 W, and generates a radio frequency signal with a frequency between about 400 kHz and about 13.56 MHz.

在一些實施例中，下方電極射頻功率產生器128也提供訊號至設置於靜電吸盤110內的靜電吸盤電極(圖未示)。在其他實施例中，分開的靜電吸盤功率產生器130是用以施加電壓至靜電吸盤電極(圖未示)。在另一些實施例中，第二射頻功率產生器132包含靜電吸盤功率產生器130及下方電極射頻功率產生器128。 In some embodiments, the lower electrode RF power generator 128 also provides a signal to the electrostatic chuck electrode (not shown) disposed in the electrostatic chuck 110. In other embodiments, a separate electrostatic chuck power generator 130 is used to apply voltage to the electrostatic chuck electrode (not shown). In other embodiments, the second RF power generator 132 includes an electrostatic chuck power generator 130 and a lower electrode RF power generator 128.

另外，半導體加工系統100包含耦接至第一側壁電極136的第一側壁電壓產生器134，以及耦接至第二側壁電極140的第二側壁電壓產生器138。在一些實施例中，第一側壁電 壓產生器134及第二側壁電壓產生器138可以是相同的電壓產生器。第一側壁電極136及第二側壁電極140包含導電材料。在一些實施例中，第一側壁電極136是第一加工腔室側壁104，且第二側壁電極140是第二加工腔室側壁106。在其他實施例中，第一側壁電極136是設置於第一加工腔室側壁104後方，且第二側壁電極140是設置於第二加工腔室側壁106後方。第一側壁電壓產生器134及第二側壁電壓產生器138係用以分別施加電壓至第一加工腔室側壁104及第二加工腔室側壁106。在一些實施例中，第一側壁電壓產生器134及第二側壁電壓產生器138可產生負交流電偏壓。 In addition, the semiconductor processing system 100 includes a first sidewall voltage generator 134 coupled to the first sidewall electrode 136 and a second sidewall voltage generator 138 coupled to the second sidewall electrode 140. In some embodiments, the first sidewall voltage generator 134 and the second sidewall voltage generator 138 may be the same voltage generator. The first sidewall electrode 136 and the second sidewall electrode 140 include conductive materials. In some embodiments, the first side wall electrode 136 is the first processing chamber side wall 104 and the second side wall electrode 140 is the second processing chamber side wall 106. In other embodiments, the first side wall electrode 136 is disposed behind the side wall 104 of the first processing chamber, and the second side wall electrode 140 is disposed behind the side wall 106 of the second processing chamber. The first side wall voltage generator 134 and the second side wall voltage generator 138 are used to apply voltages to the first processing chamber side wall 104 and the second processing chamber side wall 106 respectively. In some embodiments, the first sidewall voltage generator 134 and the second sidewall voltage generator 138 can generate a negative alternating current bias.

利用第一側壁電壓產生器134及第二側壁電壓產生器138施加電壓至加工腔室側壁104/106，增加將加工腔室內的氣體粒子被吸引至加工腔室側壁104/106的速度。氣體粒子的速度增加造成氣體粒子有足夠的能量去轟擊加工腔室側壁104/106上所收集的副產物，使得副產物從加工腔室側壁104/106剝落。一旦副產物剝落，可經由加工腔室氣體出口端124從加工腔室102排出副產物，藉此減少汙染在加工腔室102內之後續加工的基板。 The first side wall voltage generator 134 and the second side wall voltage generator 138 are used to apply voltage to the processing chamber side wall 104/106 to increase the speed at which the gas particles in the processing chamber are attracted to the processing chamber side wall 104/106. The increase in the velocity of the gas particles causes the gas particles to have sufficient energy to bombard the by-products collected on the side walls 104/106 of the processing chamber, causing the by-products to peel off from the side walls 104/106 of the processing chamber. Once the by-products are peeled off, the by-products can be discharged from the processing chamber 102 through the processing chamber gas outlet port 124, thereby reducing contamination of subsequent processed substrates in the processing chamber 102.

請參照第2A-2B圖，其提供能夠實施本發明實施例之方法的半導體加工系統100之更詳細實施例的一系列圖式，用以移除累積在加工腔室側壁上的副產物。第2A圖繪示能夠實施本發明實施例之方法的半導體加工系統之更詳細實施例的剖面圖。第2B圖繪示能夠實施本發明實施例之方法的半導體加工系統之更詳細實施例的上視圖。 Please refer to FIGS. 2A-2B, which provide a series of drawings of a more detailed embodiment of the semiconductor processing system 100 capable of implementing the method of the embodiment of the present invention to remove by-products accumulated on the side wall of the processing chamber. FIG. 2A shows a cross-sectional view of a more detailed embodiment of a semiconductor processing system capable of implementing the method of the embodiment of the present invention. FIG. 2B shows a top view of a more detailed embodiment of a semiconductor processing system capable of implementing the method of the embodiment of the present invention.

如第2A-2B圖所示，第一射頻功率產生器127及第二射頻功率產生器132可更包含開關元件204及射頻訊號產生器202。第一射頻功率產生器127的開關元件204係設置於射頻訊號產生器202與射頻天線121之間。在一些實施例中，第一射頻功率產生器127的開關元件204是用以開啟或關閉連接射頻訊號產生器202與射頻天線121的電路。在其他實施例中，第一射頻功率產生器127的開關元件204是用以在連接至射頻訊號產生器202的第一端子與接地的第二端子之間切換。第二射頻功率產生器132的開關元件204係設置於射頻訊號產生器202與下方電極108之間。下方電極108是用以接收第一電位(例如約負600伏特(V))及第二電位(例如約0V)。第二射頻功率產生器132的開關元件204是用以在具有第一電位(例如約負600V)的第一端子與具有第二電位(例如約0V)的第二端子之間切換。在一些實施例中，第一端子亦耦接至射頻訊號產生器202。 As shown in FIGS. 2A-2B, the first RF power generator 127 and the second RF power generator 132 may further include a switching element 204 and an RF signal generator 202. The switching element 204 of the first RF power generator 127 is disposed between the RF signal generator 202 and the RF antenna 121. In some embodiments, the switch element 204 of the first RF power generator 127 is used to turn on or turn off the circuit connecting the RF signal generator 202 and the RF antenna 121. In other embodiments, the switching element 204 of the first RF power generator 127 is used to switch between the first terminal connected to the RF signal generator 202 and the second terminal connected to the ground. The switching element 204 of the second RF power generator 132 is disposed between the RF signal generator 202 and the lower electrode 108. The lower electrode 108 is used to receive a first potential (for example, about minus 600 volts (V)) and a second potential (for example, about 0V). The switching element 204 of the second radio frequency power generator 132 is used to switch between a first terminal having a first potential (for example, about minus 600V) and a second terminal having a second potential (for example, about 0V). In some embodiments, the first terminal is also coupled to the RF signal generator 202.

第一加工腔室側壁104可以是單一連續狀且為圓柱形的導電材料。在一些實施例中，第一側壁電極136可以是單一連續狀且為圓柱形的導電材料，並圍繞第一加工腔室側壁104。在此些實施例中，第一側壁電壓產生器134可連接至第一側壁電極136，並用以提供電壓至整個第一側壁電極136。在一些替代實施例中，複數個分開的側壁電極可圍繞第一加工腔室側壁104。在此些實施例中，分開的側壁電極可耦接至不同的側壁電壓產生器(舉例而言，第一側壁電極可耦接至第一側壁電壓產生器，而第二側壁電極可耦接至第二側壁電壓產生器)。 The side wall 104 of the first processing chamber may be a single continuous and cylindrical conductive material. In some embodiments, the first sidewall electrode 136 may be a single continuous and cylindrical conductive material and surround the sidewall 104 of the first processing chamber. In these embodiments, the first sidewall voltage generator 134 can be connected to the first sidewall electrode 136 and used to provide voltage to the entire first sidewall electrode 136. In some alternative embodiments, a plurality of separate sidewall electrodes may surround the first processing chamber sidewall 104. In these embodiments, the separate sidewall electrodes can be coupled to different sidewall voltage generators (for example, the first sidewall electrode can be coupled to the first sidewall voltage generator, and the second sidewall electrode can be coupled to Second sidewall voltage generator).

第一側壁電壓產生器134可包含開關元件204，用以在具有第一電位(例如約負600V)的第一端子與具有第二電位(例如約0V)的第二端子之間切換。在一些實施例中，第一端子亦耦接至直流電偏壓產生器206。在一些實施例中，直流電偏壓產生器206是交流電偏壓產生器。第一側壁電壓產生器134的開關元件204係設置於直流電偏壓產生器206與第一側壁電極136之間。開關元件204是用以在連接至直流電偏壓產生器206的第一端子與接地的第二端子之間切換。在一些實施例中，直流電偏壓產生器206輸出介於約0.1V至約600V的範圍內的負電壓。雖然未繪示於第2A-2B圖中，應理解的是，第二側壁電壓產生器138也可包含開關元件204及直流電偏壓產生器206。 The first sidewall voltage generator 134 may include a switching element 204 for switching between a first terminal having a first potential (for example, about minus 600V) and a second terminal having a second potential (for example, about 0V). In some embodiments, the first terminal is also coupled to the DC bias generator 206. In some embodiments, the direct current bias generator 206 is an alternating current bias generator. The switching element 204 of the first sidewall voltage generator 134 is disposed between the DC bias voltage generator 206 and the first sidewall electrode 136. The switching element 204 is used to switch between the first terminal connected to the DC bias generator 206 and the second terminal connected to the ground. In some embodiments, the DC bias generator 206 outputs a negative voltage in the range of about 0.1V to about 600V. Although not shown in FIGS. 2A-2B, it should be understood that the second sidewall voltage generator 138 may also include a switching element 204 and a DC bias generator 206.

另外，在一些實施例中，半導體加工系統100包含加熱元件208，以控制加工腔室102內的溫度。在一些實施例中，加熱元件208為加工腔室側壁104/106。 In addition, in some embodiments, the semiconductor processing system 100 includes a heating element 208 to control the temperature in the processing chamber 102. In some embodiments, the heating element 208 is the side wall 104/106 of the processing chamber.

請參照第3A-3G圖，其提供用以移除累積在加工腔室側壁上的副產物的方法之一些實施例的一系列圖式。 Please refer to FIGS. 3A-3G, which provide a series of diagrams of some embodiments of the method for removing the by-products accumulated on the side wall of the processing chamber.

如第3A圖所示，提供半導體加工系統100。半導體加工系統100係將加工腔室102的壓力抽真空，以準備執行工件114的蝕刻製程。在一些實施例中，加工腔室102的壓力係控制在20毫托(mT)及100mT之間。將工件114設置於加工腔室102內的靜電吸盤110上。在一些實施例中，工件114包含設置於金屬層118上方的光阻層120，其中金屬層118係設置於基板116上方。 As shown in FIG. 3A, a semiconductor processing system 100 is provided. The semiconductor processing system 100 evacuates the pressure of the processing chamber 102 to prepare to perform the etching process of the workpiece 114. In some embodiments, the pressure of the processing chamber 102 is controlled between 20 millitorr (mT) and 100 mT. The workpiece 114 is set on the electrostatic chuck 110 in the processing chamber 102. In some embodiments, the workpiece 114 includes a photoresist layer 120 disposed on the metal layer 118, wherein the metal layer 118 is disposed on the substrate 116.

此外，當加工氣體入口端122的閥關閉時，加工腔 室氣體出口端124的閥則會開啟。真空泵浦(圖未示)可從加工腔室氣體出口端124的閥連接下游。真空泵浦是用以將氣體抽出加工腔室102外，以降低加工腔室102的壓力。在一些實施例中，半導體加工系統100執行清洗步驟，以在加工腔室102的壓力降低之前，從加工腔室102移除不想要的氣體分子。 In addition, when the valve at the processing gas inlet end 122 is closed, the valve at the processing chamber gas outlet end 124 is opened. A vacuum pump (not shown) can be connected downstream from a valve at the gas outlet end 124 of the processing chamber. The vacuum pump is used to draw gas out of the processing chamber 102 to reduce the pressure in the processing chamber 102. In some embodiments, the semiconductor processing system 100 performs a cleaning step to remove unwanted gas molecules from the processing chamber 102 before the pressure of the processing chamber 102 is reduced.

當加工腔室102的壓力降低時，設置於第一射頻功率產生器127中的開關元件204可開啟射頻天線121與第一射頻功率產生器127的射頻訊號產生器202之間的電路。另外，第二射頻功率產生器132的開關元件204可將下方電極108接地。此外，第一側壁電壓產生器134的開關元件204將第一側壁電極136接地。再者，第二側壁電壓產生器138的開關元件204將第二側壁電極140接地。 When the pressure of the processing chamber 102 decreases, the switching element 204 provided in the first RF power generator 127 can open the circuit between the RF antenna 121 and the RF signal generator 202 of the first RF power generator 127. In addition, the switching element 204 of the second radio frequency power generator 132 can ground the lower electrode 108. In addition, the switching element 204 of the first sidewall voltage generator 134 grounds the first sidewall electrode 136. Furthermore, the switching element 204 of the second side wall voltage generator 138 grounds the second side wall electrode 140.

如第3B圖所示，透過蝕刻電漿302蝕刻工件114。在一些實施例中，透過使蝕刻氣體304流入加工腔室102中，且施加射頻訊號以激發蝕刻電漿302，來形成蝕刻電漿302。舉例而言，可開啟加工氣體入口端122的閥，並允許蝕刻氣體304流入加工腔室102中。在蝕刻氣體304已流入加工腔室102中之後，第一射頻功率產生器127的開關元件204會關閉第一射頻功率產生器127的射頻訊號產生器202與射頻天線121之間的電路。在一些實施例中，第一射頻功率產生器127在約200W至約3000W的功率範圍內操作，並產生頻率介於約13.56MHz至約60MHz之間的射頻訊號。在一些實施例中，第二射頻功率產生器132的開關元件204也進行切換，使得第二射頻功率產生器132的射頻訊號產生器202連接至下方電極108。在一些實施例 中，第二射頻功率產生器132在約200W至約3000W的功率範圍內操作，並產生頻率介於約400kHz至約13.56MHz之間的射頻訊號。因此，由射頻天線121及下方電極108輸出的射頻訊號形成蝕刻電漿302，進而蝕刻工件114。 As shown in FIG. 3B, the workpiece 114 is etched through the etching plasma 302. In some embodiments, the etching plasma 302 is formed by flowing the etching gas 304 into the processing chamber 102 and applying a radio frequency signal to excite the etching plasma 302. For example, the valve at the processing gas inlet 122 can be opened, and the etching gas 304 can be allowed to flow into the processing chamber 102. After the etching gas 304 has flowed into the processing chamber 102, the switching element 204 of the first RF power generator 127 closes the circuit between the RF signal generator 202 of the first RF power generator 127 and the RF antenna 121. In some embodiments, the first radio frequency power generator 127 operates in a power range of about 200 W to about 3000 W, and generates radio frequency signals with a frequency between about 13.56 MHz and about 60 MHz. In some embodiments, the switching element 204 of the second radio frequency power generator 132 is also switched, so that the radio frequency signal generator 202 of the second radio frequency power generator 132 is connected to the lower electrode 108. In some embodiments, the second RF power generator 132 operates in a power range of about 200W to about 3000W, and generates a radio frequency signal with a frequency between about 400kHz and about 13.56MHz. Therefore, the radio frequency signal output from the radio frequency antenna 121 and the lower electrode 108 forms an etching plasma 302, which in turn etches the workpiece 114.

在一些實施例中，蝕刻電漿302會蝕刻掉部分金屬層118。當蝕刻電漿302蝕刻掉部分金屬層118時，產生大量的副產物310，並累積在加工腔室側壁104/106上。在一些實施例中，副產物310可以是非揮發性的副產物，例如：銅、銀、金或一些其他非揮發性的副產物。因此，當繼續蝕刻工件114(或後續的工件)時，蝕刻電漿302會破壞位於加工腔室側壁104/106上之非揮發性副產物310的部分鍵結，造成微量的非揮發性副產物從側壁剝落。因此，微量的非揮發性副產物310可能會累積在設置於加工腔室102內的工件114上成為污染物，可能會導致形成有缺陷的工件。 In some embodiments, the etching plasma 302 will etch away part of the metal layer 118. When the etching plasma 302 etches a part of the metal layer 118, a large amount of by-product 310 is generated and accumulated on the sidewall 104/106 of the processing chamber. In some embodiments, the by-product 310 may be a non-volatile by-product, such as copper, silver, gold, or some other non-volatile by-product. Therefore, when the workpiece 114 (or subsequent workpieces) continues to be etched, the etching plasma 302 will destroy the partial bonding of the non-volatile by-products 310 on the side walls 104/106 of the processing chamber, resulting in a small amount of non-volatile by-products Peel off from the side wall. Therefore, a small amount of non-volatile by-products 310 may accumulate on the workpiece 114 disposed in the processing chamber 102 and become contaminants, which may lead to the formation of defective workpieces.

如第3C圖所示，已從加工腔室102移出工件114，且降低加工腔室102的壓力，以準備從加工腔室側壁104/106移除非揮發性的副產物310。在一些實施例中，因為工件114已從加工腔室102移出，且此清潔製程並非濕式清潔製程，故從加工腔室側壁104/106移除非揮發性副產物310的清潔製程被稱作無晶圓自動清潔(WAC)製程。在一些實施例中，加工腔室102的壓力降至約40毫托(mT)至約80mT的範圍內。在另一些實施例中，加熱元件(圖未示)加熱加工腔室102內部至約20℃至約80℃的範圍內。 As shown in FIG. 3C, the workpiece 114 has been removed from the processing chamber 102, and the pressure of the processing chamber 102 is reduced to prepare to remove the non-volatile by-product 310 from the side walls 104/106 of the processing chamber. In some embodiments, because the workpiece 114 has been removed from the processing chamber 102 and the cleaning process is not a wet cleaning process, the cleaning process for removing the non-volatile by-products 310 from the sidewalls 104/106 of the processing chamber is referred to as Waferless automatic cleaning (WAC) process. In some embodiments, the pressure of the processing chamber 102 is reduced to a range of about 40 millitorr (mT) to about 80 mT. In other embodiments, a heating element (not shown) heats the inside of the processing chamber 102 to a range of about 20°C to about 80°C.

在一些實施例中，在清潔製程之降低壓力階段的 期間，第一射頻功率產生器127的開關元件204會開啟第一射頻功率產生器127的射頻訊號產生器202與射頻天線121之間的電路。另外，第二射頻功率產生器132的開關元件204會進行切換，以將下方電極108接地。此外，第一側壁電壓產生器134及第二側壁電壓產生器138的開關元件204分別將第一側壁電極136及第二側壁電極140接地。 In some embodiments, during the pressure reduction stage of the cleaning process, the switching element 204 of the first RF power generator 127 turns on the circuit between the RF signal generator 202 of the first RF power generator 127 and the RF antenna 121 . In addition, the switching element 204 of the second radio frequency power generator 132 is switched to ground the lower electrode 108. In addition, the switching elements 204 of the first side wall voltage generator 134 and the second side wall voltage generator 138 connect the first side wall electrode 136 and the second side wall electrode 140 to ground, respectively.

如第3D圖所示，從第二加工腔室側壁106移除位於第二加工腔室側壁106上的非揮發性副產物310。在一些實施例中，透過使加工氣體126流入加工腔室102中，並經由射頻訊號激發電漿，以在加工腔室102內形成清潔電漿216。在一些實施例中，加工氣體126可包含例如氧、氯、硼、氮、氫或前述的組合。舉例而言，可開啟加工氣體入口端122的閥，並允許加工氣體126流入加工腔室102中。在加工氣體126已流入加工腔室102中之後，第一射頻功率產生器127的開關元件204會關閉第一射頻功率產生器127的射頻訊號產生器202與射頻天線121之間的電路，以使射頻天線121輸出射頻訊號。 As shown in FIG. 3D, the non-volatile by-products 310 on the side wall 106 of the second processing chamber are removed from the side wall 106 of the second processing chamber. In some embodiments, the processing gas 126 flows into the processing chamber 102 and the plasma is excited by radio frequency signals to form a clean plasma 216 in the processing chamber 102. In some embodiments, the process gas 126 may include, for example, oxygen, chlorine, boron, nitrogen, hydrogen, or a combination of the foregoing. For example, the valve at the processing gas inlet 122 can be opened and the processing gas 126 can be allowed to flow into the processing chamber 102. After the processing gas 126 has flowed into the processing chamber 102, the switching element 204 of the first RF power generator 127 closes the circuit between the RF signal generator 202 of the first RF power generator 127 and the RF antenna 121, so that The radio frequency antenna 121 outputs radio frequency signals.

與第3B圖所示的蝕刻製程期間不同，第二射頻功率產生器132的開關元件204將下方電極108接地，以在清潔製程期間保護靜電吸盤110。另外，第二側壁電壓產生器138的開關元件204進行切換，使得第二側壁電極140連接至第二側壁電壓產生器138的直流電偏壓產生器206。在一些實施例中，第二側壁電極140可連接至直流電偏壓產生器206介於約400秒至約600秒的時間週期。在其他實施例中，第二側壁電極140可連接至直流電偏壓產生器206的時間週期介於約200秒至約400秒。 透過將第二側壁電極140連接至第二側壁電壓產生器138的直流電偏壓產生器206，清潔電漿216與第二側壁電極140之間的電位差促使對非揮發性副產物310的物理轟擊(例如離子轟擊)，因而有效地移除位於第二加工腔室側壁106上的非揮發性副產物310。 Unlike the etching process shown in FIG. 3B, the switching element 204 of the second RF power generator 132 grounds the lower electrode 108 to protect the electrostatic chuck 110 during the cleaning process. In addition, the switching element 204 of the second sidewall voltage generator 138 is switched so that the second sidewall electrode 140 is connected to the DC bias generator 206 of the second sidewall voltage generator 138. In some embodiments, the second sidewall electrode 140 may be connected to the DC bias generator 206 for a time period ranging from about 400 seconds to about 600 seconds. In other embodiments, the time period during which the second sidewall electrode 140 can be connected to the DC bias generator 206 is between about 200 seconds and about 400 seconds. By connecting the second side wall electrode 140 to the DC bias generator 206 of the second side wall voltage generator 138, the potential difference between the cleaning plasma 216 and the second side wall electrode 140 promotes physical bombardment of the non-volatile by-product 310 ( For example, ion bombardment), thereby effectively removing the non-volatile by-product 310 on the side wall 106 of the second processing chamber.

如第3E圖所示，在已有效地轟擊非揮發性副產物310以移除位於第二加工腔室側壁106上的非揮發性副產物310之後，經由加工腔室氣體出口端124將加工氣體126及非揮發性副產物310排出加工腔室102外。在一些實施例中，在排出加工氣體126及非揮發性副產物310的期間，第一射頻功率產生器127的開關元件204切斷射頻天線121與第一射頻功率產生器127的射頻訊號產生器202之間的連結。另外，第二側壁電壓產生器138的開關元件204進行切換，以將第二側壁電極140接地。在一些實施例中，在已排出加工氣體126之後，加工腔室氣體出口端124的閥保持開啟，以為了後續的製程降低加工腔室102的壓力。 As shown in FIG. 3E, after the non-volatile by-product 310 has been effectively bombarded to remove the non-volatile by-product 310 on the side wall 106 of the second processing chamber, the processing gas is removed from the processing chamber gas outlet port 124 126 and non-volatile by-products 310 are discharged outside the processing chamber 102. In some embodiments, the switching element 204 of the first RF power generator 127 cuts off the RF antenna 121 and the RF signal generator of the first RF power generator 127 during the process gas 126 and the non-volatile by-products 310 are discharged. The link between 202. In addition, the switching element 204 of the second sidewall voltage generator 138 switches to ground the second sidewall electrode 140. In some embodiments, after the processing gas 126 has been discharged, the valve at the gas outlet end 124 of the processing chamber is kept open to reduce the pressure of the processing chamber 102 for subsequent processes.

如第3F圖所示，從第一加工腔室側壁104移除位於第一加工腔室側壁104上的非揮發性副產物310。在一些實施例中，透過使加工氣體126流入加工腔室102中，並藉由射頻訊號激發電漿，以在加工腔室102內形成清潔電漿216。在一些實施例中，加工氣體126可包含例如氧、氯、硼、氮、氫或前述的組合。舉例而言，可開啟加工氣體入口端122的閥，並允許加工氣體126流入加工腔室102中。在加工氣體126已流入加工腔室102中之後，第一射頻功率產生器127的開關元件204會關閉 第一射頻功率產生器127的射頻訊號產生器202與射頻天線121之間的電路。 As shown in FIG. 3F, the non-volatile by-products 310 on the side wall 104 of the first processing chamber are removed from the side wall 104 of the first processing chamber. In some embodiments, the processing gas 126 flows into the processing chamber 102 and the plasma is excited by radio frequency signals to form a clean plasma 216 in the processing chamber 102. In some embodiments, the process gas 126 may include, for example, oxygen, chlorine, boron, nitrogen, hydrogen, or a combination of the foregoing. For example, the valve at the processing gas inlet 122 can be opened and the processing gas 126 can be allowed to flow into the processing chamber 102. After the processing gas 126 has flowed into the processing chamber 102, the switching element 204 of the first RF power generator 127 will close the circuit between the RF signal generator 202 of the first RF power generator 127 and the RF antenna 121.

與第3B圖所示的蝕刻製程期間不同，第二射頻功率產生器132的開關元件204將下方電極108接地，以在清潔製程期間保護靜電吸盤110。另外，對第一側壁電壓產生器134的開關元件204進行切換，使第一側壁電極136連接至第一側壁電壓產生器134的直流電偏壓產生器206。在一些實施例中，第一側壁電極136可連接至直流電偏壓產生器206的時間週期介於約400秒至約600秒。在其他實施例中，第一側壁電極136可連接至直流電偏壓產生器206的時間週期介於約200秒至約400秒。透過將第一側壁電極136連接至第一側壁電壓產生器134的直流電偏壓產生器206，清潔電漿216與第一側壁電極136之間的電位差促使對非揮發性副產物310的物理轟擊(例如離子轟擊)，因而有效地移除位於第一加工腔室側壁104上的非揮發性副產物310。 Unlike the etching process shown in FIG. 3B, the switching element 204 of the second RF power generator 132 grounds the lower electrode 108 to protect the electrostatic chuck 110 during the cleaning process. In addition, the switching element 204 of the first side wall voltage generator 134 is switched, so that the first side wall electrode 136 is connected to the DC bias generator 206 of the first side wall voltage generator 134. In some embodiments, the time period during which the first sidewall electrode 136 can be connected to the DC bias generator 206 is between about 400 seconds and about 600 seconds. In other embodiments, the time period during which the first sidewall electrode 136 can be connected to the DC bias generator 206 is between about 200 seconds and about 400 seconds. By connecting the first side wall electrode 136 to the DC bias generator 206 of the first side wall voltage generator 134, the potential difference between the cleaning plasma 216 and the first side wall electrode 136 promotes physical bombardment of the non-volatile by-product 310 ( For example, ion bombardment), thereby effectively removing the non-volatile by-product 310 on the side wall 104 of the first processing chamber.

如第3G圖所示，在已有效地轟擊非揮發性副產物310以移除位於第一加工腔室側壁104上的非揮發性副產物310之後，經由加工腔室氣體出口端124將加工氣體126及非揮發性副產物310排出加工腔室102外。在一些實施例中，在排出加工氣體126及非揮發性副產物310的期間，第一射頻功率產生器127的開關元件204切斷射頻天線121與第一射頻功率產生器127的射頻訊號產生器202之間的連結。另外，對第一側壁電壓產生器134的開關元件204進行切換，以將第一側壁電極136接地。在一些實施例中，在已排出加工氣體126之後，加工腔室 氣體出口端124的閥保持開啟，以為了後續的製程而降低加工腔室102的壓力。 As shown in FIG. 3G, after the non-volatile by-product 310 has been effectively bombarded to remove the non-volatile by-product 310 on the side wall 104 of the first processing chamber, the processing gas is removed from the gas outlet port 124 of the processing chamber. 126 and non-volatile by-products 310 are discharged outside the processing chamber 102. In some embodiments, the switching element 204 of the first RF power generator 127 cuts off the RF antenna 121 and the RF signal generator of the first RF power generator 127 during the process gas 126 and the non-volatile by-products 310 are discharged. The link between 202. In addition, the switching element 204 of the first sidewall voltage generator 134 is switched to ground the first sidewall electrode 136. In some embodiments, after the processing gas 126 has been discharged, the valve at the gas outlet end 124 of the processing chamber remains open to reduce the pressure of the processing chamber 102 for subsequent processing.

請參照第4A-4B圖，其提供用以移除累積在加工腔室側壁上的副產物的方法之另外一些實施例的一系列圖式。 Please refer to FIGS. 4A-4B, which provide a series of diagrams of other embodiments of the method for removing the by-products accumulated on the side wall of the processing chamber.

如第4A圖所示，半導體加工系統100包含功率開關分歧管402。在一些實施例中，功率開關分歧管402包含第二射頻功率產生器132、第一側壁電壓產生器134及第二側壁電壓產生器138，並控制各自的開關元件204。在另一些實施例中，功率開關分歧管402包含複數個開關，用以在第一電位節點、第二電位節點及/或射頻訊號產生器節點之間切換，進而使得功率開關分歧管控制下方電極108、靜電吸盤110、第一側壁電極136及第二側壁電極140的節點連接。在一些實施例中，第二電位的值大於第一電位的值。舉例而言，第一電位為約0V，而第二電位為約負600V。 As shown in FIG. 4A, the semiconductor processing system 100 includes a power switch branch tube 402. In some embodiments, the power switch branch tube 402 includes a second RF power generator 132, a first side wall voltage generator 134, and a second side wall voltage generator 138, and controls the respective switching elements 204. In other embodiments, the power switch branch tube 402 includes a plurality of switches for switching between the first potential node, the second potential node and/or the radio frequency signal generator node, so that the power switch branch tube controls the lower electrode 108. The nodes of the electrostatic chuck 110, the first side wall electrode 136 and the second side wall electrode 140 are connected. In some embodiments, the value of the second potential is greater than the value of the first potential. For example, the first potential is about 0V, and the second potential is about negative 600V.

如第4A圖更進一步所示，從第一加工腔室側壁104移除形成於第一加工腔室側壁104上的非揮發性副產物310，同時從第二加工腔室側壁106移除位於第二加工腔室側壁106上的非揮發性副產物310。與第3D及3F圖所示的清潔製程相似的是：功率開關分歧管402切換第二射頻功率產生器132的開關元件204，將下方電極108接地，以在清潔製程期間保護靜電吸盤110。然而，與第3D及3F圖所示的清潔製程不同的是：功率開關分歧管402切換第一側壁電壓產生器134及第二側壁電壓產生器138的開關元件204，將第一側壁電壓產生器134及第二側壁電壓產生器138連接至各自的直流電偏壓產生器206。因此， 在一些實施例中，透過促使對非揮發性副產物310的物理轟擊(例如離子轟擊)，可同時有效地移除位於第一加工腔室側壁104及第二加工腔室側壁106上的非揮發性副產物310。 As further shown in FIG. 4A, the non-volatile by-products 310 formed on the first processing chamber side wall 104 are removed from the first processing chamber side wall 104, while the second processing chamber side wall 106 is removed from the second processing chamber side wall 106. Second, the non-volatile by-product 310 on the side wall 106 of the processing chamber. Similar to the cleaning process shown in FIGS. 3D and 3F, the power switch branch tube 402 switches the switching element 204 of the second RF power generator 132 and grounds the lower electrode 108 to protect the electrostatic chuck 110 during the cleaning process. However, unlike the cleaning process shown in FIGS. 3D and 3F, the power switch branch tube 402 switches the switching elements 204 of the first side wall voltage generator 134 and the second side wall voltage generator 138, and the first side wall voltage generator 134 and the second sidewall voltage generator 138 are connected to respective DC bias voltage generators 206. Therefore, in some embodiments, by promoting physical bombardment (for example, ion bombardment) to the non-volatile by-product 310, the side walls 104 and 106 on the first processing chamber side wall can be effectively removed. Non-volatile by-product 310.

如第4B圖所示，在已有效地轟擊非揮發性副產物310以移除位於第一加工腔室側壁104及第二加工腔室側壁106上的非揮發性副產物310之後，經由加工腔室氣體出口端124將加工氣體126及非揮發性副產物310排出加工腔室102外。在一些實施例中，在排出加工氣體126及非揮發性副產物310的期間，功率開關分歧管402切換第一射頻功率產生器127的開關元件204，以切斷射頻天線121與第一射頻功率產生器127的射頻訊號產生器202之間的連結。另外，功率開關分歧管402將第一側壁電壓產生器134及第二側壁電壓產生器138的開關元件204由各自的第一端子切換各自的第二端子，其將第一側壁電極136及第二側壁電極140二者皆接地。 As shown in FIG. 4B, after the non-volatile by-products 310 have been effectively bombarded to remove the non-volatile by-products 310 on the first processing chamber side wall 104 and the second processing chamber side wall 106, the processing chamber The chamber gas outlet port 124 discharges the processing gas 126 and the non-volatile by-products 310 out of the processing chamber 102. In some embodiments, during the process gas 126 and non-volatile by-products 310 are discharged, the power switch branch tube 402 switches the switching element 204 of the first RF power generator 127 to cut off the RF antenna 121 and the first RF power The connection between the generator 127 and the RF signal generator 202. In addition, the power switch branch tube 402 switches the switching elements 204 of the first sidewall voltage generator 134 and the second sidewall voltage generator 138 to their second terminals from their respective first terminals, which connect the first sidewall electrodes 136 and the second Both of the sidewall electrodes 140 are grounded.

請參照第5圖，提供用以移除累積在加工腔室側壁上的副產物的方法之一些實施例的流程圖500。然而本揭露所揭示的方法或其他繪示及/或說明的方法可在本揭露中繪示及/或說明為一系列動作或事件。應理解的是，此動作或事件所繪示的順序不應以限制性的意義來解讀。舉例而言，部分動作可能與本揭露所繪示及/或說明的動作或事件以不同的順序及/或同時進行。另外，並不需要所有繪示的動作來實施本揭露之一或多個方面或實施例，且本揭露之一或多個動作可以一或多個分開的動作及/或階段來進行。 Please refer to FIG. 5, which provides a flowchart 500 of some embodiments of a method for removing by-products accumulated on the side wall of the processing chamber. However, the method disclosed in the present disclosure or other methods shown and/or described may be illustrated and/or described in the present disclosure as a series of actions or events. It should be understood that the sequence of the actions or events should not be interpreted in a restrictive sense. For example, some actions may be performed in a different order and/or at the same time as the actions or events illustrated and/or described in this disclosure. In addition, not all the illustrated actions are required to implement one or more aspects or embodiments of the present disclosure, and one or more actions of the present disclosure may be performed in one or more separate actions and/or stages.

在操作502，降低設置有工件的加工腔室的壓力。 操作502的範例可參考先前繪示的第3A圖。 In operation 502, the pressure of the processing chamber provided with the workpiece is reduced. For an example of operation 502, please refer to the previously shown FIG. 3A.

在操作504，對設置於加工腔室內的工件進行加工，此加工可能會導致副產物累積在加工腔室的側壁上。操作504的範例可參考先前繪示的第3B圖。 In operation 504, the workpiece disposed in the processing chamber is processed, and this processing may cause by-products to accumulate on the sidewall of the processing chamber. For an example of operation 504, please refer to the previously shown FIG. 3B.

在操作506，從加工腔室移出加工後的工件。操作506的範例可參考先前繪示的第3C圖。 In operation 506, the processed workpiece is removed from the processing chamber. For an example of operation 506, please refer to the previously shown Figure 3C.

在操作508，降低加工腔室的壓力。操作508的範例可參考先前繪示的第3C圖。 At operation 508, the pressure of the processing chamber is reduced. For an example of operation 508, please refer to the previously shown FIG. 3C.

在操作510，透過施加射頻(RF)訊號至射頻天線，在加工腔室內由加工氣體產生清潔電漿。操作510的範例可參考先前繪示的第3D圖。 In operation 510, by applying a radio frequency (RF) signal to the radio frequency antenna, a clean plasma is generated from the processing gas in the processing chamber. For an example of operation 510, refer to the 3D diagram previously shown.

在操作512，下方電極係連接至第一電位。操作512的範例可參考先前繪示的第3D圖。 In operation 512, the lower electrode is connected to the first potential. For an example of operation 512, refer to the 3D diagram previously shown.

在操作514，對側壁電極施加具有第二電位的偏壓，其中第二電位的值大於第一電位的值，以促使對位於加工腔室側壁上的副產物的離子轟擊。操作514的範例可參考先前繪示的第3D圖。 In operation 514, a bias voltage having a second potential is applied to the sidewall electrode, wherein the value of the second potential is greater than the value of the first potential to promote ion bombardment of the by-products located on the sidewall of the processing chamber. For an example of operation 514, refer to the 3D diagram previously shown.

在操作516，從加工腔室排出加工氣體及副產物。操作516的範例可參考先前繪示的第3E圖。 At operation 516, the process gas and by-products are discharged from the process chamber. For an example of operation 516, refer to FIG. 3E shown previously.

因此，由上述內容可理解的是，本發明實施例係有關於一種改良的方法(及相關裝置)，用以移除累積於半導體加工腔室側壁上的副產物。 Therefore, it can be understood from the above content that the embodiment of the present invention relates to an improved method (and related device) for removing by-products accumulated on the sidewall of the semiconductor processing chamber.

因此，在一些實施例中，本發明實施例提供一種加工腔室的清潔方法。此方法包含將加工氣體引入加工腔室中， 其中加工腔室具有沿加工腔室的側壁的副產物。利用射頻(RF)訊號由加工氣體產生電漿。將設置於加工腔室側壁內的下方電極連接至第一電位。同時，對側壁電極施加具有第二電位的偏壓，以促使對副產物的離子轟擊，其中第二電位的值大於第一電位的值。從加工腔室排出加工氣體。在一些實施例中，此方法更包含利用蝕刻電漿蝕刻工件，其中透過蝕刻電漿使得從工件剝落的材料附著至加工腔室的側壁，形成副產物。在將加工氣體引入加工腔室中之前，從加工腔室移出工件。在一些實施例中，加工氣體包含氯或氧。在一些實施例中，第一電位大致上等同於接地，且第二電位係介於約0V至約負600V之間。在一些實施例中，副產物包含惰性金屬。在一些實施例中，對側壁電極施加偏壓約200秒至約600秒。 Therefore, in some embodiments, embodiments of the present invention provide a method for cleaning a processing chamber. This method includes introducing a process gas into a process chamber, wherein the process chamber has by-products along the side walls of the process chamber. Using radio frequency (RF) signals to generate plasma from the process gas. The lower electrode arranged in the side wall of the processing chamber is connected to the first potential. At the same time, a bias voltage with a second potential is applied to the sidewall electrodes to promote ion bombardment of the by-products, wherein the value of the second potential is greater than the value of the first potential. The processing gas is discharged from the processing chamber. In some embodiments, the method further includes etching the workpiece using etching plasma, wherein the material peeled off from the workpiece adheres to the sidewall of the processing chamber through the etching plasma to form by-products. Before introducing the processing gas into the processing chamber, the workpiece is removed from the processing chamber. In some embodiments, the process gas contains chlorine or oxygen. In some embodiments, the first potential is substantially equivalent to ground, and the second potential is between about 0V and about minus 600V. In some embodiments, the by-products include inert metals. In some embodiments, the sidewall electrodes are biased for about 200 seconds to about 600 seconds.

在其他實施例中，本發明實施例提供一種電漿加工裝置，包含：加工腔室、第一射頻功率產生器、側壁電壓產生器以及第二射頻功率產生器。加工腔室包含下方電極，其中下方電極排列於靜電吸盤的上表面下方，且位於加工腔室的側壁之間，靜電吸盤是配置用於接收工件。第一射頻功率產生器電性連接至射頻天線。側壁電壓產生器電性連接至側壁電極。第二射頻功率產生器電性連接至下方電極。在一些實施例中，側壁電極為加工腔室的側壁。在一些實施例中，側壁電壓產生器施加直流電偏壓至側壁電極，以促使對位於加工腔室側壁上的非揮發性副產物的離子轟擊。在一些實施例中，側壁電壓產生器包括一開關元件，開關元件具有連接至一第一電位的一第一端子，以及連接至一電壓產生器的一第二端子。在一些實施 例中，側壁電極係藉由加工腔室的側壁與靜電吸盤分隔。在一些實施例中，第二射頻功率產生器包含開關元件，開關元件具有連接至第一電位的第一端子，以及連接至射頻訊號產生器的第二端子。 In other embodiments, an embodiment of the present invention provides a plasma processing apparatus, including: a processing chamber, a first radio frequency power generator, a sidewall voltage generator, and a second radio frequency power generator. The processing chamber includes a lower electrode, wherein the lower electrode is arranged below the upper surface of the electrostatic chuck and is located between the side walls of the processing chamber. The electrostatic chuck is configured to receive a workpiece. The first radio frequency power generator is electrically connected to the radio frequency antenna. The sidewall voltage generator is electrically connected to the sidewall electrode. The second radio frequency power generator is electrically connected to the lower electrode. In some embodiments, the sidewall electrode is the sidewall of the processing chamber. In some embodiments, the sidewall voltage generator applies a direct current bias to the sidewall electrodes to promote ion bombardment of non-volatile byproducts located on the sidewalls of the processing chamber. In some embodiments, the sidewall voltage generator includes a switching element having a first terminal connected to a first potential, and a second terminal connected to a voltage generator. In some embodiments, the sidewall electrodes are separated from the electrostatic chuck by the sidewall of the processing chamber. In some embodiments, the second radio frequency power generator includes a switching element, the switching element has a first terminal connected to the first potential, and a second terminal connected to the radio frequency signal generator.

在另一些實施例中，本發明實施例提供一種加工腔室的清潔方法，包含：將側壁電壓產生器的開關元件連接至第一電位，以將側壁電極連接至第一電位，將第二射頻功率產生器的開關元件連接至第二電位，以將下方電極連接至第二電位，對基板進行加工，其中基板包含位於加工腔室內的第一材料，此加工會產生副產物，副產物包含第一材料，並附著至加工腔室的側壁，從加工腔室移出加工後的基板，將加工氣體引入加工腔室，將第二射頻功率產生器的開關元件切換至第一電位，且同時將側壁電壓產生器的開關元件切換至第三電位，藉由將第一射頻功率產生器連接至射頻天線，在加工腔室內產生清潔電漿，以及從加工腔室排出加工氣體及副產物。在一實施例中，將側壁電壓產生器的開關元件連接至第三電位促使清潔電漿的離子轟擊副產物。在一實施例中，在從加工腔室移出加工後的基板之後，引入加工氣體。在一實施例中，第二電位的值及第三電位的值皆分別大於第一電位的值。在一實施例中，第一電位大致上等同於接地，第二電位係介於約0V至約負600V之間，且第三電位係介於約0V至約負600V之間。在一實施例中，第一材料包含惰性金屬。在一實施例中，將側壁電壓產生器的開關元件連接至第三電位約200秒至約600秒，使得加工氣體能夠使副產物從加工腔室的側壁上剝落。在一實施例中， 側壁電極連續地圍繞加工腔室的周長延伸。 In other embodiments, embodiments of the present invention provide a method for cleaning a processing chamber, including: connecting a switching element of a sidewall voltage generator to a first potential, so as to connect the sidewall electrodes to the first potential, and connecting the second radio frequency The switching element of the power generator is connected to the second potential to connect the lower electrode to the second potential to process the substrate. The substrate contains the first material in the processing chamber. This processing will produce by-products. The by-products include the first material. A material attached to the side wall of the processing chamber, remove the processed substrate from the processing chamber, introduce processing gas into the processing chamber, switch the switching element of the second RF power generator to the first potential, and simultaneously switch the side wall The switching element of the voltage generator is switched to the third potential, and by connecting the first radio frequency power generator to the radio frequency antenna, a clean plasma is generated in the processing chamber, and processing gas and by-products are discharged from the processing chamber. In one embodiment, connecting the switching element of the sidewall voltage generator to the third potential promotes ion bombardment by-products of the cleaning plasma. In one embodiment, after removing the processed substrate from the processing chamber, the processing gas is introduced. In an embodiment, the value of the second potential and the value of the third potential are respectively greater than the value of the first potential. In one embodiment, the first potential is substantially equivalent to ground, the second potential is between about 0V and about negative 600V, and the third potential is between about 0V and about negative 600V. In one embodiment, the first material includes an inert metal. In one embodiment, the switching element of the side wall voltage generator is connected to the third potential for about 200 seconds to about 600 seconds, so that the processing gas can peel off the by-products from the side walls of the processing chamber. In an embodiment, the sidewall electrode continuously extends around the circumference of the processing chamber.

以上概述了許多實施例的部件，使本發明所屬技術領域中具有通常知識者可以更加理解本發明實施例的各方面。本發明所屬技術領域中具有通常知識者應可理解，可輕易地以本發明實施例為基礎來設計或改變其他製程及結構，以實現與在此介紹的實施例相同的目的及/或達到與在此介紹的實施例相同的優點。本發明所屬技術領域中具有通常知識者也應了解，這些相等的結構並未背離本發明的精神與範圍。在不背離本發明的精神與範圍之前提下，可對本發明實施例進行各種改變、置換及變動。 The components of many embodiments are summarized above, so that those with ordinary knowledge in the technical field of the present invention can better understand various aspects of the embodiments of the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains should understand that they can easily design or change other manufacturing processes and structures based on the embodiments of the present invention to achieve the same purpose and/or as those of the embodiments described herein. The embodiments described here have the same advantages. Those with ordinary knowledge in the technical field to which the present invention belongs should also understand that these equivalent structures do not depart from the spirit and scope of the present invention. Without departing from the spirit and scope of the present invention, various changes, substitutions and alterations can be made to the embodiments of the present invention.

500‧‧‧流程圖 500‧‧‧Flowchart

502、504、506、508、510、512、514、516‧‧‧操作 502, 504, 506, 508, 510, 512, 514, 516‧‧‧Operation

Claims (10)

一種加工腔室的清潔方法，包括：將一加工氣體引入一加工腔室中，其中該加工腔室具有沿該加工腔室的複數個側壁的一副產物；利用一射頻(RF)訊號由該加工氣體產生一電漿；將設置於該加工腔室的該等側壁內的一下方電極連接至一第一電位；以設置於該加工腔室中的一靜電吸盤基座支撐該下方電極和一靜電吸盤，其中該靜電吸盤基座將該下方電極、該靜電吸盤與該加工腔室的一下方表面垂直地分隔開；同時對一側壁電極施加具有一第二電位的一偏壓，以促使對該副產物的離子轟擊，其中該第二電位的值大於該第一電位的值；以及從該加工腔室排出該加工氣體。 A method for cleaning a processing chamber includes: introducing a processing gas into a processing chamber, wherein the processing chamber has a by-product along a plurality of sidewalls of the processing chamber; and using a radio frequency (RF) signal from the The processing gas generates a plasma; a lower electrode provided in the side walls of the processing chamber is connected to a first potential; an electrostatic chuck base provided in the processing chamber supports the lower electrode and a An electrostatic chuck, wherein the electrostatic chuck base vertically separates the lower electrode, the electrostatic chuck, and a lower surface of the processing chamber; at the same time, a bias voltage with a second potential is applied to a side wall electrode to promote Ion bombardment of the by-product, wherein the value of the second potential is greater than the value of the first potential; and the processing gas is discharged from the processing chamber. 如申請專利範圍第1項所述之加工腔室的清潔方法，更包括：利用一蝕刻電漿蝕刻一工件，其中透過該蝕刻電漿使得從該工件剝落的一材料附著至該加工腔室的該等側壁，以形成該副產物；以及在將該加工氣體引入該加工腔室中之前，從該加工腔室移出該工件。 The cleaning method of the processing chamber as described in the first item of the patent application further includes: etching a workpiece with an etching plasma, wherein a material peeled from the workpiece is attached to the processing chamber through the etching plasma The side walls to form the by-product; and before the process gas is introduced into the process chamber, the workpiece is removed from the process chamber. 一種電漿加工裝置，包括：一加工腔室，包括一下方電極，該下方電極排列於一靜電吸盤的一上表面下方，且位於該加工腔室的複數個側壁之 間，其中該靜電吸盤的該上表面是配製用於接收一工件；一第一射頻功率產生器，電性連接至一射頻天線；一側壁電壓產生器，電性連接至一側壁電極；以及一第二射頻功率產生器，電性連接至該下方電極。 A plasma processing device includes: a processing chamber, including a lower electrode, the lower electrode is arranged below an upper surface of an electrostatic chuck and located on a plurality of side walls of the processing chamber Among them, the upper surface of the electrostatic chuck is configured to receive a workpiece; a first radio frequency power generator electrically connected to a radio frequency antenna; a side wall voltage generator electrically connected to a side wall electrode; and a The second radio frequency power generator is electrically connected to the lower electrode. 如申請專利範圍第3項所述之電漿加工裝置，其中該側壁電極為該加工腔室的該等側壁的其中之一。 The plasma processing device described in item 3 of the scope of patent application, wherein the side wall electrode is one of the side walls of the processing chamber. 如申請專利範圍第3項所述之電漿加工裝置，其中該側壁電壓產生器施加一直流電偏壓至該側壁電極，以促使對位於該加工腔室的該等側壁的其中之一者之上的一非揮發性副產物的離子轟擊。 The plasma processing device described in item 3 of the scope of the patent application, wherein the side wall voltage generator applies a DC bias to the side wall electrode to promote the alignment on one of the side walls of the processing chamber Ion bombardment of a non-volatile by-product. 如申請專利範圍第3項所述之電漿加工裝置，其中該側壁電壓產生器包括一開關元件，該開關元件具有連接至一第一電位的一第一端子、以及連接至一電壓產生器的一第二端子。 According to the plasma processing device described in claim 3, the sidewall voltage generator includes a switching element having a first terminal connected to a first potential, and a voltage generator connected to A second terminal. 一種加工腔室的清潔方法，包括：將一側壁電壓產生器的一開關元件連接至一第一電位，以將一側壁電極連接至該第一電位；將一第二射頻功率產生器的一開關元件連接至一第二電位，以將一下方電極連接至該第二電位，其中該第二電位的值係大於該第一電位的值；當該側壁電極連接至該第一電位，且該下方電極連接至該第二電位時，對一基板進行加工，其中該基板包括位於一加工腔室內的一第一材料，該加工產生一副產物，該副產物包括該第一材料，並附著至該加工腔室的該側壁； 從該加工腔室移出加工後的該基板；將一加工氣體引入該加工腔室；在該副產物附著至該加工腔室的該側壁之後，將該第二射頻功率產生器的該開關元件切換至該第一電位，且同時將該側壁電壓產生器的該開關元件切換至一第三電位；藉由將一第一射頻功率產生器連接至一射頻天線，在該加工腔室內產生一清潔電漿；以及從該加工腔室排出該加工氣體及該副產物。 A method for cleaning a processing chamber includes: connecting a switching element of a side wall voltage generator to a first potential to connect a side wall electrode to the first potential; and switching a switch of a second radio frequency power generator The device is connected to a second potential to connect a lower electrode to the second potential, wherein the value of the second potential is greater than the value of the first potential; when the sidewall electrode is connected to the first potential, and the lower When the electrode is connected to the second potential, a substrate is processed, wherein the substrate includes a first material in a processing chamber, the processing produces a by-product, and the by-product includes the first material and adheres to the The side wall of the processing chamber; Remove the processed substrate from the processing chamber; introduce a processing gas into the processing chamber; after the by-product is attached to the side wall of the processing chamber, switch the switching element of the second radio frequency power generator To the first potential, and at the same time switch the switching element of the sidewall voltage generator to a third potential; by connecting a first radio frequency power generator to a radio frequency antenna, a clean electricity is generated in the processing chamber Slurry; and discharge the processing gas and the by-products from the processing chamber. 如申請專利範圍第7項所述之加工腔室的清潔方法，其中將該側壁電壓產生器的該開關元件連接至該第三電位促使該清潔電漿的離子轟擊該副產物。 The method for cleaning a processing chamber as described in claim 7, wherein the switching element of the side wall voltage generator is connected to the third potential to cause ions of the cleaning plasma to bombard the by-product. 如申請專利範圍第7項所述之加工腔室的清潔方法，其中在從該加工腔室移出加工後的該基板之後，引入該加工氣體。 According to the method for cleaning a processing chamber as described in item 7 of the scope of patent application, the processing gas is introduced after removing the processed substrate from the processing chamber. 如申請專利範圍第7項所述之加工腔室的清潔方法，其中該第三電位的值大於該第一電位的值。 According to the cleaning method of the processing chamber described in item 7 of the scope of patent application, the value of the third potential is greater than the value of the first potential.
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