TWI710024B - Method for cleaning processing chamber and plasma processing apparatus - Google Patents
Method for cleaning processing chamber and plasma processing apparatus Download PDFInfo
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- TWI710024B TWI710024B TW107122304A TW107122304A TWI710024B TW I710024 B TWI710024 B TW I710024B TW 107122304 A TW107122304 A TW 107122304A TW 107122304 A TW107122304 A TW 107122304A TW I710024 B TWI710024 B TW I710024B
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- 238000000034 method Methods 0.000 title claims abstract description 85
- 238000004140 cleaning Methods 0.000 title claims abstract description 33
- 239000006227 byproduct Substances 0.000 claims abstract description 93
- 238000010849 ion bombardment Methods 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims description 46
- 238000005530 etching Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 1
- 239000007789 gas Substances 0.000 description 70
- 239000004065 semiconductor Substances 0.000 description 23
- 239000002184 metal Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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Abstract
Description
本發明實施例係有關於一種加工腔室的清潔方法及實施此方法的電漿加工裝置,特別是有關於一種利用電位差來促使離子轟擊的加工腔室的清潔方法及實施此方法的電漿加工裝置。 The embodiment of the present invention relates to a method for cleaning a processing chamber and a plasma processing device implementing this method, and in particular to a method for cleaning a processing chamber that uses a potential difference to promote ion bombardment and plasma processing for implementing this method Device.
在製造現代電子裝置的整個過程中,廣泛地使用半導體加工設備,例如電漿增強化學氣相沉積(PE-CVD)系統、電漿蝕刻系統、以及濺鍍系統。此半導體加工設備可包含加工腔室,有助於包含由此設備執行的頻繁反應製程。由於進行這些製程的緣故,可能會有副產物形成在加工腔室的側壁上,導致設備的性能降低及/或汙染,其可能會導致電子裝置的產能降低。在試圖要保持設備效率以及電子裝置的產能的情況下,通常會執行清潔製程,以移除積聚在加工腔室側壁上的副產物。 In the entire process of manufacturing modern electronic devices, semiconductor processing equipment, such as plasma enhanced chemical vapor deposition (PE-CVD) systems, plasma etching systems, and sputtering systems are widely used. The semiconductor processing equipment may include a processing chamber, which helps to include frequent reaction processes performed by the equipment. Due to these processes, by-products may be formed on the sidewalls of the processing chamber, resulting in reduced performance and/or pollution of the equipment, which may reduce the productivity of the electronic device. In an attempt to maintain equipment efficiency and the productivity of electronic devices, a cleaning process is usually performed to remove by-products accumulated on the side walls of the processing chamber.
本發明實施例提供一種加工腔室的清潔方法,包含:將加工氣體引入加工腔室中,其中加工腔室具有沿加工腔室的側壁的副產物,利用射頻(RF)訊號由加工氣體產生電漿,將設置於加工腔室側壁內的下方電極連接至第一電位,同時對 側壁電極施加具有第二電位的偏壓,以促使對副產物的離子轟擊,其中第二電位的值大於第一電位的值,以及從加工腔室排出加工氣體。 The embodiment of the present invention provides a method for cleaning a processing chamber, including: introducing a processing gas into the processing chamber, wherein the processing chamber has by-products along the sidewalls of the processing chamber, and generating electricity from the processing gas using radio frequency (RF) signals Slurry, connect the lower electrode arranged in the side wall of the processing chamber to the first potential, and apply a bias with a second potential to the side wall electrodes to promote ion bombardment of the by-products, wherein the value of the second potential is greater than the first The value of the potential and the exhaust of the processing gas from the processing chamber.
本發明實施例提供一種電漿加工裝置,包含:加工腔室、第一射頻功率產生器、側壁電壓產生器以及第二射頻功率產生器。,其中該靜電吸盤的該上表面是配製用於接收一工件加工腔室包含下方電極,其中下方電極排列於靜電吸盤的上表面下方,且位於加工腔室的側壁之間,靜電吸盤的上表面是配置用於接收工件。第一射頻功率產生器電性連接至射頻天線。側壁電壓產生器電性連接至側壁電極。第二射頻功率產生器電性連接至下方電極。 The embodiment of the present invention provides a plasma processing device, including: a processing chamber, a first radio frequency power generator, a sidewall voltage generator, and a second radio frequency power generator. , Wherein the upper surface of the electrostatic chuck is configured to receive a workpiece and the processing chamber includes a lower electrode, wherein the lower electrode is arranged below the upper surface of the electrostatic chuck and is located between the side walls of the processing chamber, and the upper surface of the electrostatic chuck Is configured to receive artifacts. The first radio frequency power generator is electrically connected to the radio frequency antenna. The sidewall voltage generator is electrically connected to the sidewall electrode. The second radio frequency power generator is electrically connected to the lower electrode.
本發明實施例提供一種加工腔室的清潔方法,包含:將側壁電壓產生器的開關元件連接至第一電位,以將側壁電極連接至第一電位,將第二射頻功率產生器的開關元件連接至第二電位,以將下方電極連接至第二電位,對基板進行加工,其中基板包含位於加工腔室內的第一材料,此加工會產生副產物,副產物包含第一材料,並附著至加工腔室的側壁,從加工腔室移出加工後的基板,將加工氣體引入加工腔室,將第二射頻功率產生器的開關元件切換至第一電位,且同時將側壁電壓產生器的開關元件切換至第三電位,藉由將第一射頻功率產生器連接至射頻天線,在加工腔室內產生清潔電漿,以及從加工腔室排出加工氣體及副產物。 An embodiment of the present invention provides a method for cleaning a processing chamber, including: connecting a switching element of a sidewall voltage generator to a first potential, so as to connect a sidewall electrode to the first potential, and connecting a switching element of a second radio frequency power generator To the second potential to connect the lower electrode to the second potential to process the substrate. The substrate contains the first material in the processing chamber. This processing will produce by-products. The by-products contain the first material and adhere to the processing. On the side wall of the chamber, remove the processed substrate from the processing chamber, introduce processing gas into the processing chamber, switch the switching element of the second RF power generator to the first potential, and at the same time switch the switching element of the side wall voltage generator To the third potential, by connecting the first radio frequency power generator to the radio frequency antenna, clean plasma is generated in the processing chamber, and processing gas and by-products are discharged from the processing chamber.
100‧‧‧半導體加工系統 100‧‧‧Semiconductor processing system
102‧‧‧加工腔室 102‧‧‧Processing chamber
104‧‧‧第一加工腔室側壁(加工腔室側壁) 104‧‧‧First processing chamber side wall (processing chamber side wall)
106‧‧‧第二加工腔室側壁(加工腔室側壁) 106‧‧‧Second processing chamber side wall (processing chamber side wall)
108‧‧‧下方電極 108‧‧‧Lower electrode
110‧‧‧靜電吸盤 110‧‧‧Electrostatic chuck
112‧‧‧靜電吸盤基座 112‧‧‧Electrostatic chuck base
114‧‧‧工件 114‧‧‧Workpiece
116‧‧‧基板 116‧‧‧Substrate
118‧‧‧金屬層 118‧‧‧Metal layer
120‧‧‧光阻層 120‧‧‧Photoresist layer
121‧‧‧射頻天線 121‧‧‧RF antenna
122‧‧‧加工氣體入口端 122‧‧‧Processing gas inlet
123‧‧‧射頻天線絕緣子 123‧‧‧RF antenna insulator
124‧‧‧加工腔室氣體出口端 124‧‧‧Processing chamber gas outlet
125‧‧‧電漿源 125‧‧‧Plasma source
126‧‧‧加工氣體 126‧‧‧Processing gas
127‧‧‧第一射頻功率產生器 127‧‧‧The first RF power generator
128‧‧‧下方電極射頻功率產生器 128‧‧‧Lower electrode RF power generator
129‧‧‧電漿 129‧‧‧Plasma
130‧‧‧靜電吸盤功率產生器 130‧‧‧Electrostatic chuck power generator
132‧‧‧第二射頻功率產生器 132‧‧‧Second RF Power Generator
134‧‧‧第一側壁電壓產生器 134‧‧‧First side wall voltage generator
136‧‧‧第一側壁電極 136‧‧‧First side wall electrode
138‧‧‧第二側壁電壓產生器 138‧‧‧Second side wall voltage generator
140‧‧‧第二側壁電極 140‧‧‧Second side wall electrode
202‧‧‧射頻訊號產生器 202‧‧‧RF signal generator
204‧‧‧開關元件 204‧‧‧Switch element
206‧‧‧直流電偏壓產生器 206‧‧‧DC bias generator
208‧‧‧加熱元件 208‧‧‧Heating element
216‧‧‧清潔電漿 216‧‧‧Clean plasma
302‧‧‧蝕刻電漿 302‧‧‧Etching Plasma
304‧‧‧蝕刻氣體 304‧‧‧Etching gas
310‧‧‧副產物 310‧‧‧By-product
402‧‧‧功率開關分歧管 402‧‧‧Power switch branch tube
500‧‧‧流程圖 500‧‧‧Flowchart
502、504、506、508、510、512、514、516‧‧‧操作 502, 504, 506, 508, 510, 512, 514, 516‧‧‧Operation
根據以下的詳細說明並配合所附圖式以更加了解 本發明實施例的概念。應注意的是,根據本產業的標準慣例,圖式中的各種部件未必按照比例繪製。事實上,可能任意地放大或縮小各種部件的尺寸,以做清楚的說明。 According to the following detailed description and the accompanying drawings, the concept of the embodiments of the present invention can be better understood. It should be noted that, according to the standard practice of this industry, the various components in the drawings are not necessarily drawn to scale. In fact, it is possible to arbitrarily enlarge or reduce the size of various components to make a clear description.
第1圖繪示能夠實施本發明實施例之方法的半導體加工系統之一些實施例的圖式,用以移除累積在加工腔室側壁上的副產物。 FIG. 1 shows a diagram of some embodiments of a semiconductor processing system capable of implementing the method of the embodiment of the present invention to remove by-products accumulated on the sidewall of the processing chamber.
第2A-2B圖繪示能夠實施本發明實施例之方法的半導體加工系統之更詳細實施例的一系列圖式,用以移除累積在加工腔室側壁上的副產物。 Figures 2A-2B show a series of drawings of a more detailed embodiment of a semiconductor processing system capable of implementing the method of the embodiment of the present invention to remove by-products accumulated on the sidewall of the processing chamber.
第3A-3G圖繪示用以移除累積在加工腔室側壁上的副產物的方法之一些實施例的一系列圖式。 Figures 3A-3G show a series of diagrams of some embodiments of the method for removing by-products accumulated on the sidewall of the processing chamber.
第4A-4B圖繪示用以移除累積在加工腔室側壁上的副產物的方法之另一些實施例的一系列圖式。 FIGS. 4A-4B show a series of diagrams of other embodiments of the method for removing the by-products accumulated on the sidewall of the processing chamber.
第5圖繪示用以移除累積在加工腔室側壁上的副產物的方法之一些實施例的流程圖。 FIG. 5 shows a flowchart of some embodiments of a method for removing by-products accumulated on the side wall of the processing chamber.
以下將配合圖式說明本發明實施例,其中通篇使用相似的標號以指稱相似的元件,且其中所繪示的結構未必按照比例繪製。將可理解的是,此實施方式及對應的圖式並不會以任何方式限制本發明實施例的範圍,且實施方式及圖式僅提供一些範例,來說明能夠闡明本身發明概念的一些方式。 The embodiments of the present invention will be described below in conjunction with the drawings, in which similar reference numerals are used throughout to refer to similar elements, and the structures shown therein are not necessarily drawn to scale. It will be understood that this embodiment and the corresponding drawings do not limit the scope of the embodiments of the present invention in any way, and the embodiments and drawings only provide some examples to illustrate some ways of clarifying the inventive concept itself.
以下的揭露內容提供許多不同的實施例或範例以實施本發明實施例的不同部件。以下敘述構件及配置的特定範例,以簡化本發明實施例的說明。當然,這些特定的範例僅為 示範並非用以限定本發明實施例。例如,在以下的敘述中提及第一部件形成於第二部件上或上方,即表示其可包含第一部件與第二部件是直接接觸的實施例,亦可包含有附加部件形成於第一部件與第二部件之間,而使第一部件與第二部件可能未直接接觸的實施例。另外,在以下的揭露內容的不同範例中可能重複使用相同的參考符號及/或標記。這些重複係為了簡化與清晰之目的,並非用以指定所討論的不同實施例及/或結構之間的關係。 The following disclosure provides many different embodiments or examples to implement different components of the embodiments of the present invention. Specific examples of components and configurations are described below to simplify the description of the embodiments of the present invention. Of course, these specific examples are only for demonstration and are not intended to limit the embodiments of the present invention. For example, in the following description, it is mentioned that the first part is formed on or above the second part, which means that it may include an embodiment in which the first part and the second part are in direct contact, or may include additional parts formed on the first part. Between the component and the second component, the first component and the second component may not be in direct contact. In addition, the same reference symbols and/or marks may be used repeatedly in different examples of the following disclosure. These repetitions are for the purpose of simplification and clarity, and are not used to specify the relationship between the different embodiments and/or structures discussed.
此外,在此可使用與空間相關用詞。例如「底下」、「下方」、「較低的」、「上方」、「較高的」及類似的用詞,以便於描述圖式中繪示的一個元件或部件與另一個(些)元件或部件之間的關係。除了在圖式中繪示的方位外,這些空間相關用詞意欲包含使用中或操作中的裝置之不同方位。裝置可能被轉向不同方位(旋轉90度或其他方位),且在此使用的空間相關詞也可依此做同樣的解釋。 In addition, words related to space can be used here. For example, "bottom", "below", "lower", "above", "higher" and similar terms to facilitate the description of one element or part and another element(s) shown in the diagram Or the relationship between components. In addition to the orientations depicted in the diagrams, these spatially related terms are intended to include different orientations of the device in use or operation. The device may be turned to different orientations (rotated by 90 degrees or other orientations), and the spatially related words used here can be interpreted in the same way.
積體電路(IC)科技不斷地進步。這些進步通常涉及幾何尺寸的縮小,以達成更低的製造成本、更高的裝置積體密度、更快的速度及更好的性能。由於裝置尺寸縮小的緣故,在加工腔室中發生側壁汙染(舉例而言,因不想要的汙染物由加工腔室的側壁剝落,並累積在基板表面上而導致基板的汙染)的負面效應會被放大。 Integrated circuit (IC) technology continues to advance. These advancements usually involve the reduction of geometric dimensions to achieve lower manufacturing costs, higher device density, faster speed and better performance. Due to the downsizing of the device, sidewall contamination in the processing chamber (for example, because unwanted contaminants peel off from the sidewall of the processing chamber and accumulate on the surface of the substrate, resulting in negative effects of substrate contamination) magnified.
舉例而言,可將工件裝載至電漿蝕刻系統的加工腔室中。工件可包含設置於惰性金屬層(例如:銀、銅等)上之圖案化的光阻層。電漿加工系統在加工腔室內產生電漿,以選 擇性地蝕刻惰性金屬層。在此製程期間,會產生非揮發性的副產物,並往往會累積在加工腔室的側壁上。當此工件(或是後續的工件)在加工腔室中進行加工時,電漿將會破壞形成於加工腔室側壁上之非揮發性副產物的部分鍵結,造成非揮發性副產物的原子從側壁上剝落。因此,非揮發性副產物的原子可能會累積在設置於加工腔室內的工件上成為污染物。在工件上累積的非揮發性副產物可導致此有缺陷的工件上之積體電路功能有瑕疵。由於缺乏對此非揮發性的副產物的物理轟擊,目前的無晶圓自動清潔(waferless auto-clean;WAC)製程無法有效地從加工腔室側壁移除此非揮發性的副產物。因此,一種有效地從加工腔室側壁移除非揮發性副產物之加工腔室的清潔方法(及相關的系統)將可提升半導體加工設備的效率,以改善積體電路的可靠度並降低成本。 For example, the workpiece can be loaded into the processing chamber of the plasma etching system. The workpiece may include a patterned photoresist layer disposed on an inert metal layer (such as silver, copper, etc.). The plasma processing system generates plasma in the processing chamber to selectively etch the inert metal layer. During this process, non-volatile by-products are generated and tend to accumulate on the side walls of the processing chamber. When this workpiece (or a subsequent workpiece) is processed in the processing chamber, the plasma will destroy the partial bonds of the non-volatile by-products formed on the side walls of the processing chamber, resulting in the atoms of the non-volatile by-products Peel off the side wall. Therefore, atoms of non-volatile by-products may accumulate on the workpieces placed in the processing chamber and become contaminants. The accumulation of non-volatile by-products on the workpiece can cause defects in the function of the integrated circuit on the defective workpiece. Due to the lack of physical bombardment of this non-volatile by-product, the current waferless auto-clean (WAC) process cannot effectively remove this non-volatile by-product from the sidewall of the processing chamber. Therefore, a process chamber cleaning method (and related systems) that effectively removes non-volatile by-products from the side walls of the process chamber will improve the efficiency of semiconductor processing equipment to improve the reliability of integrated circuits and reduce costs .
在一些實施例中,本發明實施例是有關於一種有效地從加工腔室側壁移除非揮發性副產物之清潔加工腔室的方法(及其相關系統)。此方法包含對位於加工腔室內的工件執行蝕刻製程。在蝕刻製程期間,來自工件的副產物可能從工件上剝落並附著在加工腔室的側壁上。在完成蝕刻製程之後,從加工腔室移出工件。在從加工腔室移出工件之後,將加工氣體引入加工腔室中,且從加工氣體產生電漿。同時,對側壁電極施加偏壓,以促使對位於加工腔室側壁上的副產物進行離子轟擊。在已有效地轟擊副產物之後,可從加工腔室排出加工氣體及副產物。透過物理地轟擊副產物,可有效地從加工腔室的側壁移除副產物,且在排出加工氣體時一併排出。因此,由於改 良的方法改變了一般加工腔室之清潔製程,透過對側壁電極施加偏壓來促使離子轟擊,改良的方法可提升半導體加工設備的效率,以提升積體電路的可靠度,並降低積體電路的成本。 In some embodiments, the embodiments of the present invention relate to a method (and related systems) for cleaning a processing chamber that effectively removes non-volatile by-products from the sidewall of the processing chamber. The method includes performing an etching process on a workpiece located in a processing chamber. During the etching process, by-products from the workpiece may peel off the workpiece and adhere to the sidewall of the processing chamber. After the etching process is completed, the workpiece is removed from the processing chamber. After removing the workpiece from the processing chamber, the processing gas is introduced into the processing chamber, and plasma is generated from the processing gas. At the same time, a bias voltage is applied to the sidewall electrodes to promote ion bombardment of by-products located on the sidewalls of the processing chamber. After the by-products have been effectively bombarded, the processing gas and the by-products can be discharged from the processing chamber. By physically bombarding the by-products, the by-products can be effectively removed from the sidewalls of the processing chamber and discharged together when the processing gas is discharged. Therefore, because the improved method changes the cleaning process of the general processing chamber, the bias voltage is applied to the sidewall electrodes to promote ion bombardment. The improved method can improve the efficiency of semiconductor processing equipment to increase the reliability of integrated circuits and reduce The cost of integrated circuits.
請參照第1圖,其提供能夠實施本發明實施例之方法的半導體加工系統100之一些實施例的圖式,用以移除累積在加工腔室側壁上的副產物。 Please refer to FIG. 1, which provides a diagram of some embodiments of a
半導體加工系統100包含加工腔室102,其中加工腔室102具有第一加工腔室側壁104及第二加工腔室側壁106。舉例而言,加工腔室102可以是電漿增強化學氣相沉積(PE-CVD)腔室。加工腔室側壁104/106包含導電材料。在一些實施例中,加工腔室102可包含設置於加工腔室102之側壁上的介電層,此介電層將腔室內部與加工腔室102的外殼分隔開來。 The
下方電極108係設置於加工腔室102內。在一些實施例中,靜電吸盤110亦設置於加工腔室102內。在一些實施例中,靜電吸盤110包含下方電極108。在其他實施例中,靜電吸盤110包含下方電極108及靜電吸盤電極(圖未示)。此外,靜電吸盤110是用以在加工工件114的各階段中承載工件114。在一些實施例中,工件114包含設置於基板116上方的金屬層118,以及設置於金屬層118上方的光阻層120。在一些實施例中,金屬層118可以是惰性金屬,例如:銅、銀、金或其他一些惰性金屬。另外,靜電吸盤基座112可支撐下方電極108及靜電吸盤110。在一些實施例中,靜電吸盤基座112包含電性絕緣材料,用以使靜電吸盤110、下方電極108與加工腔室側壁絕緣。 The
加工腔室102更包含加工氣體入口端122及加工腔室氣體出口端124。在一些實施例中,加工氣體入口端122包含閥,以控制加工氣體126流入加工腔室102中。加工腔室氣體出口端124包含閥,以控制加工氣體126流出加工腔室102。另外,在一些實施例中,加工氣體入口端122及加工腔室氣體出口端124允許控制加工腔室102內的壓力。在一些實施例中,加工腔室氣體出口端124可用以與真空泵浦連通,以將加工腔室102抽至真空。在其他實施例中,半導體加工系統100包含真空泵浦,耦接至進入加工腔室102之單獨的孔洞,以允許將加工腔室102抽至真空。 The
半導體加工系統100也包含電漿源125,用以在加工腔室102內提供電漿。在一些實施例中,電漿源125可包含耦接至射頻天線121的第一射頻(RF)功率產生器127,其中射頻天線121藉由多個射頻天線絕緣子123,與加工腔室側壁104/106電性絕緣。在一些實施例中,射頻天線121可包含兩個短距離間隔的金屬電極,且可設置於加工腔室102的側壁內。此類型的射頻天線121可用於電容耦合電漿(capacitively coupled plasma;CCP)源中。在其他實施例中,射頻天線121可具有類似線圈的形狀,且可設置於加工腔室102的側壁外。此類型的射頻天線121可用於電感耦合電漿(inductively coupled plasma;ICP)源中。在另一些實施例中,射頻天線121可以是加工腔室102的側壁。第一射頻功率產生器127係用以對射頻天線121施加具有一電位的射頻訊號,以在加工腔室102內從加工氣體126形成電漿129。在一些實施例中,第一射頻功率產生器127在約 200W至約3000W的功率範圍內操作,並產生頻率介於約13.56MHz至約60MHz之間的射頻訊號。在一些實施例中,匹配網路係設置於第一射頻功率產生器127與射頻天線121之間。在其他實施例中,電漿源125可包含遠端電漿源,用以在上游電漿產生腔室內產生電漿,接著將此電漿提供至加工腔室102。 The
另外,半導體加工系統100包含耦接至下方電極108的下方電極射頻功率產生器128。下方電極射頻功率產生器128包含開關元件,用以在具有第一電位(例如約負600V)的第一端子與具有第二電位(例如約0V)的第二端子之間切換。在一些實施例中,第一端子亦耦接至射頻訊號產生器。下方電極射頻功率產生器係用以提供射頻訊號至下方電極108,以提升半導體加工系統100的效率(例如維持對電漿之電漿鞘層的控制)。在一些實施例中,下方電極射頻功率產生器128在約200W至約3000W的功率範圍內操作,並產生頻率介於約400kHz至約13.56MHz之間的射頻訊號。 In addition, the
在一些實施例中,下方電極射頻功率產生器128也提供訊號至設置於靜電吸盤110內的靜電吸盤電極(圖未示)。在其他實施例中,分開的靜電吸盤功率產生器130是用以施加電壓至靜電吸盤電極(圖未示)。在另一些實施例中,第二射頻功率產生器132包含靜電吸盤功率產生器130及下方電極射頻功率產生器128。 In some embodiments, the lower electrode
另外,半導體加工系統100包含耦接至第一側壁電極136的第一側壁電壓產生器134,以及耦接至第二側壁電極140的第二側壁電壓產生器138。在一些實施例中,第一側壁電 壓產生器134及第二側壁電壓產生器138可以是相同的電壓產生器。第一側壁電極136及第二側壁電極140包含導電材料。在一些實施例中,第一側壁電極136是第一加工腔室側壁104,且第二側壁電極140是第二加工腔室側壁106。在其他實施例中,第一側壁電極136是設置於第一加工腔室側壁104後方,且第二側壁電極140是設置於第二加工腔室側壁106後方。第一側壁電壓產生器134及第二側壁電壓產生器138係用以分別施加電壓至第一加工腔室側壁104及第二加工腔室側壁106。在一些實施例中,第一側壁電壓產生器134及第二側壁電壓產生器138可產生負交流電偏壓。 In addition, the
利用第一側壁電壓產生器134及第二側壁電壓產生器138施加電壓至加工腔室側壁104/106,增加將加工腔室內的氣體粒子被吸引至加工腔室側壁104/106的速度。氣體粒子的速度增加造成氣體粒子有足夠的能量去轟擊加工腔室側壁104/106上所收集的副產物,使得副產物從加工腔室側壁104/106剝落。一旦副產物剝落,可經由加工腔室氣體出口端124從加工腔室102排出副產物,藉此減少汙染在加工腔室102內之後續加工的基板。 The first side
請參照第2A-2B圖,其提供能夠實施本發明實施例之方法的半導體加工系統100之更詳細實施例的一系列圖式,用以移除累積在加工腔室側壁上的副產物。第2A圖繪示能夠實施本發明實施例之方法的半導體加工系統之更詳細實施例的剖面圖。第2B圖繪示能夠實施本發明實施例之方法的半導體加工系統之更詳細實施例的上視圖。 Please refer to FIGS. 2A-2B, which provide a series of drawings of a more detailed embodiment of the
如第2A-2B圖所示,第一射頻功率產生器127及第二射頻功率產生器132可更包含開關元件204及射頻訊號產生器202。第一射頻功率產生器127的開關元件204係設置於射頻訊號產生器202與射頻天線121之間。在一些實施例中,第一射頻功率產生器127的開關元件204是用以開啟或關閉連接射頻訊號產生器202與射頻天線121的電路。在其他實施例中,第一射頻功率產生器127的開關元件204是用以在連接至射頻訊號產生器202的第一端子與接地的第二端子之間切換。第二射頻功率產生器132的開關元件204係設置於射頻訊號產生器202與下方電極108之間。下方電極108是用以接收第一電位(例如約負600伏特(V))及第二電位(例如約0V)。第二射頻功率產生器132的開關元件204是用以在具有第一電位(例如約負600V)的第一端子與具有第二電位(例如約0V)的第二端子之間切換。在一些實施例中,第一端子亦耦接至射頻訊號產生器202。 As shown in FIGS. 2A-2B, the first
第一加工腔室側壁104可以是單一連續狀且為圓柱形的導電材料。在一些實施例中,第一側壁電極136可以是單一連續狀且為圓柱形的導電材料,並圍繞第一加工腔室側壁104。在此些實施例中,第一側壁電壓產生器134可連接至第一側壁電極136,並用以提供電壓至整個第一側壁電極136。在一些替代實施例中,複數個分開的側壁電極可圍繞第一加工腔室側壁104。在此些實施例中,分開的側壁電極可耦接至不同的側壁電壓產生器(舉例而言,第一側壁電極可耦接至第一側壁電壓產生器,而第二側壁電極可耦接至第二側壁電壓產生器)。 The
第一側壁電壓產生器134可包含開關元件204,用以在具有第一電位(例如約負600V)的第一端子與具有第二電位(例如約0V)的第二端子之間切換。在一些實施例中,第一端子亦耦接至直流電偏壓產生器206。在一些實施例中,直流電偏壓產生器206是交流電偏壓產生器。第一側壁電壓產生器134的開關元件204係設置於直流電偏壓產生器206與第一側壁電極136之間。開關元件204是用以在連接至直流電偏壓產生器206的第一端子與接地的第二端子之間切換。在一些實施例中,直流電偏壓產生器206輸出介於約0.1V至約600V的範圍內的負電壓。雖然未繪示於第2A-2B圖中,應理解的是,第二側壁電壓產生器138也可包含開關元件204及直流電偏壓產生器206。 The first
另外,在一些實施例中,半導體加工系統100包含加熱元件208,以控制加工腔室102內的溫度。在一些實施例中,加熱元件208為加工腔室側壁104/106。 In addition, in some embodiments, the
請參照第3A-3G圖,其提供用以移除累積在加工腔室側壁上的副產物的方法之一些實施例的一系列圖式。 Please refer to FIGS. 3A-3G, which provide a series of diagrams of some embodiments of the method for removing the by-products accumulated on the side wall of the processing chamber.
如第3A圖所示,提供半導體加工系統100。半導體加工系統100係將加工腔室102的壓力抽真空,以準備執行工件114的蝕刻製程。在一些實施例中,加工腔室102的壓力係控制在20毫托(mT)及100mT之間。將工件114設置於加工腔室102內的靜電吸盤110上。在一些實施例中,工件114包含設置於金屬層118上方的光阻層120,其中金屬層118係設置於基板116上方。 As shown in FIG. 3A, a
此外,當加工氣體入口端122的閥關閉時,加工腔 室氣體出口端124的閥則會開啟。真空泵浦(圖未示)可從加工腔室氣體出口端124的閥連接下游。真空泵浦是用以將氣體抽出加工腔室102外,以降低加工腔室102的壓力。在一些實施例中,半導體加工系統100執行清洗步驟,以在加工腔室102的壓力降低之前,從加工腔室102移除不想要的氣體分子。 In addition, when the valve at the processing
當加工腔室102的壓力降低時,設置於第一射頻功率產生器127中的開關元件204可開啟射頻天線121與第一射頻功率產生器127的射頻訊號產生器202之間的電路。另外,第二射頻功率產生器132的開關元件204可將下方電極108接地。此外,第一側壁電壓產生器134的開關元件204將第一側壁電極136接地。再者,第二側壁電壓產生器138的開關元件204將第二側壁電極140接地。 When the pressure of the
如第3B圖所示,透過蝕刻電漿302蝕刻工件114。在一些實施例中,透過使蝕刻氣體304流入加工腔室102中,且施加射頻訊號以激發蝕刻電漿302,來形成蝕刻電漿302。舉例而言,可開啟加工氣體入口端122的閥,並允許蝕刻氣體304流入加工腔室102中。在蝕刻氣體304已流入加工腔室102中之後,第一射頻功率產生器127的開關元件204會關閉第一射頻功率產生器127的射頻訊號產生器202與射頻天線121之間的電路。在一些實施例中,第一射頻功率產生器127在約200W至約3000W的功率範圍內操作,並產生頻率介於約13.56MHz至約60MHz之間的射頻訊號。在一些實施例中,第二射頻功率產生器132的開關元件204也進行切換,使得第二射頻功率產生器132的射頻訊號產生器202連接至下方電極108。在一些實施例 中,第二射頻功率產生器132在約200W至約3000W的功率範圍內操作,並產生頻率介於約400kHz至約13.56MHz之間的射頻訊號。因此,由射頻天線121及下方電極108輸出的射頻訊號形成蝕刻電漿302,進而蝕刻工件114。 As shown in FIG. 3B, the
在一些實施例中,蝕刻電漿302會蝕刻掉部分金屬層118。當蝕刻電漿302蝕刻掉部分金屬層118時,產生大量的副產物310,並累積在加工腔室側壁104/106上。在一些實施例中,副產物310可以是非揮發性的副產物,例如:銅、銀、金或一些其他非揮發性的副產物。因此,當繼續蝕刻工件114(或後續的工件)時,蝕刻電漿302會破壞位於加工腔室側壁104/106上之非揮發性副產物310的部分鍵結,造成微量的非揮發性副產物從側壁剝落。因此,微量的非揮發性副產物310可能會累積在設置於加工腔室102內的工件114上成為污染物,可能會導致形成有缺陷的工件。 In some embodiments, the
如第3C圖所示,已從加工腔室102移出工件114,且降低加工腔室102的壓力,以準備從加工腔室側壁104/106移除非揮發性的副產物310。在一些實施例中,因為工件114已從加工腔室102移出,且此清潔製程並非濕式清潔製程,故從加工腔室側壁104/106移除非揮發性副產物310的清潔製程被稱作無晶圓自動清潔(WAC)製程。在一些實施例中,加工腔室102的壓力降至約40毫托(mT)至約80mT的範圍內。在另一些實施例中,加熱元件(圖未示)加熱加工腔室102內部至約20℃至約80℃的範圍內。 As shown in FIG. 3C, the
在一些實施例中,在清潔製程之降低壓力階段的 期間,第一射頻功率產生器127的開關元件204會開啟第一射頻功率產生器127的射頻訊號產生器202與射頻天線121之間的電路。另外,第二射頻功率產生器132的開關元件204會進行切換,以將下方電極108接地。此外,第一側壁電壓產生器134及第二側壁電壓產生器138的開關元件204分別將第一側壁電極136及第二側壁電極140接地。 In some embodiments, during the pressure reduction stage of the cleaning process, the switching
如第3D圖所示,從第二加工腔室側壁106移除位於第二加工腔室側壁106上的非揮發性副產物310。在一些實施例中,透過使加工氣體126流入加工腔室102中,並經由射頻訊號激發電漿,以在加工腔室102內形成清潔電漿216。在一些實施例中,加工氣體126可包含例如氧、氯、硼、氮、氫或前述的組合。舉例而言,可開啟加工氣體入口端122的閥,並允許加工氣體126流入加工腔室102中。在加工氣體126已流入加工腔室102中之後,第一射頻功率產生器127的開關元件204會關閉第一射頻功率產生器127的射頻訊號產生器202與射頻天線121之間的電路,以使射頻天線121輸出射頻訊號。 As shown in FIG. 3D, the non-volatile by-
與第3B圖所示的蝕刻製程期間不同,第二射頻功率產生器132的開關元件204將下方電極108接地,以在清潔製程期間保護靜電吸盤110。另外,第二側壁電壓產生器138的開關元件204進行切換,使得第二側壁電極140連接至第二側壁電壓產生器138的直流電偏壓產生器206。在一些實施例中,第二側壁電極140可連接至直流電偏壓產生器206介於約400秒至約600秒的時間週期。在其他實施例中,第二側壁電極140可連接至直流電偏壓產生器206的時間週期介於約200秒至約400秒。 透過將第二側壁電極140連接至第二側壁電壓產生器138的直流電偏壓產生器206,清潔電漿216與第二側壁電極140之間的電位差促使對非揮發性副產物310的物理轟擊(例如離子轟擊),因而有效地移除位於第二加工腔室側壁106上的非揮發性副產物310。 Unlike the etching process shown in FIG. 3B, the switching
如第3E圖所示,在已有效地轟擊非揮發性副產物310以移除位於第二加工腔室側壁106上的非揮發性副產物310之後,經由加工腔室氣體出口端124將加工氣體126及非揮發性副產物310排出加工腔室102外。在一些實施例中,在排出加工氣體126及非揮發性副產物310的期間,第一射頻功率產生器127的開關元件204切斷射頻天線121與第一射頻功率產生器127的射頻訊號產生器202之間的連結。另外,第二側壁電壓產生器138的開關元件204進行切換,以將第二側壁電極140接地。在一些實施例中,在已排出加工氣體126之後,加工腔室氣體出口端124的閥保持開啟,以為了後續的製程降低加工腔室102的壓力。 As shown in FIG. 3E, after the non-volatile by-
如第3F圖所示,從第一加工腔室側壁104移除位於第一加工腔室側壁104上的非揮發性副產物310。在一些實施例中,透過使加工氣體126流入加工腔室102中,並藉由射頻訊號激發電漿,以在加工腔室102內形成清潔電漿216。在一些實施例中,加工氣體126可包含例如氧、氯、硼、氮、氫或前述的組合。舉例而言,可開啟加工氣體入口端122的閥,並允許加工氣體126流入加工腔室102中。在加工氣體126已流入加工腔室102中之後,第一射頻功率產生器127的開關元件204會關閉 第一射頻功率產生器127的射頻訊號產生器202與射頻天線121之間的電路。 As shown in FIG. 3F, the non-volatile by-
與第3B圖所示的蝕刻製程期間不同,第二射頻功率產生器132的開關元件204將下方電極108接地,以在清潔製程期間保護靜電吸盤110。另外,對第一側壁電壓產生器134的開關元件204進行切換,使第一側壁電極136連接至第一側壁電壓產生器134的直流電偏壓產生器206。在一些實施例中,第一側壁電極136可連接至直流電偏壓產生器206的時間週期介於約400秒至約600秒。在其他實施例中,第一側壁電極136可連接至直流電偏壓產生器206的時間週期介於約200秒至約400秒。透過將第一側壁電極136連接至第一側壁電壓產生器134的直流電偏壓產生器206,清潔電漿216與第一側壁電極136之間的電位差促使對非揮發性副產物310的物理轟擊(例如離子轟擊),因而有效地移除位於第一加工腔室側壁104上的非揮發性副產物310。 Unlike the etching process shown in FIG. 3B, the switching
如第3G圖所示,在已有效地轟擊非揮發性副產物310以移除位於第一加工腔室側壁104上的非揮發性副產物310之後,經由加工腔室氣體出口端124將加工氣體126及非揮發性副產物310排出加工腔室102外。在一些實施例中,在排出加工氣體126及非揮發性副產物310的期間,第一射頻功率產生器127的開關元件204切斷射頻天線121與第一射頻功率產生器127的射頻訊號產生器202之間的連結。另外,對第一側壁電壓產生器134的開關元件204進行切換,以將第一側壁電極136接地。在一些實施例中,在已排出加工氣體126之後,加工腔室 氣體出口端124的閥保持開啟,以為了後續的製程而降低加工腔室102的壓力。 As shown in FIG. 3G, after the non-volatile by-
請參照第4A-4B圖,其提供用以移除累積在加工腔室側壁上的副產物的方法之另外一些實施例的一系列圖式。 Please refer to FIGS. 4A-4B, which provide a series of diagrams of other embodiments of the method for removing the by-products accumulated on the side wall of the processing chamber.
如第4A圖所示,半導體加工系統100包含功率開關分歧管402。在一些實施例中,功率開關分歧管402包含第二射頻功率產生器132、第一側壁電壓產生器134及第二側壁電壓產生器138,並控制各自的開關元件204。在另一些實施例中,功率開關分歧管402包含複數個開關,用以在第一電位節點、第二電位節點及/或射頻訊號產生器節點之間切換,進而使得功率開關分歧管控制下方電極108、靜電吸盤110、第一側壁電極136及第二側壁電極140的節點連接。在一些實施例中,第二電位的值大於第一電位的值。舉例而言,第一電位為約0V,而第二電位為約負600V。 As shown in FIG. 4A, the
如第4A圖更進一步所示,從第一加工腔室側壁104移除形成於第一加工腔室側壁104上的非揮發性副產物310,同時從第二加工腔室側壁106移除位於第二加工腔室側壁106上的非揮發性副產物310。與第3D及3F圖所示的清潔製程相似的是:功率開關分歧管402切換第二射頻功率產生器132的開關元件204,將下方電極108接地,以在清潔製程期間保護靜電吸盤110。然而,與第3D及3F圖所示的清潔製程不同的是:功率開關分歧管402切換第一側壁電壓產生器134及第二側壁電壓產生器138的開關元件204,將第一側壁電壓產生器134及第二側壁電壓產生器138連接至各自的直流電偏壓產生器206。因此, 在一些實施例中,透過促使對非揮發性副產物310的物理轟擊(例如離子轟擊),可同時有效地移除位於第一加工腔室側壁104及第二加工腔室側壁106上的非揮發性副產物310。 As further shown in FIG. 4A, the non-volatile by-
如第4B圖所示,在已有效地轟擊非揮發性副產物310以移除位於第一加工腔室側壁104及第二加工腔室側壁106上的非揮發性副產物310之後,經由加工腔室氣體出口端124將加工氣體126及非揮發性副產物310排出加工腔室102外。在一些實施例中,在排出加工氣體126及非揮發性副產物310的期間,功率開關分歧管402切換第一射頻功率產生器127的開關元件204,以切斷射頻天線121與第一射頻功率產生器127的射頻訊號產生器202之間的連結。另外,功率開關分歧管402將第一側壁電壓產生器134及第二側壁電壓產生器138的開關元件204由各自的第一端子切換各自的第二端子,其將第一側壁電極136及第二側壁電極140二者皆接地。 As shown in FIG. 4B, after the non-volatile by-
請參照第5圖,提供用以移除累積在加工腔室側壁上的副產物的方法之一些實施例的流程圖500。然而本揭露所揭示的方法或其他繪示及/或說明的方法可在本揭露中繪示及/或說明為一系列動作或事件。應理解的是,此動作或事件所繪示的順序不應以限制性的意義來解讀。舉例而言,部分動作可能與本揭露所繪示及/或說明的動作或事件以不同的順序及/或同時進行。另外,並不需要所有繪示的動作來實施本揭露之一或多個方面或實施例,且本揭露之一或多個動作可以一或多個分開的動作及/或階段來進行。 Please refer to FIG. 5, which provides a flowchart 500 of some embodiments of a method for removing by-products accumulated on the side wall of the processing chamber. However, the method disclosed in the present disclosure or other methods shown and/or described may be illustrated and/or described in the present disclosure as a series of actions or events. It should be understood that the sequence of the actions or events should not be interpreted in a restrictive sense. For example, some actions may be performed in a different order and/or at the same time as the actions or events illustrated and/or described in this disclosure. In addition, not all the illustrated actions are required to implement one or more aspects or embodiments of the present disclosure, and one or more actions of the present disclosure may be performed in one or more separate actions and/or stages.
在操作502,降低設置有工件的加工腔室的壓力。 操作502的範例可參考先前繪示的第3A圖。 In
在操作504,對設置於加工腔室內的工件進行加工,此加工可能會導致副產物累積在加工腔室的側壁上。操作504的範例可參考先前繪示的第3B圖。 In
在操作506,從加工腔室移出加工後的工件。操作506的範例可參考先前繪示的第3C圖。 In
在操作508,降低加工腔室的壓力。操作508的範例可參考先前繪示的第3C圖。 At
在操作510,透過施加射頻(RF)訊號至射頻天線,在加工腔室內由加工氣體產生清潔電漿。操作510的範例可參考先前繪示的第3D圖。 In
在操作512,下方電極係連接至第一電位。操作512的範例可參考先前繪示的第3D圖。 In
在操作514,對側壁電極施加具有第二電位的偏壓,其中第二電位的值大於第一電位的值,以促使對位於加工腔室側壁上的副產物的離子轟擊。操作514的範例可參考先前繪示的第3D圖。 In
在操作516,從加工腔室排出加工氣體及副產物。操作516的範例可參考先前繪示的第3E圖。 At
因此,由上述內容可理解的是,本發明實施例係有關於一種改良的方法(及相關裝置),用以移除累積於半導體加工腔室側壁上的副產物。 Therefore, it can be understood from the above content that the embodiment of the present invention relates to an improved method (and related device) for removing by-products accumulated on the sidewall of the semiconductor processing chamber.
因此,在一些實施例中,本發明實施例提供一種加工腔室的清潔方法。此方法包含將加工氣體引入加工腔室中, 其中加工腔室具有沿加工腔室的側壁的副產物。利用射頻(RF)訊號由加工氣體產生電漿。將設置於加工腔室側壁內的下方電極連接至第一電位。同時,對側壁電極施加具有第二電位的偏壓,以促使對副產物的離子轟擊,其中第二電位的值大於第一電位的值。從加工腔室排出加工氣體。在一些實施例中,此方法更包含利用蝕刻電漿蝕刻工件,其中透過蝕刻電漿使得從工件剝落的材料附著至加工腔室的側壁,形成副產物。在將加工氣體引入加工腔室中之前,從加工腔室移出工件。在一些實施例中,加工氣體包含氯或氧。在一些實施例中,第一電位大致上等同於接地,且第二電位係介於約0V至約負600V之間。在一些實施例中,副產物包含惰性金屬。在一些實施例中,對側壁電極施加偏壓約200秒至約600秒。 Therefore, in some embodiments, embodiments of the present invention provide a method for cleaning a processing chamber. This method includes introducing a process gas into a process chamber, wherein the process chamber has by-products along the side walls of the process chamber. Using radio frequency (RF) signals to generate plasma from the process gas. The lower electrode arranged in the side wall of the processing chamber is connected to the first potential. At the same time, a bias voltage with a second potential is applied to the sidewall electrodes to promote ion bombardment of the by-products, wherein the value of the second potential is greater than the value of the first potential. The processing gas is discharged from the processing chamber. In some embodiments, the method further includes etching the workpiece using etching plasma, wherein the material peeled off from the workpiece adheres to the sidewall of the processing chamber through the etching plasma to form by-products. Before introducing the processing gas into the processing chamber, the workpiece is removed from the processing chamber. In some embodiments, the process gas contains chlorine or oxygen. In some embodiments, the first potential is substantially equivalent to ground, and the second potential is between about 0V and about minus 600V. In some embodiments, the by-products include inert metals. In some embodiments, the sidewall electrodes are biased for about 200 seconds to about 600 seconds.
在其他實施例中,本發明實施例提供一種電漿加工裝置,包含:加工腔室、第一射頻功率產生器、側壁電壓產生器以及第二射頻功率產生器。加工腔室包含下方電極,其中下方電極排列於靜電吸盤的上表面下方,且位於加工腔室的側壁之間,靜電吸盤是配置用於接收工件。第一射頻功率產生器電性連接至射頻天線。側壁電壓產生器電性連接至側壁電極。第二射頻功率產生器電性連接至下方電極。在一些實施例中,側壁電極為加工腔室的側壁。在一些實施例中,側壁電壓產生器施加直流電偏壓至側壁電極,以促使對位於加工腔室側壁上的非揮發性副產物的離子轟擊。在一些實施例中,側壁電壓產生器包括一開關元件,開關元件具有連接至一第一電位的一第一端子,以及連接至一電壓產生器的一第二端子。在一些實施 例中,側壁電極係藉由加工腔室的側壁與靜電吸盤分隔。在一些實施例中,第二射頻功率產生器包含開關元件,開關元件具有連接至第一電位的第一端子,以及連接至射頻訊號產生器的第二端子。 In other embodiments, an embodiment of the present invention provides a plasma processing apparatus, including: a processing chamber, a first radio frequency power generator, a sidewall voltage generator, and a second radio frequency power generator. The processing chamber includes a lower electrode, wherein the lower electrode is arranged below the upper surface of the electrostatic chuck and is located between the side walls of the processing chamber. The electrostatic chuck is configured to receive a workpiece. The first radio frequency power generator is electrically connected to the radio frequency antenna. The sidewall voltage generator is electrically connected to the sidewall electrode. The second radio frequency power generator is electrically connected to the lower electrode. In some embodiments, the sidewall electrode is the sidewall of the processing chamber. In some embodiments, the sidewall voltage generator applies a direct current bias to the sidewall electrodes to promote ion bombardment of non-volatile byproducts located on the sidewalls of the processing chamber. In some embodiments, the sidewall voltage generator includes a switching element having a first terminal connected to a first potential, and a second terminal connected to a voltage generator. In some embodiments, the sidewall electrodes are separated from the electrostatic chuck by the sidewall of the processing chamber. In some embodiments, the second radio frequency power generator includes a switching element, the switching element has a first terminal connected to the first potential, and a second terminal connected to the radio frequency signal generator.
在另一些實施例中,本發明實施例提供一種加工腔室的清潔方法,包含:將側壁電壓產生器的開關元件連接至第一電位,以將側壁電極連接至第一電位,將第二射頻功率產生器的開關元件連接至第二電位,以將下方電極連接至第二電位,對基板進行加工,其中基板包含位於加工腔室內的第一材料,此加工會產生副產物,副產物包含第一材料,並附著至加工腔室的側壁,從加工腔室移出加工後的基板,將加工氣體引入加工腔室,將第二射頻功率產生器的開關元件切換至第一電位,且同時將側壁電壓產生器的開關元件切換至第三電位,藉由將第一射頻功率產生器連接至射頻天線,在加工腔室內產生清潔電漿,以及從加工腔室排出加工氣體及副產物。在一實施例中,將側壁電壓產生器的開關元件連接至第三電位促使清潔電漿的離子轟擊副產物。在一實施例中,在從加工腔室移出加工後的基板之後,引入加工氣體。在一實施例中,第二電位的值及第三電位的值皆分別大於第一電位的值。在一實施例中,第一電位大致上等同於接地,第二電位係介於約0V至約負600V之間,且第三電位係介於約0V至約負600V之間。在一實施例中,第一材料包含惰性金屬。在一實施例中,將側壁電壓產生器的開關元件連接至第三電位約200秒至約600秒,使得加工氣體能夠使副產物從加工腔室的側壁上剝落。在一實施例中, 側壁電極連續地圍繞加工腔室的周長延伸。 In other embodiments, embodiments of the present invention provide a method for cleaning a processing chamber, including: connecting a switching element of a sidewall voltage generator to a first potential, so as to connect the sidewall electrodes to the first potential, and connecting the second radio frequency The switching element of the power generator is connected to the second potential to connect the lower electrode to the second potential to process the substrate. The substrate contains the first material in the processing chamber. This processing will produce by-products. The by-products include the first material. A material attached to the side wall of the processing chamber, remove the processed substrate from the processing chamber, introduce processing gas into the processing chamber, switch the switching element of the second RF power generator to the first potential, and simultaneously switch the side wall The switching element of the voltage generator is switched to the third potential, and by connecting the first radio frequency power generator to the radio frequency antenna, a clean plasma is generated in the processing chamber, and processing gas and by-products are discharged from the processing chamber. In one embodiment, connecting the switching element of the sidewall voltage generator to the third potential promotes ion bombardment by-products of the cleaning plasma. In one embodiment, after removing the processed substrate from the processing chamber, the processing gas is introduced. In an embodiment, the value of the second potential and the value of the third potential are respectively greater than the value of the first potential. In one embodiment, the first potential is substantially equivalent to ground, the second potential is between about 0V and about negative 600V, and the third potential is between about 0V and about negative 600V. In one embodiment, the first material includes an inert metal. In one embodiment, the switching element of the side wall voltage generator is connected to the third potential for about 200 seconds to about 600 seconds, so that the processing gas can peel off the by-products from the side walls of the processing chamber. In an embodiment, the sidewall electrode continuously extends around the circumference of the processing chamber.
以上概述了許多實施例的部件,使本發明所屬技術領域中具有通常知識者可以更加理解本發明實施例的各方面。本發明所屬技術領域中具有通常知識者應可理解,可輕易地以本發明實施例為基礎來設計或改變其他製程及結構,以實現與在此介紹的實施例相同的目的及/或達到與在此介紹的實施例相同的優點。本發明所屬技術領域中具有通常知識者也應了解,這些相等的結構並未背離本發明的精神與範圍。在不背離本發明的精神與範圍之前提下,可對本發明實施例進行各種改變、置換及變動。 The components of many embodiments are summarized above, so that those with ordinary knowledge in the technical field of the present invention can better understand various aspects of the embodiments of the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains should understand that they can easily design or change other manufacturing processes and structures based on the embodiments of the present invention to achieve the same purpose and/or as those of the embodiments described herein. The embodiments described here have the same advantages. Those with ordinary knowledge in the technical field to which the present invention belongs should also understand that these equivalent structures do not depart from the spirit and scope of the present invention. Without departing from the spirit and scope of the present invention, various changes, substitutions and alterations can be made to the embodiments of the present invention.
500‧‧‧流程圖 500‧‧‧Flowchart
502、504、506、508、510、512、514、516‧‧‧操作 502, 504, 506, 508, 510, 512, 514, 516‧‧‧Operation
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