CN107083544A - The processing method and processing unit of a kind of inspection substrate - Google Patents
The processing method and processing unit of a kind of inspection substrate Download PDFInfo
- Publication number
- CN107083544A CN107083544A CN201710262131.0A CN201710262131A CN107083544A CN 107083544 A CN107083544 A CN 107083544A CN 201710262131 A CN201710262131 A CN 201710262131A CN 107083544 A CN107083544 A CN 107083544A
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- China
- Prior art keywords
- film layer
- inspection substrate
- inspection
- sacrifice
- sacrifice film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Abstract
The present invention provides a kind of processing method and processing unit of inspection substrate.Processing method includes：Set on inspection substrate and sacrifice film layer；Formed using plasma enhanced chemical vapor deposition method in the sacrifice film layer and examine film layer；After being tested to the formation situation of the inspection film layer, the sacrifice film layer is removed from the inspection substrate, so that the inspection film layer is separated with the inspection substrate；Reclaim the inspection substrate.The solution of the present invention first deposits the sacrifice film layer for being easy to separate with inspection substrate on inspection substrate, gas ions enhancing chemical vapour deposition technique is reused afterwards produces inspection film layer for examining chemical meteorology deposition technique, after the completion of checking, only need to separate sacrifice film layer with inspection substrate, clean inspection substrate can be reclaimed again, inspection substrate is continuing with being examined in next time, so that cost of manufacture has been saved, therefore with very high practical value.
Description
Technical field
The present invention relates to the making field of display product, the processing method and processing dress of a kind of inspection substrate are particularly related to
Put.
Background technology
Existing display base plate manufacture craft typically makes nonmetallic exhausted using chemical vapour deposition technique on underlay substrate
Edge film.Carried out in chemical vapor depsotition equipment before typical products in mass production makes, it is necessary to according to the chemical meteorology deposition condition of product,
Trial-production work is carried out on inspection substrate, has without exception with gas-condition, mechanical action, technological parameter etc. in assessment equipment, it is ensured that
The stability of product during volume production.
At present, chemical vapor deposition uses radio-frequency power supply, so metal and other materials can cause Arcing (abnormal
Electric discharge phenomena), Arcing influences the cleanliness factor in power supply and chamber, therefore current inspection substrate and the material of product substrate are only
Glass can be selected.
After the completion of testing stage, deposition has the glass substrate of non-metallic insulation film, it is impossible to used in being examined in next time,
The problem of causing not recoverable.
The content of the invention
Present invention aim to address glass substrate carry out chemical meteorology deposition test after expendable problem.
To achieve the above object, on the one hand, embodiments of the invention provide a kind of processing method of inspection substrate, including：
Set on inspection substrate and sacrifice film layer；
Formed using plasma enhanced chemical vapor deposition method in the sacrifice film layer and examine film layer；
After being tested to the formation situation of the inspection film layer, the expendable film is removed from the inspection substrate
Layer, so that the inspection film layer is separated with the inspection substrate；
Reclaim the inspection substrate.
Wherein, the sacrifice film layer is nonmetallic materials and the liquid that can be etched is etched；
The sacrifice film layer is removed from inspection substrate, including：
Using the etching liquid of the sacrifice film layer, the sacrifice film layer is etched away.
Wherein, set on inspection substrate and sacrifice film layer, including：
Film layer will be sacrificed to be fitted on the inspection substrate；
The sacrifice film layer is removed from inspection substrate, including：
Using mechanically decoupled mode, the sacrifice film layer is separated with the inspection substrate.
Wherein, film layer will be sacrificed to be fitted on the inspection substrate, including：
The second surface of the first surface and the inspection substrate of sacrificing film layer is subjected to amination processing respectively, made described
First surface and second surface attachment amino；
The first surface of the sacrifice film layer is fitted with the second surface of the inspection substrate.
Wherein, set on inspection substrate before sacrificing film layer, methods described also includes：
The inspection substrate is cleaned.Wherein, remove after the sacrifice film layer, reclaim from the inspection substrate
Before the inspection substrate, methods described also includes：
Plasma irradiating is carried out to the inspection substrate, to remove the residue on the inspection substrate.
On the other hand, embodiments of the invention also provide a kind of processing equipment of inspection substrate, including：
Setup module, film layer is sacrificed for being set on inspection substrate；
Deposition module, film is examined for being formed using plasma enhanced chemical vapor deposition method in the sacrifice film layer
Layer；
Module is removed, for after being tested to the formation situation of the inspection film layer, getting on from the inspection substrate
Except the sacrifice film layer, so that the inspection film layer is separated with the inspection substrate；
Recycling module, for reclaiming the inspection substrate.
Wherein, the sacrifice film layer is nonmetallic materials and the liquid that can be etched is etched；
The removal module includes：
First removes submodule, for the etching liquid using the sacrifice film layer, etches away the sacrifice film layer.
Wherein, the setup module is specifically for will sacrifice film layer and be fitted on the inspection substrate；
The removal module includes：
Second removes submodule, for using mechanically decoupled mode, and the sacrifice film layer and the inspection substrate are carried out
Separation.
Wherein, the setup module includes：
Amination submodule, the second surface for first surface and the inspection substrate by film layer is sacrificed is carried out respectively
Amination processing, makes the first surface and the second surface adhere to amino；
Laminating submodule, for the first surface of the sacrifice film layer to be fitted with the second surface of the inspection substrate.
The such scheme of the present invention has the advantages that：
The solution of the present invention first deposits the sacrifice film layer for being easy to separate with inspection substrate on inspection substrate, makes again afterwards
The inspection film layer for examining chemical meteorology deposition technique is produced with gas ions enhancing chemical vapour deposition technique, is completed in checking
Afterwards, it is only necessary to film layer will be sacrificed and separated with inspection substrate, you can clean inspection substrate is reclaimed again so that inspection substrate can be with
It is continuing with being examined in next time, so that cost of manufacture has been saved, therefore with very high practical value.
Brief description of the drawings
Fig. 1 is the step schematic diagram of the processing method of the inspection substrate of the present invention；
Fig. 2A-Fig. 2 E are the detail flowchart of the processing method of the inspection substrate of the present invention in actual applications；
Fig. 3 is inspection substrate of the invention and sacrifices the schematic diagram fitted between film layer by amino；
Fig. 4 is the structural representation of the processing unit of the inspection substrate of the present invention.
Embodiment
To make the technical problem to be solved in the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing and tool
Body embodiment is described in detail.
For glass substrate after chemical meteorology deposition test expendable problem, the present invention provides a kind of solution party
Case.
On the one hand, embodiments of the invention provide a kind of processing method of inspection substrate, as shown in figure 1, including：
Step 11, set on inspection substrate and sacrifice film layer；
Step 12, formed using plasma enhanced chemical vapor deposition method on film layer is sacrificed and examine film layer；
Step 13, after the formation situation to examining film layer is tested, the sacrifice film layer is removed from inspection substrate,
So that examining film layer to be separated with inspection substrate；
Step 14, inspection substrate is reclaimed.
The processing method of the present embodiment first deposits the sacrifice film layer for being easy to separate with inspection substrate on inspection substrate, it
Gas ions enhancing chemical vapour deposition technique is reused afterwards and produces inspection film layer for examining chemical meteorology deposition technique, is being tested
After the completion of card, it is only necessary to film layer will be sacrificed and separated with inspection substrate, you can clean inspection substrate is reclaimed again so that examine base
Plate is continuing with being examined in next time, so that cost of manufacture has been saved, therefore with very high practical value.
The processing method of the present embodiment is described in detail to being implemented in combination with mode below.
Implementation one
The processing method of this implementation one includes：
Step 21, as shown in Figure 2 A, inspection substrate 1 is cleaned, to remove the foreign matter on inspection substrate；
In this step, cleaning way is not unique, is also not limited to only cleaning once, is introduced as exemplary, can be with
The surface of inspection substrate 1 is cleaned using deionized water, to reach the purpose for removing foreign matter；For another example can also use
Plasma (plasma technology) is irradiated to inspection substrate, removes the organic residue on inspection substrate；
Step 22, as shown in Figure 2 B, nonmetallic materials are deposited on inspection substrate, film layer 2 is sacrificed to be formed；Need to give
Illustrate, the nonmetallic materials are to sacrifice the preferred but nonessential material of film layer 2, and its advantage is can be in chemical vapor deposition
During avoid the occurrence of the phenomenon of arcing；
Introduced as exemplary, in actual applications, this implementation one can use organic matter as sacrifice film layer 2
Material, organic matter is not only easy to by solution etches, and can also be decomposed under Plasma irradiations, is adapted to follow-up clear using Plasma
Wash inspection substrate；
Step 23, as shown in Figure 2 C, formed and examined on film layer 2 is sacrificed using plasma enhanced chemical vapor deposition method
Film layer 3；
In this step, the inspection substrate 1 for being formed with sacrifice film layer 2 can be placed on special chemical vapor deposition chamber
Interior, and normally make inspection film layer 3 according to conventional products technique；
Wherein, the inspection film layer 3 is used to verify whether chemical vapor deposition method reaches product requirement；If forming situation
There is exception, then need to be improved process conditions, chemical vapor depsotition equipment etc., finally ensure to produce during volume production
Satisfactory product, to improve yields；
Step 24, as shown in Figure 2 D, after the formation situation to examining film layer 3 is tested, using the quarter for sacrificing film layer 3
Liquid is lost, sacrifice film layer 3 is etched away；
In this step, the etching liquid for sacrificing film layer 3 is only performed etching to sacrificing film layer 3, therefore after the completion of etching, can
The inspection film layer 3 and inspection substrate 1 separated, the inspection film layer 3 is material used on product, can subsequently be refined
And reclaim, it is to avoid cause the unnecessary wasting of resources；
Step 25, as shown in Figure 2 E, Plasma irradiations are carried out to inspection substrate 1, to remove the residual on inspection substrate 1
Thing, the residue includes sacrificing the remaining part after etching of film layer 2；
After the completion of this step, finally inspection substrate 1 is reclaimed, so that next time is used.
Obviously, the processing method of this implementation one, can not only reclaim inspection substrate 1, moreover it is possible to examining film layer 3 to carry out
Refine, to reclaim the material for examining film layer 3, so as to reduce unnecessary waste, reach cost-effective purpose.
Implementation two
Compared with implementation one, present embodiment two is that the sacrifice film layer that will have been formed is fitted on inspection substrate
Directly used, so as to realize convenient chemical vapor deposition, after examining film layer formation to complete and carrying out related check, directly
Using mechanically decoupled mode, film layer will be sacrificed and separated with inspection substrate, should not performed etching again to sacrificing film layer.
In actual applications, embodiment two can be by the first surface and the second surface point of inspection substrate of sacrificing film layer
Not carry out amination processing, first surface and the second surface is adhered to amino.
The first surface for sacrificing film layer is fitted with the second surface of inspection substrate afterwards, so as to as shown in Figure 3, make
Sacrifice the Hydrogenbond by amino between film layer 2 and inspection substrate 1, it is clear that this mode causes two that hydrogen bond be combined with each other
Amino has saturability and directionality, therefore fits very firm, and its stability disclosure satisfy that the requirement of chemical meteorology deposition,
In addition, sacrifice film layer can also be separated with inspection substrate easily by mechanically decoupled.
It can be seen that, the processing method of this implementation two more can easily reclaim inspection substrate, connect down inspection substrate
To continue to come into operation.Certainly, it can also subsequently be performed etching again using etching liquid to sacrificing film layer, so as to obtain examining film
Layer, and to examining film layer to carry out refinement recovery.
Explanation is needed exist for, mechanical separation device can be traditional dyestripping equipment, due to being prior art, herein
No longer it is described in detail.Fitted in addition, this implementation two is also not limited to sacrifice film layer with examining using amino, be used as it
He fits scheme, can also use carboxyl laminating or be fitted using vacuum suction mode.
On the other hand, another embodiment of the present invention also provides a kind of processing equipment of inspection substrate, face as shown in Figure 4,
Including：
Setup module, film layer is sacrificed for being set on inspection substrate；
Deposition module, film layer is examined for being formed using plasma enhanced chemical vapor deposition method on film layer is sacrificed；
Module is removed, for after the formation situation to examining film layer is tested, expendable film to be removed from inspection substrate
Layer, so that examining film layer to be separated with inspection substrate；
Recycling module, for reclaiming inspection substrate.
Obviously, the processing equipment of the present embodiment is corresponding with the above-mentioned processing method that the present invention is provided, therefore, it is possible to realize
Identical technique effect.
Specifically, the processing unit of the present embodiment can also be reclaimed to inspection film layer, i.e. the sacrifice film layer of the present embodiment
For nonmetallic materials and the liquid that can be etched etching；
Above-mentioned removal module includes：
First removes submodule, for using the etching liquid for sacrificing film layer, etching away sacrifice film layer.
Wherein, the etching liquid can only etch away sacrifice film layer, therefore be eventually inspection substrate and inspection after the completion of etching
Film layer is tested to be kept completely separate, subsequently can be to examining film layer to carry out bringing up again refining, to reach purpose that material economy is used.
In addition, the processing equipment of the present embodiment can also quickly set sacrifice film layer, and film layer and inspection substrate will be sacrificed
Separation.
I.e. the setup module of the present embodiment can will sacrifice film layer and be fitted on the inspection substrate, specifically include：
Amination submodule, for the second surface of the first surface and inspection substrate of sacrificing film layer to be carried out into amino respectively
Change is handled, and first surface and second surface is adhered to amino；
Laminating submodule, for the first surface for sacrificing film layer to be fitted with the second surface of inspection substrate.
Correspondingly, removing module includes：
Second removes submodule, for using mechanically decoupled mode, will sacrifice film layer and is separated with inspection substrate.
Obviously, such scheme can be in inspection substrate in use, being that note is torn by film layer is sacrificed, with higher convenient
Property.
Described above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, on the premise of principle of the present invention is not departed from, some improvements and modifications can also be made, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of processing method of inspection substrate, it is characterised in that including：
Set on inspection substrate and sacrifice film layer；
Formed using plasma enhanced chemical vapor deposition method in the sacrifice film layer and examine film layer；
After being tested to the formation situation of the inspection film layer, the sacrifice film layer is removed from the inspection substrate, from
And the inspection film layer is separated with the inspection substrate；
Reclaim the inspection substrate.
2. processing method according to claim 1, it is characterised in that
The sacrifice film layer is nonmetallic materials and the liquid that can be etched is etched；
The sacrifice film layer is removed from inspection substrate, including：
Using the etching liquid of the sacrifice film layer, the sacrifice film layer is etched away.
3. processing method according to claim 1, it is characterised in that
Set on inspection substrate and sacrifice film layer, including：
Film layer will be sacrificed to be fitted on the inspection substrate；
The sacrifice film layer is removed from inspection substrate, including：
Using mechanically decoupled mode, the sacrifice film layer is separated with the inspection substrate.
4. processing method according to claim 1, it is characterised in that
Film layer will be sacrificed to be fitted on the inspection substrate, including：
The second surface of the first surface and the inspection substrate of sacrificing film layer is subjected to amination processing respectively, makes described first
Surface and second surface attachment amino；
The first surface of the sacrifice film layer is fitted with the second surface of the inspection substrate.
5. processing method according to claim 1, it is characterised in that
Set on inspection substrate before sacrificing film layer, methods described also includes：
The inspection substrate is cleaned.
6. processing method according to claim 1, it is characterised in that
Remove after the sacrifice film layer, reclaim before the inspection substrate, methods described also includes from the inspection substrate：
Plasma irradiating is carried out to the inspection substrate, to remove the residue on the inspection substrate.
7. a kind of processing equipment of inspection substrate, it is characterised in that including：
Setup module, film layer is sacrificed for being set on inspection substrate；
Deposition module, film layer is examined for being formed using plasma enhanced chemical vapor deposition method in the sacrifice film layer；
Module is removed, for after being tested to the formation situation of the inspection film layer, institute to be removed from the inspection substrate
Sacrifice film layer is stated, so that the inspection film layer is separated with the inspection substrate；
Recycling module, for reclaiming the inspection substrate.
8. processing equipment according to claim 7, it is characterised in that
The sacrifice film layer is nonmetallic materials and the liquid that can be etched is etched；
The removal module includes：
First removes submodule, for the etching liquid using the sacrifice film layer, etches away the sacrifice film layer.
9. processing equipment according to claim 7, it is characterised in that
The setup module is specifically for will sacrifice film layer and be fitted on the inspection substrate；
The removal module includes：
Second removes submodule, for using mechanically decoupled mode, and the sacrifice film layer is separated with the inspection substrate.
10. processing equipment according to claim 7, it is characterised in that
The setup module includes：
Amination submodule, for the second surface of the first surface and the inspection substrate of sacrificing film layer to be carried out into amino respectively
Change is handled, and the first surface and the second surface is adhered to amino；
Laminating submodule, for the first surface of the sacrifice film layer to be fitted with the second surface of the inspection substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710262131.0A CN107083544B (en) | 2017-04-20 | 2017-04-20 | A kind of processing method and processing unit of inspection substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710262131.0A CN107083544B (en) | 2017-04-20 | 2017-04-20 | A kind of processing method and processing unit of inspection substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107083544A true CN107083544A (en) | 2017-08-22 |
| CN107083544B CN107083544B (en) | 2019-07-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710262131.0A Expired - Fee Related CN107083544B (en) | 2017-04-20 | 2017-04-20 | A kind of processing method and processing unit of inspection substrate |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011053076A (en) * | 2009-09-01 | 2011-03-17 | Japan Electronic Materials Corp | Method of manufacturing probe card |
| CN102157623A (en) * | 2011-03-08 | 2011-08-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Stripping transfer method of substrate of thin film solar cell |
| US20120282713A1 (en) * | 2009-12-25 | 2012-11-08 | Tokyo Electron Limited | Method of manufacturing semiconductor device and system for manufacturing semiconductor device |
-
2017
- 2017-04-20 CN CN201710262131.0A patent/CN107083544B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011053076A (en) * | 2009-09-01 | 2011-03-17 | Japan Electronic Materials Corp | Method of manufacturing probe card |
| US20120282713A1 (en) * | 2009-12-25 | 2012-11-08 | Tokyo Electron Limited | Method of manufacturing semiconductor device and system for manufacturing semiconductor device |
| CN102959678A (en) * | 2009-12-25 | 2013-03-06 | 东京毅力科创株式会社 | Method of manufacturing semiconductor device and system for manufacturing semiconductor device |
| CN102157623A (en) * | 2011-03-08 | 2011-08-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Stripping transfer method of substrate of thin film solar cell |
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| CN107083544B (en) | 2019-07-02 |
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Granted publication date: 20190702 Termination date: 20210420 |