CN104538497A - Thin film solar cell and preparation method thereof - Google Patents
Thin film solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN104538497A CN104538497A CN201410835909.9A CN201410835909A CN104538497A CN 104538497 A CN104538497 A CN 104538497A CN 201410835909 A CN201410835909 A CN 201410835909A CN 104538497 A CN104538497 A CN 104538497A
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- layer
- gaas
- film solar
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- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 78
- 238000000059 patterning Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 118
- 239000011241 protective layer Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000003518 caustics Substances 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 150000007522 mineralic acids Chemical group 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 26
- 238000005516 engineering process Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000013461 design Methods 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 4
- 239000000047 product Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003915 air pollution Methods 0.000 description 1
- 210000001142 back Anatomy 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The preparation method of a thin film solar cell includes the following steps that S1, a sacrificial layer, a GaAs layer and a first electrode layer are formed in sequence on the upper surface of a GaAs substrate; S2, a mask layer is formed on the surface, which is distant from the GaAs layer, of the first electrode layer; S3, patterning is carried out on the first electrode layer and the GaAs layer through an etching process; S4, the mask layer is removed, a supporting layer is formed on the surface, which is distant from the GaAs layer, of the first electrode layer; and S5, the sacrificial layer is removed. On the basis of the epitaxial wafer stripping technology, patterning is first operated on the GaAs layer, then the GaAs layer after patterning is loaded on the supporting layer, and the GaAs layer is stripped. The strength of the GaAs layer during the etching process is enhanced based on a first metal layer and the sacrificial layer, the damage to the GaAs layer during the patterning process is effectively avoided, the product yield is improved, the production cost is reduced, the GaAs layer can be etched into a variety of shapes, and the product design scope and the application scope of the thin film solar cell are expanded.
Description
Technical field
The invention belongs to technical field of semiconductors, be specifically related to solar cell prepared by a kind of preparation method of GaAs thin-film solar cells and the method.
Background technology
Inexhaustible and free of contamination solar energy is the focus that people pay close attention to always, and along with the traditional fuel energy is day by day exhausted, air pollution problems inherent is day by day serious, and how effective is that electric energy becomes study hotspot gradually by light energy conversion.Sunlight, according to photovoltaic effect principle, can be converted into electric energy by solar cell by photovoltaic generation, is the most effective Land use systems of current solar energy.Wherein, being representative with GaAs solar cell, the technical development of III-V solar cell is rapid.
GaAs solar cell is based on GaAs substrate, the unijunction prepared by MOCVD (metal organic chemical vapor deposition) extension or multijunction solar cell.The reduction of and MOCVD device cost increasingly mature along with technology, increasing research institution goes into overdrive to drop into the research and development of GaAs solar cell.After 2010, GaAs solar cell peak efficiency breaks through more frequent, and at present, under non-concentrating condition, single junction cell efficiency can reach 28.8%, and multijunction cell efficiency can reach 38%, far above the solar cell of other material type.The application of GaAs solar cell is progressively expanded, and progressively expands to Ground Application, have very large development space in fields such as portable energy source, automotive electronics, consumer electronics from the application of initial space.
Usually, GaAs thin film solar cell at least comprises the supporting layer, dorsum electrode layer, GaAs layer, Window layer and the grid-type electrode layer that are cascading, and wherein, the part realizing opto-electronic conversion is GaAs layer.In order to obtain GaAs layer of good performance, be typically employed on GaAs substrate and first grow sacrifice layer by epitaxy technique, again by epitaxy technique growth GaAs layer, then sacrifice layer is removed by etching technics, peel off the technique obtaining GaAs film, this technology for the preparation of semiconductive thin film is called as epitaxial wafer and peels off (Epitaxial Lift Off, ELO) technique.
Due to the restriction of existing technique, the wafer that GaAs substrate is normally obtained by the cutting of cylindric monocrystalline, this just makes the GaAs film grown also for circular.In order to effectively reduce the area of photovoltaic module under unit power, improving the Energy transmission in assembly unit are, after usually the GaAs film of circle being cut, carrying out connection in series-parallel again to make assembly.But due to GaAs film very thin (only having 1 μm ~ 10 μm), and be fragile material, very easily broken in the process cut, product yield is very low, and production cost is very high, has a strong impact on the business application of GaAs thin-film solar cells.
Summary of the invention
For this reason, to be solved by this invention is in the production process of GaAs thin-film solar cells, GaAs layer pattern changes into this high problem, thus provides GaAs layer pattern to change into low, a simple thin-film solar cells preparation method of technique, and thin-film solar cells prepared by the method.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A preparation method for thin-film solar cells, comprises the steps:
S1, form sacrifice layer, GaAs layer and the first electrode layer successively at the upper surface of GaAs substrate;
S2, on the surface of the first electrode layer away from GaAs layer, form mask layer;
S3, by etching technics, patterning is carried out to GaAs layer and the first electrode layer;
S4, removing mask layer, the surface of the first electrode layer away from GaAs layer forms supporting layer;
S5, removing sacrifice layer.
The lower surface of described GaAs substrate and the step of side formation protective layer is also included in step S2.
Etching technics described in step S3 is wet etching.
The pattern that step S3 is formed is single figure.
The pattern that step S3 is formed is multiple graphs array.
In described multiple graphs array, the spacing of adjacent pattern is greater than 100 μm.
The step described GaAs layer being formed the second electrode lay is also included in after described step S5.
Described mask layer is inorganic acid resistance caustic corrosion material layer, and thickness is 10 μm ~ 100 μm; Described protective layer is inorganic acid resistance caustic corrosion material layer.
Described sacrifice layer is Al
xga
1-xas layer.
Thin-film solar cells prepared by the preparation method of described thin-film solar cells.
Technique scheme of the present invention has the following advantages compared to existing technology:
1, the invention provides a kind of preparation method of thin-film solar cells, based on epitaxial wafer lift-off technology, first patterning is carried out to GaAs layer, after being loaded to by the GaAs layer after patterning on supporting layer, carry out the stripping of GaAs layer again.With the first metal layer and sacrifice layer for relying on, adding the intensity of GaAs layer in etching process, not only effectively prevent the damage of GaAs layer in patterning process, improve product yield, reduce production cost; And, can be various shape by GaAs layer etching, expand product design scope and the range of application of described thin-film solar cells.
2, the invention provides a kind of preparation method of thin-film solar cells, the bad point removing that will can be formed in GaAs layer growth process by design in the process of patterning, improves the utilance of GaAs layer.And owing to carrying out the stripping of sacrifice layer after first carrying out patterning to GaAs layer, the contact-making surface of stripper and sacrifice layer increases, and accelerates stripping process, improves production efficiency.
3, the invention provides a kind of preparation method of thin-film solar cells, can recycle after the GaAs substrate processing after removing sacrifice layer, the production cost effectively saved.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1-Fig. 5 is the cutaway view of thin-film solar cells of the present invention in preparation process;
Fig. 6 is the vertical view of Fig. 5.
In figure, Reference numeral is expressed as: 1-first electrode layer, 2-GaAs layer, 3-sacrifice layer, 4-GaAs substrate, 5-protective layer, 6-mask layer, 7-supporting layer, 8-the second electrode lay.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, the present invention will only be limited by claim.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.Should be understood that, when element such as layer, region or substrate be referred to as " being formed in " or " being arranged on " another element " on " time, this element can be set directly on another element described, or also can there is intermediary element.On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is not intermediary element.
The present embodiment provide a kind of thin-film solar cells and preparation method, as shown in Figure 5 and Figure 6, described thin-film solar cells comprises 4 fan-shaped battery units that same support 7 is formed, and each battery unit comprises the first electrode layer 1, GaAs layer 2 and the second electrode lay 8 that are cascading on supporting layer 7.As convertible embodiment of the present invention, the battery unit be formed on described supporting layer 7 is at least one, can have any shape, all can realize object of the present invention, belong to protection scope of the present invention.
The preparation method of described thin-film solar cells comprises the steps:
S1, as shown in Figure 1, form sacrifice layer 3, GaAs layer 2 by epitaxy technology successively at the upper surface of GaAs substrate 4, on GaAs layer 2, directly form the first electrode layer 1 by magnetron sputtering technique or electroplating technology.With ethanol, acetone, deionized water obtained semi-finished product cleaned and use dry nitrogen to purge, cleaning upper and lower surface.In the present embodiment, described sacrifice layer 3 is preferably Al
xga
1-xas layer.
S2, as shown in Figure 2, the surface of described first electrode layer 1 away from described GaAs layer 2 forms mask layer 6, forms protective layer 5 at the lower surface of described GaAs substrate 4 and side.Described mask layer 6 is selected from but is not limited to the inorganic acid resistance caustic corrosion material layers such as photoresist, adhesive tape, wax, and thickness is 10 μm ~ 100 μm.Described protective layer 5 is selected from but is not limited to the inorganic acid resistance caustic corrosion material layers such as photoresist, adhesive tape, wax.In the present embodiment, described mask layer 6 is preferably photoresist layer, and thickness is 50 μm, is obtained by spin coating, exposure, developing process; Described protective layer 5 is preferably photoresist layer, is obtained by spin coating proceeding.
S3, as shown in Figure 3, with the pattern in described mask layer 6 for template, carry out patterning by etching technics to described GaAs layer 2 and described first electrode layer 1, in the present embodiment, described etching technics is preferably wet etching, and etching solution is KI+I
2solution, rare HF solution, H
2s
2o
4+ H
2o
2+ H
2o solution, NH
3h
2o+H
2o
2+ H
3pO
4+ H
2o solution.
The pattern that step S3 is formed can be single figure, and also can be multiple graphs array, in described multiple graphs array, the spacing of adjacent pattern be greater than 100 μm.As shown in Figure 6, mask layer 6 described in the present embodiment comprises four 1/4 circles, and each adjacent pattern spacing is 1000 μm.
S4, as shown in Figure 4, remove described mask layer 6 and described protective layer 5 with acetone, the surface of described first electrode layer 1 away from described GaAs layer 2 forms supporting layer 7.Described supporting layer 7 is selected from but is not limited to glass substrate and polymeric substrates, and in the present embodiment, described supporting layer 7 is flexible pet substrate.
S5, as shown in Figure 5 semi-finished product obtained in step S4 are placed in the HF solution that concentration is 45wt%, removing sacrifice layer 3.And on described GaAs layer 2, the step of the second electrode lay 8 is formed by plating or magnetron sputtering technique.As shown in Figure 5 and Figure 6, in order to effectively collect photogenerated charge, in the present embodiment, described the second electrode lay 8 is gate-shaped electrode.
In this step, remove after the described GaAs substrate 4 after described sacrifice layer 3 cleans and can recycle, the production cost effectively saved.
The invention provides a kind of preparation method of thin-film solar cells, based on epitaxial wafer lift-off technology, first patterning is carried out to GaAs layer, after being loaded to by the GaAs layer after patterning on supporting layer, carry out the stripping of GaAs layer again.Adopt wet-etching technology, with the first metal layer and sacrifice layer for relying on, adding the intensity of GaAs layer in etching process, not only effectively prevent the damage of GaAs layer in patterning process, improve product yield, reduce production cost; And, can be various shape by GaAs layer etching, expand product design scope and the range of application of described thin-film solar cells.
Meanwhile, the bad point removing that will can be formed in GaAs layer growth process by design in the process of patterning, improves the utilance of GaAs layer.And owing to carrying out the stripping of sacrifice layer after first carrying out patterning to GaAs layer, the contact-making surface of stripper and sacrifice layer increases, and accelerates stripping process, improves production efficiency.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (10)
1. a preparation method for thin-film solar cells, is characterized in that, comprises the steps:
S1, form sacrifice layer, GaAs layer and the first electrode layer successively at the upper surface of GaAs substrate;
S2, on the surface of the first electrode layer away from GaAs layer, form mask layer;
S3, by etching technics, patterning is carried out to GaAs layer and the first electrode layer;
S4, removing mask layer, the surface of the first electrode layer away from GaAs layer forms supporting layer;
S5, removing sacrifice layer.
2. the preparation method of thin-film solar cells according to claim 1, is characterized in that, is also included in the lower surface of described GaAs substrate and the step of side formation protective layer in step S2.
3. the preparation method of thin-film solar cells according to claim 1 and 2, is characterized in that, the etching technics described in step S3 is wet etching.
4. the preparation method of the thin-film solar cells according to any one of claim 1-3, is characterized in that, the pattern that step S3 is formed is single figure.
5. the preparation method of the thin-film solar cells according to any one of claim 1-4, is characterized in that, the pattern that step S3 is formed is multiple graphs array.
6. the preparation method of thin-film solar cells according to claim 5, is characterized in that, in described multiple graphs array, the spacing of adjacent pattern is greater than 100 μm.
7. the preparation method of the thin-film solar cells according to any one of claim 1-6, is characterized in that, is also included in the step described GaAs layer being formed the second electrode lay after described step S5.
8. the preparation method of the thin-film solar cells according to any one of claim 1-7, is characterized in that, described mask layer is inorganic acid resistance caustic corrosion material layer, and thickness is 10 μm ~ 100 μm; Described protective layer is inorganic acid resistance caustic corrosion material layer.
9. the preparation method of the thin-film solar cells according to any one of claim 1-8, is characterized in that, described sacrifice layer is Al
xga
1-xas layer.
10. the thin-film solar cells prepared by preparation method of the thin-film solar cells described in an any one of claim 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410835909.9A CN104538497A (en) | 2014-12-29 | 2014-12-29 | Thin film solar cell and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410835909.9A CN104538497A (en) | 2014-12-29 | 2014-12-29 | Thin film solar cell and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN104538497A true CN104538497A (en) | 2015-04-22 |
Family
ID=52853996
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| CN201410835909.9A Pending CN104538497A (en) | 2014-12-29 | 2014-12-29 | Thin film solar cell and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950351A (en) * | 2019-03-19 | 2019-06-28 | 天津三安光电有限公司 | A kind of bent flexible solar cell and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070277874A1 (en) * | 2006-05-31 | 2007-12-06 | David Francis Dawson-Elli | Thin film photovoltaic structure |
| CN102157623A (en) * | 2011-03-08 | 2011-08-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Stripping transfer method of substrate of thin film solar cell |
| CN102956552A (en) * | 2012-08-21 | 2013-03-06 | 王伟明 | Preparation method for semiconductor device |
-
2014
- 2014-12-29 CN CN201410835909.9A patent/CN104538497A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070277874A1 (en) * | 2006-05-31 | 2007-12-06 | David Francis Dawson-Elli | Thin film photovoltaic structure |
| CN102157623A (en) * | 2011-03-08 | 2011-08-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Stripping transfer method of substrate of thin film solar cell |
| CN102956552A (en) * | 2012-08-21 | 2013-03-06 | 王伟明 | Preparation method for semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950351A (en) * | 2019-03-19 | 2019-06-28 | 天津三安光电有限公司 | A kind of bent flexible solar cell and preparation method thereof |
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Application publication date: 20150422 |