CN108933193A - A kind of transfer method of ferromagnetic semiconductor film and application - Google Patents
A kind of transfer method of ferromagnetic semiconductor film and application Download PDFInfo
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- CN108933193A CN108933193A CN201710385970.1A CN201710385970A CN108933193A CN 108933193 A CN108933193 A CN 108933193A CN 201710385970 A CN201710385970 A CN 201710385970A CN 108933193 A CN108933193 A CN 108933193A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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Abstract
The invention discloses a kind of transfer method of ferromagnetic semiconductor film and applications, and the method achieve transfer of (Ga, Mn) the As film on any substrate.(Ga, Mn) As film after transfer can physical characteristics different from other two-dimensional layer material (such as semimetal graphite alkene, semiconductor MoS2, superconductor NbSe2Deng) by the magnetic heterojunction structure of Van der Waals for building, it can be used for preparing novel self-spining device.The compatibility that (Ga, Mn) As film and traditional silicon technology integrated technology can be improved using the present invention has important meaning to the application for expanding spintronics.
Description
Technical field
The present invention relates to semiconductor etching process and film transferring technique field and Semiconductor Spintronics field, tools
Body is related to a kind of transfer method of ferromagnetic semiconductor film and the method using this method building Van der Waals hetero-junctions.
Background technique
Silicon-based complementary type metal oxide semiconductor (Complementary Metal Oxide Semiconductor,
CMOS) field effect transistor technique has evolved to 14nm technology node, it is contemplated that is up to its limit quickly, needs to find new
Information apparatus continues Moore's Law.The spintronics developed using electron spin freedom degree in manipulation semiconductor
(spintronics) the information storage and processing of more high density, higher speed and more low-power consumption can be achieved.Find suitable spin
Injection source is the key that realize Semiconductor Spintronics.Magnetic semiconductor has the advantage of three aspects as spin injection source：(1)
Can to avoid with conductivity semiconductor mismatch problems；It (2) can be with existing semiconductor technology compatibility；(3) spin with higher
Injection efficiency.1996, after magnetic semiconductor (Ga, Mn) As is successfully prepared, it was as a kind of representative
Magnetic semiconductor has extremely wide application in Semiconductor Spintronics field.
Currently preparing ferromagnetic semiconductor (Ga, Mn) As film mainly uses low temperature molecular beam epitaxy technology (LT-MBE).Point
Beamlet epitaxy technology requires (Ga, Mn) As film to be grown on the substrate of Lattice Matching, such as GaAs, (In, Ga) As etc..Due to this
The presence of substrate greatly limits the flexible Application based on (Ga, Mn) As film self-spining device.If can be thin by (Ga, Mn) As
Film is removed from its growth substrates, and is transferred to any substrate, is had to the basic and applied research based on (Ga, Mn) As film deep
Remote meaning.(Ga, Mn) As film after transfer can physical characteristics different from other two-dimensional layer material (such as semimetal
Graphene, semiconductor MoS2, superconductor NbSe2Deng) by the magnetic heterojunction structure of Van der Waals for building, it can be used for preparing new
Odd self-spining device.By transfer techniques, the compatibility of (Ga, Mn) As film and traditional silicon technology integrated technology can be improved,
There is important meaning to the application for expanding spintronics.
Summary of the invention
The purpose of the present invention is to provide it is a kind of by molecular beam epitaxy (MBE) growth ferromagnetic semiconductor (Ga, Mn) As from
The method removed and shifted on GaAs substrate can construct the Van der Waals hetero-junctions with other two-dimensional materials using this method
Structure, it is convenient further to carry out the heterojunction structure novelty physical characteristic research offer based on (Ga, Mn) As.
Technical scheme is as follows：
The transfer method of one kind (Ga, Mn) As ferromagnetic semiconductor film, includes the following steps：
1) using solid-state MBE growth at low temperature method (LT-MBE), to be had (Al, Ga) As on gaas substrates sacrificial
(Ga, Mn) As film of domestic animal layer；
2) in one layer of trichloro ethylene solution containing sealing wax of the uniform spin coating of (Ga, Mn) As film surface, cured, annealing
After processing, sealing wax film is formed as supporting layer；
3) sample is cleaved into required shape and size, exposes the section of (Al, Ga) As sacrificial layer；
4) sample is impregnated with low concentration hydrofluoric acid solution, the selective corrosion of (Al, Ga) As is made using hydrofluoric acid (Ga,
Mn) As film is detached from substrate；
5) SiO is used2(Ga, Mn) As film is pulled out, is dried by/Si substrate, and it is thin to dissolve removing (Ga, Mn) As with trichloro ethylene
The sealing wax of film surface；It is once purged in SiO2(Ga, Mn) As film sample is obtained in/Si target substrate.
Invention further provides a kind of Fan Dewa of (Ga, Mn) As ferromagnetic semiconductor film after transfer based on removing
The construction method of your this hetero-junctions, includes the following steps：
1) using solid-state MBE growth at low temperature method (LT-MBE), to be had (Al, Ga) As on gaas substrates sacrificial
(Ga, Mn) As film of domestic animal layer；
2) in one layer of trichloro ethylene solution containing sealing wax of the uniform spin coating of (Ga, Mn) As film surface, cured, annealing
After processing, Apiezon Wax W film is formed as supporting layer；
3) sample is cleaved into required shape and size, exposes the section of (Al, Ga) As sacrificial layer；
4) sample is impregnated with low concentration hydrofluoric acid solution, the selective corrosion of (Al, Ga) As is made using hydrofluoric acid (Ga,
Mn) As film is detached from substrate；
5) SiO is used2(Ga, Mn) As film is pulled out, is dried by/Si substrate, and it is thin to dissolve removing (Ga, Mn) As with trichloro ethylene
The sealing wax of film surface；It is once purged in SiO2(Ga, Mn) As film sample is obtained in/Si target substrate；
6) on micromanipulation platform, with polypropylene carbonate (PPC) film by SiO2(Ga, Mn) As film on/Si substrate
It sticks up, other two-dimensional materials is placed on, such as BN, MoS2On, constitute Van der Waals heterojunction structure.
Above-mentioned steps 1) in, Al component is between 20% -80% in (Al, Ga) As.
Above-mentioned steps 2) in sealing wax be dark waxy substance apiczon W type vacuum seal wax (Apiezon Wax W), should
Sealing wax is the general chemically inert wax compound of one kind under Britain A Peizuo (apiczon) brand, to some common
Etchant solution (such as hydrofluoric acid, nitric acid and acetic acid) has corrosion resistance, and can play support to relatively thin, more crisp material and make
With being commonly used for protective coating in microelectronic industry, (Ga, Mn) the As film stripped down can be supported in the art, prevented
It is crushed in the solution.
Above-mentioned steps 2) in, it is contemplated that influence the factor of the film quality of (Ga, Mn) As of removing：Sealing wax Apiezon
Wax W needs normal temperature cure in air more than half an hour it to be made thoroughly to be set in film surface；In 100 DEG C or so annealing 0.5-
Between 1 hour, above-mentioned processing mainly considers to adjust the stress of Apiezon Wax W protective layer, keeps its supporting role more significant.
Above-mentioned steps 4) in, in selective etching liquid, the main selective corrosion considered to (Al, Ga) As.Select hydrogen fluorine
Sour percent concentration be 6% -10% between weak solution as corrosive liquid.It can guarantee (Ga, Mn) the As film stripped down
Quality react the H of generation if hydrofluoric acid solution excessive concentration2Bubble can prevent corrosive liquid from entering (Al, Ga) As film layer,
Therefore the complete corrosion difficult to realize to (Al, Ga) As.Conversely, etching time is too long if hydrofluoric acid solution concentration is too low, due to
(Ga, Mn) As is relatively thin, and contacting hydrofluoric acid for a long time also will affect its quality.Then use disposable plastic dropper by (Ga, Mn) As
Film is fallen from substrate punching.
Above-mentioned steps 5) in, it should make to have the one side of Apiezon Wax W protective layer when fishing out film upward, after otherwise drying,
When removing Apiezon Wax W protective layer, (Ga, Mn) As film can fall off from target substrate.
Using superconducting quantum interference device (SQUID) (SQUID) to being transferred to SiO2The sample of/Si substrate carries out magnetic characterization.Measurement knot
Fruit shows that (Ga, Mn) the As film after removing and shifting still keeps the ferromagnetism before transfer, and Curie temperature is about 80K.
Above-mentioned steps 6) in, heterojunction structure construction method is a kind of dry method transfer method at clean interface.Polypropylene carbonate
It (PPC) is a kind of organic polymer, feature is that it can be controlled by temperature solidifies liquefaction process, to control it to sample
Viscous force.Entire transfer process is based on microscope and micromanipulation platform is completed.Transfer has the SiO of (Ga, Mn) As film2/Si
Substrate is placed on the small-sized hot plate under microlens.Polypropylene carbonate (PPC) film is by a small pieces dimethyl silicone polymer
(PDMS) it as support, is attached on glass slide and is fixed under micromanipulation arm.Under the microscope, PPC is allowed slowly to be adjacent to SiO2/
(Ga, Mn) As film on Si substrate, while hot plate heats up, (Ga, Mn) As film can be picked up by being then lifted out micromanipulation arm；
Then (Ga, Mn) the As film on PPC there is with removing the two-dimensional material in the target substrate of two-dimensional material be aligned and connect
Touching, while hot plate heats up, PPC melts at this time, is attached in target substrate.The PPC in target substrate then is removed with acetone bubble, i.e.,
The Van der Waals heterojunction structure of available (Ga, Mn) As film and two-dimensional material.This step can be repeated by control temperature
Two-dimensional material is repeatedly picked up, the stacking of multilayer two-dimension material is realized, is not limited only to the stacking of two kinds of two-dimensional materials.
Advantages of the present invention：
The present invention realizes the transfer by (Ga, Mn) As on any substrate.(Ga, Mn) As film after transfer can be with
Two-dimensional layer material (such as semimetal graphite alkene, the semiconductor MoS of physical characteristics different from other2, superconductor NbSe2Deng) pass through
Van der Waals for constructs magnetic heterojunction structure, can be used for preparing novel self-spining device.By transfer techniques, can be improved
The compatibility of (Ga, Mn) As film and traditional silicon technology integrated technology has important meaning to the application for expanding spintronics.
Detailed description of the invention
(Ga, Mn) As film is transferred to SiO by Fig. 12Optical photograph after/Si substrate, wherein the silver color part on substrate
For (Ga, Mn) As film；
Fig. 2 is transferred to SiO2The optical microscope photograph of (Ga, Mn) As film after/Si substrate；
Fig. 3 is using SQUID to being transferred to SiO2(Ga, Mn) As measured thin film obtained (a) M-H curve of/Si substrate
And (b) M-T curve, Curie temperature are about 80K；
Fig. 4 is using SQUID to (Ga, Mn) As measured thin film obtained (a) M-H curve before transfer and (b) M-T
Curve, Curie temperature are about 90K；
The dry method that Fig. 5 constructs (Ga, Mn) As/ two-dimensional material heterojunction structure shifts schematic diagram, wherein the PPC of (a) preparation is thin
The schematic diagram and (b) dry method transfer device schematic diagram of film；Wherein：1- silicon wafer；2- adhesive tape；3- microscope example bench；4- glass slide；
5-PDMS supporting block；6-PPC；7- (Ga, Mn) As film sample；8-SiO2/ Si substrate；9- hot plate；10- thermostat；11- is micro-
Operating platform；12-MoS2Sample；13-MoS2The SiO of sample2/ Si substrate；
Fig. 6 (Ga, Mn) As/MoS2Heterojunction structure optical microscope photograph, wherein (a) is transferred to SiO2After/Si substrate
Film；(b) with mechanical stripping method in SiO2Few layer MoS is obtained on/Si substrate2；(c) (Ga, Mn) As is served as a contrast from original with PPC film
(Ga, Mn) As after being picked up on bottom on PPC；(d) (Ga, Mn) As is put into target MoS2On the Van der Waals that constitute it is different
Matter knot.
Specific embodiment
(Ga, Mn) As/MoS combined with specific embodiments below2The preparation method and attached drawing of heterojunction structure are come to the present invention
It is described further, the range of but do not limit the invention in any way.
1, (Ga, Mn) As film with (Al, Ga) As sacrificial layer is grown on gaas substrates using LT-MBE technology.Tool
Body step is：First grow (Al, Ga) As sacrificial layer of 1000nm thickness, Al content therein on gaas substrates with LT-MBE technology
About 80%, (Ga, Mn) As of subsequent regrowth 20nm thickness.
2, supporting layer Apiezon Wax W solution is prepared.The specific steps are：5g Apiezon Wax W is dissolved in 20mL
Trichloro ethylene in, stirring, dissolution be sufficiently placed on refrigerator cold-storage save.
3, in (Ga, Mn) As sample surfaces spin coating Apiezon Wax W as support.The specific steps are：According to acetone, three
Vinyl chloride, acetone, ethyl alcohol, deionized water sequence clean epitaxial layer sample, and dry up.Then by the three of Apiezon Wax W
Vinyl chloride solution is equably spin-coated on sample epi-layer surface, and parameter is 2000 revs/min, and then solidification half is small in air
When, and anneal half an hour on 100 DEG C of hot plates.After sample is fully cooled, sample is cleaved into required shape and size, is revealed
The section of (Al, Ga) As sacrificial layer is out to corrode.
4, sample is impregnated with low concentration hydrofluoric acid, (Ga, Mn) As is made to the selective corrosion of (Al, Ga) As using hydrofluoric acid
Film is detached from substrate.Specifically operating procedure is：With the deionized water mixed preparing corrosion of the 40% HF solution and 20mL of 5mL
Liquid, concentration 8%.Etching time is 40h.During corrosion reaction, it can observe the slight turnup of epitaxial film and tilt.
When reaction is lasting for about 24-40h, epitaxial film is existing a little damaged, epitaxial film can be washed from substrate surface with plastic dropper at this time.
5, SiO is used2/ Si substrate pulls (Ga, Mn) As film out, dries.It is dissolved with trichloro ethylene and removes surface
Apiezon Wax W.Concrete operation step is：When epitaxial film disengaging substrate surface, picked up using silicon wafer or glass slide
It is put into deionized water and cleans 5 minutes, then use SiO2/ Si substrate is pulled out.Extra moisture is blotted with filter paper, stands number
Hour, then 110 DEG C of heating 5min of reusable heat plate, so that (Ga, Mn) As is sufficiently adsorbed on the surface of a substrate.Then, by sample
Product are put into trichloro ethylene and impregnate 5min, clear using acetone, ethyl alcohol, deionized water to dissolve the Apiezon Wax W on surface
It washes, can be obtained and be transferred to SiO2(Ga, Mn) As film sample of/Si substrate.Obtained (Ga, Mn) As sample is more complete
Whole, size is about 3 × 3mm2.The optics pictorial diagram and optical microscope photograph of obtained (Ga, Mn) As sample are right respectively
Answer attached Fig. 1 and 2.
6, M-H the and M-T curve of the sample before shifting and after transfer is measured respectively using SQUID.Measurement result shows to turn
Move on to SiO2(Ga, Mn) As sample of/Si substrate still has a ferromagnetism, Curie temperature be about before 80K, with transfer (Ga,
Mn) Curie temperature of As sample is consistent substantially.It can be seen that sample keeps the ferromagnetic property of sample before shifting substantially after transfer.
The measurement result of SQUID is as shown in figures 3 and 4.
7, polypropylene carbonate (PPC) film needed for the transfer of production dry method.In conjunction with attached drawing 5 (a), concrete operation step
For：6g polypropylene carbonate (PPC) is taken to be dissolved in the methyl phenyl ethers anisole of 40mL, it is 4 small with magnetic stirrer stirring at 160 DEG C
When, then use brown bottle room temperature preservation.It takes clean silicon wafer 1 to be cut into 1cm square, adhesive tape 2 is sticked on its surface, in adhesive tape 2
Aperture is marked in centre, exposes silicon wafer, diameter about 3mm.Then in its surface spin coating PPC, 3000 revs/min of revolving speed.Finally at 75 DEG C
Lower drying 5 minutes.
8, dimethyl silicone polymer (PDMS) supporting block needed for the transfer of production dry method.Concrete operation step is：Use 30mL
Performed polymer solution A and 1.7mL curing agent B solution are sufficiently mixed film forming in the culture dish for being placed in diameter 15cm and (put piece of silicon in bottom
Piece is so that film forming is uniformly open and flat), thickness is about 1mm.It is put into vacuum drying tower to vacuumize and saves a night, so that gas escapes.
Then it is toasted 3 hours with 75 DEG C of baking oven.The PDMS of preparation is cut into small pieces (3mm × 3mm), it is viscous several times to remove with adhesive tape
Surface dirt.Then cleaned 3 minutes with oxygen plasma.Then each PDMS fritter back side is sticked on glass slide, baking oven
75 DEG C are toasted to be kept for 1 hour.Finally again with the front of adhesive tape cleaning PDMS.
9、(Ga,Mn)As/MoS2The preparation of heterojunction structure.It is illustrated in conjunction with attached drawing 5 (b) and attached drawing 6, concrete operations
Step is：In two panels SiO2What (Ga, Mn) As film sample 7 and mechanical stripping after respectively obtaining transfer on/Si substrate obtained
MoS2Sample 12 respectively corresponds (a) and (b) of attached drawing 6.Adhesive plaster 2 after spin coating PPC6 is torn from silicon wafer 1, by middle circle
Bore portion PPC is adhered in PDMS supporting block 5, and the support of PPC is made of PDMS.Glass slide 4 is fixed on micromanipulation platform 11.
The SiO of (Ga, Mn) As film sample 7 will be shifted2/ Si substrate 8 is pasted on small-sized hot plate 9, is integrally placed at microscope example
On platform 3.After PPC6 is directed at (Ga, Mn) As sample, falling operating platform is adjacent to PPC slowly with sample, while using thermostat
10 make hot plate heating sample be warming up to 60 DEG C, are kept for 1 minute, are then cooled to room temperature.Slow lifting operations platform can incite somebody to action
(Ga, Mn) As sample is transferred on PPC from substrate, (c) of respective figure 6.MoS will then be had2The SiO of sample2/ Si substrate
13 are pasted on small-sized hot plate, are integrally placed on microscope example bench.(Ga, Mn) As sample on PPC is directed at MoS2Afterwards, it drops
Lower operating platform is adjacent to PPC slowly with sample, while so that hot plate heating sample is warming up to 90 DEG C with thermostat, and PPC can be gradually
Melt, attachment is on substrate.Subsequent lifting operations platform is that PPC and (Ga, Mn) As is made to stay in MoS simultaneously2On sample.Finally
Substrate is removed into PPC by acetone, ethyl alcohol, deionized water immersion, (Ga, Mn) As/MoS can be obtained2Heterojunction structure, correspondence are attached
(d) of Fig. 6.
Although the present invention has been disclosed in the preferred embodiments as above, however, it is not intended to limit the invention.It is any to be familiar with ability
The technical staff in domain, without departing from the scope of the technical proposal of the invention, all using in the methods and techniques of the disclosure above
Appearance makes many possible changes and modifications or equivalent example modified to equivalent change to technical solution of the present invention.Therefore,
Anything that does not depart from the technical scheme of the invention are made to the above embodiment any simple according to the technical essence of the invention
Modification, equivalent variations and modification, all of which are still within the scope of protection of the technical scheme of the invention.
Claims (9)
1. a kind of transfer method of ferromagnetic semiconductor film, includes the following steps：
1) using solid-state MBE growth at low temperature method had on gaas substrates (Al, Ga) As sacrificial layer (Ga,
Mn) As film；
2) in one layer of trichloro ethylene solution containing sealing wax of the uniform spin coating of (Ga, Mn) As film surface, cured, annealing
Later, sealing wax film is formed as supporting layer；
3) above-mentioned (Ga, Mn) As film with supporting layer is cleaved into required shape and size, exposes (Al, Ga) As and sacrifices
The section of layer；
4) it is impregnated with hydrofluoric acid solution, (Ga, Mn) with supporting layer is made to the selective corrosion of (Al, Ga) As using hydrofluoric acid
As film is detached from substrate；
5) SiO is used2Above-mentioned (Ga, Mn) As film with supporting layer is pulled out, is dried by/Si substrate, is dissolved and is removed with trichloro ethylene
The sealing wax of (Ga, Mn) As film surface；It is once purged in SiO2(Ga, Mn) As film is obtained in/Si target substrate.
2. transfer method as described in claim 1, which is characterized in that above-mentioned steps 1) in, Al component exists in (Al, Ga) As
Between 20% -80%.
3. transfer method as described in claim 1, which is characterized in that above-mentioned steps 2) in, sealing wax is vacuum seal wax
Apiezon Wax W, curing time be 0.5 hour or more, and 100 DEG C or so anneal 0.5-1 hour between.
4. transfer method as described in claim 1, which is characterized in that above-mentioned steps 4) in, the percentage of hydrofluoric acid solution is dense
Degree is between 6% -10%.
5. transfer method as described in claim 1, which is characterized in that above-mentioned steps 4) in, use SiO2/ Si substrate is by (Ga, Mn)
When As film is pulled out, upward by the one side of sealing wax.
6. a kind of construction method of the Van der Waals hetero-junctions of ferromagnetic semiconductor film, which is characterized in that use claim 1
The transfer method of the ferromagnetic semiconductor film, in SiO2(Ga, Mn) As film is obtained in/Si target substrate, then with poly-
Propylene carbonate film is by SiO2(Ga, Mn) As film sticks up on/Si substrate, and is placed in another two-dimensional material, and removal is poly-
Propylene carbonate film obtains the Van der Waals heterojunction structure of (Ga, Mn) As film and two-dimensional material.
7. construction method as claimed in claim 6, which is characterized in that polypropylene carbonate film is by a small pieces poly dimethyl silicon
Oxygen alkane is attached on glass slide and is fixed under micromanipulation arm, under the microscope, polypropylene carbonate is allowed slowly to paste as support
Tight SiO2(Ga, Mn) As film on/Si substrate, while hot plate heats up, and is then lifted out micromanipulation arm for (Ga, Mn) As film
It picks up；Then (Ga, Mn) the As film on polypropylene carbonate is aligned and is contacted with the two-dimensional material on substrate.
8. construction method as claimed in claim 6, which is characterized in that steep removal polypropylene carbonate film with acetone.
9. construction method as claimed in claim 6, which is characterized in that the two-dimensional material is semimetal graphite alkene, semiconductor
MoS2Or superconductor NbSe2。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110335819A (en) * | 2019-06-25 | 2019-10-15 | 杭州电子科技大学 | A kind of regulation method of two dimension Transition-metal dichalcogenide energy valley polarization characteristic |
| CN110828558A (en) * | 2019-10-29 | 2020-02-21 | 北京航空航天大学 | Preparation method of spin electronic device, prepared workpiece and preparation method of workpiece |
| CN111362258A (en) * | 2020-02-12 | 2020-07-03 | 浙江大学 | Graphene film transfer method using beeswax as supporting layer |
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| CN102157623A (en) * | 2011-03-08 | 2011-08-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Stripping transfer method of substrate of thin film solar cell |
| CN104332304A (en) * | 2014-10-17 | 2015-02-04 | 中国科学院半导体研究所 | Method for obtaining room-temperature ferromagnetic (Ga, Mn) As thin film with thickness of more than 10nm |
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2017
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157623A (en) * | 2011-03-08 | 2011-08-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Stripping transfer method of substrate of thin film solar cell |
| CN104332304A (en) * | 2014-10-17 | 2015-02-04 | 中国科学院半导体研究所 | Method for obtaining room-temperature ferromagnetic (Ga, Mn) As thin film with thickness of more than 10nm |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110335819A (en) * | 2019-06-25 | 2019-10-15 | 杭州电子科技大学 | A kind of regulation method of two dimension Transition-metal dichalcogenide energy valley polarization characteristic |
| CN110335819B (en) * | 2019-06-25 | 2021-04-30 | 杭州电子科技大学 | Method for regulating and controlling energy valley polarization characteristics of two-dimensional transition metal chalcogenide |
| CN110828558A (en) * | 2019-10-29 | 2020-02-21 | 北京航空航天大学 | Preparation method of spin electronic device, prepared workpiece and preparation method of workpiece |
| CN110828558B (en) * | 2019-10-29 | 2021-07-30 | 北京航空航天大学 | Preparation method of spin electronic device, prepared workpiece and preparation method of workpiece |
| CN111362258A (en) * | 2020-02-12 | 2020-07-03 | 浙江大学 | Graphene film transfer method using beeswax as supporting layer |
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