CN102157414A - Process monitoring method and device for channel MOS devices - Google Patents
Process monitoring method and device for channel MOS devices Download PDFInfo
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- CN102157414A CN102157414A CN2011100297071A CN201110029707A CN102157414A CN 102157414 A CN102157414 A CN 102157414A CN 2011100297071 A CN2011100297071 A CN 2011100297071A CN 201110029707 A CN201110029707 A CN 201110029707A CN 102157414 A CN102157414 A CN 102157414A
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Abstract
The invention relates to a process monitoring method and device for channel MOS devices. The method comprises the following steps of: determining the grid voltage and/or the grid leakage current of the soft breakdown point and the hard breakdown point of the batch of MOS devices; and applying detection voltage to the grid electrodes of the batch of channel MOS devices to be monitored, detecting the grid leakage current of the grid electrodes of the batch of channel MOS devices, and causing the voltage value of the detection voltage to range between the grid voltage of the soft breakdown point and that of the hard breakdown point, or applying detection current to the grid electrode of each channel MOS device, detecting the grid voltage of the grid electrode of each channel MOS device, and causing the value of the detection current to range between the grid leakage current of the soft breakdown point and that of the hard breakdown point. The invention can improve the process monitoring effect, and accurately detect the problem of process drift of the devices.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of process monitoring method and device of groove MOS device.
Background technology
Along with the continuous development of semiconductor technology, power device (Power Device) as a kind of new device, is widely used in as fields such as disk drive, automotive electronics.Power device needs to bear bigger voltage, electric current and power termination, and for example output rectifier requires to export about 3.3V voltage and input 10V voltage at input 20V voltage and exports about 1.5V voltage; And requirement can have the depleted voltage of 10V to 50V scope.And devices such as existing MOS transistor can't satisfy the demand, and for example the depleted voltage range of Schottky diode (Schottky diodes) is greatly about 0.5V, and therefore, in order to satisfy the needs of using, various power devices become the focus of concern.
Power device has that the high and low loss of input impedance, switching speed are fast, no second breakdown, the safety operation area is wide, dynamic property good, easily with the preceding utmost point the be coupled big electric currentization of realization, conversion efficiency advantages of higher.Power device commonly used has groove MOS device (Trench MOS), planar diffusion formula MOS device etc., and Fig. 1 shows the generalized section of a kind of groove MOS device of prior art.
As shown in Figure 1, this structure comprises: N
+The semiconductor-based end 10 of mixing; Be formed on the epitaxial loayer 11 at the semiconductor-based end 10, described epitaxial loayer 11 is N
-Mix; Be formed on the dopant well 12 on described epitaxial loayer 11 surfaces, described dopant well 12 mixes for the P type; The groove that runs through described dopant well 12; Gate dielectric layer 13 covers the bottom and the sidewall of described groove; Gate electrode 14 is formed on the described gate dielectric layer 13, fills up described groove; Source region 15 and source region 17 are formed in the dopant well 12 of described groove both sides, and be adjacent with described gate dielectric layer 13, is N
+Mix; Tagma 16 and tagma 18 are formed in the described dopant well 12, are P
+Mix.
The groove MOS device that has comprised 2 symmetries among Fig. 1, concrete, the semiconductor-based end 10, epitaxial loayer 11, dopant well 12, source region 15, gate dielectric layer 13 and gate electrode 14 have constituted one of them groove MOS device, the wherein semiconductor-based end 10, is as drain electrode, source region 15 is as source electrode, the part of the dopant well 12 adjacent with gate dielectric layer 13 is as channel region between epitaxial loayer 11 and the source region 15, and tagma 16 is identical with the doping type of dopant well 12, as the body electrode; The semiconductor-based end 10, dopant well 12, source region 17, gate dielectric layer 13 and gate electrode 14 have constituted another groove MOS, the wherein semiconductor-based end 10, is as drain electrode, source region 17 is as source electrode, the part of the dopant well 12 adjacent with gate dielectric layer 13 is as channel region between epitaxial loayer 11 and the source region 17, tagma 18 is identical with the doping type of dopant well 12, as the body electrode.Because the shape of epitaxial loayer 11 and gate dielectric layer 13 is " U " shape, thereby such groove MOS device is called the UMOS transistor again.
Fig. 2 shows the grid leakage current-gate voltage curve of groove MOS device shown in Figure 1, and along with the continuous increase of grid voltage, before soft breakdown point (soft breakdown) A, grid leakage current is less, and the increase with grid voltage does not change; Between soft breakdown point A and hard breakdown point (hard breakdown) B, grid leakage current slowly increases along with the increase of grid voltage; After hard breakdown point B, gate capacitance is breakdown, and grid leakage current increases rapidly.
In theory, produce down for same batch, a plurality of groove MOS devices of promptly under specific process conditions, producing, grid leakage current-the gate voltage curve of its expectation should be more stable, deviation between each device is less, but in actual production, the etching process of groove, the forming process of gate dielectric layer all can cause the fluctuation and the change of the grid leakage current-gate voltage curve of device, therefore, prior art utilizes grid leakage current-gate voltage curve to carry out process monitoring (process monitor) usually.
Still with reference to figure 2, can't all draw out grid leakage current-gate voltage curve to each device in the process monitoring process of prior art, monitor but after determining expectation curve, only choose one or two point therein.For example: choose soft breakdown point A control point C before, apply the grid voltage (being about 15V among Fig. 2) of control point C correspondence at the grid of device to be monitored, whether detect its corresponding grid leakage current, it is stable to monitor the grid leakage current of each device under this grid voltage; Perhaps choose hard breakdown point B control point D afterwards, apply the grid leakage current (being about 1mA among Fig. 2) of control point D correspondence at the grid of device to be monitored, whether detect its corresponding grid voltage, it is stable at the grid voltage that this electric leakage of the grid flows down correspondence to monitor each device.
But, prior art is in the process monitoring process, the control point of choosing is often before soft breakdown point A, promptly be applied to detection voltage on the grid less than the grid voltage of soft breakdown point A correspondence, the excursion of the grid leakage current that it is corresponding itself is just very little, thereby the offset problem of grid leakage current-gate voltage curve of causing of the process shifts that can't detect individual devices, the effect of process monitoring is relatively poor; In addition, prior art also often is chosen at the control point after the hard breakdown point B, promptly be applied to detection electric current on the grid greater than the grid leakage current of hard breakdown point B correspondence, the excursion of the grid voltage that it is corresponding is also very little, also can't detect the offset problem of grid leakage current-gate voltage curve that the process shifts of device causes.
Summary of the invention
The problem that the present invention solves is that the monitoring effect of process monitoring method of groove MOS device of prior art is relatively poor, can't detect the process drift problem of device.
For addressing the above problem, the invention provides a kind of method for supervising of groove MOS device, comprising:
Determine the soft breakdown point of this batch groove MOS device and the grid voltage and/or the grid leakage current of hard breakdown point;
Grid to this batch groove MOS device to be monitored applies detection voltage and detects its grid leakage current, the magnitude of voltage of described detection voltage is between the grid voltage of described soft breakdown point and hard breakdown point, or the grid of each groove MOS device applied detect electric current and detect its grid voltage, the current value of described detection electric current is between the grid leakage current of described soft breakdown point and hard breakdown point.
Optionally, described detection voltage is positive voltage or negative voltage.
Optionally, the grid voltage and/or the grid leakage current of the soft breakdown of described definite this batch groove MOS device electricity point and hard breakdown point comprise:
From this batch groove MOS device, choose one or more devices as sample;
Grid voltage to the device in the described sample scans and detects grid leakage current, obtains grid leakage current-gate voltage curve, determines the grid voltage and/or the grid leakage current of soft breakdown point and hard breakdown point.
For addressing the above problem, the present invention also provides a kind of process monitoring device of groove MOS device, comprising:
Soft/hard breakdown point determining unit, be suitable for determining the soft breakdown point of this batch groove MOS device and the grid voltage and/or the grid leakage current of hard breakdown point;
Detecting unit, be suitable for the grid of this batch groove MOS device to be monitored is applied detection voltage and detects its grid leakage current, the magnitude of voltage of described detection voltage is between the grid voltage of described soft breakdown point and hard breakdown point, or the grid of each groove MOS device applied detect electric current and detect its grid voltage, the current value of described detection electric current is between the grid leakage current of described soft breakdown point and hard breakdown point.
Optionally, described detection voltage is positive voltage or negative voltage.
Optionally, described soft/hard breakdown point determining unit comprises:
Sampling unit is suitable for choosing one or more devices as sample from this batch groove MOS device;
The scanning detecting unit is suitable for the grid voltage of the device in the described sample is scanned and detect grid leakage current, obtains grid leakage current-gate voltage curve, determines the grid voltage and/or the grid leakage current of soft breakdown point and hard breakdown point.
Compared with prior art, technical scheme of the present invention has following advantage:
The technical program applies detection voltage and detects its grid leakage current the grid of groove MOS device to be monitored, the magnitude of voltage of described detection voltage is between the grid voltage of described soft breakdown point and hard breakdown point, or the grid of each groove MOS device applied detect electric current and detect its grid voltage, the current value of described detection electric current is between the grid leakage current of described soft breakdown point and hard breakdown point.The technical program is chosen in the part between the soft breakdown point and hard breakdown point in grid leakage current-gate voltage curve with the control point, because grid leakage current is with grid voltage near-linear variation slowly in this part, make testing result more responsive, improved monitoring effect the process shifts of device.
Description of drawings
Fig. 1 is the generalized section of a kind of groove MOS device of prior art;
Fig. 2 is the grid leakage current-gate voltage curve of process monitoring method correspondence of a kind of groove MOS device of prior art;
Fig. 3 is the schematic flow sheet of process monitoring method of the groove MOS device of the embodiment of the invention;
Fig. 4 is the grid leakage current-gate voltage curve of process monitoring method correspondence of the groove MOS device of the embodiment of the invention;
Fig. 5 is the structural representation of process monitoring device of the groove MOS device of the embodiment of the invention.
Embodiment
In the prior art when carrying out the process monitoring of groove MOS device, the control point often be chosen in before the soft breakdown point or hard breakdown point after, variation relation between grid voltage and the grid leakage current is not clearly, possibly can't detect the process shifts of device, and monitoring effect is relatively poor.
The technical program applies detection voltage and detects its grid leakage current the grid of groove MOS device to be monitored, the magnitude of voltage of described detection voltage is between the grid voltage of described soft breakdown point and hard breakdown point, or the grid of each groove MOS device applied detect electric current and detect its grid voltage, the current value of described detection electric current is between the grid leakage current of described soft breakdown point and hard breakdown point.The technical program is chosen in the part between the soft breakdown point and hard breakdown point in grid leakage current-gate voltage curve with the control point, because grid leakage current is with grid voltage near-linear variation slowly in this part, make testing result more responsive, improved monitoring effect the process shifts of device.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention is not subjected to the restriction of following public embodiment.
Fig. 3 shows the schematic flow sheet of process monitoring method of the groove MOS device of the embodiment of the invention, as shown in Figure 3, comprising:
Step S21 determines the soft breakdown point of this batch groove MOS device and the grid voltage and/or the grid leakage current of hard breakdown point;
Step S22, grid to this batch groove MOS device to be monitored applies detection voltage and detects its grid leakage current, the magnitude of voltage of described detection voltage is between the grid voltage of described soft breakdown point and hard breakdown point, or the grid of each groove MOS device applied detect electric current and detect its grid voltage, the current value of described detection electric current is between the grid leakage current of described soft breakdown point and hard breakdown point.
The soft breakdown point of batch groove MOS device of this described in the step S21 and the grid voltage and the grid leakage current of hard breakdown point refer in actual production, the soft breakdown point of one batch the groove MOS device of under specific process conditions, producing and the grid voltage of hard breakdown point and the desired value of grid leakage current, after each manufacturing parameter adjusting of processing technology is determined, the soft breakdown point of the groove MOS device of production gained and the grid voltage of hard breakdown point and the desired value of grid leakage current are determined, that is to say that the grid voltage of soft breakdown point of each device and the grid voltage and the grid leakage current of grid current and hard breakdown point are to drop in the definite scope, and occur individually except the device of process deviation.
In the present embodiment, the soft breakdown point of this batch groove MOS device and the grid voltage of hard breakdown point and definite method of grid leakage current comprise: choose one or more devices as sample from this batch groove MOS device; Grid voltage to the device in the described sample scans and detects grid leakage current, obtains grid leakage current-gate voltage curve, determines the grid voltage and/or the grid leakage current of soft breakdown point and hard breakdown point.Preferably, the device that is selected in the sample is a normal component, be that parameter conforms with design specification, be not subjected to the influence of factors such as process drift, grid voltage to the device in the sample scans (from low to high or from high to low) afterwards, and detect corresponding grid leakage current, obtain grid leakage current-gate voltage curve, as shown in Figure 4, wherein said grid voltage is applied on the grid and body electrode of groove MOS device, can be positive voltage, also can be negative voltage, the voltage that described positive voltage refers to grid is higher than the voltage of body electrode, and the voltage that described negative voltage refers to grid is lower than the voltage of body electrode; Afterwards, on described grid leakage current-gate voltage curve, determine soft breakdown point A and hard breakdown point B, and grid voltage and/or the grid leakage current of definite accordingly soft breakdown point A and hard breakdown point B, grid voltage and grid leakage current refer to the absolute value of grid voltage and grid leakage current here.In the present embodiment, the grid voltage of soft breakdown point A is about 20V, and grid leakage current is about 1.0E-10A, and the grid voltage of hard breakdown point B is about 40V, and grid leakage current is about 1.0E-5A.
After definite described soft breakdown point A and hard breakdown point B, each groove MOS device in this batch to be monitored is detected, the test point of selection is between soft breakdown point A and hard breakdown point B, as test point E, test point F etc.Detection method can be to apply detection voltage and detect its grid leakage current at the grid of groove MOS device to be monitored and body electrode, the magnitude of voltage of described detection voltage is between the grid voltage of described soft breakdown point A and hard breakdown point B, can be that positive voltage also can be a negative voltage, magnitude of voltage shown in Fig. 4 is an absolute value, similarly, the voltage that described positive voltage refers to grid is higher than the voltage of body electrode, and the voltage that described negative voltage refers to grid is lower than the voltage of body electrode; Perhaps also can be that grid at groove MOS device to be measured applies and detects electric current and detect its grid voltage, the current value of described detection electric current be between the grid leakage current of described soft breakdown point A and hard breakdown point B.Described " between " refer to the magnitude of voltage that detects voltage grid voltage more than or equal to soft breakdown point A, grid voltage smaller or equal to hard breakdown point B, detect the grid leakage current of the current value of electric current more than or equal to soft breakdown point A, grid leakage current smaller or equal to hard breakdown point B, similarly, the current value of the magnitude of voltage of above-mentioned detection voltage and detection electric current all refers to absolute value.
In one embodiment, can only determine the grid voltage of soft breakdown point A and hard breakdown point B among the step S21, grid to this batch device to be monitored applies detection voltage and detects its grid leakage current in step S22 afterwards, wherein detects voltage between the grid voltage of described soft breakdown point A and hard breakdown point B; In another specific embodiment, can only determine the grid leakage current of soft breakdown point A and hard breakdown point B among the step S21, grid to this batch device to be monitored applies the detection electric current and detects its grid voltage in step S22 afterwards, wherein detects electric current between the grid leakage current of described soft breakdown point A and hard breakdown point B; In another specific embodiment, can determine grid voltage and the grid leakage current of described soft breakdown point A and hard breakdown point B among the step S21, in step S22, detect the grid voltage or the grid leakage current of device to be monitored afterwards, perhaps not only detected the grid voltage of device to be monitored but also detected the grid leakage current of device to be monitored.
Because the test point of choosing in the present embodiment is between soft breakdown point and hard breakdown point, grid leakage current is more slowly with grid voltage, and near-linear changes, testing result is comparatively responsive to process shifts, if certain device is because process shifts causes its grid leakage current-gate voltage curve to be offset, then its detected grid leakage current or grid voltage can have tangible difference with other devices that process shifts does not take place, need this device is rejected or checked the setting of processing parameter, thereby improved the effect of process monitoring significantly.The process monitoring method of present embodiment is applicable to groove MOS device as shown in Figure 1, or the grid of other types is formed at the groove MOS device in the groove.
Corresponding to the process monitoring method of above-mentioned groove MOS device, the present invention also provides a kind of process monitoring device of groove MOS device.Fig. 5 shows the structural representation of process monitoring device of the groove MOS device of present embodiment, as shown in Figure 5, comprise: soft/hard breakdown point determining unit 31, be suitable for determining the soft breakdown point of this batch groove MOS device and the grid voltage and/or the grid leakage current of hard breakdown point; Detecting unit 32, be suitable for the grid of this batch groove MOS device to be monitored is applied detection voltage and detects its grid leakage current, the magnitude of voltage of described detection voltage is between the grid voltage of described soft breakdown point and hard breakdown point, or the grid of each groove MOS device applied detect electric current and detect its grid voltage, the current value of described detection electric current is between the grid leakage current of described soft breakdown point and hard breakdown point.
Wherein, soft/hard breakdown point determining unit 31 comprises: sampling unit 311 is suitable for choosing one or more devices as sample from this batch groove MOS device; Scanning detecting unit 312 is suitable for the grid voltage of the device in the described sample is scanned and detect grid leakage current, obtains grid leakage current-gate voltage curve, determines the grid voltage and/or the grid leakage current of soft breakdown point and hard breakdown point.About the course of work of the process monitoring device of this groove MOS device and the description of the process monitoring method that principle sees also groove MOS device in the previous embodiment, repeat no more here.
To sum up, the technical program applies detection voltage and detects its grid leakage current the grid of groove MOS device to be monitored, the magnitude of voltage of described detection voltage is between the grid voltage of described soft breakdown point and hard breakdown point, or the grid of each groove MOS device applied detect electric current and detect its grid voltage, the current value of described detection electric current is between the grid leakage current of described soft breakdown point and hard breakdown point.The technical program is chosen in the part between the soft breakdown point and hard breakdown point in grid leakage current-gate voltage curve with the control point, because grid leakage current is with grid voltage near-linear variation slowly in this part, make testing result more responsive to the process shifts of device, can detect the process drift problem of device accurately, improve monitoring effect.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (6)
1. the process monitoring method of a groove MOS device is characterized in that, comprising:
Determine the soft breakdown point of this batch groove MOS device and the grid voltage and/or the grid leakage current of hard breakdown point;
Grid to this batch groove MOS device to be monitored applies detection voltage and detects its grid leakage current, the magnitude of voltage of described detection voltage is between the grid voltage of described soft breakdown point and hard breakdown point, or the grid of each groove MOS device applied detect electric current and detect its grid voltage, the current value of described detection electric current is between the grid leakage current of described soft breakdown point and hard breakdown point.
2. the process monitoring method of groove MOS device according to claim 1 is characterized in that, described detection voltage is positive voltage or negative voltage.
3. the process monitoring method of groove MOS device according to claim 1 is characterized in that, the soft breakdown electricity point of described definite this batch groove MOS device and the grid voltage and/or the grid leakage current of hard breakdown point comprise:
From this batch groove MOS device, choose one or more devices as sample;
Grid voltage to the device in the described sample scans and detects grid leakage current, obtains grid leakage current-gate voltage curve, determines the grid voltage and/or the grid leakage current of soft breakdown point and hard breakdown point.
4. the process monitoring device of a groove MOS device is characterized in that, comprising:
Soft/hard breakdown point determining unit, be suitable for determining the soft breakdown point of this batch groove MOS device and the grid voltage and/or the grid leakage current of hard breakdown point;
Detecting unit, be suitable for the grid of this batch groove MOS device to be monitored is applied detection voltage and detects its grid leakage current, the magnitude of voltage of described detection voltage is between the grid voltage of described soft breakdown point and hard breakdown point, or the grid of each groove MOS device applied detect electric current and detect its grid voltage, the current value of described detection electric current is between the grid leakage current of described soft breakdown point and hard breakdown point.
5. the process monitoring device of groove MOS device according to claim 4 is characterized in that, described detection voltage is positive voltage or negative voltage.
6. the process monitoring device of groove MOS device according to claim 4 is characterized in that, described soft/hard breakdown point determining unit comprises:
Sampling unit is suitable for choosing one or more devices as sample from this batch groove MOS device;
The scanning detecting unit is suitable for the grid voltage of the device in the described sample is scanned and detect grid leakage current, obtains grid leakage current-gate voltage curve, determines the grid voltage and/or the grid leakage current of soft breakdown point and hard breakdown point.
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