CN102157414B - The process monitoring method of groove MOS device and device - Google Patents
The process monitoring method of groove MOS device and device Download PDFInfo
- Publication number
- CN102157414B CN102157414B CN201110029707.1A CN201110029707A CN102157414B CN 102157414 B CN102157414 B CN 102157414B CN 201110029707 A CN201110029707 A CN 201110029707A CN 102157414 B CN102157414 B CN 102157414B
- Authority
- CN
- China
- Prior art keywords
- voltage
- grid
- breakdown point
- leakage current
- mos device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The process monitoring method of groove MOS device and a device, described method comprises: determine the soft breakdown point of this batch of groove MOS device and the grid voltage of hard breakdown point and/or grid leakage current; Apply detect voltage and detect its grid leakage current to the grid of this batch of groove MOS device to be monitored, the magnitude of voltage of described detection voltage is between described soft breakdown point and the grid voltage of hard breakdown point, or apply detect electric current and detect its grid voltage to the grid of each groove MOS device, the current value of described detection electric current is between described soft breakdown point and the grid leakage current of hard breakdown point.The present invention can improve process monitoring effect, detects the process drift problem of device accurately.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of process monitoring method of groove MOS device and device.
Background technology
Along with the development of semiconductor technology, power device (PowerDevice), as a kind of new device, is widely used in as the field such as disk drive, automotive electronics.Power device needs to bear larger voltage, electric current and power termination, and such as output rectifier requires to export about 3.3V voltage at input 20V voltage and input 10V voltage and export about 1.5V voltage; And requirement can have the exhaustion voltage of 10V to 50V scope.And the devices such as existing MOS transistor cannot meet the demand, such as the exhaustion voltage range of Schottky diode (Schottkydiodes) is greatly about 0.5V, and therefore, in order to the needs of satisfied application, various power device becomes the focus of concern.
Power device has the high and low loss of input impedance, switching speed is fast, without second breakdown, safety operation area is wide, dynamic property good, being easily coupled with front pole realizes big current, conversion efficiency advantages of higher.Conventional power device has groove MOS device (TrenchMOS), planar diffusion formula MOS device etc., and Fig. 1 shows the generalized section of a kind of groove MOS device of prior art.
As shown in Figure 1, this structure comprises: N
+the semiconductor base 10 of doping; Be formed in the epitaxial loayer 11 on semiconductor base 10, described epitaxial loayer 11 is N
-doping; Be formed in the dopant well 12 on described epitaxial loayer 11 surface, described dopant well 12 is the doping of P type; Run through the groove of described dopant well 12; Gate dielectric layer 13, covers bottom and the sidewall of described groove; Gate electrode 14, is formed on described gate dielectric layer 13, fills up described groove; Source region 15 and source region 17, be formed in the dopant well 12 of described groove both sides, adjacent with described gate dielectric layer 13, is N
+doping; Tagma 16 and tagma 18, be formed in described dopant well 12, is P
+doping.
2 symmetrical groove MOS devices are included in Fig. 1, concrete, semiconductor base 10, epitaxial loayer 11, dopant well 12, source region 15, gate dielectric layer 13 and gate electrode 14 constitute one of them groove MOS device, wherein semiconductor base 10 is as drain electrode, source region 15 is as source electrode, the part of dopant well 12 adjacent with gate dielectric layer 13 between epitaxial loayer 11 and source region 15 is as channel region, and tagma 16 is identical with the doping type of dopant well 12, as body electrode; Semiconductor base 10, dopant well 12, source region 17, gate dielectric layer 13 and gate electrode 14 constitute another groove MOS, wherein semiconductor base 10 is as drain electrode, source region 17 is as source electrode, the part of dopant well 12 adjacent with gate dielectric layer 13 between epitaxial loayer 11 and source region 17 is as channel region, tagma 18 is identical with the doping type of dopant well 12, as body electrode.Because the shape of epitaxial loayer 11 and gate dielectric layer 13 is " U " shape, thus such groove MOS device is also called UMOS transistor.
Fig. 2 shows the grid leakage current-gate voltage curve of the groove MOS device shown in Fig. 1, along with the continuous increase of grid voltage, before soft breakdown point (softbreakdown) A, grid leakage current is less, does not change with the increase of grid voltage; Between soft breakdown point A and hard breakdown point (hardbreakdown) B, grid leakage current slowly increases along with the increase of grid voltage; After hard breakdown point B, gate capacitance is breakdown, and grid leakage current increases rapidly.
In theory, produce under same batch, namely the multiple groove MOS devices produced under specific process conditions, its grid leakage current-gate voltage curve expected should be more stable, deviation between each device is less, but in actual production, the etching process of groove, the forming process of gate dielectric layer all can cause fluctuation and the change of the grid leakage current-gate voltage curve of device, therefore, prior art utilizes grid leakage current-gate voltage curve to carry out process monitoring (processmonitor) usually.
Still with reference to figure 2, in the process monitoring process of prior art, grid leakage current-gate voltage curve can't be drawn out to each device, but only choose wherein after determining expectation curve one or two point monitor.Such as: choose the control point C before soft breakdown point A, grid voltage (being about 15V in Fig. 2) corresponding to control point C is applied at the grid of device to be monitored, detect its corresponding grid leakage current, monitor the grid leakage current of each device under this grid voltage and whether stablize; Or the control point D chosen after hard breakdown point B, grid leakage current (being about 1mA in Fig. 2) corresponding to control point D is applied at the grid of device to be monitored, detect its corresponding grid voltage, monitor each device and flow down corresponding grid voltage at this electric leakage of the grid and whether stablize.
But, prior art is in process monitoring process, the control point chosen is often before soft breakdown point A, namely the detection voltage be applied on grid is less than grid voltage corresponding to soft breakdown point A, the excursion of the grid leakage current of its correspondence is inherently very little, thus cannot detect the offset problem of grid leakage current-gate voltage curve that the process shifts of particular device causes, the effect of process monitoring is poor; In addition, after control point is also often chosen at hard breakdown point B by prior art, namely the detection electric current be applied on grid is greater than grid leakage current corresponding to hard breakdown point B, the excursion of the grid voltage of its correspondence is also very little, also cannot detect the offset problem of grid leakage current-gate voltage curve that the process shifts of device causes.
Summary of the invention
The problem that the present invention solves is that the monitoring effect of the process monitoring method of the groove MOS device of prior art is poor, cannot detect the process drift problem of device.
For solving the problem, the invention provides a kind of method for supervising of groove MOS device, comprising:
Determine the soft breakdown point of this batch of groove MOS device and the grid voltage of hard breakdown point and/or grid leakage current;
Apply detect voltage and detect its grid leakage current to the grid of this batch of groove MOS device to be monitored, the magnitude of voltage of described detection voltage is between described soft breakdown point and the grid voltage of hard breakdown point, or apply detect electric current and detect its grid voltage to the grid of each groove MOS device, the current value of described detection electric current is between described soft breakdown point and the grid leakage current of hard breakdown point.
Optionally, described detection voltage is positive voltage or negative voltage.
Optionally, described determine this batch of groove MOS device soft breakdown electricity point and the grid voltage of hard breakdown point and/or grid leakage current comprise:
One or more device is chosen as sample from this batch of groove MOS device;
The grid voltage of the device in described sample scanned and detects grid leakage current, obtaining grid leakage current-gate voltage curve, determine grid voltage and/or the grid leakage current of soft breakdown point and hard breakdown point.
For solving the problem, present invention also offers a kind of process monitoring device of groove MOS device, comprising:
Soft/hard breakdown point determining unit, is suitable for determining the soft breakdown point of this batch of groove MOS device and the grid voltage of hard breakdown point and/or grid leakage current;
Detecting unit, be suitable for applying detect voltage and detect its grid leakage current to the grid of this batch of groove MOS device to be monitored, the magnitude of voltage of described detection voltage is between described soft breakdown point and the grid voltage of hard breakdown point, or apply detect electric current and detect its grid voltage to the grid of each groove MOS device, the current value of described detection electric current is between described soft breakdown point and the grid leakage current of hard breakdown point.
Optionally, described detection voltage is positive voltage or negative voltage.
Optionally, described soft/hard breakdown point determining unit comprises:
Sampling unit, is suitable for choosing one or more device as sample from this batch of groove MOS device;
Scanning Detction unit, is suitable for scanning the grid voltage of the device in described sample and detecting grid leakage current, obtains grid leakage current-gate voltage curve, determines grid voltage and/or the grid leakage current of soft breakdown point and hard breakdown point.
Compared with prior art, technical scheme of the present invention has the following advantages:
The technical program applies detect voltage and detect its grid leakage current to the grid of groove MOS device to be monitored, the magnitude of voltage of described detection voltage is between described soft breakdown point and the grid voltage of hard breakdown point, or apply detect electric current and detect its grid voltage to the grid of each groove MOS device, the current value of described detection electric current is between described soft breakdown point and the grid leakage current of hard breakdown point.The part in grid leakage current-gate voltage curve between soft breakdown point and hard breakdown point is selected in control point by the technical program, because grid leakage current in this part is with grid voltage near-linear change slowly, make testing result more responsive to the process shifts of device, improve monitoring effect.
Accompanying drawing explanation
Fig. 1 is the generalized section of a kind of groove MOS device of prior art;
Fig. 2 is grid leakage current-gate voltage curve corresponding to the process monitoring method of a kind of groove MOS device of prior art;
Fig. 3 is the schematic flow sheet of the process monitoring method of the groove MOS device of the embodiment of the present invention;
Fig. 4 is grid leakage current-gate voltage curve corresponding to the process monitoring method of the groove MOS device of the embodiment of the present invention;
Fig. 5 is the structural representation of the process monitoring device of the groove MOS device of the embodiment of the present invention.
Embodiment
In prior art when carrying out the process monitoring of groove MOS device, control point is often selected before soft breakdown point or after hard breakdown point, variation relation between grid voltage and grid leakage current is not clearly, and possibly cannot detect the process shifts of device, monitoring effect is poor.
The technical program applies detect voltage and detect its grid leakage current to the grid of groove MOS device to be monitored, the magnitude of voltage of described detection voltage is between described soft breakdown point and the grid voltage of hard breakdown point, or apply detect electric current and detect its grid voltage to the grid of each groove MOS device, the current value of described detection electric current is between described soft breakdown point and the grid leakage current of hard breakdown point.The part in grid leakage current-gate voltage curve between soft breakdown point and hard breakdown point is selected in control point by the technical program, because grid leakage current in this part is with grid voltage near-linear change slowly, make testing result more responsive to the process shifts of device, improve monitoring effect.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here to implement with multiple, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention.Therefore the present invention is not by the restriction of following public embodiment.
Fig. 3 shows the schematic flow sheet of the process monitoring method of the groove MOS device of the embodiment of the present invention, as shown in Figure 3, comprising:
Step S21, determines the soft breakdown point of this batch of groove MOS device and the grid voltage of hard breakdown point and/or grid leakage current;
Step S22, apply detect voltage and detect its grid leakage current to the grid of this batch of groove MOS device to be monitored, the magnitude of voltage of described detection voltage is between described soft breakdown point and the grid voltage of hard breakdown point, or apply detect electric current and detect its grid voltage to the grid of each groove MOS device, the current value of described detection electric current is between described soft breakdown point and the grid leakage current of hard breakdown point.
The soft breakdown point of this batch of groove MOS device described in step S21 and the grid voltage of hard breakdown point and grid leakage current refer in actual production, the soft breakdown point of the groove MOS device of batch that produces under specific process conditions and the grid voltage of hard breakdown point and the desired value of grid leakage current, after each manufacturing parameter adjustment of processing technology is determined, produce the soft breakdown point of groove MOS device of gained and the grid voltage of hard breakdown point and the desired value of grid leakage current to determine, that is the grid voltage of the soft breakdown point of each device and the grid voltage of grid current and hard breakdown point and grid leakage current drop in a scope determined, and except the device occurring individually process deviation.
In the present embodiment, the soft breakdown point of this batch of groove MOS device and the grid voltage of hard breakdown point and the defining method of grid leakage current comprise: from this batch of groove MOS device, choose one or more device as sample; The grid voltage of the device in described sample scanned and detects grid leakage current, obtaining grid leakage current-gate voltage curve, determine grid voltage and/or the grid leakage current of soft breakdown point and hard breakdown point.Preferably, the device be selected in sample is normal component, namely parameter conforms with design specification, be not subject to the impact of the factors such as process drift, afterwards (from low to high or from high to low) is scanned to the grid voltage of the device in sample, and detect corresponding grid leakage current, obtain grid leakage current-gate voltage curve, as shown in Figure 4, on the grid that wherein said grid voltage is applied to groove MOS device and body electrode, it can be positive voltage, also can be negative voltage, described positive voltage refers to the voltage of voltage higher than body electrode of grid, described negative voltage refers to the voltage of voltage lower than body electrode of grid, afterwards, described grid leakage current-gate voltage curve is determined soft breakdown point A and hard breakdown point B, and determine grid voltage and/or the grid leakage current of soft breakdown point A and hard breakdown point B accordingly, grid voltage and grid leakage current refer to the absolute value of grid voltage and grid leakage current here.In the present embodiment, the grid voltage of soft breakdown point A is about 20V, and grid leakage current is about 1.0E-10A, and the grid voltage of hard breakdown point B is about 40V, and grid leakage current is about 1.0E-5A.
After determining described soft breakdown point A and hard breakdown point B, each groove MOS device in this batch to be monitored is detected, the test point of selection between soft breakdown point A and hard breakdown point B, as test point E, test point F etc.Detection method can be apply detect voltage and detect its grid leakage current at the grid of groove MOS device to be monitored and body electrode, the magnitude of voltage of described detection voltage is between described soft breakdown point A and the grid voltage of hard breakdown point B, can be positive voltage also can be negative voltage, magnitude of voltage shown in Fig. 4 is absolute value, similar, described positive voltage refers to the voltage of voltage higher than body electrode of grid, and described negative voltage refers to the voltage of voltage lower than body electrode of grid; Or also can be apply detect electric current and detect its grid voltage at the grid of groove MOS device to be measured, the current value of described detection electric current be between described soft breakdown point A and the grid leakage current of hard breakdown point B.Described " between " refer to the grid voltage detecting the magnitude of voltage of voltage and be more than or equal to soft breakdown point A, be less than or equal to the grid voltage of hard breakdown point B, the current value detecting electric current is more than or equal to the grid leakage current of soft breakdown point A, be less than or equal to the grid leakage current of hard breakdown point B, similar, the magnitude of voltage of above-mentioned detection voltage and the current value of detection electric current all refer to absolute value.
In one embodiment, the grid voltage of soft breakdown point A and hard breakdown point B only can be determined in step S21, apply detect voltage and detect its grid leakage current to the grid of this batch of device to be monitored afterwards in step S22, wherein detect voltage between described soft breakdown point A and the grid voltage of hard breakdown point B; In another specific embodiment, the grid leakage current of soft breakdown point A and hard breakdown point B only can be determined in step S21, apply detect electric current and detect its grid voltage to the grid of this batch of device to be monitored afterwards in step S22, wherein detect electric current between described soft breakdown point A and the grid leakage current of hard breakdown point B; In another specific embodiment, grid voltage and the grid leakage current of described soft breakdown point A and hard breakdown point B can be determined in step S21, in step S22, detect grid voltage or the grid leakage current of device to be monitored afterwards, or not only detect the grid voltage of device to be monitored but also detect the grid leakage current of device to be monitored.
Because the test point chosen in the present embodiment is between soft breakdown point and hard breakdown point, grid leakage current is near-linear change more slowly with grid voltage, testing result is comparatively responsive to process shifts, if certain device causes its grid leakage current-gate voltage curve to offset due to process shifts, then its grid leakage current detected or grid voltage can have obvious difference with the device of other non-generating process skews, need this device is rejected or checks the setting of processing parameter, thus improve the effect of process monitoring significantly.The process monitoring method of the present embodiment is applicable to groove MOS device as shown in Figure 1, or the grid of other types is formed at the groove MOS device in groove.
Corresponding to the process monitoring method of above-mentioned groove MOS device, the present invention also provides a kind of process monitoring device of groove MOS device.Fig. 5 shows the structural representation of the process monitoring device of the groove MOS device of the present embodiment, as shown in Figure 5, comprise: soft/hard breakdown point determining unit 31, be suitable for determining the soft breakdown point of this batch of groove MOS device and the grid voltage of hard breakdown point and/or grid leakage current; Detecting unit 32, be suitable for applying detect voltage and detect its grid leakage current to the grid of this batch of groove MOS device to be monitored, the magnitude of voltage of described detection voltage is between described soft breakdown point and the grid voltage of hard breakdown point, or apply detect electric current and detect its grid voltage to the grid of each groove MOS device, the current value of described detection electric current is between described soft breakdown point and the grid leakage current of hard breakdown point.
Wherein, soft/hard breakdown point determining unit 31 comprises: sampling unit 311, is suitable for choosing one or more device as sample from this batch of groove MOS device; Scanning Detction unit 312, is suitable for scanning the grid voltage of the device in described sample and detecting grid leakage current, obtains grid leakage current-gate voltage curve, determines grid voltage and/or the grid leakage current of soft breakdown point and hard breakdown point.Refer to the description of the process monitoring method of groove MOS device in previous embodiment about the course of work of the process monitoring device of this groove MOS device and principle, repeat no more here.
To sum up, the technical program applies detect voltage and detect its grid leakage current to the grid of groove MOS device to be monitored, the magnitude of voltage of described detection voltage is between described soft breakdown point and the grid voltage of hard breakdown point, or apply detect electric current and detect its grid voltage to the grid of each groove MOS device, the current value of described detection electric current is between described soft breakdown point and the grid leakage current of hard breakdown point.The part in grid leakage current-gate voltage curve between soft breakdown point and hard breakdown point is selected in control point by the technical program, because grid leakage current in this part is with grid voltage near-linear change slowly, make testing result more responsive to the process shifts of device, the process drift problem of device can be detected accurately, improve monitoring effect.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection range of technical solution of the present invention.
Claims (6)
1. a process monitoring method for groove MOS device, is characterized in that, comprising:
Determine the soft breakdown point of this batch of groove MOS device and the grid voltage of hard breakdown point and/or grid leakage current;
Apply detect voltage and detect its grid leakage current to the grid of this batch of groove MOS device to be monitored, the magnitude of voltage of described detection voltage is between described soft breakdown point and the grid voltage of hard breakdown point, or apply detect electric current and detect its grid voltage to the grid of each groove MOS device, the current value of described detection electric current is between described soft breakdown point and the grid leakage current of hard breakdown point.
2. the process monitoring method of groove MOS device according to claim 1, is characterized in that, described detection voltage is positive voltage or negative voltage; Described positive voltage refers to the voltage of voltage higher than body electrode of grid, and described negative voltage refers to the voltage of voltage lower than body electrode of grid.
3. the process monitoring method of groove MOS device according to claim 1, is characterized in that, described determine this batch of groove MOS device soft breakdown electricity point and the grid voltage of hard breakdown point and/or grid leakage current comprise:
One or more device is chosen as sample from this batch of groove MOS device;
The grid voltage of the device in described sample scanned and detects grid leakage current, obtaining grid leakage current-gate voltage curve, determine grid voltage and/or the grid leakage current of soft breakdown point and hard breakdown point.
4. a process monitoring device for groove MOS device, is characterized in that, comprising:
Soft/hard breakdown point determining unit, is suitable for determining the soft breakdown point of this batch of groove MOS device and the grid voltage of hard breakdown point and/or grid leakage current;
Detecting unit, be suitable for applying detect voltage and detect its grid leakage current to the grid of this batch of groove MOS device to be monitored, the magnitude of voltage of described detection voltage is between described soft breakdown point and the grid voltage of hard breakdown point, or apply detect electric current and detect its grid voltage to the grid of each groove MOS device, the current value of described detection electric current is between described soft breakdown point and the grid leakage current of hard breakdown point.
5. the process monitoring device of groove MOS device according to claim 4, it is characterized in that, described detection voltage is positive voltage or negative voltage, and described positive voltage refers to the voltage of voltage higher than body electrode of grid, and described negative voltage refers to the voltage of voltage lower than body electrode of grid.
6. the process monitoring device of groove MOS device according to claim 4, is characterized in that, described soft/hard breakdown point determining unit comprises:
Sampling unit, is suitable for choosing one or more device as sample from this batch of groove MOS device;
Scanning Detction unit, is suitable for scanning the grid voltage of the device in described sample and detecting grid leakage current, obtains grid leakage current-gate voltage curve, determines grid voltage and/or the grid leakage current of soft breakdown point and hard breakdown point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110029707.1A CN102157414B (en) | 2011-01-27 | 2011-01-27 | The process monitoring method of groove MOS device and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110029707.1A CN102157414B (en) | 2011-01-27 | 2011-01-27 | The process monitoring method of groove MOS device and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102157414A CN102157414A (en) | 2011-08-17 |
| CN102157414B true CN102157414B (en) | 2016-03-30 |
Family
ID=44438813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110029707.1A Active CN102157414B (en) | 2011-01-27 | 2011-01-27 | The process monitoring method of groove MOS device and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102157414B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104617019B (en) * | 2015-02-04 | 2017-06-27 | 桂林电子科技大学 | A kind of GaAs substrates MHEMT grid recess corrosion monitoring process |
| CN113097085A (en) * | 2021-03-19 | 2021-07-09 | 长江存储科技有限责任公司 | Test structure and test method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1497736A (en) * | 2002-09-27 | 2004-05-19 | 株式会社东芝 | Semiconductor device and its manufacturing method |
| CN101419270A (en) * | 2008-12-03 | 2009-04-29 | 佛山市蓝箭电子有限公司 | Method for testing BVceo soft breakdown of semiconductor triode |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6700151B2 (en) * | 2001-10-17 | 2004-03-02 | Kilopass Technologies, Inc. | Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric |
| JP5113331B2 (en) * | 2005-12-16 | 2013-01-09 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
| KR101385251B1 (en) * | 2008-04-02 | 2014-04-17 | 삼성전자주식회사 | Multi-level antifuse and method for operation the same |
-
2011
- 2011-01-27 CN CN201110029707.1A patent/CN102157414B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1497736A (en) * | 2002-09-27 | 2004-05-19 | 株式会社东芝 | Semiconductor device and its manufacturing method |
| CN101419270A (en) * | 2008-12-03 | 2009-04-29 | 佛山市蓝箭电子有限公司 | Method for testing BVceo soft breakdown of semiconductor triode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102157414A (en) | 2011-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104205334A (en) | Semiconductor device | |
| CN103730501B (en) | The superjunction FET that dielectric terminates | |
| CN100492642C (en) | Production method of metal-oxide-semiconductor field effect transistor protection circuit | |
| Moens et al. | UltiMOS: A local charge-balanced trench-based 600V super-junction device | |
| CN103117302A (en) | Back structure of FS type IGBT(Insulated Gate Bipolar Transistor)device | |
| CN106409884A (en) | Power semiconductor device terminal structure | |
| CN102157414B (en) | The process monitoring method of groove MOS device and device | |
| CN107045995B (en) | Evaluation method and method for manufacturing semiconductor device | |
| US20200381510A1 (en) | Mosfet and power conversion circuit | |
| CN106252385A (en) | Semiconductor structure | |
| CN103022123B (en) | Super junction-semiconductor device and manufacture method thereof | |
| CN105590958B (en) | Lateral insulated gate bipolar device of double trench high-pressure shieldings and preparation method thereof | |
| CN105122451A (en) | Method for driving semiconductor device | |
| CN114210605B (en) | Silicon carbide power semiconductor device testing method | |
| CN106328688A (en) | Structure and manufacturing method of terminal voltage-division region for super-junction device | |
| Hossain | Determination of manufacturing RESURF process window for a robust 700V double RESURF LDMOS transistor | |
| JP6651966B2 (en) | Evaluation method and method of manufacturing semiconductor device | |
| KR101685572B1 (en) | SiC MOSFET for decreasing electric field of bottom oxide and method for manufacturing thereof | |
| CN209981209U (en) | Semiconductor structure | |
| CN103943608A (en) | Test structure for detecting polycrystalline silicon residual | |
| Lynch et al. | Demonstration of High Voltage (15kV) Split-Gate 4H-SiC MOSFETs | |
| CN104638004A (en) | Super-junction MOSFET (metal-oxide-semiconductor field-effect transistor) device structure | |
| CN102306644B (en) | The test structure of SOI type MOS transistor and formation method | |
| CN109341880A (en) | A kind of annulus temperature sensor | |
| CN103904000A (en) | Method for testing polycrystalline silicon bottom bridging defect through capacitor contrast test structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140403 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20140403 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |