CN102154710B - Monocrystal silicon wafer flocking process liquid and preparation method thereof - Google Patents
Monocrystal silicon wafer flocking process liquid and preparation method thereof Download PDFInfo
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- CN102154710B CN102154710B CN 201010580416 CN201010580416A CN102154710B CN 102154710 B CN102154710 B CN 102154710B CN 201010580416 CN201010580416 CN 201010580416 CN 201010580416 A CN201010580416 A CN 201010580416A CN 102154710 B CN102154710 B CN 102154710B
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Abstract
The invention discloses monocrystal silicon wafer flocking process liquid and a preparation method thereof. The monocrystal silicon wafer flocking process liquid contains the following raw materials in parts by weight: 62-86 parts of industrial pure water, 5-15 parts of electronic-grade potassium hydroxide, 5-15 parts of CP-grade high-radix loop materials and 4-8 parts of electronic-grade sodium silicate. The preparation method of the monocrystal silicon wafer flocking process comprises the following steps: adding 10-30 parts of industrial pure water and 5-15 parts of electronic-grade potassium hydroxide or sodium hydroxide or the mixture of the two into a reactor, stirring and dissolving; adding 5-15 parts of CP-grade high-radix loop materials, stirring and dissolving; adding 4-8 parts of electronic-grade sodium silicate or potassium silicate or the mixture of the two, stirring and dissolving; adding 32-76 parts of hot pure water of 50-80 DEG C, stirring; and naturally cooling and packaging. The monocrystal silicon wafer flocking process liquid adopted the technical scheme has the advantages of removing monocrystal silicon wafer piebald, improving conversion efficiency of batteryplates, lowering production cost of flocking surface and improving quality stability of the flocking surface.
Description
Technical field
The present invention relates to a kind of monocrystalline silicon piece flocking technique liquid and preparation method thereof.
Background technology
It is polycrystalline and monocrystalline solar cells that world today's silica-based solar cell can be divided into two big camps by the material differentiation.The matte processing procedure is the first road technology in the solar cell processing procedure, also is very crucial together manufacturing process.Generally speaking the reflectivity for the silica-base material of solar cell is 30-35%, and meaning i.e. 100% solar energy projects silicon substrate surface, and the solar energy of the 30-35% that has an appointment is reflected, and can not effectively utilize the energy of this part sunlight.The main effect of matte technology is minimum with regard to being that reflectivity with silica-base material drops to, in the hope of the energy that utilizes sunlight to provide to us of maximum range.Matte technology can be divided into sour processing procedure and alkali processing procedure by silica-base material at present.For the silicon single crystal silica-base material; traditional matte technology of main flow is the alkali processing procedure; its content is: the aqueous solution that utilizes the potassium hydroxide of high density or sodium hydroxide 20% earlier removes because the cutting vestige that stays in the cutting process or be called affected layer; generally need to remove the silicon materials of 5-10 μ m left and right thickness, and then utilize the mixed aqueous solution of potassium hydroxide or sodium hydroxide, b propanol and water glass to form observable intensive pyramid under microcosmic in etching under 80 ℃ the temperature.Its reflectivity will be down to about 14%.But the greatest drawback of traditional alkali matte processing procedure is: because a large amount of b propanol that uses; and its lower boiling and volatile chemical property have caused the instability between matte processing procedure batch; a large amount of piebald sheets appears in Shi Changhui, and has a strong impact on outward appearance and the generating efficiency of battery sheet.At present, solar battery sheet industry matte piebald can be controlled in about 2% in some big factories, but for those little factories or technology not mature enough producer still, the piebald rate is generally at 5-10%.
Summary of the invention
Goal of the invention: the objective of the invention is at the deficiencies in the prior art, a kind of monocrystalline silicon piece flocking technique liquid is provided, the generation that this monocrystalline silicon piece flocking technique liquid can guarantee the flocking effect unity of each batch monocrystalline silicon piece battery and can reduce the matte piebald improves the efficient of the switching energy of battery sheet, and another object of the present invention thing provides a kind of method for preparing described monocrystalline silicon piece flocking technique liquid.
Technical scheme: in order to realize the foregoing invention purpose, the technical solution used in the present invention is:
A kind of monocrystalline silicon piece flocking technique liquid comprises that following raw materials in weight portion constitutes: 62～86 parts of industrial pure waters; 5～15 parts in the potassium hydroxide of electronic-grade, sodium hydroxide or the mixture of the two; 5～15 parts of the high basic ring class materials of CP level; 4～8 parts in the water glass of electronic-grade, potassium silicate or the mixture of the two.
The high basic ring class material of described CP level is butyric acid, acetic acid, valeric acid or enanthic acid.
A kind of method for preparing monocrystalline silicon piece flocking technique liquid may further comprise the steps:
(1) 10～30 parts industrial pure water and potassium hydroxide, sodium hydroxide or the mixture of the two of 5～15 parts of electronic-grades are added in the reactor, 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution being remained on 50 ℃～80 ℃, churning time was controlled at 15～30 minutes;
(2) treat that potassium hydroxide or sodium hydroxide dissolve fully after, the high basic ring class material that adds the CP level in 5～15 parts ratios by amount, 800-3000r/min stir to promote its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, and churning time was controlled at 30～60 minutes;
(3) add water glass, potassium silicate or the mixture of the two of electronic-grade in 4～8 parts ratio, 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, and churning time was controlled at 30～60 minutes;
(4) add 32～76 parts 50 ℃～80 ℃ hot pure water at last, 800-2500r/min stirs, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃ churning time controls at 30～60 minutes;
(5) after naturally cooling to below 30 ℃, packing.
The high basic ring class material of described step (2) CP level is butyric acid, acetic acid, valeric acid or enanthic acid.
Beneficial effect: the present invention compared with prior art, its beneficial effect is:
1, substitutes volatile b propanol by high basic ring class, reach when eliminating piebald and improve battery sheet efficiency of conversion;
2, reduced the priming cost that matte is produced;
3, traditional matte technology having relatively high expectations to equipment, the matte groove need be equipped with bubbling or groove internal circulation apparatus, and it is high to the stability requirement of these supplementary units, adopt flocking liquid of the present invention less demanding to equipment, reach need not be any supplementary unit just can reach good matte effect, and the steady quality degree of matte is improved;
4, before traditional matte technology, need go affected layer technology, carry out matte technology then, silicon chip will be thinned about 30 μ m after the two road technologies, and adopt flocking liquid of the present invention to control within 20 μ m in wafer thinning amount behind the matte processing procedure, namely solve the puzzlement that the fragmentation rate in the technological process promotes after the silica-based film source thinning, improved the battery bending tablet degree under the thin slice condition again;
5, adopt the waste liquid generation of monocrystalline silicon piece flocking liquid of the present invention in the flocking process only be equivalent to traditional matte processing procedure waste liquid 1/8th, greatly reduce the treatment capacity of process waste liquor, thereby saved human and material resources and environmental protection that manufacturer disposes waste liquid.
Embodiment
Below by embodiment, technical solution of the present invention is elaborated, but protection scope of the present invention is not limited to described embodiment.
Specific embodiment 1:
A kind of monocrystalline silicon piece flocking technique liquid comprises that following raw materials in weight portion constitutes: 62 parts of industrial pure waters; 5 parts in the potassium hydroxide of electronic-grade; 5 parts of butyric acid; 4 parts of the water glass of electronic-grade.
The preparation method is:
(1) potassium hydroxide with 10 parts industrial pure water and 5 parts of electronic-grades adds in the reactor, and 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, and churning time was controlled at 15～30 minutes;
(2) treat that potassium hydroxide dissolves fully after, add butyric acid in 5 parts ratios by amount, 800-3000r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, churning time was controlled at 30～60 minutes;
(3) add the water glass of electronic-grade in 4 parts ratio, 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, and churning time was controlled at 30～60 minutes;
(4) add 52 parts 50 ℃～80 ℃ hot pure water at last, 800-2500r/min stirs, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃ churning time controls at 30～60 minutes;
(5) after naturally cooling to below 30 ℃, packing.
Specific embodiment 2:
A kind of monocrystalline silicon piece flocking technique liquid comprises that following raw materials in weight portion constitutes: 86 parts of industrial pure waters; 15 parts in the potassium hydroxide of electronic-grade; 15 parts of acetic acid; 8 parts of the water glass of electronic-grade.
The preparation method is:
(1) potassium hydroxide with 30 parts industrial pure water and 15 parts of electronic-grades adds in the reactor, and 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, and churning time was controlled at 15～30 minutes;
(2) treat that potassium hydroxide dissolves fully after, add acetic acid in 15 parts ratios by amount, 800-3000r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, churning time was controlled at 30～60 minutes;
(3) add the water glass of electronic-grade in 8 parts ratio, 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, and churning time was controlled at 30～60 minutes;
(4) add 56 parts 50 ℃～80 ℃ hot pure water at last, 800-2500r/min stirs, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃ churning time controls at 30～60 minutes;
(5) after naturally cooling to below 30 ℃, packing.
Specific embodiment 3:
A kind of monocrystalline silicon piece flocking technique liquid comprises that following raw materials in weight portion constitutes: 74 parts of industrial pure waters; 10 parts in the potassium hydroxide of electronic-grade; 10 parts of valeric acids; 6 parts of the water glass of electronic-grade.
The preparation method is:
(1) potassium hydroxide with 20 parts industrial pure water and 10 parts of electronic-grades adds in the reactor, and 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, and churning time was controlled at 15～30 minutes;
(2) treat that potassium hydroxide dissolves fully after, add valeric acid in 10 parts ratios by amount, 800-3000r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, churning time was controlled at 30～60 minutes;
(3) add the water glass of electronic-grade in 6 parts ratio, 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, and churning time was controlled at 30～60 minutes;
(4) add 54 parts 50 ℃～80 ℃ hot pure water at last, 800-2500r/min stirs, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃ churning time controls at 30～60 minutes;
(5) after naturally cooling to below 30 ℃, packing.
Specific embodiment 4:
A kind of monocrystalline silicon piece flocking technique liquid comprises that following raw materials in weight portion constitutes: 86 parts of industrial pure waters; 15 parts in the sodium hydroxide of electronic-grade; 15 parts of enanthic acid; 8 parts of the potassium silicates of electronic-grade.
The preparation method is:
(1) sodium hydroxide with 30 parts industrial pure water and 15 parts of electronic-grades adds in the reactor, and 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, and churning time was controlled at 15～30 minutes;
(2) treat that sodium hydroxide dissolves fully after, add enanthic acid in 15 parts ratios by amount, 800-3000r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, churning time was controlled at 30～60 minutes;
(3) add the potassium silicate of electronic-grade in 8 parts ratio, 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, and churning time was controlled at 30～60 minutes;
(4) add 56 parts 50 ℃～80 ℃ hot pure water at last, 800-2500r/min stirs, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃ churning time controls at 30～60 minutes;
(5) after naturally cooling to below 30 ℃, packing.
Specific embodiment 5:
A kind of monocrystalline silicon piece flocking technique liquid comprises that following raw materials in weight portion constitutes: 62 parts of industrial pure waters; 5 parts in the sodium hydroxide of electronic-grade; 5 parts of butyric acid; 4 parts of the potassium silicates of electronic-grade.
The preparation method is:
(1) sodium hydroxide with 10 parts industrial pure water and 5 parts of electronic-grades adds in the reactor, and 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, and churning time was controlled at 15～30 minutes;
(2) treat that sodium hydroxide dissolves fully after, add butyric acid in 5 parts ratios by amount, 800-3000r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, churning time was controlled at 30～60 minutes;
(3) add the potassium silicate of electronic-grade in 4 parts ratio, 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, and churning time was controlled at 30～60 minutes;
(4) add 52 parts 50 ℃～80 ℃ hot pure water at last, 800-2500r/min stirs, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃ churning time controls at 30～60 minutes;
(5) after naturally cooling to below 30 ℃, packing.
Specific embodiment 6:
A kind of monocrystalline silicon piece flocking technique liquid comprises that following raw materials in weight portion constitutes: 74 parts of industrial pure waters; 15 parts in the sodium hydroxide of electronic-grade and potassium hydroxide mixture; 15 parts of acetic acid; 6 parts of the potassium silicate of electronic-grade and sodium silicate mixtures.
The preparation method is:
(1) 20 parts industrial pure water and sodium hydroxide and the potassium hydroxide mixture of 15 parts of electronic-grades are added in the reactor, 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution being remained on 50 ℃～80 ℃, churning time was controlled at 15～30 minutes;
(2) treat that sodium hydroxide dissolves fully after, add acetic acid in 15 parts ratios by amount, 800-3000r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, churning time was controlled at 30～60 minutes;
(3) add potassium silicate and the sodium silicate mixture of electronic-grade in 6 parts ratio, 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃, and churning time was controlled at 30～60 minutes;
(4) add 54 parts 50 ℃～80 ℃ hot pure water at last, 800-2500r/min stirs, and by the heating spacer temperature of solution is remained on 50 ℃～80 ℃ churning time controls at 30～60 minutes;
(5) after naturally cooling to below 30 ℃, packing.
The synopsis of monocrystalline silicon piece flocking technique liquid of the present invention and traditional flocking technique liquid:
| Technical parameter | Flocking liquid of the present invention | Tradition flocking liquid |
| Reflectivity | ≤14％ | 14-15％ |
| Flower sheet rate | 0％ | 2-5％ |
| Technology stability control | In addition | Difficult |
| Process time | ≤20min | 30min |
| Operability | Simply | Complicated |
| Requirement to equipment | Low | High |
| Index of aging | 100 gram silicon etching amount/kg | 12 gram silicon etching amount/kg |
| Cost | 0.11 1 in unit | 0.12-0.13 unit/sheet |
| Adaptability to height side's rent | By force | A little less than |
| Processing wastewater | Be equivalent to 1/8 of traditional technology | Amount is many |
| Adaptability to film source | By force | Difference |
Claims (2)
1. method for preparing monocrystalline silicon piece flocking technique liquid, described monocrystalline silicon piece flocking technique liquid comprises following raw materials in weight portion:
62～86 parts of industrial pure waters;
5～15 parts in the potassium hydroxide of electronic-grade, sodium hydroxide or the mixture of the two;
5～15 parts of butyric acid, acetic acid, valeric acid or enanthic acid;
4～8 parts in the water glass of electronic-grade, potassium silicate or the mixture of the two; It is characterized in that may further comprise the steps:
(1) 10～30 parts industrial pure water and potassium hydroxide, sodium hydroxide or the mixture of the two of 5～15 parts of electronic-grades are added in the reactor, 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution being remained on 50 ℃-80 ℃, churning time was controlled at 15-30 minute;
(2) treat that potassium hydroxide and/or sodium hydroxide dissolve fully after, the high basic ring class material that adds the CP level in 5～15 parts ratios by amount, 800-3000r/min stir to promote its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃-80 ℃, and churning time was controlled at 30-60 minute;
(3) add water glass, potassium silicate or the mixture of the two of electronic-grade in 4～8 parts ratio, 800-2500r/min stirs and promotes its dissolving, and by the heating spacer temperature of solution is remained on 50 ℃-80 ℃, and churning time was controlled at 30-60 minute;
(4) add 50 ℃ ~ 80 ℃ industrial pure water of residual content at last, 800-2500r/min stirs, and by the heating spacer temperature of solution is remained on 50 ℃-80 ℃, and churning time was controlled at 30-60 minute;
(5) after naturally cooling to below 30 ℃, packing.
2. a kind of method for preparing monocrystalline silicon piece flocking technique liquid according to claim 1, it is characterized in that: the high basic ring class material of described step (2) CP level is butyric acid, acetic acid, valeric acid or enanthic acid.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101122026A (en) * | 2007-04-26 | 2008-02-13 | 马林克罗特贝克公司 | Polysilicon planarization solution for planarizing low temperature polysilicon film panel |
| CN101158052A (en) * | 2006-09-07 | 2008-04-09 | 硅电子股份公司 | Alkaline etching solution for semiconductor wafer and alkaline etching method |
| CN101570897A (en) * | 2009-06-03 | 2009-11-04 | 中国科学院电工研究所 | Corrosive liquid used for monocrystal line silicon matte preparation and monocrystal line silicon matte preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101818378B (en) * | 2010-04-26 | 2011-11-09 | 韩华新能源（启东）有限公司 | Velvet manufacturing solution of monocrystalline silicon additive |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101158052A (en) * | 2006-09-07 | 2008-04-09 | 硅电子股份公司 | Alkaline etching solution for semiconductor wafer and alkaline etching method |
| CN101122026A (en) * | 2007-04-26 | 2008-02-13 | 马林克罗特贝克公司 | Polysilicon planarization solution for planarizing low temperature polysilicon film panel |
| CN101570897A (en) * | 2009-06-03 | 2009-11-04 | 中国科学院电工研究所 | Corrosive liquid used for monocrystal line silicon matte preparation and monocrystal line silicon matte preparation method |
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