CN101818378B - Velvet manufacturing solution of monocrystalline silicon additive - Google Patents
Velvet manufacturing solution of monocrystalline silicon additive Download PDFInfo
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- CN101818378B CN101818378B CN2010101612878A CN201010161287A CN101818378B CN 101818378 B CN101818378 B CN 101818378B CN 2010101612878 A CN2010101612878 A CN 2010101612878A CN 201010161287 A CN201010161287 A CN 201010161287A CN 101818378 B CN101818378 B CN 101818378B
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- salt
- acid
- monocrystalline silicon
- active agent
- velvet
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 18
- 239000000654 additive Substances 0.000 title claims abstract description 12
- 230000000996 additive effect Effects 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 150000003839 salts Chemical class 0.000 claims abstract description 15
- 150000007524 organic acids Chemical class 0.000 claims abstract description 13
- 230000007797 corrosion Effects 0.000 claims description 26
- 238000005260 corrosion Methods 0.000 claims description 26
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- 239000013543 active substance Substances 0.000 claims description 12
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 7
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 claims description 6
- 235000019353 potassium silicate Nutrition 0.000 claims description 6
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 150000002632 lipids Chemical class 0.000 claims description 3
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 3
- 235000015320 potassium carbonate Nutrition 0.000 claims description 3
- 239000000344 soap Substances 0.000 claims description 3
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims description 3
- 235000010234 sodium benzoate Nutrition 0.000 claims description 3
- 235000017550 sodium carbonate Nutrition 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 3
- 239000001488 sodium phosphate Substances 0.000 claims description 3
- 229910000162 sodium phosphate Inorganic materials 0.000 claims description 3
- 235000011008 sodium phosphates Nutrition 0.000 claims description 3
- 229940095064 tartrate Drugs 0.000 claims description 3
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 3
- 229940005605 valeric acid Drugs 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 2
- 239000004299 sodium benzoate Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 10
- 239000004094 surface-active agent Substances 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000000243 solution Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000003637 basic solution Substances 0.000 description 2
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Chemical compound [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 240000004859 Gamochaeta purpurea Species 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- 229910017906 NH3H2O Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 108010009736 Protein Hydrolysates Proteins 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- HQPMKSGTIOYHJT-UHFFFAOYSA-N ethane-1,2-diol;propane-1,2-diol Chemical compound OCCO.CC(O)CO HQPMKSGTIOYHJT-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 229920001993 poloxamer 188 Polymers 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- -1 silicic acid hydrogen salt Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
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Abstract
The invention discloses a velvet manufacturing solution of a monocrystalline silicon additive, which comprises an alkaline etching solution, a surface active agent and organic acid or salt, wherein the mass of the surface active agent is 0.05% to 0.5% of the mass or volume of the alkaline etching solution, and the mass of the organic acid or salt is 0.1% to 10.0% of the mass or volume of the alkaline etching solution. The velvet manufacturing solution enables the pyramid size of a velvet surface of monocrystalline silicon to be uniform without blaze or obvious impression. Under a proper temperature condition, the velvet surface is quickly and effectively formed and is matched with traditional production equipment.
Description
Technical field:
The present invention relates to a kind of velvet manufacturing solution of monocrystalline silicon additive.
Background technology:
In silicon single crystal alkaline corrosion making herbs into wool process, the main ingredient of typical basic solution is sodium hydroxide (NaOH), water glass (Na
2SiO
3) or Virahol (IPA) and H
2O.Under higher temperature, following corrosion reaction can take place in the silicon single crystal in the alkaline aqueous solution:
Si+6OH
-——SiO
3 2-+3H
2O+4e
4H
++4e——2H
2↑
Total reaction equation is:
Si+2OH
-+H
2O＝SiO
3 2-+2H
2↑
Because the silicon crystal not Siliciumatom arrangement pitches of isomorphous picture has differently, so the corrosion speed of alkaline solution is also inequality.In general, similar with the corrosion speed of [111] direction when alkaline concentration and temperature are higher in [100] of silicon single crystal, be usually used in removing the mechanical damage layer of silicon face.When alkaline concentration was low, the corrosion speed difference on above-mentioned two crystal faces was more obvious, and velocity ratio is called as " anisotropy factor ".Therefore, by changing the concentration and the temperature of alkaline solution, can change the anisotropic factor effectively, make in the corrosion speed of [100] direction very fast, and slower, thereby form the antireflective matte of " pyramid " structure of dense distribution at silicon chip surface in the corrosion speed of [111] direction.
Water glass (Na
2SiO
3) hydrolysis reaction below in water, existing:
Na
2SiO
3+2H
2O＝NaH
3SiO
4+NaOH
2NaH
3SiO
4＝Na
2H
4Si
2O
7+H
2O
Therefore sodium silicate aqueous solution has stronger alkalescence, repeatedly include silicic acid in the hydrolysate, multiple silicate and silicic acid hydrogen salt, wherein there are a large amount of polarity and non-polar group, can effectively reduce the surface tension of solution and improve the wetting effect of monocrystalline silicon sheet surface, this and the effect of IPA in caustic corrosion liquid are similar.But because IPA price height, and evaporation rate is very fast, and therefore, current a lot of research groups all a kind ofly neither need add IPA seeking, and can realize the even matte technology of preparing of silicon single crystal of industrial applications again.
About the used etching reagent of Silicon Crystal Anisotropic Etching, all known solution all are alkaline at present, generally can be divided into two classes: a class is organic etching reagent, comprises EPW (quadrol, phthalic acid and water), TMAH (Tetramethylammonium hydroxide) etc.; Another kind of is inorganic etching reagent, comprises basic solution, and as KOH, NaOH, LiOH, CsOH and NH3H2O etc., this two classes etching reagent has very similarly corrosion phenomenon.In order to obtain silicon corrosive anisotropy and corrosion surface satisfied under certain condition, being everlasting wherein adds additive, as IPA, and dehydrated alcohol, hypochlorite reaches (NH4)
2S
2O
4Deng.
It is generally acknowledged that reaction originates in surface of crystalline silicon defect and impurity place, and less through the monocrystalline silicon sheet surface defect and impurity of past affected layer, be difficult to explain the even covering surfaces of matte of making.Na
2SiO
3Nonpolar functional group in the solution is easy to be adsorbed on monocrystalline silicon surface, hinders OH
-The corrosion reaction of ion pair Si provides the starting point of " pyramid " structure matte nucleation.Starting point is many more even more, and then the pyramid size after the corrosion is even more, and is easy to control, and the improvement of battery performance is had very big effect.But constantly produce water glass in the reaction process, and work as SiO in the corrosive fluid
3 2-During too high levels, alkaline etching is difficult to form ideal antireflective matte at monocrystalline silicon surface.
Summary of the invention:
The object of the present invention is to provide a kind of monocrystalline silicon piece texture " pyramid " size that makes even, and do not have hickie and do not have obvious impression, the velvet manufacturing solution of monocrystalline silicon additive that can effectively form matte fast and mate with existing equipment.
Technical solution of the present invention is:
A kind of velvet manufacturing solution of monocrystalline silicon additive, it is characterized in that: form by alkaline corrosion liquid and tensio-active agent and organic acid or salt, wherein the amount of tensio-active agent is equivalent to 0.05～0.5% of alkaline corrosion liquid quality or volume, and the amount of organic acid or salt is equivalent to 0.1～10.0% of alkaline corrosion liquid quality or volume.
The corrosive fluid that described alkaline corrosion liquid is made up of one or more and water of sodium hydroxide, potassium hydroxide, yellow soda ash, salt of wormwood, water glass, sodium phosphate.
The mass percent of alkali or salt is 0.2%～5% in the alkaline corrosion liquid.
The Woolen-making liquid temperature is 60～75 ℃.
Organic acid or salt are to contain the lipid acid of 4～10 carbon or contain the soap of 4～10 carbon and one or more of phenylfatty acid; Tensio-active agent is one or more of alkylphenol type tensio-active agent or EOPOEO type segmented copolymer.
Organic acid or salt are: butyric acid, valeric acid, enanthic acid, tartrate or Sodium Benzoate.
The present invention makes monocrystalline silicon piece texture " pyramid " size even, and does not have hickie and do not have obvious impression, under suitable temperature condition, forms fast effectively matte and mates with existing equipment.The present invention makes increases " nucleation " starting point in the solution, matte " pyramid " can evenly be grown at silicon chip surface, and dense arrangement.Also contain certain amount of surfactant in the additive, play the surface tension that reduces water, the effective wetting silicon chip surface reduces the piebald phenomenon, make making herbs into wool after silicon chip surface totally even.Because the matte pyramid is more even, therefore controllable size under resistance raising of diffusion side and sintering temperature condition with higher, can effectively reduce battery drain.Power output to assembly has very high value.
The invention will be further described below in conjunction with drawings and Examples.
Fig. 1 is the monocrystalline silicon suede photo of handling through the present invention.
Embodiment:
A kind of velvet manufacturing solution of monocrystalline silicon additive, form by alkaline corrosion liquid and tensio-active agent and organic acid or salt, wherein the amount of tensio-active agent is equivalent to 0.05～0.5% (example 0.05%, 0.2%, 0.5%) of alkaline corrosion liquid quality or volume, and the amount of organic acid or salt is equivalent to 0.1～10.0% (example 0.1%, 5%, 10%) of alkaline corrosion liquid quality or volume.The corrosive fluid that described alkaline corrosion liquid is made up of sodium hydroxide of 0.2%～5% (example 0.2%, 2%, 5%) mass percent (or potassium hydroxide, yellow soda ash, salt of wormwood, water glass or sodium phosphate one or more) and water.
Organic acid or salt are to contain the lipid acid of 4～10 carbon or contain the soap of 4～10 carbon and one or more (routine butyric acid, valeric acid, enanthic acid, tartrate or Sodium Benzoates) of phenylfatty acid; Tensio-active agent is one or more (routine Pluronic F68, P105 etc.) of alkylphenol type tensio-active agent or EOPOEO type segmented copolymer.
During use, keeping the temperature of Woolen-making liquid is 60～75 ℃, etching time 10～25 minutes.About 4～5 μ m of silicon chip thinning single surface amount.
Claims (3)
1. velvet manufacturing solution of monocrystalline silicon additive, it is characterized in that: form by alkaline corrosion liquid and tensio-active agent and organic acid or salt, wherein the amount of tensio-active agent is equivalent to 0.05～0.5% of alkaline corrosion liquid quality or volume, and the amount of organic acid or salt is equivalent to 0.1～10.0% of alkaline corrosion liquid quality or volume; The corrosive fluid that described alkaline corrosion liquid is made up of one or more and water of sodium hydroxide, potassium hydroxide, yellow soda ash, salt of wormwood, water glass, sodium phosphate, the mass percent of alkali or salt is 0.2%～5% in the alkaline corrosion liquid; Organic acid or salt are to contain the lipid acid of 4～10 carbon or contain the soap of 4～10 carbon and one or more of phenylfatty acid; Tensio-active agent is one or more of alkylphenol type tensio-active agent or EOPOEO type segmented copolymer.
2. velvet manufacturing solution of monocrystalline silicon additive according to claim 1 is characterized in that: the Woolen-making liquid temperature is 60～75 ℃.
3. velvet manufacturing solution of monocrystalline silicon additive according to claim 1 is characterized in that: organic acid or salt are: butyric acid, valeric acid, enanthic acid, tartrate or Sodium Benzoate.
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|---|---|---|---|
| CN2010101612878A CN101818378B (en) | 2010-04-26 | 2010-04-26 | Velvet manufacturing solution of monocrystalline silicon additive |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101612878A CN101818378B (en) | 2010-04-26 | 2010-04-26 | Velvet manufacturing solution of monocrystalline silicon additive |
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| Publication Number | Publication Date |
|---|---|
| CN101818378A CN101818378A (en) | 2010-09-01 |
| CN101818378B true CN101818378B (en) | 2011-11-09 |
Family
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|---|---|---|---|
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| CN101818378A (en) | 2010-09-01 |
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