CN101818378B - Velvet manufacturing solution of monocrystalline silicon additive - Google Patents
Velvet manufacturing solution of monocrystalline silicon additive Download PDFInfo
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- CN101818378B CN101818378B CN2010101612878A CN201010161287A CN101818378B CN 101818378 B CN101818378 B CN 101818378B CN 2010101612878 A CN2010101612878 A CN 2010101612878A CN 201010161287 A CN201010161287 A CN 201010161287A CN 101818378 B CN101818378 B CN 101818378B
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- monocrystalline silicon
- active agent
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Abstract
The invention discloses a velvet manufacturing solution of a monocrystalline silicon additive, which comprises an alkaline etching solution, a surface active agent and organic acid or salt, wherein the mass of the surface active agent is 0.05% to 0.5% of the mass or volume of the alkaline etching solution, and the mass of the organic acid or salt is 0.1% to 10.0% of the mass or volume of the alkaline etching solution. The velvet manufacturing solution enables the pyramid size of a velvet surface of monocrystalline silicon to be uniform without blaze or obvious impression. Under a proper temperature condition, the velvet surface is quickly and effectively formed and is matched with traditional production equipment.
Description
Technical field:
The present invention relates to a kind of velvet manufacturing solution of monocrystalline silicon additive.
Background technology:
In silicon single crystal alkaline corrosion making herbs into wool process, the main ingredient of typical basic solution is sodium hydroxide (NaOH), water glass (Na
2SiO
3) or Virahol (IPA) and H
2O.Under higher temperature, following corrosion reaction can take place in the silicon single crystal in the alkaline aqueous solution:
Si+6OH
-——SiO
3 2-+3H
2O+4e
4H
++4e——2H
2↑
Total reaction equation is:
Si+2OH
-+H
2O＝SiO
3 2-+2H
2↑
Because the silicon crystal not Siliciumatom arrangement pitches of isomorphous picture has differently, so the corrosion speed of alkaline solution is also inequality.In general, similar with the corrosion speed of [111] direction when alkaline concentration and temperature are higher in [100] of silicon single crystal, be usually used in removing the mechanical damage layer of silicon face.When alkaline concentration was low, the corrosion speed difference on above-mentioned two crystal faces was more obvious, and velocity ratio is called as " anisotropy factor ".Therefore, by changing the concentration and the temperature of alkaline solution, can change the anisotropic factor effectively, make in the corrosion speed of [100] direction very fast, and slower, thereby form the antireflective matte of " pyramid " structure of dense distribution at silicon chip surface in the corrosion speed of [111] direction.
Water glass (Na
2SiO
3) hydrolysis reaction below in water, existing:
Na
2SiO
3+2H
2O＝NaH
3SiO
4+NaOH
2NaH
3SiO
4＝Na
2H
4Si
2O
7+H
2O
Therefore sodium silicate aqueous solution has stronger alkalescence, repeatedly include silicic acid in the hydrolysate, multiple silicate and silicic acid hydrogen salt, wherein there are a large amount of polarity and non-polar group, can effectively reduce the surface tension of solution and improve the wetting effect of monocrystalline silicon sheet surface, this and the effect of IPA in caustic corrosion liquid are similar.But because IPA price height, and evaporation rate is very fast, and therefore, current a lot of research groups all a kind ofly neither need add IPA seeking, and can realize the even matte technology of preparing of silicon single crystal of industrial applications again.
About the used etching reagent of Silicon Crystal Anisotropic Etching, all known solution all are alkaline at present, generally can be divided into two classes: a class is organic etching reagent, comprises EPW (quadrol, phthalic acid and water), TMAH (Tetramethylammonium hydroxide) etc.; Another kind of is inorganic etching reagent, comprises basic solution, and as KOH, NaOH, LiOH, CsOH and NH3H2O etc., this two classes etching reagent has very similarly corrosion phenomenon.In order to obtain silicon corrosive anisotropy and corrosion surface satisfied under certain condition, being everlasting wherein adds additive, as IPA, and dehydrated alcohol, hypochlorite reaches (NH4)
2S
2O
4Deng.
It is generally acknowledged that reaction originates in surface of crystalline silicon defect and impurity place, and less through the monocrystalline silicon sheet surface defect and impurity of past affected layer, be difficult to explain the even covering surfaces of matte of making.Na
2SiO
3Nonpolar functional group in the solution is easy to be adsorbed on monocrystalline silicon surface, hinders OH
-The corrosion reaction of ion pair Si provides the starting point of " pyramid " structure matte nucleation.Starting point is many more even more, and then the pyramid size after the corrosion is even more, and is easy to control, and the improvement of battery performance is had very big effect.But constantly produce water glass in the reaction process, and work as SiO in the corrosive fluid
3 2-During too high levels, alkaline etching is difficult to form ideal antireflective matte at monocrystalline silicon surface.
Summary of the invention:
The object of the present invention is to provide a kind of monocrystalline silicon piece texture " pyramid " size that makes even, and do not have hickie and do not have obvious impression, the velvet manufacturing solution of monocrystalline silicon additive that can effectively form matte fast and mate with existing equipment.
Technical solution of the present invention is:
A kind of velvet manufacturing solution of monocrystalline silicon additive, it is characterized in that: form by alkaline corrosion liquid and tensio-active agent and organic acid or salt, wherein the amount of tensio-active agent is equivalent to 0.05～0.5% of alkaline corrosion liquid quality or volume, and the amount of organic acid or salt is equivalent to 0.1～10.0% of alkaline corrosion liquid quality or volume.
The corrosive fluid that described alkaline corrosion liquid is made up of one or more and water of sodium hydroxide, potassium hydroxide, yellow soda ash, salt of wormwood, water glass, sodium phosphate.
The mass percent of alkali or salt is 0.2%～5% in the alkaline corrosion liquid.
The Woolen-making liquid temperature is 60～75 ℃.
Organic acid or salt are to contain the lipid acid of 4～10 carbon or contain the soap of 4～10 carbon and one or more of phenylfatty acid; Tensio-active agent is one or more of alkylphenol type tensio-active agent or EOPOEO type segmented copolymer.
Organic acid or salt are: butyric acid, valeric acid, enanthic acid, tartrate or Sodium Benzoate.
The present invention makes monocrystalline silicon piece texture " pyramid " size even, and does not have hickie and do not have obvious impression, under suitable temperature condition, forms fast effectively matte and mates with existing equipment.The present invention makes increases " nucleation " starting point in the solution, matte " pyramid " can evenly be grown at silicon chip surface, and dense arrangement.Also contain certain amount of surfactant in the additive, play the surface tension that reduces water, the effective wetting silicon chip surface reduces the piebald phenomenon, make making herbs into wool after silicon chip surface totally even.Because the matte pyramid is more even, therefore controllable size under resistance raising of diffusion side and sintering temperature condition with higher, can effectively reduce battery drain.Power output to assembly has very high value.
The invention will be further described below in conjunction with drawings and Examples.
Fig. 1 is the monocrystalline silicon suede photo of handling through the present invention.
Embodiment:
A kind of velvet manufacturing solution of monocrystalline silicon additive, form by alkaline corrosion liquid and tensio-active agent and organic acid or salt, wherein the amount of tensio-active agent is equivalent to 0.05～0.5% (example 0.05%, 0.2%, 0.5%) of alkaline corrosion liquid quality or volume, and the amount of organic acid or salt is equivalent to 0.1～10.0% (example 0.1%, 5%, 10%) of alkaline corrosion liquid quality or volume.The corrosive fluid that described alkaline corrosion liquid is made up of sodium hydroxide of 0.2%～5% (example 0.2%, 2%, 5%) mass percent (or potassium hydroxide, yellow soda ash, salt of wormwood, water glass or sodium phosphate one or more) and water.
Organic acid or salt are to contain the lipid acid of 4～10 carbon or contain the soap of 4～10 carbon and one or more (routine butyric acid, valeric acid, enanthic acid, tartrate or Sodium Benzoates) of phenylfatty acid; Tensio-active agent is one or more (routine Pluronic F68, P105 etc.) of alkylphenol type tensio-active agent or EOPOEO type segmented copolymer.
During use, keeping the temperature of Woolen-making liquid is 60～75 ℃, etching time 10～25 minutes.About 4～5 μ m of silicon chip thinning single surface amount.
Claims (3)
1. velvet manufacturing solution of monocrystalline silicon additive, it is characterized in that: form by alkaline corrosion liquid and tensio-active agent and organic acid or salt, wherein the amount of tensio-active agent is equivalent to 0.05～0.5% of alkaline corrosion liquid quality or volume, and the amount of organic acid or salt is equivalent to 0.1～10.0% of alkaline corrosion liquid quality or volume; The corrosive fluid that described alkaline corrosion liquid is made up of one or more and water of sodium hydroxide, potassium hydroxide, yellow soda ash, salt of wormwood, water glass, sodium phosphate, the mass percent of alkali or salt is 0.2%～5% in the alkaline corrosion liquid; Organic acid or salt are to contain the lipid acid of 4～10 carbon or contain the soap of 4～10 carbon and one or more of phenylfatty acid; Tensio-active agent is one or more of alkylphenol type tensio-active agent or EOPOEO type segmented copolymer.
2. velvet manufacturing solution of monocrystalline silicon additive according to claim 1 is characterized in that: the Woolen-making liquid temperature is 60～75 ℃.
3. velvet manufacturing solution of monocrystalline silicon additive according to claim 1 is characterized in that: organic acid or salt are: butyric acid, valeric acid, enanthic acid, tartrate or Sodium Benzoate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101612878A CN101818378B (en) | 2010-04-26 | 2010-04-26 | Velvet manufacturing solution of monocrystalline silicon additive |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101612878A CN101818378B (en) | 2010-04-26 | 2010-04-26 | Velvet manufacturing solution of monocrystalline silicon additive |
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|---|---|
| CN101818378A CN101818378A (en) | 2010-09-01 |
| CN101818378B true CN101818378B (en) | 2011-11-09 |
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| CN2010101612878A Expired - Fee Related CN101818378B (en) | 2010-04-26 | 2010-04-26 | Velvet manufacturing solution of monocrystalline silicon additive |
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Cited By (1)
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| TWI553897B (en) * | 2013-06-24 | 2016-10-11 | 三菱電機股份有限公司 | Method for producing substrate for solar-electronic device and apparatus for producing substrate for solar-electronic device |
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| CN102185013A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Silicon wafer finger print removing method and cleaning method |
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| CN102191565B (en) * | 2011-04-15 | 2012-12-26 | 中节能太阳能科技（镇江）有限公司 | Monocrystalline silicon etching solution and application method thereof |
| CN102212825A (en) * | 2011-05-10 | 2011-10-12 | 苏州开元民生科技股份有限公司 | Method for preparing non-additive type slow-release etching fluid for mono-crystalline silicon slice |
| CN102286785B (en) * | 2011-08-16 | 2013-06-05 | 苏州阿特斯阳光电力科技有限公司 | Etching liquid for preparing texture surface of monocrystalline silicon solar cell |
| CN103184523B (en) * | 2011-12-27 | 2016-01-27 | 中建材浚鑫科技股份有限公司 | The preparation method of a kind of silicon single crystal Wool-making agent and textured mono-crystalline silicon |
| CN102719827A (en) * | 2012-07-05 | 2012-10-10 | 合肥海润光伏科技有限公司 | Alkaline organic etchant solution and method for removing nanoscale damage layer on surface of silicon wafer utilizing same |
| CN102839427B (en) * | 2012-08-28 | 2015-01-21 | 揭阳中诚集团有限公司 | Mono-crystalline silicon piece texturing alcohol-free additives and using method thereof |
| CN102787361B (en) * | 2012-09-07 | 2015-07-29 | 中国船舶重工集团公司第七一八研究所 | A kind of additive for monocrystalline silicon etching solution |
| CN102943307A (en) * | 2012-11-27 | 2013-02-27 | 韩华新能源（启东）有限公司 | Single crystal silicon alcohol-free wool making additive |
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| TWI553897B (en) * | 2013-06-24 | 2016-10-11 | 三菱電機股份有限公司 | Method for producing substrate for solar-electronic device and apparatus for producing substrate for solar-electronic device |
| US9537026B2 (en) | 2013-06-24 | 2017-01-03 | Mitsubishi Electric Corporation | Method for manufacturing solar-power-generator substrate and apparatus for manufacturing solar-power-generator substrate |
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| CN101818378A (en) | 2010-09-01 |
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