CN102719827A - Alkaline organic etchant solution and method for removing nanoscale damage layer on surface of silicon wafer utilizing same - Google Patents
Alkaline organic etchant solution and method for removing nanoscale damage layer on surface of silicon wafer utilizing same Download PDFInfo
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- CN102719827A CN102719827A CN2012102317318A CN201210231731A CN102719827A CN 102719827 A CN102719827 A CN 102719827A CN 2012102317318 A CN2012102317318 A CN 2012102317318A CN 201210231731 A CN201210231731 A CN 201210231731A CN 102719827 A CN102719827 A CN 102719827A
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- etchant solution
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- alkaline organic
- organic etchant
- silicon wafer
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 7
- 230000006378 damage Effects 0.000 title abstract description 5
- 239000008367 deionised water Substances 0.000 claims abstract description 12
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims abstract description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 230000036632 reaction speed Effects 0.000 abstract description 3
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000010849 ion bombardment Methods 0.000 description 17
- 238000005498 polishing Methods 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000002253 acid Substances 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- -1 metals ion Chemical class 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229940098465 tincture Drugs 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Abstract
The invention discloses an alkaline organic etchant solution which comprises tetraalkyl ammonium hydroxide and deionized water, wherein the weight percentage of the tetraalkyl ammonium hydroxide is 1% to 25%. The invention further discloses a method for removing a nanoscale damage layer on the surface of a silicon wafer utilizing the alkaline organic etchant solution. According to the alkaline organic etchant solution and the method, the nanoscale damage layer on the surface of a silicon wafer can be removed through control of a reaction speed, and the minority carrier lifetime can be prolonged.
Description
Technical field
The present invention relates to the organic etchant solution of a kind of alkalescence, relate in particular to a kind of alkaline corrosion solution of removing solar silicon wafers surface reaction ion bombardment affected layer.
Background technology
Utilize the corrosion of alkali, can remove the reactive ion bombardment damage layer of silicon chip surface, reduce the recombination rate of silicon chip surface effectively, significantly improve the silicon chip minority carrier life time silicon.At present; In the crystal silicon solar energy battery industry; The alkaline corrosion liquid that is used for the silicon chip surface affected layer mainly comprises sodium hydroxide and Pottasium Hydroxide, and the deficiency that sodium hydroxide and Pottasium Hydroxide exist mainly shows two aspects: the first, two kind of alkali all is alkali metal hydroxide; Alkali metal hydroxide is brought more metals ion easily into, and the electrical property of solar cell is had certain influence; The second, sodium hydroxide, Pottasium Hydroxide all belong to highly basic, difficult realization the when the speed of silicon slice corrosion needs accurately control.
Summary of the invention
Goal of the invention: to the problem and shortage of above-mentioned prior art existence; The purpose of this invention is to provide a kind of alkaline organic etchant solution and the method for utilizing alkaline organic etchant solution removal silicon chip surface nano level affected layer that contains less metals ion; Can well remove the nano level affected layer of silicon chip surface through controls reaction speed, improve minority carrier life time.
Technical scheme: for realizing the foregoing invention purpose, first kind of technical scheme that the present invention adopts is the organic etchant solution of a kind of alkalescence, comprises tetra-alkyl ammonium hydroxide and deionized water, and wherein the weight percent of tetra-alkyl ammonium hydroxide is 1% to 25%.
Further, said tetra-alkyl ammonium hydroxide is a TMAH.
Second kind of technical scheme that the present invention adopts is a kind of method of using the organic etchant solution of aforesaid alkalescence to remove silicon chip surface nano level affected layer, comprises the steps:
(1) in etching tank, add alkaline organic etchant solution, and solution stirring is even;
(2) gaily decorated basket and silicon chip are put into etching tank, the temperature of alkaline organic etchant solution remains on the 5-40 degree, and etching time is 10 to 600s;
(3) gaily decorated basket and silicon chip are taken out in etching tank, carry out clean then.
Beneficial effect: the TMAH that the present invention adopts can well controls reaction speed, and corrosive effect is good.The TMAH that adopts does not contain the metals ion that solar cell is had harm, can improve the electric property of battery sheet.The TMAH that adopts is nontoxic, pollution-free.
Embodiment
Below in conjunction with specific embodiment; Further illustrate the present invention; Should understand these embodiment only be used to the present invention is described and be not used in the restriction scope of the present invention; After having read the present invention, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
Embodiment 1:
A: earlier the 150L deionized water is joined in the container A of acid and alkali-resistance; Be that 40% HF joins in the container A with 15L concentration again, stir;
B: with adding the 150L deionized water among container B and the container D;
C: with adding the 150L deionized water in the container C of acid and alkali-resistance, add the TMAH of 2Kg again, stir;
D: reactive ion bombardment back polishing polycrystalline silicon sheet is packed in the gaily decorated basket, put into container A and soaked 3 minutes;
E: reactive ion bombardment back polishing polycrystalline silicon sheet is put into container B cleaned 3 minutes from container A;
F: reactive ion bombardment back polishing polycrystalline silicon sheet taken out from container B put into container C, soak 180s, temperature is controlled at 25 ± 1 and spends;
G: cleaned 3 minutes with put into container D after the polishing polycrystalline silicon sheet takes out after the reactive ion bombardment from container C.
Use organic corrosive fluid of present embodiment; Successfully make reactive ion bombardment back polishing polycrystalline silicon sheet erosion rate be reduced to 2-10nm/min from 10-30nm/min; After removing the affected layer on surface, utilize the silicon chip of WT2000 test tincture of iodine passivation, minority carrier life time is brought up to 12-25us from 8-12us; Thereby significantly lowered recombination-rate surface, improved the efficiency of conversion of battery.
Embodiment 2:
A: earlier the 150L deionized water is joined in the container A of acid and alkali-resistance; Be that 40% HF joins in the container A with 15L concentration again, stir;
B: with adding the 150L deionized water among container B and the container D;
C: with adding the 150L deionized water in the container C of acid and alkali-resistance, add the TMAH of 1.5Kg again, stir;
D: reactive ion bombardment back polishing polycrystalline silicon sheet is packed in the gaily decorated basket, put into container A and soaked 3 minutes;
E: reactive ion bombardment back polishing polycrystalline silicon sheet is put into container B cleaned 3 minutes from container A;
F: reactive ion bombardment back polishing polycrystalline silicon sheet taken out from container B put into container C, soak 10s, temperature is controlled at 5 ± 1 and spends;
G: cleaned 3 minutes with put into container D after the polishing polycrystalline silicon sheet takes out after the reactive ion bombardment from container C.
Use organic corrosive fluid of present embodiment; Successfully make reactive ion bombardment back polishing polycrystalline silicon sheet erosion rate be reduced to 2-10nm/min from 10-30nm/min; After removing the affected layer on surface, utilize the silicon chip of WT2000 test tincture of iodine passivation, minority carrier life time is brought up to 12-25us from 8-12us; Thereby significantly lowered recombination-rate surface, improved the efficiency of conversion of battery.
Embodiment 3:
A: earlier the 150L deionized water is joined in the container A of acid and alkali-resistance; Be that 40% HF joins in the container A with 15L concentration again, stir;
B: with adding the 150L deionized water among container B and the container D;
C: with adding the 150L deionized water in the container C of acid and alkali-resistance, add the TMAH of 50Kg again, stir;
D: reactive ion bombardment back polishing polycrystalline silicon sheet is packed in the gaily decorated basket, put into container A and soaked 3 minutes;
E: reactive ion bombardment back polishing polycrystalline silicon sheet is put into container B cleaned 3 minutes from container A;
F: reactive ion bombardment back polishing polycrystalline silicon sheet taken out from container B put into container C, soak 600s, temperature is controlled at 40 ± 1 and spends;
G: cleaned 3 minutes with put into container D after the polishing polycrystalline silicon sheet takes out after the reactive ion bombardment from container C.
Use organic corrosive fluid of present embodiment; Successfully make reactive ion bombardment back polishing polycrystalline silicon sheet erosion rate be reduced to 2-10nm/min from 10-30nm/min; After removing the affected layer on surface, utilize the silicon chip of WT2000 test tincture of iodine passivation, minority carrier life time is brought up to 12-25us from 8-12us; Thereby significantly lowered recombination-rate surface, improved the efficiency of conversion of battery.
Claims (3)
1. organic etchant solution of alkalescence, it is characterized in that: comprise tetra-alkyl ammonium hydroxide and deionized water, wherein the weight percent of tetra-alkyl ammonium hydroxide is 1% to 25%.
2. according to the organic etchant solution of the said alkalescence of claim 1, it is characterized in that: said tetra-alkyl ammonium hydroxide is a TMAH.
3. a use alkaline organic etchant solution is according to claim 1 or claim 2 removed the method for silicon chip surface nano level affected layer, it is characterized in that, comprises the steps:
(1) in etching tank, add alkaline organic etchant solution, and solution stirring is even;
(2) gaily decorated basket and silicon chip are put into etching tank, the temperature of alkaline organic etchant solution remains on the 5-40 degree, and etching time is 10 to 600s;
(3) gaily decorated basket and silicon chip are taken out in etching tank, carry out clean then.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102317318A CN102719827A (en) | 2012-07-05 | 2012-07-05 | Alkaline organic etchant solution and method for removing nanoscale damage layer on surface of silicon wafer utilizing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102317318A CN102719827A (en) | 2012-07-05 | 2012-07-05 | Alkaline organic etchant solution and method for removing nanoscale damage layer on surface of silicon wafer utilizing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102719827A true CN102719827A (en) | 2012-10-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012102317318A Pending CN102719827A (en) | 2012-07-05 | 2012-07-05 | Alkaline organic etchant solution and method for removing nanoscale damage layer on surface of silicon wafer utilizing same |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101818378A (en) * | 2010-04-26 | 2010-09-01 | 江苏林洋新能源有限公司 | Velvet manufacturing solution of monocrystalline silicon additive |
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2012
- 2012-07-05 CN CN2012102317318A patent/CN102719827A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101818378A (en) * | 2010-04-26 | 2010-09-01 | 江苏林洋新能源有限公司 | Velvet manufacturing solution of monocrystalline silicon additive |
Non-Patent Citations (1)
| Title |
|---|
| 刘艳艳等: "高性能高温压力传感器", 《半导体技术》 * |
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Application publication date: 20121010 |