CN102132391A - Mold release film for manufacturing semiconductor resin package and semiconductor resin package manufacturing method using same - Google Patents

Mold release film for manufacturing semiconductor resin package and semiconductor resin package manufacturing method using same Download PDF

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Publication number
CN102132391A
CN102132391A CN200980133166.8A CN200980133166A CN102132391A CN 102132391 A CN102132391 A CN 102132391A CN 200980133166 A CN200980133166 A CN 200980133166A CN 102132391 A CN102132391 A CN 102132391A
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CN
China
Prior art keywords
release film
mold release
methyl
semiconductor chip
mould
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CN200980133166.8A
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CN102132391B (en
Inventor
真田隆幸
乘富胜美
又吉智也
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Mitsui Chemicals Tohcello Inc
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Mitsui Chemical Industry Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B29C33/68—Release sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F210/00—Copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond
    • C08F210/14—Monomers containing five or more carbon atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31725—Of polyamide
    • Y10T428/31739—Nylon type
    • Y10T428/31743—Next to addition polymer from unsaturated monomer[s]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31725—Of polyamide
    • Y10T428/3175—Next to addition polymer from unsaturated monomer[s]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31938—Polymer of monoethylenically unsaturated hydrocarbon

Abstract

The present invention aims to provide a mold release film, which has excellent mold releasability to a semiconductor resin package and does not easily generate warpage, wrinkles and the like; and a method for obtaining a semiconductor resin package having excellent dimensional accuracy by using such mold release film. The mold release film for manufacturing a semiconductor resin package has one or more base material layers (C), a pair of outermost layers (A) which sandwich the base material layers (C) and contain a 4-methyl-1-pentene polymer as a main component, and a pair of adhesive layers (B) which adhere together the base material layers (C) and the outermost layers (A).

Description

Semiconductive resin encapsulation die for manufacturing mold release film and the manufacture method of using its semiconductive resin encapsulation
Technical field
The manufacture method that the present invention relates to semiconductive resin encapsulation die for manufacturing mold release film and use its semiconductive resin encapsulation.
Background technology
Semiconductor chip is usually as being used by the semiconductive resin encapsulation of encapsulant sealing.Generally speaking the semiconductive resin encapsulation obtains by following transfer molding: semiconductor chip is filled in the chamber (cavity) of mould, filling with epoxy resin in this chamber is the encapsulant of principal component.Problem below in transfer molding in the past, existing.
1) because encapsulant pollutes the inner surface of mould sometimes, so the washing of mould just becomes necessary, the operating efficiency reduction.
2) inner surface owing to mould sustains damage, so die life is short.
3) easily in moulding the semiconductive resin encapsulation on produce burr.
In order to improve the problems referred to above, known have: the release sheets such as sheet of polytetrafluoroethylene (PTFE) system are disposed in the mould and the method for moulding (being also referred to as " film assistant formation ").Yet, with regard to the sheet of PTFE system,, therefore have the such problem of semiconductive resin encapsulation that in the method, is difficult to obtain desirable shape owing in mould, produce fold easily.Further, with regard to the sheet of PTFE system, be gas owing to when burning, produce fluorine, therefore also there is the discarded such problem that is not easy.
Semiconductor casting mold (mold) as other is used release sheet, proposition has: comprise stable on heating layer (B layer), the release sheet (for example, patent documentation 1) that will be adjusted into particular range from the peeling force of moulding product undertaking from the layer (A layer) of the demoulding of moulding product and undertake the heating when being directed to moulding.In the document, specifically disclose the have 3-tier architecture release sheet of " poly(4-methyl-1-pentene)/adhesive linkage/PET ".
As other mold release film, proposition has a kind of like this film: it has 5 layers of structure that are made of A layer (superficial layer), B layer (adhesive linkage), C layer (substrate layer), B ' layer (adhesive linkage) and A ' layer (superficial layer), wherein, A layer (superficial layer) and A ' layer (superficial layer) comprise 4-methyl-1-pentene based polymer resin (for example, patent documentation 2).This film is disclosed in the document preferably as the mold release film in the manufacturing of multilayer printed board.
The prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2002-158242 communique
Patent documentation 2: TOHKEMY 2004-82717 communique
Summary of the invention
The technical problem that invention will solve
The release sheet of record in the patent documentation 1 owing to have asymmetric stepped construction for central core, therefore is easy to generate warpage.Therefore, the release sheet of record in the patent documentation 1 as the mold releasability sheet, is directed in release sheet in the mould, when carrying out vacuum suction, brings out vertical fold sometimes, do not connect airtight in the mold cavity inner surface sometimes etc., be difficult to stably adsorb release sheet.Vertical fold is, the fold that produces along the length direction of release sheet in the face of release sheet.
So owing to produce warpage, fold etc., therefore sometimes can't with release sheet stably vacuum suction in mould inner surface.Its result with regard to the fold of release sheet etc., is needed in the semiconductive resin encapsulation as the moulding product sometimes, can't obtain the semiconductive resin encapsulation of desired shape.Further, though made the semiconductive resin encapsulation while also attempt correcting the warpage of release sheet, not only operation reduction, and also the semiconductive resin that still can't stably obtain desired shape encapsulates.
That is,, expecting:, and be difficult to produce the mold release film of warpage, fold etc. not only with the release property excellence of semiconductive resin encapsulation for the semiconductive resin encapsulation (the semiconductive resin encapsulation that dimensional accuracy is good) that obtains desired shape.Therefore the object of the present invention is to provide:, and be difficult to produce the mold release film of warpage, fold etc. with the release property excellence of semiconductive resin encapsulation; And by using this mold release film to obtain the method for the good semiconductive resin encapsulation of dimensional accuracy.
The technical scheme of dealing with problems
The 1st aspect of the present invention relates to mold release film as follows.
[1] semiconductive resin encapsulation die for manufacturing mold release film, it has: the substrate layer C that one deck is above, with aforementioned substrates layer C clamping, contain a pair of outermost layer A of 4-methyl-1-pentene based polymer, with aforementioned substrates layer C and the bonding a pair of adhesive linkage B of aforementioned outermost layer A as principal component.
[2] according to [1] described mold releasability film, aforementioned substrates layer C comprises polyamide, and aforementioned adhesive linkage B comprises: the modification 4-methyl-1-pentene based polymer that the modification of 4-methyl-1-pentene based polymer is obtained by the acid anhydrides of unsaturated carboxylic acid and/or unsaturated carboxylic acid.
[3] according to [1] or [2] described mold releasability film, aforementioned adhesive linkage B comprises: the modification 4-methyl-1-pentene based polymer that the graft modification of 4-methyl-1-pentene based polymer is obtained by maleic anhydride.
[4] according to [2] or [3] described mold releasability film, aforementioned polyamide is polyamide 6 or polyamide 66.
[5] according to each described mold releasability film in [1]～[4], aforementioned substrates layer C is one deck.
[6] according to each described mold releasability film in [1]～[5], the aggregate thickness of aforementioned a pair of outermost layer A and aforementioned a pair of adhesive linkage B is below the 32 μ m.
[7] according to each described mold releasability film in [1]～[6], the stepped construction of aforementioned mold release film is symmetry for aforementioned substrates layer C.
[8] aforementioned mold release film is each described mold releasability film in [1]～[7] of using in the manufacturing process of semiconductive resin encapsulation, and the manufacturing process of described semiconductive resin encapsulation comprises following operation:
The operation of configuring semiconductor chip in aforementioned mould; The operation of the aforementioned mold release film of configuration between aforesaid semiconductor chip and aforementioned mould inner surface; Obtain the operation of hermetically sealed semiconductor chip by injecting sealing material in aforementioned mould; The operation that aforementioned hermetically sealed semiconductor chip is peeled off from aforementioned mold release film.
The 2nd aspect of the present invention relates to the manufacture method of the semiconductive resin encapsulation of use mold release film as follows.
[9] manufacture method of semiconductive resin encapsulation comprises following operation: the operation of configuring semiconductor chip in mould; The operation of each described mold release film in configuration [1]～[7] between semiconductor chip and aforementioned mould inner surface; Obtain the operation of hermetically sealed semiconductor chip by injecting sealing material in aforementioned mould; And the operation that aforementioned hermetically sealed semiconductor chip is peeled off from aforementioned mold release film.
The invention effect
The present invention can provide the release property excellence with the semiconductive resin encapsulation, and is difficult to produce the mold release film of warpage, vertical fold.By using this mold release film to make the semiconductive resin encapsulation, can provide dimensional accuracy good semiconductive resin encapsulation.
Description of drawings
Fig. 1: the schematic diagram of representing the structure example of mold release film of the present invention.
Fig. 2: the figure of example of the 1st operation that represents the manufacture method of semiconductive resin of the present invention encapsulation.
Fig. 3: the figure of example of the 2nd operation that represents the manufacture method of semiconductive resin of the present invention encapsulation.
Fig. 4: the figure of example of the 3rd operation that represents the manufacture method of semiconductive resin of the present invention encapsulation.
Fig. 5: the figure of the example of the operation that expression is disposed mold release film once more.
Fig. 6: the figure of the assay method of the side fold degree of depth among the expression embodiment, the semiconductive resin encapsulation.
Embodiment
1. semiconductive resin encapsulates the die for manufacturing mold release film
Semiconductive resin encapsulation die for manufacturing mold release film of the present invention (mold release film) comprises: substrate layer C, with substrate layer C clamping and contain a pair of outermost layer A of 4-methyl-1-pentene based polymer as principal component, a pair of adhesive linkage B that between substrate layer C and outermost layer A, disposes.
In the inside of mould semiconductor chip carried out when resin-sealed, mold release film of the present invention is disposed at the inner surface of mould.By disposing mold release film of the present invention, can be easily with the demoulding from the mould of resin-sealed semiconductor chip (semiconductive resin encapsulation).
A pair of outermost layer A is the outermost layer that is disposed at the two sides of mold release film.One side's outermost layer A is connected to semiconductive resin encapsulation (moulding product) mutually; The opposing party's outermost layer A is connected to mould inside mutually.Thereby outermost layer A requires thermal endurance and release property excellence.
With regard to outermost layer A, contain the 4-methyl-1-pentene based polymer as principal component.With regard to the 4-methyl-1-pentene based polymer and since not only fusing point up to 220～240 ℃, can not fusion under the mold temperature in the manufacturing process of semiconductive resin encapsulation, and surface energy is low, so the release property excellence.In the present invention, mark "～" comprises the scope at its two ends, too following.
The 4-methyl-1-pentene based polymer is meant, the copolymer (4 methyl 1 pentene copolymer) of the homopolymers of 4-methyl-1-pentene (4-methyl-1-pentene homopolymers) or 4-methyl-1-pentene and other monomer except 4-methyl-1-pentene.
The example of other monomer in the 4 methyl 1 pentene copolymer comprises the alpha-olefin of carbon number 2～20.The example of the alpha-olefin of carbon number 2～20 comprises ethene, propylene, 1-butylene, 1-hexene, 1-heptene, 1-octene, 1-decene, tetradecene, cetene, 1-heptadecene, 1-vaccenic acid and 1-eicosylene etc.These alpha-olefins can be used alone or in combination of two or more kinds.
Among the alpha-olefin of carbon number 2～20, the alpha-olefin of preferred carbon number 7～20, the more preferably alpha-olefin of carbon number 8～20, the alpha-olefin of further preferred carbon number 10～20.
The repetitive that comes from 4-methyl-1-pentene in the 4 methyl 1 pentene copolymer is preferably more than the 93 quality %, more preferably 93～99 quality %, more preferably 95～98 quality %.Such 4 methyl 1 pentene copolymer has the favorable rigidity that comes from 4-methyl-1-pentene and comes from the good mouldability of alpha-olefin.
The 4-methyl-1-pentene based polymer is preferably 0.5～250g/10 minute according to ASTM D1238 and the melt flow rate (MFR) (MFR) measured under the condition of 260 ℃ of load 5.0kg, temperature, more preferably 1.0～150g/l.If the MFR of 4-methyl-1-pentene based polymer is in above-mentioned scope, mouldability and mechanical property excellence so.
The 4-methyl-1-pentene based polymer can be made by arbitrary method.For example, obtain by polymerization 4-methyl-1-pentene in the presence of known catalyst such as ziegler natta catalyst, metallocene series catalysts.Employed 4-methyl-1-pentene based polymer can also can be commercially available product for the 4-methyl-1-pentene based polymer of having made like that as described above among the present invention.The example of the commercially available product of 4-methyl-1-pentene based polymer comprises the system TPX of Mitsui Chemicals, Inc etc.
Preferred 4-methyl-1-pentene based polymer has crystallinity.Particularly, preferred 4-methyl-1-pentene based polymer has isotactic structure or syndiotactic structure; Especially preferably has isotactic structure.With regard to the molecular weight of 4-methyl-1-pentene based polymer,, so just be not particularly limited as long as in the scope that satisfies mouldability and mechanical property.
In the scope of not damaging purpose of the present invention, outermost layer A can comprise other the resin except the 4-methyl-1-pentene based polymer.
In the scope of not damaging purpose of the present invention, outermost layer A also can comprise additive.The example of additive comprises heat-resisting stabilizing agent, weather-proof stabilizer, getting rusty prevents the known additive that agent, anti-copper evil stabilizer, antistatic agent etc. cooperate usually in polyolefin.With regard to the addition of additive, be preferably 0.0001～10 mass parts with respect to 4 methyl 1 pentene copolymer resin 100 mass parts.
Substrate layer C is the intermediate layer of mold release film, has the function of film base material.Thus, with regard to substrate layer C, preferred thermal endurance and mechanical property excellence.Especially, the resin that becomes the principal component of substrate layer C is preferably than as intensity and the more excellent resin of creep resistant under the 4-methyl-1-pentene based polymer high temperature of the principal component of outermost layer A.High temperature herein is meant the mold temperature when making the semiconductive resin encapsulation.
The example of such resin comprises polycarbonate resin, mylar and polyamide.Wherein, preferred polyamide resin, more preferably fatty polyamide resin.These polyamides, be compared to polyester based resins such as pet resin, owing to, therefore can effectively suppress the splitting of outermost layer A and substrate layer C with the cementability height of the modification 4-methyl-1-pentene based polymer that comprises among the adhesive linkage B described later.The fatty polyamide resin is meant the resin that the polycondensation of the polycondensation reaction of ring-opening polymerisation, aliphatic diamine composition and aliphatic dicarboxylic acid composition by lactams or aliphatic amino acid obtains.
Comprise polyamide 6, polyamide 11, polyamide 12 and polyamide 6 12 etc. by the example that lactams is carried out the fatty polyamide that ring-opening polymerisation obtains.The example of the fatty polyamide that the polycondensation by aliphatic diamine composition and aliphatic dicarboxylic acid composition obtains comprises polyamide 66, polyamide 6 10, polyamide 46, polyamide MXD6, polyamide 6 T, polyamide 6 I and polyamide 9T etc.
Wherein, preferred polyamide 6 or polyamide 66; More preferably polyamide 66.This be because, with regard to these polyamide (particularly polyamide 66), not only high-melting-point and high elastic modulus, thermal endurance and mechanical property excellence, and also excellent with the cementability of adhesive linkage B described later.For mold release film with the substrate layer C that comprises these polyamide, not only in mould, be difficult to produce fold, and the crack that is difficult to produce the pin hole shape.If the leakage of encapsulant is remarkable by the crack of pin hole shape, then the part of encapsulant composition is just adhered to and is piled up in the mold cavity inwall, and pollutes mould in the short time, and is therefore not preferred.
The fusing point of the fatty polyamide of measuring according to the DSC method is preferably more than 190 ℃.This be because, for the mold release film that substrate layer C comprises the fatty polyamide with fusing point lower than aforementioned lower limit, thermal endurance is insufficient, is easy to produce fold.
Substrate layer C can be multilayer, 3 layers of " C/C '/C " expression of also can serving as reasons.In this case, at least one side of preferred substrates layer C and substrate layer C ' comprises polyamide 66.
With regard to substrate layer C, also can further comprise other the resin except aforesaid polyamide etc.The preferred embodiment of other resin is: than the 4-methyl-1-pentene based polymer as the principal component of outermost layer A, for the more excellent heat-resistant elastomer of the creep resistant of the tensile stress under the high temperature, compression stress, or be difficult to relax the heat-resistant elastomer of stress and elastic return excellence.
If consider and the cementability of adhesive linkage B that the example of so such heat-resistant elastomer comprises polyamide thermoplastic based elastomers, thermoplastic polyester based elastomers etc.The fusing point of these thermoplastic elastomer (TPE)s of measuring according to the DSC method is preferably more than 190 ℃.Need to prove, even 190 ℃ of the fusing point deficiencies of thermoplastic elastomer (TPE), also can carry out chemical crosslinking, or carry out physical crosslinking, thereby improve creep resistant, elastic return under the high temperature by ultraviolet ray, electron ray, gamma ray etc. by using crosslinking agent, crosslinking coagent.
The example of polyamide thermoplastic based elastomers comprises, with polyamide as hard segment, with polyester or polyethers block copolymer as soft chain segment.The example that constitutes the polyamide of hard segment comprises polyamide 6, polyamide 66, polyamide 6 10, polyamide 6 12, polyamide 11 etc.The example that constitutes the polyethers of soft chain segment comprises polyethylene glycol (PEG), polypropylene glycol (PPG), polytetramethylene glycol (PTMG) etc.
The example of thermoplastic polyester based elastomers comprises, with the crystalline polymer segment that comprises the crystalline aromatic polyester unit as hard segment, with the amorphism polymer segment that comprises polyether units or aliphatic poly ester units block copolymer as soft chain segment.The example that constitutes the crystalline polymer that comprises the crystalline aromatic polyester unit of hard segment comprises polybutylene terephthalate (PBT) (PBT), PBN (PBN) etc.The example that constitutes the amorphism polymer that comprises polyether units of soft chain segment comprises polytetramethylene ether diol (PTMG) etc.The example that constitutes the amorphism polymer that comprises the aliphatic poly ester units of soft chain segment comprises polycaprolactone aliphatic polyesters such as (PCL).The instantiation of thermoplastic polyester based elastomers comprises, the block copolymer of polybutylene terephthalate (PBT) (PBT) and polytetramethylene ether diol (PTMG); The block copolymer of polybutylene terephthalate (PBT) (PBT) and polycaprolactone (PCL); The block copolymer of PBN (PBN) and aliphatic polyester etc.
In the scope of not damaging purpose of the present invention, substrate layer C can comprise known additive.Substrate layer C contains under the situation of polyamide as principal component, the example of additive comprises, comprising to improve heat-resistant aging is the known additive that cooperates usually in the polyamides such as slip agent such as heat-resisting stabilizing agent, calcium stearate and aluminum stearate of copper compound system of purpose.
With regard to adhesive linkage B, be configured between each layer and substrate layer C of a pair of outermost layer A, have the function that they are bonding.By configuration adhesive linkage B, thereby when matched moulds (type Parties め), injection moulding, can be suppressed in the inherent mold release film of mould and be easy to generate the substrate layer C at the concentrated position of stress and the splitting of outermost layer A.Be easy to generate the position that stress concentrates and be meant, for example the marginal portion in the chamber of mould (boundary member of the chamber face of mould and die joint (parting surface)) etc.Preferred adhesive linkage B comprises easily fused (な じ body) outermost layer A and substrate layer C both sides' material.
Adhesive linkage B preferably comprises the 4-methyl-1-pentene based polymer as the principal component of outermost layer A is modified as easily the material that fuses with substrate layer C; Particularly, preferably comprise and be modified as 4-methyl-1-pentene based polymer with polar group.With regard to substrate layer C, preferably comprise polyamide, this is because this polyamide is easy and polar group is fused.
Be modified as 4-methyl-1-pentene based polymer, can obtain by arbitrary method with polar group.Wherein, preferably come modification 4-methyl-1-pentene based polymer by unsaturated carboxylic acid and/or its acid anhydrides (below be also referred to as " unsaturated carboxylic acid etc. ").
Particularly, preferably make copolymerization such as 4-methyl-1-pentene based polymer and unsaturated carboxylic acid; More preferably make glycerol polymerizations such as 4-methyl-1-pentene based polymer and unsaturated carboxylic acid.The glycerol polymerization of 4-methyl-1-pentene based polymer and unsaturated carboxylic acid etc. can be undertaken by known method, for example in the presence of peroxide etc. melting mixings such as 4-methyl-1-pentene based polymer and unsaturated carboxylic acid is got final product.
The 4-methyl-1-pentene based polymer can use aforesaid 4-methyl-1-pentene based polymer.The inherent viscosity [η] of 4-methyl-1-pentene based polymer that measure in 135 ℃, decahydronaphthalene, before the modification is preferably 0.5～25dl/g, more preferably 0.5～5dl/g.
The example of unsaturated carboxylic acid etc. comprises having unsaturated compound carboxyl and unsaturated group, carbon number 3～20; And has unsaturated compound acid anhydride and unsaturated group, carbon number 3～20.The example of unsaturated group comprises vinyl, vinylene base and unsaturated cyclic alkyl.
The concrete example of unsaturated carboxylic acid etc. comprises: unsaturated monocarboxylics such as acrylic acid, methacrylic acid; Unsaturated dicarboxylics such as maleic acid, fumaric acid, itaconic acid, citraconic acid, pi-allyl butanedioic acid, mesaconic acid (mesaconic acid), glutaconate, Na Dike acid TM, methyl Na Dike acid, tetrahydrophthalic acid, methylhexahydrophthaacid acid; And unsaturated dicarboxylic acid anhydride such as maleic anhydride, itaconic anhydride, citraconic anhydride, pi-allyl succinyl oxide, glutaconic anhydride, carbic anhydride TM, methyl carbic anhydride, tetrabydrophthalic anhydride, methyl tetrahydrophthalic anhydride etc.They can use separately or make up more than 2 kinds and use.Wherein, be preferably maleic acid, maleic anhydride, Na Dike acid TM or carbic anhydride TM, more preferably maleic anhydride.
Modification the percent grafting of 4-methyl-1-pentene based polymer (below be also referred to as " modification 4-methyl-1-pentene based polymer "), be preferably below the 20 quality %, more preferably 0.1～5 quality %, more preferably 0.5～2 quality %.Percent grafting is in the modification 4-methyl-1-pentene based polymer of above-mentioned scope, has good cementability for outermost layer A and substrate layer C both sides.
Preferred modification 4-methyl-1-pentene based polymer does not have cross-linked structure in fact.As for there not being this situation of cross-linked structure, can be dissolved in for example organic solvent such as paraxylene by making modification 4-methyl-1-pentene based polymer, confirm according to the non-existent situation of gelling material.
Inherent viscosity [η] that measure, modification 4-methyl-1-pentene based polymer is preferably 0.2～10dl/g, more preferably 0.5～5dl/g in 135 ℃, decahydronaphthalene.
With regard to adhesive linkage B, though can be only with modification 4-methyl-1-pentene based polymer as principal component, preferably with the mixture of modification 4-methyl-1-pentene based polymer and other alpha-olefine polymers as principal component.In the case, with regard to modification 4-methyl-1-pentene based polymer, preferably in mixture, contain 20～40 quality %.
Alpha-olefine polymers is preferably the alpha-olefine polymers of carbon number 2～20.The example of the alpha-olefine polymers of carbon number 2～20 comprises the polymer of ethene, propylene, 1-butylene, 1-hexene, 1-octene, 1-decene, tetradecene, 1-vaccenic acid etc.Wherein, preferred 1-butylene based polymer.
1-butylene based polymer is: the copolymer of the alpha-olefin of the homopolymers of 1-butylene or 1-butylene and the carbon number 2～20 except the 1-butylene.The example of the alpha-olefin of the carbon number 2～20 except the 1-butylene comprises ethene, propylene, 1-hexene, 1-octene, 1-decene, tetradecene, 1-vaccenic acid etc.; Be preferably ethene or propylene.
With regard to 1-butylene based polymer, preferably comprise the above repetitive that comes from the 1-butylene of 60 quality %, more preferably comprise more than the 80 quality %.This be because, Combination (or intermiscibility) excellence of such 1-butylene based polymer and modification 4-methyl-1-pentene based polymer.
According to ASTM D1238 and under load 2.16kg, 190 ℃ of conditions of temperature melt flow rate (MFR) (MFR) that measure, 1-butylene based polymer be preferably 0.01～100g/10 minute, more preferably 0.1～50g/10 minute.With regard to the 1-butylene based polymer in MFR is in above-mentioned scope, good with the Combination (or intermiscibility) of modification 4-methyl-1-pentene based polymer, can improve the cementability of adhesive linkage B.
Adhesive linkage B is also same with outermost layer A, substrate layer C, also can comprise aforesaid additive except principal component.
Such as described above, mold release film of the present invention has substrate layer C, with a pair of outermost layer A of substrate layer C clamping, a pair of adhesive linkage B that between each layer of a pair of outermost layer A and substrate layer C, disposed.That is to say that mold release film of the present invention preferably has the stepped construction with respect to the central core symmetry.This be because, for the film of stepped construction, in filling in mould and when being heated, be difficult to take place the distortion (warpage etc.) that causes by thermal expansion difference, moisture absorption etc. with symmetry.In addition, with regard to mold release film,, also can comprise other the layer except substrate layer C, outermost layer A and adhesive linkage B so as required if having stepped construction with respect to the central core symmetry.
With regard to substrate layer C, can be one deck; Also can be the multilayer more than two layers.Substrate layer C is under the situation of multilayer, can a plurality of substrate layers are directly stacked; Also can between substrate layer and substrate layer, dispose other layer (for example adhesive linkage).
The example of the concrete stepped construction of mold release film comprises following form.In following form, A is outermost layer A; B is adhesive linkage B; C is substrate layer C.C ' is one of substrate layer C (intermediate layer); D is with substrate layer C and the bonding adhesive linkage of substrate layer C '.
A/B/C/B/A
A/B/C/C’/C/B/A
A/B/C/D/C’/D/C/B/A
Wherein, preferred substrates layer (intermediate layer) is the stepped construction of " A/B/C/B/A " of one deck.This be because, easy to manufacture.Fig. 1 is the schematic diagram of the preferred configuration example of expression mold release film of the present invention.As shown in Figure 1, mold release film 10 has: substrate layer 12, with a pair of outermost layer 14 of substrate layer 12 clampings, be disposed at a pair of adhesive linkage 13 between substrate layer 12 and the outermost layer 14.Substrate layer 12 is aforementioned substrates layer C; Outermost layer 14 is aforementioned outermost layer A; Adhesive linkage 13 is aforementioned adhesive linkage B.
In addition, as a pair of outermost layer A, a pair of adhesive linkage B etc., be made as identically if will be disposed at for central core the thickness of a pair of layer (layer that constitutes by identical material) of the position of symmetry, can cancel out each other the deflection that causes by coefficient of thermal expansion etc. so and suppress warpage, thus preferred.
The gross thickness of mold release film is preferably 15～100 μ m.With regard to the thickness of each layer, the gross thickness that is adjusted into mold release film is in aforementioned range and gets final product.Particularly, outermost layer A is preferably 1～30 μ m, and adhesive linkage B is preferably 1～20 μ m, and substrate layer C is preferably 20～40 μ m.
As previously mentioned, with regard to mold release film of the present invention, have high elastic modulus and dystectic substrate layer C; On the other hand, in order to suppress the splitting of outermost layer A and substrate layer C, between outermost layer A and substrate layer C, has adhesive linkage B.
Yet, if the gross thickness of mold release film becomes greatly, particularly the gross thickness of outermost layer A and adhesive linkage B becomes big, is easy to produce fold (side fold) in the side of semiconductive resin encapsulation so, might produce bad order, the demoulding is bad.That is, when making the semiconductive resin encapsulation,, be easy to generate the side fold of semiconductive resin encapsulation so if the compressive yield stress of the structural material of mold release film is low than the clamping pressure that the matched moulds part at the mold cavity periphery is produced.Especially, with regard to the resin that constitutes outermost layer A and adhesive linkage B, owing to softness when high temperature, compressive yield stress is lower, therefore produces side fold in the semiconductive resin encapsulation easily.
Can think that the fold that the side produced (side fold) of semiconductive resin encapsulation is based on following such mechanism generation.That is, if in mould, dispose under the state of mold release film will be up and down the mould matched moulds, the mold release film that is configured in so between semiconductor chip substrate and the mould inner surface is just crushed under the effect of clamping pressure.Crushed and remaining mold release film part will be with towards the mold cavity inboard, promptly exposed to nearby fleeing from such mode with the substrate of the semiconductor chip of the opposed mould inner surface of lateral parts of semiconductive resin encapsulation.Its result on the opposed side of part of exposing with remaining mold release film of semiconductive resin encapsulation, produces depression.The depression of this semiconductive resin package side surface presents the decorative pattern of wrinkle shape in appearance.Also can produce such side fold under the situation of the encapsulation of after with a plurality of semiconductor chips while casting mold together, carrying out singualtion and obtaining; For example, as QFN (four sides do not have pin flat packaging (Quad FlatNon-leaded package)), when semiconductor chip casting mold that will (singualtion) single sheet and the encapsulation that obtains, and when the lateral parts under the sealing state directly constitutes the goods profile, become bad order especially easily.In addition, should be rendered as the sunk part of fold in appearance, be about to the demoulding (die sinking) before, remaining mold release film is just got into the side of semiconductive resin encapsulation in mould.Thus, when the semiconductor resin-encapsulated was carried out the demoulding, remaining mold release film part did not break away from regard to the side of getting into the semiconductive resin encapsulation sometimes, thereby can't peel off.
In order to prevent this side fold, as described later, also can avoid sometimes by reducing adjustment conditions of molding such as mold clamping force.Yet, only be difficult to prevent preferably in the scope that does not produce vertical fold, burr and crack etc., reduce the gross thickness of mold release film under the situation of side fold by adjusting condition of molding; Particularly preferably in the scope of not damaging release property and adhesiveness between layers, reduce the gross thickness of outermost layer A and adhesive linkage B.
The gross thickness of outermost layer A and adhesive linkage B is meant that the gross thickness of a pair of outermost layer A and a pair of adhesive linkage B is preferably 12～32 μ m.The thickness of each outermost layer A is 4～10 μ m, and preferably the thickness of each adhesive linkage B is 2～6 μ m.
With regard to mold release film of the present invention, the tensile modulus of elasticity under the preferred mold temperature is more than the 60MPa, and the hot strength under the mold temperature (extensibility is 500% o'clock a intensity) is for more than the 5MPa.Particularly, the tensile modulus of elasticity preferred 175 ℃ the time is 60MPa above～300MPa, hot strength (extensibility is 500% o'clock a intensity for initial stage chuck spacing) are for more than the 5MPa.If tensile modulus of elasticity and hot strength are in above-mentioned scope, so both can obtain the mould followability, also be difficult to produce the fold under the mold temperature.Tensile modulus of elasticity and hot strength can be measured according to following method.
I) hot strength
As test film, prepare the billet sheet that cuts out with width 15mm from mold release film.At this moment, the length direction with billet is made as parallel with the take-up direction of film.On the cupping machine that is adjusted into the band thermostat of mold temperature uniform temp, be that the mode of 50mm is clamped the afore-mentioned test sheet according to the chuck spacing.The test film that under the condition of draw speed 200mm/min (fixing), stretches, will not rupture and the stress when being 500% (chuck spacing 300mm) with respect to the extensibility of initial stage chuck spacing (50mm) as hot strength.
Ii) tensile modulus of elasticity
According to the gradient of straight line portion in the tensile stress-strain curve that obtains by aforementioned tension test, the initial stage,, obtain tensile modulus of elasticity according to JIS-K7113.
With regard to mold release film of the present invention, can make by known method.Mold release film can be by will constituting each layer the resin coextrusion method or come stacked method to wait by membranous body lamination to obtain with each layer.Further, as required, for example also can form based on such trickle concavo-convex of the fluting machined surface of knurling rolls on the single face of mold release film or two sides.
2. the manufacture method of semiconductive resin encapsulation
The manufacture method of semiconductive resin encapsulation of the present invention comprises following operation: the 1st operation of configuration mold release film between semiconductor chip in being disposed at mould and the mould inner surface; With 2nd operation of encapsulant with the semiconductor chip sealing; And the 3rd operation that hermetically sealed semiconductor chip is peeled off from mold release film.
Semiconductor chip is to be formed with the chip of semiconductor integrated circuit.In the manufacturing of semiconductive resin encapsulation, semiconductor chip is fixed in lead frame usually, be called as substrate such as mother board plate and use.With regard to employed semiconductor chip among the present invention, be preferably the semiconductor chip that known semiconductor chip is fixed in lead frame, substrate by known method.
Mould is meant, is used to obtain the mould that the moulding of desirable semiconductive resin encapsulation is used.The shape of mould can be known shape, and the material of mould also can be known material.
Encapsulant is meant, is used for the resin combination with the semiconductor chip sealing.Encapsulant, though can be known encapsulant, being preferably with thermosetting resins such as epoxy resin is the encapsulant of principal component.
In the 1st operation, the aforementioned mold release film of configuration between aforesaid semiconductor chip and aforementioned mould.The method of configuration is unqualified.Fig. 2 is the figure of the example of the 1st operation in the manufacturing process of expression semiconductive resin encapsulation.Among Fig. 2,10 is mold release film, and 24a is that film rolls out device, and 24b is the film devices for taking-up, and 20 is the patrix of mould, and 21 is the counterdie of mould, and 22 is the chamber, and 30 is the plunger of transfer molding machine, and 40 is semiconductor chip, and 41 is substrate, and 42 is distribution, and 50 is encapsulant.
Shown in Fig. 2 a, configuration mold release film 10 between the patrix 20 of the mould of opening and counterdie 21.At this moment, with regard to mold release film 10, roll out at film under the effect of device 24a and film devices for taking-up 24b, be applied in certain force of strain.
The tension force that puts on mold release film 10 is converted into tensile stress and is preferably 0.2～2MPa.If tension force is lower than 0.2MPa (tensile stress conversion), is easy to make mold release film 10 to produce lax so or on the Width of mold release film 10, produces fold.On the other hand, surpass 2MPa (tensile stress conversion) if put on the tension force of mold release film 10, so can't be successfully with mold release film 10 vacuum suction in mould inner surface, the mould followability reduces sometimes.
Then, the exhaust outlet (not diagram) in the chamber face that is arranged at patrix 20 attracts air, discharges the air between mold release film 10 and the patrix 20.Thus, mold release film 10 vacuum suction are in the die joint and the chamber face (Fig. 2 b) of patrix 20.The chamber face is meant the face in the chamber 22 that constitutes patrix 20.Die joint is meant, when patrix 20 is closed with counterdie 21, and the face that patrix 20 and counterdie 21 contact with each other.
Then, the semiconductor chip 40 that will be fixed in substrate 41 is disposed at counterdie 21 (Fig. 2 c), matched moulds (Fig. 2 d).Generation for the side fold that suppresses the semiconductive resin encapsulation after the aforesaid sealing also can reduce adjustment conditions of molding such as mold clamping force in the unquestioned scope of burr.
With regard to the temperature of mould, as long as the temperature for heat cured encapsulant being solidified so just is not particularly limited.With regard to the temperature of mould, be under the situation of epoxy resin in the principal component of encapsulant, be preferably 160～200 ℃, more preferably 170～180 ℃.From the degree of depth in the die joint of mould 22 deep to the chamber, though also relevant with the size of semiconductor chip 40, be about 0.2～2mm, be preferably 0.3～1mm.With regard to mold release film 10, also can after preheating, be disposed at the position shown in Fig. 2 a.Also can be with encapsulant 50 preheatings.
In Fig. 2, though after configuration mold release film 10, the semiconductor chip 40 that will be fixed in substrate 41 is disposed at counterdie 21, and being somebody's turn to do order also can be conversely.
In the 2nd operation, come sealing semiconductor chips 40 with encapsulant 50.Fig. 3 is the figure of the example of the 2nd operation in the manufacturing process of expression semiconductive resin encapsulation.Among Fig. 3, with Fig. 2 define symbol similarly.
As shown in Figure 3, rise, will under heat conducting effect, become more than the softening point and become aqueous encapsulant 50 and be expelled in the chamber 22 from mould by making plunger 30.Under the state of ascending plunger 30, under authorized pressure, keep the stipulated time, encapsulant 50 is solidified.At this moment, according to the mode that in the semiconductive resin after the sealing described later encapsulation 61, does not produce moulding bad (transfer printing on surface is bad, warpage, shrink mark, space, burr), adjust injection speed, keep-up pressure and the retention time.Preferably keep-up pressure and be for example 1～12MPa.
In the 3rd operation, mold release film is peeled off from hermetically sealed semiconductor chip.Fig. 4 is the figure of the example of the 3rd operation in the manufacturing process of expression semiconductive resin encapsulation.Among Fig. 4,60 is hermetically sealed semiconductor chip, and 61 are the semiconductive resin encapsulation, and 62 is runner.Other symbol then similarly defines with Fig. 2.
By patrix 20 and counterdie 21 are opened, with mold release film 10 from hermetically sealed semiconductor chip 60 demouldings.With regard to mold release film 10, because therefore the release property excellence can easily be peeled off from hermetically sealed semiconductor chip 60.In addition, with regard to mold release film 10, also can be easily from patrix 20 demouldings of mould.With regard to hermetically sealed semiconductor chip 60, thereby, runner 62 becomes semiconductive resin encapsulation 61 by being cut away.
After the 3rd operation,, can in mould, dispose new mold release film once more in order to carry out following sealing process continuously.Dispose new film once more and be meant, after hermetically sealed semiconductor chip 60 is peeled off recovery, substitute the mold release film 10 that uses up, new mold release film 10 is configured between patrix 20 and the counterdie 21, make Fig. 2 a and represent such state.Fig. 5 is illustrated in the figure that the 3rd operation is disposed at new mold release film the example of the operation in the mould afterwards once more.Symbol among Fig. 5 also similarly defines with Fig. 2.
For example, as shown in Figure 5, can be by on one side batching the mold release film 10 that uses up by film devices for taking-up 24b, by film roll out device 24a (to patrix 20 and counterdie 21 between) and roll out new mold release film 10 on one side, thereby new mold release film 10 is disposed once more.
In the present embodiment, for the semiconductive resin encapsulation,, make but also can wait according to compression forming, injection moulding although understand the example of making according to transfer molding.For example, under the situation of making the semiconductive resin encapsulation according to compression forming, can use mold release film of the present invention, substitute document (" the shaping Ji Intraoperative (forming technique of electronic unit encapsulation) of the special collection Electricity product パ of portion Star ケ one ジ ", processing and forming, the 20th volume, No. 5,2008,276～287 pages) in disclosed mold release film.
So, mold release film 10 of the present invention has stepped construction symmetrical for central core.Thus, be difficult to produce: when being disposed at mold release film in the mould, the distortion such as warpage of mold release film, fold.In addition, the substrate layer C (intermediate layer) of mold release film 10 is if the fatty polyamide that contains the excellent strength under the high temperature as principal component, so also is difficult to produce the vertical fold under the mold temperature.
In addition, by the aggregate thickness of outermost layer A and the adhesive linkage B ratio with respect to the gross thickness of mold release film is made as below the certain value, also can suppress the fold that the side produced (side fold) of semiconductive resin encapsulation.
Further, mold release film 10 of the present invention, because the mould followability is good, release property even therefore carry out sealing process continuously, also can make the stable resin ground in the mould flow.In addition, mold release film 10 of the present invention can stably be kept the high release property for hermetically sealed semiconductor chip 40.Therefore, can obtain: dimensional accuracy is good, and the few semiconductive resin encapsulation of bad orders such as burr, depression.
Embodiment
(1) the outermost layer A modulation of material
Make the copolymer of 4-methyl-1-pentene and 1-decene by conventional method.1-decene content is 2.5 quality %.Below also this copolymer is called " A-1 ".
(2) the adhesive linkage B modulation of material
The manufacturing of modification 4 methyl 1 pentene copolymer
The copolymer (content of Diarene 168 is 6.5 quality %) for preparing 4-methyl-1-pentene and Diarene 168 (Mitsubishi Chemical Ind's system, the mixture of carbon number 16 and 18 alpha-olefin) by conventional method.
Utilize Henschel mixer, with the maleic anhydride of the aforementioned copolymer of 98.8 mass parts, 1 mass parts and as 2 of 0.2 mass parts of organic peroxide, 5-dimethyl-2,5-two (tert-butyl hydroperoxide) hexane mixes.Then, adopt 280 ℃ of temperature with mixing this mixture of double screw extruder.Thus, the modification 4 methyl 1 pentene copolymer that has obtained by modified by maleic acid anhydride graft.The percent grafting of this modification 4 methyl 1 pentene copolymer is 0.9 quality %.
The adhesive linkage B modulation of material
Utilize Henschel mixer, with the butene-1 copolymer of the copolymer (Diarene 168 content 6.5 quality %) of the 4-methyl-1-pentene of the modification 4 methyl 1 pentene copolymer of 25 mass parts that obtain in the preceding operation, 50 mass parts and Diarene 168 (Mitsubishi Chemical Ind's system, the mixture of carbon number 16 and 18 alpha-olefin), 25 mass parts, mixed in 3 minutes as the Irganox 1010 (vapour crust corporate system) of 0.10 mass parts of stabilizer and calcium stearate (the synthetic Co., Ltd. of the three total machines system) low speed rotation of 0.03 mass parts.Then, use double screw extruder to extrude this mixture, thereby obtain adhesive linkage B with resin (below be also referred to as " B-1 ") at 280 ℃.
(3) the substrate layer C preparation of material
As the 1st fatty polyamide resin (being also referred to as " C-1 "), prepared polyamide 6 (Dongli Ltd.'s system, trade name Amilan CM1041LO, 225 ℃ of fusing points).
As the 2nd fatty polyamide resin (being also referred to as " C-2 "), prepared polyamide 66 (Asahi Chemical Corp's system, trade name Leona 1700S, 265 ℃ of fusing points).
As the 3rd fatty polyamide resin (being also referred to as " C-3 "), prepared polyamide 66 (E.I.Du Pont Company's system, trade name Zytel 42A, 262 ℃ of fusing points).
[embodiment 1]
Use material as raw material aforesaid each layer, use T-mould (T die) make-up machine coextrusion, thereby produce the mold release film of the width 400mm that does not stretch.The structure of mold release film is made 3 kinds of 5 layers of structures of A-1/B-1/C-1/B-1/A-1, and the thickness of each layer is made as 15/5/25/5/15 μ m (gross thickness 65 μ m).
As shown in Figure 2, between patrix 20 and counterdie 21, disposed the mold release film 10 that is obtained.Chamber 22 in patrix 20 and the counterdie 21, be 0.8mm apart from the degree of depth in the deep of mould die joint.At this moment, be the mode of 1MPa according to tensile stress, roll out device 24a and film devices for taking-up 24b by film and adjust the tension force that puts on mold release film 10.
Then, shown in Fig. 2 b, make mold release film 10 vacuum suction in the die joint of patrix 20.Then, the semiconductor chip 40 that will be fixed in substrate 41 is disposed at counterdie 21 (Fig. 2 c), carries out matched moulds (Fig. 2 d).The mold temperature of this moment is set at 175 ℃.As encapsulant 50, use commercially available semiconductor encapsulating epoxy resin moulding material.
As shown in Figure 3, by plunger 30 injections: under heat conducting effect, become and become aqueous encapsulant 50 more than the softening point from mould.Then, kept 120 seconds, encapsulant 50 is solidified at pressure 12MPa.Mold release film 10 from hermetically sealed semiconductor chip 60 demouldings, obtained semiconductive resin encapsulation 61 thereafter.
Estimate the semiconductive resin encapsulation 61 obtained and the mold release film 10 after the sealing by the following method.
I) release property
Estimate the release property that mold release film encapsulates from semiconductive resin by following benchmark.
Zero: mold release film is peeled off in die sinking naturally
△: the part of mold release film residues on semiconductive resin encapsulation 61 or the mould
*: mold release film is connected airtight on hermetically sealed semiconductor chip or mould
Ii) splitting
Mold release film during by the following benchmark evaluation demoulding is at the generation state corresponding to the splitting of the part of semiconductive resin encapsulation.
Zero: between outermost layer A and substrate layer C, do not have splitting
△: between outermost layer A and substrate layer C, have splitting minutely
*: between outermost layer A and substrate layer C, there is significant splitting
Iii) end face fold (vertical fold)
By the visual state that encapsulates the fold of end face according to following benchmark evaluation semiconductive resin.
Zero: do not have fully
*: there is the transfer printing of fold at the encapsulation end face
Iv) side fold
Estimate the state of the fold that the side (except pore portion and gate part) of semiconductive resin encapsulation 61 produced according to following method.
Fig. 6 is the cutaway view of the example of the side fold degree of depth assay method of expression semiconductor packages 61.That is, cut out the section perpendicular to end face of semiconductive resin encapsulation 61 by slicing machine (dicer).Thus, obtain the section of semiconductive resin encapsulation 61 as shown in Figure 6.Then, read microscope by utilization and observe, in the section that obtains, determine: the reference position (line) that the side (imaginary side) that does not have the semiconductive resin encapsulation under the situation of side fold in imagination and substrate 41 intersect.Measure then: the sunk part of the side of semiconductive resin encapsulation, apart from reference position (line), with the depth d of 41 parallel directions of substrate.According to the depth value of the side fold of so measuring, stipulate the degree of side fold as described below.
◎: the degree of depth less than 100 μ m of side fold
Zero: the degree of depth of side fold is the above and less than 200 μ m of 100 μ m
△: the degree of depth of side fold is the above and less than 300 μ m of 200 μ m
*: the degree of depth of side fold is more than the 300 μ m
If the degree of depth of side fold is big, so not only the bad order of semiconductive resin encapsulation 61 is noticeable easily, and when the demoulding, semiconductive resin encapsulation 61 can successfully not peeled off from mold release film 10, and it is bad to be easy to generate the demoulding.Thus, the degree of depth of side fold is the smaller the better.
V) warpage
Estimate the warpage state of mold release film by following benchmark.
Zero: do not have fully
△: warpage is no problem in practicality minutely
*: warpage can't be used greatly
Vi) crack
About the generation state of the pin hole of the mold release film 10 after using and the resin attachment state of mold cavity inwall,, estimate by following benchmark according to visualization.
Zero: the crack that does not have the pin hole shape
△: though have the crack of pin hole shape slightly, the sealing resin that is leaked is not attached to mould
[embodiment 2]
Except the thickness with each layer is made as 10/5/15/5/10 μ m (gross thickness 45 μ m), operation similarly to Example 1, preparation mold release film 10.Use this mold release film 10 and operation similarly to Example 1, make semiconductive resin encapsulation 61, and estimate.
[embodiment 3]
Except the thickness with each layer is made as 10/5/20/5/10 μ m (gross thickness 50 μ m), operation similarly to Example 1, preparation mold release film 10.Use this mold release film 10 and operation similarly to Example 1, make semiconductive resin encapsulation 61, and estimate.
[embodiment 4]
Except the thickness with each layer is made as 10/3/24/3/10 μ m (gross thickness 50 μ m), operation similarly to Example 11, preparation mold release film 10.Use this mold release film 10 and operation similarly to Example 1, make semiconductive resin encapsulation 61, and estimate.
[embodiment 5]
Except the material with substrate layer C replaces with C-2, operation similarly to Example 1, preparation mold release film 10.Use this mold release film 10 and operation similarly to Example 1, make semiconductive resin encapsulation 61, and estimate.
[embodiment 6]
Except the material with substrate layer C is made as C-2, operation similarly to Example 2, preparation mold release film 10.Use this mold release film 10 and operation similarly to Example 1, make semiconductive resin encapsulation 61, and estimate.
[embodiment 7]
Except the material with substrate layer C is made as C-2, operation similarly to Example 3, preparation mold release film 10.Use this mold release film 10 and operation similarly to Example 1, make semiconductive resin encapsulation 61, and estimate.
[embodiment 8]
Except the material with substrate layer C is made as C-2, operation similarly to Example 4, preparation mold release film 10.Use this mold release film 10 and operation similarly to Example 1, make semiconductive resin encapsulation 61, and estimate.
[embodiment 9]
Except the material C-1 with substrate layer C is made as C-2, and the thickness of each layer is made as 6/3/32/3/6 μ m (gross thickness 50 μ m) in addition, operation similarly to Example 1, preparation mold release film 10.Use this mold release film 10 and operation similarly to Example 1, make semiconductive resin encapsulation 61, and estimate.
[embodiment 10]
Except the material with substrate layer C is made as C-3, operation similarly to Example 3, preparation mold release film 10.Use this mold release film 10 and operation similarly to Example 1, make semiconductive resin encapsulation 61, and estimate.
[embodiment 11]
Except the material with substrate layer C is made as C-3, operation similarly to Example 4, preparation mold release film 10.Use this mold release film 10 and operation similarly to Example 1, make semiconductive resin encapsulation 61, and estimate.
[embodiment 12]
Except the material with substrate layer C is made as C-3, operation similarly to Example 9, preparation mold release film 10.Use this mold release film 10 and operation similarly to Example 1, make semiconductive resin encapsulation 61, and estimate.
[comparative example 1]
The structure of mold release film is made as 2 kinds of 3-tier architectures of A-1/C-1/A-1, make the structure that does not contain adhesive linkage B, and the thickness of each layer is 25/15/25 μ m (gross thickness 65 μ m), in addition, operation similarly to Example 1 obtains the not mold release film of the width 400mm of stretching.Use this mold release film and operation similarly to Example 1, make the semiconductive resin encapsulation, and estimate.
[comparative example 2]
Except the thickness with each layer is made as 15/15/15 μ m (gross thickness 45 μ m), similarly operate with comparative example 1, obtain mold release film 10.Use this mold release film and operation similarly to Example 1, make the semiconductive resin encapsulation, and estimate.
[comparative example 3]
The structure of mold release film is made as 3 kinds of 3-tier architectures of A-1/B-1/C-2, make asymmetrical stepped construction for central core, and the thickness of each layer is made as 20/5/25 μ m (gross thickness 50 μ m), in addition, operation similarly to Example 1 obtains the not mold release film of the width 400mm of stretching.Use this mold release film and operation similarly to Example 1, make the semiconductive resin encapsulation, and estimate.
These be the results are summarized in table 1.
[table 1]
Figure BPA00001317709200211
As shown in table 1, the mold release film of the present invention of embodiment 1～12 release property excellence not only as can be known, and can suppress splitting, fold, warpage and crack simultaneously.
Comprise the mold release film of the embodiment 5～12 of polyamide 66 (PA66) as for substrate layer C, the mold release film of the embodiment 6～12 that the thickness of outermost layer A and adhesive linkage B is little wherein, the side fold of semiconductive resin encapsulation significantly reduces as can be known.Can think this be because, the thermal endurance height of substrate layer C, and the lower outermost layer A of compressive yield stress and adhesive linkage B are thin.Just, if substrate layer C is thin excessively, also can produce small crack sometimes.Can think that this is because if substrate layer C is thin, be difficult to keep the intensity of mold release film itself so.
Relative therewith, the mold release film of comparative example 1～3 then can not suppress splitting, fold, warpage and crack simultaneously as can be known.Do not have the comparative example 1 of adhesive linkage B and 2 mold release film as can be known then being wanting in of release property, splitting and crack, wherein the splitting significance difference.Further have for central core mold release film as can be known, not only produce warpage, and release property is also significantly low for the comparative example 3 of asymmetrical stepped construction.
The application requires the priority based on the Japanese Patent Application 2008-219815 of application on August 28th, 2008.The content of being put down in writing in this application specification and the accompanying drawing is all quoted in present specification.
Utilize possibility on the industry
With regard to mold release film of the present invention, with the demoulding excellence of semiconductive resin encapsulation, and be difficult to produce warpage, fold. By using this mold release film to make the semiconductive resin encapsulation, can provide dimensional accuracy good semiconductive resin encapsulation. Thus, the present invention can be used for the manufacturing of semiconductive resin encapsulation.
Description of reference numerals
10 is mold release film, and 12 is substrate layer C, and 13 is bonding layer B, 14 are the most outer A, and 20 is the patrix of mould, and 21 is the counterdie of mould, 22 is the chamber, and 24a is that film rolls out device, and 24b is the film devices for taking-up, 30 is plunger (plunger), and 40 is semiconductor chip, and 41 is substrate, 42 be distribution, and 50 are the sealing material, 60 semiconductor chips for having sealed, 61 is semiconductor packages, and 62 is runner (runner).
Claims (according to the modification of the 19th of treaty)
1. semiconductive resin encapsulates the die for manufacturing mold release film, it has: the substrate layer C that one deck is above, with described substrate layer C clamping, contain a pair of outermost layer A of 4-methyl-1-pentene based polymer, with described substrate layer C and the bonding a pair of adhesive linkage B of described outermost layer A as principal component.
2. mold releasability film according to claim 1,
Described substrate layer C comprises polyamide,
Described adhesive linkage B comprises: the modification 4-methyl-1-pentene based polymer that the modification of 4-methyl-1-pentene based polymer is obtained by the acid anhydrides of unsaturated carboxylic acid and/or unsaturated carboxylic acid.
3. mold releasability film according to claim 2,
Described adhesive linkage B comprises: the modification 4-methyl-1-pentene based polymer that the graft modification of 4-methyl-1-pentene based polymer is obtained by maleic anhydride.
4. mold releasability film according to claim 2, described polyamide are polyamide 6 or polyamide 66.
5. mold releasability film according to claim 1, described substrate layer C is one deck.
6. mold releasability film according to claim 1, the aggregate thickness of described a pair of outermost layer A and described a pair of adhesive linkage B are below the 32 μ m.
7. (revise afterwards) mold releasability film according to claim 1, the stepped construction of described mold releasability film is symmetry for described substrate layer C.
8. (revise afterwards) manufacture method of semiconductive resin encapsulation, comprise following operation:
The operation of configuring semiconductor chip in mould,
The operation of the described mold releasability film of configuration claim 1 between described semiconductor chip and described mould inner surface,
By injecting sealing material in described mould, thereby obtain the operation of hermetically sealed semiconductor chip, and
The operation that described hermetically sealed semiconductor chip is peeled off from described mold releasability film.
9. (revise afterwards) the described mold releasability film of claim 1 that uses in the manufacturing process of semiconductive resin encapsulation, the manufacturing process of described semiconductive resin encapsulation comprises following operation:
The operation of configuring semiconductor chip in mould,
The operation of the described mold releasability film of configuration between described semiconductor chip and described mould inner surface,
By injecting sealing material in described mould, thereby obtain the operation of hermetically sealed semiconductor chip,
The operation that described hermetically sealed semiconductor chip is peeled off from described mold releasability film.

Claims (9)

1. semiconductive resin encapsulates the die for manufacturing mold release film, it has: the substrate layer C that one deck is above, with described substrate layer C clamping, contain a pair of outermost layer A of 4-methyl-1-pentene based polymer, with described substrate layer C and the bonding a pair of adhesive linkage B of described outermost layer A as principal component.
2. mold releasability film according to claim 1,
Described substrate layer C comprises polyamide,
Described adhesive linkage B comprises: the modification 4-methyl-1-pentene based polymer that the modification of 4-methyl-1-pentene based polymer is obtained by the acid anhydrides of unsaturated carboxylic acid and/or unsaturated carboxylic acid.
3. mold releasability film according to claim 2,
Described adhesive linkage B comprises: the modification 4-methyl-1-pentene based polymer that the graft modification of 4-methyl-1-pentene based polymer is obtained by maleic anhydride.
4. mold releasability film according to claim 2, described polyamide are polyamide 6 or polyamide 66.
5. mold releasability film according to claim 1, described substrate layer C is one deck.
6. mold releasability film according to claim 1, the aggregate thickness of described a pair of outermost layer A and described a pair of adhesive linkage B are below the 32 μ m.
7. mold releasability film according to claim 1, the stepped construction of described mold release film is symmetry for described substrate layer C.
8. the manufacture method of semiconductive resin encapsulation comprises following operation:
The operation of configuring semiconductor chip in mould,
The operation of the described mold releasability film of configuration claim 1 between described semiconductor chip and described mould inner surface,
By injecting sealing material in described mould, thereby obtain the operation of hermetically sealed semiconductor chip, and
The operation that described hermetically sealed semiconductor chip is peeled off from described mold release film.
9. the described mold releasability film of claim 1 that in the manufacturing process of semiconductive resin encapsulation, uses, the manufacturing process of described semiconductive resin encapsulation comprises following operation:
The operation of configuring semiconductor chip in described mould,
The operation of the described mold releasability film of configuration between described semiconductor chip and described mould inner surface,
By injecting sealing material in described mould, thereby obtain the operation of hermetically sealed semiconductor chip,
The operation that described hermetically sealed semiconductor chip is peeled off from described mold release film.
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Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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