KR101682934B1 - Release film for memory semiconductor package mold - Google Patents

Release film for memory semiconductor package mold Download PDF

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Publication number
KR101682934B1
KR101682934B1 KR1020160032199A KR20160032199A KR101682934B1 KR 101682934 B1 KR101682934 B1 KR 101682934B1 KR 1020160032199 A KR1020160032199 A KR 1020160032199A KR 20160032199 A KR20160032199 A KR 20160032199A KR 101682934 B1 KR101682934 B1 KR 101682934B1
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South Korea
Prior art keywords
layer
mold
semiconductor package
thickness
release film
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KR1020160032199A
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Korean (ko)
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김광원
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김광원
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Priority to KR1020160032199A priority Critical patent/KR101682934B1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B29C33/68—Release sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/16—Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/21—Anti-static
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/30—Properties of the layers or laminate having particular thermal properties
    • B32B2307/306—Resistant to heat
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/714—Inert, i.e. inert to chemical degradation, corrosion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/14—Corona, ionisation, electrical discharge, plasma treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2367/00—Polyesters, e.g. PET, i.e. polyethylene terephthalate

Abstract

The present invention relates to a release film for a memory semiconductor package mold including: a base material layer; antistatic layers formed on the upper and lower layers of the base material layer; a mat layer formed on one surface of the base material layer where the antistatic layer is formed; a heat resistant layer formed on the upper layer of the mat layer; and a mold contamination prevention layer formed on the other surface of the base material layer where the antistatic layer is formed. The release film for a memory semiconductor package mold according to the present invention is excellent in heat resistance and is not deformed even at a high temperature. Because no oligomer flows out of the release film, manufacturing process efficiency can be improved without semiconductor package mold and semiconductor contamination.

Description

RELEASE FILM FOR MEMORY SEMICONDUCTOR PACKAGE MOLD FOR MEMORY SEMICONDUCTOR PACKAGE MOLD

More particularly, the present invention relates to a release film for a memory semiconductor package mold, which is excellent in heat resistance and does not deform even at a high temperature and does not leak out to the outside of the release film. Therefore, To a release film for a memory semiconductor package mold that improves process efficiency.

Molding methods using EMC (epoxy molding compound) are the most widely used in the packaging process of memory semiconductors, because EMC has lower thermal stability and reliability than ceramics, but has the advantages of low cost and high productivity.

In addition, since EMC must meet various properties such as moldability, heat resistance, moisture resistance, corrosion resistance, adhesiveness, electrical insulation, high tensile and bending properties, and markability, it is made of a mixture of various materials such as resin, hardener, binder and colorant .

The various properties required for EMC are contradictory to each other, and in particular, they must satisfy the conflicting characteristics of adhesion and releasability at the same time. The reason for the adhesion is that the stability of the package, that is, the mechanical stability and the electrical stability, can be secured only when the adhesion to the silicon die or the metal lead frame is good. For this purpose, it is necessary to use a low-molecular-weight resin having good flowability or to use a small amount of wax. However, when a low-molecular-weight resin is used or the amount of wax is small, There is a problem that sticking to the mold mold occurs, or contamination of the mold mold due to the residual EMC occurs, so that it is necessary to periodically clean the surface of the mold.

In order to solve the above problems, the mold resin is injected into the mold in the state that the resin molding portion (cavity surface) of the mold is covered with the release film, and the resin that forms the semiconductor package without directly contacting the mold resin on the cavity surface of the mold Techniques using release films for molds have been developed and achieved certain results.

However, in the conventional release film, since the oligomer remaining in the release film due to heat transferred during the packaging process flows out to the outside of the release film to contaminate the semiconductor and the mold, it is necessary to replace the release film periodically and clean the semiconductor package mold , There is a problem that the release film is deformed and unevenness is formed on the EMC molding surface.

Korean Patent Publication No. 10-2009-0018032 (2009.02.19). Korean Patent Publication No. 10-2011-0044243 (April 28, 2011).

An object of the present invention is to provide a release film for a memory semiconductor package mold in which the oligomer does not flow out of the release film while maintaining heat resistance.

An object of the present invention is to provide an antistatic layer comprising a substrate layer, an antistatic layer formed on the upper and lower surfaces of the substrate layer, a mat layer formed on one side of the base layer on which the antistatic layer is formed, And a mold contaminant prevention layer formed on the other surface of the substrate layer on which the antistatic layer is formed.

According to a preferred feature of the present invention, the substrate layer is formed to a thickness of 36 to 50 micrometers, and is made of polyethylene terephthalate on both sides corona treated or polyethylene terephthalate on both sides coated with polyurethane.

According to a further preferred feature of the present invention, the antistatic layer is formed to a thickness of 0.1 to 1.0 micrometer and comprises at least one selected from the group consisting of poly (3,4-ethylenedioxythiophene), polypyrrole and polyaniline .

According to a further preferred feature of the present invention, the mat layer is formed to a thickness of 3 to 15 micrometers, and comprises 100 parts by weight of acrylic resin, 10 to 30 parts by weight of calcium carbonate, 10 to 30 parts by weight of hollow silica or polymethylmethacrylate spherical particles 10 To 30 parts by weight, 0.05 to 0.4 parts by weight of a silane coupling agent and 0.5 to 8 parts by weight of an isocyanate curing agent.

According to a further preferred feature of the present invention, the surface of the mat layer is formed with irregularities having a degree of 60 degree gloss of 10 to 17%.

According to an even more preferred feature of the present invention, it is assumed that the unevenness has a surface roughness Ra of 0.7 to 1.5, Rq of 1.0 to 2.0, Rz of 7 to 15, and Rsm of 100 to 200.

According to a further preferred feature of the present invention, the heat resistant layer is formed to a thickness of 0.1 to 3 micrometers and is made of silicon or fluorine-graft copolymerized acrylate.

According to a further preferred feature of the present invention, the mold anti-fouling layer is formed to a thickness of 0.1 to 3 micrometers, and is made of silicon or fluorine-graft copolymerized acrylate.

According to a further preferred feature of the present invention, the release film for the memory semiconductor package mold is heat-treated at a temperature of 200 ° C for 30 to 100 seconds.

The release film for a memory semiconductor package mold according to the present invention has excellent heat resistance and is not deformed even at a high temperature. Since the oligomer does not flow out to the outside of the release film, the efficiency of the manufacturing process can be improved without contaminating the semiconductor package mold and the semiconductor. It shows excellent effect.

1 is a cross-sectional view showing a release film for a memory semiconductor package mold according to the present invention.
2 is a state diagram illustrating a process of applying a release film to a memory semiconductor package mold according to the present invention.
3 is a cross-sectional view of a mat layer applied to a release film for a memory semiconductor package mold according to the present invention.
4 is a photograph showing the state of EMC after applying a release film for a memory semiconductor package mold manufactured through Example 1 and Comparative Example 1 of the present invention to a semiconductor package manufacturing process using EMC.

Hereinafter, preferred embodiments of the present invention and physical properties of the respective components will be described in detail with reference to the accompanying drawings. However, the present invention is not limited thereto, And this does not mean that the technical idea and scope of the present invention are limited.

A release film for a memory semiconductor package mold according to the present invention comprises a base layer 10, an antistatic layer 20 formed on the upper and lower surfaces of the base layer 10, a base layer 20 on which the antistatic layer 20 is formed, A heat resistant layer 40 formed on the upper surface of the mat layer and a mold contamination formed on the other surface of the base layer 10 on which the antistatic layer 20 is formed, Blocking layer 50.

The base layer 10 is a base layer of a release film for a memory semiconductor package mold according to the present invention. The base layer 10 is formed to a thickness of 36 to 50 micrometers. The base layer 10 is made of polyethylene terephthalate having both corona- Coated polyethylene terephthalate.

When the base layer 10 is made of polyethylene terephthalate corona-treated on both sides or polyethylene terephthalate coated on both sides of polyurethane, the antistatic layer 20 is prevented from being peeled off, The generation of dust and foreign matter due to peeling off of the mat layer 30, the heat resistant layer 40 and the mold antifouling layer 50 laminated on the antistatic layer 20 or the antistatic layer 20 is suppressed, Can be prevented from being contaminated.

The base layer 10 is formed to have a thickness of 36 to 50 micrometers to withstand a high temperature of 160 to 180 DEG C for 2 to 3 minutes generated in the process of manufacturing a memory semiconductor package. If the thickness of the substrate layer 10 is less than 36 micrometers, surface wrinkling occurs when exposed to the above temperature for 2 minutes or more. When the thickness of the base layer 10 exceeds 50 micrometers, the thickness of the epoxy mold is relatively low .

In addition, since the manufacturing process of the memory semiconductor package proceeds at a high temperature, the release film often breaks or tears in the process of manufacturing the memory semiconductor package. The base layer 10 formed with the above- (MD) of 20 to 30 kg / mm 2 and a width direction (TD) of 20 to 30 kg / mm 2 , wherein the elongation conditions are 100 to 250% in the longitudinal direction (MD) and 70 to 140% So that there is no break or tear in the manufacturing process of the memory semiconductor package.

The antistatic layer 20 is formed on the upper surface and the lower surface of the substrate layer 10 and has a thickness of 0.1 to 1.0 micrometer on the upper and lower surfaces of the substrate layer 10, , 4-ethylenedioxythiophene), polypyrrole and polyaniline.

As described above, the antistatic layer 20 made of the conductive polymer such as poly (3,4-ethylenedioxythiophene), polypyrrole and polyaniline not only exhibits an excellent antistatic effect but also is formed as a separate layer, The antistatic layer 20 can exhibit the antistatic performance of 10 3 to 10 4 Ω / m 2 , and the antistatic property of the antistatic layer 20 can be maintained .

If the thickness of the antistatic layer 20 is less than 0.1 micrometer, the effect is insignificant. If the thickness of the antistatic layer 20 exceeds 1.0 micrometer, the thickness and manufacturing cost of the product increase It is not desirable.

The mat layer 30 is formed to a thickness of 3 to 15 micrometers on one side of the substrate layer 10 on which the antistatic layer 20 is formed and is formed of 100 parts by weight of an acrylic resin, 10 to 30 parts by weight of spherical particles of hollow silica or polymethylmethacrylate, 0.05 to 0.4 parts by weight of a silane coupling agent and 0.5 to 8 parts by weight of an isocyanate curing agent. In the base layer 10, And forms a smooth unevenness on the surface of the epoxy mold of the memory semiconductor package.

Further, since the mat layer 30 contains spherical particles of hollow silica or polymethylmethacrylate to protect the base layer 30 from the heat transferred from the mold, the release layer 30 for the memory semiconductor package mold, which has excellent heat resistance, .

Since the epoxy mold surface of the memory semiconductor package has to be formed with the matte unevenness as described above, unevenness is formed on the surface of the mat layer 30 in order to satisfy the above conditions. At this time, The surface roughness Ra is 0.7 to 1.5, Rq 1 is 1.0 to 2.0, Rz 7 to 15 and Rsm 100 to 200 are preferable.

The cross section of the mat layer was photographed and is shown in FIG. 3 below.

The heat resistant layer 40 is formed on the upper surface of the mat layer 30 to a thickness of 0.1 to 3 micrometers and is made of silicon or fluorine graft copolymerized acrylate. The epoxy mold surface is prevented from being contaminated and the semiconductor package is easily detached from the lower mold after the manufacture of the memory semiconductor package.

The mold antifouling layer 50 is formed on the other surface of the base layer 10 on which the antistatic layer 20 is formed to a thickness of 0.1 to 3 micrometers and is made of silicon or fluorine graft copolymerized acrylate. Prevents leakage of the oligomer due to contamination of the upper mold for manufacturing the semiconductor package, and allows the memory semiconductor package to be easily detached from the upper mold after the memory semiconductor package is manufactured.

The laminate composed of the base layer 10, the antistatic layer 20, the matte layer 30, the heat resistant layer 40 and the mold contaminant prevention layer 50 is subjected to a heat treatment at a temperature of 200 DEG C for 30 to 100 seconds The shrinkage percentage of the release film heat-treated for the above-mentioned temperature and time is 0.4 to 5.0% in MD (Machine Direction), and TD (Tensile Direction, width direction) 0.1 to 3.0%.

In addition, since the heat-treated release film does not shrink even when exposed to a temperature of 160 to 180 DEG C for 2 to 3 minutes, which is a heating temperature of a mold for manufacturing a memory semiconductor package, Wrinkles do not occur.

Hereinafter, physical properties of a release film for a memory semiconductor package mold according to the present invention will be described with reference to examples.

≪ Example 1 >

A polyethylene terephthalate on both sides corona treated was made to have a thickness of 38 micrometers to prepare a base layer, and 0.2 micrometer-thick poly (3,4-ethylenedioxythiophene) was laminated on the upper and lower surfaces of the base layer The antistatic layer was formed on one side of the base layer on which the antistatic layer was formed. The antistatic layer was formed to a thickness of 10 micrometers. 100 parts by weight of acrylic resin, 20 parts by weight of calcium carbonate, 25 parts by weight of hollow silica, 0.2 parts by weight of silane coupling agent And 4 parts by weight of an isocyanate curing agent, and having a 60 degree gloss of 10 to 17%. The mat layer is formed to a thickness of 0.3 micrometer on the upper surface of the mat layer, and fluorine graft A heat resistant layer made of copolymerized acrylate is formed, and on the other surface of the substrate layer on which the antistatic layer is formed, a thickness of 0.3 micrometers is formed, A graft to form a mold contamination prevention layer made of the acrylate copolymer to prepare a laminated body, and heat-treating the laminate at a temperature of 200 ℃ for 100 seconds to prepare a release film for a memory semiconductor package mold.

≪ Comparative Example 1 &

A base layer is formed of polyethylene terephthalate having a thickness of 38 micrometers, and a mat layer having a thickness of 10 micrometers is formed on one surface of the base layer to form a concavo-convex having a degree of 60 degree gloss of 10 to 17% A heat-resistant layer formed on the upper surface of the mat layer with a thickness of 0.3 micrometers and composed of acrylate graft-copolymerized with fluorine, and a mold contamination layer made of acrylate graft-copolymerized with silicon on the other surface of the base layer The thickness of the barrier layer was 0.3 .mu.m, and a release film for a memory semiconductor package mold was prepared without a heat treatment.

The release film for the memory semiconductor package mold manufactured through Example 1 and Comparative Example 1 was applied to a semiconductor package manufacturing process using an EMC having a mold temperature of 160 to 180 DEG C and a molding time of 2 to 3 minutes, And is shown in FIG. 4 below.

As shown in FIG. 4, it can be seen that the release film for the memory semiconductor package mold manufactured through Example 1 of the present invention does not cause stains on the surface of the EMC.

Therefore, the release film for the memory semiconductor package mold according to the present invention is excellent in heat resistance and does not deform even at a high temperature. Since the oligomer does not flow out of the release film, the semiconductor package mold and the semiconductor are not contaminated, .

10; The substrate layer
20; Antistatic layer
30; Mat floor
40; Heat resistant layer
50; Mold prevention layer

Claims (9)

A base layer;
An antistatic layer formed on the upper and lower surfaces of the substrate layer;
A mat layer formed on one surface of the substrate layer on which the antistatic layer is formed;
A heat resistant layer formed on an upper surface of the mat layer; And
And a mold contaminant prevention layer formed on the other surface of the substrate layer on which the antistatic layer is formed,
The mat layer is formed to a thickness of 3 to 15 micrometers, and comprises 100 parts by weight of an acrylic resin, 10 to 30 parts by weight of calcium carbonate, 10 to 30 parts by weight of spherical particles of hollow silica or polymethylmethacrylate, 0.05 part of a silane coupling agent To 0.4 part by weight and 0.5 to 8 parts by weight of an isocyanate curing agent,
The surface of the mat layer has concavities and convexities having a degree of 60 degree gloss of 10 to 17%
Wherein the heat resistant layer is formed to a thickness of 0.1 to 3 micrometers and is made of silicon or fluorine graft copolymerized acrylate.
The method according to claim 1,
Wherein the substrate layer is formed to a thickness of 36 to 50 micrometers and comprises polyethylene terephthalate corona-treated on both sides or polyethylene terephthalate coated on both sides of polyurethane.
The method according to claim 1,
Wherein the antistatic layer is formed to a thickness of 0.1 to 1.0 micrometer and comprises at least one selected from the group consisting of poly (3,4-ethylenedioxythiophene), polypyrrole, and polyaniline. .
delete delete The method according to claim 1,
Wherein the unevenness has a surface roughness Ra of 0.7 to 1.5, Rq of 1.0 to 2.0, Rz of 7 to 15 and Rsm of 100 to 200.
delete The method according to claim 1,
Wherein the mold anti-fouling layer is formed to a thickness of 0.1 to 3 micrometers and comprises silicon or fluorine-graft copolymerized acrylate.
The method according to any one of claims 1 to 3, claim 6 and claim 8,
Wherein the release film for the memory semiconductor package mold is heat treated at a temperature of 200 ° C for 30 to 100 seconds.
KR1020160032199A 2016-03-17 2016-03-17 Release film for memory semiconductor package mold KR101682934B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109501074A (en) * 2017-09-14 2019-03-22 衢州市中通化工有限公司 A kind of preparation method of fluorine carbon release agent
KR20190033261A (en) 2017-09-21 2019-03-29 주식회사 포리스 Release film for packaging epoxy molding compound

Citations (6)

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Publication number Priority date Publication date Assignee Title
KR20090018032A (en) 2006-04-25 2009-02-19 아사히 가라스 가부시키가이샤 Mold release film for semiconductor resin mold
KR20110044243A (en) 2008-08-28 2011-04-28 미쓰이 가가쿠 가부시키가이샤 Mold release film for manufacturing semiconductor resin package and semiconductor resin package manufacturing method using same
JP2013129075A (en) * 2011-12-20 2013-07-04 Teijin Dupont Films Japan Ltd In-mold transfer polyester film
KR20140079064A (en) * 2012-12-18 2014-06-26 도레이첨단소재 주식회사 Heat Resistant Silicone Release Film
KR20140092155A (en) * 2013-01-15 2014-07-23 도레이첨단소재 주식회사 Anti-static base film for mold underfill process
KR20150004715A (en) * 2013-07-03 2015-01-13 고병수 Mold release sheet for semiconductor package manufacturing and manufacturing method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090018032A (en) 2006-04-25 2009-02-19 아사히 가라스 가부시키가이샤 Mold release film for semiconductor resin mold
KR20110044243A (en) 2008-08-28 2011-04-28 미쓰이 가가쿠 가부시키가이샤 Mold release film for manufacturing semiconductor resin package and semiconductor resin package manufacturing method using same
JP2013129075A (en) * 2011-12-20 2013-07-04 Teijin Dupont Films Japan Ltd In-mold transfer polyester film
KR20140079064A (en) * 2012-12-18 2014-06-26 도레이첨단소재 주식회사 Heat Resistant Silicone Release Film
KR20140092155A (en) * 2013-01-15 2014-07-23 도레이첨단소재 주식회사 Anti-static base film for mold underfill process
KR20150004715A (en) * 2013-07-03 2015-01-13 고병수 Mold release sheet for semiconductor package manufacturing and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109501074A (en) * 2017-09-14 2019-03-22 衢州市中通化工有限公司 A kind of preparation method of fluorine carbon release agent
CN109501074B (en) * 2017-09-14 2020-10-02 衢州市中通化工有限公司 Preparation method of fluorocarbon release agent
KR20190033261A (en) 2017-09-21 2019-03-29 주식회사 포리스 Release film for packaging epoxy molding compound

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