TWI833987B - Release film and method of producing semiconductor package - Google Patents
Release film and method of producing semiconductor package Download PDFInfo
- Publication number
- TWI833987B TWI833987B TW109130220A TW109130220A TWI833987B TW I833987 B TWI833987 B TW I833987B TW 109130220 A TW109130220 A TW 109130220A TW 109130220 A TW109130220 A TW 109130220A TW I833987 B TWI833987 B TW I833987B
- Authority
- TW
- Taiwan
- Prior art keywords
- release film
- layer
- adhesive layer
- base material
- material layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 238000000034 method Methods 0.000 title description 16
- 239000010410 layer Substances 0.000 claims abstract description 84
- 239000012790 adhesive layer Substances 0.000 claims abstract description 45
- 229920000728 polyester Polymers 0.000 claims abstract description 25
- 125000002947 alkylene group Chemical group 0.000 claims abstract description 11
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 40
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000465 moulding Methods 0.000 claims description 10
- -1 polyethylene Polymers 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 7
- 229920001577 copolymer Polymers 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims 1
- 229920000573 polyethylene Polymers 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 8
- 229920001707 polybutylene terephthalate Polymers 0.000 description 17
- 238000012360 testing method Methods 0.000 description 16
- 239000000203 mixture Substances 0.000 description 14
- BJZYYSAMLOBSDY-QMMMGPOBSA-N (2s)-2-butoxybutan-1-ol Chemical compound CCCCO[C@@H](CC)CO BJZYYSAMLOBSDY-QMMMGPOBSA-N 0.000 description 13
- 239000002216 antistatic agent Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000003431 cross linking reagent Substances 0.000 description 9
- 230000006378 damage Effects 0.000 description 9
- 239000000945 filler Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 229920006243 acrylic copolymer Polymers 0.000 description 7
- 239000000178 monomer Substances 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000003522 acrylic cement Substances 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000037303 wrinkles Effects 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000002091 cationic group Chemical group 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000012756 surface treatment agent Substances 0.000 description 3
- 238000009864 tensile test Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical class C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 150000007974 melamines Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/255—Polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/68—Release sheets
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/50—Adhesives in the form of films or foils characterised by a primer layer between the carrier and the adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Laminated Bodies (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Adhesive Tapes (AREA)
Abstract
Description
本發明是有關於一種脫模膜及半導體封裝的製造方法。 The invention relates to a release film and a method for manufacturing a semiconductor package.
近年來,隨著電子設備、特別是行動電話的薄型化發展,對內置半導體元件等電子零件的半導體封裝亦要求進一步的薄型化。另外,就提高散熱性的觀點而言,代替利用密封樹脂覆蓋電子零件整體的包覆成形成形(Over Molding),採用使電子零件表面的一部分露出的露出成形(露模成形(Exposed Die Molding))的情況亦正在增加。 In recent years, as electronic devices, especially mobile phones, have become thinner, semiconductor packages containing electronic components such as semiconductor elements have also been required to be further thinned. In addition, from the viewpoint of improving heat dissipation, instead of over molding (Over Molding) in which the entire electronic component is covered with sealing resin, exposure molding (Exposed Die Molding) in which a part of the surface of the electronic component is exposed is used. cases are also increasing.
於以成為電子零件的一部分露出的狀態的方式密封電子零件時,需要防止密封材料向電子零件的露出部洩漏(毛邊(flash burr))。因此,進行如下處理:於電子零件的露出的部分貼附具有脫模性的膜(脫模膜)的狀態下進行密封,之後剝離脫模膜使電子零件的表面露出。作為此種脫模膜,例如專利文獻1中記載一種於包含延伸聚酯樹脂膜的基材膜的至少單面積層包含氟樹脂的膜而成的積層膜。 When the electronic component is sealed so that a part of the electronic component is exposed, it is necessary to prevent the sealing material from leaking (flash burr) to the exposed portion of the electronic component. Therefore, a process is performed in which the exposed portion of the electronic component is sealed with a releasable film (release film) attached thereto, and then the release film is peeled off to expose the surface of the electronic component. As such a release film, for example, Patent Document 1 describes a laminated film in which a film containing a fluororesin is laminated on at least a single area of a base film containing a stretched polyester resin film.
[現有技術文獻] [Prior art documents]
[專利文獻] [Patent Document]
[專利文獻1]日本專利特願2005-186740號公報 [Patent Document 1] Japanese Patent Application No. 2005-186740
如所述般,脫模膜於密封步驟後自電子零件的表面剝離。此時,若脫模膜帶電,則剝離時會產生放電,有可能產生電子零件的靜電破壞。 As described above, the release film is peeled off from the surface of the electronic component after the sealing step. At this time, if the release film is charged, discharge will occur during peeling, which may cause electrostatic damage to electronic components.
進而,近年來正在研究於基板上安裝多個封裝後一併密封的技術,為了端子的露出,正在研究使用脫模膜。於該情況下,由於基板上存在各種各樣的封裝,故對脫模膜要求優異的伸長性(模具追隨性)。另外,根據封裝的種類不同,亦有不耐熱的情況,因此要求即便於低溫(例如,150℃以下)下亦顯示出優異的伸長性。 Furthermore, in recent years, technology for mounting a plurality of packages on a substrate and sealing them together has been studied, and the use of a release film to expose terminals has been studied. In this case, since various packages exist on the substrate, the release film is required to have excellent extensibility (mold followability). In addition, depending on the type of package, it may not be heat-resistant, so it is required to show excellent elongation even at low temperatures (for example, 150° C. or lower).
鑑於所述情況,本發明的一態樣的課題在於提供一種抑制電子零件的靜電破壞、且低溫下的伸長性優異的脫模膜。本發明的另一態樣的課題在於提供一種使用該脫模膜的半導體封裝的製造方法。 In view of the above-described circumstances, an aspect of the present invention aims to provide a release film that suppresses electrostatic destruction of electronic components and has excellent extensibility at low temperatures. Another aspect of the present invention aims to provide a method of manufacturing a semiconductor package using the release film.
於用以解決所述課題的手段中包含以下的實施態樣。 Means for solving the above problems include the following embodiments.
<1>一種脫模膜,包括:基材層、黏著層、以及配置於所述基材層與所述黏著層之間的導電層,所述基材層包含含有丁烯結 構與環氧烷結構的聚酯共聚物。 <1> A release film, including: a base material layer, an adhesive layer, and a conductive layer disposed between the base material layer and the adhesive layer, the base material layer containing butylene junction Polyester copolymer with alkylene oxide structure.
<2>一種脫模膜,包括:基材層、黏著層、以及配置於所述基材層與所述黏著層之間的導電層;且150℃下的伸長率為1000%以上。 <2> A release film, including: a base material layer, an adhesive layer, and a conductive layer disposed between the base material layer and the adhesive layer; and the elongation rate at 150°C is 1000% or more.
<3>如<1>或<2>所述的脫模膜,用於藉由露出成形製造半導體封裝。 <3> The release film according to <1> or <2> is used for manufacturing semiconductor packages by exposure molding.
<4>一種半導體封裝的製造方法,包括:於如<1>至<3>中任一項所述的脫模膜的所述黏著層與電子零件表面的至少一部分接觸的狀態下密封所述電子零件的周圍的步驟;以及將所述脫模膜自所述電子零件剝離的步驟。 <4> A method of manufacturing a semiconductor package, including sealing the release film in a state where the adhesive layer of any one of <1> to <3> is in contact with at least a part of the surface of the electronic component. a step around an electronic component; and a step of peeling off the release film from the electronic component.
根據本發明的一態樣,可提供一種抑制電子零件的靜電破壞、且低溫下的伸長性優異的脫模膜。根據本發明的另一態樣,可提供一種使用該脫模膜的半導體封裝的製造方法。 According to one aspect of the present invention, it is possible to provide a release film that suppresses electrostatic destruction of electronic components and has excellent extensibility at low temperatures. According to another aspect of the present invention, a method for manufacturing a semiconductor package using the release film can be provided.
10:基材層 10:Substrate layer
20:黏著層 20:Adhesive layer
30:導電層 30:Conductive layer
40:脫模膜 40: Release film
圖1是概略性地表示脫模膜的結構的圖。 FIG. 1 is a diagram schematically showing the structure of a release film.
圖2是表示用於測定脫模膜的伸長率及彈性係數的試驗片的形狀的圖。 FIG. 2 is a diagram showing the shape of a test piece used for measuring the elongation and elastic coefficient of the release film.
以下,對用以實施本發明的形態進行詳細說明。但是,本發明並不限定於以下的實施形態。於以下的實施形態中,其結構要素(亦包含要素步驟(step)等)除特別明示的情況以外,並非為必需。數值及其範圍亦相同,並不限制本發明。 Hereinafter, the form for carrying out the present invention will be described in detail. However, the present invention is not limited to the following embodiments. In the following embodiments, the structural elements (including element steps, etc.) are not essential unless otherwise expressly stated. Numerical values and their ranges are also the same and do not limit the present invention.
本說明書中「步驟」這一用語中,不僅包含與其他步驟獨立的步驟,而且即便於與其他步驟無法明確地加以區分的情況下,只要達成該步驟的目的,則亦包含該步驟。 The term "step" in this specification includes not only steps that are independent of other steps, but also steps that cannot be clearly distinguished from other steps as long as the purpose of the step is achieved.
本說明書中使用「~」所表示的數值範圍包含「~」的前後所記載的數值分別作為最小值及最大值。 The numerical range expressed by "~" in this manual includes the values stated before and after "~" as the minimum value and maximum value respectively.
本說明書中階段性地所記載的數值範圍中,可將一個數值範圍中所記載的上限值或下限值替換為其他階段的記載的數值範圍的上限值或下限值。另外,本說明書中所記載的數值範圍中,可將所述數值範圍的上限值或下限值替換為實施例中所示的值。 Among the numerical ranges described in stages in this specification, the upper limit or lower limit described in one numerical range may be replaced by the upper limit or lower limit of the numerical range described in another stage. In addition, in the numerical range described in this specification, the upper limit value or the lower limit value of the said numerical range can be replaced with the value shown in an Example.
本說明書中關於組成物中的各成分的含有率或含量,於在組成物中存在多種相當於各成分的物質的情況下,只要無特別說明,則是指存在於組成物中的該多種物質的合計含有率或含量。 In this specification, the content rate or content of each component in the composition, when there are multiple substances corresponding to each component in the composition, refers to the multiple substances present in the composition unless otherwise specified. The total content rate or content.
本說明書中關於組成物中的各成分的粒徑,於在組成物中存在多種相當於各成分的粒子的情況下,只要無特別說明,則是指存在於組成物中的該多種粒子的混合物的值。 In this specification, the particle size of each component in the composition, when there are multiple types of particles corresponding to each component in the composition, refers to a mixture of the multiple types of particles present in the composition unless otherwise specified. value.
本說明書中「層」這一用語中,於對該層所存在的區域進行觀察時,不僅包含形成於該區域的整體的情況,而且亦包含僅形成於該區域的一部分的情況。 The term "layer" in this specification includes not only the case where the layer is formed in the entire region but also the case where it is formed in only a part of the region when the region in which the layer exists is observed.
本說明書中脫模膜或構成脫模膜的各層的厚度可利用公知的方法測定。例如,可使用測微儀(dial gauge)等進行測定,亦可根據脫模膜的剖面圖像進行測定。或者可使用溶劑等去除構成層的材料,根據去除前後的質量、材料的密度、層的面積等來算出。於層的厚度並非一定的情況下,將於任意五點測定的值的算術平均值作為層的厚度。 In this specification, the thickness of the release film or each layer constituting the release film can be measured by a known method. For example, it can be measured using a dial gauge or the like, or it can be measured based on a cross-sectional image of the release film. Alternatively, the material constituting the layer can be removed using a solvent, etc., and calculated based on the mass before and after removal, the density of the material, the area of the layer, etc. When the thickness of the layer is not constant, the arithmetic mean of the values measured at any five points is used as the thickness of the layer.
本說明書中「(甲基)丙烯酸」是指丙烯酸及甲基丙烯酸中任一者或兩者,「(甲基)丙烯酸酯」是指丙烯酸酯及甲基丙烯酸酯中任一者或兩者。 In this specification, "(meth)acrylic acid" refers to either or both acrylic acid and methacrylic acid, and "(meth)acrylate" refers to either or both acrylate and methacrylate.
<脫模膜> <Release film>
本揭示的脫模膜為如下脫模膜,其包括:基材層、黏著層、以及配置於所述基材層與所述黏著層之間的導電層,且滿足下述(1)或(2)中至少一者。 The release film of the present disclosure is a release film that includes: a base material layer, an adhesive layer, and a conductive layer disposed between the base material layer and the adhesive layer, and satisfies the following (1) or ( At least one of 2).
(1)基材層包含含有丁烯結構與環氧烷結構的聚酯共聚物(以下,亦簡稱為聚酯共聚物)。 (1) The base material layer contains a polyester copolymer containing a butylene structure and an alkylene oxide structure (hereinafter, also referred to as a polyester copolymer).
(2)150℃下的伸長率為1000%以上。 (2) The elongation at 150°C is more than 1000%.
根據所述脫模膜,可抑制電子零件的靜電破壞。其理由未必明確,但認為其原因在於:藉由設置導電層可抑制脫模膜的帶電,於將脫模膜自電子零件剝離時不易產生放電。 According to the release film, electrostatic damage of electronic components can be suppressed. The reason for this is not necessarily clear, but it is thought to be that providing the conductive layer suppresses charging of the release film, making it less likely that discharge will occur when the release film is peeled off from the electronic component.
圖1概略性地表示脫模膜的結構。如圖1所示,脫模膜40包括基材層10、黏著層20、以及配置於基材層10與黏著層20之間的導電層30。 FIG. 1 schematically shows the structure of a release film. As shown in FIG. 1 , the release film 40 includes a base material layer 10 , an adhesive layer 20 , and a conductive layer 30 disposed between the base material layer 10 and the adhesive layer 20 .
如圖1所示,本揭示的脫模膜中,導電層30並非配置於脫模膜40的表面,而配置於基材層10與黏著層20之間(黏著層20配置於脫模膜的表面)。因此,可經由黏著層使脫模膜充分地密接於電子零件的表面,從而可有效果地防止密封材料的侵入。 As shown in Figure 1, in the release film of the present disclosure, the conductive layer 30 is not disposed on the surface of the release film 40, but is disposed between the base material layer 10 and the adhesive layer 20 (the adhesive layer 20 is disposed on the surface of the release film). surface). Therefore, the release film can be fully adhered to the surface of the electronic component via the adhesive layer, thereby effectively preventing the intrusion of the sealing material.
進而,所述脫模膜滿足所述(1)或(2)中至少一者,因此低溫下的伸長性優異。 Furthermore, since the release film satisfies at least one of the above (1) or (2), it is excellent in elongation at low temperatures.
本揭示的脫模膜於將黏著層側貼附於電子零件等被黏物的表面的狀態下進行密封步驟等處理後加以剝離。本揭示的脫模膜於自被黏物剝離時不易產生放電。因此,例如可較佳地用於藉由露出成形製造半導體封裝。 The release film disclosed in the present disclosure is peeled off after undergoing a sealing step and other treatments with the adhesive layer side attached to the surface of an adherend such as electronic components. The release film of the present disclosure is less likely to generate discharge when peeled off from the adherend. Therefore, it can be suitably used for manufacturing semiconductor packages by exposure molding, for example.
本揭示中脫模膜於150℃下的伸長率(%)如下述般進行測定。 In this disclosure, the elongation (%) of the release film at 150° C. is measured as follows.
首先,使用脫模膜製作如圖2所示的形狀的試驗片。利用試驗機握持該試驗片的兩端實施拉伸試驗。測定是於150℃的條件下進行,將拉伸速度設為500mm/min。由試驗前的樣品的記號間距離A(圖2所示的試驗片的寬度為10mm的部分的長度:40mm)、與樣品切斷時的記號間距離B(試驗前的試驗片中寬度為10mm的部分的長度),利用下式來算出伸長率。 First, a test piece having a shape as shown in Figure 2 was produced using a release film. A tensile test was performed by holding both ends of the test piece using a testing machine. The measurement was performed at 150° C., and the stretching speed was set to 500 mm/min. The distance between marks A of the sample before the test (the length of the portion of the test piece with a width of 10 mm shown in Figure 2: 40 mm), and the distance between the marks when the sample is cut B (the width of the test piece before the test is 10 mm) (length of the part), use the following formula to calculate the elongation.
於脫模膜的伸長率的測定時例如使用奧里恩特 (orientec)股份有限公司製造的「騰喜龍(tensilon)拉伸試驗機RTA-100型」或與其類似、且具有夾捏工具及180度剝離裝置的試驗機。 When measuring the elongation of the release film, for example, Orient "Tensilon tensile testing machine RTA-100 type" manufactured by Orientec Co., Ltd. or a similar testing machine equipped with a pinching tool and a 180-degree peeling device.
脫模膜於150℃下的伸長率較佳為1200%以上,更佳為1400%以上。脫模膜於150℃下的伸長率例如於基材層包含聚酯共聚物的情況下,可根據聚酯共聚物中的丁烯結構與環氧烷結構的組成比來調整。 The elongation rate of the release film at 150°C is preferably 1200% or more, more preferably 1400% or more. The elongation of the release film at 150° C., for example, when the base material layer contains a polyester copolymer, can be adjusted based on the composition ratio of the butene structure and the alkylene oxide structure in the polyester copolymer.
脫模膜於150℃下的彈性係數較佳為10MPa~50MPa,更佳為20MPa~40MPa。若150℃下的彈性係數為10MPa以上,則有可獲得良好的模具追隨性的傾向,若為50MPa以下,則有可獲得良好的伸長性的傾向。 The elastic coefficient of the release film at 150°C is preferably 10MPa~50MPa, more preferably 20MPa~40MPa. When the elastic modulus at 150° C. is 10 MPa or more, good mold followability tends to be obtained, and when it is 50 MPa or less, good extensibility tends to be obtained.
脫模膜於150℃下的彈性係數例如於基材層包含聚酯共聚物的情況下,可根據聚酯共聚物中的丁烯結構與環氧烷結構的組成比來調整。 The elastic coefficient of the release film at 150° C., for example, when the base material layer contains a polyester copolymer, can be adjusted according to the composition ratio of the butene structure and the alkylene oxide structure in the polyester copolymer.
(150℃下的彈性係數) (Elastic coefficient at 150℃)
脫模膜於150℃下的彈性係數(MPa)是與150℃下的伸長率的測定同樣地,拉伸試驗片並根據應力-應變線圖中的切線的斜率來算出。由對試驗片施加的每單位剖面積(mm2)的力(MPa)、試驗前的記號間距離L0(40mm)、及記號間距離L,利用下式來算出。 The elastic coefficient (MPa) of the release film at 150°C is calculated from the slope of the tangent line in the stress-strain diagram by stretching the test piece in the same manner as the measurement of the elongation at 150°C. It is calculated using the following equation from the force per unit cross-sectional area (mm 2 ) (MPa) applied to the test piece, the distance between marks L0 (40 mm) before the test, and the distance between marks L.
[數式2]
(基材層) (Substrate layer)
就低溫下的伸長性的觀點而言,基材層較佳為包含含有丁烯結構與環氧烷結構的聚酯共聚物。 From the viewpoint of low-temperature extensibility, the base layer preferably contains a polyester copolymer containing a butene structure and an alkylene oxide structure.
聚酯共聚物中包含的環氧烷結構為伸烷基與氧原子鍵結的結構,伸烷基的碳數較佳為1~6,更佳為4。 The alkylene oxide structure contained in the polyester copolymer is a structure in which an alkylene group is bonded to an oxygen atom. The number of carbon atoms in the alkylene group is preferably 1 to 6, and more preferably 4.
聚酯共聚物例如可藉由使對苯二甲酸等芳香族二羧酸或其衍生物、1,4-丁二醇、及聚(環氧烷)二醇進行共聚來合成。 The polyester copolymer can be synthesized, for example, by copolymerizing aromatic dicarboxylic acids such as terephthalic acid or derivatives thereof, 1,4-butanediol, and poly(alkylene oxide) glycol.
作為聚酯共聚物,較佳為可列舉包含下述式(1)所表示的結構單元與下述式(2)所表示的結構單元的共聚物。該共聚物為式(1)所表示的結構單元構成硬鏈段(PBT)、式(2)所表示的結構單元構成軟鏈段(PTMG)的彈性體。 Preferred examples of the polyester copolymer include copolymers containing a structural unit represented by the following formula (1) and a structural unit represented by the following formula (2). This copolymer is an elastomer in which the structural units represented by the formula (1) constitute the hard segment (PBT) and the structural units represented by the formula (2) constitute the soft segment (PTMG).
構成所述共聚物的硬鏈段(PBT)與軟鏈段(PTMG)的質量比(PBT:PTMG)並無特別限制。例如可自1:9~9:1 的範圍選擇,亦可自2:8~8:2的範圍選擇,抑或可自3:7~7:3的範圍選擇。 The mass ratio (PBT:PTMG) of the hard segment (PBT) and the soft segment (PTMG) constituting the copolymer is not particularly limited. For example, it can be from 1:9~9:1 You can choose from the range of 2:8~8:2, or you can choose from the range of 3:7~7:3.
基材層可包含聚酯共聚物以外的成分。例如可列舉:聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)、聚對苯二甲酸丁二酯(polybutylene terephthalate,PBT)等聚酯、聚醯亞胺、聚醯胺、聚酯醚、聚醯胺醯亞胺、含氟樹脂等。於基材層包含聚酯共聚物以外的成分的情況下,聚酯共聚物的比例較佳為基材層整體的50質量%以上,更佳為70質量%以上,進而佳為80質量%以上。 The base layer may contain components other than polyester copolymers. Examples include polyesters such as polyethylene terephthalate (PET) and polybutylene terephthalate (PBT), polyimide, polyamide, and polyester ethers. Polyamide imide, fluorine-containing resin, etc. When the base material layer contains components other than the polyester copolymer, the proportion of the polyester copolymer is preferably 50 mass% or more, more preferably 70 mass% or more, and still more preferably 80 mass% or more of the entire base material layer. .
基材層的厚度並無特別限定,較佳為10μm~300μm,更佳為20μm~100μm。若基材層的厚度為10μm以上,則脫模片有不易破裂、操作性優異的傾向。若基材層的厚度為300μm以下,則對模具的追隨性優異,因此有抑制成型的半導體封裝的褶皺等引起的外觀不良的發生的傾向。 The thickness of the base material layer is not particularly limited, but is preferably 10 μm to 300 μm, more preferably 20 μm to 100 μm. If the thickness of the base material layer is 10 μm or more, the release sheet will be less likely to be broken and will tend to have excellent workability. When the thickness of the base material layer is 300 μm or less, the mold followability is excellent, so the occurrence of appearance defects caused by wrinkles or the like in the molded semiconductor package tends to be suppressed.
基材層可僅包括一層,亦可包括兩層以上。作為獲得包括兩層以上的基材層的方法,可列舉利用共擠出法擠出各層的材料而製作的方法、層壓兩張以上的膜的方法等。 The base material layer may include only one layer, or may include two or more layers. Examples of methods for obtaining a base material layer including two or more layers include a method of extruding materials for each layer using a co-extrusion method, a method of laminating two or more films, and the like.
視需要亦可對基材層的設置有導電層之側的面實施用以提高對於導電層的密接力的處理。作為處理的方法,可列舉:電暈處理、電漿處理等表面處理、底塗劑(底漆)的塗佈等。 If necessary, the surface of the base material layer on which the conductive layer is provided may be treated to improve the adhesion to the conductive layer. Examples of treatment methods include surface treatment such as corona treatment and plasma treatment, application of a primer (primer), and the like.
視需要亦可對基材層的背面(與配置有導電層之側相反的面)賦予用以調節脫模膜的自卷的捲出性的背面處理劑。作為 背面處理劑,可列舉:矽酮樹脂、含氟樹脂、聚乙烯基醇、具有烷基的樹脂等。視需要該些背面處理劑可進行改質處理。背面處理劑可僅使用一種,亦可併用兩種以上。 If necessary, a back surface treatment agent for adjusting the self-rolling properties of the release film may be provided on the back surface of the base material layer (the surface opposite to the side where the conductive layer is disposed). as Examples of the back surface treatment agent include silicone resin, fluorine-containing resin, polyvinyl alcohol, and resin having an alkyl group. If necessary, these backside treatment agents can be modified. Only one type of back surface treatment agent may be used, or two or more types may be used in combination.
(黏著層) (adhesive layer)
就對於電子零件的表面的密接性的觀點而言,黏著層較佳為包含黏著劑。黏著劑的種類並無特別限制,可考慮黏著性、脫模性、耐熱性等來選擇。具體而言,較佳為丙烯酸系黏著劑、矽酮系黏著劑及胺基甲酸酯系黏著劑,更佳為丙烯酸系黏著劑。黏著層中包含的黏著劑可僅為一種,亦可為兩種以上。 From the viewpoint of adhesion to the surface of the electronic component, the adhesive layer preferably contains an adhesive. The type of adhesive is not particularly limited, and can be selected taking into consideration adhesion, mold releasability, heat resistance, etc. Specifically, an acrylic adhesive, a silicone adhesive, and a urethane adhesive are preferred, and an acrylic adhesive is more preferred. The adhesive layer may contain only one type of adhesive, or two or more types of adhesives.
丙烯酸系黏著劑較佳為使作為主單體的丙烯酸丁酯、丙烯酸乙酯、丙烯酸2-乙基己酯等玻璃轉移溫度(Tg)低(例如,-20℃以下)的單體、與(甲基)丙烯酸、(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基乙酯、(甲基)丙烯醯胺、(甲基)丙烯腈等具有官能基的單體共聚而獲得的共聚物(以下,亦稱為丙烯酸共聚物)。所述「玻璃轉移溫度」為使用相應的單體而獲得的均聚物的玻璃轉移溫度。 The acrylic adhesive is preferably a monomer with a low glass transition temperature (Tg) (for example, -20°C or less) such as butyl acrylate, ethyl acrylate, and 2-ethylhexyl acrylate as the main monomer, and ( Copolymer obtained by copolymerizing monomers with functional groups such as meth)acrylic acid, hydroxyethyl (meth)acrylate, hydroxyethyl (meth)acrylate, (meth)acrylamide, (meth)acrylonitrile, etc. (Hereinafter also referred to as acrylic copolymer). The "glass transition temperature" is the glass transition temperature of a homopolymer obtained using the corresponding monomer.
丙烯酸共聚物可為交聯型丙烯酸共聚物。交聯型丙烯酸共聚物可藉由使用交聯劑使作為丙烯酸共聚物的原料的單體進行交聯來合成。作為交聯型丙烯酸共聚物的合成中所使用的交聯劑,可列舉:異氰酸酯化合物、三聚氰胺化合物、環氧化合物等公知的交聯劑。另外,為了於丙烯酸系黏著劑中形成緩慢擴展的網眼狀結構,交聯劑更佳為三官能、四官能等多官能交聯劑。 The acrylic copolymer may be a cross-linked acrylic copolymer. The cross-linked acrylic copolymer can be synthesized by cross-linking monomers that are raw materials of the acrylic copolymer using a cross-linking agent. Examples of the crosslinking agent used in the synthesis of the crosslinked acrylic copolymer include known crosslinking agents such as isocyanate compounds, melamine compounds, and epoxy compounds. In addition, in order to form a slowly expanding network structure in the acrylic adhesive, the cross-linking agent is preferably a multi-functional cross-linking agent such as trifunctional or tetrafunctional.
黏著層視需要可包含錨定提高劑、交聯促進劑、填料、著色劑等。例如藉由黏著層包含填料,可獲得使黏著層的外表面(與導電層相反的面)粗糙化而提高自電子零件的剝離性等效果。 The adhesive layer may contain anchoring enhancers, cross-linking accelerators, fillers, colorants, etc., if necessary. For example, when the adhesive layer contains a filler, the outer surface of the adhesive layer (the surface opposite to the conductive layer) is roughened, thereby improving the peelability from the electronic component.
填料的材質並無特別限制,可為樹脂等有機物質,亦可為金屬、金屬氧化物等無機物質,抑或可為有機物質與無機物質的組合。另外,黏著層中包含的填料可僅為一種,亦可為兩種以上。填料的體積平均粒徑並無特別限制。例如可自1μm~20μm的範圍選擇。本說明書中填料的體積平均粒徑為藉由雷射繞射法所測定的體積基準的粒度分佈中自小徑側的累計成為50%時的粒徑(D50)。 The material of the filler is not particularly limited and can be organic substances such as resin, inorganic substances such as metals and metal oxides, or a combination of organic substances and inorganic substances. In addition, the filler contained in the adhesive layer may be only one type or two or more types. The volume average particle diameter of the filler is not particularly limited. For example, it can be selected from the range of 1μm~20μm. The volume average particle diameter of the filler in this specification is the particle diameter (D50) when the accumulation from the small diameter side reaches 50% in the volume-based particle size distribution measured by the laser diffraction method.
就與黏著層中包含的黏著劑的親和性的觀點而言,填料較佳為樹脂粒子。作為構成樹脂粒子的樹脂,可列舉:丙烯酸樹脂、烯烴樹脂、苯乙烯樹脂、丙烯腈樹脂、矽酮樹脂等。就抑制對成形後的半導體封裝表面的殘渣的觀點而言,較佳為丙烯酸樹脂。 From the viewpoint of affinity with the adhesive contained in the adhesive layer, the filler is preferably resin particles. Examples of the resin constituting the resin particles include acrylic resin, olefin resin, styrene resin, acrylonitrile resin, silicone resin, and the like. From the viewpoint of suppressing residues on the surface of the semiconductor package after molding, an acrylic resin is preferred.
黏著層的厚度並無特別限定,較佳為0.1μm~100μm,更佳為1μm~100μm。若黏著層的厚度為0.1μm以上,則可充分獲得對於電子零件的黏著力,有效果地抑制密封材料的侵入。若黏著層的厚度為100μm以下,則黏著層表面距導電層的距離不會過遠,將表面電阻率維持得低,從而有效果地抑制電子零件的靜電破壞。另外,難以產生黏著層熱硬化時的熱收縮應力,容易保持脫模膜的平坦性。 The thickness of the adhesive layer is not particularly limited, but is preferably 0.1 μm to 100 μm, more preferably 1 μm to 100 μm. If the thickness of the adhesive layer is 0.1 μm or more, sufficient adhesion to electronic parts can be obtained and the intrusion of the sealing material can be effectively suppressed. If the thickness of the adhesive layer is 100 μm or less, the distance between the surface of the adhesive layer and the conductive layer will not be too far, and the surface resistivity will be maintained low, thereby effectively suppressing electrostatic damage to electronic components. In addition, it is difficult to generate thermal shrinkage stress when the adhesive layer is thermally cured, and it is easy to maintain the flatness of the release film.
若綜合地考慮黏著層的形成容易度(塗佈性等)、黏著力的確保、抗靜電功能的確保等,則黏著層的厚度進而佳為3μm~50μm。 Taking into consideration the ease of formation of the adhesive layer (coatability, etc.), ensuring the adhesive force, ensuring the antistatic function, etc., the thickness of the adhesive layer is further preferably 3 μm to 50 μm.
(導電層) (conductive layer)
導電層只要可提高脫模膜的導電性來抑制帶電,則其結構並無特別限制。例如可為包含抗靜電劑、導電性高分子材料、金屬等導電性材料的層。 The structure of the conductive layer is not particularly limited as long as it can improve the conductivity of the release film and suppress charging. For example, the layer may be a layer containing conductive materials such as antistatic agents, conductive polymer materials, and metals.
作為導電層中包含的抗靜電劑,可列舉:四級銨鹽、吡啶鎓鹽、具有一級胺基~三級胺基等陽離子性基的陽離子性抗靜電劑、具有磺酸鹽基、硫酸酯鹽基、磷酸酯鹽基等陰離子性基的陰離子系抗靜電劑、胺基酸系、胺基酸硫酸酯系等兩性抗靜電劑、胺基醇系、甘油系、聚乙二醇系等具有非離子性基的非離子系抗靜電劑、對該些抗靜電劑進行高分子量化的高分子型抗靜電劑等。抗靜電劑可為主劑與助劑(硬化劑等)的組合。 Examples of the antistatic agent contained in the conductive layer include quaternary ammonium salts, pyridinium salts, cationic antistatic agents having cationic groups such as primary to tertiary amine groups, sulfonate groups, and sulfate esters. Anionic antistatic agents with anionic bases such as salt base and phosphate ester base, amphoteric antistatic agents such as amino acid based and amino acid sulfate based, aminoalcohol based, glycerin based, polyethylene glycol based, etc. Nonionic-based nonionic antistatic agents, polymeric antistatic agents that have high molecular weight of these antistatic agents, etc. Antistatic agent can be a combination of main agent and auxiliary agent (hardener, etc.).
作為導電層中包含的導電性高分子材料,可列舉於骨架中具有聚噻吩、聚苯胺、聚吡咯、聚乙炔等的高分子化合物。 Examples of the conductive polymer material contained in the conductive layer include polymer compounds having polythiophene, polyaniline, polypyrrole, polyacetylene, etc. in their skeleton.
作為金屬,可列舉:鋁、銅、金、鉻、錫等,就獲取性的觀點而言,較佳為鋁。 Examples of the metal include aluminum, copper, gold, chromium, tin, etc. From the viewpoint of accessibility, aluminum is preferred.
形成導電層的方法並無特別限制。例如可列舉:於作為基材層的膜的單面層壓金屬箔等的方法、於作為基材層的膜的單面藉由塗佈、蒸鍍等賦予導電層的材料的方法等。 The method of forming the conductive layer is not particularly limited. Examples include a method of laminating a metal foil on one side of a film as a base layer, a method of applying a conductive layer material to one side of a film as a base layer by coating, vapor deposition, or the like.
導電層的厚度只要充分獲得脫模膜的抗靜電效果,則並無特別限定。例如可為0.01μm~1μm的範圍內。 The thickness of the conductive layer is not particularly limited as long as the antistatic effect of the release film is sufficiently obtained. For example, it can be in the range of 0.01μm~1μm.
<半導體封裝的製造方法> <Manufacturing method of semiconductor package>
本揭示的半導體封裝的製造方法為包括以下步驟的半導體封裝的製造方法,即於所述脫模膜的黏著層與電子零件表面的至少一部分接觸的狀態下密封電子零件的周圍的步驟;以及將脫模膜自電子零件剝離的步驟。 The manufacturing method of a semiconductor package of the present disclosure is a manufacturing method of a semiconductor package including the steps of sealing the periphery of the electronic component in a state where the adhesive layer of the release film is in contact with at least part of the surface of the electronic component; and The step of peeling off the release film from electronic parts.
如所述般,本揭示的脫模膜於剝離時不易產生放電,可抑制電子零件的靜電破壞。因而,根據所述方法,可製造可靠性優異的半導體封裝。 As described above, the release film of the present disclosure is less likely to generate discharge when peeled off, and can suppress electrostatic damage to electronic components. Therefore, according to the method, a semiconductor package with excellent reliability can be manufactured.
進而,本揭示的脫模膜對於電子零件的密接性優異。因而,不易發生密封材料侵入至將脫模膜自電子零件剝離後露出的部分。 Furthermore, the release film of this disclosure has excellent adhesion to electronic components. Therefore, it is difficult for the sealing material to invade the portion exposed after the release film is peeled off from the electronic component.
所述方法中所使用的電子零件的種類並無特別限制。例如可列舉半導體元件、電容器、端子等。 The types of electronic components used in the method are not particularly limited. Examples include semiconductor elements, capacitors, terminals, and the like.
於所述方法中密封電子零件的周圍的材料(密封材料)的種類並無特別限制。例如可列舉包含環氧樹脂、丙烯酸樹脂等的樹脂組成物。 The type of material (sealing material) used to seal the surroundings of the electronic component in the method is not particularly limited. Examples include resin compositions containing epoxy resin, acrylic resin, and the like.
[實施例] [Example]
以下,基於實施例來對本揭示的脫模膜進行說明。其中,本揭示並不限定於以下的實施例。 Hereinafter, the release film of this disclosure is demonstrated based on an Example. However, this disclosure is not limited to the following Examples.
<實施例1> <Example 1>
作為基材層的材料,使用通式(1)所表示的結構的硬鏈段(PBT)及通式(2)所表示的結構的軟鏈段(PTMG)的質量比 (PBT:PTMG)為3:7的聚酯共聚物,製作厚度為100μm的基材膜,並對單面進行電暈處理。 As the material of the base material layer, the mass ratio of the hard segment (PBT) with the structure represented by the general formula (1) and the soft segment (PTMG) with the structure represented by the general formula (2) is used. (PBT:PTMG) is a 3:7 polyester copolymer, and a substrate film with a thickness of 100 μm is made, and one side is corona treated.
於基材膜的電暈處理面上塗佈利用溶劑將抗靜電劑稀釋為2.5質量%者,於100℃下加熱1分鐘形成導電層(厚度0.3μm)。作為溶劑,使用水與異丙醇的混合物(質量比為1:1)。 Apply an antistatic agent diluted to 2.5% by mass with a solvent on the corona-treated surface of the base film, and heat it at 100°C for 1 minute to form a conductive layer (thickness: 0.3 μm). As a solvent, a mixture of water and isopropyl alcohol (mass ratio 1:1) was used.
作為黏著層的材料,混合黏著劑(100質量份)、交聯劑(20質量份)、甲苯:甲基乙基酮的質量比為8:2的混合溶劑(34質量份)、以及填料(5質量份)來製備黏著層形成用組成物。以黏著層的厚度成為5μm的方式將該黏著層形成用組成物塗佈於導電層上,於100℃下加熱1分鐘形成黏著層,從而製作脫模膜。 As a material for the adhesive layer, mix an adhesive (100 parts by mass), a cross-linking agent (20 parts by mass), a mixed solvent (34 parts by mass) with a mass ratio of toluene:methyl ethyl ketone of 8:2, and a filler ( 5 parts by mass) to prepare a composition for forming an adhesive layer. The composition for forming an adhesive layer was applied on the conductive layer so that the thickness of the adhesive layer became 5 μm, and the adhesive layer was formed by heating at 100° C. for 1 minute to prepare a release film.
<實施例2> <Example 2>
將聚酯共聚物的硬鏈段(PBT)及軟鏈段(PTMG)的質量比(PBT:PTMG)設為5:5,除此以外與實施例1同樣地製作脫模膜。 A release film was produced in the same manner as in Example 1 except that the mass ratio (PBT:PTMG) of the hard segment (PBT) and the soft segment (PTMG) of the polyester copolymer was 5:5.
<實施例3> <Example 3>
將聚酯共聚物的硬鏈段(PBT)及軟鏈段(PTMG)的質量比(PBT:PTMG)設為7:3,除此以外與實施例1同樣地製作脫模膜。 A release film was produced in the same manner as in Example 1 except that the mass ratio (PBT:PTMG) of the hard segment (PBT) and the soft segment (PTMG) of the polyester copolymer was 7:3.
<實施例4> <Example 4>
將聚酯共聚物的硬鏈段(PBT)及軟鏈段(PTMG)的質量比(PBT:PTMG)設為8:2,除此以外與實施例1同樣地製作脫模膜。 A release film was produced in the same manner as in Example 1 except that the mass ratio (PBT:PTMG) of the hard segment (PBT) and the soft segment (PTMG) of the polyester copolymer was 8:2.
<實施例5> <Example 5>
藉由共擠出來製作基材膜(厚度100μm),所述基材膜是將包含聚對苯二甲酸丁二酯的層A、與包含硬鏈段(PBT)及軟鏈段(PTMG)的質量比(PBT:PTMG)為2:8的聚酯共聚物的層B積層而成。層A及層B的厚度比設為1:1。 A base film (thickness 100 μm) was produced by co-extrusion. The base film was composed of layer A containing polybutylene terephthalate, and layer A containing hard segments (PBT) and soft segments (PTMG). Layer B of a polyester copolymer with a mass ratio (PBT:PTMG) of 2:8 is laminated. The thickness ratio of layer A and layer B is set to 1:1.
使用所獲得的基材膜,除此以外與實施例1同樣地製作脫模膜。 A release film was produced in the same manner as in Example 1 except that the obtained base film was used.
<比較例1> <Comparative example 1>
使用於單面進行了電暈處理的厚度100μm的聚對苯二甲酸丁二酯膜作為基材膜,除此以外與實施例1同樣地製作脫模膜。 A release film was produced in the same manner as in Example 1, except that a polybutylene terephthalate film with a thickness of 100 μm that was corona-treated on one side was used as a base film.
<比較例2> <Comparative example 2>
於基材膜上未形成導電層而形成黏著層,除此以外與實施例3同樣地製作脫模膜。 A release film was produced in the same manner as in Example 3 except that a conductive layer was not formed on the base film but an adhesive layer was formed.
脫模膜的製作中使用的各材料的詳情如下述般。 Details of each material used for production of the release film are as follows.
抗靜電劑:下述成分A(100質量份)及成分B(25質量份)的混合物 Antistatic agent: a mixture of the following component A (100 parts by mass) and component B (25 parts by mass)
成分A:作為具有四級銨鹽的丙烯酸共聚物的陽離子性抗靜電劑、商品名「保迪普(bondeip)PA-100主劑」、小西(Konishi)股份有限公司 Component A: A cationic antistatic agent that is an acrylic copolymer with quaternary ammonium salt, trade name "bondeip PA-100 main agent", Konishi Co., Ltd.
成分B:環氧樹脂、商品名「保迪普(bondeip)PA-100硬化劑」、小西(Konishi)股份有限公司 Component B: Epoxy resin, trade name "bondeip PA-100 hardener", Konishi Co., Ltd.
黏著劑:丙烯酸系黏著劑、商品名「FS-1208」、獅王精 化(Lion Specialty Chemicals)股份有限公司、包含甲基丙烯酸酯的多種的混合單體 Adhesive: Acrylic adhesive, trade name "FS-1208", Lion Essence Lion Specialty Chemicals Co., Ltd., various mixed monomers including methacrylate
交聯劑:聚異氰酸酯系交聯劑(六亞甲基二異氰酸酯交聯劑(HMDI))、商品名「多耐德(Duranate)E405-80T」、旭化成化學股份有限公司 Cross-linking agent: Polyisocyanate cross-linking agent (hexamethylene diisocyanate cross-linking agent (HMDI)), trade name "Duranate E405-80T", Asahi Kasei Chemical Co., Ltd.
填料:交聯丙烯酸粒子、商品名「MX-500」、綜研化學股份有限公司、體積平均粒徑為5μm Filler: Cross-linked acrylic particles, trade name "MX-500", Soken Chemical Co., Ltd., volume average particle size 5 μm
<評價試驗> <Evaluation test>
使用所製作的脫模膜來進行以下的評價試驗。 The following evaluation test was performed using the produced release film.
(150℃下的伸長率及彈性係數) (Elongation and elastic coefficient at 150℃)
藉由所述方法,測定脫模膜於150℃下的伸長率及彈性係數。於測定時使用奧里恩特(orientec)股份有限公司製造的「騰喜龍(tensilon)拉伸試驗機RTA-100型」。將結果示於表1。 By the above method, the elongation and elastic coefficient of the release film at 150°C were measured. "Tensilon tensile testing machine RTA-100 model" manufactured by Orientec Co., Ltd. was used during the measurement. The results are shown in Table 1.
(模具追隨性及/或成型品外觀) (Mold followability and/or molded product appearance)
於深度3mm的轉移成形模具的上模安裝脫模膜,以真空固定後閉模,利用密封材料進行轉移成形。模具溫度設為150℃,成形壓力設為6.86MPa(70kgf/cm2),成形時間設為300秒。 A release film is installed on the upper mold of a transfer mold with a depth of 3 mm, and the mold is closed after fixing it with vacuum, and transfer molding is performed using sealing material. The mold temperature was set to 150°C, the molding pressure was set to 6.86MPa (70kgf/cm 2 ), and the molding time was set to 300 seconds.
關於模具追隨性,若未產生破裂等而脫模片可追隨模具,則評價為○,於稍微發生破裂等但實用上無問題的情況下,評價為△,於產生破裂等的情況下,評價為×。 Regarding the mold followability, if no cracks etc. occur and the release sheet can follow the mold, the evaluation is ○; if cracks etc. occur slightly but there is no practical problem, the evaluation is △; if cracks etc. occur, the evaluation is △ is ×.
關於成型品外觀,於脫模膜未產生褶皺、流痕等而外表良好的情況下,評價為○,於脫模膜稍微產生褶皺、流痕等但實用上無 問題的情況下,評價為△,於脫模膜產生褶皺、流痕等而於外觀產生不良的情況下,評價為×。 Regarding the appearance of the molded product, when the release film has no wrinkles, flow marks, etc. and the appearance is good, the evaluation is ○; when the release film has slight wrinkles, flow marks, etc., but it is not practical In the case of a problem, the evaluation is Δ, and in the case where wrinkles, flow marks, etc. occur in the release film and a defective appearance occurs, the evaluation is ×.
(電子零件的靜電破壞試驗) (Electrostatic damage test of electronic parts)
於搭載有電子零件(半導體元件)的電路基板上貼附脫模膜的黏著層側,於溫度為23℃±2℃、濕度為60±10%RH的環境下放置60秒。之後,趁勢剝離脫模膜。藉由V-I(電壓電流特性)測定確認重覆五次該作業後的電路基板,於取得通電的情況下評價為「○」,於未取得通電的情況下評價為「×」。 Place the release film on the adhesive layer side of the circuit board on which the electronic component (semiconductor component) is mounted, and place it in an environment with a temperature of 23°C ± 2°C and a humidity of 60 ± 10% RH for 60 seconds. After that, take advantage of the opportunity to peel off the release film. The circuit board after repeating this operation five times was confirmed by V-I (voltage and current characteristics) measurement. When energization was obtained, the evaluation was "○", and when energization was not obtained, the evaluation was "×".
如表1的結果所示,與基材層不包含聚酯共聚物、150℃下的伸長率未滿1000%的比較例1的脫模膜相比,基材層包含聚酯共聚物、150℃下的伸長率為1000%以上的實施例的脫模膜於低溫下的伸長性優異,模具追隨性及成形品外觀的評價亦良好。 As shown in the results in Table 1, compared with the release film of Comparative Example 1 in which the base material layer did not contain a polyester copolymer and the elongation at 150° C. was less than 1000%, the base material layer contained a polyester copolymer, 150 The release films of the Examples with an elongation of 1000% or more at ℃ were excellent in elongation at low temperatures, and were also evaluated favorably in mold followability and molded product appearance.
進而,於基材層與黏著層之間形成導電層的實施例的脫模膜於靜電破壞試驗中未產生電子零件的靜電破壞。 Furthermore, the release film of the embodiment in which the conductive layer was formed between the base material layer and the adhesive layer did not cause electrostatic damage to the electronic component in the electrostatic damage test.
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2019/035010 WO2021044589A1 (en) | 2019-09-05 | 2019-09-05 | Mold-release film and method for manufacturing semiconductor package |
WOPCT/JP2019/035010 | 2019-09-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202116951A TW202116951A (en) | 2021-05-01 |
TWI833987B true TWI833987B (en) | 2024-03-01 |
Family
ID=74853319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109130220A TWI833987B (en) | 2019-09-05 | 2020-09-03 | Release film and method of producing semiconductor package |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP7363905B2 (en) |
KR (1) | KR20220057545A (en) |
CN (1) | CN114342051A (en) |
TW (1) | TWI833987B (en) |
WO (1) | WO2021044589A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112021006525T5 (en) * | 2021-02-25 | 2023-11-16 | AGC Inc. | FILM, METHOD FOR PRODUCING SAME AND METHOD FOR PRODUCING A SEMICONDUCTOR HOUSING |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201634630A (en) * | 2015-02-06 | 2016-10-01 | Asahi Glass Co Ltd | Film, method for producing same, and method for producing semiconductor element using film |
TWI656972B (en) * | 2014-03-07 | 2019-04-21 | 日商Agc股份有限公司 | Release film and method of manufacturing the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005186740A (en) | 2003-12-25 | 2005-07-14 | Aisin Seiki Co Ltd | Shift control device for vehicle |
JP6126368B2 (en) * | 2012-12-06 | 2017-05-10 | 三井化学東セロ株式会社 | Mold release film for LED encapsulant and method for producing LED encapsulant using the same |
-
2019
- 2019-09-05 WO PCT/JP2019/035010 patent/WO2021044589A1/en active Application Filing
- 2019-09-05 JP JP2021543898A patent/JP7363905B2/en active Active
- 2019-09-05 CN CN201980100051.2A patent/CN114342051A/en active Pending
- 2019-09-05 KR KR1020227007429A patent/KR20220057545A/en not_active Application Discontinuation
-
2020
- 2020-09-03 TW TW109130220A patent/TWI833987B/en active
-
2023
- 2023-09-22 JP JP2023158467A patent/JP2023174688A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI656972B (en) * | 2014-03-07 | 2019-04-21 | 日商Agc股份有限公司 | Release film and method of manufacturing the same |
TW201634630A (en) * | 2015-02-06 | 2016-10-01 | Asahi Glass Co Ltd | Film, method for producing same, and method for producing semiconductor element using film |
Also Published As
Publication number | Publication date |
---|---|
WO2021044589A1 (en) | 2021-03-11 |
JP7363905B2 (en) | 2023-10-18 |
CN114342051A (en) | 2022-04-12 |
TW202116951A (en) | 2021-05-01 |
JP2023174688A (en) | 2023-12-08 |
KR20220057545A (en) | 2022-05-09 |
JPWO2021044589A1 (en) | 2021-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6477732B2 (en) | Film, method for producing the same, and method for producing a semiconductor element using the film | |
JP5718005B2 (en) | A heat-resistant adhesive tape for manufacturing a semiconductor device and a method for manufacturing a semiconductor device using the tape. | |
TW201545849A (en) | Mold release film, method for manufacturing same, and method for manufacturing semiconductor package | |
KR20180072716A (en) | Title: Release film for process, use thereof, and manufacturing method of resin sealing semiconductor using the same | |
TW201724291A (en) | Adhesive sheet and method for producing semiconductor device | |
JP2013141793A (en) | Release polyester film for molding | |
US20230348759A1 (en) | Film, and method for manufacturing semiconductor package | |
TWI804633B (en) | Adhesive flakes | |
TWI833987B (en) | Release film and method of producing semiconductor package | |
US20130244377A1 (en) | Heat-resistant pressure-sensitive adhesive tape for production of semiconductor device and method for producing semiconductor device using the tape | |
JP2005166904A (en) | Mold releasing sheet for semiconductor mold | |
EP2639278A1 (en) | Heat-resistant pressure-sensitive adhesive tape for production of semiconductor device and method for producing seminconductor device using the tape | |
JP6988923B2 (en) | Manufacturing method of semiconductor devices and film-like adhesives | |
KR101682934B1 (en) | Release film for memory semiconductor package mold | |
TW201726385A (en) | Mold release film for manufacturing process, applications thereof and method of manufacturing resin-sealed semiconductor using the same | |
TW202209514A (en) | Releasing film and method for producing electronic component device | |
JP2024062380A (en) | Release film for semiconductor molding and production method of semiconductor package | |
WO2022138676A1 (en) | Release film and method for manufacturing electronic component device | |
KR20130103947A (en) | Heat-resistant pressure-sensitive adhesive tape for production of semiconductor device and method for producing semiconductor device using the tape | |
KR20240057353A (en) | Release film for semiconductor molding and method of producing semiconductor package | |
CN117922126A (en) | Release film for semiconductor molding and method for manufacturing semiconductor package | |
TW201922869A (en) | Single-layer film and heat-resistant adhesive tape using same | |
CN109689822B (en) | Adhesive composition, adhesive film and method for applying adhesive film | |
TW202243873A (en) | Film, method for manufacturing the same, and method for manufacturing semiconductor package | |
JPWO2019150449A1 (en) | Manufacturing method of semiconductor devices and film-like adhesives |