CN102130235A - Method and device for packaging LED chip - Google Patents
Method and device for packaging LED chip Download PDFInfo
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- CN102130235A CN102130235A CN2010106198728A CN201010619872A CN102130235A CN 102130235 A CN102130235 A CN 102130235A CN 2010106198728 A CN2010106198728 A CN 2010106198728A CN 201010619872 A CN201010619872 A CN 201010619872A CN 102130235 A CN102130235 A CN 102130235A
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- led chip
- lens
- encapsulating material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Abstract
The invention discloses a method and a device for packaging a light emitting diode (LED) chip. The method comprises the following steps of: growing lug bosses surrounding a lens molding area on a substrate, and arranging the LED chip on the substrate, wherein the LED chip is positioned in the lens molding area defined by the lug bosses; and injecting a fluidic packaging material in a set dose into the top of the LED chip, and curing to form a lens for packaging the LED chip. Due to the technical scheme, the invention provides a method and a device for packaging the LED chip which can realize the packaging without an extra mold and adapt to LED wafer-level packaging.
Description
Technical field
The present invention relates to the luminescent device technical field, relate in particular to a kind of method for packing and packaging of led chip.
Background technology
Along with the continuous growth and the new appearance in succession of using of the LED light-emitting diode market demand, the encapsulation technology of LED is had higher requirement, LED plays very big effect on being encapsulated in and improving the LED performance and reduce cost.
At present, LED encapsulation mainly contains integrated two kinds of single-chip and multicore sheet.In the single-chip LED packaging, led chip is that upside-down mounting is bonded on the transition substrate, is manufactured with on the transition substrate to be used for the metallic circuit that is electrically connected between LED and this transition substrate, and this transition substrate is connected to fin with the led chip that is bonded together.Then ready made lens (encapsulation material solidifies formation) cover led chip, circuit and transition substrate, and whole packaging finally is installed on the support plate (such as PCB) that carries out signal distributions and heat radiation.This kind method for packing, because of its structure is complicated, cost is higher, and led chip encapsulated separately, this means that it can not realize high yield and wafer-level packaging cheaply.
Advantages such as wafer scale (WLP) encapsulation technology has cost low, and volume is little.The led chip upside-down mounting can be made full use of on Silicon Wafer and the silicon technology of combination maturation and the integrate circuit function of silicon, form the system integration of functions such as power supply, calculating, control and communication, be the developing direction of following demonstration and lighting field.Which kind of packing forms no matter, an optical lens all is the major part of LED encapsulation, optical lens is directly installed on the support and envelopes entire chip fully, becomes as a whole with LED, can converge the light of chip effectively, obtains different rising angles.And go out Seterolithography control is a very complicated processing procedure, the character of lens material itself is also different according to the molding parameter variation, can the ejaculation of lens be had a significant impact, the contraction of lens also can be different because of the setting of the selection of material and molding parameter, cause the surface profile distortion or the lens internal residual stresses of lens too many, and cause influencing its optic effect.And lens of the prior art are generally made by materials such as the plastics of printing opacity, glass, epoxy resin, and this lens can not satisfy the needed high temperature of lead-free solder technology.
Summary of the invention
The invention provides a kind of need not and just can realize encapsulation, and can adapt to the method for packing and the LED packaging of the led chip of LED wafer-level packaging by extra mould.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of method for packing of led chip comprises:
Growth is around the projection of lens forming area on substrate;
Led chip is installed on the described substrate, and described led chip is arranged in the lens forming area that is defined by described projection;
The flow-like encapsulating material of setting dosage is injected into described led chip top, and through solidifying to form the lens of the described led chip of encapsulation.
The method of growth projection comprises on substrate: any in deposit, oxidation, sputter, Reflow Soldering, plating or the silk screen printing, the manufacturing materials of described projection comprises metal, silicide, oxide, tin cream or silica gel.
The flat shape of described projection comprises any in circle, the square or polygon.
Described encapsulating material is silica gel, epoxy resin or silicone grease.
The lens that encapsulate described led chip are injected successively by two-layer at least encapsulating material and solidify to form, and the flow-like encapsulating material of setting dosage is injected into described led chip top, and the method for the lens through solidifying to form the described led chip of encapsulation is specially:
The ground floor encapsulating material is injected at top at described led chip, and it is solidify to form the ground floor lens of the described led chip of encapsulation;
On described ground floor lens, inject second layer encapsulating material, it is solidify to form the second layer lens of the described led chip of encapsulation; And the like.
The refractive index of at least two encapsulated layers that form on described led chip surface is successively decreased from inside to outside successively.
Described every layer of encapsulating material can contain and can be excited by described led chip and produce the fluorescent material of setting spectrum; Or wherein which floor encapsulating material is a transparent material, and other layer encapsulating material is to contain to be excited the encapsulating material that produces the fluorescent material of setting spectrum by described led chip.
Described projection is a plurality of concentric projectioies, and each projection is used for the forming area around a phosphor powder layer.
A kind of LED packaging, the lens that comprise the described led chip of encapsulation that forms after the led chip that when applying electric current, is used to produce light, the substrate that is used as described led chip substrate, the encapsulation material solidifies, also comprise: grow on the described substrate, around the projection of lens forming area, described led chip is arranged in the lens forming area that is defined by described projection.
Described encapsulating material is silica gel, epoxy resin or silicone grease.
Described lens comprise two-layer at least lens, and every layer of lens are injected by one deck encapsulating material and solidify to form.
Described every layer of lens all contain and can be excited by described led chip and produce the fluorescent material of setting spectrum; Or the ground floor lens of described lens are transparent encapsulation material, and other layer lens contain and can be excited by described led chip and produce the fluorescent material of setting spectrum.
The invention provides a kind of method for packing and LED packaging of led chip, this method is around the projection of lens forming area by growth on substrate, led chip is installed on the substrate, led chip is arranged in the lens forming area that is defined by this projection, the flow-like encapsulating material of setting dosage is injected into the led chip top, this encapsulating material will be limited by this projection, after solidifying, just form the lens that encapsulate this led chip again.Therefore, technical scheme of the present invention realized lens from the moulding process, and need not, and this technical scheme can adapt to high yield and LED wafer-level packaging cheaply by extra mould.Solved effectively LED encapsulation in the prior art complex process, cost height, production efficiency is low and can't realize the technical problem of wafer-level packaging.
Description of drawings
Fig. 1 is the schematic diagram of embodiment of the invention LED packaging;
Fig. 2 is the flow chart of embodiment of the invention LED method for packing;
Fig. 3 is the schematic diagram of embodiment of the invention led array encapsulation;
Fig. 4 a is the vertical view of the LED packaging of the single circular protrusions of the embodiment of the invention;
Fig. 4 b is the vertical view of the LED packaging of the single circular protrusions of another embodiment of the present invention;
Fig. 4 c is the vertical view of the LED packaging of the single circular protrusions of another embodiment of the present invention;
Fig. 5 is the vertical view of the LED packaging of the single square projection of another embodiment of the present invention;
Fig. 6 is the schematic diagram of another embodiment of the present invention LED packaging;
Fig. 7 is the flow chart of another embodiment of the present invention LED method for packing;
Fig. 8 is the vertical view of the LED packaging of two circular protrusions of another embodiment of the present invention;
Fig. 9 is the vertical view of the LED packaging of two square projectioies of another embodiment of the present invention.
Embodiment
In conjunction with the accompanying drawings the present invention is described in further detail below by embodiment.
Embodiment one:
Fig. 1 is the schematic diagram of embodiment of the invention LED packaging, please refer to Fig. 1, can know in the LED packaging of the embodiment of the invention to comprise: wafer 11, projection 12, lens 13, led chip 14, soldered ball 15 and conductive layer 16.Wherein led chip 14 is used for producing light when applying electric current, wafer 11 is as the substrate of led chip 14, substrate as the led chip substrate is not limited to wafer, can also be with pcb board, the BT plate, glass plate, ceramic wafer or plastic plate are as substrate, lens 13 are by forming after the encapsulation material solidifies, be used for packaging LED chips 14, projection 12 grows in the forming area that centers on lens 13 on the wafer 11, the retention device that is used for the encapsulation process encapsulating material, define the forming area of lens 13, led chip 14 is arranged in the forming area by projection 12 lens that define 13, preferably be positioned at the center of the forming area of lens 13, conductive layer 16 is produced on the wafer 11 in advance, and soldered ball 15 is used for led chip 14 upside-down mountings at conductive layer 16.
Introduce the making flow process of embodiment of the invention LED packaging below in detail, please refer to Fig. 2, Fig. 2 is the flow chart of embodiment of the invention LED method for packing:
S01, on wafer 11, make the insulating barrier (not shown), precipitation conductive layer 16 on insulating barrier; On conductive layer 16 and led chip 14, form salient point soldered ball 15.Wherein, substrate is not limited to wafer, can also be with pcb board, BT plate, glass plate, ceramic wafer or plastic plate as substrate, the material of conductive layer 16 selects self focusing to have aluminium, silver, copper, platinum, nickel or its alloy material of high reflectance, and the material of soldered ball 15 can be homogenous material, multilayer material, alloy or non-all-metal materials such as gold, copper, tin.
S02, adopt the grow projection 12 of annular of the method for deposit on wafer 11, projection 12 will center on the forming area of lens 13 as the retention device of encapsulating material in the encapsulation process next, be used to define the forming area of lens 13.Wherein, projection 12 flat shape can be circular, square a, polygon etc., make projection 12 size such as width, highly, diameter etc. can control by deposition process, the manufacture method of projection 12 has technologies such as vapor deposition process, oxidation technology, sputter, Reflow Soldering, plating, silk screen printing, and the manufacturing materials of projection 12 can be metal, silicide, oxide, tin cream, silica gel etc.
S03, led chip 14 is connected on by soldered ball 15 flip chip bondings on the conductive layer 16 of wafer 11, led chip 14 is arranged in the projection 12 lens forming areas that defined, and preferably is positioned at the center of the projection 12 lens forming areas that defined.
S04, the flow-like encapsulating material that will set dosage by needle tubing are injected into the top of led chip 14,12 restrictions of the projection that this flow-like encapsulating material will be patterned.The flow-like encapsulating material can be silica gel, epoxy resin or silicone grease, silica gel preferably, good because of the degree of adhesion height of silica gel, good airproof performance, thermal conductivity than epoxy resin height, thermal diffusivity, can absorb the inner tension force of encapsulation, last lens may be molded to dome-type, the light emission rate and the light type that have improved lens are optimized, and the durability of silica gel and transparency height, can provide essential durability and transparency for led chip, silica gel can also adapt to the Reflow Soldering high-temperature technology, has reduced the cost of lens moulding.
Modes such as S05, employing ultraviolet irradiation, heating or high-temperature baking are solidified this flow-like encapsulating material, make it form the lens 13 of this led chip 14 of encapsulation.Usually curing temperature is at 110 ℃-150 ℃, also can in encapsulating material, add light trigger and even the mixing to quicken the curing of encapsulating material, and the height of lens can be by the size and dimension of previously prepared projection, and the volume of shape encapsulating material is regulated.
In the present embodiment, making, the installation of chip and the sealing moulding process of lens of projection are all carried out on substrate, and need not by extra mould, and this method also can adapt to the LED wafer-level packaging.In actual application, the quantity of projection is not limited to one, in order to improve the light emission rate of LED device, can prepare a plurality of encapsulated layers that refractive index is successively decreased from inside to outside successively, be used for cushioning the transition of refractive index, therefore, at a plurality of encapsulated layers, a plurality of projectioies of can growing in advance on wafer, each projection is used to define an encapsulated layer.
Please refer to Fig. 3, Fig. 3 is the schematic diagram of embodiment of the invention led array encapsulation, led array is made of a plurality of led chips 14 usually, select wafer 11 for use as the substrate of led array substrate, on wafer 11, be provided with led array in each led chip 14 distinguish corresponding protruding (not shown), each projection is used to define a lens forming area, these led chips are installed on the wafer, and finish and be electrically connected, form led array, the encapsulating material that will be used for the lens moulding again is injected into the top of each led chip, through solidifying to form the lens 13 of each led chip of encapsulation, has so just finished the whole encapsulation process of wafer scale led array.The present invention can also be integrated in function control chips such as current/voltage control module and antistatic module among the wafer or assemble thereon, can realize the chip-scale light source of system integration difference in functionality like this.The encapsulation of LED monocrystalline or polycrystalline is to finish on wafer entirely, need not single chips individual packages, and simple in structure, with existing semiconductor technology compatibility mutually, realize automation and large-scale production easily, high yield, encapsulating products cheaply can be provided.
In the present embodiment with on wafer 11 growth single circular protrusions 12 be example, please refer to Fig. 4 a, Fig. 4 b, Fig. 4 c, Fig. 4 a is the vertical view of the LED packaging of the single circular protrusions of the embodiment of the invention, Fig. 4 b is the vertical view of the LED packaging of the single circular protrusions of another embodiment of the present invention, and Fig. 4 c is the vertical view of the LED packaging of the single circular protrusions of another embodiment of the present invention; By Fig. 4 a, Fig. 4 b, Fig. 4 c as can be known, the wiring of conductive layer 16 has following several mode in the present embodiment: shown in Fig. 4 a is between conductive layer 16 and the projection 12 less space to be arranged, this space can be ignored with respect to the size of projection 12, shown in Fig. 4 b is that conductive layer 16 is overlying on the projection 12, shown in Fig. 4 c is that conductive layer places under the projection 12, and Fig. 4 b and Fig. 4 c are that conductive layer 16 is overlapped with projection 12.Three kinds of different position relations can be selected for use according to the manufacturing materials of projection, for example: the manufacturing materials of projection is a conducting metal, then select for use the mode shown in Fig. 4 a more convenient, if select the mode of Fig. 4 b, Fig. 4 c, may do insulation in the overlapping region of conductive layer 16 and projection 12 and handle, such as deposition insulating layer; If the manufacturing materials of projection is insulating material such as silica gel, oxide, above-mentioned three kinds of modes can adopt.
The flat shape of projection 12 is not limited to circle, projection 12 flat shape can be circular, square a, polygon etc., Fig. 5 is the vertical view of the LED packaging of the single square projection of another embodiment of the present invention, in Fig. 5, a kind of mode of conductive layer 16 wirings only is shown, be between conductive layer 16 and the projection 12 less space to be arranged, this space can be ignored with respect to the size of projection 12, but it is a kind of not limit to this, for square projection, the wire laying mode of conductive layer 16 has above-mentioned multiple wire laying mode as circular protrusions.
The present invention can also do further improvement to the foregoing description, Fig. 6 is the schematic diagram of another embodiment of the present invention LED packaging, please refer to Fig. 6, can know in the LED packaging of the embodiment of the invention to comprise: wafer 11, protruding 12a, protruding 12b, the first hyaline layer 13a, yellow fluorescence bisque 13b, red fluorescence bisque 13c, blue chip 14, soldered ball 15 and conductive layer 16.Blue chip 14 refers to produce the led chip of blue light when applying electric current, wafer 11 is as the substrate of blue chip 14, and the substrate that is used as substrate is not limited to wafer, can also be with pcb board, BT plate, glass plate, ceramic wafer or plastic plate as substrate; The first hyaline layer 13a selects for use the relatively large silica gel of refractive index of setting dosage to form as encapsulation material solidifies; Yellow fluorescence bisque 13b is by the yellow fluorescent powder of pre-configured setting dosage and silica gel is mixing cured forms; Red fluorescence bisque 13c is by pre-configured red fluorescence powder and silica gel is mixing cured forms, in the present embodiment, yellow fluorescent powder refers to the light wave peak scope 570nm-600nm that its back that is excited is sent out, and the light wave peak scope of sending out after red fluorescence powder refers to be excited is 620nm-760nm; Above-mentioned two-layer phosphor powder layer corresponding to present embodiment, present embodiment on wafer 11, the grow protruding 12a and the 12b of two concentric annulars, projection 12b is around the forming area of yellow fluorescence bisque 13b, be used to define the forming area of yellow fluorescence bisque 13b, projection 12a is around the forming area of red fluorescence bisque 13c, be used to define the forming area of red fluorescence bisque 13c, blue chip 14 is positioned at by protruding 12a, in the zone that 12b defines, preferably be positioned at the first hyaline layer 13a, the center of the forming area of yellow fluorescence bisque 13b and red fluorescence bisque 13c; Conductive layer 16 is produced on the wafer 11 in advance, and soldered ball 15 is used for blue chip 14 upside-down mountings at conductive layer 16.
Introduce the making flow process of LED packaging in the embodiment of the invention below in detail, see also Fig. 7, Fig. 7 is the flow chart of another embodiment of the present invention LED method for packing:
S11, make the insulating barrier (not shown) on wafer 11, precipitation conductive layer 16 on insulating barrier forms salient point soldered ball 15 on conductive layer 16 and blue chip 14.Wherein, substrate is not limited to wafer, can also be with pcb board, BT plate, glass plate, ceramic wafer or plastic plate as substrate, the material of conductive layer 16 selects self focusing to have aluminium, silver, copper, platinum, nickel or its alloy material of high reflectance, and the material of soldered ball 15 can be homogenous material, multilayer material, alloy or non-all-metal materials such as gold, copper, tin.
S12, adopt the method for deposit on wafer 11, the grow protruding 12a and the 12b of two concentric annulars, will be used to define the forming area of phosphor powder layer as the retention device of phosphor powder layer in the encapsulation process next.Wherein, the flat shape of projection 12a and 12b can be circular, square, polygon equidimension such as width, highly, diameter etc. can control by deposition process, manufacture method has technologies such as vapor deposition process, oxidation technology, sputter, Reflow Soldering, plating, silk screen printing, and manufacturing materials can be metal, silicide, oxide, tin cream, silica gel etc.
S13, blue chip 14 is connected on the conductive layer 16 by soldered ball 15 flip chip bondings, blue chip is arranged in the lens forming area that projection is defined, and preferably is positioned at the center of the lens forming area that this two projection defined.
S14, the viscosity of selecting doses for use is lower and silica gel that refractive index (n1, scope is 1.4＜n1＜2) is bigger as encapsulating material, be injected into the top of blue chip 14 by needle tubing.This layer injection be a spot of silica gel.
S15, according to the silica gel character and the actual needs that adopt, adopt modes such as ultraviolet irradiation, heating or high-temperature baking to solidify this encapsulating material to a certain degree, make it form the first hyaline layer 13a of this blue chip 14 of encapsulation.Usually curing temperature is at 110 ℃-150 ℃, the formed first hyaline layer 13a is very thin one deck, the distance that its peak exceeds this blue chip 14 preferably is no more than 1mm, the formed first hyaline layer 13a of this step effectively separates fluorescent material with chip, reduce the influence of chip heating to fluorescent material, simultaneously, because what it adopted is that the bigger silica gel of refractive index is as encapsulating material, can form refractive index gradient with the phosphor powder layer of the low-refraction of follow-up formation, thereby improve light extraction efficiency.
S16, pre-configured mixed the outer surface that the yellow fluorescent powder encapsulating material that forms drips to the first hyaline layer 13a that forms among the step S15 by a certain percentage by yellow fluorescent powder and silica gel by needle tubing.The refractive index n 2 of the silica gel that this step is used, scope is 1.4＜n2＜2.0, satisfies n2＜n1.
S17, yellow fluorescent powder encapsulating material are centered on by protruding 12b, according to the silica gel character and the actual needs that adopt, adopt modes such as ultraviolet irradiation, heating or high-temperature baking to solidify this yellow fluorescent powder encapsulating material, make it form yellow fluorescence bisque 13b to a certain degree.The height of yellow fluorescence bisque 13b can pass through the size and dimension of previously prepared protruding 12b, and the volume of the yellow fluorescent powder encapsulating material that is injected is regulated.
S18, pre-configured mixed the outer surface that the red fluorescence powder encapsulating material that forms drips to the yellow fluorescence bisque 13b that forms among the step S16 by a certain percentage by red fluorescence powder and silica gel by needle tubing, refractive index (the n3 of this layer silica gel, scope is 1.4＜n3＜2.0), satisfy n3＜n2＜n1.
S19, red fluorescence powder encapsulating material are centered on by protruding 12a, according to the silica gel character and the actual needs that adopt, adopt modes such as ultraviolet irradiation, heating or high-temperature baking to solidify this red fluorescence powder encapsulating material, make it form red fluorescence bisque 13c to a certain degree.The height of red fluorescence bisque 13c can pass through the size and dimension of previously prepared protruding 12a, and the volume of the red fluorescence powder encapsulating material that is injected is regulated.
In the present embodiment, can be excited by led chip and produce the fluorescent material of setting spectrum and comprise and to be excited by led chip and produce the fluorescent material of setting light wave peak scope etc., packed in the present embodiment is blue-light LED chip, can select the yellow fluorescent powder of the light wave peak scope 570nm-600nm that the back that is excited sends out and the light wave peak scope that the back that is excited is sent out for use is the red fluorescence powder of 620nm-760nm, yellow fluorescence bisque 13b finishes the most important one deck of photochromic conversion, so yellow fluorescent powder concentration is big slightly, red fluorescence bisque 13c compensates the ruddiness in the spectrum, so red fluorescence powder concentration is less, be unlikely to obviously to reduce light extraction efficiency.In the present embodiment, preferably the outer surface at the first hyaline layer 13a injects yellow fluorescent powder encapsulating material formation yellow fluorescence bisque 13b earlier, on yellow fluorescence bisque 13b, inject the red fluorescence powder encapsulating material again, form red fluorescence bisque 13c, also can inject the red fluorescence powder encapsulating material earlier at the outer surface of the first hyaline layer 13a, form red fluorescence bisque 13c earlier, inject the yellow fluorescent powder encapsulating material at red fluorescence bisque 13c outer surface again, form yellow fluorescence bisque 13b.The manufacture method of the first hyaline layer 13a can be in the present embodiment, the dosage of control transparent encapsulation material makes its automatic moulding be encapsulated into this blue chip just, and the distance that peak exceeds this blue-light LED chip preferably is no more than 1mm, the projection of also can growing separately on wafer is used to define the forming area of this first hyaline layer 13a.The encapsulating material that present embodiment is selected for use is not limited to silica gel, can also be epoxy resin or silicone grease, and the fluorescent material encapsulating material also is not limited to the mixture of fluorescent material and silica gel, can also be the mixture of fluorescent material and epoxy resin or fluorescent material and silicone grease.Silica gel preferably, good because of the degree of adhesion height of silica gel, good airproof performance, thermal conductivity than epoxy resin height, thermal diffusivity, can absorb the inner tension force of encapsulation, last lens may be molded to dome-type, the light emission rate and the light type that have improved lens are optimized, and the durability of silica gel and transparency height, can be for led chip provide essential durability and transparency, silica gel can also adapt to the Reflow Soldering high-temperature technology, has reduced the cost of lens moulding.Present embodiment also can add light trigger and evenly mixing at the encapsulating material that injects, to quicken the curing of encapsulating material.In the present embodiment, making, the installation of chip and the sealing moulding process of lens of projection are all carried out on wafer, and need not by extra mould, and this method also can adapt to the LED wafer-level packaging.
Certainly, light conversion requirement according to LED, the encapsulation blue-light LED chip can be selected other a kind of, two kinds, the color more than three kinds or three kinds for use, correspondingly form one deck, two-layer, the phosphor powder layer more than three layers or three layers, accordingly, the projection that is used to define the phosphor powder layer forming area can be one, two or more.Packed in the practical application can be blue-light LED chip, it also can be the ultraviolet leds chip, when packed when being the ultraviolet leds chip, can select for use excited by this ultraviolet leds chip and produce ruddiness the fluorescent material encapsulating material, can be excited by this ultraviolet leds chip and produce the fluorescent material encapsulating material of green glow and can be excited by this ultraviolet leds chip and the fluorescent material encapsulating material that produces blue light is made three layers of phosphor powder layer, these three layers of phosphor powder layers order from inside to outside preferably: blue phosphor layer, green phosphor layer, red fluorescence bisque; Perhaps, can select for use excited by this ultraviolet leds chip and produce ruddiness the fluorescent material encapsulating material, can be excited by this ultraviolet leds chip and produce green glow the fluorescent material encapsulating material, can be excited by this ultraviolet leds chip and produce the fluorescent material encapsulating material of blue light and can be excited by this ultraviolet leds chip and the fluorescent material encapsulating material that produces gold-tinted is made four layers of phosphor powder layer, these four layers of phosphor powder layers order from inside to outside preferably: blue phosphor layer, green phosphor layer, yellow fluorescence bisque, red fluorescence bisque; Certainly, light conversion requirement according to LED, encapsulation ultraviolet leds chip can be selected other a kind of, two kinds, the color more than three kinds or three kinds for use, correspondingly form one deck, two-layer, the phosphor powder layer more than three layers or three layers, accordingly, the projection that is used to define the phosphor powder layer forming area can be one, two or more.
Fig. 8 is the vertical view of the LED packaging of two circular protrusions of another embodiment of the present invention, please refer to Fig. 8, in Fig. 8, a kind of mode of conductive layer 16 wirings only is shown, be that conductive layer 16 is overlying on protruding 12a and the 12b, this is a kind of but do not limit to, for two or more circular protrusions, the wire laying mode of conductive layer 16 has above-mentioned multiple wire laying mode as single circular protrusions.
Fig. 9 is the vertical view of the LED packaging of two square projectioies of another embodiment of the present invention, please refer to Fig. 9, in Fig. 9, a kind of mode of conductive layer 16 wirings only is shown, be that conductive layer 16 is overlying on protruding 12a and the 12b, this is a kind of but do not limit to, for two or more square projectioies, the wire laying mode of conductive layer 16 has above-mentioned multiple wire laying mode as single circular protrusions.
Above content be in conjunction with concrete execution mode to further describing that the present invention did, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (12)
1. the method for packing of a led chip is characterized in that, comprising:
Growth is around the projection of lens forming area on substrate;
Led chip is installed on the described substrate, and described led chip is arranged in the lens forming area that is defined by described projection;
The flow-like encapsulating material of setting dosage is injected into described led chip top, and through solidifying to form the lens of the described led chip of encapsulation.
2. the method for claim 1, it is characterized in that, the method of growth projection comprises on substrate: any in deposit, oxidation, sputter, Reflow Soldering, plating or the silk screen printing, the manufacturing materials of described projection comprises metal, silicide, oxide, tin cream or silica gel.
3. the method for claim 1 is characterized in that, the flat shape of described projection comprises any in circle, the square or polygon.
4. the method for claim 1 is characterized in that, described encapsulating material is silica gel, epoxy resin or silicone grease.
5. as each described method in the claim 1 to 4, it is characterized in that, the lens that encapsulate described led chip are injected successively by two-layer at least encapsulating material and solidify to form, the flow-like encapsulating material of setting dosage is injected into described led chip top, and the method for the lens through solidifying to form the described led chip of encapsulation is specially:
The ground floor encapsulating material is injected at top at described led chip, and it is solidify to form the ground floor lens of the described led chip of encapsulation;
On described ground floor lens, inject second layer encapsulating material, it is solidify to form the second layer lens of the described led chip of encapsulation; And the like.
6. method as claimed in claim 5 is characterized in that, the refractive index of at least two encapsulated layers that form on described led chip surface is successively decreased from inside to outside successively.
7. method as claimed in claim 6 is characterized in that, described every layer of encapsulating material all contains and can be excited by described led chip and produce the fluorescent material of setting spectrum; Or the ground floor encapsulating material is transparent material, and other layer encapsulating material is to contain to be excited the encapsulating material that produces the fluorescent material of setting spectrum by described led chip.
8. method as claimed in claim 7 is characterized in that, described projection is a plurality of concentric projectioies, and each projection is used for the forming area around a phosphor powder layer.
9. LED packaging, the lens that comprise the described led chip of encapsulation that forms after the led chip that when applying electric current, is used to produce light, the substrate that is used as described led chip substrate, the encapsulation material solidifies, it is characterized in that, also comprise: grow on the described substrate, around the projection of lens forming area, described led chip is arranged in the lens forming area that is defined by described projection.
10. LED packaging as claimed in claim 9 is characterized in that, described encapsulating material is silica gel, epoxy resin or silicone grease.
11. as claim 9 or 10 described LED packagings, it is characterized in that described lens comprise two-layer at least, every layer of lens are injected by one deck encapsulating material and solidify to form.
12. LED packaging as claimed in claim 11 is characterized in that, described every layer of lens all contain and can be excited by described led chip and produce the fluorescent material of setting spectrum; Or the ground floor lens of described lens are transparent encapsulation material, and other layer lens contain and can be excited by described led chip and produce the fluorescent material of setting spectrum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106198728A CN102130235B (en) | 2010-12-31 | 2010-12-31 | Method and device for packaging LED chip |
Applications Claiming Priority (1)
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| CN102779925A (en) * | 2012-07-20 | 2012-11-14 | 华中科技大学 | Substrate structure and method for coating fluorescent powder packaged in diode by using substrate structure |
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| CN105355729B (en) * | 2015-12-02 | 2018-06-22 | 佛山市国星半导体技术有限公司 | LED chip and preparation method thereof |
| CN109729746A (en) * | 2016-09-01 | 2019-05-07 | 奥斯兰姆奥普托半导体股份有限两合公司 | Device with carrier and optoelectronic components |
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