CN102130200A - Indium gallium arsenide (InGaAs) infrared detector for wide detection wave bands - Google Patents
Indium gallium arsenide (InGaAs) infrared detector for wide detection wave bands Download PDFInfo
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- CN102130200A CN102130200A CN 201010604144 CN201010604144A CN102130200A CN 102130200 A CN102130200 A CN 102130200A CN 201010604144 CN201010604144 CN 201010604144 CN 201010604144 A CN201010604144 A CN 201010604144A CN 102130200 A CN102130200 A CN 102130200A
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- ingaas
- infrared detector
- infrared detectors
- inp
- wave bands
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Abstract
The invention discloses an indium gallium arsenide (InGaAs) infrared detector for wide detection wave bands, relates to the application field of photonic materials and devices and solves the problems that the conventional InGaAs infrared detector has a narrow detection range and an InGaAs infrared detector with three wave bands is needed to cover the detection range of 1.0mu m to 2.6mu m. According to the invention, a pin structure is formed by adopting an n-type InP substrate, and taking In0.82Ga0.18As as an absorption layer, namely i-layer, and p-type InP as a covering layer, so that the detection range of 1.0mu m to 2.6mu m can be detected by an InGaAs detector. The indium gallium arsenide (InGaAs) infrared detector is widely applied in the field of photonic materials and devices.
Description
Technical field
The present invention relates to the application of photoelectron material and device.Be specifically related to a kind of follow-on InGaAs Infrared Detectors detecting band expansion.
Background technology
At present in the design of InGaAs infrared detector structure, particularly in the semiconductor photovoltaic type Infrared Detectors, all adopt the p-i-n structure, cap rock is p type InAsP respectively, absorbed layer is that the i layer is the InGaAs of different component, and the n layer is the InP substrate, when wavelength at 1.7 μ m-2.6 μ m, most employing different component InAsP make the p type layer of device and the InGaAs of different component makes absorbed layer, and must have the InGaAs detector of three wave bands to come work in order to cover this 1.0 μ m-2.6 μ m investigative range.
Summary of the invention
The present invention is narrow for the investigative range that solves existing InGaAs Infrared Detectors, covers the problem that 1.0 μ m-2.6 μ m investigative ranges must be come work with the InGaAs detector of three wave bands, and a kind of InGaAs Infrared Detectors of wide detecting band is provided.
The InGaAs Infrared Detectors of wide detecting band, its structure is: the In of the involuntary doping of 3 μ m of growing successively on n type InP substrate
0.82Ga
0.18As forms the pin panel detector structure as the InP epitaxial loayer that i layer, InP resilient coating, 1 μ m mix Zn.
The principle of the invention: the present invention is the investigative range of expansion InGaAs Infrared Detectors, and a kind of new panel detector structure is provided, and an InGaAs detector can be surveyed from 1.0 μ m-2.6 mu m ranges.Adopt n type InP substrate, In
0.82Ga
0.18As is as absorbed layer, and InP is as cap rock for the n type, at the In of the involuntary doping of InP substrate growth one deck
0.82Ga
0.18As the i layer, utilizes the InP of two-step method in growth one deck doping of Zn then, constitutes the pin structure, uses an InGaAs detector just can survey 1.0 μ m-2.6 mu m ranges like this.
Beneficial effect of the present invention: the structure of broadband Infrared Detectors of the present invention, surveying 1.0 μ m-2.6 mu m ranges only needs a detector can realize that the present invention has realized broadband investigative range.
Description of drawings
Fig. 1 is a pin panel detector structure schematic diagram of the present invention.
Embodiment
Embodiment one, in conjunction with Fig. 1 present embodiment is described, its structure of InGaAs Infrared Detectors of wide detecting band is: the In of the involuntary doping of 3 μ m of growing successively on n type InP substrate
0.82Ga
0.18As forms the pin panel detector structure as the InP epitaxial loayer that i layer, continued growth InP resilient coating, growth 1 μ m mix Zn.
Present embodiment is at first being mixed the n type InP substrate of S, adopts the In of MOCVD system 3 microns involuntary doping of 550 ℃ of growth one decks on the InP substrate
0.82Ga
0.18As is as the i layer, reduce temperature then, the InP of about 80 nanometers of growth one deck when temperature is reduced to 430 ℃, elevated temperature to 580 ℃ then, resilient coating InP annealing recrystallization in temperature-rise period discharges the stress that is caused by lattice mismatch, become the interface of next step growth, at 580 ℃ of constant temperature 3-5 minutes, continued growth 1 μ m mixed the InP epitaxial loayer of Zn then, formed the pin panel detector structure.
Claims (6)
1. the InGaAs Infrared Detectors of wide detecting band is characterized in that, the In of the involuntary doping of 3 μ m of growing successively on n type InP substrate
0.82Ga
0.18As forms the pin panel detector structure as the InP epitaxial loayer that i layer, InP resilient coating, 1 μ m mix Zn.
2. the InGaAs Infrared Detectors of wide detecting band according to claim 1 is characterized in that, the In of the involuntary doping of described growth 3 μ m
0.82Ga
0.18The growth temperature of As is 520 ℃～550 ℃.
3. the InGaAs Infrared Detectors of wide detecting band according to claim 2 is characterized in that, the In of the involuntary doping of described growth 3 μ m
0.82Ga
0.18The growth temperature of As is 550 ℃.
4. the InGaAs Infrared Detectors of wide detecting band according to claim 1 is characterized in that, the temperature of grown InP resilient coating is 420 ℃～450 ℃.
5. the InGaAs Infrared Detectors of wide detecting band according to claim 4 is characterized in that, the temperature of grown InP resilient coating is 430 ℃.？
6. the InGaAs Infrared Detectors of wide detecting band according to claim 1 is characterized in that, the 1 μ m that grows mixes before the InP epitaxial loayer of Zn, and growth temperature is grown after rising to 580 ℃ of constant temperature 3-5 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010604144 CN102130200A (en) | 2010-12-24 | 2010-12-24 | Indium gallium arsenide (InGaAs) infrared detector for wide detection wave bands |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010604144 CN102130200A (en) | 2010-12-24 | 2010-12-24 | Indium gallium arsenide (InGaAs) infrared detector for wide detection wave bands |
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| CN102130200A true CN102130200A (en) | 2011-07-20 |
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| CN 201010604144 Pending CN102130200A (en) | 2010-12-24 | 2010-12-24 | Indium gallium arsenide (InGaAs) infrared detector for wide detection wave bands |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826423A (en) * | 2016-05-20 | 2016-08-03 | 中山市厚源电子科技有限公司 | Wide-band infrared detector |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1228478C (en) * | 2002-11-13 | 2005-11-23 | 中国科学院物理研究所 | Method for preparing gallium nitride single crystal film |
| CN101207163A (en) * | 2006-12-21 | 2008-06-25 | 中国科学院半导体研究所 | InGaAs / InAlAs coupling quantum spot infrared detector and preparation method thereof |
-
2010
- 2010-12-24 CN CN 201010604144 patent/CN102130200A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1228478C (en) * | 2002-11-13 | 2005-11-23 | 中国科学院物理研究所 | Method for preparing gallium nitride single crystal film |
| CN101207163A (en) * | 2006-12-21 | 2008-06-25 | 中国科学院半导体研究所 | InGaAs / InAlAs coupling quantum spot infrared detector and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 《红外与激光工程》 20091231 李永富等 InP/InxGa1-xAs异质结构中Zn元素的扩散机制 第951-956页 1-6 第38卷, 2 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826423A (en) * | 2016-05-20 | 2016-08-03 | 中山市厚源电子科技有限公司 | Wide-band infrared detector |
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Application publication date: 20110720 |