CN202103077U - T-Hz detector structure based on photonic crystal and superlattice APD - Google Patents
T-Hz detector structure based on photonic crystal and superlattice APD Download PDFInfo
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- CN202103077U CN202103077U CN 201120150859 CN201120150859U CN202103077U CN 202103077 U CN202103077 U CN 202103077U CN 201120150859 CN201120150859 CN 201120150859 CN 201120150859 U CN201120150859 U CN 201120150859U CN 202103077 U CN202103077 U CN 202103077U
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Abstract
A T-Hz detector structure based on photonic crystal and superlattice APD (Avalanche Photo Diode) comprises a first electrode, a p+GaAs contact layer, a GaAs/AlxGal-xAs superlattice layer, an n+GaAs buffer layer, a second electrode, and an n+GaAs substrate material layer, and is characterized in that a photonic crystal layer grows on the p+GaAs contact layer of the GaAs/AlxGal-xAs superlattice layer; the periodicity of the superlattice layer is within 20 to 30 and the constituent value x is within 0.01 to 0.2, and materials in layers of the superlattice structure are not mixed; the mixing concentration of the buffer layer is higher than that of the substrate material layer; and the first electrode is prepared on the contact layer and the second electrode is prepared on the substrate material layer. In the T-Hz detector structure, the photonic crystal and the detector are integrated, so as to overcome the defects of the conventional optical filter and detector separated scheme, such as complicate structure and high preparation technology difficulty, reduce influences caused by background radiation, and improve noise equivalent power.
Description
Technical field
The utility model relates to a kind of terahertz detector structure based on photonic crystal and superlattice avalanche photodiode (APD), belongs to the Terahertz technical field of detection.
Background technology
In the electromagnetic spectrum microwave and infrared between part be called Terahertz (Terahertz; THz) ripple or terahertz emission; Its frequency is 0.1～10 Terahertz; Corresponding wave-length coverage is 3000～30 microns, and terahertz emission has the characteristic that power is low, the thermal radiation background noise big, the water vapour decay is serious, has determined that terahertz detector must possess very high detectivity and frequency resolution.At present, the method for detection terahertz emission mainly contains the photon detection method of thermal radiation probe method, Fourier transform spectrometry (FTS), time-domain spectroscopy method, heterodyne system probe method and based semiconductor material.Wherein, the terahertz detector of based semiconductor material belongs to the arrowband detector, has that response speed is fast, technical maturity, volume are little, be easy to advantages such as integrated.Terahertz semiconductor detector material and structure commonly used have GaAs based schottky diode, AlGaN/GaN Schottky diode, VO
xBolometer, GaAs/AlGaAs heterojunction detector etc.In recent years, quality is high, stability is strong, large-area GaAs/AlGaAs heterojunction semiconductor material preparation technology good uniformity reaches its maturity.GaAs/AlGaAs heterojunction semiconductor material can be used for making superlattice structure, forms the avalanche photo diode (APD) with internal gain effect, is applied to terahertz detector.Terahertz emission belongs to small-signal; Be vulnerable to the influence of background emission; Present terahertz detector generally adopts the discrete mode of filter+detector, and reducing the influence of background emission, there are shortcomings such as complex structure and preparation technology's difficulty are big in this discrete mode.
Photonic crystal is a kind of cycle film system that alternately is formed by stacking the dielectric constant material different, adopts the traditional optical film preparing technology to obtain.Through suitable selection to photonic crystal dielectric constant and lattice period, the electromagnetic wave in some frequency range can not be propagated in photonic crystal, this frequency range is called forbidden photon band.Through adjusting, can form the super narrow bandpass filter to forbidden photon band.Existing terahertz detector mostly adopts discrete mode, does not see the report that adopts photonic crystal.
Summary of the invention
Problem to the prior art existence; The device architecture that the utility model provides a kind of photonic crystal and superlattice APD to become one; Can in selected terahertz emission wave band, improve detectivity, and can overcome discrete mode complex structure of existing filter+detector and the big shortcoming of preparation technology's difficulty.
The terahertz detector structure based on photonic crystal and superlattice APD that the utility model provides comprises first electrode, p+GaAs contact layer, GaAs/Al
xGa
1-xAs superlattice layer, n+GaAs resilient coating, second electrode and n+GaAs substrate material layer is characterized in that at GaAs/Al
xGa
1-xGrown photonic crystal layer on the p+GaAs contact layer of As superlattice layer; Wherein, The transmissivity of photonic crystal can use mathematics Autocad bag MATLAB programming to calculate, and according to selected terahertz emission wave band, utilizes this method can confirm the thickness and the lattice period number of layer of photonic crystals; GaAs/Al
xGa
1-xThe periodicity of As superlattice layer is between 20～50, and x is between 0.01～0.2 for the component value, GaAs/Al
xGa
1-xThe layers of material of As superlattice structure undopes, and its function is the amplification layer as APD; Resilient coating and substrate material layer are the n+GaAs material, but their doping content is different, and the doping content of resilient coating is higher than the doping content of substrate material layer; Preparation first electrode on the p+GaAs contact layer, preparation second electrode on the n+GaAs substrate material layer.
The terahertz detector structure based on photonic crystal and superlattice APD that the utility model provides has reached following beneficial effect: photonic crystal and detector are become one; Discrete mode complex structure of existing filter+detector and the big shortcoming of preparation technology's difficulty have been overcome; Reduce the influence of background emission, improved noise equivalent power.
Description of drawings
Fig. 1 is the structural representation of existing superlattice APD terahertz detector.
Fig. 2 is the terahertz detector structural representation (embodiment one structural representation) of the utility model based on photonic crystal and superlattice APD.
Fig. 3 is embodiment two structural representations.
Fig. 4 is embodiment three structural representations.
Among the figure, 1. layer of photonic crystals, 2. first electrode, 3.p+GaAs contact layer, 4.GaAs/Al
xGa
1-xThe As superlattice layer, 5.n+GaAs resilient coating, 6. second electrode, 7.n+GaAs substrate material layer.
Embodiment
Below in conjunction with accompanying drawing, through embodiment the utility model is explained further details, but the protection range of the utility model is not limited to following embodiment.
Fig. 1 is the structure of existing superlattice APD terahertz detector, by first electrode 2, p+GaAs contact layer 3, GaAs/Al
xGa
1-xAs superlattice layer 4, n+GaAs resilient coating 5, second electrode 6 and n+GaAs substrate material layer 7 are formed.
Embodiment one:
Fig. 2 is a kind of terahertz detector structure of the utility model based on photonic crystal and superlattice APD, includes first electrode 2, p+GaAs contact layer 3, GaAs/Al
xGa
1-xAs superlattice layer 4, n+GaAs resilient coating 5, second electrode 6 and n+GaAs substrate material layer 7 is characterized in that at GaAs/Al
xGa
1-xGrown photonic crystal layer 1 on the p+GaAs contact layer of As superlattice layer.Its concrete structure is: be on the n+GaAs substrate material layer 7 of 500 μ m at thickness, growing successively with molecular beam epitaxy (MBE) method, (doping content is 1 * 10 in the Si doping
18Cm
-3) n+GaAs resilient coating 5 (thickness is 0.7 μ m), GaAs/Al
0.01Ga
0.99As superlattice layer 4 (periodicity is 30) and Be mix, and (doping content is 5 * 10
18Cm
-3) p+GaAs contact layer 3 (thickness is 0.1 μ m), the method that adopts thermal evaporation then is at GaAs/Al
0.01Ga
0.99Superficial growth one deck SiO of As superlattice layer 4
2/ Ta
2O
5Layer of photonic crystals 1 utilizes conventional semiconductor technology to accomplish the preparation of first electrode 2 and second electrode 6 at last, and electrode material is AuGeNi alloy (thickness is 0.7 μ m), obtains the terahertz detector of the utility model based on photonic crystal and superlattice APD.
Embodiment two:
Fig. 3 is the other a kind of terahertz detector structure of the utility model based on photonic crystal and superlattice APD.First electrode 2 adopts square structure in the present embodiment, but GaAs/Al
0.20Ga
0.80Al component in the As superlattice layer is different, and all the other structures are similar with embodiment one: be on the n+GaAs substrate of 500 μ m at thickness at first, (doping content is 1 * 10 in the Si doping to utilize the MBE method to grow successively
18Cm
-3) n+GaAs resilient coating 5 (thickness is 0.7 μ m), GaAs/Al
0.20Ga
0.80As superlattice layer 4 (periodicity is 20) and Be mix, and (doping content is 5 * 10
18Cm
-3) p+GaAs contact layer 3 (thickness is 0.1 μ m), adopt the superficial growth one deck SiO of the method for thermal evaporation then at superlattice layer 4
2/ Ta
2O
5Layer of photonic crystals 1.Leave a square-shaped electrode hole at layer of photonic crystals 1; Sputter AuGeNi alloy electrode layer (thickness is 0.7 μ m) in electrode hole then; Utilize conventional semiconductor technology to accomplish the preparation of first electrode 2 and second electrode 6 at last; Electrode material is AuGeNi alloy (thickness is 0.7 μ m), obtains the terahertz detector of the utility model based on photonic crystal and superlattice APD.
Embodiment three:
The structure of embodiment three is as shown in Figure 4, and first electrode 2 adopts loop configuration, is on the n+GaAs substrate of 500 μ m at thickness at first, and (doping content is 1 * 10 in the Si doping to utilize the MBE method to grow successively
18Cm
-3) n+GaAs resilient coating 5 (thickness is 0.7 μ m), GaAs/Al
0.01Ga
0.99As superlattice layer 4 (periodicity is 30) and Be mix, and (doping content is 5 * 10
18Cm
-3) p+GaAs contact layer 3 (thickness is 0.1 μ m), adopt the superficial growth one deck SiO of the method for thermal evaporation then at superlattice layer 4
2/ Ta
2O
5Layer of photonic crystals 1.Leave the annular electrode hole to layer of photonic crystals; Sputter AuGeNi alloy electrode layer 2 (thickness is 0.7 μ m) in electrode hole then; Utilize conventional semiconductor technology to accomplish the preparation of first electrode 2 and second electrode 6 at last; Electrode material is AuGeNi alloy (thickness is 0.7 μ m), obtains the terahertz detector of the utility model based on photonic crystal and superlattice APD.
Claims (4)
1. based on the terahertz detector structure of photonic crystal and superlattice avalanche photodiode, comprise first electrode (2), p+GaAs contact layer (3), GaAs/Al
xGa
1-xAs superlattice layer (4), n+GaAs resilient coating (5), second electrode (6) and n+GaAs substrate material layer (7) is characterized in that: at GaAs/Al
xGa
1-xGrown photonic crystal layer (1) on the p+GaAs contact layer (3) of As superlattice layer (4).
2. terahertz detector according to claim 1 is characterized in that: GaAs/Al
xGa
1-xThe periodicity of As superlattice layer (4) is between 20～50, and x is between 0.01～0.2 for the component value, GaAs/Al
xGa
1-xThe layers of material of As superlattice structure undopes.
3. terahertz detector according to claim 1 is characterized in that: the doping content of n+GaAs resilient coating (5) is higher than the doping content of n+GaAs substrate material layer (7).
4. terahertz detector according to claim 1 is characterized in that: leave electrode hole at layer of photonic crystals (1), preparation first electrode (2) on the p+GaAs contact layer in electrode hole.
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| CN 201120150859 CN202103077U (en) | 2011-05-12 | 2011-05-12 | T-Hz detector structure based on photonic crystal and superlattice APD |
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|---|---|---|---|
| CN 201120150859 CN202103077U (en) | 2011-05-12 | 2011-05-12 | T-Hz detector structure based on photonic crystal and superlattice APD |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628805A (en) * | 2012-04-26 | 2012-08-08 | 大连理工大学 | Microfluidic chip fluorescence detection system based on photonic crystal filter plates |
| CN104916713A (en) * | 2015-05-28 | 2015-09-16 | 东南大学 | Gallium-nitride-based ultraviolet detector with photonic crystals acting as incident window |
| CN105589119A (en) * | 2016-02-29 | 2016-05-18 | 中国科学院半导体研究所 | Terahertz photoconductive antenna epitaxial structure provided with DBR layer and production method |
| CN111289104A (en) * | 2020-03-03 | 2020-06-16 | 中国科学院物理研究所 | Terahertz energy detector, detection system and application |
-
2011
- 2011-05-12 CN CN 201120150859 patent/CN202103077U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628805A (en) * | 2012-04-26 | 2012-08-08 | 大连理工大学 | Microfluidic chip fluorescence detection system based on photonic crystal filter plates |
| CN102628805B (en) * | 2012-04-26 | 2014-10-15 | 大连理工大学 | Microfluidic chip fluorescence detection system based on photonic crystal filter plates |
| CN104916713A (en) * | 2015-05-28 | 2015-09-16 | 东南大学 | Gallium-nitride-based ultraviolet detector with photonic crystals acting as incident window |
| CN105589119A (en) * | 2016-02-29 | 2016-05-18 | 中国科学院半导体研究所 | Terahertz photoconductive antenna epitaxial structure provided with DBR layer and production method |
| CN111289104A (en) * | 2020-03-03 | 2020-06-16 | 中国科学院物理研究所 | Terahertz energy detector, detection system and application |
| CN111289104B (en) * | 2020-03-03 | 2021-12-03 | 中国科学院物理研究所 | Terahertz energy detector, detection system and application |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120104 Termination date: 20190512 |