CN105826423A - Wide-band infrared detector - Google Patents
Wide-band infrared detector Download PDFInfo
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- CN105826423A CN105826423A CN201610335779.1A CN201610335779A CN105826423A CN 105826423 A CN105826423 A CN 105826423A CN 201610335779 A CN201610335779 A CN 201610335779A CN 105826423 A CN105826423 A CN 105826423A
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- inp
- infrared detectors
- infrared detector
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- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract 2
- 230000005693 optoelectronics Effects 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
Abstract
The invention provides a wide-band infrared detector, and relates to the application field of optoelectronic materials and devices. The problem that the existing InGaAs infrared detector has a narrow detection range, and coverage of the detection range from 1.0 microns to 2.6 microns requires a three-band detector is solved. According to the invention, an n-type InP substrate is adopted, an absorption layer (namely, an i layer) is made of In<0.82>Ga<0.18>As, a cover layer is made of p-type InP, and thus, a p-i-n structure is formed. Thus, the range from 1.0 microns to 2.6 microns can be detected using one InGaAs detector. The wide-band infrared detector of the invention can be widely used in the field of optoelectronic materials and devices.
Description
Technical field
The present invention relates to photoelectron material and devices field, in particular to a kind of broadband Infrared Detectors.
Background technology
At present in InGaAs infrared detector structure designs, particularly in semiconductor photovoltaic type Infrared Detectors, all use p-i-n structure, cap rock is p-type InAsP respectively, absorbed layer i.e. i layer is the InGaAs of different component, and n-layer is InP substrate, when wavelength is in 1.7 μm-2.6 μm, the InGaAs of the most p-type layer and different component that use different component InAsP to make device makees absorbed layer, and the InGaAs detector of three wave bands must be had to carry out work in order to cover this 1.0 μm-2.6 μm investigative range.
Summary of the invention
The present invention solves that the investigative range of existing InGaAs Infrared Detectors is narrow, cover the problem that 1.0 μm-2.6 μm investigative ranges must carry out work with the InGaAs detector of three wave bands, it is provided that the InGaAs Infrared Detectors of a kind of wide detecting band.
The InGaAs Infrared Detectors of wide detecting band, its structure is: grows the In0.82Ga0.18As of the 3 involuntary doping of μm in N-shaped InP substrate successively and mixes the InP epitaxial layer of Zn as i layer, InP cushion, 1 μm, forms pin panel detector structure.
The principle of the invention: the present invention is the investigative range of extension InGaAs Infrared Detectors, it is provided that a kind of new panel detector structure, enables an InGaAs detector to detect from 1.0 μm-2.6 μ m.Use N-shaped InP substrate, In0.82Ga0.18As is as absorbed layer, N-shaped InP is as cap rock, In0.82Ga0.18As in InP substrate one layer of involuntary doping of growth, as i layer, then utilize two-step method at the InP of growth one layer doping Zn, constitute pin structure, so use an InGaAs detector just can detect 1.0 μm-2.6 μ m.
Beneficial effects of the present invention: broadband Infrared Detectors of the present invention, detects 1.0 μm-2.6 μ m and has only to a detector and can realize, present invention achieves broadband investigative range.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme of the embodiment of the present invention, the accompanying drawing used required in embodiment will be briefly described below, it is to be understood that, the following drawings illustrate only certain embodiments of the present invention, therefore the restriction to scope it is not construed as, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtain other relevant accompanying drawings according to these accompanying drawings.
Fig. 1 is the structural representation of the carbon-dioxide gasfertilizer culture bottle of the present invention.
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is a part of embodiment of the present invention rather than whole embodiments.Generally can with various different configurations arrange and design with the assembly of the embodiment of the present invention that illustrate described in accompanying drawing herein.Therefore, the detailed description to the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of claimed invention below, but is merely representative of the selected embodiment of the present invention.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of protection of the invention.
In describing the invention, it will be appreciated that, term " on " orientation that indicates or position relationship be for based on orientation shown in the drawings or position relationship, it is for only for ease of the description present invention, rather than instruction or hint indication equipment or element must have specific orientation, with specific azimuth configuration and operation, be therefore not considered as limiting the invention.
Embodiment
Refer to Fig. 1, embodiments provide a kind of broadband Infrared Detectors, its structure is: grow successively in N-shaped InP substrate 300 In0.82Ga0.18As200 of the 3 involuntary doping of μm as i layer, continued growth InP cushion, grow 1 μm and mix the InP epitaxial layer 100 of Zn, form pin panel detector structure.
Present embodiment is as follows: first mixing the N-shaped InP substrate 300 of S, use MOCVD system in InP substrate 550 DEG C growth one layer of 3 microns of involuntary doping In0.82Ga0.18As200 as i layer, then temperature is reduced, temperature is reduced to the InP of one layer of about 80 nanometer of growth when 430 DEG C, then high-temperature is risen to 580 DEG C, cushion InP annealing recrystallization in temperature-rise period, the stress that release is caused by lattice mismatch, become the interface of next step growth, 580 DEG C of constant temperature 3-5 minute, then proceed to grow 1 μm and mix the InP epitaxial layer 100 of Zn, form pin panel detector structure.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. made, should be included within the scope of the present invention.
Claims (5)
1. a broadband Infrared Detectors, including N-shaped InP substrate, it is characterized in that, N-shaped InP substrate grows the In0.82Ga0.18As of the 3 involuntary doping of μm successively and mixes the InP epitaxial layer of Zn as i layer, InP cushion, 1 μm, form pin panel detector structure.
Infrared Detectors the most according to claim 1, it is characterised in that the growth temperature of described ground floor is 520 DEG C～550 DEG C.
Infrared Detectors the most according to claim 2, it is characterised in that the growth temperature of described ground floor is 550 DEG C.
Infrared Detectors the most according to claim 1, it is characterised in that the temperature growing described InP cushion is 420 DEG C～450 DEG C.
Infrared Detectors the most according to claim 4, it is characterised in that the temperature growing described InP cushion is 430 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610335779.1A CN105826423A (en) | 2016-05-20 | 2016-05-20 | Wide-band infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610335779.1A CN105826423A (en) | 2016-05-20 | 2016-05-20 | Wide-band infrared detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105826423A true CN105826423A (en) | 2016-08-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610335779.1A Pending CN105826423A (en) | 2016-05-20 | 2016-05-20 | Wide-band infrared detector |
Country Status (1)
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112701188A (en) * | 2020-12-29 | 2021-04-23 | 杭州电子科技大学 | Near-infrared photoelectric detector and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020134939A1 (en) * | 2001-03-19 | 2002-09-26 | Giedd Ryan E. | Doped, organic carbon-containing sensor for infrared detection and a process for the preparation thereof |
| CN102130200A (en) * | 2010-12-24 | 2011-07-20 | 中国科学院长春光学精密机械与物理研究所 | Indium gallium arsenide (InGaAs) infrared detector for wide detection wave bands |
| CN103367520A (en) * | 2013-06-27 | 2013-10-23 | 中国科学院上海微系统与信息技术研究所 | InP-base lattice matching InGaAsBi detector structure with cutoff wavelength capable of being adjusted in wide range and preparation method thereof |
| CN103383977A (en) * | 2013-07-23 | 2013-11-06 | 中国科学院长春光学精密机械与物理研究所 | InGaAs (Indium Gallium Arsenide) or GaAs (Gallium Arsenide) infrared detector with wide detection bands |
-
2016
- 2016-05-20 CN CN201610335779.1A patent/CN105826423A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020134939A1 (en) * | 2001-03-19 | 2002-09-26 | Giedd Ryan E. | Doped, organic carbon-containing sensor for infrared detection and a process for the preparation thereof |
| CN102130200A (en) * | 2010-12-24 | 2011-07-20 | 中国科学院长春光学精密机械与物理研究所 | Indium gallium arsenide (InGaAs) infrared detector for wide detection wave bands |
| CN103367520A (en) * | 2013-06-27 | 2013-10-23 | 中国科学院上海微系统与信息技术研究所 | InP-base lattice matching InGaAsBi detector structure with cutoff wavelength capable of being adjusted in wide range and preparation method thereof |
| CN103383977A (en) * | 2013-07-23 | 2013-11-06 | 中国科学院长春光学精密机械与物理研究所 | InGaAs (Indium Gallium Arsenide) or GaAs (Gallium Arsenide) infrared detector with wide detection bands |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112701188A (en) * | 2020-12-29 | 2021-04-23 | 杭州电子科技大学 | Near-infrared photoelectric detector and preparation method thereof |
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Application publication date: 20160803 |