CN112701188A - Near-infrared photoelectric detector and preparation method thereof - Google Patents
Near-infrared photoelectric detector and preparation method thereof Download PDFInfo
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- CN112701188A CN112701188A CN202011593301.1A CN202011593301A CN112701188A CN 112701188 A CN112701188 A CN 112701188A CN 202011593301 A CN202011593301 A CN 202011593301A CN 112701188 A CN112701188 A CN 112701188A
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000010408 film Substances 0.000 claims abstract description 59
- 229910052946 acanthite Inorganic materials 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 28
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229940056910 silver sulfide Drugs 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 238000001704 evaporation Methods 0.000 claims description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 229910052709 silver Inorganic materials 0.000 claims description 30
- 239000004332 silver Substances 0.000 claims description 30
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 20
- 229910052717 sulfur Inorganic materials 0.000 claims description 20
- 239000011593 sulfur Substances 0.000 claims description 20
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 238000002207 thermal evaporation Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000004073 vulcanization Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 9
- 238000005987 sulfurization reaction Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5866—Treatment with sulfur, selenium or tellurium
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a near infrared photoelectric detector and a preparation method thereof, and the near infrared photoelectric detector comprises a silver sulfide thin-film material, an n-type InP substrate and an electrode; and a silver sulfide film material grows on the n-type InP substrate, and electrodes are evaporated on the n-type InP substrate and the silver sulfide film material. The near-infrared photoelectric detector prepared by the invention does not need epitaxial growth equipment and has the advantage of low cost.
Description
Technical Field
The invention belongs to the field of device preparation, and particularly relates to a near-infrared photoelectric detector taking indium phosphide (InP) and silver sulfide (Ag2S) as photoelectric conversion materials.
Background
A photodetector device is a device that can convert an incident optical signal into an electrical signal. Can detect light radiation with different wavelengths and is used in the fields of imaging, industrial automation control, tracking and control of moving objects and the like.
InP is a III-IV group compound semiconductor material, and has high carrier mobility and good light absorption performance. The forbidden bandwidth of InP and silver sulfide is in near infrared light region, and both have good photoelectric properties, can make near infrared photoelectric detector after combining, and the device simple structure, need not cryogenic cooling system.
Disclosure of Invention
The invention provides a near infrared photoelectric detector and a preparation method thereof, aiming at the defects of the prior art.
A near-infrared photoelectric detector comprises a silver sulfide thin-film material, an n-type InP substrate and electrodes; and a silver sulfide film material grows on the n-type InP substrate, and electrodes are evaporated on the n-type InP substrate and the silver sulfide film material.
A method for preparing a near infrared photoelectric detector specifically comprises the following steps:
step (1), evaporating a metal silver film on the surface of an n-InP substrate by an evaporation method;
depositing a silver film with the thickness of 20-100nm on the surface of a substrate by using p-Si as the substrate through an evaporation method to form an n-InP/Ag film laminated structure;
step (2), vulcanizing the metallic silver film to generate a silver sulfide film, and preparing the silver sulfide film into n-InP/Ag2S, a film laminated structure;
the sulfuration method is carried out in a tube furnace, a vertically arranged quartz tube electric furnace is arranged, a sulfur source is arranged in the middle of the electric furnace, an n-InP/Ag film is arranged vertically above the sulfur source, the Ag film faces the sulfur source, the sulfur source is heated to 250 ℃ under the protection of inert gas argon, the temperature is kept for 24-48 hours, and the n-InP/Ag is obtained2S, a laminated structure;
step (3) evaporating an electrode to obtain an electrode/n-InP/Ag2S/electrode laminated structure;
by thermal evaporation through a template on Ag2Evaporating metal indium or silver electrodes on the surface of the S film; evaporating a metal copper electrode on the surface of the n-InP; the thickness of the metal electrode is 50-300 nm.
Preferably, the evaporation method is an electron beam thermal evaporation metallic silver source, a laser pulse deposition method, a laser beam evaporation metallic silver source or a wire thermal evaporation metallic silver source.
Compared with the prior art, the invention has the following effects: the near-infrared photoelectric detector prepared by the invention does not need epitaxial growth equipment and has the advantage of low cost.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Detailed Description
As shown in fig. 1, a near-infrared photodetector includes a silver sulfide thin-film material 2, an n-type InP substrate 3, and electrodes; a silver sulfide film material grows on the n-type InP substrate, a metal copper electrode 4 is evaporated on the n-type InP substrate 3, and a metal indium or silver electrode 1 is evaporated on the silver sulfide film material.
The first embodiment is as follows: a method for preparing a near infrared photoelectric detector specifically comprises the following steps:
step (1), evaporating a metal silver film on the surface of an n-InP substrate by an evaporation method;
through an evaporation method, a metal silver source is thermally evaporated through an electron beam, a silver film with the thickness of 20nm is deposited on the surface of a substrate by taking p-Si as the substrate, and an n-InP/Ag film laminated structure is formed;
step (2), vulcanizing the metallic silver film to generate a silver sulfide film, and preparing the silver sulfide film into n-InP/Ag2S, a film laminated structure;
the sulfurization method is carried out in a tube furnace, a vertically arranged quartz tube electric furnace is arranged, a sulfur source is arranged in the middle of the electric furnace, an n-InP/Ag film is arranged vertically above the sulfur source, the Ag film faces the sulfur source, the sulfur source is heated to 120 ℃ under the protection of inert gas argon, the temperature is kept for 24 hours, and the n-InP/Ag is obtained2S, a laminated structure;
step (3) evaporating an electrode to obtain an electrode/n-InP/Ag2S/electrode laminated structure;
by thermal evaporation through a template on Ag2S, evaporating metal indium on the surface of the film; evaporating a metal copper electrode on the surface of the n-InP; the thickness of the metal electrode is 50 nm.
Example two: a method for preparing a near infrared photoelectric detector specifically comprises the following steps:
step (1), evaporating a metal silver film on the surface of an n-InP substrate by an evaporation method;
evaporating a metal silver source by a laser beam through an evaporation method, depositing a silver film with the thickness of 100nm on the surface of a substrate by taking p-Si as the substrate, and forming an n-InP/Ag film laminated structure;
step (2), vulcanizing the metallic silver film to generate a silver sulfide film, and preparing the silver sulfide film into n-InP/Ag2S, a film laminated structure;
the sulfurization method is carried out in a tube furnace, a vertically arranged quartz tube electric furnace is arranged, a sulfur source is arranged in the middle of the electric furnace, an n-InP/Ag film is arranged vertically above the sulfur source, the Ag film faces the sulfur source, the sulfur source is heated to 250 ℃ under the protection of inert gas argon, the temperature is kept for 48 hours, and the n-InP/Ag is obtained2S, a laminated structure;
step (3) evaporating an electrode to obtain an electrode/n-InP/Ag2S/electrode laminated structure;
by thermal evaporation through a template on Ag2S, evaporating a silver electrode on the surface of the film; evaporating a metal copper electrode on the surface of the n-InP; the thickness of the metal electrode is 280 nm.
Example three: a method for preparing a near infrared photoelectric detector specifically comprises the following steps:
step (1), evaporating a metal silver film on the surface of an n-InP substrate by an evaporation method;
evaporating a metal silver source by a vapor deposition method, namely, a metal wire thermal vapor deposition method, and depositing a silver film with the thickness of 60nm on the surface of a substrate by taking p-Si as the substrate to form an n-InP/Ag film laminated structure;
step (2), vulcanizing the metallic silver film to generate a silver sulfide film, and preparing the silver sulfide film into n-InP/Ag2S, a film laminated structure;
the vulcanization process is carried out in a tube furnace with vertically disposed quartzA tube-type electric furnace, a sulfur source is arranged in the middle of the electric furnace, an n-InP/Ag film is arranged vertically above the sulfur source, the Ag film faces the sulfur source, the sulfur source is heated to 200 ℃ under the protection of inert gas argon, the temperature is kept for 30 hours, and the n-InP/Ag is obtained2S, a laminated structure;
step (3) evaporating an electrode to obtain an electrode/n-InP/Ag2S/electrode laminated structure;
by thermal evaporation through a template on Ag2S, evaporating a silver electrode on the surface of the film; evaporating a metal copper electrode on the surface of the n-InP; the thickness of the metal electrode is 180 nm.
Claims (5)
1. A near infrared photodetector characterized by: comprises a silver sulfide thin film material, an n-type InP substrate and an electrode; and a silver sulfide film material grows on the n-type InP substrate, and electrodes are evaporated on the n-type InP substrate and the silver sulfide film material.
2. The near-infrared photodetector of claim 1, wherein: the evaporated electrode on the n-type InP substrate is a metal copper electrode.
3. The near-infrared photodetector of claim 1, wherein: the electrode evaporated on the silver sulfide film material is a metal indium or silver electrode.
4. The method for manufacturing a near-infrared photodetector as claimed in claim 1, wherein the method comprises the following steps:
step (1), evaporating a metal silver film on the surface of an n-InP substrate by an evaporation method;
depositing a silver film with the thickness of 20-100nm on the surface of a substrate by using p-Si as the substrate through an evaporation method to form an n-InP/Ag film laminated structure;
step (2), vulcanizing the metallic silver film to generate a silver sulfide film, and preparing the silver sulfide film into n-InP/Ag2S, a film laminated structure;
the vulcanization process is carried out in a tube furnace, a quartz tube electric furnace placed vertically, in the middle of the electric furnacePlacing a sulfur source, placing an n-InP/Ag film vertically above the sulfur source, facing the Ag film to the sulfur source, heating the sulfur source to 120-fold under the protection of inert gas argon, and preserving heat for 24-48 hours to obtain n-InP/Ag2S, a laminated structure;
step (3) evaporating an electrode to obtain an electrode/n-InP/Ag2S/electrode laminated structure;
by thermal evaporation through a template on Ag2Evaporating metal indium or silver electrodes on the surface of the S film; evaporating a metal copper electrode on the surface of the n-InP; the thickness of the metal electrode is 50-300 nm.
5. The method for manufacturing a near-infrared photodetector as claimed in claim 4, wherein: the evaporation method is that the metal silver source is evaporated by electron beam heat, the metal silver source is evaporated by laser beam through laser pulse deposition method or the metal silver source is evaporated by metal wire heat evaporation method.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011593301.1A CN112701188A (en) | 2020-12-29 | 2020-12-29 | Near-infrared photoelectric detector and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114284385A (en) * | 2021-12-27 | 2022-04-05 | 杭州电子科技大学 | Preparation method of cuprous sulfide-silver sulfide pn junction photoelectric detector |
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| CN101786650A (en) * | 2010-02-08 | 2010-07-28 | 许昌学院 | Chemical method for in situ synthesis of platy silver sulphide nano crystal photoelectric film at low temperature |
| US20160087118A1 (en) * | 2014-09-19 | 2016-03-24 | Kabushiki Kaisha Toshiba | Photoelectric conversion device, and solar cell |
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| CN111341861A (en) * | 2020-02-17 | 2020-06-26 | 昆明物理研究所 | Photovoltaic infrared detector based on p-GeTe/n-Si and preparation method thereof |
-
2020
- 2020-12-29 CN CN202011593301.1A patent/CN112701188A/en active Pending
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| US20070257256A1 (en) * | 2006-05-03 | 2007-11-08 | Seiko Epson Corporation | Photosensing thin film transistor |
| CN101786650A (en) * | 2010-02-08 | 2010-07-28 | 许昌学院 | Chemical method for in situ synthesis of platy silver sulphide nano crystal photoelectric film at low temperature |
| US20160087118A1 (en) * | 2014-09-19 | 2016-03-24 | Kabushiki Kaisha Toshiba | Photoelectric conversion device, and solar cell |
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| Title |
|---|
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| 张卜生著: "铜族化合物薄膜的低温原位合成及光伏性能研究", 《中国优秀硕士学位论文全文数据库》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114284385A (en) * | 2021-12-27 | 2022-04-05 | 杭州电子科技大学 | Preparation method of cuprous sulfide-silver sulfide pn junction photoelectric detector |
| CN114284385B (en) * | 2021-12-27 | 2024-01-30 | 杭州电子科技大学 | Preparation method of cuprous sulfide-silver sulfide pn junction photoelectric detector |
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