CN103367520A - InP-base lattice matching InGaAsBi detector structure with cutoff wavelength capable of being adjusted in wide range and preparation method thereof - Google Patents
InP-base lattice matching InGaAsBi detector structure with cutoff wavelength capable of being adjusted in wide range and preparation method thereof Download PDFInfo
- Publication number
- CN103367520A CN103367520A CN2013102644206A CN201310264420A CN103367520A CN 103367520 A CN103367520 A CN 103367520A CN 2013102644206 A CN2013102644206 A CN 2013102644206A CN 201310264420 A CN201310264420 A CN 201310264420A CN 103367520 A CN103367520 A CN 103367520A
- Authority
- CN
- China
- Prior art keywords
- inp
- ingaasbi
- detector structure
- lattice matching
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Light Receiving Elements (AREA)
Abstract
The invention relates to an InP-base lattice matching InGaAsBi detector structure with cutoff wavelength capable of being adjusted in a wide range and a preparation method thereof. From the bottom to the top, the detector structure sequentially comprises an InP substrate, a highly-doped n-type InP buffer layer, an absorbing layer and a highly-doped p-type InP cap layer. The absorbing layer is a lightly-doped n-type In<y>Ga<1-y>As<1-x>Bi<x> absorbing layer, wherein x is more than zero and less than or equal to 0.34 and y is more than or equal to zero and less than 0.53. The preparation method comprises the steps of 1) growing a highly-doped InP buffer layer on an InP substrate; 2) growing a lightly-doped n-type In<y>Ga<1-y>As<1-x>Bi<x> absorbing layer; 3) growing a cap layer; and 4) preparing an infrared detector structure. The detector provided by the invention can be matched with lattices of the InP substrate, the cutoff wavelength lambda can be adjusted within the wide range that lambda is more than 1.7mum and less than or equal to 5.9mum, the growth can be realized by using a conventional method and the preparation method is simple.
Description
Technical field
The invention belongs to infrared detector structure and preparation field thereof, particularly a kind of InP base cut-off wavelength adjustable Lattice Matching InGaAsBi panel detector structure and preparation thereof on a large scale.
Background technology
Infrared Detectors has broad application prospects in information communication, space to ground detection, satellite remote sensing, multispectral imaging analysis, night vision imaging, military surveillance and numerous civilian and militaries such as supervision, infrared early warning field.Study for the ease of the infrared light to different wave length, people are divided into infrared spectrum following zone usually: near-infrared (0.7-2.0 μ m), in infrared (2.0-30 μ m) and far infrared (wavelength is at 30-1000 μ m).Simultaneously, according to several common atmospheric windows, infrared band habitually is divided into again short-wave infrared (1-3 μ m), medium-wave infrared (3-5 μ m), LONG WAVE INFRARED (8-14 μ m) and myriametric wave infrared (〉 14 μ m) etc.It is multiple that semiconductor detector comprises photoconduction type detector, photovoltaic detector, quantum well detector, quantum dot detector etc. by operation principle.Utilize the photovoltaic detector of PN junction photovoltaic effect to have simple in structure, quantum efficiency advantages of higher.
In with InP substrate lattice coupling
0.53Ga
0.47As ternary system material has the characteristics of direct band gap and high electron mobility, the about 0.74eV of the energy gap under its room temperature, and about 1.7 microns of corresponding wavelength can cover 1310nm and the 1550nm of longwave optical fiber communication just, so adopts In
0.53Ga
0.47The photodetector that As ternary system material is made has obtained generally to use at optical communication field, and at aspects such as remote sensing, sensing and imagings important use is arranged also.For In
xGa
1-xAs ternary system material, change the ratio that the component value x(of group iii elements In wherein namely changes two kinds of element In of III family and Ga) its energy gap is changed between 0.36～1.43eV continuously, x particularly〉0.53 material, its corresponding wavelength can expand to〉1.7 microns wave band, for example: when the x value was increased to 0.8, the response wave length of material can expand to about 2.5 microns.The In of wavelength spread
xGa
1-xThe As detector has widely purposes in fields such as remote sensing.But, along with the increase of In component value x, In
xGa
1-xThe lattice constant of As ternary system material can corresponding increase, as x〉after 0.53, In
xGa
1-xCan produce the positive mismatch of corresponding lattice between As ternary system material and its most frequently used InP substrate, be more greatly generation and the extension that will cause misfit dislocation and work as mismatch, thereby affect the quality of epitaxial material.
Summary of the invention
Technical problem to be solved by this invention provides adjustable Lattice Matching InGaAsBi panel detector structure and the preparation thereof on a large scale of a kind of InP base cut-off wavelength, the cut-off wavelength wide region of this infrared detector structure can be regulated, while is with InP substrate lattice coupling or have less lattice mismatch, preparation technology is simple, and is easy to control.
A kind of InP base cut-off wavelength of the present invention is adjustable Lattice Matching InGaAsBi panel detector structure on a large scale, this panel detector structure from bottom to top comprises successively: InP substrate, highly doped N-shaped InP resilient coating, absorbed layer and highly doped p-type InP cap layer, described absorbed layer is low-doped N-shaped In
yGa
1-yAs
1-xBi
xAbsorbed layer, wherein 0＜x≤0.34,0≤y＜0.53.
Described In
yGa
1-yAs
1-xBi
xAbsorbed layer and InP substrate lattice coupling.
Described detector cut-off wavelength λ is adjustable on a large scale, and adjustable range is 1.7 μ m＜λ≤5.9 μ m.
Described absorbed layer is In
0.34Ga
0.66As
0.88Bi
0.12Material.
A kind of InP base cut-off wavelength of the present invention is the preparation method of adjustable Lattice Matching InGaAsBi infrared detector structure on a large scale, comprising:
(1) on the InP substrate, grows first the highly doped N-shaped InP of one deck material as resilient coating, simultaneously as lower contact layer;
(2) the low-doped N-shaped In of growth
yGa
1-yAs
1-xBi
xMaterial is as the absorbed layer of detector, wherein 0＜x≤0.34,0≤y＜0.53;
(3) the highly doped p-type InP material of growth simultaneously as upper contact layer, is finished the growth of material for detector as the cap layer;
(4) above-mentioned material for detector is prepared into infrared detector structure, gets final product.
X=0.12 described in the step (2), y=0.34, the cut-off wavelength of resulting InP base InGaAsBi infrared detector structure is 3 microns.
Can be by regulating In among the present invention
yGa
1-yAs
1-xBi
xThe component of In and Bi in (0＜x≤0.34,0≤y＜0.53) absorbed layer is mated the cut-off wavelength λ that regulates detector under the prerequisite on a large scale at detector and InP substrate lattice, and adjustable range is 1.7 μ m＜λ≤5.9 μ m; Described In
yGa
1-yAs
1-xBi
x(0＜x≤0.34,0≤y＜0.53) absorbed layer and InP substrate lattice coupling.
Beneficial effect:
(1) InP of the present invention base InGaAsBi infrared detector structure cut-off wavelength adjustable while of wide region and InP substrate lattice coupling are by regulating the cut-off wavelength that the component of In and Bi can be regulated detector in the InGaAsBi absorbed layer;
(2) this panel detector structure can be grown with methods such as conventional molecular beam epitaxy, metal organic chemical vapor depositions, and operating procedure is simple, and is easy to control.
Description of drawings
Fig. 1 is the basic cut-off wavelength of the InP of this invention schematic diagram of adjustable Lattice Matching InGaAsBi panel detector structure on a large scale;
Fig. 2 is the InGaAsBi absorbed layer energy gap of calculating and the relation of Bi component x and In component y;
Fig. 3 be among the embodiment 13 microns of a kind of cut-off wavelengths and with the InGaAsBi infrared detector structure schematic diagram of InP substrate lattice coupling.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used for explanation the present invention and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Below on the InP substrate InGaAaBi detector and preparation method thereof of 3 microns of cut-off wavelengths this kind InP base cut-off wavelength adjustable Lattice Matching panel detector structure and preparation method thereof on a large scale is described as example:
(1) will be at the Lattice Matching InGaAaBi detector of 3 microns of InP substrate preparation cut-off wavelengths, the corresponding energy gap of absorbed layer should be 0.41eV, only draw the contour of every interval 0.1eV owing to spatial relationship among Fig. 2, but in fact can obtain more high-precision energy gap value.Can get In by Fig. 2
0.34Ga
0.66As
0.88Bi
0.12Material can be 0.41eV with InP Lattice Matching and energy gap.
(2) the 1 μ m doping content of growing first on the InP substrate is 2 * 10
18Cm
-3N-shaped InP resilient coating, simultaneously as lower contact layer;
(3) growth 2 μ m doping contents are 3 * 10
6Cm
-3N-shaped In
0.34Ga
0.66As
0.88Bi
0.12Absorbed layer, its room temperature energy gap is 0.41eV, the respective devices cut-off wavelength is 3 microns;
(4) growth 0.5 μ m doping content is 2 * 10
18Cm
-3P-type InP cap layer, simultaneously as upper contact layer, finish the growth of material for detector;
(5) material of growing is prepared the table top panel detector structure by conventional semiconductor technology.
Claims (6)
1. InP base cut-off wavelength adjustable Lattice Matching InGaAsBi panel detector structure on a large scale, this infrared detector structure from bottom to top comprises successively: InP substrate, highly doped N-shaped InP resilient coating, absorbed layer and highly doped p-type InP cap layer, it is characterized in that described absorbed layer is low-doped N-shaped In
yGa
1-yAs
1-xBi
xAbsorbed layer, wherein 0＜x≤0.34,0≤y＜0.53.
2. a kind of InP base cut-off wavelength according to claim 1 adjustable Lattice Matching InGaAsBi panel detector structure on a large scale is characterized in that described In
yGa
1-yAs
1-xBi
xAbsorbed layer and InP substrate lattice coupling.
3. a kind of InP base cut-off wavelength according to claim 1 adjustable Lattice Matching InGaAsBi panel detector structure on a large scale is characterized in that described detector cut-off wavelength λ is adjustable on a large scale, and adjustable range is 1.7 μ m＜λ≤5.9 μ m.
4. a kind of InP base cut-off wavelength according to claim 1 adjustable Lattice Matching InGaAsBi panel detector structure on a large scale is characterized in that described absorbed layer is In
0.34Ga
0.66As
0.88Bi
0.12Material.
5. the InP base cut-off wavelength preparation method of adjustable Lattice Matching InGaAsBi panel detector structure on a large scale comprises:
(1) the highly doped N-shaped InP of one deck resilient coating of growing first on the InP substrate is simultaneously as lower contact layer;
(2) the low-doped N-shaped In of growth
yGa
1-yAs
1-xBi
xMaterial is as the absorbed layer of detector; 0＜x≤0.34,0≤y＜0.53 wherein;
(3) the highly doped p-type InP of growth simultaneously as upper contact layer, finishes the growth of material for detector as the cap layer;
(4) above-mentioned material for detector is prepared into infrared detector structure, gets final product.
6. a kind of InP base cut-off wavelength according to claim 5 preparation method of adjustable Lattice Matching InGaAsBi panel detector structure on a large scale, it is characterized in that, x=0.12 described in the step (2), y=0.34, the cut-off wavelength of resulting InP base InGaAsBi infrared detector structure is 3 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102644206A CN103367520A (en) | 2013-06-27 | 2013-06-27 | InP-base lattice matching InGaAsBi detector structure with cutoff wavelength capable of being adjusted in wide range and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102644206A CN103367520A (en) | 2013-06-27 | 2013-06-27 | InP-base lattice matching InGaAsBi detector structure with cutoff wavelength capable of being adjusted in wide range and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103367520A true CN103367520A (en) | 2013-10-23 |
Family
ID=49368467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013102644206A Pending CN103367520A (en) | 2013-06-27 | 2013-06-27 | InP-base lattice matching InGaAsBi detector structure with cutoff wavelength capable of being adjusted in wide range and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103367520A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794693A (en) * | 2014-02-14 | 2014-05-14 | 中国科学院上海微系统与信息技术研究所 | Light emitting diode and OCT imaging system |
| CN105609582A (en) * | 2015-12-01 | 2016-05-25 | 中国科学院上海微系统与信息技术研究所 | Inter-band and inter-sub-valence band absorption-based rare bismuth quantum well detector and preparation method thereof |
| CN105826423A (en) * | 2016-05-20 | 2016-08-03 | 中山市厚源电子科技有限公司 | Wide-band infrared detector |
| CN106784119A (en) * | 2016-11-29 | 2017-05-31 | 苏州苏纳光电有限公司 | Detector of compound optoelectronic containing Bi and preparation method thereof |
| CN109786510A (en) * | 2019-03-11 | 2019-05-21 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of four-element detector system and thus obtained indium gallium arsenic bismuth four-element detector system |
| CN110896120A (en) * | 2019-11-11 | 2020-03-20 | 中国科学院上海技术物理研究所 | Multilayer InGaAs detector material structure and preparation method |
| CN110896114A (en) * | 2019-11-11 | 2020-03-20 | 中国科学院上海技术物理研究所 | PIIN type high In component InGaAs detector material structure and preparation method |
| CN111418120A (en) * | 2017-12-04 | 2020-07-14 | 三菱电机株式会社 | Electric field absorption modulator, optical semiconductor device, and optical module |
| CN114914313A (en) * | 2022-06-30 | 2022-08-16 | 山东云海国创云计算装备产业创新中心有限公司 | Infrared photoelectric detector for photonic chip and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100541831C (en) * | 2007-12-28 | 2009-09-16 | 中国科学院上海技术物理研究所 | Back irradiation arsenic indium table alignment or planar array detector chip and preparation technology |
-
2013
- 2013-06-27 CN CN2013102644206A patent/CN103367520A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100541831C (en) * | 2007-12-28 | 2009-09-16 | 中国科学院上海技术物理研究所 | Back irradiation arsenic indium table alignment or planar array detector chip and preparation technology |
Non-Patent Citations (2)
| Title |
|---|
| AUDRIUS ARLAUSKAS ET AL: "GaAsBi photoconductive Terahertz Detector Sensitivity at Long Excitation Wavelengths", 《THE JAPAN SOCIETY OF APPLIED PHYSICS》 * |
| GAN FENG ET AL.: "New III-V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy", 《JAPANESE JOURNAL OF APPLIED PHYSICS》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794693A (en) * | 2014-02-14 | 2014-05-14 | 中国科学院上海微系统与信息技术研究所 | Light emitting diode and OCT imaging system |
| CN103794693B (en) * | 2014-02-14 | 2016-05-18 | 中国科学院上海微系统与信息技术研究所 | A kind of light emitting diode and optical coherence tomography system |
| CN105609582A (en) * | 2015-12-01 | 2016-05-25 | 中国科学院上海微系统与信息技术研究所 | Inter-band and inter-sub-valence band absorption-based rare bismuth quantum well detector and preparation method thereof |
| CN105826423A (en) * | 2016-05-20 | 2016-08-03 | 中山市厚源电子科技有限公司 | Wide-band infrared detector |
| CN106784119A (en) * | 2016-11-29 | 2017-05-31 | 苏州苏纳光电有限公司 | Detector of compound optoelectronic containing Bi and preparation method thereof |
| CN106784119B (en) * | 2016-11-29 | 2018-04-03 | 苏州苏纳光电有限公司 | Detector of compound optoelectronic containing Bi and preparation method thereof |
| CN111418120A (en) * | 2017-12-04 | 2020-07-14 | 三菱电机株式会社 | Electric field absorption modulator, optical semiconductor device, and optical module |
| CN109786510A (en) * | 2019-03-11 | 2019-05-21 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of four-element detector system and thus obtained indium gallium arsenic bismuth four-element detector system |
| CN110896120A (en) * | 2019-11-11 | 2020-03-20 | 中国科学院上海技术物理研究所 | Multilayer InGaAs detector material structure and preparation method |
| CN110896114A (en) * | 2019-11-11 | 2020-03-20 | 中国科学院上海技术物理研究所 | PIIN type high In component InGaAs detector material structure and preparation method |
| CN110896114B (en) * | 2019-11-11 | 2021-10-01 | 中国科学院上海技术物理研究所 | PIIN type high In component InGaAs detector material structure and preparation method |
| CN114914313A (en) * | 2022-06-30 | 2022-08-16 | 山东云海国创云计算装备产业创新中心有限公司 | Infrared photoelectric detector for photonic chip and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103367520A (en) | InP-base lattice matching InGaAsBi detector structure with cutoff wavelength capable of being adjusted in wide range and preparation method thereof | |
| Liu et al. | ZnO-based ultraviolet photodetectors | |
| LaPierre et al. | A review of III–V nanowire infrared photodetectors and sensors | |
| Li et al. | The development of InGaAs short wavelength infrared focal plane arrays with high performance | |
| CN102176489A (en) | Method for improving photoelectric detector performance by cutting band gap wavelength in lattice matching system | |
| CN111584674B (en) | Single-chip integrated solar blind ultraviolet and near-infrared double-color photoelectric detector and manufacturing method thereof | |
| CN104300013A (en) | GeSn infrared detector with strain source | |
| Zhang et al. | Short-wave infrared InGaAs photodetectors and focal plane arrays | |
| Zhou et al. | Dark current characteristics of GaAs-based 2.6 µm InGaAs photodetectors on different types of InAlAs buffer layers | |
| Xue et al. | Developments of short-wave infrared InGaAs focal plane detectors | |
| Miao et al. | Review of Ge (GeSn) and InGaAs avalanche diodes operating in the SWIR spectral region | |
| CN104538484B (en) | Epitaxial structure of wavelength expansion type InGaAs avalanche photodiode | |
| CN100492670C (en) | Wave scalable InGaAs detector and array broadband buffering layer and window layer and its making method | |
| Xu et al. | High performance InAs/GaAsSb superlattice long wavelength infrared photo-detectors grown on InAs substrates | |
| CN105514209A (en) | Infrared night-vision goggle based on GeSn infrared detector | |
| Liu et al. | Design and Fabrication of High Performance InGaAs near Infrared Photodetector | |
| CN103337556A (en) | Method for cutting band gap wavelength and improving photodetector performance in lattice matching system | |
| Gomółka et al. | Electrical and optical performance of midwave infrared InAsSb heterostructure detectors | |
| CN101621066A (en) | GaN-based solar-blind UV detector area array and manufacturing method thereof | |
| CN103077979A (en) | Wavelength expansion InGaAs detector structure on GaAs substrate | |
| Fastenau et al. | GaSb-based infrared photodetector structures grown on Ge-Si substrates via metamorphic buffers | |
| Zhang et al. | Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures | |
| Huang et al. | Deep levels analysis in wavelength extended InGaAsBi photodetector | |
| CN101976696B (en) | Material system for expanding In0.53Ga0.47As detector and array shortwave response thereof and preparation thereof | |
| Jung et al. | Growth and characterization of InGaAs/GaAsSb type II superlattice absorbers for 2 µm avalanche photodiodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20131023 |
|
| RJ01 | Rejection of invention patent application after publication |