CN103077979A - Wavelength expansion InGaAs detector structure on GaAs substrate - Google Patents
Wavelength expansion InGaAs detector structure on GaAs substrate Download PDFInfo
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- CN103077979A CN103077979A CN2013100053803A CN201310005380A CN103077979A CN 103077979 A CN103077979 A CN 103077979A CN 2013100053803 A CN2013100053803 A CN 2013100053803A CN 201310005380 A CN201310005380 A CN 201310005380A CN 103077979 A CN103077979 A CN 103077979A
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- gaas substrate
- ingaas
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Abstract
The invention relates to a wavelength expansion InGaAs detector structure on a GaAs substrate. The cut-off wavelength of the detector prepared by using the structure is greater than 1.7 micrometers but smaller than 3.5 micrometers, aluminum-containing arsenide materials are arranged on the GaAs substrate in an epitaxy way to be used as a buffer layer and a lower contact layer, InGaAs is used as an absorption layer, and in addition, aluminum-containing arsenide materials are adopted to be used as a window layer and an upper contact layer. The detector structure provided by the invention can expand the application range of the InGaAs detector and the array of the InGaAs detector, the GaAs substrate with maturer process and higher quality is adopted, the device cost can be reduced, the influence on the epitaxial layer hidden current caused by the substrate defects is reduced, the quantum efficiency is improved, and wide application prospects are realized.
Description
Technical field
The invention belongs to Semiconductor Optoeletronic Materials and devices field, particularly expansion wavelength InGaAs detector on a kind of GaAs substrate.
Background technology
Ternary system In
xGa
1-xThe As material is full constituent direct band gap material, by regulating In component x, can cover 0.8 ~ 3.5 mu m waveband.Because the advantages such as that the detector made of InGaAs material has is highly sensitive, fast response time, radiation-resisting performance are good, working and room temperature make it become the ideal material of short infrared wave band space remote sensing.For space remote sensing with detector, research focus on suppressing noise, reduce the dark current of device, improve detectivity.At present, InP base InGaAs Infrared Detectors is surveyed cut-off wavelength, and oneself extends to 2.9 μ m, and device also develops into infrared focal plane array by unit component, but dark current still is greatly the major issue of its application of restriction.For the InGaAs with the substrate lattice mismatch expanded wavelength detector, defect concentration was one of principal element that affects device dark electric current and quantum efficiency.Therefore, if wish to obtain the higher material of quality, then need to search out on the one hand suitable growing high-quality high In ingredient In
xGa
1-xThe substrate of As material, the resilient coating of certain structure of then need to growing between substrate and epitaxial loayer on the other hand is to reduce the defect concentration in the absorption of InGaAs layer.
Compare with the InP substrate, the GaAs substrate is more cheap, can greatly reduce the preparation cost of device; And the GaAs substrate quality is better than the InP substrate usually, and its mechanical strength is higher, guarantees easily device lower spoilage in the subsequent technique process; Even more important a bit is, the GaAs substrate is for the InP substrate, and its ripe preparation technology has guaranteed that substrate more has higher uniformity in the large scale scope, and defect concentration greatly reduces, and this has just reduced in growth course substrate to epitaxial loayer (In
xGa
1-xAs) impact of quality; Simultaneously, GaAs(1.42eV under the room temperature) energy gap is than InP(1.35eV) wide, it is shorter to be expected the wavelength surveyed when adopting irradiation backlight, and the trouble of having removed the corrosion substrate from.
With respect to the InP substrate, GaAs substrate and In
xGa
1-xLattice mismatch between the As is larger, so when GaAs Grown resilient coating, In
xAl
1-xThe As critical thickness is less, that is to say in epitaxial process In
xAl
1-xStrain relief in the As epitaxial loayer is very fast, can obtain very high relaxivity in less thickness range, is expected to improve the In of growth thereon
xGa
1-xAs absorbed layer quality of materials, the light absorption layer material of acquisition fabricating low-defect-density.
Summary of the invention
Technical problem to be solved by this invention provides expansion wavelength InGaAs panel detector structure on a kind of GaAs substrate, panel detector structure of the present invention can be expanded the range of application of InGaAs detector and array thereof, the GaAs substrate that adopting process is more ripe, quality is higher, can reduce device cost, reduce substrate defects to the impact of epitaxial loayer dark current, improve quantum efficiency, be with a wide range of applications.
On described a kind of GaAs substrate expansion wavelength InGaAs panel detector structure for the preparation of cut-off wavelength greater than 1.7 microns InGaAs detectors less than 3.5 microns.
Expansion wavelength InGaAs panel detector structure is on described a kind of GaAs substrate: extension contains the aluminum arsenide material as resilient coating and lower contact layer on the GaAs substrate, and InGaAs is as absorbed layer, and employing contains the aluminum arsenide material as Window layer and upper contact layer.
Described GaAs substrate is semi-insulating or conduction GaAs substrate.
The In component is greater than 0.53 among the described InGaAs, i.e. In
xGa
1-xAs, 0.53＜x＜1.
Described InAlAs ternary or the InAlGaAs quaternary compound material that the aluminum arsenide material is the In content gradually variational that contain as resilient coating and lower contact layer, or In component InAlAs ternary or the InAlGaAs quaternary compound material identical with absorbed layer.
The described aluminum arsenide material that contains as Window layer and upper contact layer is the In component InAlAs ternary identical with absorbed layer or InAlGaAs quaternary compound material.
Beneficial effect
Expansion wavelength InGaAs panel detector structure adopts the GaAs substrate on the GaAs substrate provided by the invention, can greatly reduce the preparation cost of device; And the GaAs substrate quality is better than the InP substrate usually, and its mechanical strength is higher, guarantees easily device lower spoilage in the subsequent technique process; What is more important, the preparation technology of GaAs substrate maturation have guaranteed that substrate more has higher uniformity in the large scale scope, and defect concentration greatly reduces, and this has just reduced substrate defects to epitaxial loayer (In
xGa
1-xAs) impact of quality; Simultaneously, GaAs(1.42eV under the room temperature) energy gap relatively wide (InP energy gap 1.35eV under the room temperature), it is shorter to be expected the wavelength surveyed when adopting irradiation backlight, can remove the loaded down with trivial details processing steps such as corrosion substrate from; In addition, utilize GaAs and In
xGa
1-xThe characteristics that the As mismatch is larger, the epitaxial loayer relaxation is faster, is expected to obtain in low thickness range the epitaxial loayer of better quality.
Description of drawings
Fig. 1 is the structural representation of expansion wavelength InGaAs panel detector structure on a kind of GaAs substrate provided by the invention;
Fig. 2 is the structural representation of expansion wavelength InGaAs panel detector structure on a kind of GaAs substrate.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used for explanation the present invention and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Embodiment 1
The InGaAs panel detector structure of 2.4 microns of cut-off wavelengths on a kind of GaAs substrate
(1) adopt the Semi-insulating GaAs crystal material in [100] crystal orientation as the substrate of detector, adopt conventional molecular beam epitaxial method at first at the highly doped N-shaped GaAs of the about 200nm of Grown as resilient coating;
(2) then the growth thickness In content that is about 2.5 μ m is 80% highly doped N-shaped In
0.8Al
0.2As resilient coating, electron concentration are 2 * 10
18Cm
-3, this epitaxial loayer is used for discharging strain, can be simultaneously as lower contact layer;
(3) regrowth thickness is that 2 μ m, electron concentration are 3 * 10
16Cm
-3Low-mix N-shaped In
0.8Ga
0.2The As absorbed layer, then continued growth thickness is that 0.48 μ m, hole concentration are 7 * 10
18Cm
-3High doping p-type In
0.8Ga
0.2The upper contact layer of As simultaneously as Window layer, is panel detector structure.
Claims (5)
1. expand wavelength InGaAs panel detector structure on a GaAs substrate, it is characterized in that: extension contains the aluminum arsenide material as resilient coating and lower contact layer on the GaAs substrate, InGaAs is as absorbed layer, and adopt and to contain the aluminum arsenide material as Window layer and upper contact layer, for the preparation of cut-off wavelength greater than 1.7 microns detectors less than 3.5 microns.
2. expand wavelength InGaAs panel detector structure on a kind of GaAs substrate according to claim 1, it is characterized in that: described GaAs substrate is semi-insulating or conduction GaAs substrate.
3. expansion wavelength InGaAs panel detector structure on a kind of GaAs substrate according to claim 1 is characterized in that: among the described InGaAs In component greater than 0.53, i.e. In
xGa
1-xAs, 0.53＜x＜1.
4. expand wavelength InGaAs panel detector structure on a kind of GaAs substrate according to claim 1, it is characterized in that: described InAlAs ternary or the InAlGaAs quaternary compound material that the aluminum arsenide material is the In content gradually variational that contain as resilient coating and lower contact layer, or In component InAlAs ternary or the InAlGaAs quaternary compound material identical with absorbed layer.
5. expand wavelength InGaAs panel detector structure on a kind of GaAs substrate according to claim 1, it is characterized in that: the described aluminum arsenide material that contains as Window layer and upper contact layer is the In component InAlAs ternary identical with absorbed layer or InAlGaAs quaternary compound material.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103368073A (en) * | 2013-06-27 | 2013-10-23 | 中国科学院上海微系统与信息技术研究所 | Quantum well structure capable of realizing emission of light with wavelength close to 1.3 micrometer on GaAs substrate and preparation method of quantum well structure |
| CN103383976A (en) * | 2013-07-23 | 2013-11-06 | 中国科学院长春光学精密机械与物理研究所 | Graphene enhancement type InGaAs infrared detector |
| CN104576785A (en) * | 2014-12-04 | 2015-04-29 | 中国科学院上海微系统与信息技术研究所 | Mutation relaxation buffer layer for InGaAs probe with high In component |
| CN105449017A (en) * | 2015-12-16 | 2016-03-30 | 中国科学院上海微系统与信息技术研究所 | Material structure used for realizing InGaAs light absorption wavelength expansion |
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| US20030161369A1 (en) * | 2002-02-28 | 2003-08-28 | Ying-Lan Chang | Long-wavelength photonic device with GaAsSb quantum-well layer |
| CN101087005A (en) * | 2007-06-08 | 2007-12-12 | 中国科学院上海微系统与信息技术研究所 | Wave scalable InGaAs detector and array broadband buffering layer and window layer and its making method |
| CN102176489A (en) * | 2011-02-22 | 2011-09-07 | 中国科学院上海微系统与信息技术研究所 | Method for improving photoelectric detector performance by cutting band gap wavelength in lattice matching system |
-
2013
- 2013-01-07 CN CN2013100053803A patent/CN103077979A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030161369A1 (en) * | 2002-02-28 | 2003-08-28 | Ying-Lan Chang | Long-wavelength photonic device with GaAsSb quantum-well layer |
| CN101087005A (en) * | 2007-06-08 | 2007-12-12 | 中国科学院上海微系统与信息技术研究所 | Wave scalable InGaAs detector and array broadband buffering layer and window layer and its making method |
| CN102176489A (en) * | 2011-02-22 | 2011-09-07 | 中国科学院上海微系统与信息技术研究所 | Method for improving photoelectric detector performance by cutting band gap wavelength in lattice matching system |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103368073A (en) * | 2013-06-27 | 2013-10-23 | 中国科学院上海微系统与信息技术研究所 | Quantum well structure capable of realizing emission of light with wavelength close to 1.3 micrometer on GaAs substrate and preparation method of quantum well structure |
| CN103383976A (en) * | 2013-07-23 | 2013-11-06 | 中国科学院长春光学精密机械与物理研究所 | Graphene enhancement type InGaAs infrared detector |
| CN103383976B (en) * | 2013-07-23 | 2015-12-09 | 中国科学院长春光学精密机械与物理研究所 | Graphene enhancement type InGaAs Infrared Detectors |
| CN104576785A (en) * | 2014-12-04 | 2015-04-29 | 中国科学院上海微系统与信息技术研究所 | Mutation relaxation buffer layer for InGaAs probe with high In component |
| CN104576785B (en) * | 2014-12-04 | 2016-08-17 | 中国科学院上海微系统与信息技术研究所 | A kind of sudden change relaxed buffer layers for high In ingredient InGaAs detector |
| CN105449017A (en) * | 2015-12-16 | 2016-03-30 | 中国科学院上海微系统与信息技术研究所 | Material structure used for realizing InGaAs light absorption wavelength expansion |
| CN105449017B (en) * | 2015-12-16 | 2017-11-21 | 中国科学院上海微系统与信息技术研究所 | A kind of material structure for being used to realize the extension of InGaAs light absorption wavelengths |
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Application publication date: 20130501 |