CN101087005A - Wave scalable InGaAs detector and array broadband buffering layer and window layer and its making method - Google Patents
Wave scalable InGaAs detector and array broadband buffering layer and window layer and its making method Download PDFInfo
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- CN101087005A CN101087005A CNA2007100417787A CN200710041778A CN101087005A CN 101087005 A CN101087005 A CN 101087005A CN A2007100417787 A CNA2007100417787 A CN A2007100417787A CN 200710041778 A CN200710041778 A CN 200710041778A CN 101087005 A CN101087005 A CN 101087005A
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Abstract
The invention relates to a wide band transparent buffer layer and window layer which is used in wavelength expanding InGaAs photoelectricity detector and array and preparing method, it includes adopts material system which includes transparent grads shadow buffer structure which includes three aluminium or four aluminium which band width is bigger than wavelength expanding InGaAs material and adopts molecule beam extension method and easy to control, and can avoid miamatch and fits for back lighting, and transparent window layer structure which fits for light in front surface and decreases complex of surface and increases efficiency of quanta. The wide band buffer layer and window layer structure in the invention fits for unit or array which adopts back lighting and inversed encapsulated structure, also unit or array which adopts normal front lighting, it possesses perfect currency.
Description
Technical field
The present invention relates to a kind of Wave scalable InGaAs detector and array broadband buffering layer and Window layer and manufacture method, relate to a kind of wavelength spread In that is used for or rather
xGa
1-xBroad stopband transparent caching layer and the window layer structure and the implementation method of As (0.53＜x＜1) photodetector and array thereof the invention belongs to Semiconductor Optoeletronic Materials and devices field.
Background technology
In with InP substrate lattice coupling
0.53Ga
0.47As ternary system material has the characteristics of direct band gap and high electron mobility, the about 0.75eV of the energy gap under its room temperature, and the corresponding about 1.65 μ m of wavelength can cover the optical fiber communication wave band just, therefore adopt In
0.53Ga
0.4The photodetector of 7As ternary system material has obtained widespread usage at optical communication field, and at aspects such as remote sensing, sensing and imagings important use is arranged also.For In
xGa
1-xAs ternary system material, changing wherein, the component value x of the element In of III family (promptly changing the ratio of two kinds of element In of III family and Ga) can make its energy gap change (its energy gap E continuously between 0.36～1.42eV
gWith the pass of In component x be: E
g(eV)=1.42-1.49x-0.43x
2), the material of x＞0.53 particularly, its corresponding wavelength can expand to＞wave band of 1.65 μ m, for example: when the x value is increased to 0.8, the response wave length of material can expand to about 2.5 μ m, when the x value was increased to 1 (promptly carrying out the transition to binary system InAs), the response wave length of material can expand to about 3.5 μ m (response wave length λ (μ m)=1.24/[1.42-1.49x-0.43x
2]).The In of wavelength spread
xGa
1-xThe As detector has purposes widely in fields such as remote sensing.But, along with the increase of In component value x, In
xGa
1-xThe corresponding increase of lattice constant meeting of As ternary system material, behind x＞0.53, In
xGa
1-xCan produce the positive mismatch of corresponding lattice between As ternary system material and its most frequently used InP substrate, and when mismatch is big, will cause generation, propagation and the extension of misfit dislocation, thereby influence the quality of epitaxial material.Be head it off, the people In that is everlasting
xGa
1-xInsert corresponding resilient coating between As ternary system material and the substrate.For example, the grow In of x=0.8
0.8Ga
0.2As ternary system material can be at InP substrate and In
0.8Ga
0.2The In of growth one deck content gradually variational between the As ternary system material
xGa
1-xAs ternary system material, its component value x by 0.53 continuously or step change to 0.8, so just can obviously suppress dislocation, improve the quality of epitaxial loayer.Adopt the detector of sort buffer layer technology to reach preferable performance, but have a serious defective, promptly for the optical wavelength that will survey, this one deck In
xGa
1-xThe As resilient coating is opaque (or absorbing very big), and for array and focus planardetector that light and back-off encapsulation scheme are advanced in the normal employing back side (substrate surface), sort buffer layer structure just is not suitable for like this.Be head it off, people also adopt InA
sXP
1-xBe used as resilient coating Deng broad stopband (light absorbing zone relatively) material, this ternary system material that contains two kinds of V group elements is fit to adopt gas phases such as HVPE, MOCVD to give birth to the technology growth, but it is just not too suitable to gas source molecular beam epitaxy, this be because: for gas source molecular beam epitaxy on the one hand continuously and the beam intensity of frequent variations V group element difficult, be difficult for stable, ratio between two kinds of V group elements also is difficult to accurately control, implements the problem of having in the operation; Beam intensity continuous on the other hand and the frequent variations V group element can make the consumption of V family growth source increase (having increased a large amount of meaningless dischargings in line variation and the control) greatly; The ratio that the Solid State Source molecular beam epitaxy is accurately controlled between two kinds of V group elements continuously also has very highly difficult.
For In
xGa
1-xThe As detector, advancing the light time people in the front often wishes to adopt broad stopband (light absorbing zone relatively) material as the cap layer, promptly constitute so-called transparent window layer, this layer material is transparent for the optical wavelength of being surveyed on the one hand, help to improve quantum efficiency, also help reducing surface recombination on the other hand, improve dark current characteristic.For with the In of InP substrate lattice coupling
0.53Ga
0.47The As detector, people can just adopt InP as Window layer, have so just avoided lattice mismatch issue, and effect is also fine, but for the In of wavelength spread
xGa
1-xThe As detector, just existing with resilient coating similar problem: InP has bigger mismatch as Window layer; InAs
xP
1-xThere is growth question as Window layer; In
xGa
1-xThe opaque function that can not realize window of As.
At wavelength spread In
xGa
1-xThe problem that exists during the resilient coating of As detector and array thereof and Window layer technology realize, the present invention aims to provide a kind of pervasive scheme, can realize broad stopband transparent caching layer and window layer structure, and is suitable for adopting specific molecular beam epitaxial process to realize.
Summary of the invention
The invention provides a kind of wavelength spread In that is used for
xGa
1-xThe broad stopband transparent caching layer of As detector and array thereof and window layer structure and employing molecular beam epitaxial process are realized the method for these structures: the selection by the epitaxial material system makes it have suitable molecular beam epitaxial process realization and the transparent function in broad stopband; Adopt suitable buffer layer structure design to make it between substrate and InGaAs wavelength spread light absorbing zone, reach good buffering effect; Utilize the loose material component of growth conditions to realize broad stopband transparent window layer structure on this basis; Provide the molecular beam epitaxial process implementation method and the key point thereof of these structures; Below introduce respectively:
One, the selection of resilient coating and Window layer material system
In with InP substrate lattice coupling
0.53Ga
0.47The lattice constant of As ternary system material is about 5.87, the response cut-off wave is about 1.65 μ m, extend to about 2.5 μ m (for convenience of explanation all as example as it being responded cut-off wavelength, the present invention in fact not only is limited to 2.5 μ m, need expand to other wavelength can the rest may be inferred), then the component value of In will be increased to approximately 0.8, and corresponding the increasing to of lattice constant is about 5.98, produce about 1.9% lattice mismatch thus, need suitable resilient coating and Window layer material system for this reason.Can draw through careful analysis: lattice constant can change and have compatible material system to have InGaAs, InGaAsP, InAsP etc. multiple in this scope.For making the selected materials system with respect to In
0.8Ga
0.2As ternary system material has the transparent characteristics in broad stopband, and itself can get rid of the InGaAs system.Before address, material system such as InGaAsP, InAsP contains two kinds of V group elements, structures such as resilient coating not too are fit to use the molecular beam epitaxial process growth, and for this reason, the present invention proposes to adopt the ternary InAlAs or the quaternary InAlGaAs material system that contain aluminium to realize required structure.
In
yAl
1-yThe As material system can and be direct band gap with InP substrate lattice coupling when In component value is 0.52, the then corresponding increase of its lattice constant and keep the characteristics of direct band gap of the component value that increases In is with In
xGa
1-xThe As material system is quite similar, when In component value be increased to about 0.8 the time just can with In
0.8Ga
0.2As reaches lattice match.We notice simultaneously: to In
yAl
1-yAs and In
xGa
1-xThese two kinds of ternary system materials of As, these two kinds of elements of Al and Ga have very close sticking coefficient in molecular beam epitaxial growth, can adopt unified extension parameter to grow for this reason, thereby can guarantee to realize easily on the material growth technique.Under identical In component value, In
yAl
1-yThe energy gap of As ternary system material is all the time greater than In
yGa
1-yAs ternary system material reaches at 0.8 o'clock, In as In component value
yAl
1-yThe energy gap of the As ternary system material 0.85eV that has an appointment is significantly higher than In
xGa
1-xAbout 0.5eV of As ternary system material it is hereby ensured the realization of broad stopband transparent caching layer and window layer structure.For being applied to wavelength spread In
xGa
1-xThe broad stopband transparent caching layer and the window layer structure of As photodetector and array thereof, required In
yAl
1-yAl component value≤0.48 of As ternary system material, particularly the Al component of Window layer is lower, so also avoided problems such as easy oxidation that high Al component material may bring and characteristic instability, the reliability of device can have sufficient assurance, and problem can not brought in the doping aspect yet.Similarly, InAlGaAs contains the aluminium quaternary material and has the characteristics roughly the same with InAlAs, also can be used as the material system of realizing forbidden band transparent caching layer and window layer structure, but because it has increased a kind of element, can difficult control in the molecular beam epitaxial growth.Following narration is all with In
yAl
1-yAs ternary system material is illustrated that (patent is not restricted to In
yAl
1-yAs ternary system material, InAlGaAs is contained the aluminium quaternary material can the rest may be inferred).This In
yAl
1-yAs ternary system broad stopband transparent caching layer and window layer structure also can be applicable to adopt the InGaAs detector and the array thereof of GaAs substrate, but at this moment can be bigger in the mismatch between substrate and light absorbing zone under the same In component, resilient coating need begin to carry out gradual from higher Al component.
Two, buffer layer structure
Buffer layer structure has various ways such as multilayer layering gradual change, gradient continuous gradation and superlattice, adopts In in molecular beam epitaxial growth
yAl
1-yAll can realize during As ternary system material system, consider and wish to adopt thicker resilient coating when lattice mismatch is big to reach preferably easier and convenient control in buffering effect and the growth technique, we recommend to adopt gradient continuous gradation buffer layer structure, and (step graded buffer layer structure also can adopt similar method growth, only needing corresponding step to change the component value get final product), promptly in the growth by the In that mates with the InP substrate lattice
0.52Al
0.48As ternary system material sets out, and increases the component value (the corresponding component value that reduces Al continuously) of In in growth continuously, makes it continuous transition to In
0.8Al
0.2As ternary system material, the In that the lattice of just can growing on it then is complementary with it
0.8Ga
0.2The As light absorption layer material.
Three, window layer structure
In has grown
0.8Ga
0.2Behind the As light absorption layer material, used growth parameter(s) growth In in the time of can continuing to adopt front growth InAlAs resilient coating to finish
0.8Al
0.2As broad stopband transparent window layer, the consistency of growth parameter(s) can fully guarantee institute's growth window layer and In
0.8Ga
0.2As light absorbing zone lattice match (or mismatch is very little).
Four, the molecular beam epitaxial process of resilient coating and window layer structure is realized
Adopt molecular beam epitaxial process to realize that aforementioned buffer layer structure need change continuously to the beam intensity of In and Al, and the thickness of resilient coating generally reaches several microns, therefore can adopt In and the slow respectively continuously method that heats up and lower the temperature of Al electron gun while are realized, also can adopt method to realize In and continuous separately slowly intensification of Al electron gun or cooling.Consider that the sticking coefficient of In and Al in the molecular beam epitaxy has the characteristic of bigger difference and different electron gun itself, changing the In electron gun, to change the effect of component value bigger.For example: at calibrated back In
0.52Al
0.48When the growth rate of As per hour is about 1 micron, as required resilient coating gross thickness is 3 microns, then can adopt the speed of 0.002 ℃/s to heat up 20 ℃ to the In electron gun, adopt the speed of 0.004 ℃/s to lower the temperature 40 ℃ to the Al electron gun simultaneously, the variation of In and Al electron gun intensity is carried out synchronously, made that the In component of InAlAs reached about 0.8 when buffer growth finished; Also can adopt the speed of 0.001 ℃/s to heat up 10 ℃, adopt the speed of 0.002 ℃/s to lower the temperature 20 ℃ to the Al electron gun simultaneously, make that the In component that contains aluminium ternary or quaternary dissimilar materials of InAlAs reached about 0.80 when buffer growth finished the In electron gun.Concrete heating and cooling numerical value can require to determine after demarcating according to real composition.The intensity of In and Al electron gun need not to change during the growth window layer, needs only InAlAs growth parameter(s) used when adopting buffer growth to finish.
In sum, at the In of substrate and wavelength spread
xGa
1-xInsert energy gap between the As ternary system layers of absorbent material greater than wavelength spread In
xGa
1-xThe resilient coating that contains aluminium ternary or quaternary dissimilar materials system of As light absorption layer material is at the In of wavelength spread
xGa
1-xDeposition contains aluminium ternary or the transparent dissimilar materials layer of quaternary as Window layer on the As ternary system light absorption layer material;
Described substrate is InP or GaAs;
Described wavelength spread In
xGa
1-x0.53＜x in the As light absorbing zone＜1;
Described energy gap is greater than wavelength spread In
xGa
1-xThe As light absorption layer material contain the aluminium ternary or the quaternary dissimilar materials is In
yGa
1-yAs and In
yGa
1-yGaAs, 0.52＜y in the formula＜1.
Described wavelength spread In
xGa
1-xX=0.8 in the As light absorbing zone, promptly the wavelength spread light absorbing zone consists of In
0.8Ga
0.2As.
With [100] crystal orientation monocrystalline InP monocrystalline as substrate; The resilient coating that inserts be with the In of InP substrate lattice coupling
0.52Al
0.48As contains the parameter of aluminium ternary material and sets out, and increases the component value of In continuously, makes it continuous transition to In
0.8Al
0.2As ternary system material.
With [100] crystal orientation monocrystalline InP monocrystalline as substrate; The resilient coating that inserts be with the In of InP substrate lattice coupling
0.52Al
0.48As contains the parameter of the quaternary material of aluminium and sets out, and increases continuously the component value of In, makes it continuous transition to In
0.8Al
0.2The GaAs quaternary material.
In in wavelength spread
0.8Ga
0.2The broad stopband transparent window material that deposits on the As light absorbing zone is In
0.8Ga
0.2As ternary system material.
In in wavelength spread
0.8Ga
0.2The broad stopband transparent window material that deposits on the As light absorbing zone is In
0.8Al
0.2The GaAs quaternary material.
Resilient coating provided by the invention and Window layer are made advantage:
Adopt energy gap greater than wavelength spread In
xGa
1-xThe As light absorption layer material contain aluminium ternary or quaternary system dissimilar materials system;
On this material system, used during the detector growth and can effectively suppress misfit dislocation and be suitable for the transparent gradient graded buffer layer structure that light is advanced at the back side;
On this material system, used the transparent window layer structure that can reduce surface recombination and improve quantum efficiency during the detector growth, be suitable for the front and advance light;
Described resilient coating and/or window layer structure adopt specific molecular beam epitaxial process to grow.
Description of drawings
Fig. 1 is a kind of transparent resilient coating and window layer structure schematic diagram that contains aluminium ternary or quaternary material in broad stopband that is used for Wave scalable InGaAs detector and array thereof provided by the invention.
Embodiment
Embodiment below by accompanying drawing further specifies substantive distinguishing features of the present invention and advance, but limits the present invention absolutely not, also is that the present invention is confined to embodiment absolutely not.
Embodiment: a kind of Wave scalable InGaAs photodetector array epitaxial material that adopts InAlAs gradient gradual change broad stopband transparent caching layer and InAlAs broad stopband transparent window layer
Implementation step:
1, needing the cut-off wavelength of InGaAs wavelength spread detector array is that 2.5 μ m are (for convenience of explanation all as example, embodiment is not restricted to 2.5 μ m, need expand to other wavelength can the rest may be inferred), therefore select the In component of InGaAs light absorbing zone to be about 0.8;
2, need the material of InGaAs wavelength spread detector and array thereof can satisfy the front and advance the light requirement, also can be applicable to that the back side advances photo structure simultaneously, therefore adopt the semi-insulating InP monocrystalline in [100] crystal orientation as substrate;
3, detector adopts Pon N (P-type material is on n type material) structure (can the rest may be inferred to N on P-structure), therefore to In
yAl
1-yThe transparent gradient graded buffer layer in As broad stopband carries out N type highly doped (simultaneously also as following contact layer), In with Si
0.8Ga
0.2It is low-doped that As wavelength spread light absorbing zone carries out the N type with Si, In
0.8Al
0.2It is highly doped that As broad stopband transparent window layer is carried out the P type with Be;
4, conventional molecular beam epitaxial method is adopted in epitaxial growth, Epi-Ready InP substrate is being carried out the In that grows earlier after desorption is handled
yAl
1-yThe transparent gradient graded buffer layer in As broad stopband is promptly by the In of lattice match
0.52Al
0.48The growth parameter(s) of As material begins, in growth course, adopt the speed of 0.002 ℃/s to heat up 20 ℃ continuously to the In electron gun, adopt the speed of 0.004 ℃/s to lower the temperature 40 ℃ continuously to the Al electron gun simultaneously, 10000 seconds required total times, (concrete heating and cooling amplitude, speed and total time can require to adjust according to reality, for example: speed that can corresponding increase heating and cooling when wishing that resilient coating is thinner but keeping the heating and cooling amplitude constant, but still keep the certain proportion relation), carry out highly dopedly simultaneously with Si, doping content is controlled at 1～2 * 10
18Cm
-3, about 3 microns of resilient coating gross thickness;
5, on resilient coating, use In
0.8Ga
0.2The growth parameter(s) of the As material low-doped light absorbing zone of growing, doping content be controlled at～and 5 * 10
16Cm
-3(or undoping), about 2 microns of thickness (or adjusting according to actual needs);
6, at wavelength spread In
0.8Ga
0.2Use In on the low-doped light absorbing zone of As
0.8Al
0.2The growth parameter(s) of As material (promptly and In
0.52Al
0.48The electron gun temperature that the growth parameter(s) of As material is compared In improves 20 ℃, and the electron gun temperature of Al reduces by 40 ℃) the highly doped In of growth Be
0.8Al
0.2The As Window layer, doping content is controlled at 1～2 * 10
18Cm
-3, about 1 micron of thickness;
7, finish growth, under protective atmosphere, lower the temperature, take out epitaxial material at last and carry out necessary test and be used for the unit or array and focal plane device making.
Claims (9)
1, a kind of broad stopband transparent caching layer and Window layer that is used for Wave scalable InGaAs photodetector and array thereof is characterized in that the In in substrate and wavelength spread
xGa
1-xInsert energy gap between the As ternary system layers of absorbent material greater than wavelength spread In
xGa
1-xThe resilient coating that contains aluminium ternary or quaternary dissimilar materials system of As light absorption layer material is at the In of wavelength spread
xGa
1-xDeposition contains aluminium ternary or the transparent dissimilar materials layer of quaternary as Window layer on the As ternary system light absorption layer material;
Described substrate is InP or GaAs;
Described wavelength spread In
xGa
1-x0.53＜x in the As light absorbing zone＜1;
Described energy gap is greater than wavelength spread In
xGa
1-xThe As light absorption layer material contain the aluminium ternary or the quaternary dissimilar materials is In
yGa
1-yAs and In
yGa
1-yGaAs, 0.52＜y in the formula＜1.
2, by described broad stopband transparent caching layer and the Window layer that is used for Wave scalable InGaAs photodetector and array thereof of claim 1, it is characterized in that described wavelength spread In
xGa
1-xX=0.8 in the As light absorbing zone, promptly the wavelength spread light absorbing zone consists of In
0.8Ga
0.2As.
3,, it is characterized in that InP monocrystalline with [100] crystal orientation is as substrate by claim 1 or 2 described broad stopband transparent caching layer and the Window layer that are used for Wave scalable InGaAs photodetector and array thereof; The resilient coating that inserts be with the In of InP substrate lattice coupling
0.52Al
0.48As contains the parameter of aluminium ternary material and sets out, and increases the component value of In continuously, makes it continuous transition to In
0.8Al
0.2As ternary system material.
4, by claim 1 or 2 described broad stopband transparent caching layer and the Window layer that are used for Wave scalable InGaAs photodetector and array thereof, it is characterized in that with [100] crystal orientation monocrystalline InP monocrystalline as substrate; The resilient coating that inserts be with the In of InP substrate lattice coupling
0.52Al
0.48As contains the parameter of the quaternary material of aluminium and sets out, and increases continuously the component value of In, makes it continuous transition to In
0.8Al
0.2The GaAs quaternary material.
5, by described broad stopband transparent caching layer and the Window layer that is used for Wave scalable InGaAs photodetector and array thereof of claim 3, it is characterized in that In in wavelength spread
0.8Ga
0.2The broad stopband transparent window material that deposits on the As light absorbing zone is In
0.8Al
0.2As ternary system material.
6, by described broad stopband transparent caching layer and the Window layer that is used for Wave scalable InGaAs photodetector and array thereof of claim 4, it is characterized in that In in wavelength spread
0.8Ga
0.2The broad stopband transparent window material that deposits on the As light absorbing zone is In
0.8Al
0.2The GaAs quaternary material.
7, make the broad stopband transparent caching layer of Wave scalable InGaAs photodetector and array thereof and the method for Window layer of being used for as claimed in claim 1 or 2, it is characterized in that:
1. adopt [100] crystal orientation InP or GaAs monocrystalline as substrate;
2. detector adopts P-type material in structure on the n type material or adopt n type material structure on P-type material, growth broad stopband gradient graded buffer layer on substrate, and it is the In from the lattice parameter coupling
0.52Al
0.48The growth parameter(s) of As material is a starting point, makes the gradient graded buffer layer;
3. with step In 2.
0.52Al
0.48The As growth parameter(s) begins, the In electron gun adopts the speed of 0.002 ℃/s to heat up 20 ℃ continuously, adopt the speed of 0.004 ℃/s to lower the temperature 40 ℃ continuously to the Al electron gun simultaneously, In electron gun and Al electron gun Strength Changes are carried out synchronously, continuous transition was to In when buffer growth was finished
0.8Ga
0.2As ternary system material;
4. then at In
0.8Ga
0.2Grow the In of lattice match with it on the As ternary system material layer
0.8Ga
0.2The As light absorption layer material;
5. at last at In
0.8Ga
0.2On the As light absorbing zone with the 3. described In of step
0.8Ga
0.2As material growth parameter(s) grows In
0.8Al
0.2The As Window layer.
8, by the described broad stopband transparent caching layer of Wave scalable InGaAs photodetector and array thereof and the manufacture method of Window layer of being used for of claim 7, it is characterized in that described In
yAl
1-yThe transparent graded buffer layer in As broad stopband is that Si mixes, and doping content is (1～2) * 10
18Cm
-3, the resilient coating gross thickness is 3 microns.
9,, it is characterized in that Window layer is the In that Be mixes by the described broad stopband transparent caching layer of Wave scalable InGaAs photodetector and array thereof and the manufacture method of Window layer of being used for of claim 7
0.8Al
0.2As, doping content is (1～2) * 10
18Cm
-3, thickness is 1 micron.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103077979A (en) * | 2013-01-07 | 2013-05-01 | 中国科学院上海微系统与信息技术研究所 | Wavelength expansion InGaAs detector structure on GaAs substrate |
| CN104538484A (en) * | 2014-12-04 | 2015-04-22 | 中国科学院上海微系统与信息技术研究所 | Epitaxial structure of wavelength expansion type InGaAs avalanche photodiode |
| CN104576785A (en) * | 2014-12-04 | 2015-04-29 | 中国科学院上海微系统与信息技术研究所 | Mutation relaxation buffer layer for InGaAs probe with high In component |
| CN104701393A (en) * | 2015-03-13 | 2015-06-10 | 上海集成电路研发中心有限公司 | Dual-waveband photoelectric detector and preparation method thereof |
| CN108807588A (en) * | 2018-06-15 | 2018-11-13 | 杭州国翌科技有限公司 | One chip n-i-p-i-n molded breadth spectrum photodetectors |
| CN112567214A (en) * | 2018-08-14 | 2021-03-26 | 莱比锡大学 | Device and method for determining the wavelength of radiation |
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| US5652435A (en) * | 1995-09-01 | 1997-07-29 | The United States Of America As Represented By The Secretary Of The Air Force | Vertical structure schottky diode optical detector |
| US6407439B1 (en) * | 1999-08-19 | 2002-06-18 | Epitaxial Technologies, Llc | Programmable multi-wavelength detector array |
| US7148463B2 (en) * | 2003-07-16 | 2006-12-12 | Triquint Semiconductor, Inc. | Increased responsivity photodetector |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103077979A (en) * | 2013-01-07 | 2013-05-01 | 中国科学院上海微系统与信息技术研究所 | Wavelength expansion InGaAs detector structure on GaAs substrate |
| CN104538484A (en) * | 2014-12-04 | 2015-04-22 | 中国科学院上海微系统与信息技术研究所 | Epitaxial structure of wavelength expansion type InGaAs avalanche photodiode |
| CN104576785A (en) * | 2014-12-04 | 2015-04-29 | 中国科学院上海微系统与信息技术研究所 | Mutation relaxation buffer layer for InGaAs probe with high In component |
| CN104576785B (en) * | 2014-12-04 | 2016-08-17 | 中国科学院上海微系统与信息技术研究所 | A kind of sudden change relaxed buffer layers for high In ingredient InGaAs detector |
| CN104701393A (en) * | 2015-03-13 | 2015-06-10 | 上海集成电路研发中心有限公司 | Dual-waveband photoelectric detector and preparation method thereof |
| CN108807588A (en) * | 2018-06-15 | 2018-11-13 | 杭州国翌科技有限公司 | One chip n-i-p-i-n molded breadth spectrum photodetectors |
| CN112567214A (en) * | 2018-08-14 | 2021-03-26 | 莱比锡大学 | Device and method for determining the wavelength of radiation |
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