CN102117801A - High-power light-emitting diode module structure and manufacturing method thereof - Google Patents
High-power light-emitting diode module structure and manufacturing method thereof Download PDFInfo
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- CN102117801A CN102117801A CN200910312779XA CN200910312779A CN102117801A CN 102117801 A CN102117801 A CN 102117801A CN 200910312779X A CN200910312779X A CN 200910312779XA CN 200910312779 A CN200910312779 A CN 200910312779A CN 102117801 A CN102117801 A CN 102117801A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The invention discloses a high-power light-emitting diode module structure and a manufacturing method thereof. The high-power light-emitting diode module structure at least comprises a module substrate and a light-emitting diode assembly, wherein the module substrate comprises a radiating substrate and a plurality of layers of circuits, and the radiating substrate comprises at least one assembly joint column convexly arranged on the upper surface of the radiating substrate. The high-power light-emitting diode module structure is mainly characterized in that no low-conductivity-coefficient dielectric layer or resin is arranged between the module substrate and the light-emitting diode assembly, the main radiating part of the light-emitting assembly is directly connected on the assembly joint column of the module substrate without obstacle, can effectively conduct heat sources out of the radiating substrate, and is high in reliability, high in design elasticity, high in radiating performance and low in cost.
Description
Technical field:
The present invention relates to a kind of high power light emitting diode module structure, outstanding reference and a kind of radiating requirements at the high power assembly, the ability that refers in particular to the enhancing design also relates to the manufacture method of this modular structure simultaneously to reach the systematized light-emitting diode (LED) module structure of altitude module.
Background technology:
The continuous lifting with light-emitting diode chip for backlight unit power popularized along with photovoltaic, the multi-chip light emitting diode modularization becomes the new trend of electrical lighting gradually, therefore the substrate that electrically connects as the light-emitting diode multi-chip module, its coiling ability and heat dissipation characteristics become one of key factor whether new product can develop smoothly then.
The heat-radiating aluminum plate of early-stage development (Metal Core PCB) owing to contain resin below the light-emitting diode component position, therefore has the problem of integral heat sink poor effect to produce.See also shown in Figure 9ly, it is the high heat-conducting type light-emitting diode (LED) module structural profile schematic diagram of known technology.As shown in the figure: this high heat-conducting type light-emitting diode (LED) module structure 5 comprises an aluminium base 50 and several High Power LED assemblies 60.Wherein attach a nonconducting conductive adhesive film 51 on this aluminium base 50, on this individual layer circuit and be formed with several assembly connection pads 52 and several electrical connection pads in series or in parallel with each other 53,54.By surface mount technology with two electrodes 61,62 on this light-emitting diode component 60 respectively with corresponding electrical connection pad 53,54 conductings, and this High Power LED assembly 60 is fixed on those assembly connection pads 52.
Yet, by above-mentioned structure as can be known, with the made light-emitting diode (LED) module of conventional aluminum substrate, the thermal source that is produced during the running of its chip needs to conduct to via this assembly connection pad 52 and this conductive adhesive film 51 this aluminium base 50 and does to store or loose and overflow, but wherein the conductive coefficient of this conductive adhesive film 51 is much smaller than the common metal material, and then the problem that causes whole heat-conducting effect not good is arranged; In addition, the line construction of this substrate individual layer also limits the elasticity of its modular design.
Based on the specific demand of light-emitting diode (LED) module, so there is other can provide the multilager base plate manufacturing technology of preferred metal heat radiation approach (Thermal Pathway) to be developed one by one to heat dissipation characteristics.A kind of printing conductive elargol that utilizes is promptly proposed as connecting upper and lower two-layer mode as the Toshiba of Japanese firm, so that a conduction and the heat conduction platform of putting chip to be provided, as U. S. application patent the 5865934th and No. 7419382, and see also shown in Figure 10 a to Figure 10 d, it is the heat-radiating substrate making schematic flow sheet of another kind of known technology.As shown in the figure: at first be to utilize printing and roasting mode, form several conductive silver projections 81 on a Copper Foil 80, shown in Figure 10 a; Then force in a preimpregnation cloth (Prepreg) 82, make those conductive silver projection 81 thorns pass this preimpregnation cloth 82, shown in Figure 10 b; Another sheet Copper Foil 83 being pressed on this preimpregnation cloth 82 is revealed on this preimpregnation cloth 82 conductive silver projection 81 outward, shown in Figure 10 c with several again; Form a line layer 84 at last, shown in Figure 10 d.
Though can upper and lower layer be electrically conducted via those conductive silver projections 81 with the formed line layer 84 of above-mentioned pressing mode; Yet, because of its conductive silver projection 81 is not integrally formed with copper wire, so in practical application, will produce the problem that causes reliabilitys such as separating because of thermal expansion.In addition,, also or use other material,, make it become the cooling base of accepting chip, problems such as processing procedure complexity and fine ratio of product be not good are also arranged in practical application as copper bump etc. if desire extends the area that this technology then need strengthen this conductive silver projection 81.
In addition, the mode that also has another kind of heat-radiating substrate to form sees also shown in Figure 11 a to Figure 11 d, and it is the heat-radiating substrate making schematic flow sheet of another known technology.As shown in the figure: at first provide a thick copper coin 90, and utilize etching mode, on the one side of this thick copper coin 90, form several copper bumps 901, shown in Figure 11 a; Then be coated with and toast an insulating material 91 thereon, shown in Figure 11 b; On this insulating material 91, form a metal copper layer 92 again, shown in Figure 11 c; Form a line layer 93 at last, shown in Figure 11 d.
Though the assembly connection pad with above-mentioned heat-radiating substrate is identical or integrally formed metal with heating panel, its circuit is directly to grow up on the insulating material 91 by slaking, and therefore the not good integrity problem that waits of adhesive force is arranged; In addition, made in this way light-emitting diode (LED) module is except the processing procedure costliness, and the restriction of its individual layer circuit coiling is still one of bottleneck that causes the modular design maximum.
In sum, the reliability that the device-restrictive that known technology met with produced, design flexibility, thermal diffusivity and problem such as cost an arm and a leg, therefore, it is required when reality is used generally can't to meet the user.
Summary of the invention:
Technical problem to be solved by this invention is: at above-mentioned the deficiencies in the prior art, provide high power light emitting diode module structure of the high radiating effect of a kind of tool and preparation method thereof.
In order to address the above problem, the technical solution adopted in the present invention is: a kind of high power light emitting diode module structure, at least comprise module substrate and light-emitting diode component, be characterized in: the main heat radiation approach of described light-emitting diode component engages heat conduction with directly without hindrance on this module substrate, wherein every ground:
This module substrate comprises heat-radiating substrate and multilayer line, this heat-radiating substrate is on smooth and the tool, the base on following two surfaces, comprise at least one assembly bond post that is raised in this heat-radiating substrate upper surface, and the lower surface of this heat-radiating substrate extends to the edge of this module substrate and becomes the lower surface of this module substrate, this multilayer line with this protruding assembly bond post be core be pressed on this heat-radiating substrate upper surface and to around extend, and and between this assembly bond post and this heat-radiating substrate with the insulating barrier fluid-tight engagement, form this insulating barrier, this assembly bond post and this multilayer line are revealed in the upper surface of this module substrate, and this heat-radiating substrate is revealed in the lower surface of this module substrate;
This light-emitting diode component is fixed on the assembly bond post of this module substrate with Heat Conduction Material, and the electrode on this light-emitting diode component is connected with electrical connection pad on this module substrate.
The manufacture method of high power light emitting diode module structure of the present invention, this method comprises the following step at least:
(A) provide heat-radiating substrate, and form at least one assembly bond post in the upper surface of this heat-radiating substrate;
(B) provide circuit base plate and insulating barrier, and form at least one through hole on this circuit base plate and this insulating barrier;
(C) to should the assembly bond post after on this through hole, with heating, pressuring method this circuit base plate is pressed on the upper surface of this heat-radiating substrate with this insulating barrier, this assembly bond post is buried in this insulating barrier and corresponding to this through hole manifests its surface;
(D) form electric knitting layer on the surface of the above-mentioned insulating barrier that exposes, circuit base plate and assembly bond post, and engage and circuit base plate and this assembly bond post of this pressing that electrically conducts with this electricity knitting layer;
(E) in the circuit base plate of this pressing and should the electricity knitting layer on form line layer and constitute multilayer line after, on this line layer, carry out the making of welding resisting layer and barrier layer again, to finish the multilayer module substrate of complete patternization;
(F) light-emitting diode component is fixed on the assembly bond post of this module substrate with Heat Conduction Material, and the electrode on this light-emitting diode component is connected with electrical connection pad on this module substrate.
So, the thermal source that produces in the time of can effectively assembly being operated directly reaches this heat-radiating substrate via the assembly bond post of below and derives; In addition, more can provide the required coiling that is electrical connected of main in the module, passive component, and then the ability that strengthens design is to reach the systematized purpose of altitude module around the multilayer line of this assembly bond post.
Description of drawings:
Fig. 1 is the light-emitting diode (LED) module structural profile schematic diagram of a preferred embodiment of the present invention.
Fig. 2 is the making flow process generalized section one of a preferred embodiment of the present invention.
Fig. 3 is the making flow process generalized section two of a preferred embodiment of the present invention.
Fig. 4 is the making flow process generalized section three of a preferred embodiment of the present invention.
Fig. 5 is the making flow process generalized section four of a preferred embodiment of the present invention.
Fig. 6 is the making flow process generalized section five of a preferred embodiment of the present invention.
Fig. 7 is the making flow process generalized section six of a preferred embodiment of the present invention.
Fig. 8 is the making flow process generalized section seven of a preferred embodiment of the present invention.
Fig. 9 is the high heat-conducting type light-emitting diode (LED) module structural profile schematic diagram of known technology.
Figure 10 a is the making schematic flow sheet one of the heat-radiating substrate of another kind of known technology.
Figure 10 b is the making schematic flow sheet two of the heat-radiating substrate of another kind of known technology.
Figure 10 c is the making schematic flow sheet three of the heat-radiating substrate of another kind of known technology.
Figure 10 d is the making schematic flow sheet four of the heat-radiating substrate of another kind of known technology.
Figure 11 a is the making schematic flow sheet one of the heat-radiating substrate of another known technology.
Figure 11 b is the making schematic flow sheet two of the heat-radiating substrate of another known technology.
Figure 11 c is the making schematic flow sheet three of the heat-radiating substrate of another known technology.
Figure 11 d is the making schematic flow sheet four of the heat-radiating substrate of another known technology.
Label declaration:
Light-emitting diode (LED) module structure 1 module substrate 10
Heat-radiating substrate 11 thick copper soleplate 11a
Upper surface 111 lower surfaces 112
The line layer 14c of the superiors insulating barrier 15
Hole 18 electric knitting layers 19 electrically conduct
Light- emitting diode component 20,20a electrode 21,21a
Light-emitting diode (LED) module structure 5 aluminium bases 50
Conductive adhesive film 51 assembly connection pads 52
Electrode 61,62 Copper Foils 80
Copper Foil 83 line layers 84
Thick copper coin 90 copper bumps 901
Insulating material 91 metal copper layer 92
Embodiment:
See also shown in Figure 1ly, be the light-emitting diode (LED) module structural profile schematic diagram of a preferred embodiment of the present invention.As shown in the figure: the present invention is a kind of high power light emitting diode module structure, and in a preferred embodiment, this light-emitting diode (LED) module structure 1 comprises a module substrate 10 and several light-emitting diode components 20 at least.
Above-mentioned module substrate 10 comprises a heat-radiating substrate 11, this heat-radiating substrate 11 is on the smooth and tool, following two surfaces 111,112 base, comprise at least one assembly bond post 12 that is raised in these heat-radiating substrate 11 upper surfaces 111, those assembly bond post 12 surfaces have a metallic film 13, can paste the interface of assembly in order to conduct, and the lower surface 112 of this heat-radiating substrate 11 extends to the edge of this module substrate 10 and becomes the lower surface of this module substrate 10, the area of dissipation of module maximum can be provided, the lower surface 112 of this heat-radiating substrate 11 there is no any thermal insulation layer or any line layer again, and therefore the heat radiation interface of module the best also can be provided; In addition, this module substrate 10 still comprises a multilayer line 14, this multilayer line 14 is a core with this protruding assembly bond post 12, with an insulating barrier 15 entirely be pressed on these heat-radiating substrate 11 upper surfaces 111 and to around extend, and this insulating barrier 15 is between this multilayer line layer 14, make this multilayer line layer 14, there is not any slit with these insulating barrier 15 fluid-tight engagement between this heat-radiating substrate 11 and this assembly bond post 12, therefore the light-emitting diode (LED) module of high-reliability can be provided, form this insulating barrier 15, this assembly bond post 12 and this multilayer line 14 are revealed in the upper surface of this module substrate 10, and this heat-radiating substrate 11 is revealed in the lower surface of this module substrate 10.Wherein, between circuit base plate 14a on this multilayer line 14 and following line layer 14b, link with the hole that electrically conducts, and the line layer 14c of the superiors of this multilayer line 14 goes up and has several electrical connection pads 16, can be in order to connect electrode 21, the 21a on those light-emitting diode components 20, the 20a, and these electrical connection pad 16 surfaces also have this metallic film 13, and this metallic film 13 can be nickel/gold, nickel/silver or the nickel/palladium of the three-layer metal/gold of double layer of metal or is the substitutional connection substrate; In present embodiment, multilayer line 14 surfaces of these assembly bond post 12 surfaces and pressing can be the form of a copline each other, also can be and have a difference in height form, and, can form between the multilayer line 14 of this assembly bond post 12 and pressing and electrically conduct or electrically not conducting by the obstruct of this insulating barrier 15.
Those light-emitting diode components 20,20a are individually fixed on the assembly bond post 12 of this module substrate 10 with Heat Conduction Materials 22 such as metal film, potsherd or heat-conducting glues, and the electrode 21 on this light-emitting diode component 20,20a, 21a are connected with electrical connection pad 16 on this module substrate 10.The above constitutes one brand-new and be the light-emitting diode (LED) module structure 1 of high power type.
The present invention is characterized in: this assembly bond post 12 is revealed in the upper surface of this module substrate 10, this heat-radiating substrate 11 then is revealed in the lower surface of this module substrate 10, therefore, the dielectric layer or the resin that there is no any low thermal conductivity between this module substrate 10 and this light-emitting diode component 20, the 20a intercept, and the main heat radiation approach (Thermal Pathway) that makes this light-emitting diode component 20,20a is to do to store on this module substrate 10 or diffusing overflowing every ground joint heat conduction with directly without hindrance.
Please further consult Fig. 2 to shown in Figure 8, as shown in the figure: finish the manufacture method of above-mentioned high power light emitting diode module structure 1, comprise the following steps: at least
(A) as shown in Figures 2 and 3, one thick copper soleplate 11a is provided, utilize etching mode to make this thick copper soleplate 11a form heat-radiating substrate 11, and be formed with several assembly bond posts 12 at the upper surface 111 of this heat-radiating substrate 11, in present embodiment, this thick copper soleplate 11a one does not contain the metal base plate of dielectric material, and after etching formed heat-radiating substrate 11 and this assembly bond post 12 be no any material engage integrally formed.Wherein, modes such as the present invention can also electroplate, punching press mold or welding reach the upper surface 111 that this assembly bond post 12 is formed at this heat-radiating substrate 11, between the assembly bond post 12 that makes formation and the heat-radiating substrate 11 be with alloy material engage non-integrally formed, and, according to different processing procedures, the material of these heat-radiating substrate 11 uses system can comprise copper, nickel, iron, aluminium, copper alloy, carborundum (SiC), graphite, pottery or other equivalent Heat Conduction Material;
(B) as shown in Figure 4, an one prior double layer substrate 140 and an insulating barrier 15 that forms tool single face circuit 14b through etching mode is provided, and utilize make-up machine to form at least one through hole 17 on this double layer substrate 140 and this insulating barrier 15, the aperture area of this through hole 17 is equaled at least or to be slightly larger than the area and the position of this assembly bond post 12 corresponding mutually, in present embodiment, this double layer substrate 140 electrically connects with the hole 18 of electrically conducting in advance and goes up circuit base plate 14a and following line layer 14b, and this insulating barrier 15 is one to contain the insulating material that glass fibre and epoxy resin blend together.Wherein, the present invention also can use laser electroplating hole, mechanical plating hole or printing conductive glue to link and should go up circuit base plate 14a and following line layer 14b;
(C) as shown in Figure 5, to should assembly bond post 12 after on this through hole, this double layer substrate is pressed on the upper surface of this heat-radiating substrate 11 with heating, pressuring method with this insulating barrier 15, this assembly bond post 12 is buried in this insulating barrier 15, and utilize polish-brush, electricity to penetrate or the electric surface that manifests this assembly bond post 12 except that modes such as the glue that overflows corresponding to this through hole of starching;
(D) as shown in Figure 6, on above-mentioned insulating barrier 15, assembly bond post 12 surfaces of exposing and last circuit base plate 14a, form an electric knitting layer 19 with electroless-plating and plating mode, and engage and last circuit base plate 14a and this assembly bond post 12 of the double layer substrate of this pressing that electrically conducts with this electricity knitting layer 19, in present embodiment, this electricity knitting layer 19 is a metal copper layer;
(E) as shown in Figures 7 and 8, in the last circuit base plate of the double layer substrate of this pressing and should the electricity knitting layer on, after forming a line layer 14c of the superiors and constitute a multilayer line 14 with etching mode, on the line layer 14c of these the superiors, carry out the making of welding resisting layer 30 and barrier layer (being metallic film 13) again, to finish the multilayer module substrate 10 of a complete patternization.Wherein, the line layer 14c surface that this exposes has several electrical connection pads 16, and those electrical connection pad 16 surfaces have this metallic film 13, can be used as the interface that engages its electrode of light-emitting diode component, and, the assembly bond post 1 that this exposes
2 surfaces also have this metallic film 13, can be used as the interface of pasting this light-emitting diode component; And
(F) as above-mentioned shown in Figure 1, can utilize surface mount technology (Surface Mounting Technology, SMT) with light-emitting diode component 20a with print solder paste 22, cross tin stove mode and be welded on the assembly bond post 12 of this module substrate 10, and the electrode 21a on this light-emitting diode component 20a is connected with electrical connection pad 16 on this module substrate 10.Wherein, this light-emitting diode component 20a also can be crystal grain or both coexistences except can be the above-mentioned packaging body of having finished encapsulation; Therefore, after also can utilizing crystal grain joining technique (Die Bonding) earlier this light-emitting diode component 20 to be placed on the assembly bond post 12 of this module substrate 10 with Heat Conduction Material (being metallic film 13), the electrode 21 on this light-emitting diode component 20 is connected with electrical connection pad 16 on this module substrate 10 via the routing mode.
In present embodiment, above-mentioned multilayer module substrate is because its assembly bond post and cooling base are the metal that an one is shaped, so can be effectively with the heat conduction approach of conventional technique known, by the mode that originally conducts to aluminium base via assembly connection pad, heat-conducting resin, be reduced to directly to conduct to large-area heat-radiating substrate storage or loose and overflow by this assembly bond post, therefore, can effectively solve problems such as the whole heat-conducting effect of known technology is not good.In addition, the upper and lower line layer of this multilayer module substrate not only can electrically interconnect, and be several continuous or discontinuous circuits in series or in parallel with each other, except can connecting several High Power LED assemblies by this, more can connect other main, passive component by the electrical coiling ability of this multilayer line, and then the elasticity of enhancing modular design is to reach the systematized purpose of altitude module.
By this, by the invention described above one preferred embodiment as can be known, the characteristics of high power light emitting diode module of the present invention are that light-emitting diode component can directly be engaged on the assembly bond post of high heat conduction, utilize this assembly bond post to bury in insulating barrier, can improve the obstruct that the conventional module substrate is caused on the main heat radiation approach of light-emitting diode because of dielectric layer or resin, therefore the thermal source that produced when running of this light-emitting diode component can be directly and is reached the heat-radiating substrate of this assembly bond post below effectively and derive, and need not be via dielectric layer in the substrate or resin; In addition, be pressed on the multilayer line on this heat-radiating substrate owing to closely be surrounded on around this assembly bond post, can not only avoid causing the interference of heat radiation approach, the required coiling that is electrical connected of main in the module, passive component more can be provided, and then the ability of enhancing design, to reach the systematized purpose of altitude module, be to have high-reliability, high design flexibility, high-cooling property and tool low-cost light-emitting diode modular structure and preparation method thereof for a kind of.
In sum, a kind of high power light emitting diode module structure of the present invention and preparation method thereof, can effectively improve the various shortcoming of prior art, utilize High Power LED can directly be engaged on the assembly bond post of high heat conduction, the thermal source that is produced in the time of can effectively it being operated is derived from heat-radiating substrate, and can strengthen the ability of design by the coiling ability of multilayer line, to reach the systematized purpose of altitude module.
Claims (20)
1. a high power light emitting diode module structure comprises module substrate and light-emitting diode component at least, it is characterized in that: the main heat radiation approach of described light-emitting diode component engages heat conduction with directly without hindrance on this module substrate, wherein every ground:
This module substrate comprises heat-radiating substrate and multilayer line, this heat-radiating substrate is on smooth and the tool, the base on following two surfaces, comprise at least one assembly bond post that is raised in this heat-radiating substrate upper surface, and the lower surface of this heat-radiating substrate extends to the edge of this module substrate and becomes the lower surface of this module substrate, this multilayer line with this protruding assembly bond post be core be pressed on this heat-radiating substrate upper surface and to around extend, and and between this assembly bond post and this heat-radiating substrate with the insulating barrier fluid-tight engagement, form this insulating barrier, this assembly bond post and this multilayer line are revealed in the upper surface of this module substrate, and this heat-radiating substrate is revealed in the lower surface of this module substrate;
This light-emitting diode component is fixed on the assembly bond post of this module substrate with Heat Conduction Material, and the electrode on this light-emitting diode component is connected with electrical connection pad on this module substrate.
2. high power light emitting diode module structure as claimed in claim 1 is characterized in that: what engage for no any material between described assembly bond post and this heat-radiating substrate is integrally formed.
3. high power light emitting diode module structure as claimed in claim 1 is characterized in that: non-integrally formed for what engage with alloy material between described assembly bond post and this heat-radiating substrate.
4. high power light emitting diode module structure as claimed in claim 1 is characterized in that: the surface of described assembly bond post and the surface of this multilayer line are the copline state.
5. high power light emitting diode module structure as claimed in claim 1 is characterized in that: the surface of described assembly bond post and the surface of this multilayer line have difference in height.
6. high power light emitting diode module structure as claimed in claim 1 is characterized in that: described assembly bond post and this multilayer line are for electrically connecting.
7. high power light emitting diode module structure as claimed in claim 1 is characterized in that: described assembly bond post and this multilayer line be not for electrically being connected.
8. high power light emitting diode module structure as claimed in claim 1 is characterized in that: described Heat Conduction Material is metal film, potsherd or heat-conducting glue.
9. high power light emitting diode module structure as claimed in claim 1, it is characterized in that: described multilayer line is for comprising one or more layers of circuit, and on the superiors' circuit, have at least one electrical connection pad, use in order to conduct and the electrode electric connection on this light-emitting diode component.
10. high power light emitting diode module structure as claimed in claim 10 is characterized in that: described electrical connection pad surface has a metallic film, and is the several metal levels that comprise nickel/gold, nickel/silver or nickel/palladium/gold, or the substitutional connection substrate.
11. high power light emitting diode module structure as claimed in claim 1 is characterized in that: described multilayer line electrically connects upper and lower line layer with the hole that electrically conducts, laser electroplating hole, mechanical plating hole or printing conductive glue.
12. high power light emitting diode module structure as claimed in claim 1 is characterized in that: the material of described heat-radiating substrate is copper, nickel, iron, aluminium, copper alloy, carborundum, graphite or pottery.
13. high power light emitting diode module structure as claimed in claim 1 is characterized in that: the multilayer line of described module substrate is several continuous or discontinuous circuits in series or in parallel with each other.
14. high power light emitting diode module structure as claimed in claim 1 is characterized in that: described light-emitting diode component is crystal grain, finishes the packaging body of encapsulation or both coexistences.
15. the manufacture method of a high power light emitting diode module structure as claimed in claim 1 is characterized in that: this method comprises the following step at least:
(A) provide heat-radiating substrate, and form at least one assembly bond post in the upper surface of this heat-radiating substrate;
(B) provide circuit base plate and insulating barrier, and form at least one through hole on this circuit base plate and this insulating barrier;
(C) to should the assembly bond post after on this through hole, with heating, pressuring method this circuit base plate is pressed on the upper surface of this heat-radiating substrate with this insulating barrier, this assembly bond post is buried in this insulating barrier and corresponding to this through hole manifests its surface;
(D) form electric knitting layer on the surface of the above-mentioned insulating barrier that exposes, circuit base plate and assembly bond post, and engage and circuit base plate and this assembly bond post of this pressing that electrically conducts with this electricity knitting layer;
(E) in the circuit base plate of this pressing and should the electricity knitting layer on form line layer and constitute multilayer line after, on this line layer, carry out the making of welding resisting layer and barrier layer again, to finish the multilayer module substrate of complete patternization;
(F) light-emitting diode component is fixed on the assembly bond post of this module substrate with Heat Conduction Material, and the electrode on this light-emitting diode component is connected with electrical connection pad on this module substrate.
16. the manufacture method of high power light emitting diode module structure as claimed in claim 15 is characterized in that: the assembly bond post of described step (A) is formed at the upper surface of this heat-radiating substrate by etching, plating, punching press mold or welding.
17. the manufacture method of high power light emitting diode module structure as claimed in claim 15 is characterized in that: the aperture area of described through hole is equal to or greater than the area of this assembly bond post and the position is corresponding mutually.
18. the manufacture method of high power light emitting diode module structure as claimed in claim 15 is characterized in that: described step (C) is penetrated with polish-brush, electricity or electricity is starched the surface that the mode of removing the glue that overflows manifests this assembly bond post.
19. the manufacture method of high power light emitting diode module structure as claimed in claim 15 is characterized in that: the light-emitting diode component of described step (F) is welded on the assembly bond post of this module substrate with print solder paste, mistake tin stove mode by surface mount technology.
20. the manufacture method of high power light emitting diode module structure as claimed in claim 15, it is characterized in that: the light-emitting diode component of described step (F) is placed in Heat Conduction Material on the assembly bond post of this module substrate by the crystal grain joining technique, via the routing mode electrode on this light-emitting diode component is connected with electrical connection pad on this module substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910312779A CN102117801B (en) | 2009-12-31 | 2009-12-31 | Manufacturing method of high-power light-emitting diode module structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910312779A CN102117801B (en) | 2009-12-31 | 2009-12-31 | Manufacturing method of high-power light-emitting diode module structure |
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| CN102117801A true CN102117801A (en) | 2011-07-06 |
| CN102117801B CN102117801B (en) | 2012-10-10 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106090652A (en) * | 2016-08-10 | 2016-11-09 | 李铭钰 | High power lighting lamp |
| CN104091876B (en) * | 2014-07-29 | 2016-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparency carrier LED encapsulation structure |
| CN108767090A (en) * | 2018-06-15 | 2018-11-06 | 南通沃特光电科技有限公司 | A kind of light-emitting diode encapsulation structure and its manufacturing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005166775A (en) * | 2003-12-01 | 2005-06-23 | Osram-Melco Ltd | Light emitting diode module and its manufacturing method |
| JP5073179B2 (en) * | 2005-06-09 | 2012-11-14 | 株式会社住友金属エレクトロデバイス | Aluminum nitride sintered compact for storing light-emitting elements |
| JP2007311760A (en) * | 2006-04-20 | 2007-11-29 | Kokubu Denki Co Ltd | Led module |
| KR20080007961A (en) * | 2006-07-19 | 2008-01-23 | 알티전자 주식회사 | Cooling device of led module and manufacturing method thereof |
| TW200941659A (en) * | 2008-03-25 | 2009-10-01 | Bridge Semiconductor Corp | Thermally enhanced package with embedded metal slug and patterned circuitry |
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2009
- 2009-12-31 CN CN200910312779A patent/CN102117801B/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091876B (en) * | 2014-07-29 | 2016-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Transparency carrier LED encapsulation structure |
| CN106090652A (en) * | 2016-08-10 | 2016-11-09 | 李铭钰 | High power lighting lamp |
| CN108767090A (en) * | 2018-06-15 | 2018-11-06 | 南通沃特光电科技有限公司 | A kind of light-emitting diode encapsulation structure and its manufacturing method |
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| Publication number | Publication date |
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| CN102117801B (en) | 2012-10-10 |
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