JP2005166775A - Light emitting diode module and its manufacturing method - Google Patents

Light emitting diode module and its manufacturing method Download PDF

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JP2005166775A
JP2005166775A JP2003401030A JP2003401030A JP2005166775A JP 2005166775 A JP2005166775 A JP 2005166775A JP 2003401030 A JP2003401030 A JP 2003401030A JP 2003401030 A JP2003401030 A JP 2003401030A JP 2005166775 A JP2005166775 A JP 2005166775A
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substrate
led
surface
metal heat
led package
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Takushi Noguchi
卓志 野口
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Osram-Melco Ltd
オスラム・メルコ株式会社
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Abstract

PROBLEM TO BE SOLVED: To provide a light emitting diode (hereinafter referred to an LED) module in which a temperature during LED package lighting can be lowered as compared with a conventional LED module with a metal heatsink plate.
SOLUTION: The light emitting diode module includes a substrate 3 made of a resin or a resin containing a glass, an LED package 1 provided on the surface of the substrate 3, and the metal heatsink plate 2 provided on the rear surface of the substrate 3 and having a protruding part 2a brought into contact with the surface of the LED package 1.
COPYRIGHT: (C)2005,JPO&NCIPI

Description

この発明は、照明等に利用する発光ダイオードを複数個基板上に設けた発光ダイオード(以下、LED)モジュール及びLEDモジュールの製造方法に関するものである。 The present invention, light emitting diode having a light emitting diode to be used for illumination or the like on the plurality substrate (hereinafter, LED) a process for producing the module and the LED module.

図7は従来のLEDモジュールを示す図である。 Figure 7 is a diagram illustrating a conventional LED module. 図において、LEDモジュールは、紙フェノール製の基板3の表面にLEDパッケージ1を設け、基板3の裏面に金属放熱板2を設けている。 In Figure, LED module, the LED package 1 is provided on the surface of the substrate 3 made of paper phenol, a metal radiating plate 2 is provided on the back surface of the substrate 3.

図7に示すように、単純に基板3の裏面に金属放熱板2を取り付けるだけで、LEDモジュールの温度は約7℃減少し、光出力も約5%上昇する。 As shown in FIG. 7, by simply attaching a metal heat radiating plate 2 to the back surface of the substrate 3, the temperature of the LED module is reduced to about 7 ° C., it increases light output by about 5%.
特開2002−162626号公報 JP 2002-162626 JP

従来のLEDモジュールは、基板3の裏面に金属放熱板2を取り付けることで、LEDモジュールの温度が約7℃減少し、光出力も約5%上昇するが、現在のLEDモジュールは絶対光出力が少ないため、更なるLEDモジュールの温度対策が必要である。 Conventional LED module, by attaching the metal heat radiating plate 2 to the back surface of the substrate 3, the temperature of the LED module is reduced to about 7 ° C., rises from about 5% light output, the current of the LED module is absolute light output small therefore, it is necessary to temperature measures further LED module.

この発明は上記のような問題点を解決するためになされたもので、従来の金属放熱板付きのLEDモジュールよりも更にLEDパッケージの点灯中の温度が低減できる発光ダイオードモジュール及び発光ダイオードモジュールの製造方法を提供することを目的とする。 The present invention has been made to solve the above problem, the manufacture of light-emitting diode module and light emitting diode module temperature during lighting of the conventional further LED package than LED modules with a metal radiating plate can be reduced an object of the present invention to provide a method.

この発明に係る発光ダイオードモジュールは、樹脂もしくはガラスを含む樹脂製の基板と、基板の表面に設けられたLEDパッケージと、基板の裏面に設けられ、LEDパッケージ表面と接する突出部を有する金属放熱板と、を備えたことを特徴とする。 LED module according to the present invention comprises a substrate made of resin including a resin or glass, and LED package disposed on a surface of the substrate, provided on the back surface of the substrate, a metal heat dissipation plate having a projecting portion in contact with the LED package surface characterized by comprising a and.

また、この発明に係る発光ダイオードモジュールは、金属放熱板の突出部の断面形状を、LEDパッケージ表面と接する部分を根元より広くしたことを特徴とする。 Further, the light emitting diode module according to the invention, the cross-sectional shape of the protruding portion of the metal heat sink plate, characterized in that the portion in contact with the LED package surface is wider than the root.

また、この発明に係る発光ダイオードモジュールは、金属放熱板の突出部の断面形状を、テーパとしたことを特徴とする。 Further, the light emitting diode module according to the invention is characterized in that the cross-sectional shape of the protruding portion of the metal heat dissipating plate, and a taper.

また、この発明に係る発光ダイオードモジュールは、金属放熱板の突出部の断面形状を、T字状としたことを特徴とする。 Further, the light emitting diode module according to the invention is characterized in that the cross-sectional shape of the protruding portion of the metal heat sink is T-shaped.

この発明に係る発光ダイオードモジュールの製造方法は、樹脂もしくはガラスを含む樹脂製の基板と、基板の表面に設けられたLEDパッケージと、基板の裏面に設けられ、LEDパッケージ表面と接する突出部を有する金属放熱板と、を備えた発光ダイオードモジュールの製造方法において、金属放熱板と突出部とを分割して組み立てることを特徴とする。 Method of manufacturing a light-emitting diode module according to the present invention includes a substrate made of resin including a resin or glass, and LED package disposed on a surface of the substrate, provided on the back surface of the substrate, a protruding portion in contact with the LED package surface a metal radiating plate, in the method for manufacturing a light emitting diode module with, and wherein the assembled split and the protrusion metal heat dissipating plate.

また、この発明に係る発光ダイオードモジュールの製造方法は、樹脂もしくはガラスを含む樹脂製の基板と、基板の表面に設けられたLEDパッケージと、基板の裏面に設けられ、LEDパッケージ表面と接する突出部を有する金属放熱板と、を備えた発光ダイオードモジュールの製造方法において、基板に金属放熱板を圧入して組み立てることを特徴とする。 A method of manufacturing a light emitting diode module according to the present invention comprises a substrate made of resin including a resin or glass, and LED package disposed on a surface of the substrate, provided on the back surface of the substrate, the protruding portion in contact with the LED package surface the method of manufacturing a light emitting diode module with a metal heat dissipation plate having, characterized in that assembling by press-fitting a metal heat sink substrate.

この発明に係る発光ダイオードモジュールは、基板の裏面にLEDパッケージ表面と接する突出部を有する金属放熱板を備えたことにより、従来の金属放熱板付きのものよりLEDモジュール温度がさらに約4℃、光出力がさらに約5%向上した。 LED module according to the present invention is provided with the metal heat dissipation plate having a projecting portion in contact with the LED package surface to the back surface of the substrate, LED module temperature than with conventional metal heat dissipating plate is even about 4 ° C., light output is further increased by about 5%.

また、金属放熱板の突出部の断面形状を、LEDパッケージ表面と接する部分が根元より広くしたことにより、基板と金属放熱板の剥離がなくなった。 Further, the sectional shape of the protruding portion of the metal heat dissipating plate, a portion in contact with the LED package surface by the wider than the root, no longer peeled off the substrate and the metal heat dissipating plate.

この発明に係る発光ダイオードモジュールの製造方法は、金属放熱板と突出部とを分割して組み立てるので、生産性が向上する。 Method of manufacturing a light-emitting diode module according to the present invention, since the assembled split and the protrusion metal heat radiating plate, the productivity is improved.

また、この発明に係る発光ダイオードモジュールの製造方法は、基板に金属放熱板を圧入して組み立てるので、部品点数を低減できる。 A method of manufacturing a light emitting diode module according to the present invention, since the assembled by press-fitting the metal heat sink substrate, thereby reducing the number of parts.

実施の形態1. The first embodiment.
図1は実施の形態1を示す図で、LEDモジュールを示す図である。 Figure 1 is a diagram showing the first embodiment and is a diagram illustrating a LED module. 図において、LEDモジュールは、紙フェノール製の基板3の表面にLEDパッケージ1が設けられ、LEDパッケージ1はハンダ付け部分4により基板3に固定されている。 In Figure, LED modules, LED package 1 is provided on the surface of the substrate 3 made of paper phenol, LED package 1 is fixed to the substrate 3 by soldering portion 4. 基板3の裏面には、先端がLEDパッケージ1の表面に接する突出部2aを有する金属放熱板2が設けられている。 The back surface of the substrate 3, the metal heat dissipating plate 2 having a protruding portion 2a which tip is in contact with the surface of the LED package 1 is provided.

LEDパッケージ1の熱は、金属放熱板2に伝わり放熱されるが、金属放熱板2の突出部2aがLEDパッケージ1の表面に接しているので、放熱特性が向上する。 Heat LED package 1 is is radiated transferred to the metal heat radiating plate 2, since the projecting portion 2a of the metal heat dissipating plate 2 is in contact with the surface of the LED package 1, improved heat dissipation characteristics.

図2はLEDモジュール温度に対する光出力変化を示す図である。 Figure 2 is a diagram illustrating an optical output change with respect to the LED module temperature. 図に示すように、従来の金属放熱板付きのLEDモジュールは、金属放熱板なしのものに対し、LEDモジュール温度が約7℃低下し、光出力が約5%向上するが、本実施の形態のLEDモジュールは、従来の金属放熱板付きのLEDモジュールよりも、LEDモジュール温度が約4℃低下し、光出力が約5%向上する。 As shown in FIG, LED module with a conventional metal heat sink, to one without the metal radiator plate, LED module temperature decreases about 7 ° C., the light output is improved by about 5%, this embodiment LED modules than conventional LED module with metal heat dissipation plate, the LED module temperature decreases about 4 ° C., the light output is improved about 5%.

基板3は、紙フェノール以外に、ガラスエポキシ、ポリイミド等を用いることができる。 Substrate 3, in addition to paper phenol may be a glass epoxy, a polyimide or the like.

実施の形態2. The second embodiment.
図3は実施の形態2を示す図で、LEDモジュールを示す図である。 Figure 3 is a diagram showing a second embodiment, a diagram illustrating a LED module. 図に示すように、金属放熱板2の突出部2aの断面形状を、LEDパッケージ1表面と接する部分の寸法Aが、根元の寸法Bより大きいテーパとした。 As shown, the cross-sectional shape of the protruding portion 2a of the metal heat dissipating plate 2, dimension A of the portion in contact with the LED package 1 surface was the root of the dimension B is greater than the taper.

それにより、紙フェノール製の基板3と金属放熱板2との剥離が少なくなった。 Thus, separation between the substrate 3 and the metal heat radiating plate 2 made of paper phenol is low.

実施の形態3. Embodiment 3.
図4は実施の形態3を示す図で、LEDモジュールを示す図である。 Figure 4 is a diagram showing a third embodiment illustrates an LED module. 図に示すように、金属放熱板2の突出部2aの断面形状を、LEDパッケージ1表面と接する部分の寸法Aが、根元の寸法Bより大きいT字状とした。 As shown, the cross-sectional shape of the protruding portion 2a of the metal heat dissipating plate 2, dimension A of the portion in contact with the LED package 1 surface was the root of the dimension B is greater than T-shaped.

実施の形態2と同様、それにより紙フェノール製の基板3と金属放熱板2との剥離が少なくなった。 As in the second embodiment, whereby separation between the substrate 3 and the metal heat radiating plate 2 made of paper phenol is low.

実施の形態4. Embodiment 4.
図5は実施の形態4を示す図で、LEDモジュールの製造方法を示す図である。 Figure 5 is a diagram showing a fourth embodiment, a diagram showing a manufacturing method of the LED module. 図に示すように、金属放熱板2の突出部2aを分割し、接着等により組み立てる。 As shown, the protruding portion 2a of the metal heat radiating plate 2 is divided, assembled by bonding or the like. これにより、金属放熱板2の突出部2aの断面形状が、LEDパッケージ1表面と接する部分が、根元より広いものでも容易に組み立てることができる。 Thus, the cross-sectional shape of the projecting portion 2a of the metal heat sink plate 2, a portion in contact with the LED package 1 surface, can be assembled also easily but wider than the root. 尚、金属放熱板2と突出部2aとは接着以外の方法で固定してもよい。 It may be fixed by a method other than adhesion between the protruding portion 2a metal heat dissipating plate 2.

実施の形態5. Embodiment 5.
図6は実施の形態5を示す図で、LEDモジュールの製造方法を示す図である。 Figure 6 is a diagram showing a fifth embodiment, a diagram showing a manufacturing method of the LED module. 図に示すように、突出部2aが一体の金属放熱板2を、樹脂もしくはガラスを含む樹脂製の基板3の弾性を利用して圧入により組み立ててもよい。 As shown, a metal heat dissipating plate 2 of the projecting portion 2a is integrally be assembled by press-fitting by utilizing the elasticity of the substrate 3 made of resin including a resin or glass. これにより、部品点数を低減できる。 As a result, it is possible to reduce the number of parts.

実施の形態1を示す図で、LEDモジュールを示す図である。 A diagram showing a first embodiment and is a diagram illustrating a LED module. 実施の形態1を示す図で、LEDモジュール温度に対する光出力変化を示す図である。 A diagram showing a first embodiment and is a diagram showing an optical output change with respect to the LED module temperature. 実施の形態2を示す図で、LEDモジュールを示す図である。 A diagram showing a second embodiment, a diagram illustrating a LED module. 実施の形態3を示す図で、LEDモジュールを示す図である。 A diagram showing a third embodiment illustrates an LED module. 実施の形態4を示す図で、LEDモジュールの製造方法を示す図である。 A diagram showing a fourth embodiment, a diagram showing a manufacturing method of the LED module. 実施の形態5を示す図で、LEDモジュールの製造方法を示す図である。 A diagram showing a fifth embodiment, a diagram showing a manufacturing method of the LED module. 従来のLEDモジュールを示す図である。 It is a diagram illustrating a conventional LED module.

符号の説明 DESCRIPTION OF SYMBOLS

1 LEDパッケージ、2 金属放熱板、2a 突出部、3 基板、4 ハンダ付け部分。 1 LED package, 2 metal heat dissipating plate, 2a protrusions 3 substrate, 4 solder joints.

Claims (6)

  1. 樹脂もしくはガラスを含む樹脂製の基板と、 A substrate made of a resin containing a resin or glass,
    前記基板の表面に設けられた発光ダイオード(以下、LED)パッケージと、 Light emitting diode (hereinafter, LED) provided on the surface of the substrate and package,
    前記基板の裏面に設けられ、前記LEDパッケージ表面と接する突出部を有する金属放熱板と、 Provided on the back surface of the substrate, a metal heat dissipation plate having a projecting portion in contact with the LED package surface,
    を備えたことを特徴とする発光ダイオードモジュール。 LED module, characterized in that it comprises a.
  2. 前記金属放熱板の突出部の断面形状を、前記LEDパッケージ表面と接する部分を根元より広くしたことを特徴とする請求項1記載の発光ダイオードモジュール。 LED module according to claim 1, wherein the cross-sectional shape of the protruding portion of the metal heat dissipating plate, and the portion in contact with the LED package surface wider than the root.
  3. 前記金属放熱板の突出部の断面形状を、テーパとしたことを特徴とする請求項2記載の発光ダイオードモジュール。 LED module according to claim 2, characterized in that the cross-sectional shape of the protruding portion of the metal heat dissipating plate, and a taper.
  4. 前記金属放熱板の突出部の断面形状を、T字状としたことを特徴とする請求項2記載の発光ダイオードモジュール。 LED module according to claim 2, characterized in that the cross-sectional shape of the protruding portion of the metal heat sink is T-shaped.
  5. 樹脂もしくはガラスを含む樹脂製の基板と、前記基板の表面に設けられたLEDパッケージと、前記基板の裏面に設けられ、前記LEDパッケージ表面と接する突出部を有する金属放熱板と、を備えた発光ダイオードモジュールの製造方法において、 A substrate made of resin including a resin or glass, and LED package disposed on a surface of the substrate, provided on a back surface of the substrate, light emission and a metal heat dissipation plate having a projecting portion in contact with the LED package surface the method of manufacturing a diode module,
    前記金属放熱板と前記突出部とを分割して組み立てることを特徴とする発光ダイオードモジュールの製造方法。 Method of manufacturing a light-emitting diode module, wherein the assembled by dividing said protruding portion and said metal radiating plate.
  6. 樹脂もしくはガラスを含む樹脂製の基板と、前記基板の表面に設けられたLEDパッケージと、前記基板の裏面に設けられ、前記LEDパッケージ表面と接する突出部を有する金属放熱板と、を備えた発光ダイオードモジュールの製造方法において、 A substrate made of resin including a resin or glass, and LED package disposed on a surface of the substrate, provided on a back surface of the substrate, light emission and a metal heat dissipation plate having a projecting portion in contact with the LED package surface the method of manufacturing a diode module,
    前記基板に前記金属放熱板を圧入して組み立てることを特徴とする発光ダイオードモジュールの製造方法。 Method of manufacturing a light-emitting diode module, wherein the assembling by press-fitting the metal heat radiating plate to said substrate.
JP2003401030A 2003-12-01 2003-12-01 Light emitting diode module and its manufacturing method Pending JP2005166775A (en)

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US8172434B1 (en) 2007-02-23 2012-05-08 DeepSea Power and Light, Inc. Submersible multi-color LED illumination system
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100665117B1 (en) 2005-02-17 2007-01-09 삼성전기주식회사 Led housing and fabrication method thereof
US8172434B1 (en) 2007-02-23 2012-05-08 DeepSea Power and Light, Inc. Submersible multi-color LED illumination system
US8076182B2 (en) 2008-03-25 2011-12-13 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader and a cavity over the post
US9018667B2 (en) 2008-03-25 2015-04-28 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and dual adhesives
US7939375B2 (en) 2008-03-25 2011-05-10 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader and a cavity in the post
US7948076B2 (en) 2008-03-25 2011-05-24 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and vertical signal routing
US7951622B2 (en) 2008-03-25 2011-05-31 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader and a signal post
US7901993B2 (en) 2008-03-25 2011-03-08 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with an aluminum post/base heat spreader and a silver/copper conductive trace
US8003415B2 (en) 2008-03-25 2011-08-23 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader and vertical signal routing
US8003416B2 (en) 2008-03-25 2011-08-23 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader and dual adhesives
US8034645B2 (en) 2008-03-25 2011-10-11 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a copper/aluminum post/base heat spreader
US8062912B2 (en) 2008-03-25 2011-11-22 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader and horizontal signal routing
US8067270B2 (en) 2008-03-25 2011-11-29 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader and a substrate
US8067784B2 (en) 2008-03-25 2011-11-29 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and substrate
US8535985B2 (en) 2008-03-25 2013-09-17 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a bump/base heat spreader and an inverted cavity in the bump
US8110446B2 (en) 2008-03-25 2012-02-07 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader and a conductive trace
US8129742B2 (en) 2008-03-25 2012-03-06 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and plated through-hole
US8148747B2 (en) 2008-03-25 2012-04-03 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base/cap heat spreader
US8148207B2 (en) 2008-03-25 2012-04-03 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base/cap heat spreader
US8153477B2 (en) 2008-03-25 2012-04-10 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/dielectric/post heat spreader
US8163603B2 (en) 2008-03-25 2012-04-24 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader and a substrate using grinding
US20100072510A1 (en) * 2008-03-25 2010-03-25 Lin Charles W C Semiconductor chip assembly with post/base/cap heat spreader
US8178395B2 (en) 2008-03-25 2012-05-15 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader with a thermal via
US8193556B2 (en) 2008-03-25 2012-06-05 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and cavity in post
US8203167B2 (en) 2008-03-25 2012-06-19 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and adhesive between base and terminal
US8207019B2 (en) 2008-03-25 2012-06-26 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base/post heat spreader and asymmetric posts
US8207553B2 (en) 2008-03-25 2012-06-26 Bridge Semiconductor Corporation Semiconductor chip assembly with base heat spreader and cavity in base
US8212279B2 (en) 2008-03-25 2012-07-03 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader, signal post and cavity
US8531024B2 (en) 2008-03-25 2013-09-10 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and multilevel conductive trace
US8525214B2 (en) 2008-03-25 2013-09-03 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader with thermal via
US8329510B2 (en) 2008-03-25 2012-12-11 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader with an ESD protection layer
US8232576B1 (en) 2008-03-25 2012-07-31 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and ceramic block in post
US8232573B2 (en) 2008-03-25 2012-07-31 Bridge Semiconductor Corporation Semiconductor chip assembly with aluminum post/base heat spreader and silver/copper conductive trace
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US8241962B2 (en) 2008-03-25 2012-08-14 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader, a signal post and a cavity
US8269336B2 (en) 2008-03-25 2012-09-18 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and signal post
US8283211B2 (en) 2008-03-25 2012-10-09 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a bump/base heat spreader and a dual-angle cavity in the bump
US8415703B2 (en) 2008-03-25 2013-04-09 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base/flange heat spreader and cavity in flange
US8288792B2 (en) 2008-03-25 2012-10-16 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base/post heat spreader
US8298868B2 (en) 2008-03-25 2012-10-30 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader and a plated through-hole
US8378372B2 (en) 2008-03-25 2013-02-19 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and horizontal signal routing
US8310043B2 (en) 2008-03-25 2012-11-13 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader with ESD protection layer
US8314438B2 (en) 2008-03-25 2012-11-20 Bridge Semiconductor Corporation Semiconductor chip assembly with bump/base heat spreader and cavity in bump
US8324723B2 (en) 2008-03-25 2012-12-04 Bridge Semiconductor Corporation Semiconductor chip assembly with bump/base heat spreader and dual-angle cavity in bump
US8354283B2 (en) 2008-03-25 2013-01-15 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a bump/base/ledge heat spreader, dual adhesives and a cavity in the bump
US8227270B2 (en) 2008-03-25 2012-07-24 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader and an adhesive between the base and a terminal
US8354688B2 (en) 2008-03-25 2013-01-15 Bridge Semiconductor Corporation Semiconductor chip assembly with bump/base/ledge heat spreader, dual adhesives and cavity in bump
TWI425684B (en) * 2009-04-23 2014-02-01
US8324653B1 (en) 2009-08-06 2012-12-04 Bridge Semiconductor Corporation Semiconductor chip assembly with ceramic/metal substrate
US8304292B1 (en) 2009-08-06 2012-11-06 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a ceramic/metal substrate
US9029814B2 (en) 2009-10-15 2015-05-12 Hamamatsu Photonics K.K. LED light source device
CN102596529B (en) * 2009-10-15 2014-11-12 浜松光子学株式会社 Led light source apparatus
CN102596529A (en) * 2009-10-15 2012-07-18 浜松光子学株式会社 Led light source apparatus
WO2011045968A1 (en) * 2009-10-15 2011-04-21 浜松ホトニクス株式会社 Led light source device
JP5373920B2 (en) * 2009-10-15 2013-12-18 浜松ホトニクス株式会社 LED light source device
CN104319334A (en) * 2009-10-15 2015-01-28 浜松光子学株式会社 Led light source apparatus
CN102130084A (en) * 2009-12-19 2011-07-20 钰桥半导体股份有限公司 Semiconductor chip assembly with a post/base heat spreader and a signal post
CN102117801B (en) 2009-12-31 2012-10-10 钰桥半导体股份有限公司 Manufacturing method of high-power light-emitting diode module structure
CN102548191A (en) * 2010-12-14 2012-07-04 欣兴电子股份有限公司 Wiring board and its manufacturing method

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