CN102110647A - 应力记忆技术的优化刻蚀方法 - Google Patents
应力记忆技术的优化刻蚀方法 Download PDFInfo
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- CN102110647A CN102110647A CN2009102009847A CN200910200984A CN102110647A CN 102110647 A CN102110647 A CN 102110647A CN 2009102009847 A CN2009102009847 A CN 2009102009847A CN 200910200984 A CN200910200984 A CN 200910200984A CN 102110647 A CN102110647 A CN 102110647A
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- etching
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- semiconductor substrate
- memory technique
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Priority Applications (1)
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CN 200910200984 CN102110647B (zh) | 2009-12-23 | 2009-12-23 | 应力记忆技术的优化刻蚀方法 |
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CN 200910200984 CN102110647B (zh) | 2009-12-23 | 2009-12-23 | 应力记忆技术的优化刻蚀方法 |
Publications (2)
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CN102110647A true CN102110647A (zh) | 2011-06-29 |
CN102110647B CN102110647B (zh) | 2013-09-18 |
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CN 200910200984 Expired - Fee Related CN102110647B (zh) | 2009-12-23 | 2009-12-23 | 应力记忆技术的优化刻蚀方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1770425A (zh) * | 2004-11-05 | 2006-05-10 | 台湾积体电路制造股份有限公司 | 半导体元件及其制造方法 |
CN101110360A (zh) * | 2006-07-19 | 2008-01-23 | 应用材料公司 | 蚀刻高k电解质材料的方法 |
CN101393894A (zh) * | 2007-09-20 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
WO2009123038A1 (ja) * | 2008-03-31 | 2009-10-08 | 日本ゼオン株式会社 | プラズマエッチング方法 |
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- 2009-12-23 CN CN 200910200984 patent/CN102110647B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1770425A (zh) * | 2004-11-05 | 2006-05-10 | 台湾积体电路制造股份有限公司 | 半导体元件及其制造方法 |
CN101110360A (zh) * | 2006-07-19 | 2008-01-23 | 应用材料公司 | 蚀刻高k电解质材料的方法 |
CN101393894A (zh) * | 2007-09-20 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
WO2009123038A1 (ja) * | 2008-03-31 | 2009-10-08 | 日本ゼオン株式会社 | プラズマエッチング方法 |
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CN102110647B (zh) | 2013-09-18 |
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C06 | Publication | ||
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ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121116 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20121116 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130918 Termination date: 20191223 |