CN102110629B - Electrostatic clamping device, the method reducing residual charge and apparatus for processing plasma - Google Patents
Electrostatic clamping device, the method reducing residual charge and apparatus for processing plasma Download PDFInfo
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- CN102110629B CN102110629B CN200910243700.2A CN200910243700A CN102110629B CN 102110629 B CN102110629 B CN 102110629B CN 200910243700 A CN200910243700 A CN 200910243700A CN 102110629 B CN102110629 B CN 102110629B
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Abstract
The invention provides a kind of electrostatic clamping device, comprise pedestal, lift unit, electric charge releasing unit, the electrode being placed in base interior and electrostatic attraction monitoring means and control unit, wherein, whether electrostatic attraction monitoring means moves to a desirable height for monitoring described workpiece under the promotion of described lift unit, and corresponding monitor signal is transferred to control unit; Control unit judges based on monitor signal whether electrostatic attraction is greater than predetermined threshold, if so, then starts described electric charge releasing unit; If not, then enter and get sheet process; The residual charge of electric charge releasing unit on release electrostatic clamping device.In addition, the present invention also provide a kind of reduce electrostatic clamping device residual charge method and the apparatus for processing plasma of application said apparatus and/or method.Electrostatic clamping device provided by the present invention, method and apparatus for processing plasma can reduce the electrostatic attraction between electrostatic clamping device and workpiece, avoid workpiece to depart from or fragment, thus enhance productivity.
Description
Technical field
The invention belongs to field of semiconductor manufacture, be specifically related to a kind of electrostatic clamping device for holding workpiece and reduce the method for residual charge in electrostatic clamping device, the invention still further relates to the apparatus for processing plasma of the above-mentioned electrostatic clamping device of application and/or minimizing residual charge method.
Background technology
Along with the develop rapidly of integrated circuit, the competition of manufacturing between enterprise is more and more fierce, and therefore, each manufacturing enterprise all reduces production cost, enhances productivity, to improve its competitive advantage doing everything possible.
As everyone knows, the manufacture process of integrated circuit is a complex process, supermatic continuous productive process process.Wafer be placed on chuck carry out operation adding man-hour requirement, and if there is dislocation or mobile disseating and getting in sheet process in wafer, even there is fragment phenomenon, the interruption of whole production process will be caused, and then the impact efficiency of producing and product yield.Therefore, in the manufacture process of integrated circuit, need to avoid to occur the situation of wafer dislocation, mobile or fragment as far as possible.
For this reason, the electrostatic clamping device that people devise such as electrostatic chuck supports and fixed wafer.The structure of currently used electrostatic chuck as shown in Figure 1.In Fig. 1, electrostatic chuck comprises pedestal 1 and thimble 3, is provided with two electrodes in pedestal 1, and electrode is wrapped up by insulating barrier and is connected with the ESC power supply being arranged on pedestal outside.The center of pedestal 1 is provided with through hole, and thimble 3 can move up and down in described through hole.When disseating, thimble 3 moves upward and will be placed on wafer 2 jack-up at pedestal 1 top, so that this wafer 2 taken away by manipulator; When taking a seat, thimble 3 moves downward the top wafer 2 from manipulator being placed on pedestal 1.After machining process terminates, in order to avoid movement and the dislocation of wafer, need to reduce the electrostatic attraction between wafer and electrostatic chuck.The method of the reduction electrostatic attraction of usual employing is: utilize ESC power supply on electrode, apply the reverse voltage contrary with polarity of voltage during work, with in and the electrostatic charge that induces in technical process on wafer, thus reduce the electrostatic attraction between wafer 2 and pedestal 1.But said method is not owing to judging the size of electrostatic attraction between wafer 2 and pedestal 1, and therefore, disseating and getting sheet process after applying reverse voltage has blindness.When electrostatic attraction between wafer 2 and pedestal 1 is larger, wafer still can depart from or fall sheet, and, also can there is fragment phenomenon when electrostatic attraction is larger, cause the interruption of technical process, affect production efficiency and product yield.
For this reason, technical staff develops a kind of electrostatic chuck with electric discharge probe, as shown in Figure 2, this electrostatic chuck is that the centre position of the thimble 3 of electrostatic chuck shown in above-mentioned Fig. 1 arranges electric discharge probe 4, one end of electric discharge probe 4 is connected with elastic damping 5, and elastic damping 5 is by wire and switch 6 ground connection.Elastic damping 5 is fixed on sleeve 7, and sleeve 7 is fixed on the thimble disk bottom thimble 3.Therefore, electric discharge probe 4 is fixed on the middle part of thimble 3, and can move up and down relative to thimble 3.When elastic damping 5 is in relaxed state, the top of electric discharge probe 4 is higher than the top of thimble 3.When falling needle-like state, the most significant end of electric discharge probe 4 is lower than the upper surface of pedestal 1.
The process that the above-mentioned electrostatic chuck with electric discharge probe reduces electrostatic attraction is as follows: after processing technology completes, first utilize ESC power supply to apply reverse voltage on electrode; Then, Closing Switch 6, and make thimble 3 start to move upward and realize rising pin, rising in pin process, electric discharge probe 4 takes the lead in contacting with wafer 2, and the electric charge on wafer 2 can be led away, along with the continuation rising pin process by means of the grounded circuit of electric discharge probe 4, elastic damping 5 and wire formation, elastic damping 5 is constantly compressed, until thimble 3 is with contact wafers and by its jack-up; Finally, with manipulator, wafer is taken away.
Although the above-mentioned electrostatic chuck provided in prior art can carry out the electrostatic charge on releasing wafer by means of electric discharge probe, but in actual application, this method inevitably exists following defect:
One, because above-mentioned electrostatic charge dispose procedure relies on electric discharge probe and wafer single-contact to discharge, therefore, electrostatic charge near contact point can only be discharged, and distance contact point compared with distant positions place electrostatic charge still not easily or can not discharge, this makes the electrostatic attraction between wafer and electrode still comparatively large and skewness.
They are two years old, in above-mentioned electrostatic charge method for releasing, although release electrostatic lotus can be carried out by means of the electric discharge probe contacted with wafer, but whole disseat so that get cannot know electrostatic charge in sheet process all the time releasing degree (namely, the electrostatic charge that cannot know between wafer and electrode whether discharge completely or be discharged into can security implementation get the degree of sheet operation), in this case, often there is such problem: namely, when in wafer disseats process, thimble has touched wafer lower surface, electrostatic attraction between wafer and electrode likely can be still larger, now, if continue enforcement to disseat process because of the size situation cannot knowing this electrostatic attraction, then may occur that thimble can not jack-up wafer be (namely completely because the electrostatic attraction between wafer and electrode is comparatively large, there is bonding die problem) situation, thus cause wafer occur skew or fall the problems such as sheet, cause manipulator can not take wafer away smoothly, and then affect next process.More seriously, if make thimble apply larger motive force to wafer as the electrostatic attraction that overcomes between wafer and electrode, this can make again wafer be easy under the effect of larger electrostatic attraction and motive force broken (namely, produce fragment problems), pollute whole chamber, and affect product yield and production efficiency.
Summary of the invention
For solving the problem, the invention provides a kind of electrostatic clamping device, it can judge the electrostatic attraction situation between electrostatic clamping device and workpiece in advance before getting sheet operation, and determining to implement again to get sheet operation after electrostatic attraction is less than predetermined threshold, thus minimizing even avoids workpiece to depart from or the phenomenon of fragment, and then improve product yield and production efficiency.
For solving the problem, the present invention also provides a kind of method reducing electrostatic clamping device residual charge, it is monitored the electrostatic attraction between electrostatic clamping device and workpiece, and the residual charge discharged when electrostatic attraction is greater than predetermined threshold in described electrostatic clamping device, electrostatic clamping device is decreased to desired value with the electrostatic attraction between the workpiece clamped by it, thus minimizing even avoids workpiece to depart from subsequent handling or the phenomenon of fragment, and then improve product yield and production efficiency.
For solving the problem, the present invention also provides a kind of apparatus for processing plasma applying the method for above-mentioned electrostatic clamping device and/or minimizing electrostatic clamping device residual charge, and it can reduce equally even avoids workpiece to depart from or fragment phenomenon.
For this reason, the invention provides a kind of electrostatic clamping device, comprise pedestal, lift unit, electric charge releasing unit and be placed in the electrode of base interior.This electrostatic clamping device also comprises electrostatic attraction monitoring means and control unit, wherein, whether electrostatic attraction monitoring means moves to a desirable height for monitoring described workpiece under the promotion of described lift unit, and corresponding monitor signal is transferred to control unit; Control unit judges based on monitor signal whether electrostatic attraction is greater than predetermined threshold, if so, then starts electric charge releasing unit; If not, then enter and get sheet process; The residual charge of electric charge releasing unit under the control of the control unit on release electrostatic clamping device, to reduce electrostatic clamping device with the electrostatic attraction between the workpiece clamped by it; Lift unit implements lift operation to the workpiece be placed in electrostatic clamping device under the control of the control unit.
Wherein, electrostatic attraction monitoring means comprises primary importance transducer, primary importance sensor setting is on the operating path of lift unit and correspond to desirable height of workpiece, whether under the promotion of lift unit, move to desirable height in order to monitoring workpiece, and corresponding monitor signal is sent to control unit.
Wherein, electrostatic attraction monitoring means also comprises second place transducer, the original position of second place sensor setting on the operating path of lift unit and when moving upward corresponding to lift unit.
Wherein, electrostatic attraction monitoring means comprises the displacement transducer be arranged on lift unit operating path, whether under the promotion of lift unit, moves to desirable height, and corresponding monitor signal is sent to control unit in order to monitoring workpiece.
Wherein, electric charge releasing unit comprises the power supply for release electrostatic lotus, with under the control of the control unit to electrode apply with electrostatic clamping device on the opposite polarity voltage of residual charge, with in and residual charge.
Wherein, described desirable height is for exceeding the height of described pedestal upper surface 4 ~ 10mm.
In addition, the present invention also provides a kind of method reducing electrostatic clamping device residual charge, for electrostatic clamping device being decreased to desired value with the electrostatic attraction between the workpiece clamped by it in plasma process.The method comprises the following steps: 10) monitor described workpiece and whether be lifted to described desirable height, if not, then judge that described electrostatic attraction is greater than predetermined threshold, and forward step 20 to); If so, then judge that described electrostatic attraction is less than predetermined threshold, and method ends; 20) residual charge on release electrostatic clamping device, to reduce electrostatic clamping device with the electrostatic attraction between the workpiece clamped by it; Repeat above-mentioned steps 10) to step 20), until electrostatic clamping device is less than predetermined threshold with the electrostatic attraction between the workpiece clamped by it.
Wherein, predetermined threshold to correspond to when workpiece being upwards successfully lifted to desirable height with the motive force of 5 ~ 15N electrostatic clamping device with the electrostatic attraction value between the workpiece clamped by it.
Wherein, in step 10) in, whether be lifted to desirable height by means of position transducer monitoring workpiece, if so, then judged that electrostatic attraction is less than predetermined threshold; If not, then judge that electrostatic attraction is greater than predetermined threshold, wherein, the operating path that position transducer is arranged on lift unit corresponds to desirable height of workpiece.
Wherein, in step 10) in, whether be lifted to desirable height by means of displacement transducer monitoring workpiece, if so, then judged that electrostatic attraction is less than predetermined threshold; If not, then judge that electrostatic attraction is greater than predetermined threshold, wherein, displacement transducer is arranged on the operating path of lift unit.
Wherein, described desirable height is for exceeding the height of described pedestal upper surface 4 ~ 10mm.
Wherein, in step 10) before also comprise such step: namely, after processing technology completes, the reverse voltage contrary with the polarity of voltage applied in machining process is applied to electrode, with in and the electric charge that produces in technical process of electrode and workpiece.
In addition, the present invention also provides a kind of apparatus for processing plasma, comprises processing chamber, is provided with the electrostatic clamping device that the invention described above provides in processing chamber, departs from and fragment phenomenon disseating and get in sheet process to avoid workpiece.
In addition, the present invention also provides a kind of apparatus for processing plasma, comprise processing chamber and put electrostatic clamping device in the inner, and apply the method for the minimizing electrostatic clamping device residual charge that the invention described above provides, depart from and fragment phenomenon disseating and get in sheet process to avoid workpiece.
The present invention has following beneficial effect:
Electrostatic clamping device provided by the invention is provided with electrostatic attraction monitoring means and control unit.Before workpiece being implemented to get sheet operation, by electrostatic attraction monitoring means, the electrostatic attraction situation between electrostatic clamping device and workpiece is monitored, then judged by the size of control unit to electrostatic attraction, and indicate when electrostatic attraction is greater than predetermined threshold electric charge releasing unit to perform the operation eliminating electrostatic charge; And when electrostatic attraction is less than or equal to predetermined threshold, instruction can be implemented to get sheet operation.Therefore, (namely electrostatic attraction between electrostatic clamping device and workpiece can be decreased to desired value by electrostatic clamping device provided by the present invention before getting sheet, lower than predetermined threshold), thus minimizing even avoids workpiece to depart from subsequent handling or the phenomenon of fragment, and then improve product yield; Meanwhile, effectively ensure that and follow-uply get carrying out smoothly of sheet and even whole technological process, thus improve production efficiency.
The method of minimizing electrostatic clamping device residual charge provided by the invention, can monitor and judge that electrostatic clamping device is with the electrostatic attraction situation between the workpiece clamped by it, the step of residual charge will taked further on release electrostatic clamping device when judging that electrostatic attraction is excessive, until above-mentioned electrostatic attraction is decreased to desired value, thus minimizing even avoids workpiece to depart from subsequent handling or the phenomenon of fragment; Meanwhile, effectively ensure that and get carrying out smoothly of sheet and even whole technological process, thus improve production efficiency.
Similarly, owing to applying the method for above-mentioned electrostatic clamping device provided by the invention and/or minimizing electrostatic clamping device residual charge in apparatus for processing plasma provided by the invention, thus, it can reduce equally and even avoids workpiece to depart from subsequent handling or the phenomenon of fragment; Meanwhile, effectively ensure that and get carrying out smoothly of sheet and even whole technological process, thus improve production efficiency.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of common electrostatic chuck;
Fig. 2 is the structural representation of another kind of common electrostatic chuck;
Fig. 3 is the structural representation of a kind of embodiment of electrostatic clamping device provided by the invention;
Fig. 4 is the structural representation of the another kind of embodiment of electrostatic clamping device provided by the invention; And
Fig. 5 is the method flow diagram of minimizing residual charge provided by the invention.
In figure: 1-pedestal 2-wafer 3-thimble 4-electric discharge probe 5-elastic damping 6-switch 7-sleeve 101-wafer 102-pedestal 103-thimble 103a-thimble disk 104-primary importance transducer 105-second place transducer 106-electrode 107-cylinder 108-displacement transducer
Embodiment
For making those skilled in the art person understand technical scheme of the present invention better, below in conjunction with accompanying drawing, electrostatic clamping device provided by the present invention, the method for minimizing electrostatic clamping device residual charge and the apparatus for processing plasma of application said apparatus and/or method are described in detail.
Electrostatic clamping device provided by the invention, comprises pedestal, lift unit, electric charge releasing unit, the electrode being arranged at base interior and electrostatic attraction monitoring means and control unit.
Wherein, electrostatic attraction monitoring means can adopt position transducer or displacement transducer, it is arranged on the operating path of lift unit, for monitoring this electrostatic clamping device with the workpiece clamped by it (such as, wafer) between electrostatic attraction situation, and corresponding monitor signal is transferred to described control unit.
Based on described monitor signal, control unit judges whether electrostatic attraction is greater than predetermined threshold, if so, then start described electric charge releasing unit; If not, then enter and get sheet process.Described predetermined threshold correspond to described workpiece can by lift unit be successfully upwards lifted to desirable height time electrostatic clamping device with the electrostatic attraction value between the workpiece clamped by it.
Electric charge releasing unit comprises the power supply of release electrostatic lotus, this power supply applies and the opposite polarity voltage of residual charge in described electrostatic clamping device to described electrode under the control of the control unit, with in and described residual charge on electrode and wafer, to reduce electrostatic clamping device with the electrostatic attraction between the workpiece clamped by it.
Lift unit implements lift operation to the workpiece be placed in electrostatic clamping device under the control of described control unit.In the middle of practical application, lift unit can according to the size of actual conditions determination motive force, and this motive force should not be too large, also should not be too little.If motive force is too little, then workpiece can not be pushed away pedestal and complete de-chucking operation or cause eliminating the time lengthening of residual charge; If motive force is too large, then workpiece can be caused to depart from or fragment.Usually above-mentioned motive force can be determined according to actual process situation, such as, this motive force 5 ~ 15N can be set as in actual applications.Certainly, in actual applications, the size of this motive force also can be not limited to 5 above-mentioned ~ 15N, but can determine according to actual conditions, as the situations such as the weight according to wafer size or thimble are determined.
In the present invention, so-called predetermined threshold refer to preset according to actual process workpiece upwards can be lifted to smoothly desirable height time electrostatic clamping device with the electrostatic attraction value between the workpiece clamped by it.What is called disseats and refers to the process of workpiece disengaging electrostatic clamping device; And so-called desirable highly refers to that workpiece has left electrostatic clamping device upper surface certain altitude and can have been got safely the height of sheet.
Referring to Fig. 3, is the structural representation of a kind of embodiment of electrostatic clamping device provided by the invention.This electrostatic clamping device comprises pedestal 102, thimble 103, electrode 106, primary importance transducer 104, second place transducer 105, controller and cylinder 107.Wherein, electrode 106 is arranged on pedestal 102 inside and the upper surface of close pedestal 102, and be connected with the power supply being arranged on pedestal 102 outside, electrode 106a is connect the positive pole of power supply, electrode 106b connects the negative pole of power supply, and wafer 101 is placed in the top of pedestal 102, like this, can produce electrostatic attraction between electrode 106 and wafer 101, wafer 101 is fixed on pedestal 102 under the effect of this electrostatic attraction.
The through hole as thimble 103 moving conduit is provided with in the middle part of pedestal 102, the bottom of thimble 103 is connected with cylinder 107 using the lifting power source as thimble 103, this cylinder 107 can promote to move up and down in the through hole of thimble 103 in the middle part of pedestal 102 under the control of the controller, completes to lift wafer 101 process of taking a seat and disseat.Be positioned at the thimble disk 103a position place when the top of thimble 103 exceeds the height of pedestal 102 upper surface 4 ~ 10mm in the through hole that primary importance transducer 104 is arranged on pedestal 102, thimble disk 103a position place in the through hole that second place transducer 105 is arranged on pedestal 102 and when being positioned at the height as the top 2 ~ 3mm lower than the upper surface of pedestal 102 of thimble 103, primary importance transducer 104, second place transducer 105 and cylinder 107 are all connected with controller.
In actual applications, primary importance transducer 104 also can be arranged on other position, thimble disk 103a position place when the top as thimble 103 exceeds the height of pedestal 102 upper surface 4 ~ 6mm.And, the setting position of primary importance transducer 104 and second place transducer 105 can not with thimble disk 103a for basic point, such as, also can a certain position in the middle part of thimble be basic point, like this, when this basic point in the middle part of thimble moves to primary importance, now the top of thimble 103 exceeds pedestal 102 upper surface 4 ~ 10mm just, then primary importance transducer 104 can be arranged on this; Similarly, when this basic point in the middle part of thimble moves to the second place, the now height of the top of thimble 103 2 ~ 3mm lower than the upper surface of pedestal 102 just, then second place transducer 105 can be arranged on this.
The process that disseats of the wafer 101 be placed on above-mentioned electrostatic clamping device is described below in detail.
First, after technical process completes, controller sends enabling signal to cylinder 107, cylinder 107 is started working, now, if second place transducer 105 does not send signal to controller, then show that cylinder 107 breaks down, controller sends signal out of service to cylinder 107, and stop process and cylinder 107 is overhauled; If second place transducer 105 sends signal to controller, then show that cylinder 107 is working properly, cylinder 107 continues to run.
Then, when thimble 103 be upwards lifted under the effect of cylinder 107 its top exceed pedestal 102 upper surface 4 ~ 10mm time, primary importance transducer 104 sends signal to controller, and controller sends signal out of service to cylinder 107, and waits for that manipulator is implemented to get sheet operation.If thimble 103 fails to make its distance from top pedestal 102 upper surface 4 ~ 10mm under the effect of cylinder 107, show that the electrostatic attraction between electrostatic clamping device and wafer 101 is comparatively large, need the residual charge on release electrostatic clamping device.
It is pointed out that and also said second position transducer 105 can be removed in actual applications, and only retain primary importance transducer 104, so also can complete the monitoring to electrostatic attraction and judgement.Just primary importance transducer 104 is only set, will lacks and detect the whether normal function of cylinder 107.
As a kind of modification of the present embodiment, primary importance transducer 104 and second place transducer 105 can replace with displacement transducer.As shown in Figure 4, displacement transducer 108 be arranged on pedestal 102 through hole in and be at least arranged on thimble disk 103a when thimble 103 runs to extreme higher position from original position the whole path of moving.In the present embodiment, displacement transducer 108 is arranged on lower area: in region when exceeding pedestal 102 upper surface 4 ~ 10mm lower than thimble disk 103a position to thimble 103 top during pedestal 102 upper surface 2 ~ 3mm from thimble 103 top between thimble disk 103a position, like this, the position residing for thimble 103 can be monitored at any time rising displacement transducer 108 in pin process, and send monitored positional information to controller, then by the motion state of controller control cylinder 107.Certainly, displacement transducer 108 also can arrange longer scope, as long as can position residing for Real-Time Monitoring thimble 103.
Similarly, in actual applications, the setting position of displacement transducer 108 can not with thimble disk 103a for basic point, such as, can a certain position in the middle part of thimble be also basic point
In actual applications, above-mentioned electrostatic clamping device can be that such as electrostatic chuck etc. utilizes electrostatic attraction to fix the device of workpiece.Power supply can be ESC power supply, and the model that cylinder 107 can adopt MKS company to produce is the cylinder of 625B.In fact, lifting power source also can adopt motor, hydraulic means or other have and drive the drive unit of function.
Known by foregoing description, owing to being provided with electrostatic attraction monitoring means and control unit in electrostatic clamping device.Disseat in process at workpiece, by electrostatic attraction monitoring means, the electrostatic attraction situation between electrostatic clamping device and workpiece is monitored; Meanwhile, control unit can when judging that electrostatic attraction is excessive, and instruction electric charge releasing unit performs the operation eliminating electrostatic charge; When judging that electrostatic attraction is eliminated or is down to after below threshold value, sheet operation is got in instruction execution.Therefore, electrostatic clamping device provided by the present invention can make workpiece fully discharge to reduce or eliminate the electrostatic attraction between workpiece and electrostatic clamping device getting in sheet process, thus effectively reduce or avoid workpiece to depart from or the problem of fragment, improve product yield; Meanwhile, effectively ensure that and get carrying out smoothly of sheet and even whole technological process, improve production efficiency.
In addition, the present invention also provides a kind of method reducing electrostatic clamping device residual charge.In the method, first electrostatic clamping device is monitored with the electrostatic attraction situation between the workpiece clamped by it, if described electrostatic attraction is greater than predetermined threshold, then discharge the residual charge in described electrostatic clamping device, to reduce electrostatic clamping device with the electrostatic attraction between the workpiece clamped by it; If described electrostatic attraction is less than predetermined threshold, then method ends.
Repeat the process of above-mentioned monitoring, judgement and release residual charge, until described electrostatic clamping device is less than predetermined threshold with the electrostatic attraction between the workpiece clamped by it.
In actual applications, the method can be applied to aforementioned electrostatic clamping device, the electrostatic attraction between electrostatic clamping device and wafer is decreased to predetermined threshold, is described in detail to this below in conjunction with Fig. 5.
First enter step 100, that is, after technical process completes, on electrode 106, apply the reverse voltage contrary with the polarity of voltage applied in technical process with ESC power supply.Such as, for electrode 106a connects the positive pole of power supply in technical process, 106b connects the negative pole of power supply; And now electrode 106a connects the negative pole of power supply, 106b connects the positive pole of power supply.In this step, the magnitude of voltage applied is 650V, and application time is 1s.
Step 200, judges whether the electrostatic attraction between electrostatic clamping device and workpiece is less than predetermined threshold value.Concrete, enabling signal can be sent to cylinder by controller, the motive force of 5 ~ 15N is applied upwards to elect wafer to thimble by cylinder, the present embodiment primary importance transducer monitors the electrostatic attraction situation between electrostatic clamping device and wafer as monitoring means, if primary importance transducer does not send the signal that thimble basic point moves to primary importance within the time of setting, then show that the electrostatic attraction between electrostatic clamping device and wafer is greater than predetermined threshold, now, controller controls thimble and bounces back to initial position, then performs step 300); If primary importance transducer have issued the signal that thimble basic point moves to primary importance within the time of setting, then show that the electrostatic attraction between electrostatic clamping device and wafer is less than or equal to predetermined threshold, namely, it is safe for now implementing to get the operations such as sheet, can reduce and even avoid occurring the phenomenons such as skew or fragment.
Step 300, by the residual charge on release electrostatic clamping device to the electrode applying in electrostatic clamping device and the voltage of residual charge opposite polarity, to reduce electrostatic clamping device with the electrostatic attraction between the wafer clamped by it.
Particularly, if the last voltage applied not only completely in and residual charge in electrostatic clamping device, and create again new residual charge (that is, crossing neutralization), then this polarity of voltage applied with last to execute alive polarity contrary.For above-mentioned bipolar electrode (electrode 106a and 106b), if last electrode 106a connects the positive pole of power supply, electrode 106b connects the negative pole of power supply, then this sub-electrode 106a connects the negative pole of power supply, and electrode 106b connects the positive pole of power supply; Vice versa.
Such as, time in processing with this situation, if the last voltage condition applied is: the negative pole that electrode 106a connects the positive pole of power supply, electrode 106b connects power supply, magnitude of voltage are 650V, application time is 1s, then this applies voltage like this: the positive pole that electrode 106a connects the negative pole of power supply, electrode 106b connects power supply, magnitude of voltage are 650V, application time is 2 ~ 3s (that is, this voltage application time is last 1 ~ 2 times).If during this voltage applied still caused and situation, then upper once time, make electrode 106a connects the positive pole of power supply, electrode 106b connects power supply negative pole, magnitude of voltage be 650V, application time is 4 ~ 6s.Circulation like this, until electrostatic attraction is less than the predetermined threshold got safely required by sheet.
If the last voltage applied fails the residual charge (that is, owing neutralization) completely and in electrostatic clamping device, then this polarity of voltage applied with last to execute alive polarity identical.For above-mentioned bipolar electrode (electrode 106a and 106b), if last electrode 106a connects the positive pole of power supply, electrode 106b connects the negative pole of power supply, then this sub-electrode 106a still connects the positive pole of power supply, and electrode 106b connects the negative pole of power supply; Vice versa.As in owing and the processing procedure of situation, be similar to the aforementioned mode crossing neutralization, do not repeat them here.
It is to be noted, in actual applications, in described step 200) before or also comprise such step afterwards: namely, judge that whether the lifting power source of such as cylinder etc. is working properly by second place transducer, particularly, apply motive force by lifting power source to thimble, if second place transducer have issued the signal that thimble basic point arrives the second place in setting-up time, then show that lifting power source is working properly; If second place transducer does not send the signal that thimble basic point arrives the second place in setting-up time, then show to break down in lifting power source, now can shut down and overhaul.Like this, can the fault in Timeliness coverage lifting power source by this step, avoid thinking that electrostatic attraction performs step 200 and step 300 too greatly and all the time by mistake because of its fault) operation, and forever cannot perform subsequent operations such as getting sheet, thus the efficiency that impact is produced.
It is pointed out that in the present embodiment further, predetermined threshold is the electrostatic attraction value that wafer is successfully lifted to when exceeding electrostatic clamping device upper surface 4 ~ 10mm between wafer and electrostatic clamping device under the motive force effect of 5 ~ 15N; Initial position is for thimble top is lower than the position residing for thimble during pedestal upper surface 2 ~ 3mm.Certainly, in actual applications, initial position also can be arranged on the lower position of thimble distance from top pedestal upper surface, but can increase the stroke of thimble lifting or retraction like this, thus causes the prolongation of thimble lifting or withdrawal duration, and then reduces production efficiency.
In addition, the present invention also provides a kind of apparatus for processing plasma, comprises processing chamber, is provided with the electrostatic clamping device that the invention described above provides in processing chamber, departs from and fragment phenomenon disseating and get in sheet process to avoid workpiece.
In addition, the present invention also provides a kind of apparatus for processing plasma, comprise processing chamber and put electrostatic clamping device in the inner, and apply the method for the minimizing electrostatic clamping device residual charge that the invention described above provides, depart from and fragment phenomenon disseating and get in sheet process to avoid workpiece.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (18)
1. an electrostatic clamping device, comprise pedestal, lift unit, electric charge releasing unit and be placed in the electrode of described base interior, it is characterized in that, this electrostatic clamping device also comprises electrostatic attraction monitoring means and control unit, wherein
Described electrostatic attraction monitoring means is used for monitoring workpiece and whether under the promotion of described lift unit, moves to a desirable height, and corresponding monitor signal is transferred to described control unit;
Based on described monitor signal, described control unit judges whether electrostatic attraction is greater than predetermined threshold, if so, then start described electric charge releasing unit; If not, then enter and get sheet process;
The residual charge of described electric charge releasing unit under the control of described control unit on release electrostatic clamping device, to reduce electrostatic clamping device with the electrostatic attraction between the workpiece clamped by it;
Described lift unit implements lift operation to the described workpiece be placed in electrostatic clamping device under the control of described control unit.
2. electrostatic clamping device according to claim 1, it is characterized in that, described predetermined threshold correspond to described workpiece can by described lift unit with the motive force of 5 ~ 15N be upwards successfully lifted to desirable height time electrostatic clamping device with the electrostatic attraction value between the workpiece clamped by it.
3. electrostatic clamping device according to claim 1, it is characterized in that, described electrostatic attraction monitoring means comprises primary importance transducer, described primary importance sensor setting is on the operating path of described lift unit and correspond to desirable height of described workpiece, whether under the promotion of described lift unit, move to described desirable height in order to monitor described workpiece, and corresponding monitor signal has been sent to described control unit.
4. electrostatic clamping device according to claim 3, is characterized in that, the position corresponding to chassis of described primary importance sensor setting lift unit when described workpiece arrives desirable height.
5. electrostatic clamping device according to claim 3, it is characterized in that, described electrostatic attraction monitoring means also comprises second place transducer, the original position of described second place sensor setting on the operating path of described lift unit and when moving upward corresponding to described lift unit.
6. electrostatic clamping device according to claim 5, is characterized in that, the original position that described lift unit moves upward corresponds to the position when top of described lift unit bounces back to 2 ~ 3mm lower than the upper surface of described pedestal downwards.
7. electrostatic clamping device according to claim 1, it is characterized in that, described electrostatic attraction monitoring means comprises the displacement transducer be arranged on lift unit operating path, whether under the promotion of described lift unit, move to a desirable height in order to monitor described workpiece, and corresponding monitor signal is sent to described control unit.
8. electrostatic clamping device according to claim 1, it is characterized in that, described electric charge releasing unit comprises the power supply for release electrostatic lotus, to apply and the opposite polarity voltage of residual charge in described electrostatic clamping device to described electrode, to neutralize described residual charge under the control of the control unit.
9. the electrostatic clamping device according to claim 2,3,4 or 7, is characterized in that, described desirable height is for exceeding the height of described pedestal upper surface 4 ~ 10mm.
10. one kind is reduced the method for electrostatic clamping device residual charge, for electrostatic clamping device is decreased to desired value with electrostatic 1 power between the workpiece clamped by it, described electrostatic clamping device comprises pedestal, lift unit, electric charge releasing unit and is placed in the electrode of described base interior, it is characterized in that, the method comprises the following steps:
10) monitor described workpiece and whether be lifted to desirable height, if not, then judge that described electrostatic attraction is greater than predetermined threshold, and forward step 20 to); If so, then judge that described electrostatic attraction is less than predetermined threshold, and method ends;
20) residual charge in described electrostatic clamping device is discharged, to reduce electrostatic clamping device with the electrostatic attraction between the workpiece clamped by it;
Repeat above-mentioned steps 10) to step 20), until described electrostatic clamping device is less than predetermined threshold with the electrostatic attraction between the workpiece clamped by it.
The method of 11. minimizing electrostatic clamping device residual charges according to claim 10, it is characterized in that, described predetermined threshold to correspond to when described workpiece being upwards successfully lifted to desirable height with the motive force of 5 ~ 15N electrostatic clamping device with the electrostatic attraction value between the workpiece clamped by it.
The method of 12. minimizing electrostatic clamping device residual charges according to claim 10, it is characterized in that, in described step 10) in, monitor described workpiece by means of position transducer and whether be lifted to described desirable height, if so, then judge that electrostatic attraction is less than described predetermined threshold; If not, then judge that electrostatic attraction is greater than described predetermined threshold, wherein, the operating path that described position transducer is arranged on described lift unit corresponds to desirable height of workpiece.
The method of 13. minimizing electrostatic clamping device residual charges according to claim 10, it is characterized in that, in described step 10) in, monitor described workpiece by means of displacement transducer and whether be lifted to described desirable height, if so, then judge that electrostatic attraction is less than described predetermined threshold; If not, then judge that electrostatic attraction is greater than described predetermined threshold, wherein, institute's displacement sensors is arranged on the operating path of described lift unit.
14. according to the method for the minimizing electrostatic clamping device residual charge in claim 11-13 described in any one, and it is characterized in that, described desirable height is for exceeding the height of described pedestal upper surface 4 ~ 10mm.
The method of 15. minimizing electrostatic clamping device residual charges according to claim 10, it is characterized in that, in described step 10) also comprise such step before: namely, after processing technology completes, the reverse voltage contrary with the polarity of voltage applied in machining process is applied to described electrode, to neutralize the electric charge that described electrode and workpiece produce in technical process.
The method of 16. minimizing electrostatic clamping device residual charges according to claim 10, it is characterized in that, in described step 20) in, by the residual charge discharged in this electrostatic clamping device to the opposite polarity voltage of electrostatic charge in described electrode applying and described electrostatic clamping device.
17. 1 kinds of apparatus for processing plasma, comprise processing chamber, it is characterized in that, in described processing chamber, be provided with the electrostatic clamping device as described in any one in as claim 1-9, depart from and fragment phenomenon disseating and get in sheet process to avoid workpiece.
18. 1 kinds of apparatus for processing plasma, comprise processing chamber and put electrostatic clamping device in the inner, it is characterized in that, described electrostatic clamping device adopts the method as the minimizing electrostatic clamping device residual charge in claim 10-16 as described in any one, departs from and fragment phenomenon disseating and get in sheet process to avoid workpiece.
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| CN104867858A (en) * | 2014-02-21 | 2015-08-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer lifting method |
| CN106571316A (en) * | 2015-10-09 | 2017-04-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer slice bonding processing method and apparatus thereof |
| CN106571317A (en) * | 2015-10-09 | 2017-04-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer bonding processing method and apparatus |
| CN107393856B (en) * | 2016-05-16 | 2021-08-13 | 北京北方华创微电子装备有限公司 | Lower electrode device, semiconductor processing equipment and residual charge releasing method |
| CN107452645B (en) * | 2016-05-31 | 2019-11-29 | 北京北方华创微电子装备有限公司 | Pallet levelling mechanism, reaction chamber and semiconductor processing equipment |
| CN107525953A (en) | 2017-09-25 | 2017-12-29 | 惠科股份有限公司 | Probe device |
| CN108962794B (en) * | 2018-07-20 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Needle lifting method and thimble lifting device applying same |
| CN114959600B (en) * | 2022-05-31 | 2023-08-18 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor process equipment |
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