CN106571316A - Wafer slice bonding processing method and apparatus thereof - Google Patents
Wafer slice bonding processing method and apparatus thereof Download PDFInfo
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- CN106571316A CN106571316A CN201510650673.6A CN201510650673A CN106571316A CN 106571316 A CN106571316 A CN 106571316A CN 201510650673 A CN201510650673 A CN 201510650673A CN 106571316 A CN106571316 A CN 106571316A
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- bonding die
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
Abstract
The invention provides a wafer slice bonding processing method and an apparatus thereof. The method comprises the following steps of after an alarm indication used for indicating current wafer slice bonding is casted and displayed, receiving a call instruction of a slice bonding processing program; according to the call instruction, calling the slice bonding processing program, and through the slice bonding processing program, separating a slice bonding wafer from a chuck; determining whether separation is successful; and if the separation is successful, automatically calling a wafer transmission program and transmitting the current wafer to the outside world from a technology cavity. Through the method and the apparatus of the invention, a user does not need to wait for professional personnel and semiconductor equipment does not generate resource wastes because of waiting.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of chip bonding die processing method and dress
Put.
Background technology
It is at present, main during dry etching that to be Electrostatic Absorption chuck using ESC carried out adsorbing chip
Technique.Based on the semiconductor etching process using ESC technologies, in technical process, theoretically make
Adsorb chip with the principle of Electrostatic Absorption.After technique terminates, by ESC back discharges it is adsorbed
Power reduces up to being zero, then by three pin jack-up chips, by manipulator chip is taken out, and chip is put back to
Film chamber.
But the environment, crystalline substance during implementing, during ESC back discharges, due to processing chamber
, often there are ESC electric discharges incomplete so that chip in the cause influences such as structure, the discharge time of piece
There is remaining absorption affinity between ESC, cause chip bonding die.It is brilliant for jack-up due to chip bonding die
Three pins of piece will be unable to successfully stretch out jack-up chip, and manipulator cannot get chip, and crystalline substance is most caused at last
Piece cannot normally take out.
At present when chip bonding die problem is processed, when occurring in bonding die problem, semiconductor equipment is thrown first
Go out bonding die warning, bonding die occur to point out technologist.After technologist notices that the bonding die is reported to the police, lead to
Know professional, by professional using the method for manual handle, rely on completely according to live bonding die situation
Experience, enables bonding die depart from ESC using corresponding processing method.Then, then by technologist's hand
It is dynamic that chip is spread out of into chamber, chip is sent to into box chamber.After current bonding die has been processed, technique people is needed
Member restarts process task carries out the technological operation of next chip.
It is existing this completely by the method for professional's manual handle bonding die, on the one hand, this process
Professional is needed to process waste of manpower resource.Another further aspect, reinforms when finding to dish out after bonding die is reported to the police
Professional reaches the spot to be needed to wait longer time, and semiconductor equipment is in the spare time during waiting
Configuration state, reduces the utilization rate of semiconductor equipment.Another aspect, due to existing this processing mode
Completely by virtue of experience determining processing mode, and error in judgement by virtue of experience can occur unavoidably completely, once
Error in judgement, the bonding die processing mode of selection is improper, it will the chip to etching causes damage.
The content of the invention
The invention provides a kind of chip bonding die treating method and apparatus, to solve at existing chip bonding die
Waste of manpower and semiconductor equipment resource that reason method is present, and to damaging the problem of chip.
In order to solve the above problems, the invention discloses a kind of chip bonding die processing method, including：Throwing
Go out and show for after the police instruction for indicating current wafer bonding die, reception to be called to bonding die processing routine
Instruction；Bonding die processing routine is called according to the call instruction, will be glued described by bonding die processing routine
Wafer departs from from chuck；Judge whether the disengaging is successful；If success, calls chip to pass automatically
Defeated program spreads out of the current wafer from processing chamber.
Preferably, it is described by bonding die processing routine by it is described bonding die chip is departed from from chuck the step of
Including：Determine the current wafer whether bonding die；When it is determined that result is to be, current wafer correspondence is judged
Technical recipe in whether include bonding die handling process item；If comprising science and engineering at bonding die in the technical recipe
Skill item, then call bonding die processing routine to process the current wafer.
Preferably, the bonding die handling process item includes：Radio-frequency power supply parameter, gaseous species parameter with
And at least one in gas flow parameter.
Preferably, the bonding die handling process item includes：Radio-frequency power supply parameter, gaseous species parameter and
Gas flow parameter；It is described by bonding die processing routine by the step for departing from bonding die chip from chuck
Suddenly include：The radio-frequency power supply parameter is called to carry out the bonding die chip by the bonding die processing routine
Static elimination is operated；The gaseous species parameter and gas flow are called by the bonding die processing routine
Parameter, gas injection in the chamber being located to the current wafer, to release the bonding die of the bonding die chip
State.
Preferably, it is described determine the current wafer whether bonding die the step of include：Judge the current crystalline substance
Whether piece is located in processing chamber；If so, then judge whether the current wafer is located on manipulator；If
The current wafer is not located on manipulator, then judge whether stretch for the thimble of current wafer described in jack-up
Go out；If the thimble is not extended out, it is determined that the current wafer is in bonding die state.
In order to solve the above problems, originally return and disclose a kind of chip bonding die processing meanss, including：Receive
Module, for after dishing out and showing for the police instruction for indicating current wafer bonding die, receiving to bonding die
The call instruction of processing routine；Calling module, for calling bonding die processing routine according to the call instruction；
Processing module, for being departed from bonding die chip from chuck by described by bonding die processing routine；Judge mould
Block, for judging whether the disengaging is successful；Transport module, if the judged result for judge module is
Success, then call chip transmission procedure to spread out of the current wafer from processing chamber automatically.
Preferably, the processing module includes：First processing module, for determining that the current wafer is
No bonding die；Second processing module, for when the determination result of the first processing module is to be, judging
Whether bonding die handling process item is included in the corresponding technical recipe of current wafer；3rd processing module, is used for
When in being the technical recipe in the judged result of the Second processing module comprising bonding die handling process item,
Bonding die processing routine is then called to process the current wafer.
Preferably, the bonding die handling process item includes：Radio-frequency power supply parameter, gaseous species parameter with
And at least one in gas flow parameter.
Preferably, the bonding die handling process item includes：Radio-frequency power supply parameter, gaseous species parameter and
Gas flow parameter；The processing module by bonding die processing routine by it is described by bonding die chip from chuck
During disengaging：The radio-frequency power supply parameter is called to carry out the bonding die chip by the bonding die processing routine
Static elimination is operated；Called according to the gaseous species parameter and gas stream by the bonding die processing routine
Amount parameter, gas injection in the chamber being located to the current wafer, to release the viscous of the bonding die chip
Piece state.
Preferably, the first processing module determine the current wafer whether bonding die when：Judge described working as
Whether front chip is located in processing chamber；If so, then judge whether the current wafer is located on manipulator；
If the current wafer is not located on manipulator, judge for current wafer described in jack-up thimble whether
Stretch out；If the thimble is not extended out, it is determined that the current wafer is in bonding die state.
Compared with prior art, the present invention has advantages below：
Chip bonding die processing scheme provided in an embodiment of the present invention, semiconductor equipment is it is determined that current wafer is viscous
After piece, police instruction of dishing out.Technologist, just can be by setting after police instruction is seen on control panel
The corresponding button put calls bonding die processing routine to automatically process process bonding die by semiconductor equipment.Also,
After it is determined that bonding die is eliminated, call corresponding program by current wafer from process cavity automatically by semiconductor equipment
Spread out of in room, whole bonding die is processed, the processing procedure of chip transmission is without the need for manually participating in.The present invention is carried
For chip bonding die processing scheme, on the one hand, due to without the need for manually participating in, therefore, compared to existing
Human resources can be saved for processing scheme.On the other hand, semiconductor equipment is it is determined that current wafer is viscous
After piece, police instruction of dishing out, technologist can call correspondingly journey after police instruction is seen, at once
Sequence control semiconductor equipment carries out bonding die process, without the need for notifying professional, more the time need not be spent to wait
The arrival of professional, semiconductor equipment is not in the wasting of resources caused because of wait.It can be seen that, this
The chip bonding die processing scheme that inventive embodiments are provided, can either save manpower and can save semiconductor again and set
Standby resource utilization.
Description of the drawings
The step of Fig. 1 is a kind of according to embodiments of the present invention one chip bonding die processing method flow chart；
The step of Fig. 2 is a kind of according to embodiments of the present invention two chip bonding die processing method flow chart；
Fig. 3 is to carry out being flowed the step of bonding die is processed using the chip bonding die processing method shown in embodiment two
Cheng Tu；
Fig. 4 is the particular flow sheet of Auto Processing；
Fig. 5 is a kind of structured flowchart of according to embodiments of the present invention three chip bonding die processing meanss；
Fig. 6 is a kind of structured flowchart of according to embodiments of the present invention four chip bonding die processing meanss.
Specific embodiment
It is understandable to enable the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings
The present invention is further detailed explanation with specific embodiment.
Embodiment one
With reference to Fig. 1, flow process the step of show a kind of chip bonding die processing method of the embodiment of the present invention one
Figure.
The chip bonding die processing method of the embodiment of the present invention is comprised the following steps：
Step S102：After dishing out and showing for the police instruction for indicating current wafer bonding die, receive
Call instruction to bonding die processing routine.
Wherein, police instruction is used to point out technologist currently to there occurs chip bonding die problem.For warning
Concrete manifestation form the present embodiment of instruction is not specifically limited, for example：Can by word, letter,
The arbitrary forms such as image are showing.
Technologist can be sent after police instruction is observed by the control panel on semiconductor equipment
Call the instruction of bonding die processing routine, semiconductor equipment to receive after call instruction, respond the call instruction.
Step S104：Bonding die processing routine is called according to call instruction, will be viscous by bonding die processing routine
Wafer departs from from chuck.
It should be noted that the concrete setting of bonding die processing routine can be by those skilled in the art according to reality
Border demand is configured, for example：A kind of method correspondence of process bonding die is only set in bonding die processing routine
Program, can be arranging various process corresponding programs of method for adhering piece in bonding die processing routine.
Step S106：Judge whether successful to depart from, if success, execution step S108, if unsuccessful,
Then perform setting operation.
After it is determined that bonding die processing routine is finished, then judge the chip of current bonding die whether with card
Disk detachment, if having disengaged from, it is determined that depart from successfully.
When judging, can pass through to judge whether stretch out for the thimble of jack-up current wafer；If thimble is
Stretch out, it is determined that current wafer has disengaged from successfully.
Wherein, setting operation could be arranged to send police instruction.
Step S108：If judged result is successfully, chip transmission procedure is called automatically by current wafer
Spread out of from processing chamber.
After it is determined that current wafer successfully departs from chuck, semiconductor equipment is called and call automatically chip to transmit
Program, by the sequence controlled machine hand chip is taken, and chip is spread out of from processing chamber puts back to film magazine
Chamber.
By chip bonding die processing method provided in an embodiment of the present invention, semiconductor equipment is it is determined that current brilliant
After piece bonding die, police instruction of dishing out.Technologist can pass through control panel after police instruction is seen, just
The corresponding button of upper setting calls bonding die processing routine to automatically process process bonding die by semiconductor equipment.And
And, after it is determined that bonding die is eliminated, call corresponding program by current wafer from work automatically by semiconductor equipment
Spread out of in skill chamber, whole bonding die is processed, the processing procedure of chip transmission is without the need for manually participating in.This
The chip bonding die processing method of bright offer, on the one hand, due to need not manually participate in, therefore, compared to existing
Human resources can be saved for some processing schemes.On the other hand, semiconductor equipment is it is determined that current brilliant
After piece bonding die, police instruction of dishing out, technologist can call accordingly after police instruction is seen, at once
Ground programme-control semiconductor equipment carries out bonding die process, without the need for notifying professional, more need not spend the time
The arrival of professional is waited, semiconductor equipment is not in the wasting of resources caused because of wait.It can be seen that,
Chip bonding die processing method provided in an embodiment of the present invention, can either save manpower can save semiconductor again
The resource utilization of equipment.
Embodiment two
With reference to Fig. 2, flow process the step of show a kind of chip bonding die processing method of the embodiment of the present invention two
Figure.
The chip bonding die processing method of the embodiment of the present invention is comprised the following steps：
Step S202：Semiconductor equipment is being dished out and is showing that the warning for indicating current wafer bonding die refers to
After showing, the call instruction to bonding die processing routine is received.
Semiconductor equipment is it is determined that after chip bonding die, display alarm on the control panel is indicated, technologist
It was observed that after police instruction, clicking on X button and closing police instruction, semiconductor is received to police instruction
Out code.
After police instruction is closed, semiconductor equipment is generated and shows what bonding die processing routine was called
Interfaces windows, wherein, in interfaces windows comprising setting button, technologist by pressing setting button with
Send the call instruction to bonding die processing routine.
Step S204：Semiconductor equipment calls bonding die processing routine according to call instruction.
In technical process, when semiconductor equipment dish out bonding die alarm command after, technologist then calls
Bonding die processing routine, the processing routine can control semiconductor equipment and perform bonding die handling process automatically.Tool
Body handling process is as shown in following step.
Step S206：Semiconductor equipment determines current wafer whether bonding die.
In order to avoid the non-bonding die of current wafer, but asking for bonding die processing routine is called in technologist's maloperation
Topic, before bonding die process is performed, need to be confirmed whether really there is bonding die problem.When it is determined that above-mentioned
Not maloperation is called, when truly having chip bonding die, then calls the bonding die set in bonding die processing routine to process
Mode carries out bonding die process.
A kind of preferred mode for determining current wafer whether bonding die is as follows：
S1：Judge whether current wafer is located in processing chamber.
If judged result is no, non-wafer in processing chamber is proved, therefore, it is not possible to there is bonding die
Problem, therefore, also just without the need for performing bonding die processing routine again.Therefore, now can dish out warning, whole viscous
Piece processing routine terminates.
S2：If so, then judge whether current wafer is located on manipulator.
If the judged result in step S1 is there is chip in processing chamber, the possibility that there is bonding die,
Accordingly, it would be desirable to determine whether whether there is chip on manipulator.Due to, although chip is in processing chamber,
But it is likely to be and departs from outside from manipulator to processing chamber during transport with chuck, therefore, need
Chip is excluded in processing chamber and situation of the chuck on manipulator is had disengaged from.
When judged result is that current wafer is located on manipulator, then illustrate that chip departs from chuck, therefore,
Can not possibly there is a problem of bonding die, now, the chip on manipulator be spread out of into processing chamber and puts back to film chamber
.
S3：If current wafer is not located on manipulator, judge for jack-up current wafer thimble whether
Stretch out.
S4：If thimble is not extended out, it is determined that current wafer is in bonding die state.
If being in bonding die state, execution step S208.
Step S208：When it is determined that result is to be, semiconductor equipment judges the corresponding technique of current wafer
Whether bonding die handling process item is included in formula；If comprising, execution step S210, if not including,
Then perform setting operation.
Wherein, bonding die handling process item can include any one process for following two processing modes
The corresponding technical recipe of mode.The first, by gas injection in processing chamber, making chip and chuck
The method of disengaging.Secondth, by the positive and negative charge neutralization made on chuck negatively charged to chuck, so that card
Absorption affinity on disk eliminates the method for departing from chip and chuck.It should be noted that specifically arranging
Cheng Zhong, can only arrange the corresponding formula of above-mentioned any one mode, it is also possible to while arranging two ways
Corresponding formula.
In the embodiment of the present invention, the corresponding Ju Ti Pei Fang of bonding die processing mode will be carried out, be configured in technique and match somebody with somebody
Fang Zhong, so, when bonding die processing routine is called correspondingly fills a prescription, then can carry out bonding die process.
Bonding die handling process item includes：Radio-frequency power supply parameter, gaseous species parameter and gas flow ginseng
At least one in number.Wherein, radio-frequency power supply parameter be for carrying out above-mentioned second bonding die processing mode,
And gaseous species parameter and gas flow parameter are used to carry out above-mentioned the first bonding die processing mode.
Preferably, bonding die handling process item includes：Radio-frequency power supply parameter, gaseous species parameter and gas
Flow parameter, so, just can successively perform above two processing mode when bonding die process is performed,
To guarantee that chip successfully can depart from chuck.
It should be noted that the occurrence of the above-mentioned parameter included in bonding die handling process item, can there is this
Art personnel are flexibly arranged according to the actual conditions of semiconductor board, and this is not made in the present embodiment
Concrete restriction.
Wherein, setting operation could be arranged to directly send warning, and bonding die handling process terminates.
Step S210：If including bonding die handling process item in technical recipe, semiconductor equipment then calls viscous
Piece processing routine is processed current wafer.
Bonding die handling process item is provided with technical recipe, then proves that the technical recipe supports automatic bonding die
Handling process, now, then can call correspondingly formula to carry out follow-up bonding die and process by bonding die processing routine
Flow process.And if bonding die handling process item is not provided with technical recipe, prove that the technical recipe is not supported
Automatic bonding die handling process, therefore, it is impossible to execution step S210, and setting operation is performed, for example：
Warning is directly sent, bonding die handling process terminates.
A kind of mode departed from bonding die chip from chuck preferably through bonding die processing routine is as follows：
First, semiconductor equipment is called according to radio-frequency power supply parameter to bonding die chip by bonding die processing routine
Carry out static elimination operation.Secondly, semiconductor equipment calls gaseous species parameter by bonding die processing routine
And gas flow parameter, gas injection in the chamber being located to current wafer, to release bonding die chip
Bonding die state.
Step S212：Semiconductor equipment judges whether successful to depart from；If successful execution step S214, if
It is unsuccessful, then perform setting operation.
Wherein, setting operation could be arranged to send alarm command, while terminating whole bonding die handling process.
Now, then prove that Auto Processing cannot be successfully processed this bonding die, need manual by professional
Processed.
Step S214：When judging that bonding die chip departs from successfully, then semiconductor equipment calls chip automatically
Transmission procedure spreads out of current wafer from processing chamber.
When judging that bonding die successfully departs from, then correspondingly sequence controlled machine hand is called to depart from chuck
Chip spread out of from processing chamber to box chamber.
By chip bonding die processing method provided in an embodiment of the present invention, semiconductor equipment is it is determined that current brilliant
After piece bonding die, police instruction of dishing out.Technologist can pass through control panel after police instruction is seen, just
The corresponding button of upper setting calls bonding die processing routine to automatically process process bonding die by semiconductor equipment.And
And, after it is determined that bonding die is eliminated, call corresponding program by current wafer from work automatically by semiconductor equipment
Spread out of in skill chamber, whole bonding die is processed, the processing procedure of chip transmission is without the need for manually participating in.This
The chip bonding die processing method of bright offer, on the one hand, due to need not manually participate in, therefore, compared to existing
Human resources can be saved for some processing schemes.On the other hand, semiconductor equipment is it is determined that current brilliant
After piece bonding die, police instruction of dishing out, technologist can call accordingly after police instruction is seen, at once
Ground programme-control semiconductor equipment carries out bonding die process, without the need for notifying professional, more need not spend the time
The arrival of professional is waited, semiconductor equipment is not in the wasting of resources caused because of wait.It can be seen that,
Chip bonding die processing method provided in an embodiment of the present invention, can either save manpower can save semiconductor again
The resource utilization of equipment.
Referring to Fig. 3, Fig. 4 the chip bonding die processing method of the present embodiment is carried out with an instantiation
Explanation.The chip bonding die handling process of this instantiation is as shown in figure 3, specifically include following steps：
Step S302：Bonding die is reported to the police and is dished out.
Semiconductor equipment is it is determined that after current wafer bonding die, the display alarm on display interface is indicated.Operation
Work passes through the police instruction, you can determine current wafer bonding die.Step S304：Operative employee performs automatic
Handling process.
In technical process, after bonding die problem occurs, the warning of the bonding die that can dish out first.At this moment operate
Work (i.e. technologist) is known to be had after the generation of bonding die problem, it is possible to perform this automatic flow.Specifically,
Operative employee closes the police instruction shown on display interface, and a new boundary can be shown on display interface
Face, shows on the surface the setting button for calling Auto Processing, and technologist clicks on display surface
The setting button triggering Auto Processing shown on plate.
Step S306：After the completion of Auto Processing, judge whether bonding die；If the determination result is YES,
Then execution step S308, if judged result is no, execution step S310.
Above-mentioned Auto Processing is to carry out control realization by the corresponding program arranged in semiconductor equipment.
After the completion of Auto Processing operation, semiconductor equipment needs to judge whether bonding die, if still bonding die
Dish out warning, otherwise pass chip back film chamber.
Step S308：When judged result is to be, directly chip is spread out of into processing chamber automatically, passed back
Film chamber.
Step S310：Dish out alarm command.
In this instantiation, the software control flow for automatically processing bonding die problem is designed, ask bonding die
The process of topic can be carried out automatically, and according to the situation after process, judge whether that passing piece automatically returns in film magazine,
And carry out next step technique.
Below, with reference to Fig. 4 to step S304 in " operative employee perform Auto Processing " carry out in detail
Describe in detail bright, concrete processing procedure is as follows：
Three partial contents can be substantially divided in following processing procedures, Part I is：Judge whether true generation
Bonding die problem；Part II：Parameter in calling technological formula carries out bonding die and processes operation；Part III：
After the completion of bonding die process operation, determine whether bonding die problem successfully solves.
Step S402：Judge whether there is chip in PM chambers (i.e. processing chamber)；If having, step is performed
Rapid S404, if nothing, performs setting operation.
After automatic control flow chart is performed, position of the chip in manipulator and chamber is first determined whether, and carried out
Respective handling.
Wherein, setting operation could be arranged to send warning, and terminate Auto Processing.
Step S404：When there is chip in judging processing chamber, then judge whether there is chip on manipulator；
If nothing, execution step S406, if having, performs setting operation.
Wherein, setting operation could be arranged to pass chip back film chamber.
Step S406：Vacuum pumping is carried out to processing chamber.
Step S408：Judge whether bonding die.
Through above-mentioned steps S402 to step S406, it has been determined that chip is not in processing chamber and in machine
Tool needs to judge whether genuine bonding die on hand, now.
When judging, judge whether stretch out for the thimble of jack-up chip, if thimble is not extended out, it is determined that
Current wafer is in bonding die state.If conversely, thimble stretches out, it is determined that current wafer is in bonding die shape
State.When thimble stretches out, then direct execution step S416, by chip processing chamber is spread out of, and is passed back
Box chamber.
Step S410：When it is determined that during bonding die, judging whether there is bonding die handling process item in technical recipe；
If having, execution step S412, if nothing, is performing setting operation.
Wherein, bonding die handling process item can include the method for the positive and negative charge on chuck to be neutralized
Technique item is " Dechuck_pick " and the inflation method correspondence of inert gas is poured in processing chamber
Technique item.
In Auto Processing, need to call a specific recipe fill a prescription (this reciper according to
Board actual state, presets.By adjusting special parameter, to solve the problems, such as the bonding die of specific board)
To carry out processing bonding die problem.During implementing, technologist is according to different platform
Situation, different bonding die situation can pass through the parameter for adjusting recipe, ask preferably to eliminate bonding die
Topic.
Wherein, setting operation is to send police instruction.Preferably, while police instruction is sent, show
Show " filling a prescription without Dechuck_pick before a key Dechuck ", with the concrete original for pointing out technologist to report to the police
Cause.
Step S412：When there is bonding die handling process item in technical recipe, bonding die handling process item is run.
Step S414：Judge whether bonding die；If so, then execution step S416, if it is not, then perform setting
Fixed operation.
Wherein, setting operation can be to send alarm command.Preferably, while alarm command is sent
Show the message of " bonding die, forbids spreading out of chip, asks Facilities Engineer's manual handle ", to point out technique
Personnel's bonding die fails to process successfully.
Step S416：When judged result is non-bonding die, chip is passed back film chamber.
Pass chip back film chamber, so far, whole Auto Processing terminates.
The bonding die processing method provided by this instantiation, on the one hand, because bonding die process is by partly leading
Body equipment is automatically processed, therefore, alleviate difficulty, time that operative employee processes bonding die problem.It is another
Aspect, the bonding die handling process being provided with technical recipe corresponding to the method for various process bonding die problems
, bonding die process is carried out by automatically processing program by calling correspondingly technique item, reduce professional people
The number of times of member's process problem, saves human resources.Another further aspect, each bonding die configured in technical recipe
The setting of the corresponding technological parameter of handling process item can according to the actual requirements be entered by those skilled in the art
Row adjustment, therefore, it can the semiconductor equipment being adapted under different production environments.
Embodiment three
With reference to Fig. 5, a kind of structured flowchart of chip bonding die processing meanss of the embodiment of the present invention three is shown.
The chip bonding die processing meanss of the embodiment of the present invention include：Receiver module 502, for dishing out simultaneously
Show for after the police instruction for indicating current wafer bonding die, reception to call finger to bonding die processing routine
Order；Calling module 504, for calling bonding die processing routine according to the call instruction；Processing module 506,
For by bonding die processing routine bonding die chip being departed from from chuck by described；Judge module 508, uses
In judging described to depart from whether success；Transport module 510, if the judged result for judge module is into
Work(, then call chip transmission procedure to spread out of the current wafer from processing chamber automatically.
The chip bonding die processing meanss provided by the present embodiment, it is determined that after current wafer bonding die, dishing out
Police instruction.Technologist just can accordingly be pressed after police instruction is seen by what is arranged on control panel
Button adjusting automatically processes process bonding die with bonding die processing routine by semiconductor equipment.Also, it is determined that bonding die
After elimination, corresponding program is called to spread out of current wafer from processing chamber automatically by semiconductor equipment,
Whole bonding die is processed, the processing procedure of chip transmission is without the need for manually participating in.The chip that the present invention is provided glues
Piece treating apparatus, on the one hand, due to need not manually participate in, therefore, compared to existing processing scheme
Speech can save human resources.On the other hand, semiconductor equipment is it is determined that after current wafer bonding die, dish out
Police instruction, technologist can call correspondingly programme-control partly to lead after police instruction is seen, at once
Body equipment carries out bonding die process, without the need for notifying professional, need not more spend the time to wait professional's
Arrive, semiconductor equipment is not in the wasting of resources caused because of wait.It can be seen that, the embodiment of the present invention
The chip bonding die processing meanss of offer, can either save manpower can save the resource of semiconductor equipment again
Rate.
Example IV
With reference to Fig. 6, a kind of structured flowchart of chip bonding die processing meanss of the embodiment of the present invention four is shown.
The embodiment of the present invention is the further optimization to the chip bonding die processing meanss in embodiment three, optimization
Chip bonding die processing meanss afterwards include：Receiver module 602, for dishing out and showing for indicating to work as
After the police instruction of front chip bonding die, the call instruction to bonding die processing routine is received；Calling module 604,
For calling bonding die processing routine according to the call instruction；Processing module 606, for by bonding die
Reason program departs from bonding die chip from chuck by described；Judge module 608, for judging the disengaging
It is whether successful；Transport module 610, if the judged result for judge module is successfully, to call automatically
Chip transmission procedure spreads out of the current wafer from processing chamber.
Preferably, the processing module 606 of the embodiment of the present invention includes：First processing module 6062, is used for
Determine the current wafer whether bonding die；Second processing module 6064, in the first processing module
Determination result when being, to judge in the corresponding technical recipe of current wafer whether include bonding die handling process
；3rd processing module 6066, for matching somebody with somebody for the technique in the judged result of the Second processing module
In side include bonding die handling process item when, then call bonding die processing routine to the current wafer at
Reason.
Preferably, bonding die handling process item includes：Radio-frequency power supply parameter, gaseous species parameter and gas
At least one in body flow parameter.
Preferably, bonding die handling process item includes：Radio-frequency power supply parameter, gaseous species parameter and gas
Flow parameter；Processing module 606 is departed from bonding die chip from chuck by described by bonding die processing routine
When：The radio-frequency power supply parameter is called to carry out electrostatic to the bonding die chip by the bonding die processing routine
Eliminate operation；The gaseous species parameter and gas flow ginseng are called by the bonding die processing routine
Number, gas injection in the chamber being located to the current wafer, to release the bonding die shape of the bonding die chip
State.
Preferably, first processing module 6062 determine the current wafer whether bonding die when：Judge described
Whether current wafer is located in processing chamber；If so, then judge whether the current wafer is located at manipulator
On；If the current wafer is not located on manipulator, judge for the thimble of current wafer described in jack-up
Whether stretch out；If the thimble is not extended out, it is determined that the current wafer is in bonding die state.
The chip bonding die processing meanss of the embodiment of the present invention are used to realize previous embodiment one and embodiment two
In corresponding chip bonding die processing method, and with the beneficial effect of corresponding embodiment of the method, here
Repeat no more.
Each embodiment in this specification is described by the way of progressive, and each embodiment is stressed
Be all difference with other embodiment, between each embodiment identical similar part mutually referring to
.For system embodiment, due to itself and embodiment of the method basic simlarity, so the ratio of description
Relatively simple, related part is illustrated referring to the part of embodiment of the method.
Above to a kind of chip bonding die processing method provided by the present invention and device, detailed Jie has been carried out
Continue, specific case used herein is set forth to the principle and embodiment of the present invention, above reality
The explanation for applying example is only intended to help and understands the method for the present invention and its core concept；Simultaneously for ability
The those skilled in the art in domain, according to the thought of the present invention, can in specific embodiments and applications
There is change part, in sum, this specification content should not be construed as limiting the invention.
Claims (10)
1. a kind of chip bonding die processing method, it is characterised in that include：
After dishing out and showing for the police instruction for indicating current wafer bonding die, receive and journey is processed to bonding die
The call instruction of sequence；
Bonding die processing routine is called according to the call instruction, by bonding die processing routine by described by bonding die
Chip departs from from chuck；
Judge whether the disengaging is successful；
If success, calls chip transmission procedure to spread out of the current wafer from processing chamber automatically.
2. method according to claim 1, it is characterised in that described by bonding die processing routine
By it is described bonding die chip is departed from from chuck the step of include：
Determine the current wafer whether bonding die；
When it is determined that result is to be, whether judge in the corresponding technical recipe of current wafer comprising bonding die process
Technique item；
If including bonding die handling process item in the technical recipe, bonding die processing routine is called to work as to described
Front chip is processed.
3. method according to claim 2, it is characterised in that in the bonding die handling process item
Including：At least one in radio-frequency power supply parameter, gaseous species parameter and gas flow parameter.
4. method according to claim 3, it is characterised in that in the bonding die handling process item
Including：Radio-frequency power supply parameter, gaseous species parameter and gas flow parameter；
It is described by bonding die processing routine by it is described bonding die chip is departed from from chuck the step of include：
The radio-frequency power supply parameter is called to carry out the bonding die chip by the bonding die processing routine quiet
Electricity eliminates operation；
The gaseous species parameter and gas flow parameter are called by the bonding die processing routine, to institute
Gas injection in the chamber at current wafer place is stated, to release the bonding die state of the bonding die chip.
5. method according to claim 2, it is characterised in that the determination current wafer
The step of bonding die includes：
Judge whether the current wafer is located in processing chamber；
If so, then judge whether the current wafer is located on manipulator；
If the current wafer is not located on manipulator, judge for the thimble of current wafer described in jack-up
Whether stretch out；
If the thimble is not extended out, it is determined that the current wafer is in bonding die state.
6. a kind of chip bonding die processing meanss, it is characterised in that include：
Receiver module, for after dishing out and showing for the police instruction for indicating current wafer bonding die, connecing
Receive the call instruction to bonding die processing routine；
Calling module, for calling bonding die processing routine according to the call instruction；
Processing module, for being departed from bonding die chip from chuck by described by bonding die processing routine；
Judge module, for judging whether the disengaging is successful；
Transport module, if the judged result for judge module is successfully, to call chip to transmit journey automatically
Sequence spreads out of the current wafer from processing chamber.
7. device according to claim 6, it is characterised in that the processing module includes：
First processing module, for determining the current wafer whether bonding die；
Second processing module, for when the determination result of the first processing module is to be, judging current
Whether bonding die handling process item is included in the corresponding technical recipe of chip；
3rd processing module, in being the technical recipe in the judged result of the Second processing module
During comprising bonding die handling process item, then bonding die processing routine is called to process the current wafer.
8. device according to claim 7, it is characterised in that in the bonding die handling process item
Including：At least one in radio-frequency power supply parameter, gaseous species parameter and gas flow parameter.
9. device according to claim 8, it is characterised in that in the bonding die handling process item
Including：Radio-frequency power supply parameter, gaseous species parameter and gas flow parameter；
The processing module by bonding die processing routine by it is described bonding die chip is departed from from chuck when：
The radio-frequency power supply parameter is called to carry out the bonding die chip by the bonding die processing routine quiet
Electricity eliminates operation；
Called according to the gaseous species parameter and gas flow parameter by the bonding die processing routine, to
Gas injection in the chamber that the current wafer is located, to release the bonding die state of the bonding die chip.
10. device according to claim 7, it is characterised in that the first processing module determines
The current wafer whether bonding die when：
Judge whether the current wafer is located in processing chamber；
If so, then judge whether the current wafer is located on manipulator；
If the current wafer is not located on manipulator, judge for the thimble of current wafer described in jack-up
Whether stretch out；
If the thimble is not extended out, it is determined that the current wafer is in bonding die state.
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| CN201510650673.6A CN106571316A (en) | 2015-10-09 | 2015-10-09 | Wafer slice bonding processing method and apparatus thereof |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Beijing, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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Application publication date: 20170419 |