CN102097529A - Edge cleaning method of ultraviolet laser thin-film solar battery - Google Patents
Edge cleaning method of ultraviolet laser thin-film solar battery Download PDFInfo
- Publication number
- CN102097529A CN102097529A CN2010105354748A CN201010535474A CN102097529A CN 102097529 A CN102097529 A CN 102097529A CN 2010105354748 A CN2010105354748 A CN 2010105354748A CN 201010535474 A CN201010535474 A CN 201010535474A CN 102097529 A CN102097529 A CN 102097529A
- Authority
- CN
- China
- Prior art keywords
- laser
- film solar
- thin
- clear limit
- edge cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses an edge cleaning method of an ultraviolet laser thin-film solar battery, belonging to the field of laser processing. The invention has the key characteristics that: ultraviolet laser with quite high absorption rate of transparent conductive film is introduced to the edge cleaning application of a thin-film solar battery, and in contrast to the laser power adopted by infrared laser edge cleaning, the method can complete high quality laser edge cleaning efficiently with smaller ultraviolet power, besides, the edge cleaning method has low possibility of damaging glass, extremely strong compatibility with different types of transparent conductive films and reduced using cost.
Description
Technical field the invention belongs to field of laser processing, particularly field, the clear limit of laser film solar cell.
Background technology
The development of current thin film solar energy is in the ascendant, in last one technology of thin film solar glass substrate battery is that glass substrate is carried out air-tight packaging, in order to put only battery short circuit and better air-tight packaging, battery circumferential 10mm need be cleaned out to the film (positive and negative electrode film and active layer film) in 15mm zone, be referred to as clearly the limit in the industry or play a minor role, adopt the way of sandblast the earliest, cost is low, but environmental pollution is serious, therefore is eliminated gradually.
Seeing through glass direct boiling battery glass neighboring area with laser, is present popular way, in order to satisfy the rhythm of production of one minute one sheet glass, adopts 200W to carry out the clear limit of laser to the high power infrared laser of 500W in the industry usually.This laser is owing to be side pump multimode laser, and energy consumption is very high, and the life-span is not long, and use cost is very high, and the short time is difficult to popularize and uses, and simultaneously, for different nesa coatings, its clear limit speed has the gap of the order of magnitude, and therefore, its scope of application is also limited.
Latent heat, the abbreviation of latent heat of phase change, the material that refers to unit mass absorb or liberated heat to another mutually from a phase change under the isothermal and isobaric situation.This is one of characteristics of having during the phase co-conversion between the solid, liquid, gas three-phase and between the different solid phases of object.Latent heat between the solid, liquid is called heat of fusion (or heat of solidification), is called heat of vaporization (or heat of condensation) between liquid, the gas, and consolidates, be called the heat of sublimation (or the heat of sublimating) between the gas.
We can think, in the process of the clear limit of laser, solar energy film is again direct boiling under the laser action, these overall film thickness are no more than 5 microns, and the solar energy film gross thickness of most batteries does not even surpass 2 microns, and energy needed can calculate according to the heat of vaporization of associated materials, but can affirm, adopt 200W to carry out the clear limit of laser to the high power infrared laser of 500W, most energy are not absorbed, and have directly slatterned.This is because the thin-film solar cells conducting film to visible transparent, also has certain transmitance to infrared light, and clearly, adopting infrared laser to be used for the clear limit of laser is not the clear limit of a rational laser scheme.
But for the thin film solar automatic production line, there is its inevitable demand on the clear limit of laser, therefore, need find the clear limit of more rational laser scheme.
Summary of the invention
The objective of the invention is to, the ultraviolet pulse laser cold working mode is introduced the clear limit of laser film solar cell, be the clear limit of a kind of brand-new laser mode, possess the clear limit of laser efficient height, be fit to variety classes electrically conducting transparent membrane removal, clear limit quality is good, do not hinder advantage such as glass.
The object of the present invention is achieved like this: adopt the very high ultraviolet pulse laser of nesa coating absorptivity as LASER Light Source, the Ultra-Violet Laser of acousto-optic Q modulation ultraviolet laser output is coupled into galvanometer through certain outer light path element, be coupled into the flat field scanning lens through galvanometer again, make the laser focusing focus be positioned near the solar energy film, galvanometer scans repeatedly can finish laser clear limit action.Because nesa coating is very high to the Ultra-Violet Laser absorptivity, so capacity usage ratio is very high, thermal impact is also very little, and edge quality is good, and clear limit speed is very fast.For circular laser facula, just it is clean to need certain hot spot degree of overlapping to remove solar energy film, decrease in efficiency is many like this, for the further clear limit of raising laser efficient, can adopt square focus spot, so the clear limit of laser speed have can double about.In order further to improve the utilization ratio of laser energy, can adopt the flat-top shaping technique to obtain the flat-top UV laser beam, like this, capacity usage ratio can improve again more than at least one times, clear limit better quality, and do not hinder glass.
Selecting the immediate cause of Ultra-Violet Laser light source is that nesa coating is very high to the Ultra-Violet Laser absorption coefficient, therefore, in principle so long as the higher pulsed ultraviolet laser of nesa coating absorption coefficient can extraordinaryly be used for the clear limit of nesa coating laser, wave-length coverage is from 300nm to 400nm, the Ultra-Violet Laser light source of pulse repetition frequency from 10 hertz to 200 KHz may be used to the clear limit of thin film solar laser.
The present invention, the clear limit of a kind of Ultra-Violet Laser thin-film solar cells method owing to adopted above-mentioned technical scheme, makes it compared with prior art, has following advantage and good effect:
1. the present invention proposes Ultra-Violet Laser is used for the clear limit of thin film solar laser, and for the clear limit of present infrared laser, the present invention possesses that limit speed is fast clearly, and clear limit quality is good, and utilization ratio of laser energy greatly improves.
2. the Ultra-Violet Laser that adopts of the present invention, if be designed to square focus spot, the clear limit of its laser laser facula Duplication can obviously reduce, so laser clear limit speed and utilization ratio of laser energy can further improve.
3. the Ultra-Violet Laser of the present invention's employing if be designed to flat-top laser, is compared with the Ultra-Violet Laser of Gaussian Profile, and its laser clear limit speed and utilization ratio of laser energy can further improve, and are not easy to hinder glass.
4, the present invention is when implementing, if adopt the Ultra-Violet Laser of square flat top beam, its clear limit of comprehensive laser effect can be more outstanding, clear limit efficient height, and clear limit quality is good, and the clear limit of the relative infrared laser of use cost decreases.
Description of drawings
To the present invention, two embodiment of the clear limit of a kind of Ultra-Violet Laser thin-film solar cells method can further understand purpose of the present invention, specific structural features and advantage in conjunction with the description of its accompanying drawing by following.Wherein, accompanying drawing is:
Fig. 1 embodiment one is the clear limit of galvanometer flat field scanning Ultra-Violet Laser;
Fig. 2 embodiment one is the clear limit of rectangle static focus hot spot Ultra-Violet Laser
Fig. 3 embodiment two is the clear limit of rectangle static focus hot spot Ultra-Violet Laser vertical views;
Embodiment
See also shown in Figure 1, this is a kind of embodiment of the clear limit of a kind of Ultra-Violet Laser thin-film solar cells of the present invention method, material 14 to be processed is an amorphous silicon thin-film solar glass cell substrates, the 1st, ultraviolet laser, wavelength 355nm, pulse repetition frequency 30KHz, average power 12W, pulsewidth 18ns, beam quality factor is less than 1.1,2 is 5 multiplying power laser beam expanders, with incident beam-expanding collimation light beam, and 5 millimeters of beam diameters, 3 is laser flat-top element, collimated laser beam is shaped as flat top beam, and its output beam 4 incides main shaft 10 clampings of galvanometer first reflecting optics 9,9 by galvanometer motor 11,4 through 9 reflections, output beam 8,8 reflects to form light beam 7 through speculum 6, and speculum 6 is fixed on the main shaft of galvanometer motor 5.Light beam 7 process focal lengths are that 100 millimeters the heart amasthenic lens far away 12 back focuses that converge laser 13,13 that form drop on workpiece 14 lower surfaces, and workpiece 14 lower surfaces have trilamellar membrane: aluminium film, silicon fiml, zinc oxide transparent conducting film, 2 microns of trilamellar membrane gross thickness.Galvanometer motor 5 and 11 is under control system control, and the control laser spot comes and goes scanning at 14 lower surfaces, and the solar energy film in the zone of scanning process promptly is eliminated totally, finishes the clear limit of laser task.Laser facula 0.4mm * 0.4mm, clear limit area velocity can reach 40cm
2/ second.This speed is enough to surpass infrared clear limit speed at present, and clear limit quality is better, is suitable for the clear limit of wider nesa coating laser.
See also shown in Figure 2ly, this is a kind of embodiment of the clear limit of a kind of Ultra-Violet Laser thin-film solar cells of the present invention method, and material 14 to be processed is an amorphous silicon thin-film solar glass cell substrates, the 1st, ultraviolet laser, wavelength 355nm, pulse repetition frequency 30KHz, average power 12W, pulsewidth 18ns, beam quality factor is 5 multiplying power laser beam expanders less than 1.1,2, with incident beam-expanding collimation light beam, 5 millimeters of beam diameters, 3 is laser flat-top element, and collimated laser beam is shaped as the rectangle flat top beam, through speculum 15 reflections, reverberation 16 focuses on through imaging lens, the focus of convergent beam 13 is positioned at 14 lower surfaces, and focus spot is of a size of 0.03mm * 5mm, asks for an interview Fig. 3, the 14th, glass substrate, the 18th, focal beam spot 0.03mm * 5mm, size is to be positioned at 14 edge, hot spot 18 is walked two circles around 14, promptly finishes the clear limit of laser.
The foregoing description is concrete application more of the present invention.In fact its application is not limited to top described situation, for example can also adopt optical fiber coupling output galvanometer flat field scanning the carrying out clear limit of laser etc.
In a word, the present invention proposes the clear limit of a kind of Ultra-Violet Laser thin-film solar cells method, its important feature is: the Ultra-Violet Laser that the nesa coating absorptivity is very high is introduced the clear limit of solar film battery and is used, with respect to the used laser power in the clear limit of infrared laser, the present invention adopts much smaller ultraviolet power can finish the clear limit of efficient, high-quality laser, and be not easy to hinder glass, extremely strong to glass transparent conducting film compatibility, and use cost decreases.
Claims (6)
1. the clear limit of Ultra-Violet Laser thin-film solar cells method, be primarily characterized in that, adopt the Ultra-Violet Laser light source, wave-length coverage 300 nanometers are between 400 nanometers, laser beam focuses on through optical lens, direct boiling comprises the thin-film material of nesa coating, realizes the removing of thin film solar glass baseplate surface film.
2. a kind of method as claimed in claim 1 is characterized in that optical focusing system is the flat field scanning mirror.
3. a kind of method as claimed in claim 1 is characterized in that optical focusing system is the quiescent imaging focus lamp.
4. as claim 2 or 3 described a kind of methods, it is characterized in that its laser focusing hot spot is a square focus spot.
5. as claim 2 or 3 described a kind of methods, it is characterized in that the laser focusing hot spot is the flat-top hot spot.
6. as claim 4 or 5 described a kind of methods, it is characterized in that the laser focusing hot spot is the flat-top square focus spot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105354748A CN102097529A (en) | 2010-11-05 | 2010-11-05 | Edge cleaning method of ultraviolet laser thin-film solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105354748A CN102097529A (en) | 2010-11-05 | 2010-11-05 | Edge cleaning method of ultraviolet laser thin-film solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102097529A true CN102097529A (en) | 2011-06-15 |
Family
ID=44130496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105354748A Pending CN102097529A (en) | 2010-11-05 | 2010-11-05 | Edge cleaning method of ultraviolet laser thin-film solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102097529A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102916081A (en) * | 2012-10-19 | 2013-02-06 | 张立国 | Edge deletion method for thin-film solar cells |
| CN104124401A (en) * | 2014-07-21 | 2014-10-29 | 四川虹视显示技术有限公司 | OLED (Organic Light Emitting Diode) laser edging machine |
| CN107138858A (en) * | 2017-05-12 | 2017-09-08 | 武汉光谷航天三江激光产业技术研究院有限公司 | Large-scale workpiece laser cleaning equipment |
| CN108453375A (en) * | 2018-05-25 | 2018-08-28 | 北京莱泽光电技术有限公司 | A kind of solar battery thin film clear side processing unit (plant) and processing method |
| CN109530930A (en) * | 2018-12-27 | 2019-03-29 | 北京中科镭特电子有限公司 | A method of laser processing chip |
| CN109530931A (en) * | 2018-12-27 | 2019-03-29 | 北京中科镭特电子有限公司 | A kind of method and device laser machining chip |
| CN109551115A (en) * | 2018-12-27 | 2019-04-02 | 北京中科镭特电子有限公司 | A kind of device laser machining chip |
| CN109551116A (en) * | 2018-12-27 | 2019-04-02 | 北京中科镭特电子有限公司 | A kind of device and method laser machining chip |
| CN109551114A (en) * | 2018-12-27 | 2019-04-02 | 北京中科镭特电子有限公司 | A kind of method and device laser machining chip |
| CN109551117A (en) * | 2018-12-27 | 2019-04-02 | 北京中科镭特电子有限公司 | A method of laser processing chip |
| CN111403545A (en) * | 2018-12-28 | 2020-07-10 | 东泰高科装备科技有限公司 | Laser edge cleaning method and device for solar cell, preparation method and processing equipment |
| CN112547698A (en) * | 2020-12-09 | 2021-03-26 | 云南电网有限责任公司临沧供电局 | Online laser cleaning device and method for lens |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330580A (en) * | 1998-12-16 | 2002-01-09 | 通用扫描公司 | Laser processing |
| CN1395514A (en) * | 2000-01-20 | 2003-02-05 | 瓦洛尼亚空间后勤股份有限公司 | Method for locally removing coat applied on translucent or transparent substrate |
| CN101013200A (en) * | 2007-02-12 | 2007-08-08 | 苏州德龙激光有限公司 | Laser precision finishing optical system |
| US20080029152A1 (en) * | 2006-08-04 | 2008-02-07 | Erel Milshtein | Laser scribing apparatus, systems, and methods |
| CN101497149A (en) * | 2009-03-02 | 2009-08-05 | 张立国 | Laser flying focus scanning system |
| CN101734868A (en) * | 2008-11-10 | 2010-06-16 | 康宁股份有限公司 | Method of making subsurface marks in glass |
-
2010
- 2010-11-05 CN CN2010105354748A patent/CN102097529A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330580A (en) * | 1998-12-16 | 2002-01-09 | 通用扫描公司 | Laser processing |
| CN1395514A (en) * | 2000-01-20 | 2003-02-05 | 瓦洛尼亚空间后勤股份有限公司 | Method for locally removing coat applied on translucent or transparent substrate |
| US20080029152A1 (en) * | 2006-08-04 | 2008-02-07 | Erel Milshtein | Laser scribing apparatus, systems, and methods |
| CN101013200A (en) * | 2007-02-12 | 2007-08-08 | 苏州德龙激光有限公司 | Laser precision finishing optical system |
| CN101734868A (en) * | 2008-11-10 | 2010-06-16 | 康宁股份有限公司 | Method of making subsurface marks in glass |
| CN101497149A (en) * | 2009-03-02 | 2009-08-05 | 张立国 | Laser flying focus scanning system |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102916081A (en) * | 2012-10-19 | 2013-02-06 | 张立国 | Edge deletion method for thin-film solar cells |
| CN102916081B (en) * | 2012-10-19 | 2015-07-08 | 张立国 | Edge deletion method for thin-film solar cells |
| CN104124401A (en) * | 2014-07-21 | 2014-10-29 | 四川虹视显示技术有限公司 | OLED (Organic Light Emitting Diode) laser edging machine |
| CN104124401B (en) * | 2014-07-21 | 2016-11-09 | 四川虹视显示技术有限公司 | A kind of OLED laser edging device |
| CN107138858A (en) * | 2017-05-12 | 2017-09-08 | 武汉光谷航天三江激光产业技术研究院有限公司 | Large-scale workpiece laser cleaning equipment |
| CN108453375A (en) * | 2018-05-25 | 2018-08-28 | 北京莱泽光电技术有限公司 | A kind of solar battery thin film clear side processing unit (plant) and processing method |
| CN109551115A (en) * | 2018-12-27 | 2019-04-02 | 北京中科镭特电子有限公司 | A kind of device laser machining chip |
| CN109530931A (en) * | 2018-12-27 | 2019-03-29 | 北京中科镭特电子有限公司 | A kind of method and device laser machining chip |
| CN109530930A (en) * | 2018-12-27 | 2019-03-29 | 北京中科镭特电子有限公司 | A method of laser processing chip |
| CN109551116A (en) * | 2018-12-27 | 2019-04-02 | 北京中科镭特电子有限公司 | A kind of device and method laser machining chip |
| CN109551114A (en) * | 2018-12-27 | 2019-04-02 | 北京中科镭特电子有限公司 | A kind of method and device laser machining chip |
| CN109551117A (en) * | 2018-12-27 | 2019-04-02 | 北京中科镭特电子有限公司 | A method of laser processing chip |
| CN109551114B (en) * | 2018-12-27 | 2021-03-05 | 北京中科镭特电子有限公司 | Method and device for processing chip by laser |
| CN109551116B (en) * | 2018-12-27 | 2021-03-05 | 北京中科镭特电子有限公司 | Device and method for processing chip by laser |
| CN111403545A (en) * | 2018-12-28 | 2020-07-10 | 东泰高科装备科技有限公司 | Laser edge cleaning method and device for solar cell, preparation method and processing equipment |
| CN112547698A (en) * | 2020-12-09 | 2021-03-26 | 云南电网有限责任公司临沧供电局 | Online laser cleaning device and method for lens |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102916081B (en) | Edge deletion method for thin-film solar cells | |
| CN102097529A (en) | Edge cleaning method of ultraviolet laser thin-film solar battery | |
| CN102500923B (en) | Preparation device for preparing functional micro-nano materials on silicon surfaces based on femtosecond laser and method | |
| CN102470481B (en) | Laser processing method and apparatus | |
| Miyamoto et al. | Local melting of glass material and its application to direct fusion welding by ps-laser pulses | |
| CN102218415B (en) | Method and device for cleaning tokamak first mirror by vacuum ultraviolet laser | |
| CN103105740B (en) | Solid-liquid combined target-based extreme ultraviolet source generator and light source system | |
| CN102598293B (en) | Method for manufacturing solar cell module, and apparatus for manufacturing solar cell module | |
| CN109590288B (en) | Method for cleaning impurities on transmission surface of light-transmitting medium by laser | |
| CN102581484B (en) | Method for preparing silicon-based surface light trapping structure by utilizing ultrashort pulse laser | |
| CN109967881A (en) | A kind of laser cleaning-texturing combined machining method | |
| CA2680925A1 (en) | Method of marking or inscribing a workpiece | |
| CN106552997B (en) | The method that sheet metal sand screen mesh is handled based on mechanism of ultrashort-pulse laser ablation principle | |
| CN102009051A (en) | Laser cleaning equipment and method for sol-gel membrane surface | |
| Haas et al. | Analysis of the laser ablation processes for thin-film silicon solar cells | |
| CN110614440B (en) | Optical element CO2Laser remelting and gasification composite polishing method | |
| KR101226079B1 (en) | Solar energy utilizing apparatus | |
| CN101710803A (en) | Solar concentrating generation device capable of realizing surplus heat utilization | |
| CN103056729A (en) | Device utilizing laser to polish fiber end face and glass surface and technique thereof | |
| CN204479830U (en) | For heliostat mirror body and the heliostat of tower type solar thermo-power station | |
| CN114226359A (en) | Cleaning system and cleaning method for removing pollutants from battery test probe | |
| CN106291949A (en) | A kind of apparatus for shaping of laser beam | |
| CN102922128B (en) | Method for rapidly preparing periodic corrugation structure on basis of premodulation laser | |
| CN202264023U (en) | Polishing device for optical fiber end face and glass surface by using laser | |
| CN108565313A (en) | One kind removing membrane processing method and equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| DD01 | Delivery of document by public notice |
Addressee: Zhang Liguo Document name: Notification of Publication of the Application for Invention |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: CHANGZHOU INNOMACHINING CORPORATION Free format text: FORMER OWNER: ZHANG LIGUO Effective date: 20121212 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 430074 WUHAN, HUBEI PROVINCE TO: 213161 CHANGZHOU, JIANGSU PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20121212 Address after: Wujin District of Jiangsu city in Changzhou province 213161 Chang Wu Road No. 801 Changzhou Science City building room 1111-1126 South Hui research Applicant after: Inno Machining Co., Ltd. Address before: 430074 Hubei Province, Wuhan city Hongshan District Kuanshan Poly Garden Road 2-1-1103 Applicant before: Zhang Liguo |
|
| DD01 | Delivery of document by public notice |
Addressee: Zhang Liguo Document name: Notification of Passing Examination on Formalities |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110615 |