CN109530930A - A method of laser processing chip - Google Patents
A method of laser processing chip Download PDFInfo
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- CN109530930A CN109530930A CN201811607513.3A CN201811607513A CN109530930A CN 109530930 A CN109530930 A CN 109530930A CN 201811607513 A CN201811607513 A CN 201811607513A CN 109530930 A CN109530930 A CN 109530930A
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- laser
- refrigeration mode
- infrared detecting
- detecting chip
- chip
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The present invention provides a kind of method for laser machining chip, comprising: builds laser-processing system by laser, optical element；Obtain the location information of refrigeration mode infrared detecting chip work platform for placing；The machined parameters of laser-processing system are set according to location information, and generate laser processing beam according to machined parameters by laser-processing system；The relative position for changing laser processing beam and refrigeration mode infrared detecting chip, so as to form in the pixel layer on refrigeration mode infrared detecting chip and between edge a closed annular groove.The present invention can uniformly reduce filling glue that pixel layer surrounding is overflowed in the out-of-date traction of pullling to refrigeration mode infrared detecting chip of temperature cycles, and then can eliminate to efficient uniform thermal stress and influence on the positional shift between the photosensitive layer of refrigeration mode infrared detecting chip and epoxy resin layer.
Description
Technical field
The present invention relates to laser micro-machining technology field more particularly to a kind of methods for laser machining chip.
Background technique
Infrared detector either it is civilian or it is military all obtained good application, wherein refrigeration type infrared detector
Performance it is especially brilliant.Infrared detecting chip is often in the environment of high temperature variation in refrigeration type infrared detector, is
Guarantee that its working performance is normal, needs when working condition to carry out liquid nitrogen system to the infrared detecting chip in detector
Cold, temperature at this time is about -200 DEG C, but in the inoperative period, infrared detecting chip is an exposure under atmospheric temperature,
Such as maximum temperature can achieve 70 DEG C or so sometimes in desert, so environment temperature locating for infrared detecting chip be -
It is continually changing between 200 DEG C and 70 DEG C.
The structure of infrared detecting chip is divided into three layers, is followed successively by photosensitive layer, epoxy resin layer, chip circuit from top to bottom
Layer, photosensitive layer material includes mercury cadmium telluride, tellurium cadmium indium etc..Therefore, cadmium mercury telluride layer and epoxy resin layer are closely coupled, due to they
Thermal energy is swollen, and coefficient difference is larger, so under long-term environment temperature acute variation, it is inclined that they are easy to happen position between two layers
It moves.Positional shift caused by this thermal stress repeatedly causes the indium column connecting with cadmium mercury telluride layer to be broken, and the fracture of indium column is so that tellurium
Cadmium mercury layer (photosensitive layer) connect fracture with the chip circuit layer of chip bottom, directly contributes infrared detector and is not available.
The method of reply problem above is to prepare groove in the position close to chip edge at present, and groove can effectively delay
The thermal stress effect between cadmium mercury telluride layer and epoxy resin layer is rushed, influence of the thermal stress to infrared detecting chip structure is reduced.System
The narrower the width of standby groove the better, and depth just extends through bottom chip circuit layer.Traditional groove preparation method is mainly divided
For two major classes: wet etching and dry etching.
Wet etching prepares groove, sample is immersed in certain chemical reagent or reagent solution, makes not against corrosion
That a part of film surface of agent masking occurs chemical reaction with reagent and is removed.The advantages of this method: easy to operate, set
For requiring, low, Etch selectivity is good；Disadvantage: primary need carries out photoetching process to each chip, time-consuming and laborious, the second corrosion antimony
Cadmium mercury and epoxy resin need different corrosive liquids, and etching process is complicated, and precision is low, easy damaged bottom reading circuit.
Dry etching prepares groove, and under low vacuum specific gas environment, gas exists sample with plasmoid, leads to
It crosses the acceleration of electric field, bombards in the region that sample needs to process, plasma can chemically react with specimen material and by sample
The atom of material surface is hit, and achievees the purpose that etching removal.The advantages of dry etching: the first Etch selectivity and anisotropy
Good, the second etched features can accurately control and high resolution；Disadvantage: primary need is time-consuming and laborious to one single chip photoetching, and
Second is that damage bottom reading circuit.
Summary of the invention
The method of laser processing chip provided by the invention, can uniformly reduce the filling glue that pixel layer surrounding is overflowed
In the out-of-date traction of pullling to refrigeration mode infrared detecting chip of temperature cycles, and then thermal stress can be eliminated to efficient uniform to system
Positional shift between the photosensitive layer and epoxy resin layer of cold mould infrared detecting chip influences.
In a first aspect, the present invention provides a kind of method for laser machining chip, comprising:
Laser-processing system is built by laser, optical element；
Obtain the location information of refrigeration mode infrared detecting chip work platform for placing；
The machined parameters of laser-processing system are set according to location information, and are produced by laser-processing system according to machined parameters
Raw laser processing beam；
The relative position for changing laser processing beam and refrigeration mode infrared detecting chip, so that in refrigeration mode infrared acquisition core
A closed annular groove is formed between the pixel layer and edge of on piece.
Optionally, it is described laser-processing system is built by laser, optical element before, the method also includes:
Refrigeration mode infrared detecting chip information is obtained, laser facula is determined according to refrigeration mode infrared detecting chip information；Its
In, the laser facula includes Gaussian spot or flat-top hot spot.
Optionally, after the location information for obtaining refrigeration mode infrared detecting chip work platform for placing, the method
Further include:
Process cavity is established, the processing environment of the process cavity is set；Wherein,
The process cavity is set as vacuum chamber or totally-enclosed non-vacuum chambers or semiclosed chamber.
Optionally, the processing environment of the setting process cavity assists gas so that institute to be passed through into process cavity
It states process cavity and is in low pressure state.
Optionally, the machined parameters of the setting laser-processing system, and produced by laser-processing system according to machined parameters
Giving birth to laser processing beam includes:
Laser processing parameter is determined according to refrigeration mode infrared detecting chip information, groove information；
Corresponding laser processing beam is generated according to laser processing parameter by laser-processing system.
Optionally, the laser processing parameter include laser beam energy, it is repetition rate, pulsewidth, a kind of in optical maser wavelength
Or any combination.
Optionally, the range of the pulsewidth is 10fs-10ps；
Preferably, the optical maser wavelength is 200nm-400nm.
Optionally, the relative position for changing laser processing beam and refrigeration mode infrared detecting chip, so that freezing
Pixel layer on type infrared detecting chip and a closed annular groove is formed between edge include:
The galvanometer in laser-processing system is determined according to refrigeration mode infrared detecting chip information；
The motion profile of laser beam is controlled for each side of refrigeration mode infrared detecting chip according to groove information by the galvanometer
On pixel layer and edge between perform etching into groove, and the groove by being etched on each side forms closed annular groove.
Optionally, the groove information includes groove flute profile, groove width, one or any combination in trench depth.
Optionally, the refrigeration mode infrared detecting chip is followed successively by photosensitive layer, epoxy resin layer, chip circuit under upper
Layer；Wherein,
The trench depth D range is refrigeration mode infrared detecting chip surface photosensitive layer thickness D1 < D < infrared spy of refrigeration mode
Survey chip photosensitive layer thickness D1+ epoxy resin layer thickness D2.
The method of laser processing chip provided in an embodiment of the present invention mainly utilizes laser-processing system to generate laser light
Beam prepares closed annular groove in the pixel layer on refrigeration mode infrared detecting chip and the surface between edge, can utilize laser
Machining beams sharply increase the temperature of photosensitive layer and direct boiling, while controlling laser running track or sample displacement track reality
The existing patterned purpose of refrigeration mode infrared detecting chip surface grooves, wherein carrying out processing using laser-processing system has such as
Under a little: the first laser burst length is short, belongs to " cold working ", and heat-affected zone is small, will not change the characteristic of photosensitive layer；Second
Laser machining process is contactless with refrigeration mode infrared detecting chip to be processed, can reduce mechanical stress to processing object
Damage；Third laser machines high degree of automation, and accuracy is high, and process velocity is fast.
It is followed in addition, the present embodiment the method can also uniformly reduce the filling glue that pixel layer surrounding is overflowed in temperature
The out-of-date traction of pullling to refrigeration mode infrared detecting chip of ring, and then it is infrared to refrigeration mode can to eliminate thermal stress to efficient uniform
Positional shift between the photosensitive layer and epoxy resin layer of detection chip influences, and prevents the indium column connecting with photosensitive layer to be broken, mentions
The service life of high IR detection chip, the narrower the groove width of preparation the better, and depth just extends through bottom chip circuit
Layer.
Meanwhile compared with existing improvement fills glue, fixing layer technology is added, the present embodiment the method does not introduce new
Material does not introduce new structure (refering in particular to add structure as one layer of fixing layer), has no effect on refrigeration mode infrared detecting chip
Original technique in manufacturing process, it is only necessary to be blended together in chip interconnection and a new grooving processes are added after filler.Therefore, originally
Embodiment the method is compared and other methods for improving reliability, research and development at low cost, high-efficient, effect simple with implementation
Good advantage.
Also, show by experimental result, the refrigeration mode infrared detecting chip after laser-processing system is processed,
Pixel layer on refrigeration mode infrared detecting chip and the closed annular ditch through photosensitive layer and sealing water layer is formed between edge
Slot, and the structure of closed annular groove is neatly smooth, does not have residue inside closed annular groove, heat-affected zone is smaller, slot
Around photosensitive layer material without micro-damage and the defects of micro-crack, control processing technology does not damage the chip circuit layer of bottom also, into
And the physical isolation of refrigeration mode infrared detecting chip nucleus Yu periphery Jiao Qiang can be realized based on the closed hoop groove, from
Fundamentally eliminate influence of the thermal stress to chip reliability.
Detailed description of the invention
Fig. 1 is the flow chart for the method that the embodiment of the present invention one laser machines chip；
Fig. 2 is that the closed annular groove structure that the embodiment of the present invention one laser machines on refrigeration mode infrared detecting chip is shown
It is intended to；
Fig. 3 is that the closed annular groove structure that the embodiment of the present invention one laser machines on refrigeration mode infrared detecting chip is shown
It is intended to；
Fig. 4 is the structural schematic diagram for the device that dual-laser of the embodiment of the present invention processes chip；
Fig. 5 is the structural schematic diagram of dual-laser of embodiment of the present invention system of processing；
Fig. 6 is the structural schematic diagram of three dust-extraction unit of the embodiment of the present invention；
Fig. 7 is jet orifice structure schematic diagram set by three workbench of the embodiment of the present invention；
Fig. 8 is the structural schematic diagram of the workbench of three angle adjustable of the embodiment of the present invention；
Fig. 9 is the flow chart for the method that the embodiment of the present invention three laser machines chip；
Figure 10 is the flow chart for the method that the embodiment of the present invention four laser machines chip；
Figure 11 is the flow chart for the method that the embodiment of the present invention four laser machines chip.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
It is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Embodiment one
The embodiment of the present invention provides a kind of method for laser machining chip, as shown in Figure 1, which comprises
S11, laser-processing system is built by laser, optical element；
S12, the location information for obtaining refrigeration mode infrared detecting chip work platform for placing；
S13, the machined parameters that laser-processing system is set according to location information, and joined by laser-processing system according to processing
Number generates laser processing beam；
S14, the relative position for changing laser processing beam and refrigeration mode infrared detecting chip, so that in the infrared spy of refrigeration mode
A closed annular groove is formed between the pixel layer and edge surveyed on chip.
The method of laser processing chip provided in an embodiment of the present invention mainly utilizes laser-processing system to generate laser light
Beam prepares closed annular groove in the pixel layer on refrigeration mode infrared detecting chip and the surface between edge, can utilize laser
Machining beams sharply increase the temperature of photosensitive layer and direct boiling, while controlling laser running track or sample displacement track reality
The existing patterned purpose of refrigeration mode infrared detecting chip surface grooves, wherein carrying out processing using laser-processing system has such as
Under a little: the first laser burst length is short, belongs to " cold working ", and heat-affected zone is small, will not change the characteristic of photosensitive layer；Second
Laser machining process is contactless with refrigeration mode infrared detecting chip to be processed, can reduce mechanical stress to processing object
Damage；Third laser machines high degree of automation, and accuracy is high, and process velocity is fast.
It is followed in addition, the present embodiment the method can also uniformly reduce the filling glue that pixel layer surrounding is overflowed in temperature
The out-of-date traction of pullling to refrigeration mode infrared detecting chip of ring, and then it is infrared to refrigeration mode can to eliminate thermal stress to efficient uniform
Positional shift between the photosensitive layer and epoxy resin layer of detection chip influences, and prevents the indium column connecting with photosensitive layer to be broken, mentions
The service life of high IR detection chip, the narrower the groove width of preparation the better, and depth just extends through bottom chip circuit
Layer.
Meanwhile compared with existing improvement fills glue, fixing layer technology is added, the present embodiment the method does not introduce new
Material does not introduce new structure (refering in particular to add structure as one layer of fixing layer), has no effect on refrigeration mode infrared detecting chip
Original technique in manufacturing process, it is only necessary to be blended together in chip interconnection and a new grooving processes are added after filler.Therefore, originally
Embodiment the method is compared and other methods for improving reliability, research and development at low cost, high-efficient, effect simple with implementation
Good advantage.
Also, show by experimental result, the refrigeration mode infrared detecting chip after laser-processing system is processed,
Pixel layer on refrigeration mode infrared detecting chip and the closed annular ditch through photosensitive layer and sealing water layer is formed between edge
Slot, and the structure of closed annular groove is neatly smooth, does not have residue inside closed annular groove, heat-affected zone is smaller, slot
Around photosensitive layer material without micro-damage and the defects of micro-crack, control processing technology does not damage the chip circuit layer of bottom also, into
And the physical isolation of refrigeration mode infrared detecting chip nucleus Yu periphery Jiao Qiang can be realized based on the closed hoop groove, from
Fundamentally eliminate influence of the thermal stress to chip reliability.
Optionally, as shown in Fig. 2, optionally, it is described laser-processing system is built by laser, optical element before,
The method also includes:
Refrigeration mode infrared detecting chip information is obtained, laser facula is determined according to refrigeration mode infrared detecting chip information；Its
In, the laser facula includes Gaussian spot or flat-top hot spot.
For example, the present embodiment the method can be according to the chip structure, photosensitive in refrigeration mode infrared detecting chip information
Laser facula needed for layer material, chip manufacture demand free switching is processed；Wherein, the photosensitive layer material includes tellurium cadmium
Mercury, tellurium cadmium indium.
Optionally, after the location information for obtaining refrigeration mode infrared detecting chip work platform for placing, the method
Further include:
Process cavity is established, the processing environment of the process cavity is set；Wherein,
The process cavity is set as vacuum chamber or totally-enclosed non-vacuum chambers or semiclosed chamber.
Optionally, the processing environment of the setting process cavity assists gas so that institute to be passed through into process cavity
It states process cavity and is in low pressure state.
Specifically, the present embodiment the method by being passed through auxiliary gas into process cavity, on the one hand makes described add
Work chamber is in low pressure state, and the impurity that laser and a variety of materials effect generate effectively is blowed to the dead space of chip
Domain；Another aspect epoxy resin quickly reacts generation CO2 with the oxygen in auxiliary gas and discharges into the atmosphere, and then reduces and swash
Light mismachining tolerance.
Optionally, the machined parameters of the setting laser-processing system, and produced by laser-processing system according to machined parameters
Giving birth to laser processing beam includes:
Laser processing parameter is determined according to refrigeration mode infrared detecting chip information, groove information；
Corresponding laser processing beam is generated according to laser processing parameter by laser-processing system.
Optionally, the laser processing parameter include laser beam energy, it is repetition rate, pulsewidth, a kind of in optical maser wavelength
Or any combination.
Optionally, the range of the pulsewidth is 10fs-10ps；
Preferably, the optical maser wavelength is 200nm-400nm.
Optionally, the relative position for changing laser processing beam and refrigeration mode infrared detecting chip, so that freezing
Pixel layer on type infrared detecting chip and a closed annular groove is formed between edge include:
The galvanometer in laser-processing system is determined according to refrigeration mode infrared detecting chip information；
The motion profile of laser beam is controlled for each side of refrigeration mode infrared detecting chip according to groove information by the galvanometer
On pixel layer and edge between perform etching into groove, and the groove by being etched on each side forms closed annular groove.
Optionally, the groove information includes groove flute profile, groove width, one or any combination in trench depth.
Optionally, the refrigeration mode infrared detecting chip is followed successively by photosensitive layer, epoxy resin layer, chip circuit under upper
Layer；Wherein,
The trench depth D range is refrigeration mode infrared detecting chip surface photosensitive layer thickness D1 < D < infrared spy of refrigeration mode
Survey chip photosensitive layer thickness D1+ epoxy resin layer thickness D2.
Specifically, the present embodiment the method between the pixel layer and edge of refrigeration mode infrared detecting chip by processing
One closed annular groove, and the trench depth is to penetrate refrigeration mode pyroscan material layer, but do not reach chip electricity
Road floor does not damage the chip circuit layer of bottom while utmostly eliminating thermal stress.
Embodiment two
The embodiment of the present invention provides a kind of device for laser machining chip, and as shown in Figures 2 to 4, described device includes:
Workbench, for placing refrigeration mode infrared detecting chip to be processed；
Control system, for obtaining the location information of refrigeration mode infrared detecting chip work platform for placing, then according to position
The machined parameters of laser-processing system are arranged in information, and control laser-processing system and generate laser processing light according to machined parameters
Beam；
Laser-processing system is built and is formed by laser, beam-expanding collimation element, galvanometer, swashs for emit laser
Light machining beams are expanded through beam-expanding collimation element, are collimated, and then change laser processing beam and refrigeration mode by galvanometer again
The relative position of infrared detecting chip, so as to form in the pixel layer on refrigeration mode infrared detecting chip and between edge a closure
Ring-shaped groove.
Mainly pass through laser-processing system generates laser light to the device of laser processing chip provided in an embodiment of the present invention
Beam prepares closed annular groove in the pixel layer on refrigeration mode infrared detecting chip and the surface between edge, can utilize and swash
Light machining beams sharply increase the temperature of photosensitive layer and direct boiling, while controlling laser running track or sample displacement track
Realize the patterned purpose of refrigeration mode infrared detecting chip surface grooves, wherein carrying out processing using laser-processing system has
As follows a little: the first laser burst length is short, belongs to " cold working ", and heat-affected zone is small, will not change the characteristic of photosensitive layer；The
Dual-laser machining process is contactless with refrigeration mode infrared detecting chip to be processed, can reduce mechanical stress to processing pair
The damage of elephant；Third laser machines high degree of automation, and accuracy is high, and process velocity is fast.
It is followed in addition, the present embodiment the method can also uniformly reduce the filling glue that pixel layer surrounding is overflowed in temperature
The out-of-date traction of pullling to refrigeration mode infrared detecting chip of ring, and then it is infrared to refrigeration mode can to eliminate thermal stress to efficient uniform
Positional shift between the photosensitive layer and epoxy resin layer of detection chip influences, and prevents the indium column connecting with photosensitive layer to be broken, mentions
The service life of high IR detection chip, the narrower the groove width of preparation the better, and depth just extends through bottom chip circuit
Layer.
Meanwhile compared with existing improvement fills glue, fixing layer technology is added, the present embodiment described device does not introduce new
Material does not introduce new structure (refering in particular to add structure as one layer of fixing layer), has no effect on refrigeration mode infrared detecting chip
Original technique in manufacturing process, it is only necessary to be blended together in chip interconnection and a new grooving processes are added after filler.Therefore, originally
Embodiment described device is compared and other methods for improving reliability, research and development at low cost, high-efficient, effect simple with implementation
Good advantage.
Also, show by experimental result, the refrigeration mode infrared detecting chip after laser-processing system is processed,
Pixel layer on refrigeration mode infrared detecting chip and the closed annular ditch through photosensitive layer and sealing water layer is formed between edge
Slot, and the structure of closed annular groove is neatly smooth, does not have residue inside closed annular groove, heat-affected zone is smaller, slot
Around photosensitive layer material without micro-damage and the defects of micro-crack, control processing technology does not damage the chip circuit layer of bottom also, into
And the physical isolation of refrigeration mode infrared detecting chip nucleus Yu periphery Jiao Qiang can be realized based on the closed hoop groove, from
Fundamentally eliminate influence of the thermal stress to chip reliability.
Preferably, at least one laser is set in the laser-processing system, for according to refrigeration mode infrared acquisition core
The control of piece information is switched to various lasers and launches the laser beam of different wave length, and then improves the laser-processing system
Processing efficiency.
Optionally, as shown in Figures 2 to 5, the control system includes:
Subsystem is detected, obtains groove information for detecting；Wherein, the groove information includes groove flute profile, ditch groove width
One or any combination in degree, trench depth；
Host computer, for according to refrigeration mode infrared detecting chip information to be processed and through acquired in detection subsystem
Groove information determines laser processing parameter；Then control laser-processing system generates corresponding laser according to laser processing parameter and adds
Work light beam.
Optionally, the host computer includes:
First determining module, for according to refrigeration mode infrared detecting chip information to be processed and through detecting subsystem institute
The groove information or detection and localization information or Working position location information of acquisition determine laser processing parameter；
Second determining module, for determining the galvanometer in laser-processing system according to refrigeration mode infrared detecting chip information；
Control module, for controlling the motion profile of laser beam for refrigeration mode infrared acquisition according to groove information through galvanometer
Groove is performed etching between pixel layer and edge on each side of chip, and the groove by being etched on each side forms closed annular
Groove.
Optionally, described device further include:
Coaxial detection system, for being positioned to the Cutting Road on refrigeration mode infrared detecting chip and generating detection and localization
Information；
Paraxonic detection system, positioned for Working position of the galvanometer on refrigeration mode infrared detecting chip and generate plus
Station sets detection information；Wherein,
The host computer is according to groove information, detection and localization information, Working position detection information control laser beam to system
Each side outer of cold mould infrared detecting chip corresponds to the direction XY and keeps same predetermined direction and perform etching into ditch immediately below galvanometer
Slot simultaneously forms closed annular groove, wherein the refrigeration mode infrared detecting chip it is each while outer be it is each while on pixel layer and edge
Between position.
Optionally, the refrigeration mode infrared detecting chip is followed successively by photosensitive layer, epoxy resin layer, chip circuit under upper
Layer；Wherein,
The trench depth D range is refrigeration mode infrared detecting chip surface photosensitive layer thickness D1 < D < infrared spy of refrigeration mode
Survey chip photosensitive layer thickness D1+ epoxy resin layer thickness D2.
Optionally, the laser-processing system further include:
Shaping element, for laser processing beam to be shaped as laser light corresponding with refrigeration mode infrared detecting chip type
Spot；Wherein, the laser facula includes Gaussian spot or flat-top hot spot.
Preferably, the laser-processing system further include:
Vertical displacement element, in the mobile galvanometer of vertical direction.
Specifically, the present embodiment described device can be according to the chip structure in refrigeration mode infrared detecting chip information, sense
Laser facula needed for photosphere material, chip manufacture demand control shaping element free switching is processed；Wherein, described photosensitive
Layer material includes mercury cadmium telluride, tellurium cadmium indium.
Optionally, the laser-processing system further include:
Beam splitter, for being detected to the laser processing beam shaping state after shaped component shaping.
Optionally, as shown in Figure 6 to 8, described device further include:
Dust-extraction unit is arranged between laser-processing system and workbench and establishes a process cavity on the table, uses
In be passed through gas into the process cavity so that the process cavity be in low pressure state and utilize process cavity and atmosphere
Generated dust is sucked out draught head between pressure.
Specifically, dust-extraction unit described in the present embodiment is on the one hand made by being passed through auxiliary gas into process cavity
The process cavity is in low pressure state, and the impurity that laser and a variety of materials effect generate effectively is blowed to the nothing of chip
Imitate region；Another aspect epoxy resin quickly reacts generation CO2 with the oxygen in auxiliary gas and discharges into the atmosphere, and then subtracts
Small laser processing error.
Optionally, the laser processing parameter include laser beam energy, it is repetition rate, pulsewidth, a kind of in optical maser wavelength
Or any combination；
Preferably, the range of the pulsewidth is 20fs-100ps；
Preferably, the optical maser wavelength is 200nm-600nm.
Optionally, as shown in figure 8, the workbench is the workbench of angle adjustable, so that laser-processing system is to refrigeration
Pixel layer on type infrared detecting chip and inclination is carried out between edge processing and form the small angle shallow trench in edge.
Shown in sum up, the present embodiment described device is by laser beam in laser-processing system by laser with direction of travel
0 ° of injection, reflexes on beam-expanding collimation element through reflecting mirror 1 and expands laser beam, then using beam splitter to laser light
Beam laser energy, laser status are detected, and laser beam is reflected on reflecting mirror 2 with 90 ° of directions；By reflecting
2 reflection laser light beam of mirror, laser beam is with 90 ° of direction reflections on reflecting mirror 3；By 3 reflection laser light beam of reflecting mirror, laser
Light beam is with -90 ° of direction reflections on reflecting mirror 4, and by 4 reflection laser light beam of reflecting mirror, laser beam is existed with 90 ° of direction reflections
On shaping element, then the laser beam shaping state after shaped component shaping is detected through antiradar reflectivity beam splitter,
Then laser beam is exposed into galvanometer, Working position is positioned and monitored on-line using paraxonic detection system；Finally
Laser beam focusing is cut to the refrigeration mode infrared detecting chip being fixed on the worktable.
The device of the present embodiment can be used for executing the technical solution of above method embodiment, realization principle and technology
Effect is similar, and details are not described herein again.
Embodiment three
Since ultra-short pulse laser mainly passes through Multiphoton Absorbtion mechanism to the cutting of infrared semiconductor material and is subject to reality
It is existing, the generation of dust and smog etc. is often accompanied by during plasma Composite.A large amount of sucking dust and generated gas are not only right
Human body is harmful, also brings baneful influence to mechanical and optic path, laser activity etc., therefore to the nuisance that these are additionally generated
Matter is efficiently removed.
The embodiment of the present invention provides a kind of device for laser machining chip, as shown in fig. 6, described device includes:
Workbench, for placing refrigeration mode infrared detecting chip to be processed；
Dust-extraction unit is arranged between laser-processing system and workbench and establishes a process cavity on the table, uses
In auxiliary gas is passed through into the process cavity so that the process cavity be in low pressure state and using process cavity and
Generated dust is sucked out draught head between atmospheric pressure；
Control system, for obtaining the location information of refrigeration mode infrared detecting chip work platform for placing, then according to position
The machined parameters of laser-processing system are arranged in information, and control laser-processing system and generate laser processing light according to machined parameters
Beam；
Laser-processing system is built and is formed by laser, beam-expanding collimation element, galvanometer, swashs for emit laser
Light light beam is expanded through beam-expanding collimation element, is collimated, and then changes laser processing beam by galvanometer again and refrigeration mode is infrared
The relative position of detection chip, so as to form in the pixel layer on refrigeration mode infrared detecting chip and between edge a closed annular
Groove.
The device of laser processing chip provided in an embodiment of the present invention is mainly by the same of irradiation laser processing beam
When reduce the dust-extraction unit that is set between galvanometer and machine table and establish a process cavity, and assist gas in the process cavity
Body nozzle set from dust-extraction unit sprays, and by auxiliary gas will laser machine caused by gas and slag dispel,
Simultaneously process cavity top generate certain negative pressure will be with sediment and fume absorbent to machine outside, and pass through pipe special turn
It moves on to process chamber and realizes cleaning.The present embodiment described device can not only blow and negative-pressure adsorption by way of will be in slot or slot
Impurity of edge etc. is removed, and is effectively reduced these impurity in the accumulation of chip, is reduced subsequent cleaning step, reduce cleaning
Difficulty.The dust generated in laser processing post plasma recombination process can also be effectively reduced simultaneously and smog is effective in chip
Region accumulation, thus caused by potentiality injure.
Optionally, as shown in Fig. 2 to Fig. 4 and Fig. 6 to Fig. 8, the dust-extraction unit includes:
Chamber is isolated, be arranged between laser-processing system and workbench and isolates a process cavity；
Scavenger system is arranged in process cavity, and for being passed through auxiliary gas into process cavity, to add laser
Gas caused by work system process and slag dispel；
Suction system is arranged in process cavity, and for spraying compressed air by jet pipe high speed, in nozzle exit shape
It at jet stream, generates volume and inhales flowing, under Involving velocity, the air around nozzle exit is constantly sucked away, so that processing
The indoor pressure of chamber is down to the process cavity of atmospheric pressure certain vacuum degree formed below.
Specifically, can be blown by scavenger system will be produced a large amount of in laser processing procedure for the present embodiment described device
Impurity removal, then discharged it by suction system；And the air blowing removal of impurity can also prevent impurity inside Cutting Road
Accumulation, to influence processing effect.
Optionally, the workbench is provided with spray orifice as nozzle exit, and connects with the jet pipe being arranged in below workbench
It connects.
Specifically, as shown in fig. 6, dust-extraction unit described in the present embodiment designs a kind of move using vacuum generator principle
Formula is efficiently directed at process cavity.Using jet pipe high speed injection compressed air, jet stream is formed in nozzle exit, volume is generated and inhales flowing,
Under Involving velocity, so that the air around nozzle exit is constantly sucked away, the pressure in adsorbent chamber is made to be down to atmospheric pressure
Hereinafter, forming certain vacuum degree.By hydrodynamics it is found that for incompressible air gas (gas low speed into, can approximation recognize
To be incompressible air) continuity equation:
A1ν1=A2ν2
A in formula1: nozzle section area；A2: diffusion chamber area of section, unit: m2；v1: nozzle air current flow velocity, v2: diffusion chamber
Air-flow velocity, unit: m/s.From the above equation, we can see that section increases, flow velocity reduces；Section reduces, and flow velocity increases.
For horizontal pipeline, by the Bai Nuli ideal capacity equation of incompressible air are as follows:
P in formula1, P2: section A1, A2Locate corresponding pressure, unit: Pa；v1, v2: section A1, A2Locate corresponding flow velocity, it is single
Position: m/s；ρ: the density of air, unit: kg/m3。
From the above equation, we can see that flow velocity increases, v is worked as in pressure reduction2>>v1When, P1>>P2.Work as v2Increase to certain value, P2It will be small
In an atmospheric pressure, i.e. generation negative pressure, therefore negative pressure can be obtained with increase flow velocity, generate suction.
Optionally, benchmark backboard and angular adjustment module are additionally provided on the workbench；Wherein, refrigeration mode infrared acquisition
Chip is placed in angular adjustment module, and red to refrigeration mode by the way that the angular adjustment module that each Bian Shangke is freely lifted is arranged in
Outer detection chip carries out angle adjustment.
Optionally, the process cavity includes the protection eyeglass that top is arranged in, is set to the seal bootr of side and sets
Set the scrub-brush below seal bootr.
Specifically, dust-extraction unit described in the present embodiment is between seal bootr and workbench also by being arranged dense scrub-brush,
On the basis of not destruction work platform, increase air pressure in locking device to greatest extent.
Optionally, the scavenger system includes blowing at least one nozzle towards the gassing pipe of Working position, setting
Control valve in feed channel and the gas storage equipment being connect with the gassing pipe other end.
Specifically, auxiliary gas described in the present embodiment is the nitrogen oxygen mixed gas of preset ratio, wherein the preset ratio
Nitrogen oxygen mixed gas it is corresponding with refrigeration mode infrared detecting chip information, groove information, by being passed through a certain proportion of oxygen
The processing efficiency for improving laser-processing system, cools down to machining area and at the same time being passed through a certain proportion of nitrogen；Effectively
Raising processing efficiency and yields.
The embodiment of the present invention also provides a kind of method for laser machining chip, as shown in Figure 9, which comprises
S21, laser-processing system is built by laser, beam-expanding collimation element, galvanometer；
S22, it reduces dust-extraction unit and establishes a process cavity on the table；
Gas is passed through in S23, Xiang Suoshu process cavity so that the process cavity is in low pressure state and utilizes processing
Generated dust is sucked out draught head between chamber and atmospheric pressure；
S24, the location information for obtaining refrigeration mode infrared detecting chip work platform for placing, are then arranged according to location information and swash
The machined parameters of light system of processing, and laser processing beam is generated according to machined parameters by laser-processing system；
S25, the relative position for changing laser processing beam and refrigeration mode infrared detecting chip by galvanometer, so that freezing
Pixel layer on type infrared detecting chip and a closed annular groove is formed between edge.
The method of laser processing chip provided in an embodiment of the present invention is mainly by the same of irradiation laser processing beam
When reduce the dust-extraction unit that is set between galvanometer and machine table and establish a process cavity, and assist gas in the process cavity
Body nozzle set from dust-extraction unit sprays, and by auxiliary gas will laser machine caused by gas and slag dispel,
Simultaneously process cavity top generate certain negative pressure will be with sediment and fume absorbent to machine outside, and pass through pipe special turn
It moves on to process chamber and realizes cleaning.The present embodiment the method can not only blow and negative-pressure adsorption by way of will be in slot or slot
Impurity of edge etc. is removed, and is effectively reduced these impurity in the accumulation of chip, is reduced subsequent cleaning step, reduce cleaning
Difficulty.The dust generated in laser processing post plasma recombination process can also be effectively reduced simultaneously and smog is effective in chip
Region accumulation, thus caused by potentiality injure.
Optionally, as shown in Fig. 2 to Fig. 4 and Fig. 6 to Fig. 9, the reduction dust-extraction unit simultaneously establishes one on the table
Before process cavity, the method also includes:
The first spray orifice being set on workbench is opened, refrigeration mode infrared acquisition to be processed on the table is placed in absorption
Chip；
Alternatively, opening the spray orifice being set on workbench with the first power, system to be processed on the table is placed in absorption
Cold mould infrared detecting chip.
Optionally, described to be passed through gas into the process cavity so that the process cavity is in low pressure state and benefit
Include: by the suction of generated dust with the draught head between process cavity and atmospheric pressure
In the process cavity isolated by isolation chamber, starting scavenger system is passed through auxiliary gas into process cavity,
Gas caused by laser-processing system process and slag to be dispelled；
The second spray orifice being set on workbench is opened, by jet pipe high speed injection compressed air, is formed in nozzle exit
Jet stream generates volume and inhales flowing, under Involving velocity, the air around nozzle exit is constantly sucked away, so that processing cavity
Indoor pressure is down to the process cavity of atmospheric pressure certain vacuum degree formed below；
Alternatively, opening the spray orifice being set on workbench with the second power, by jet pipe high speed injection compressed air, spraying
Pipe exports to form jet stream, generates volume and inhales flowing, under Involving velocity, the air around nozzle exit is constantly sucked away,
So that the indoor pressure of processing cavity is down to the process cavity of atmospheric pressure certain vacuum degree formed below.
Optionally, first power is less than the second power.
Specifically, in the present embodiment the method when the suction system be provided on the table it is to be processed for adsorbing
Second spray orifice of the first spray orifice of refrigeration mode infrared detecting chip and the process cavity for being used to form certain vacuum degree；
Alternatively, one group of spray orifice being arranged on the table when the suction system while to be used to adsorb refrigeration mode to be processed red
Outer detection chip and the process cavity for being used to form certain vacuum degree；Then worked by control spray orifice with the first power to realize and inhale
Attached refrigeration mode infrared detecting chip function to be processed to form the process cavity function of certain vacuum degree with the second power to realize；
And first power less than the second power.
Optionally, the starting scavenger system is passed through auxiliary gas into process cavity, to add laser-processing system
Gas caused by work process and slag, which dispel, includes:
Unilateral gassing pipe in starting scavenger system is passed through auxiliary gas into process cavity, will laser machine system
Gas caused by system process and slag dispel；
Whether detection negative-pressure adsorption power reaches preset value；
When negative-pressure adsorption power reaches preset value, then continue to be passed through auxiliary gas into process cavity from unilateral gassing pipe
Body, to dispel gas caused by laser-processing system process and slag；
When negative-pressure adsorption power is not up to preset value, then while starting the two sides gassing pipe in scavenger system to processing cavity
Auxiliary gas is passed through in room, to dispel gas caused by laser-processing system process and slag.
For example, the present embodiment the method is in accordance with the following steps:
Refrigeration mode infrared detecting chip is placed on workbench, opens the spray orifice of workbench for refrigeration mode infrared detecting chip
It is sucked；
Whether detection refrigeration mode infrared detecting chip is sucked, if refrigeration mode infrared detecting chip is sucked, is increased
The power of spray orifice；Alternatively, the second spray orifice of starting；Then it performs the next step；
If refrigeration mode infrared detecting chip is not sucked, perform the next step；
Mobile refrigeration mode infrared detecting chip position and angle, it is ensured that channel is located at galvanometer underface and entirely channel and swashs
The laser facula plane of incidence of light machining beams is in a horizontal position；
Decline scavenger system and isolation chamber；
The location information for obtaining refrigeration mode infrared detecting chip work platform for placing determines it in predetermined position, starting and refrigeration
The control valve of the equidirectional gassing pipe in type infrared detecting chip effective coverage, opens simultaneously suction system；
Unilateral gassing pipe in starting scavenger system is passed through auxiliary gas into process cavity, will laser machine system
Gas caused by system process and slag dispel；
Whether detection negative-pressure adsorption power reaches preset value；
When negative-pressure adsorption power reaches preset value, then continue to be passed through auxiliary gas into process cavity from unilateral gassing pipe
Body, to dispel gas caused by laser-processing system process and slag；
When negative-pressure adsorption power is not up to preset value, then while starting the two sides gassing pipe in scavenger system to processing cavity
Auxiliary gas is passed through in room, to dispel gas caused by laser-processing system process and slag；
Control galvanometer completes the laser processing of entire channel, is then turned off control valve and suction system；
It is moved to next axis, determines that channel is located at refrigeration mode infrared detecting chip position, starting and the infrared spy of refrigeration mode
The control valve for surveying the equidirectional gassing pipe in chip effective coverage, opens simultaneously suction system.
The method of the present embodiment can be used for executing the technical solution of above-mentioned apparatus embodiment, realization principle and technology
Effect is similar, and details are not described herein again.
Example IV
When the difference of the present embodiment and above-described embodiment is to refrigeration mode infrared detecting chip fluting, due to the Gauss used
Laser facula fluting meeting of type distribution causes so that groove depth is uncontrollable, and is easy to hurt the chip circuit layer positioned at bottom
Refrigeration mode infrared detecting chip damages after laser slotting.Therefore, the embodiment of the present invention also provides a kind of laser processing core
The method of piece, as shown in Figure 10, which comprises
S31, laser-processing system is built by laser, shaping element, galvanometer, field flattening lens；
S32, refrigeration mode infrared detecting chip information and the groove to be processed on refrigeration mode infrared detecting chip are obtained
Flute profile information；
S33, laser processing beam in laser-processing system is determined according to refrigeration mode infrared detecting chip information, flute profile information
Laser facula；
S34, laser processing beam is shaped as corresponding laser facula by adjusting shaping element, and is irradiated by laser facula
To refrigeration mode infrared detecting chip surface, so as to form in the pixel layer on refrigeration mode infrared detecting chip and between edge one and close
Close ring-shaped groove.
The method of laser processing chip provided in an embodiment of the present invention in laser-processing system mainly by joined
For Gaussian spot to be shaped as to the shaping element of flat-top hot spot, circular Gaussian hot spot is shaped as required geometric form in focal point
The flat-top hot spot of shape, and high power laser is used, to realize the refrigeration mode infrared detecting chip table of smaller angle, deeper slot
Face fluting effect.
Meanwhile shaping element is corresponded into focal position and uses field flattening lens focal length consistent with optical path, and in field flattening lens
Focal position may be implemented Gaussian spot and be converted to flat-top hot spot, it is preferable that focal length is greater than 100mm.Through the experimental results showed that, institute
The closed annular groove structure angle of method processing is stated lower than 10 °, and the small angle shallow trench in edge, groove is square trench, and
The position within preparation sample edge 200um, positioning accuracy are ± 5um.Therefore, the present embodiment the method is by swashing
Shaping element is added in light system of processing, and processes to realize small angle deep trench effect simultaneously plus high power laser.Separately
Outside, the shaping element can be DOE (diffraction optical element), be also possible to SLM (spatial light modulator).
Optionally, as shown in Figure 10 and Figure 11, the laser facula include rectangular flat-top hot spot, it is circular flat hot spot, ellipse
One or any combination in circle flat-top hot spot, diamond shape flat-top hot spot.
Optionally, the flute profile information includes groove flute profile, groove width, one or any combination in trench depth.
Optionally, laser processing beam is shaped as by adjusting shaping element described after corresponding laser facula, institute
State method further include:
Processing is carried out to the photosensitive layer of refrigeration mode infrared detecting chip by the laser facula with the first power and forms two
Parallel slot；Then by having the laser facula of the second power between two parallel slots to refrigeration mode infrared detecting chip inner loop
Oxygen resin layer is processed.
Optionally, described by answering laser facula to carry out the photosensitive layer of refrigeration mode infrared detecting chip with the first power
Processing forms two parallel slots；Then by having the laser facula of the second power between two parallel slots to the infrared spy of refrigeration mode
It surveys chip interior epoxy resin layer and process and include:
Refrigeration mode infrared detecting chip position and angle are adjusted, so as to be located at immediately below galvanometer to paddle-tumble, and entirely wait draw
Slot is in a horizontal position with the laser facula plane of incidence；
Mobile galvanometer is by the two beam first laser hot spots with the first power simultaneously to the photosensitive of infrared detector chip
Layer carries out processing and forms two parallel slots；Alternatively, mobile galvanometer is distinguished by a branch of first laser hot spot with the first power
Processing is carried out to the photosensitive layer of infrared detector chip and forms two parallel slots；
Restore the work-table of placement refrigeration mode infrared detecting chip to initial position, keeps refrigeration mode infrared detecting chip
It is horizontal；
Then move galvanometer by with the second power a branch of second laser hot spot machining beams two parallel slots it
Between epoxy resin layer inside refrigeration mode infrared detecting chip is processed so that the pixel on refrigeration mode infrared detecting chip
A closed annular groove is formed between layer and edge.
Optionally, first power is greater than the second power.
Optionally, first power is greater than 300mw:
Preferably, second power bracket is 80mW-150mW.
Optionally, the laser facula width is 8um-12um.
Specifically, the present embodiment the method is in order to which the cold and hot variation of further dispensing device is in refrigeration mode infrared detecting chip
Higher-wattage is used between effective pixel layer and edge and the two beam laser processing beams with corresponding laser facula are along discharge
Groove both sides process the photosensitive layer of refrigeration mode infrared detecting chip, later using small-power and with corresponding laser facula
Beam of laser machining beams chip interior epoxy resin layer is removed, to realize the smooth effect of slot bottom.For example, making
With the first power and have the laser processing beam of corresponding laser facula first by 8-10 microns of mercury cadmium telluride or 12-15 microns
Indium antimonide layer cuts (i.e. photosensitive layer), then passes through the second power and have the laser processing beam of corresponding laser facula flat at two
The epoxy adhesive layer of 10 microns is reached into 8 microns positions between row slot, thus the stress release effect being optimal, due to
The laser ablation rate for removing film layer material is different, is difficult to obtain relatively flat cell bottom structure with single cutting mode；Cause
This, the present embodiment the method is acted on by larger laser power on channel both sides, by the cadmium mercury telluride layer or indium antimonide on surface
Layer completely removes, and also realizes the cutting of certain depth in epoxy adhesive layer, finally uses the laser of smaller energy by internal ring
Oxygen glue-line is tied, and then the present embodiment the method uses difference by realizing for the layered structure of refrigeration mode infrared detecting chip
Energy laser combination obtains different trench structures, and the present embodiment the method has by improving the groove bathtub construction prepared
It is further to optimize refrigeration mode infrared detecting chip performance, mention to the fuel factor region of groove when effect control laser processing procedure
The yields of height preparation.
Optionally, the refrigeration mode infrared detecting chip is followed successively by photosensitive layer, epoxy resin layer, chip circuit under upper
Layer；Wherein,
The trench depth D range is refrigeration mode infrared detecting chip surface photosensitive layer thickness D1 < D < infrared spy of refrigeration mode
Survey chip photosensitive layer thickness D1+ epoxy resin layer thickness D2.
Optionally, the laser pulse range is 7ps-20ps；
Preferably, the process velocity of laser-processing system is to be less than 5000mm/s greater than 3000mm/s.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by those familiar with the art, all answers
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (10)
1. a kind of method for laser machining chip characterized by comprising
Laser-processing system is built by laser, optical element；
Obtain the location information of refrigeration mode infrared detecting chip work platform for placing；
The machined parameters of laser-processing system are set according to location information, and is generated and is swashed according to machined parameters by laser-processing system
Light machining beams；
The relative position for changing laser processing beam and refrigeration mode infrared detecting chip, so that on refrigeration mode infrared detecting chip
Pixel layer and edge between form a closed annular groove.
2. the method according to claim 1, wherein building laser processing by laser, optical element described
Before system, the method also includes:
Refrigeration mode infrared detecting chip information is obtained, laser facula is determined according to refrigeration mode infrared detecting chip information；Wherein, institute
Stating laser facula includes Gaussian spot or flat-top hot spot.
3. method according to claim 1 or 2, which is characterized in that placed in the acquisition refrigeration mode infrared detecting chip
After the location information of workbench, the method also includes:
Process cavity is established, the processing environment of the process cavity is set；Wherein,
The process cavity is set as vacuum chamber or totally-enclosed non-vacuum chambers or semiclosed chamber.
4. according to the method described in claim 3, it is characterized in that, the processing environment of the setting process cavity is to adding
Auxiliary gas is passed through in work chamber so that the process cavity is in low pressure state.
5. method according to claim 1 to 4, which is characterized in that the processing ginseng of the setting laser-processing system
Number, and generate laser processing beam according to machined parameters by laser-processing system and include:
Laser processing parameter is determined according to refrigeration mode infrared detecting chip information, groove information；
Corresponding laser processing beam is generated according to laser processing parameter by laser-processing system.
6. according to the method described in claim 5, it is characterized in that, the laser processing parameter includes laser beam energy, again
Complex frequency, pulsewidth, one or any combination in optical maser wavelength.
7. according to the method described in claim 6, it is characterized in that, the range of the pulsewidth is 10fs-10ps；
Preferably, the optical maser wavelength is 200nm-400nm.
8. -7 any method according to claim 1, which is characterized in that the change laser processing beam and refrigeration mode are red
The relative position of outer detection chip, so as to form in the pixel layer on refrigeration mode infrared detecting chip and between edge a close ring
Shape groove includes:
The galvanometer in laser-processing system is determined according to refrigeration mode infrared detecting chip information；
It will be on each side of refrigeration mode infrared detecting chip according to the motion profile that groove information controls laser beam by the galvanometer
Groove is performed etching between pixel layer and edge, and the groove by being etched on each side forms closed annular groove.
9. according to the method described in claim 8, it is characterized in that, the groove information includes groove flute profile, groove width, ditch
One or any combination in groove depth.
10. -9 any method according to claim 1, which is characterized in that the refrigeration mode infrared detecting chip from it is upper it
Under be followed successively by photosensitive layer, epoxy resin layer, chip circuit layer；Wherein,
The trench depth D range is refrigeration mode infrared detecting chip surface photosensitive layer thickness D1 < D < refrigeration mode infrared acquisition core
Piece photosensitive layer thickness D1+ epoxy resin layer thickness D2.
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| CN102773612A (en) * | 2012-06-07 | 2012-11-14 | 江阴德力激光设备有限公司 | Vibrating mirror type ultraviolet laser cutting wafer chip device and method thereof |
| CN102916081A (en) * | 2012-10-19 | 2013-02-06 | 张立国 | Edge deletion method for thin-film solar cells |
| CN103586586A (en) * | 2013-10-22 | 2014-02-19 | 苏州镭明激光科技有限公司 | Pulse laser etching device used for transparent electroconductive thin film and control method of pulse laser etching device |
| US20150123354A1 (en) * | 2013-11-01 | 2015-05-07 | VACUTEC Hochvakuum- & Präzisionstechnik GmbH | Sealing surface, in particular for a vacuum chamber of a mass spectrometer and method of manufacturing such a sealing surface |
| CN104377280A (en) * | 2014-11-14 | 2015-02-25 | 江苏鑫博电子科技有限公司 | Method for manufacturing groove structure in substrate wafer |
| CN105215556A (en) * | 2015-09-25 | 2016-01-06 | 江苏秦拓微电子设备科技有限公司 | The new technology that laser cuts film is carried out to the various films that crystal column surface pastes |
| CN107214420A (en) * | 2017-07-14 | 2017-09-29 | 中国科学院微电子研究所 | Method and device for processing wafer by laser |
| CN107414309A (en) * | 2017-07-14 | 2017-12-01 | 中国科学院微电子研究所 | Method and device for processing wafer by laser |
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