CN102096035B - Thermal cycling load test system for diode - Google Patents
Thermal cycling load test system for diode Download PDFInfo
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- CN102096035B CN102096035B CN 201010553197 CN201010553197A CN102096035B CN 102096035 B CN102096035 B CN 102096035B CN 201010553197 CN201010553197 CN 201010553197 CN 201010553197 A CN201010553197 A CN 201010553197A CN 102096035 B CN102096035 B CN 102096035B
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- 238000012360 testing method Methods 0.000 title claims abstract description 63
- 238000005382 thermal cycling Methods 0.000 title abstract description 8
- 230000001052 transient effect Effects 0.000 claims abstract description 31
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 238000012544 monitoring process Methods 0.000 claims abstract description 4
- 238000004891 communication Methods 0.000 claims description 20
- 230000005855 radiation Effects 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 3
- 238000005070 sampling Methods 0.000 abstract description 2
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 208000032170 Congenital Abnormalities Diseases 0.000 description 1
- 208000025599 Heat Stress disease Diseases 0.000 description 1
- 230000007698 birth defect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000013100 final test Methods 0.000 description 1
- 238000012812 general test Methods 0.000 description 1
- 238000013178 mathematical model Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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- 230000005619 thermoelectricity Effects 0.000 description 1
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Abstract
The invention relates to a thermal cycling load test system for a diode, which comprises a reverse leakage current sampling circuit, a heating control circuit, a transient state thermal resistance test module, a temperature collection circuit, a forward voltage drop collection circuit, a direct current high voltage module, a heat dispersion fan adjustment control circuit, a data bus extension module, a microprocessor, an upper computer displaying interface, a remote monitoring interface circuit and a power supply circuit. The thermal cycling load test system for the diode has the following advantages of capability of arranging test parameters freely, high testing precision, reduction of test periods and high working efficiency because centralized control is utilized.
Description
Technical field
The present invention relates to a kind of diode thermal cycle load test system.
Background technology
It is necessary that the sampling observation of life-span of diode is that all diodes dispatch from the factory, and also is simultaneously that research and development have great benefit to diode, the actual feedback that the delivery test of a diode thermal cycle is tested to motor road, two years of needs at least.And adopt the life cycle of the diode thermal cycle load test of transient thermal resistance method with diode, fatigue lifetime, characteristic showed with diagram curve etc.Mainly there is following shortcoming in existing diode thermal cycling test appearance: the one, and precision is poor: the general tester combination of each instrument basically at present; Because there is the birth defect of low precision in instrument; The parameter testing of measured diode requires to be difficult to accurately reflection, and test is subject to disturb.The temperature accuracy resolution of general test is 1 ℃ at present, and forward voltage drop resolution is 0.1V, reverse leakage current resolution 10nA; The 2nd, test period is long: the heating heat radiation time and the heat radiation time of a diode often surpass six minutes, and corresponding final test finishes need be for a long time; The 3rd, complicated operation needs manual record: for the performance of measured diode, can only take the most original manual record; The rendering performance index line also needs artificial the drafting; When changing the diode test of different manufacturers, the integrated system of instrument just needs each instrument parameter of modify, and is time-consuming inconvenient again; The 4th, inefficiency adopts decentralised control.
Summary of the invention
The object of the invention is exactly the weak point in the background technology, the diode thermal cycle load test system that provide a kind of test parameter can freely be set, measuring accuracy is high, the test period is short, has taked centralized control and transient thermal resistance test function.
For achieving the above object, the present invention adopts following technical scheme: diode thermal cycle load test system, and it comprises:
One reverse leakage current sample circuit is used to test the reverse leakage current of measured diode;
One heating control circuit is used to provide the heating steady current of measured diode;
One transient state thermo-resistance measurement module is used to provide the transient thermal resistance test of measured diode, comprises the constant current source module, adopts permanent power mode (or permanent energy model);
One temperature collection circuit is used to gather the temperature of measured diode;
One forward voltage drop Acquisition Circuit is used to gather the forward voltage drop of measured diode;
One microprocessor; Above-mentioned reverse leakage current sample circuit, heating control circuit, transient thermal resistance test module, temperature collection circuit and forward voltage drop Acquisition Circuit all are connected with microprocessor, and the temperature, forward voltage drop, reverse leakage current, transient thermal resistance, the forward current that are used for each measured diode are gathered, analyze, calculate, handled;
The DC high voltage module is used to control the size of measured diode reverse voltage;
One cooling fan is regulated control circuit, is used to control the rotating speed of cooling fan;
One data bus expansion module, it is connected with microprocessor;
One heating and heat radiation control switching circuit are used to switch measured diode heating or radiating state;
One host computer display interface, it is connected with microprocessor through first communication module, is used for parameter to microprocessor and is provided with and checks;
One remote monitoring interface circuit, it is connected with microprocessor through second communication module, is used to realize sharing of teledata;
One power circuit is used to above-mentioned transient thermal resistance test module, constant current source module, high direct voltage module, data bus expansion module, first communication module, second communication module required direct current is provided.
[0006]For a kind of optimization of the present invention, said first communication module and second communication module are the RS422 communication module.
The present invention compares with background technology, and having one is that test parameter can freely be set; The 2nd, measuring accuracy is high,
With temperature accuracy resolution is 0.1 ℃, and forward voltage drop resolution is 0.001V, reverse leakage current resolution 0.1nA level; The 3rd, the heat time heating time of the single diode of native system and heat radiation time all in 1 minute, have greatly shortened test period; The 4th, adopt centralized control, high efficiency is because collocation has the data bus expansion module, so it can easily realize the expansion of system.
Description of drawings
Fig. 1 is the theory diagram of diode thermal cycle load test system.
Fig. 2 is diode heat fatigue transient thermal resistance life characteristic figure.
Fig. 3 is a diode thermal fatigue life performance diagram.
Embodiment
Embodiment 1: with reference to Fig. 1.Diode thermal cycle load test system, it comprises:
One reverse leakage current sample circuit is used to test the reverse leakage current of measured diode D1; In order to improve resolution, according to the reverse leakage properties of flow of diode, be divided into 4 grades, the 1st grade: 0-5000nA; The 2nd grade: 0-50.00uA; The 3rd grade: 0-500.0uA; The 4th grade: 0-5.000mA.
One heating control circuit is used to provide the heating current of measured diode D1; 1-200A is provided the heat energy of (adjustable), and adjustable current resolution is 1A, sets according to the forward rated current of diode, and heating current is big, and diode heats up just fast.Thermal cycle is just short heating cycle.
One transient state thermo-resistance measurement module is used to provide the transient thermal resistance test of measured diode D1; This diode thermal fatigue life characteristic can judged and dope to the data of this test, can draw diode thermal fatigue life family curve according to these data.
One temperature collection circuit, the temperature that is used to gather measured diode D1; Temperature sensor is an occasionally thermal resistance of thermoelectricity, and acquisition range is 0-300 ℃, and behind the employing A/D change-over circuit, the temperature resolution of collection reaches 0.1 ℃.
One forward voltage drop Acquisition Circuit, the forward voltage drop that is used to gather measured diode D1; The forward voltage drop acquisition range is 0-5.000VDC, and after the A/D conversion, resolution is 0.001V.
One microprocessor; Above-mentioned reverse leakage current sample circuit, heating control circuit, transient thermal resistance test module, temperature collection circuit and forward voltage drop Acquisition Circuit all are connected with microprocessor, are used for temperature, forward voltage drop, reverse leakage current, transient thermal resistance, the forward current of each measured diode D1 are gathered, analyze, calculate, handled;
The DC high voltage module is used to control the size of measured diode D1 reverse voltage; This module produces the 1-1000V adjustable power of direct current, and its resolution is 1V, and when the anode of diode links to each other with the negative terminal of high-voltage power supply, the negative terminal of diode links to each other with the anode of high-voltage power supply, just imposes on the reverse voltage of diode.
One cooling fan is regulated control circuit, is used to control the rotating speed of cooling fan, regulates the discharge quantity of fan size of blower fan, and discharge quantity of fan is big more, and the temperature drop speed of test diode is then fast more, and the heat radiation time then shortens.
One data bus expansion module, it is connected with microprocessor;
One heating and heat radiation control switching circuit are used to switch measured diode D1 heating or radiating state;
One host computer display interface, it is connected with microprocessor through first communication module, is used for parameter to microprocessor and is provided with and checks; Realize transmitting exchange with the data of microprocessor; Through this window; We can easily carry out the parameter setting and check, comprising: design temperature, Current Temperatures, forward voltage drop, reverse leakage current, forward current, transient thermal resistance, reverse voltage, current heat time heating time, current heat radiation time, total heat time heating time, always dispel the heat time, cycle index.And each historical record, the thermal fatigue life characteristic performance curve that forward voltage drop life curve, reverse leakage current life curve, transient thermal resistance life curve and first three bar curve fitting of process become etc.
One remote monitoring interface circuit, it is connected with microprocessor through second communication module, is used to realize sharing of teledata;
One power circuit is used to above-mentioned each module required direct current is provided.
Said first communication module and second communication module are the RS422 communication module.
Embodiment 2: with reference to Fig. 1 and 2.Diode thermal cycle load testing foundation is GB/T 4023-1997, QCT 706-2004, SJ 20788-2000 standard.In recent years, along with testing apparatus and product quality level the day
Exhibition and raising increasingly; Testing standard also phase factor improves, and this testing apparatus not only reaches test request, and surpasses the precision of the thermal cycling test of defined; And drawing the thermal fatigue characteristics curve of diode thermal cycle load, is a qualitative leap to diode thermal cycle load test.
The practical implementation process is following: (is example with the single-path testing diode)
The first step: under normal temperature environment, measured diode D1 is carried out the transient thermal resistance test, apply the little electric current of a routine 100mA earlier, measure the VF1 value; (constant current mode) then applies a 100A, after pulse width is the big electric current of example 100ms, or adopts permanent power and permanent energy model, applies the little electric current of a routine 100mA again, measures the VF2 value; Transient thermal resistance △ VF=VF1 – VF2.The transient thermal resistance test module is realized the test to this function, and delivers to microprocessor to the transient thermal resistance supplemental characteristic;
Second step: heating control circuit imposes on forward heating current of measured diode D1; The forward voltage drop Acquisition Circuit is with the forward voltage drop data acquisition of diode and deliver to microprocessor; Wherein the heating current size is that 0-200A is adjustable, and forward current is big more, and it is fast more to heat; But the heating-up temperature setting range of measured diode D1 is: room temperature-300.0 ℃, and the Current Temperatures Acquisition Circuit is gathered Current Temperatures, when treating that temperature reaches the temperature value of setting, stops measured diode D1 is heated;
The 3rd step: measured diode D1 and high direct voltage module are connected; The reverse leakage current sample circuit is gathered reverse leakage current; Cooling fan is regulated the rotating speed of control circuit control cooling fan, reaches when setting minimum temperature when temperature collection circuit detects measured diode D1 temperature, stops heat radiation.At this moment, the thermal cycling test counting once.
Repetitive cycling is carried out the thermal cycle load test to measured diode D1, until the number of times of the final thermal cycle of measuring measured diode D1.Microprocessor is sent to the host computer display interface with each test data through communication module; The real time data that the host computer display interface is a large amount of with recorded and stored; Comprise forward voltage drop, reverse leakage current, transient thermal resistance, Current Temperatures, cycle index or the like; And according to the data automatic report generation; Transient thermal resistance is a kind of harmless test, and the numerical value of measuring is used for judging performance, technology, the quality index of diode, form according to forward voltage drop life curve, reverse leakage current life curve, transient thermal resistance life curve three
Curve then can be delineated out the matched curve of diode thermal fatigue life characteristic; Diode thermal fatigue life family curve is main test event in this diode test macro, and the drafting of this curve will be the quantum jump to conventional diode thermal cycle load test.Can be according to the numerical value change curve of transient thermal resistance, as weather forecast, can judge or predict the thermal fatigue life of this diode through the thermal fatigue characteristics curve, realize product quality test and production technology improvement.
Embodiment 2: with reference to Fig. 2.Diode thermal cycle load test diode transient thermal resistance life curve:
Horizontal ordinate is the thermal cycling test number of times among the figure, and ordinate is the thermal transient resistance, according to this curve map, can judge or predict the measured diode thermal life.
Embodiment 3: with reference to Fig. 3.The present invention implements to introduce diode thermal cycle load test diode thermal fatigue life curve (DVT) curve concept:
Diode forward pressure drop life curve, diode reverse leakage current life curve, diode transient thermal resistance life curve through the mathematical model algorithm, finally obtain diode thermal fatigue life curve through over-fitting.
Horizontal ordinate is the thermal cycling test number of times among the figure, and ordinate is the diode thermal fatigue life, according to this curve map, can judge or predict the final thermal life of measured diode.
This curve for outgoing judge, (automobile set out on a journey practice examining) tested on the road, improve production technology that splendid reference role is arranged.
What need understand is: though present embodiment has carried out more detailed explanation to the present invention; But these explanations, just to simple declaration of the present invention, rather than limitation of the present invention; Any innovation and creation that do not exceed in the connotation of the present invention all fall in protection scope of the present invention.
Claims (2)
1. diode thermal cycle load test system is characterized in that being that it comprises:
One reverse leakage current sample circuit is used to test the reverse leakage current of measured diode;
One heating control circuit is used to provide the heating steady current of measured diode;
One transient state thermo-resistance measurement module is used to provide the transient thermal resistance test of measured diode, comprises the constant current source module, adopts permanent power mode;
One temperature collection circuit is used to gather the temperature of measured diode;
One forward voltage drop Acquisition Circuit is used to gather the forward voltage drop of measured diode;
One microprocessor; Above-mentioned reverse leakage current sample circuit, heating control circuit, transient thermal resistance test module, temperature collection circuit and forward voltage drop Acquisition Circuit all are connected with microprocessor, and the temperature, forward voltage drop, reverse leakage current, transient thermal resistance, the forward current that are used for each measured diode are gathered, analyze, calculate, handled;
The DC high voltage module is used to control the size of measured diode reverse voltage;
One cooling fan is regulated control circuit, is used to control the rotating speed of cooling fan;
One data bus expansion module, it is connected with microprocessor;
One heating and heat radiation control switching circuit are used to switch measured diode heating or radiating state;
One host computer display interface, it is connected with microprocessor through first communication module, is used for parameter to microprocessor and is provided with and checks;
One remote monitoring interface circuit, it is connected with microprocessor through second communication module, is used to realize sharing of teledata;
One power circuit is used to above-mentioned transient thermal resistance test module, constant current source module, high direct voltage module, data bus expansion module, first communication module, second communication module required direct current is provided.
2. diode thermal cycle load test according to claim 1 system, it is characterized in that: said first communication module and second communication module are the RS422 communication module.
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| CN 201010553197 CN102096035B (en) | 2010-11-22 | 2010-11-22 | Thermal cycling load test system for diode |
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| CN 201010553197 CN102096035B (en) | 2010-11-22 | 2010-11-22 | Thermal cycling load test system for diode |
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| CN102096035A CN102096035A (en) | 2011-06-15 |
| CN102096035B true CN102096035B (en) | 2012-08-08 |
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| CN102749152B (en) * | 2012-07-27 | 2014-12-17 | 北京市科通电子继电器总厂 | Method and apparatus for measuring junction temperature based on MOSFET (metal-oxide-semiconductor field-effect transistor) |
| CN105004427B (en) * | 2015-07-08 | 2018-08-17 | 上海大学 | Device and method for accurately testing semiconductor device temperature distribution |
| CN109557443A (en) * | 2018-11-30 | 2019-04-02 | 中国振华集团永光电子有限公司（国营第八七三厂） | It is a kind of rectification, switch, Schottky diode high-temperature behavior test circuit |
Citations (5)
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|---|---|---|---|---|
| CN1696726A (en) * | 2005-05-27 | 2005-11-16 | 韩金龙 | Automated testing system and method for light emitting diode |
| CN1825128A (en) * | 2005-02-22 | 2006-08-30 | 久元电子股份有限公司 | LED tester |
| CN201141906Y (en) * | 2007-08-22 | 2008-10-29 | 英业达股份有限公司 | LED test device |
| CN101452044A (en) * | 2007-12-07 | 2009-06-10 | 财团法人工业技术研究院 | LED life test apparatus and method |
| CN201955441U (en) * | 2010-11-22 | 2011-08-31 | 金天 | Diode thermal cycle load test system |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269283A (en) * | 1999-03-18 | 2000-09-29 | Rohm Co Ltd | Thermal load test method for packaged semiconductor part |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1825128A (en) * | 2005-02-22 | 2006-08-30 | 久元电子股份有限公司 | LED tester |
| CN1696726A (en) * | 2005-05-27 | 2005-11-16 | 韩金龙 | Automated testing system and method for light emitting diode |
| CN201141906Y (en) * | 2007-08-22 | 2008-10-29 | 英业达股份有限公司 | LED test device |
| CN101452044A (en) * | 2007-12-07 | 2009-06-10 | 财团法人工业技术研究院 | LED life test apparatus and method |
| CN201955441U (en) * | 2010-11-22 | 2011-08-31 | 金天 | Diode thermal cycle load test system |
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| Title |
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| JP特开2000-269283A 2000.09.29 |
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Application publication date: 20110615 Assignee: JINHUA HUAQIANG ELECTRONIC TECHNOLOGY CO.,LTD. Assignor: Jin Tian Contract record no.: 2014330000164 Denomination of invention: Thermal cycling load test system for diode Granted publication date: 20120808 License type: Exclusive License Record date: 20140515 |
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