CN102084507A - 具有降低的未转换光发射的波长转换发光二极管 - Google Patents
具有降低的未转换光发射的波长转换发光二极管 Download PDFInfo
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- CN102084507A CN102084507A CN2009801256582A CN200980125658A CN102084507A CN 102084507 A CN102084507 A CN 102084507A CN 2009801256582 A CN2009801256582 A CN 2009801256582A CN 200980125658 A CN200980125658 A CN 200980125658A CN 102084507 A CN102084507 A CN 102084507A
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- light
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- emitting diode
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Images
Classifications
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08159397.2 | 2008-07-01 | ||
EP08159397 | 2008-07-01 | ||
PCT/IB2009/052713 WO2010001306A1 (en) | 2008-07-01 | 2009-06-24 | Wavelength converted light emitting diode with reduced emission of unconverted light |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102084507A true CN102084507A (zh) | 2011-06-01 |
CN102084507B CN102084507B (zh) | 2016-01-20 |
Family
ID=41259379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980125658.2A Active CN102084507B (zh) | 2008-07-01 | 2009-06-24 | 具有降低的未转换光发射的波长转换发光二极管 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8338846B2 (zh) |
EP (1) | EP2294634B1 (zh) |
JP (1) | JP5616886B2 (zh) |
KR (1) | KR101596001B1 (zh) |
CN (1) | CN102084507B (zh) |
RU (1) | RU2497235C2 (zh) |
TW (1) | TWI531080B (zh) |
WO (1) | WO2010001306A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107450230A (zh) * | 2011-12-08 | 2017-12-08 | Lg伊诺特有限公司 | 显示装置 |
CN109478587A (zh) * | 2016-07-05 | 2019-03-15 | 奥斯兰姆奥普托半导体有限责任公司 | 用于生产光电子照明装置的方法和光电子照明装置 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012033823A (ja) * | 2010-08-02 | 2012-02-16 | Stanley Electric Co Ltd | 発光装置およびその製造方法 |
JP5680472B2 (ja) * | 2011-04-22 | 2015-03-04 | シチズンホールディングス株式会社 | 半導体発光装置の製造方法 |
EP2812929B1 (en) * | 2012-02-10 | 2020-03-11 | Lumileds Holding B.V. | Molded lens forming a chip scale led package and method of manufacturing the same |
JP5970215B2 (ja) * | 2012-03-22 | 2016-08-17 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
DE102012210751A1 (de) * | 2012-06-25 | 2014-01-02 | Osram Opto Semiconductors Gmbh | Konversionselement, vorrichtung zum erzeugen elektromagnetischer strahlung, scheinwerfer, verfahren zum herstellen eines konversionselements und verfahren zum herstellen einer vorrichtung zum erzeugen elektromagnetischer strahlung |
JP6097040B2 (ja) * | 2012-09-20 | 2017-03-15 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
JP6036103B2 (ja) * | 2012-09-27 | 2016-11-30 | 豊田合成株式会社 | 発光装置及びその製造方法 |
JP6097084B2 (ja) | 2013-01-24 | 2017-03-15 | スタンレー電気株式会社 | 半導体発光装置 |
DE102013102482A1 (de) * | 2013-03-12 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
JP6229412B2 (ja) * | 2013-09-30 | 2017-11-15 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP5996022B2 (ja) * | 2015-03-13 | 2016-09-21 | シチズン電子株式会社 | 発光装置 |
KR102319111B1 (ko) | 2015-03-30 | 2021-11-01 | 삼성디스플레이 주식회사 | 발광 소자 |
CN108369984B (zh) * | 2015-06-09 | 2022-02-18 | 亮锐控股有限公司 | 使用高折射率粘合剂的发光二极管制作 |
EP3440712A1 (en) | 2016-04-05 | 2019-02-13 | Philips Lighting Holding B.V. | Light converting device having a wavelength converting layer with a hydrophobic nanostructure |
JP6900571B2 (ja) * | 2017-08-03 | 2021-07-07 | ルミレッズ リミテッド ライアビリティ カンパニー | 発光装置を製造する方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6635363B1 (en) * | 2000-08-21 | 2003-10-21 | General Electric Company | Phosphor coating with self-adjusting distance from LED chip |
US20040145308A1 (en) * | 2002-10-22 | 2004-07-29 | Osram Opto Semiconductors Gmbh | Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body |
US20060055309A1 (en) * | 2004-09-14 | 2006-03-16 | Masato Ono | Light emitting device |
US20060202223A1 (en) * | 2005-03-09 | 2006-09-14 | Gelcore Llc | Increased light extraction from a nitride led |
CN101064329A (zh) * | 2006-04-28 | 2007-10-31 | 松下电器产业株式会社 | 光学器件和使用该光学器件的光学模块 |
US20080116467A1 (en) * | 2006-11-20 | 2008-05-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including Luminescent Ceramic and Light-Scattering Material |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01128479A (ja) * | 1987-11-12 | 1989-05-22 | Matsushita Electric Ind Co Ltd | 半導体発光素子 |
US6747406B1 (en) | 2000-08-07 | 2004-06-08 | General Electric Company | LED cross-linkable phospor coating |
US7053419B1 (en) | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
US7064355B2 (en) * | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
JP2002232018A (ja) * | 2000-11-28 | 2002-08-16 | Nippon Telegr & Teleph Corp <Ntt> | 紫外光源の作製方法および紫外光源部品並びに光学装置の作製方法 |
JP5110744B2 (ja) | 2000-12-21 | 2012-12-26 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 発光装置及びその製造方法 |
JP3991612B2 (ja) * | 2001-04-09 | 2007-10-17 | 日亜化学工業株式会社 | 発光素子 |
TW552726B (en) * | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
US7462502B2 (en) | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
US7521728B2 (en) * | 2006-01-20 | 2009-04-21 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same |
JP2009524914A (ja) | 2006-01-24 | 2009-07-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光装置 |
US7626210B2 (en) | 2006-06-09 | 2009-12-01 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED |
CN101467270B (zh) * | 2006-06-14 | 2013-03-27 | 皇家飞利浦电子股份有限公司 | 发光装置 |
WO2008043519A1 (en) * | 2006-10-10 | 2008-04-17 | Lexedis Lighting Gmbh | Phosphor-converted light emitting diode |
WO2008056296A1 (en) * | 2006-11-06 | 2008-05-15 | Koninklijke Philips Electronics N.V. | Wavelength converting elements with reflective edges |
US20090032799A1 (en) * | 2007-06-12 | 2009-02-05 | Siphoton, Inc | Light emitting device |
US8129205B2 (en) * | 2010-01-25 | 2012-03-06 | Micron Technology, Inc. | Solid state lighting devices and associated methods of manufacturing |
US8390010B2 (en) * | 2010-03-25 | 2013-03-05 | Micron Technology, Inc. | Solid state lighting devices with cellular arrays and associated methods of manufacturing |
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2009
- 2009-06-24 KR KR1020117002263A patent/KR101596001B1/ko active IP Right Grant
- 2009-06-24 US US12/999,706 patent/US8338846B2/en active Active
- 2009-06-24 JP JP2011515704A patent/JP5616886B2/ja active Active
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6635363B1 (en) * | 2000-08-21 | 2003-10-21 | General Electric Company | Phosphor coating with self-adjusting distance from LED chip |
US20040145308A1 (en) * | 2002-10-22 | 2004-07-29 | Osram Opto Semiconductors Gmbh | Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body |
US20060055309A1 (en) * | 2004-09-14 | 2006-03-16 | Masato Ono | Light emitting device |
US20060202223A1 (en) * | 2005-03-09 | 2006-09-14 | Gelcore Llc | Increased light extraction from a nitride led |
CN101064329A (zh) * | 2006-04-28 | 2007-10-31 | 松下电器产业株式会社 | 光学器件和使用该光学器件的光学模块 |
US20080116467A1 (en) * | 2006-11-20 | 2008-05-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including Luminescent Ceramic and Light-Scattering Material |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107450230A (zh) * | 2011-12-08 | 2017-12-08 | Lg伊诺特有限公司 | 显示装置 |
CN109478587A (zh) * | 2016-07-05 | 2019-03-15 | 奥斯兰姆奥普托半导体有限责任公司 | 用于生产光电子照明装置的方法和光电子照明装置 |
CN109478587B (zh) * | 2016-07-05 | 2022-03-08 | 奥斯兰姆奥普托半导体有限责任公司 | 用于生产光电子照明装置的方法和光电子照明装置 |
Also Published As
Publication number | Publication date |
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CN102084507B (zh) | 2016-01-20 |
WO2010001306A1 (en) | 2010-01-07 |
TWI531080B (zh) | 2016-04-21 |
RU2011103442A (ru) | 2012-08-10 |
JP5616886B2 (ja) | 2014-10-29 |
EP2294634A1 (en) | 2011-03-16 |
EP2294634B1 (en) | 2020-08-05 |
JP2011526739A (ja) | 2011-10-13 |
KR101596001B1 (ko) | 2016-03-07 |
TW201007994A (en) | 2010-02-16 |
RU2497235C2 (ru) | 2013-10-27 |
US8338846B2 (en) | 2012-12-25 |
US20110084302A1 (en) | 2011-04-14 |
KR20110025994A (ko) | 2011-03-14 |
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