CN102074595A - Thin film solar battery unit - Google Patents
Thin film solar battery unit Download PDFInfo
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- CN102074595A CN102074595A CN2010105460342A CN201010546034A CN102074595A CN 102074595 A CN102074595 A CN 102074595A CN 2010105460342 A CN2010105460342 A CN 2010105460342A CN 201010546034 A CN201010546034 A CN 201010546034A CN 102074595 A CN102074595 A CN 102074595A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention relates to a thin film solar battery unit, specifically to a thin film solar battery unit based on amorphous semiconductor materials. The thin film solar battery unit provided by the invention is characterized in that the substrate is provided with two thin film solar sub-batteries which are connected in serial by means of a magnetron sputtering method, the top layer of one of the two thin film solar sub-batteries which are connected in serial is equipped with an antireflection transparent conducting oxide layer, and the thin film solar battery unit is an amorphous thin-film double junction solar battery unit which is expanded from visible light to infrared band absorption.
Description
Technical field
The present invention relates to the thin-film solar cells group, be meant a kind ofly based on amorphous semiconductor material especially, can expand to the noncrystal membrane double-junction solar battery that infrared band absorbs from visible light.
Background technology
Solar cell has been obtained extensive use as a kind of cleaning, environmentally friendly energy conversion apparatus on ground and space technology.At present, most of solar cells are based on all that single crystal silicon material makes on the market, and have developed into mature technique.But, energy conversion efficiency and cost problem are restricting further popularizing of solar cell always.Recent two decades, solar cell develop to hull cell gradually, and are aided with some novel battery structures of design such as multi-knot thin film solar cell, have improved battery conversion efficiency when reducing manufacturing cost.The noncrystal membrane material is one of competitive candidate of following multi-knot thin film solar cell development.For non-crystalline material, because its preparation technology is simple, cheap, can be grown on any substrate simultaneously, when making solar cell, can select cheap substrate, can reduce production cost of cells.
General so-called full spectral absorption solar cell is not seen the solar cell that relevant infrared band absorbs at present all at visible light wave range.Based on having comprised considerable infrared light composition in the sunlight, if can develop a kind of from as seen-solar cell of infrared band absorption, will be that market prospects are arranged very much.
Summary of the invention
In order to solve above-mentioned drawback, a kind of thin-film solar cells group, comprise: substrate, the sub-battery of thin film solar of two series connection that generate by magnetically controlled sputter method, generate the including transparent conducting oxide layer that antireflection is arranged on the top layer of two sub-batteries of thin film solar above the series connection, it is characterized in that: said two sub-batteries are made up of the sub-battery of amorphous silicon membrane of sub-battery of amorphous mercury cadmium telluride thin film that is arranged in order the absorption infrared band that is created on the substrate and absorption visible light wave range.
The thin-film solar cells group is characterized in that: the sub-battery of said amorphous mercury cadmium telluride thin film (3) is by the amorphous Hg1-xCdxTe film of mixing p type impurity, and the amorphous Hg1-xCdxTe film of eigen I type amorphous Hg1-xCdxTe film and doped type N impurity is formed.
The thin-film solar cells group is characterized in that: the sub-battery of said amorphous silicon membrane is by the amorphous Si film of mixing p type impurity, and the amorphous Si film of eigen I type amorphous Si film and doped type N impurity is formed.The thin-film solar cells group is characterized in that, the sub-battery of the thin film solar of series connection is more than 2.
Description of drawings
Fig. 1: structural representation of the present invention.
Embodiment
The present invention is described in further detail to reach accompanying drawing by the following examples:
As shown in Figure 1, thin-film solar cells group of the present invention comprises: substrate 1, the sub-battery 3,4 of thin film solar of two series connection that generate by magnetically controlled sputter method on substrate 1 generates the ITO anti-reflection layer 5 that electrically conducting transparent is arranged on the top layer of sub-battery 4.Said two sub-batteries are made up of the sub-battery 4 of amorphous silicon membrane of sub-battery 3 of the amorphous mercury cadmium telluride thin film that is arranged in order the absorption infrared band that is created on the substrate and absorption visible light wave range.Substrate 1 material of the present invention is inexpensive glass, polymer, aluminium or stainless steel.Deposit the metal level 2 of high reflectance between substrate 1 and sub-battery 3, metal level is the silver and the conductive zinc oxide layer of aluminium lamination, silver layer or alternately arrangement, and the light that helps solar cell is like this captured.
The sub-battery of amorphous mercury cadmium telluride thin film is in order to realize the absorption to infrared band, wherein, eigen I type amorphous Hg1-xCdxTe thin layer is that a component x upwards forms at the plural layers of 0.25-0.75 scope gradual change from substrate, component x increases progressively with 0.1, and the intrinsic layer of this structure can be realized the absorption waveband infrared to 1129nm-1774nm substantially.The thickness of the I type layer of the sub-battery of amorphous mercury cadmium telluride thin film is 200nm-1000nm, and the thickness of N type layer is 20nm-40nm, and the thickness of P type layer is 20nm-40nm, and gross thickness is controlled between the 240nm-1080nm better.
The sub-battery of amorphous silicon membrane is in order to realize the absorption to visible light wave range, and the thickness of I type layer is 200nm-1000nm, and the thickness of N type layer is 30nm-50nm, and the thickness of P type layer is 30nm-50nm, and gross thickness is controlled between the 260nm-1100nm better.
The electrically conducting transparent anti-reflection layer 5 on top is a zinc oxide film, and thickness is 200nm-300nm, adopts the preparation of low-pressure chemical vapor deposition method.
The invention is not restricted to the foregoing description; in design scope of the present invention; the description of book according to the above description, those of ordinary skill in the art also can make some conspicuous changes, but these changes all should fall within the protection range of claim of the present invention.
Claims (3)
1. thin-film solar cells group, comprise: substrate, the sub-battery of thin film solar of two series connection that generate by magnetically controlled sputter method, generate the including transparent conducting oxide layer that antireflection is arranged on the top layer of two sub-batteries of thin film solar above the series connection, it is characterized in that: said two sub-batteries are made up of the sub-battery of amorphous silicon membrane of sub-battery of amorphous mercury cadmium telluride thin film that is arranged in order the absorption infrared band that is created on the substrate and absorption visible light wave range.
2. according to the thin-film solar cells group of claim 1, it is characterized in that: the sub-battery of said amorphous mercury cadmium telluride thin film (3) is by the amorphous Hg1-xCdxTe film of mixing p type impurity, and the amorphous Hg1-xCdxTe film of eigen I type amorphous Hg1-xCdxTe film and doped type N impurity is formed.
3. according to the thin-film solar cells group of claim 1, it is characterized in that: the sub-battery of said amorphous silicon membrane is by the amorphous Si film of mixing p type impurity, and the amorphous Si film of eigen I type amorphous Si film and doped type N impurity is formed.
Thin-film solar cells group according to claim 1 is characterized in that, the sub-battery of the thin film solar of series connection is more than 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105460342A CN102074595A (en) | 2010-11-16 | 2010-11-16 | Thin film solar battery unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105460342A CN102074595A (en) | 2010-11-16 | 2010-11-16 | Thin film solar battery unit |
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| Publication Number | Publication Date |
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| CN102074595A true CN102074595A (en) | 2011-05-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010105460342A Pending CN102074595A (en) | 2010-11-16 | 2010-11-16 | Thin film solar battery unit |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101252152A (en) * | 2008-04-02 | 2008-08-27 | 中国科学院上海技术物理研究所 | Visible infrared waveband absorbing amorphous thin-film solar cell |
| CN101797893A (en) * | 2010-04-29 | 2010-08-11 | 成都市猎户座科技有限责任公司 | Wind energy and visible light-infrared solar electric fuel hybrid electric vehicle |
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2010
- 2010-11-16 CN CN2010105460342A patent/CN102074595A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101252152A (en) * | 2008-04-02 | 2008-08-27 | 中国科学院上海技术物理研究所 | Visible infrared waveband absorbing amorphous thin-film solar cell |
| CN101797893A (en) * | 2010-04-29 | 2010-08-11 | 成都市猎户座科技有限责任公司 | Wind energy and visible light-infrared solar electric fuel hybrid electric vehicle |
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Application publication date: 20110525 |