CN110808299A - Flexible high-absorption rate thin film solar cell - Google Patents

Flexible high-absorption rate thin film solar cell Download PDF

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CN110808299A
CN110808299A CN201911123061.6A CN201911123061A CN110808299A CN 110808299 A CN110808299 A CN 110808299A CN 201911123061 A CN201911123061 A CN 201911123061A CN 110808299 A CN110808299 A CN 110808299A
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thin film
solar cell
film solar
thickness
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CN110808299B (en
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马立云
姚婷婷
李刚
沈洪雪
彭赛奥
金克武
王天齐
杨扬
甘治平
彭寿
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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Abstract

The invention discloses a flexible high-absorptivity thin-film solar cell, which comprises a flexible substrate, wherein a front electrode, a buffer layer, an absorption layer, a back contact layer and a protective layer are sequentially laminated on the top surface of the flexible substrate from bottom to top, the absorption layer is a CdTe thin film, and the front electrode comprises a lower barrier layer, a microstructure layer, a transparent conducting layer and an upper barrier layer which are sequentially laminated from bottom to top; the microstructure layer is monodisperse SiO2Small spherical film, SiO2The diameter of the small ball is 100-500 nm; the thickness of the buffer layer is 40-120 nm; the thickness of the absorption layer is 1500-2500 nm; the thickness of the back contact layer is 5-30 nm; the thickness of the protective layer is 10-40 nm; the thin film solar cell can improve the absorptivity of solar energy and enhance the performance of the thin film solar cellOverall performance.

Description

Flexible high-absorption rate thin film solar cell
Technical Field
The invention relates to the technical field of thin film solar cells, in particular to a flexible high-absorptivity thin film solar cell.
Background
At present, a thin film solar cell is rapidly developing as an efficient energy product, and has become a new hotspot and a new trend of the development of the international photovoltaic market due to the fact that the thin film solar cell is relatively lighter in weight, smooth in appearance and relatively low in manufacturing cost.
At present, there are 3 types of thin film solar cells that can be industrially produced in a large scale: silicon-based thin film solar cells, Copper Indium Gallium Selenide (CIGS) thin film solar cells, and cadmium telluride (CdTe) thin film solar cells. The cadmium telluride thin film solar cell is relatively simplest in structure, a single-phase CdTe crystal thin film can be easily prepared, and the preparation method is more. Most of the thin-film solar cells are glass substrates, and the flexible thin-film solar cells are easy to carry due to light weight, folding property, bending property and obvious cost reduction, so that the flexible thin-film solar cells are beneficial to large-scale production, can be widely applied to portable emergency charging backpacks, photovoltaic tents, photovoltaic curtains, photovoltaic roofs, solar automobiles and the like, have wide application spaces, and are beneficial to the sustainable and healthy development of the photovoltaic industry in China.
However, the conventional cadmium telluride thin film solar cell has low absorptivity, and the development of the thin film solar cell is restricted.
Disclosure of Invention
The invention aims to provide a flexible high-absorptivity thin-film solar cell, which can improve the absorptivity of solar energy and enhance the overall performance of the thin-film solar cell.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a flexible high-absorptivity thin-film solar cell comprises a flexible substrate, wherein a front electrode, a buffer layer, an absorption layer, a back contact layer and a protection layer are sequentially laminated on the top surface of the flexible substrate from bottom to top, and the absorption layer is a CdTe thin film;
the lower barrier layer is TiO2、ZnO、Al2O3SnO or In2O3The thickness of the lower barrier layer is 20-80 nm; the microstructure layer is monodisperse SiO2Small spherical film, SiO2The diameter of the small ball is 100-500 nm; the transparent conducting layer is a BZO, AZO, GZO, IGZO or ITO film, and the thickness of the transparent conducting layer is 600-1000 nm; the upper barrier layer is TiO2、ZnO、Al2O3SnO or In2O3The thickness of the upper barrier layer is 15-60 nm;
the thickness of the buffer layer is 40-120 nm; the thickness of the absorption layer is 1500-2500 nm; the thickness of the back contact layer is 5-30 nm; the thickness of the protective layer is 10-40 nm.
Furthermore, the top surface of the transparent conducting layer is of a concave-convex suede structure.
Further, the flexible substrate is a polymer substrate or a metal flexible substrate.
Further, the buffer layer is a CdS, ZnS or InS thin film.
Further, the back contact layer is a Cu, Zn, Mo, Ti, Al, Ag or Au film.
Further, the protective layer is an Au, Zn, Pt, Zr or Ti film.
Further, the polymer substrate is made of polyimide or polybenzimidazole.
Furthermore, the metal flexible substrate is made of iron-nickel alloy, stainless steel, aluminum foil, titanium foil, molybdenum foil or copper foil.
The invention has the beneficial effects that:
the flexible substrate is a polymer substrate or a metal flexible substrate, and is light in weight, foldable, bendable and convenient to carry, so that the surrounding type sputtering deposition can be adopted, the large-scale production is facilitated, and the cost is obviously reduced.
And the front electrode adopts a composite structure of multiple layers of films, the lower blocking layer can effectively prevent the thin-film solar cell from electric leakage, the transmittance of the front electrode is increased, the pollution from the substrate can be blocked, and the light transmittance and the electric conductivity of the transparent conductive layer are prevented from being influenced.
The microstructure layer can reduce the reflectivity of the front electrode, and is beneficial to the formation of a surface microstructure of the transparent conducting layer, so that the light transmittance of the front electrode is effectively increased, the absorption of the solar cell absorption layer on sunlight is enhanced, and the light energy utilization rate is improved.
And fourthly, the transparent conducting layer can adopt different films, and the material and the preparation method of the transparent conducting layer can be adjusted according to the materials of the absorbing layer and the buffer layer, so that excellent photoelectric performance is realized and the cost is reduced.
Fifthly, the concave-convex suede structure of the transparent conducting layer can reduce the reflectivity of the front electrode, so that the light transmittance of the front electrode is effectively increased, the absorption of the solar cell absorption layer on sunlight is enhanced, and the light energy utilization rate is improved.
And sixthly, the upper blocking layer can be used as middle buffering of the front electrode and the buffering layer, so that the interface state of the front electrode and the buffering layer is reduced, the transmittance of the front electrode is increased, elements in the absorption layer are effectively prevented from diffusing to the transparent conducting layer, the pollution from the substrate can be blocked, and the light transmittance and the conducting performance of the transparent conducting layer are prevented from being influenced.
And seventhly, the buffer layer adopts a CdS, ZnS or InS film, so that the lattice constant is between the front electrode and the absorption layer, and the interface state of the front electrode and the absorption layer is reduced.
And eighthly, the back contact layer adopts a Cu, Zn, Mo, Ti, Al, Ag or Au film, and can form good ohmic contact with the absorption layer and reduce the recombination of a carrier interface.
And the protective layer adopts an Au, Zn, Pt, Zr or Ti film, so that the solar cell is protected from being corroded by acid and alkali to reduce the photoelectric conversion efficiency or generate electric leakage, the weather resistance of the cell is improved, and the service life of the cell is prolonged.
Drawings
The invention is further illustrated with reference to the following figures and examples:
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a surface topography of the front electrode of the present invention.
Detailed Description
As shown in fig. 1, the invention provides a flexible high-absorption-rate thin-film solar cell, which comprises a flexible substrate 1, wherein a front electrode 2, a buffer layer 3, an absorption layer 4, a back contact layer 5 and a protection layer 6 are sequentially stacked on the top surface of the flexible substrate 1 from bottom to top, and the absorption layer 4 is a CdTe thin film; as shown in fig. 2, the front electrode 2 includes a lower barrier layer 21, a microstructure layer 22, a transparent conductive layer 23, and an upper barrier layer 24, which are sequentially stacked from bottom to top.
The lower barrier layer 21 is TiO2、ZnO、Al2O3SnO or In2O3A thin film, wherein the thickness of the lower barrier layer 21 is 20-80 nm; the microstructure layer 22 is a monodisperse SiO2Small spherical film, SiO2The diameter of the small ball is 100-500 nm; the transparent conducting layer 23 is a BZO, AZO, GZO, IGZO or ITO thin film, the thickness of the transparent conducting layer 23 is 600-1000 nm, and preferably, the top surface of the transparent conducting layer 23 is of a concave-convex suede structure; the upper barrier layer 24 is TiO2、ZnO、Al2O3SnO or In2O3The film has an upper barrier layer 24 with a thickness of 15 to 60 nm.
The thickness of the buffer layer 3 is 40-120 nm; the thickness of the absorption layer 4 is 1500-2500 nm; the thickness of the back contact layer 5 is 5-30 nm; the thickness of the protective layer 6 is 10 to 40 nm.
Preferably, the flexible substrate 1 is a polymer substrate or a metal flexible substrate, the polymer substrate is polyimide or polybenzimidazole, and the metal flexible substrate is iron-nickel alloy, stainless steel, aluminum foil, titanium foil, molybdenum foil or copper foil. The buffer layer 3 is a CdS, ZnS or InS thin film. The back contact layer 5 is a Cu, Zn, Mo, Ti, Al, Ag or Au film. The protective layer 6 is an Au, Zn, Pt, Zr or Ti thin film.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner; those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention.

Claims (8)

1. A flexible high-absorptivity thin-film solar cell comprises a flexible substrate, wherein a front electrode, a buffer layer, an absorption layer, a back contact layer and a protection layer are sequentially laminated on the top surface of the flexible substrate from bottom to top, and the absorption layer is a CdTe thin film;
the lower barrier layer is TiO2、ZnO、Al2O3SnO or In2O3The thickness of the lower barrier layer is 20-80 nm; the microstructure layer is monodisperse SiO2Small spherical film, SiO2The diameter of the small ball is 100-500 nm; the transparent conducting layer is a BZO, AZO, GZO, IGZO or ITO film, and the thickness of the transparent conducting layer is 600-1000 nm; the upper barrier layer is TiO2、ZnO、Al2O3SnO or In2O3The thickness of the upper barrier layer is 15-60 nm;
the thickness of the buffer layer is 40-120 nm; the thickness of the absorption layer is 1500-2500 nm; the thickness of the back contact layer is 5-30 nm; the thickness of the protective layer is 10-40 nm.
2. The flexible high absorption rate thin film solar cell according to claim 1, wherein the top surface of the transparent conductive layer is a concave-convex textured structure.
3. The flexible high absorption thin film solar cell according to claim 1 or 2, wherein the flexible substrate is a polymer substrate or a metal flexible substrate.
4. A flexible high absorption thin film solar cell according to claim 1 or 2, wherein the buffer layer is a CdS, ZnS or InS thin film.
5. The flexible high absorption thin film solar cell according to claim 1 or 2, wherein the back contact layer is a Cu, Zn, Mo, Ti, Al, Ag or Au thin film.
6. The flexible high absorption thin film solar cell according to claim 1 or 2, wherein the protective layer is an Au, Zn, Pt, Zr or Ti thin film.
7. The flexible high absorption thin film solar cell according to claim 3, wherein the polymer substrate is polyimide or polybenzimidazole.
8. The flexible high absorption rate thin film solar cell according to claim 3, wherein the metal flexible substrate is made of iron-nickel alloy, stainless steel, aluminum foil, titanium foil, molybdenum foil or copper foil.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114050191A (en) * 2021-11-24 2022-02-15 中建材蚌埠玻璃工业设计研究院有限公司 Flexible cadmium telluride thin-film solar cell structure
CN114664952A (en) * 2022-03-15 2022-06-24 北京大学深圳研究生院 Thin-film solar cell back contact structure and preparation method and application thereof

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Publication number Priority date Publication date Assignee Title
CN101582460A (en) * 2009-03-24 2009-11-18 新奥光伏能源有限公司 Multilayer transparent conductive film of thin film solar cell and manufacturing method thereof
KR100972115B1 (en) * 2009-03-04 2010-07-23 주성엔지니어링(주) Flexible thin film type solar cell and method for manufacturing the same
KR20110012314A (en) * 2009-07-30 2011-02-09 엘지전자 주식회사 Photovoltaic device and manufacturing method thereof
CN102332499A (en) * 2011-10-08 2012-01-25 保定天威集团有限公司 Method for utilizing microparticles to produce double-textured transparent electrode
CN102893405A (en) * 2010-02-09 2013-01-23 陶氏环球技术有限责任公司 Photovoltaic device with transparent, conductive barrier layer
CN106784060A (en) * 2016-12-21 2017-05-31 蚌埠玻璃工业设计研究院 A kind of zno-based transparent conducting glass with self-trapping smooth function
CN106847941A (en) * 2017-02-04 2017-06-13 江苏神科新能源有限公司 A kind of cadmium telluride diaphragm solar battery and preparation method thereof
CN210607286U (en) * 2019-11-16 2020-05-22 中建材蚌埠玻璃工业设计研究院有限公司 Bendable high-light-transmittance thin-film solar cell

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100972115B1 (en) * 2009-03-04 2010-07-23 주성엔지니어링(주) Flexible thin film type solar cell and method for manufacturing the same
CN101582460A (en) * 2009-03-24 2009-11-18 新奥光伏能源有限公司 Multilayer transparent conductive film of thin film solar cell and manufacturing method thereof
KR20110012314A (en) * 2009-07-30 2011-02-09 엘지전자 주식회사 Photovoltaic device and manufacturing method thereof
CN102893405A (en) * 2010-02-09 2013-01-23 陶氏环球技术有限责任公司 Photovoltaic device with transparent, conductive barrier layer
CN102332499A (en) * 2011-10-08 2012-01-25 保定天威集团有限公司 Method for utilizing microparticles to produce double-textured transparent electrode
CN106784060A (en) * 2016-12-21 2017-05-31 蚌埠玻璃工业设计研究院 A kind of zno-based transparent conducting glass with self-trapping smooth function
CN106847941A (en) * 2017-02-04 2017-06-13 江苏神科新能源有限公司 A kind of cadmium telluride diaphragm solar battery and preparation method thereof
CN210607286U (en) * 2019-11-16 2020-05-22 中建材蚌埠玻璃工业设计研究院有限公司 Bendable high-light-transmittance thin-film solar cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114050191A (en) * 2021-11-24 2022-02-15 中建材蚌埠玻璃工业设计研究院有限公司 Flexible cadmium telluride thin-film solar cell structure
CN114664952A (en) * 2022-03-15 2022-06-24 北京大学深圳研究生院 Thin-film solar cell back contact structure and preparation method and application thereof

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