CN102064676B - Integrated gate commutated thyristor (IGCT) three-level power module - Google Patents
Integrated gate commutated thyristor (IGCT) three-level power module Download PDFInfo
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- CN102064676B CN102064676B CN 201010623295 CN201010623295A CN102064676B CN 102064676 B CN102064676 B CN 102064676B CN 201010623295 CN201010623295 CN 201010623295 CN 201010623295 A CN201010623295 A CN 201010623295A CN 102064676 B CN102064676 B CN 102064676B
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Abstract
The invention relates to an integrated gate commutated thyristor (IGCT) three-level power module belonging to the technical field of high-power semiconductor switches. The IGCT three-level power module comprises an IGCT, an antiparallel flywheel diode, a left metal frame weld assembly, a right metal frame weld assembly, a pressing mechanism, a square water-cooling radiator, an insulating fixed pin, an insulating draw rod, an insulating hook pin, a P phase leading-in bus bar, a P phase leading-out bus bar, an M phase leading-out bus bar, an N phase leading-out bus bar, an N phase leading-in bus bar and the like. The invention adopts a structural style of three mutually parallel power strings, and each power string realizes the compression joint of electric/electronic components with the corresponding connecting bus bars, the square water-cooling radiator and insulators by the pressing mechanism. In the invention, absorption circuits are compactly arranged, thereby decreasing the mutual stray inductance; and a waterway interface and a power circuit interface are separated and are arranged respectively in the front and at the back.
Description
Technical field
The invention belongs to the semiconductor switch technical field; A kind of novel integral gate change transistor (The Integrated Gate Commutated Thyristor particularly is provided; Be called for short IGCT) three level power module; It is applicable in 3～27MVA high-power converter, presses transmission field in can being widely used in.
Background technology
In the middle low power current transformer, employing be low power power electronic device, the application technology of device is ripe, allowance is enough high, failure rate is low, the reliability of whole system is higher.Yet big capacity current transformer is owing to integrate high voltage and big electric current, and device is desired quantity not sufficient, and the stray parameter influence is big, and the device heating amount is big, and the heat radiation difficulty makes the reliability of current transformer reduce greatly, becomes the obstacle of its all-round popularization.
Integral gate change transistor IGCT is the modified form device of on the basis of turn-off thyristor GTO, being done; It is as a kind of novel power electronic device; GTO chip and inverse parallel diode and gate drive circuit are integrated; Be connected with low inductance mode in the periphery with its gate driver again, in conjunction with the advantage of transistor and two kinds of devices of thyristor, i.e. the stable turn-off capacity of transistor and the low on-state loss of thyristor.IGCT is in the performance of conduction period performance thyristor, and off-phases is and is similar to characteristics of transistor.IGCT has that electric current is big, voltage is high, switching frequency is high, reliability is high, compact conformation, the low characteristics of loss.
Summary of the invention
The objective of the invention is to mix drive circuit again, a kind of embodiment that component placement is reasonable more, structure is compact more, heat-sinking capability is higher is provided in application through three level brachium pontis are integrated in the separate modular.
A kind of integral gate change transistor three-level power model; The main power electronic device that uses is IGCT, also has power electronic device in addition: neutral point clamp diode, inverse parallel fly-wheel diode, neutral point clamp resistance, absorption circuit (clamp absorbs electric capacity, clamp absorption diode, clamp soaking reactor, clamping capacitance inverse parallel absorption resistance).According to circuit diagram, the position of each power electric component of reasonable Arrangement constitutes the integral gate change transistor three-level power model.
A kind of integral gate change transistor three-level power model, overall dimensions are: (the wide x of high x is long, unit: mm), belong to the high-power semiconductor switch technical field for 480x680x650.It is the support of and arranged on left and right sides with right metal framework weldment 9 that the present invention adopts the left metal framework weldment 1 that is welded with thick shaped steel plate; Absorb capacitive branch busbar 39 to IGCT branch road busbar 36, neutral point clamp diode branch busbar 37, IGCT inverse parallel diode branch busbar 38, clamp through press-loading device 10; Respectively with six kinds of power electric components (IGCT, neutral point clamp diode, inverse parallel fly-wheel diode, clamp absorption diode, clamp absorb electric capacity, clamping capacitance inverse parallel absorption resistance), 11 crimping become three power strings that are parallel to each other to square water-filled radiator 12 with insulator, be fixed on left metal framework weldment 1, the right metal framework weldment 9.Three parallel placements of power string, the power electronic device that comprises realizes that through IGCT branch road busbar, neutral point clamp diode branch busbar, IGCT inverse parallel diode branch busbar circuit connects.Wherein, Power electronic device in first power string is IGCT, becomes the first power string to IGCT branch road busbar, IGCT, neutral point clamp diode branch busbar, IGCT inverse parallel diode branch busbar, square water-filled radiator and insulator combination crimping through press-loading device; Power electronic device in second power string is the inverse parallel fly-wheel diode, becomes the second power string to IGCT branch road busbar, inverse parallel fly-wheel diode, neutral point clamp diode branch busbar, IGCT inverse parallel diode branch busbar, square water-filled radiator and insulator combination crimping through press-loading device; Power electronic device in the 3rd power string is clamp absorption diode, neutral point clamp diode, through press-loading device two IGCT branch road busbars, clamp absorption diode, neutral point clamp diode, neutral point clamp diode branch busbar, absorb capacitive branch busbar, square water-filled radiator and insulator combination crimping and become the 3rd power string.Press-loading device 10 is linked in sequence and is formed by jacking block 27, outer-hexagonal closely-pitched pressure screw 29, spring guide 30, butterfly spring 31, pad 32.The square water-filled radiator 12 that uses among the present invention is aluminum alloy material, takes two sides heat radiations and press-fits the integration mode of power electronic device, and above wherein being plane of symmetry boring with the neutral surface at non-press-assembling surface simultaneously carries out water flowing with fixing water swivel; Two sides of non-press-assembling surface with above. holing respectively near intersection 5mm place, two sides, and be processed into 90 ° through hole, drawing the other end of spring 16 then to strike out 15 and be fixed on the insulated tension pole 14 through insulation fixedly to draw an end of spring 16; The press-assembling surface that press-fits power electronic device is not only in the two sides of square water-filled radiator, also this face by under constant bearing boring, fixed insulation steady pin 13, supporting power electronic device.Based on various machineries and electric requirement, the insulated tension pole 14 that is adopted among the present invention forms with the cast of the form of mould, and is pre-buried to the insulating material the inside an elongated metal screw, not only plays the effect of support left and right sides metal framework.Simultaneously; Particularity with its structure; Material to insulated tension pole requires than higher; Power unit module is simple and easy, machinery is installed property and high strength, had the machinery of certain stroke to uphold the property easily except that satisfying, and the insulating material of its metal screw coated outside also must have good electric insulating quality, to adapt to the electrical design requirement of high voltage, big electric current.Being fixed on insulation in the installation counterbore of insulated tension pole 14, to strike out 15 be that form cast with mould forms, and insulation is struck out, and 15 fixedly draw earlier ends of spring 16, and the other end that draws spring 16 is continuous with square water-filled radiator 12.Draw spring 16, insulation steady pin 13 and insulated tension pole 14, insulation to strike out 15 design feature when having solved replacing IGCT and diode element, fixing because of square water-filled radiator, be prone to the problem of being scattered.
The integral gate change transistor three-level power model, it is compact to absorb circuit arrangement.Clamp absorption resistance 20 is installed in the bottom of the 3rd power string; Clamp soaking reactor 19 is installed in the outside of left and right metal framework weldment respectively; Neutral point clamp resistance 8 is installed in the madial wall top of left and right metal framework weldment; Clamping capacitance inverse parallel absorption resistance 7 absorbs electric capacity 6 by absorbing the front portion that the capacitive branch busbar is fixed on the 3rd power string with clamp, and mutual spacing is from very little, and it is compact to distribute, between the connection copper bar very short, thereby reduced mutual stray inductance.The clamp soaking reactor that adopts among the present invention is the water cooling reactor of patty.Its interior shape is not common solenoid but patty, and its purpose is to reduce the volume of reactor, controls volume of the present invention better.With the less solenoid of copper pipe coiled diameter of inwall nickel plating, coil into circularly again, form circle and cut a parallel power string, be fixed on left metal framework weldment 1, the right metal framework weldment 9.Three parallel placements of power string, the power electronic device that comprises realizes that through IGCT branch road busbar, neutral point clamp diode branch busbar, IGCT inverse parallel diode branch busbar circuit connects.Wherein, Power electronic device in first power string is IGCT, becomes the first power string to IGCT branch road busbar, IGCT, neutral point clamp diode branch busbar, IGCT inverse parallel diode branch busbar, square water-filled radiator and insulator combination crimping through press-loading device; Power electronic device in second power string is the inverse parallel fly-wheel diode, becomes the second power string to IGCT branch road busbar, inverse parallel fly-wheel diode, neutral point clamp diode branch busbar, IGCT inverse parallel diode branch busbar, square water-filled radiator and insulator combination crimping through press-loading device; Power electronic device in the 3rd power string is clamp absorption diode, neutral point clamp diode, through press-loading device two IGCT branch road busbars, clamp absorption diode, neutral point clamp diode, neutral point clamp diode branch busbar, absorb capacitive branch busbar, square water-filled radiator and insulator combination crimping and become the 3rd power string.Press-loading device 10 is linked in sequence and is formed by jacking block 27, outer-hexagonal closely-pitched pressure screw 29, spring guide 30, butterfly spring 31, pad 32.The square water-filled radiator 12 that uses among the present invention is aluminum alloy material, takes two sides heat radiations and press-fits the integration mode of power electronic device, and above wherein being plane of symmetry boring with the neutral surface at non-press-assembling surface simultaneously carries out water flowing with fixing water swivel; Two sides of non-press-assembling surface with above. holing respectively near intersection 5mm place, two sides, and be processed into 90 ° through hole, drawing the other end of spring 16 then to strike out 15 and be fixed on the insulated tension pole 14 through insulation fixedly to draw an end of spring 16; The press-assembling surface that press-fits power electronic device is not only in the two sides of square water-filled radiator, also this face by under constant bearing boring, fixed insulation steady pin 13, supporting power electronic device.Based on various machineries and electric requirement, the insulated tension pole 14 that is adopted among the present invention forms with the cast of the form of mould, and is pre-buried to the insulating material the inside an elongated metal screw, not only plays the effect of support left and right sides metal framework.Simultaneously; Particularity with its structure; Material to insulated tension pole requires than higher; Power unit module is simple and easy, machinery is installed property and high strength, had the machinery of certain stroke to uphold the property easily except that satisfying, and the insulating material of its metal screw coated outside also must have good electric insulating quality, to adapt to the electrical design requirement of high voltage, big electric current.Being fixed on insulation in the installation counterbore of insulated tension pole 14, to strike out 15 be that form cast with mould forms, and insulation is struck out, and 15 fixedly draw earlier ends of spring 16, and the other end that draws spring 16 is continuous with square water-filled radiator 12.Draw spring 16, insulation steady pin 13 and insulated tension pole 14, insulation to strike out 15 design feature when having solved replacing IGCT and diode element, fixing because of square water-filled radiator, be prone to the problem of being scattered.
The integral gate change transistor three-level power model, it is compact to absorb circuit arrangement.Clamp absorption resistance 20 is installed in the bottom of the 3rd power string; Clamp soaking reactor 19 is installed in the outside of left and right metal framework weldment respectively; Neutral point clamp resistance 8 is installed in the madial wall top of left and right metal framework weldment; Clamping capacitance inverse parallel absorption resistance 7 absorbs electric capacity 6 by absorbing the front portion that the capacitive branch busbar is fixed on the 3rd power string with clamp, and mutual spacing is from very little, and it is compact to distribute, between the connection copper bar very short, thereby reduced mutual stray inductance.The clamp soaking reactor that adopts among the present invention is the water cooling reactor of patty.Its interior shape is not common solenoid but patty, and its purpose is to reduce the volume of reactor, controls volume of the present invention better.With the less solenoid of copper pipe coiled diameter of inwall nickel plating, coil into circularly again, form circle and cut system and occur unusually, cause component wear, then need to damage element replacement, the design of three string datas more helps element replacement.For the single tandem design, whichsoever component wear all must thoroughly be dismantled whole power model, is not easy to maintenance.And three string data structures can be operated to the power string that damages, and need not touch all the other intact power strings.
The advantage of integral gate change transistor three-level power model is: adopted the design of three unique power string datas that are parallel to each other, can reduce the equivalent inductance in this change of current loop.Also help maintenance, maintenance and the element replacement of power model simultaneously.Four class interfaces that adopt can be distinguished independent operate as normal, do not disturb operation separately each other.The compact conformation of power model, bulk is little, and assembling is simple, convenient, is applicable to the high-power IGCT current transformer of 3～27MVA.
Description of drawings
Fig. 1 is a circuit diagram of the present invention, and wherein, L1-L2 is the clamp soaking reactor; R1-R4 is the clamp absorption resistance, and D1-D2 is the clamp absorption diode, and C1-C4 is that clamp absorbs electric capacity; R5-R6 is a clamping capacitance inverse parallel resistance, and D3-D4 is the neutral point clamp diode, and R7-R10 is a neutral point clamp resistance; D5-D8 is the inverse parallel fly-wheel diode, and S1-S4 is the IGCT element.
Fig. 2 is structure chart of the present invention (front).Wherein, left metal framework weldment 1, IGCT element 2, inverse parallel fly-wheel diode 3, clamp absorption diode 4, neutral point clamp diode 5, clamp absorb that electric capacity 6, clamping capacitance inverse parallel absorption resistance 7, neutral point clamp resistance 8, right metal framework weldment 9, press-loading device 10, insulator 11, square water-filled radiator 12, insulation steady pin 13, insulated tension pole 14, insulation are struck out 15, drawn spring 16, confessions/backwater femalely manages 17, confession/backwater butt welding ball valve 18, clamp soaking reactor 19.
Fig. 3 is structure chart of the present invention (back side).Wherein, clamp absorption resistance 20, P phase inlet wire busbar 21, P phase outlet busbar group 22, M phase outlet busbar 23, square water cooling reactor overlap joint busbar 24, N phase outlet busbar group 25, N phase inlet wire busbar 26, supporting insulator 27.
Fig. 4 is the structure chart of press-loading device.Wherein, jacking block 28, outer-hexagonal closely-pitched pressure screw 29, spring guide 30, disk spring 31, pad 32.
Fig. 5 is the connection sketch map of N phase outlet busbar group.Wherein, soaking reactor branch road busbar 33, absorption inductor branch road busbar 34, N phase outlet busbar 35, IGCT branch road busbar 36, neutral point clamp diode branch busbar 37, IGCT inverse parallel diode branch busbar 38, absorption capacitive branch busbar 39.
Fig. 6 is the connection sketch map of P phase outlet busbar group.Wherein, soaking reactor branch road busbar 33, absorption inductor branch road busbar 34, P phase outlet busbar 40, IGCT branch road busbar 36, neutral point clamp diode branch busbar 37, IGCT inverse parallel diode branch busbar 38, absorption capacitive branch busbar 39.
Embodiment
Fig. 2 is one embodiment of the present invention.Comprise: left metal framework weldment 1; Right metal framework weldment 9; IGCT element 2; Square water-filled radiator 12; Press-loading device 10; Insulator 11; Inverse parallel diode 3; Clamp absorption diode 4; Neutral point clamp diode 5; Clamp absorbs electric capacity 6; Clamping capacitance inverse parallel resistance 7; Clamp absorption resistance 20; Clamp soaking reactor 19; Neutral point clamp resistance 8; Draw spring 16; Insulated tension pole 14; Insulation steady pin 13; Insulation strikes out 15; Turnover jellyfish pipe 17; Inlet and outlet water ball valve 18; P phase outlet busbar group 22; N phase outlet busbar group 25; P phase inlet wire busbar 21; N phase inlet wire busbar 26; M phase outlet busbar 23; Square water cooling reactor overlap joint busbar 24 etc.It is the support of and arranged on left and right sides with right metal framework weldment 9 that the present invention adopts the left metal framework weldment 1 that is welded with thick shaped steel plate; Absorb capacitive branch busbar 39 to IGCT branch road busbar 36, neutral point clamp diode branch busbar 37, IGCT inverse parallel diode branch busbar 38, clamp through press-loading device 10; Respectively with six kinds of power electric components (IGCT, neutral point clamp diode, inverse parallel fly-wheel diode, clamp absorption diode, clamp absorb electric capacity, clamping capacitance inverse parallel absorption resistance), 11 crimping become three power strings that are parallel to each other to square water-filled radiator 12 with insulator, be fixed on left metal framework weldment 1, the right metal framework weldment 9.Wherein, the power electronic device in first power string is IGCT, and the power electronic device in second power string is the inverse parallel fly-wheel diode, and the power electronic device in the 3rd the power string is clamp absorption diode, neutral point clamp diode.Press-loading device 10 is made up of jacking block 28, outer-hexagonal closely-pitched pressure screw 29, spring guide 30, butterfly spring 31, pad 32.Clamp absorption resistance 20 distributes in the bottom of the 3rd power string; Clamp soaking reactor 19 is distributed in the outside of left and right metal framework; Neutral point clamp resistance 8 is installed in the madial wall top of left and right metal framework, and clamping capacitance inverse parallel absorption resistance 7 absorbs electric capacity 6 by absorbing the front portion that the capacitive branch busbar is fixed on the 3rd power string with clamp.
Among the present invention; The female pipe 17 of confession/backwater is installed in first power string, i.e. the bottom space that stays of IGCT control circuit interface, and confessions/backwater butt welding ball valve 18 is installed in confessions/backwater mother and manages confession/backwater end of 17; Supply/return to be distributed with some water swivels above female pipe; Fixed some capillary flexible pipes and linked to each other and conducting, formed the circulation waterway of a cover sealing, to realize the cooling of recirculated cooling water each electron electric power element with each square water-filled radiator, clamp absorption resistance, clamp soaking reactor.
P phase outlet busbar group is in a side of left metal framework weldment 1, is connected to form through soaking reactor branch road busbar 33, absorption inductor branch road busbar 34, P phase outlet busbar 40, IGCT branch road busbar 36 by the square water-filled radiator of the leftmost side of the 3rd power string clamp soaking reactor with the left side; N phase outlet busbar group is in a side of right metal framework weldment 9, is connected to form through soaking reactor branch road busbar 33, absorption inductor branch road busbar 34, N phase outlet busbar 35, IGCT branch road busbar 36 by the square water-filled radiator of the rightmost side of the 3rd power string clamp soaking reactor with the right side; The P phase inlet wire busbar 21, the N phase inlet wire busbar 26 that are fixed on the clamp soaking reactor 19 are respectively the external busbars of power model; Square water-filled radiator in the middle of first power string links to each other with square water-filled radiator overlap joint busbar 24, as M phase outlet busbar 23.
Claims (8)
1. integral gate change transistor three-level power model is characterized in that: power model comprises the female pipe of the first power string, the second power string, the 3rd power string and confession/backwater; The two ends of three power strings are separately fixed on left metal framework weldment (1) and the right metal framework weldment (9); Three parallel placements of power string, the power electronic device that comprises realizes that through IGCT branch road busbar, neutral point clamp diode branch busbar, IGCT inverse parallel diode branch busbar circuit connects; Power electronic device in first power string is IGCT, becomes the first power string to IGCT branch road busbar, IGCT, neutral point clamp diode branch busbar, IGCT inverse parallel diode branch busbar, square water-filled radiator and insulator combination crimping through press-loading device; Power electronic device in second power string is the inverse parallel fly-wheel diode, becomes the second power string to IGCT branch road busbar, inverse parallel fly-wheel diode, neutral point clamp diode branch busbar, IGCT inverse parallel diode branch busbar, square water-filled radiator and insulator combination crimping through press-loading device; Power electronic device in the 3rd power string is clamp absorption diode, neutral point clamp diode, through press-loading device two IGCT branch road busbars, clamp absorption diode, neutral point clamp diode, neutral point clamp diode branch busbar, absorb capacitive branch busbar, square water-filled radiator and insulator combination crimping and become the 3rd power string;
Clamp absorption resistance (20) is installed in the bottom of the 3rd power string; Clamp soaking reactor (19) is installed in the outside of left and right metal framework weldment respectively; Neutral point clamp resistance (8) is installed in the madial wall top of left and right metal framework weldment;
Clamping capacitance inverse parallel absorption resistance (7) and clamp absorb electric capacity (6) by absorbing the front portion that the capacitive branch busbar is fixed on the 3rd power string; Neutral point clamp resistance (8), clamp soaking reactor (19) are placed on the 3rd power string both sides nearby; IGCT branch road busbar (36) and neutral point clamp diode branch busbar (37) are parallel to each other to run through and are fitted in three power strings; In the P-O commutation course; Rate of change is opposite with the sense of current between neutral point clamp diode branch busbar (37) is consistent for IGCT branch road busbar (36), and coupling inductance equivalent inductance between the two plays weakening;
Power model has four class interfaces: the mechanical interface by four supporting insulators that are separately fixed on left metal framework weldment and the right metal framework weldment constitute is used for power model is fixed on cabinet; The power circuit interface is used to be electrically connected; Water route interface by the confession/backwater butt welding ball valve (18) that is fixed on the female pipe of confession/backwater constitutes is used for linking to each other with the outer loop cooling water channel; By the control circuit interface that IGCT draws, be used for linking to each other with external control system; In the front portion of power model, the female pipe of the fixing confession/backwater of the bottom space that the control circuit interface that utilizes IGCT to draw stays; And at the rear portion of power model; The power circuit interface that layout is made up of P phase inlet wire busbar, P phase outlet busbar group, M phase outlet busbar, N phase outlet busbar group, N phase inlet wire busbar: P phase outlet busbar group is in a side of left metal framework weldment (1), is connected to form through soaking reactor branch road busbar (33), absorption inductor branch road busbar (34), P phase outlet busbar (40), IGCT branch road busbar (36) by the square water-filled radiator of the leftmost side of the 3rd power string clamp soaking reactor with the left side; N phase outlet busbar group is in a side of right metal framework weldment (9), is connected to form through soaking reactor branch road busbar (33), absorption inductor branch road busbar (34), N phase outlet busbar (35), IGCT branch road busbar (36) by the square water-filled radiator of the rightmost side of the 3rd power string clamp soaking reactor with the right side; The P phase inlet wire busbar (21), the N phase inlet wire busbar (26) that are fixed on the clamp soaking reactor (19) are respectively the external busbars of power model; Square water-filled radiator in the middle of first power string links to each other with square water-filled radiator overlap joint busbar (24), as M phase outlet busbar (23).
2. integral gate change transistor three-level power model as claimed in claim 1 is characterized in that: described press-loading device is linked in sequence by jacking block (27), outer-hexagonal closely-pitched pressure screw (28), butterfly spring (30), spring guide (29) and pad (31) and forms.
3. integral gate change transistor three-level power model as claimed in claim 1; It is characterized in that: described square water-filled radiator is taked two sides heat radiations and is press-fited the integration mode of power electronic device, and above wherein being plane of symmetry boring with the neutral surface at non-press-assembling surface simultaneously carries out water flowing with fixing water swivel; Two sides of non-press-assembling surface and above holing respectively near intersection 5mm place, two sides, and be processed into 90 ° through hole fixedly to draw an end of spring (16), draw the other end of spring (16) then to strike out (15) and be fixed on the insulated tension pole (14) through insulation; The press-assembling surface that press-fits power electronic device is not only in the two sides of square water-filled radiator, also this face by under constant bearing boring, fixed insulation steady pin (13), supporting power electronic device.
4. integral gate change transistor three-level power model as claimed in claim 3 is characterized in that: described square water-filled radiator is an aluminum alloy material.
5. integral gate change transistor three-level power model as claimed in claim 3 is characterized in that: described insulated tension pole forms with the form cast of mould, and is pre-buried to the insulating material the inside an elongated metal screw.
6. integral gate change transistor three-level power model as claimed in claim 3 is characterized in that: the form cast that described insulation is struck out with mould forms; The end that spring (16) is fixedly drawn earlier in (15) is struck out in insulation, draws the other end of spring (16) to link to each other with square water-filled radiator (12).
7. integral gate change transistor three-level power model as claimed in claim 1; It is characterized in that: described clamp soaking reactor adopts the water cooling reactor of patty; The less solenoid of copper pipe coiled diameter with inwall nickel plating; Coil into circularly again, form circular section looping snail spool, water flowing is used for cooling in the copper pipe.
8. integral gate change transistor three-level power model as claimed in claim 1; It is characterized in that: the female pipe of described confession/backwater is installed in the bottom of the power electronic device IGCT of first power string; Confession/backwater butt welding ball valve (18) is installed in the confession/backwater end of the female pipe of confession/backwater (17); Be distributed with some water swivels above the female pipe of confession/backwater; Fixed one or more capillaries and linked to each other and conducting, formed the circulation waterway of a cover sealing, to realize the cooling of recirculated cooling water each power electronic device with each square water-filled radiator, clamp absorption resistance, clamp soaking reactor; When keep in repair at the user scene, need to change power electronic device, through the confession/backwater butt welding ball valve (18) on the earlier closed female pipe of confession/backwater (17); Block the current of ingoing power module; Dismantle the movable joint of its right-hand member again, break off, keep in repair then and change with the external water cooling system.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010623295 CN102064676B (en) | 2010-12-30 | 2010-12-30 | Integrated gate commutated thyristor (IGCT) three-level power module |
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| CN 201010623295 CN102064676B (en) | 2010-12-30 | 2010-12-30 | Integrated gate commutated thyristor (IGCT) three-level power module |
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| CN102064676B true CN102064676B (en) | 2012-11-28 |
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| CN103116080B (en) * | 2013-01-29 | 2014-12-24 | 上海电气集团股份有限公司 | Circuit and method for measuring stray inductance of current conversion circuit of three-level converter |
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| CN103219909B (en) * | 2013-03-29 | 2015-05-27 | 上海交通大学 | Integrated gate commutated thyristor five-level power module |
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| CN105071638B (en) * | 2015-08-14 | 2017-11-10 | 南车株洲电力机车研究所有限公司 | A kind of two electrical level power modules based on IGCT |
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| CN114257108A (en) * | 2020-09-22 | 2022-03-29 | 株洲变流技术国家工程研究中心有限公司 | Three-level converter module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1645724A (en) * | 2005-03-10 | 2005-07-27 | 冶金自动化研究设计院 | Commutating crystal brake tube power-phase module of impacted integrated gate pole |
| CN101001044A (en) * | 2007-01-04 | 2007-07-18 | 冶金自动化研究设计院 | High-tension integral gate change transistor three-level frequency-converter power cabinet |
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