CN1645724A - Commutating crystal brake tube power-phase module of impacted integrated gate pole - Google Patents
Commutating crystal brake tube power-phase module of impacted integrated gate pole Download PDFInfo
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- CN1645724A CN1645724A CNA2005100534480A CN200510053448A CN1645724A CN 1645724 A CN1645724 A CN 1645724A CN A2005100534480 A CNA2005100534480 A CN A2005100534480A CN 200510053448 A CN200510053448 A CN 200510053448A CN 1645724 A CN1645724 A CN 1645724A
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- string
- igct
- radiator
- power
- phase module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Power Conversion In General (AREA)
Abstract
The invention consists of IGCT, clamping resistor, clamping reactor, pressing frame, threaded rod, radiator, clamping capacitor, power connecting terminal, diode, connecting bar and some pressing components. The IGCT, diode and radiate are compressed in series into three series components paralleled each other by using pressing frame, threaded rod and other pressing component. Three series component shares the pressing frame locating at both sides of it, and the claming resistor locates at both sides of the front of three series components. The claming reactor locates at both sides of series component. The clamping capacitor is clamped at the middle of the series components by connecting bar.
Description
Technical field
The invention belongs to the semiconductor switch technical field, a kind of impacted integrated gate pole change transistor (being IGCT) power-phase module particularly is provided, it is applicable in 3～27MVA high-power converter, this IGCT power-phase module is combined, just can constitute a high-power active rectifier or inverter, press transmission field in being widely used in.
Background technology
Integral gate change transistor IGCT is the power semiconductor switch that Switzerland ABB AB aims at the medium voltage frequency converter exploitation.IGCT makes the design of frequency converter fundamentally reduce complexity based on very ripe GTO (gate turn off thyristor) technology, has improved efficient and reliability.IGCT integrates the speed-sensitive switch characteristic of IGBT (insulation gate pole bipolar transistor) and high blocking voltage and the low conduction loss characteristic of GTO (gate turn off thyristor).The high-speed switch ability of IGCT need not buffer circuit, thereby required power component number still less, and reliability of operation is higher.The application technology of IGCT is very ripe in the world at present, but but also is in the starting stage at home, does not also have the matured product of IGCT current transformer to come out.Complete IGCT active rectifying circuit or inverter circuit comprise IGCT, inverse parallel diode, clamp circuit device etc., if these components and parts are disperseed to be electrically connected with bus or lead after the assembling again, not only its to take volume bigger, and the line loop area is bigger, thereby causes the assorted living inductance of circuit to increase.Assorted increase of giving birth to inductance can make the shutoff voltage of IGCT raise, and at this time for the safety that guarantees IGCT just must reduce output current, thereby causes reducing of power output.In addition, the IGCT (PCC) power disperses to install, and also is unfavorable for the carrying out of maintenance work.
Summary of the invention
The object of the present invention is to provide a kind of compact IGCT power-phase module, it is integrated in one all devices, and loading and unloading are convenient, compact conformation, and volume is less, and the assorted living inductance of connection line is less, and power output can reach designing requirement.
Structure of the present invention as shown in Figure 1, it comprises: connection bus 10 and some other compressing structure assembly between IGCT1, clamp resistance 2, clamp reactor 3, clamping frame 4, screw rod 5, radiator 6, clamping capacitance device 7, power splicing ear 8, diode 9, string.Clamping frame 4, screw rod 5 and other compressing structure assembly are compacted into series connection such as IGCT1, diode 9, radiator 6 the string assembly of three be parallel to each other " parallel connections ", the clamping frame 4 of three shared both sides of string assembly, clamp resistance 2 is positioned at the anterior left and right sides of string, clamp reactor 3 is positioned at this string left and right sides, and clamping capacitance device 7 is connected bus clip and is held in this string rear middle part.
Described IGCT power-phase module is to be realized by being electrically connected by connection bus between string 10 of semiconductor device such as IGCT1, diode 9, between string connection bus 10 be vertically be pressed in three the string assemblies between, the end face of the semiconductor device that is connected and the end face of radiator 6 are close in its surface.
Described radiator 6 is water-filled radiator both, also can be air-cooled radiator.
The invention has the advantages that: each components and parts in the IGCT application circuit are integrated in the power model; not only effectively reduced and taken volume; improved the power density of current transformer; and the modularized design of power facies unit helps work such as the installation, debugging of system; having improved operating efficiency, also is that maintenance and the maintenance work of minimum downtime lays the foundation simultaneously.Loading and unloading are convenient, compact conformation, and volume is less, and the assorted living inductance of connection line is less.
Description of drawings
Fig. 1 is a kind of structural representation of the present invention.Wherein, connection bus 10 between IGCT1, clamp resistance 2, clamp reactor 3, clamping frame 4, screw rod 5, radiator 6, clamping capacitance device 7, power splicing ear 8, diode 9, string.
Fig. 2 is IGCT1 of the present invention, diode 9, radiator 6, clamping capacitance device and serial connection connection bus 10 structural representations.
Embodiment
Fig. 1, Fig. 2 are a kind of embodiment of the present invention.Wherein, connection bus 10 has six connection buss between string, and connection bus is straight tabular.During assembling, stacked bus 10 is close to the end face of semiconductor device end face such as IGCT1, diode 9 and radiator 6 and compacted between string, thereby realizes that three circuit between the component string connect.Stacked bus 10 is left and right sides symmetry installation between the string of described IGCT power model.
Circuit among the present invention between the semiconductor device such as IGCT, diode connects stacked bus realization between the employing string, and the serial connection connection bus is close to power device, structurally reduced the loop area of line, result of the test proves that this design can effectively reduce the assorted living inductance of connection line, has improved the power output of power-phase module and even whole current transformer.
Claims (4)
1. a commutating crystal brake tube power-phase module of impacted integrated gate pole comprises: connection bus (10) and some other compressing structure assembly between IGCT (1), clamp resistance (2), clamp reactor (3), clamping frame (4), screw rod (5), radiator (6), clamping capacitance device (7), power splicing ear (8), diode (9), string; It is characterized in that: clamping frame (4), screw rod (5) and other compressing structure assembly are compacted into IGCT (1), diode (9), radiator series connection such as (6) the string assembly of three be parallel to each other " parallel connections ", the clamping frame (4) of three shared both sides of string assembly, clamp resistance (2) is positioned at the anterior left and right sides of string, clamp reactor (3) is positioned at this string left and right sides, and clamping capacitance device (7) is connected bus clip and is held in this string rear middle part.
2. according to the described IGCT power-phase module of claim 1, it is characterized in that: being electrically connected by connection bus (10) between string of IGCT (1), diode (9) semiconductor device realizes, connection bus between string (10) is and vertically is pressed between three string assemblies, and is close to the end face of the semiconductor device that is connected.
3. according to the described IGCT power-phase module of claim 1, it is characterized in that: described radiator (6) is a water-filled radiator.
4. according to the described IGCT power-phase module of claim 1, it is characterized in that: described radiator (6) is an air-cooled radiator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100534480A CN100349370C (en) | 2005-03-10 | 2005-03-10 | Commutating crystal brake tube power-phase module of impacted integrated gate pole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100534480A CN100349370C (en) | 2005-03-10 | 2005-03-10 | Commutating crystal brake tube power-phase module of impacted integrated gate pole |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1645724A true CN1645724A (en) | 2005-07-27 |
| CN100349370C CN100349370C (en) | 2007-11-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100534480A Expired - Fee Related CN100349370C (en) | 2005-03-10 | 2005-03-10 | Commutating crystal brake tube power-phase module of impacted integrated gate pole |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100349370C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100466428C (en) * | 2006-12-25 | 2009-03-04 | 北京金自天正智能控制股份有限公司 | Medium power low voltage frequency converter based on insulation grating bipolar transistor |
| CN101860179A (en) * | 2010-06-09 | 2010-10-13 | 五力机电科技（昆山）有限公司 | Silicon controlled thyristor frequency conversion device |
| CN102064676A (en) * | 2010-12-30 | 2011-05-18 | 冶金自动化研究设计院 | Integrated gate commutated thyristor (IGCT) three-level power module |
| CN1862269B (en) * | 2006-02-23 | 2011-06-29 | 国电南京自动化股份有限公司 | Crimping uniformity checking method for high voltage IGCT inverse circuit |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5982646A (en) * | 1998-06-30 | 1999-11-09 | General Electric Company | Voltage clamp snubbers for three level converter |
| CN2507187Y (en) * | 2001-09-19 | 2002-08-21 | 李清权 | Intermediate voltage frequency-changing speed regulator |
| EP1298733A1 (en) * | 2001-09-28 | 2003-04-02 | ABB Schweiz AG | Turn-off high-power semiconductor device |
| CN100384074C (en) * | 2002-06-28 | 2008-04-23 | 河南电力试验研究所 | Five-level high-voltage frequency converter |
-
2005
- 2005-03-10 CN CNB2005100534480A patent/CN100349370C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1862269B (en) * | 2006-02-23 | 2011-06-29 | 国电南京自动化股份有限公司 | Crimping uniformity checking method for high voltage IGCT inverse circuit |
| CN100466428C (en) * | 2006-12-25 | 2009-03-04 | 北京金自天正智能控制股份有限公司 | Medium power low voltage frequency converter based on insulation grating bipolar transistor |
| CN101860179A (en) * | 2010-06-09 | 2010-10-13 | 五力机电科技（昆山）有限公司 | Silicon controlled thyristor frequency conversion device |
| CN102064676A (en) * | 2010-12-30 | 2011-05-18 | 冶金自动化研究设计院 | Integrated gate commutated thyristor (IGCT) three-level power module |
| CN102064676B (en) * | 2010-12-30 | 2012-11-28 | 冶金自动化研究设计院 | Integrated gate commutated thyristor (IGCT) three-level power module |
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| Publication number | Publication date |
|---|---|
| CN100349370C (en) | 2007-11-14 |
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Granted publication date: 20071114 Termination date: 20150310 |
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