CN102054911A - 发光二极管芯片及其制作方法和具有该芯片的发光二极管 - Google Patents
发光二极管芯片及其制作方法和具有该芯片的发光二极管 Download PDFInfo
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- CN102054911A CN102054911A CN2009101099475A CN200910109947A CN102054911A CN 102054911 A CN102054911 A CN 102054911A CN 2009101099475 A CN2009101099475 A CN 2009101099475A CN 200910109947 A CN200910109947 A CN 200910109947A CN 102054911 A CN102054911 A CN 102054911A
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- Prior art keywords
- light
- emitting diode
- electrode
- backlight unit
- diode chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Abstract
Description
Claims (15)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101099475A CN102054911B (zh) | 2009-10-29 | 2009-10-29 | 发光二极管芯片及其制作方法和具有该芯片的发光二极管 |
PCT/CN2010/075760 WO2011050640A1 (en) | 2009-10-29 | 2010-08-06 | Led, led chip and method of forming the same |
US13/457,955 US20120261702A1 (en) | 2009-10-29 | 2012-04-27 | Led, led chip and method of forming the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101099475A CN102054911B (zh) | 2009-10-29 | 2009-10-29 | 发光二极管芯片及其制作方法和具有该芯片的发光二极管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102054911A true CN102054911A (zh) | 2011-05-11 |
CN102054911B CN102054911B (zh) | 2013-03-13 |
Family
ID=43921300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101099475A Active CN102054911B (zh) | 2009-10-29 | 2009-10-29 | 发光二极管芯片及其制作方法和具有该芯片的发光二极管 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20120261702A1 (zh) |
CN (1) | CN102054911B (zh) |
WO (1) | WO2011050640A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120082715A (ko) * | 2011-01-14 | 2012-07-24 | 삼성엘이디 주식회사 | 반도체 발광소자 및 그 제조방법 |
CN102214751B (zh) * | 2011-06-07 | 2012-10-10 | 晶科电子(广州)有限公司 | 一种垂直结构的发光器件及其制造方法 |
CN106098889B (zh) | 2011-09-16 | 2019-02-15 | 首尔伟傲世有限公司 | 发光二极管及制造该发光二极管的方法 |
TWI597863B (zh) * | 2013-10-22 | 2017-09-01 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
CN104993031B (zh) * | 2015-06-12 | 2018-03-06 | 映瑞光电科技(上海)有限公司 | 高压倒装led芯片及其制造方法 |
CN105914275B (zh) * | 2016-06-22 | 2018-04-27 | 天津三安光电有限公司 | 倒装发光二极管及其制作方法 |
KR102427640B1 (ko) * | 2017-12-19 | 2022-08-01 | 삼성전자주식회사 | 자외선 반도체 발광소자 |
CN108933188A (zh) * | 2018-09-06 | 2018-12-04 | 武汉华星光电技术有限公司 | 发光二极管及使用所述发光二极管的背光模组 |
CN114388672B (zh) * | 2021-11-30 | 2023-06-09 | 华灿光电(浙江)有限公司 | 微型发光二极管芯片及其制备方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW564584B (en) * | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
JP3968566B2 (ja) * | 2002-03-26 | 2007-08-29 | 日立電線株式会社 | 窒化物半導体結晶の製造方法及び窒化物半導体ウエハ並びに窒化物半導体デバイス |
KR101183776B1 (ko) * | 2003-08-19 | 2012-09-17 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체 소자 |
CN100356592C (zh) * | 2004-01-06 | 2007-12-19 | 元砷光电科技股份有限公司 | 发光二极管及其制造方法 |
TWI281758B (en) * | 2004-04-28 | 2007-05-21 | Showa Denko Kk | Transparent positive electrode |
CN1993835A (zh) * | 2004-06-14 | 2007-07-04 | 三菱电线工业株式会社 | 氮化物半导体发光器件 |
KR100649496B1 (ko) * | 2004-09-14 | 2006-11-24 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 제조방법 |
US20060138443A1 (en) * | 2004-12-23 | 2006-06-29 | Iii-N Technology, Inc. | Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes |
TWI248691B (en) * | 2005-06-03 | 2006-02-01 | Formosa Epitaxy Inc | Light emitting diode and method of fabricating thereof |
JP4462249B2 (ja) * | 2005-09-22 | 2010-05-12 | ソニー株式会社 | 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系iii−v族化合物半導体の成長方法 |
CN2867600Y (zh) * | 2005-12-09 | 2007-02-07 | 璨圆光电股份有限公司 | 发光二极管封装结构 |
CN100585885C (zh) * | 2006-01-27 | 2010-01-27 | 杭州士兰明芯科技有限公司 | 蓝宝石衬底粗糙化的发光二极管及其制造方法 |
JP4637781B2 (ja) * | 2006-03-31 | 2011-02-23 | 昭和電工株式会社 | GaN系半導体発光素子の製造方法 |
JP5082752B2 (ja) * | 2006-12-21 | 2012-11-28 | 日亜化学工業株式会社 | 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子 |
CN101232060A (zh) * | 2007-01-26 | 2008-07-30 | 广镓光电股份有限公司 | 固态发光元件及其制作方法 |
JP4232837B2 (ja) * | 2007-03-28 | 2009-03-04 | 住友電気工業株式会社 | 窒化物半導体発光素子を作製する方法 |
US8101447B2 (en) * | 2007-12-20 | 2012-01-24 | Tekcore Co., Ltd. | Light emitting diode element and method for fabricating the same |
US8030666B2 (en) * | 2008-04-16 | 2011-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Group-III nitride epitaxial layer on silicon substrate |
-
2009
- 2009-10-29 CN CN2009101099475A patent/CN102054911B/zh active Active
-
2010
- 2010-08-06 WO PCT/CN2010/075760 patent/WO2011050640A1/en active Application Filing
-
2012
- 2012-04-27 US US13/457,955 patent/US20120261702A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2011050640A1 (en) | 2011-05-05 |
US20120261702A1 (en) | 2012-10-18 |
CN102054911B (zh) | 2013-03-13 |
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Effective date of registration: 20200113 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: 518118 Pingshan Road, Pingshan Town, Shenzhen, Guangdong, No. 3001, No. Patentee before: BYD Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |
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