CN102044463B - Photoresist coating monitoring method - Google Patents
Photoresist coating monitoring method Download PDFInfo
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- CN102044463B CN102044463B CN201010504710.XA CN201010504710A CN102044463B CN 102044463 B CN102044463 B CN 102044463B CN 201010504710 A CN201010504710 A CN 201010504710A CN 102044463 B CN102044463 B CN 102044463B
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- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Abstract
The invention provides a photoresist coating monitoring method. The method comprises a photoresist coating step and a strip check monitoring step; wherein the photoresist coating step is used for coating photoresist on a first silicon wafer according to a first photoresist coating quantity; the strip check monitoring step is used for checking whether strips exist on the surface of the first silicon water which is coated with the photoresist and obtained in the photoresist coating step or not. According to the monitoring method provided by the invention, a very simple mode of checking whether the strips exist on the surface of the silicon wafer can be adopted to accurately determine whether the photoresist coating quantity or the photoresist coating volume is enough, thereby accurately controlling the photoresist coating effect.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, specifically, the present invention relates to a kind of photoresist coating monitoring method.
Background technology
In ic manufacturing process, in order to obtain semiconductor device, in technical process, inevitably need coating photoresist (also referred to as photoresist) to etch semi-conducting material.In the coating procedure of photoresist, control photoresist coated weight or photoresist being applied to volume is very crucial, this is because the coating effect of photoresist directly has influence on the pattern of the semiconductor layer that etching technics below obtains, and this directly has influence on the performance of the follow-up semiconductor device obtained.
In the prior art, in order to control photoresist coated weight or photoresist coating volume, generally first determining the volume of required photoresist, then adopting the volume measurement tool of such as graduated cylinder and so on to measure the photoresist obtaining expectation body accumulated amount.
But, in such method, there are some defects.Specifically, on the one hand, for the volume of required photoresist, often can only determine a photoresist volume expected according to general calculating or experience, and in fact can not ensure that the photoresist volume that this is expected meets technique reality; On the other hand, often there is certain measured deviation in the volume measurement tool of such as graduated cylinder and so on, and this is again for the coating of actual photoresist brings some uncertain factors.In addition, the volume measurement tool of this interests graduated cylinder and so on is comparatively complicated to the method measured of photoresist coated weight estimated.
Therefore, it is desirable to propose a kind of method for supervising that simply accurately can control photoresist coating effect.
Summary of the invention
An object of the present invention is to provide a kind of method for supervising that simply accurately can control photoresist coating effect.
Therefore, according to an aspect of the present invention, provide a kind of photoresist coating monitoring method and comprise: photoresist coating step, for applying photoresist with the first photoresist coated weight on the first silicon chip; And striped checks monitoring step, for checking whether the surface being coated with photoresist of the first silicon chip that photoresist coating step obtains exists striped.
In fact, inventor advantageously finds, when photoresist coated weight deficiency time, by examining under a microscope the surface of the semi-conductor silicon chip after being coated with photoresist, can find elongated striped; On the contrary, if photoresist coated weight photoresist coating in other words volume is enough, then this elongated striped can not be found.According to this characteristic, by checking whether silicon chip surface exists this very simple mode of striped, can come very accurately to judge that whether photoresist coated weight (photoresist coating volume) is enough, thus accurately can control photoresist coating effect.
In above-mentioned photoresist coating monitoring method, checking in monitoring step at described striped, checking whether the surface being coated with photoresist of the first silicon chip that photoresist coating step obtains exists striped by examining under a microscope.
In above-mentioned photoresist coating monitoring method, described photoresist coating monitoring method also comprises: perform photoresist coating amount determining step when described striped checks in monitoring step and do not check out striped, described first photoresist coated weight is defined as final photoresist coating amount.Herein, " final photoresist coating amount " such as represents under present technological conditions, the stark suitable photoresist coated weight (photoresist coating volume) for desired photoetching agent pattern.
In above-mentioned photoresist coating monitoring method, described photoresist coating monitoring method also comprises: perform photoresist coating amount determining step when described striped checks in monitoring step and checks out striped, described photoresist coating amount determining step is for determining final photoresist coating amount.
In above-mentioned photoresist coating monitoring method, described photoresist coating amount determining step comprises: described first photoresist coated weight is added that volume change sum is as the second photoresist coated weight, and on the second silicon chip, applies photoresist with the second photoresist coated weight; And check whether the surface being coated with photoresist of the second silicon chip obtained exists striped.
According to a further aspect in the invention, provide a kind of photoresist coating monitoring method, comprising: photoresist coated weight setting steps, for arranging the N number of photoresist coated weight increased successively; Photoresist overall coat step, for coming respectively to N number of silicon chip coating photoresist with the described multiple photoresist coated weights increased successively, N be greater than 1 integer; And striped totally checks step, for checking whether the surface being coated with photoresist of described N number of silicon chip that photoresist overall coat step obtains exists striped successively.
In above-mentioned photoresist coating monitoring method, described photoresist coating monitoring method also comprises: the photoresist coated weight that there is not the silicon chip of striped checked out is at first defined as final photoresist coated weight.
In above-mentioned photoresist coating monitoring method, totally checking in step at described striped, checking whether the surface being coated with photoresist of described N number of silicon chip exists striped by examining under a microscope.
In above-mentioned photoresist coating monitoring method, in the described N number of photoresist coated weight increased successively, the difference of two photoresist coated weights of arbitrary neighborhood is fixing.
In above-mentioned photoresist coating monitoring method, in the described N number of photoresist coated weight increased successively, the difference of two photoresist coated weights of arbitrary neighborhood is adjustable.Like this, control to monitor precision by adjusted volume variable quantity.
Accompanying drawing explanation
Fig. 1 shows the flow chart of photoresist coating monitoring method according to an embodiment of the invention.
Fig. 2 show photoresist coated weight enough time the silicon chip surface schematic diagram examined under a microscope.
The silicon chip surface schematic diagram that Fig. 3 examines under a microscope when showing photoresist coated weight deficiency.
Fig. 4 shows the flow chart of photoresist coating monitoring method according to another embodiment of the present invention.
Fig. 5 shows the form that the flow process shown in Fig. 4 obtains.
It should be noted that, accompanying drawing is for illustration of the present invention, and unrestricted the present invention.
Embodiment
In order to make content of the present invention clearly with understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Referring now to Fig. 1 to Fig. 3, one embodiment of the present of invention are described.
Fig. 1 shows the flow chart of photoresist coating monitoring method according to an embodiment of the invention.
As shown in Figure 1, after starting, first apply photoresist in step S0.Subsequently, judge in step sl such as can see striped under the microscope.If can can't see striped under the microscope, namely judge to there is not striped (judgement of step S1 is N), thus be coated with by current photoresist and be defined as final suitable photoresist coated weight, flow process terminates.In accompanying drawing, Fig. 2 show photoresist coated weight enough time the silicon chip surface schematic diagram examined under a microscope.
On the other hand, if can striped be seen under the microscope in step sl, namely judge to there is striped (judgement of step S1 is Y), thus perform step S2.In step s 2, existing photoresist coated weight is increased a volume change D, and with new photoresist coated weight, photoresist coating is carried out to another wafer, and then perform step S1, to judge whether there is striped (such as, whether observe striped under the microscope), program performs down according to previously described mode subsequently.In accompanying drawing, the silicon chip surface schematic diagram examined under a microscope when Fig. 3 shows photoresist coated weight deficiency.
Preferably, fixing volume change D is adjustable, so just can control to monitor precision by adjusted volume variable quantity.
When photoresist coated weight deficiency time, by examining under a microscope the surface of the semi-conductor silicon chip after being coated with photoresist, elongated striped (judgement of step S1 is affirmative) can be found; On the contrary, if photoresist coated weight photoresist coating in other words volume is enough, then can not find this elongated striped (judgement of step S1 is what negate).According to this characteristic, by checking whether silicon chip surface exists this very simple mode of striped, can come very accurately to judge that whether photoresist coated weight (photoresist coating volume) is enough, thus accurately can control photoresist coating effect.
Fig. 4 shows the flow chart of photoresist coating monitoring method according to another embodiment of the present invention.
As shown in Figure 4, after starting, first step S11 arrange and the N number of photoresist coated weight V1 determining to increase successively, V2 ..., VN.Preferably, in the described N number of photoresist coated weight increased successively, the difference of two photoresist coated weights of arbitrary neighborhood is fixing.Alternatively, in the described N number of photoresist coated weight increased successively, the difference of two photoresist coated weights of arbitrary neighborhood is adjustable.Like this, control to monitor precision by adjusted volume variable quantity.Specifically, such as, volume increases progressively gradually with fixing volume change, such as, when fixing volume change D is 0.1ml, and V1=1ml, V2=1.1ml, V3=1.2ml, V4=1.3ml......VN=(0.9+0.1N) ml.
Subsequently, in step S22, come respectively to N number of silicon chip coating photoresist with the described multiple photoresist coated weights increased successively, N be greater than 1 integer.
After this, in step S33, check whether the surface being coated with photoresist of described N number of silicon chip that photoresist overall coat step obtains exists striped successively.Such as, check whether the surface being coated with photoresist of described N number of silicon chip exists striped by examining under a microscope.
Then, in step S44, determine final photoresist coated weight.Such as, the photoresist coated weight that there is not the silicon chip of striped checked out at first can be defined as final photoresist coated weight.
Or alternatively, the photoresist coated weight form corresponding with observed result can be set up according to obtained all results, such as, Fig. 5 shows corresponding form when N=9, D=0.1ml, under the photoresist coated weight of V1=1ml, V2=1.1ml, V3=1.2ml, V4=1.3ml, V5=1.4ml and V6=1.5ml, all observe silicon chip surface and there is striped, so just judge, all how much above-mentioned photoresist coated weight is all improper.
As shown in the table of figure 5, under the photoresist coated weight of V7=1.6ml, V8=1.7ml and V9=1.8ml, all observe silicon chip surface and there is not striped; But if photoresist coated weight is V8=1.7ml or V9=1.8ml, in fact photoresist is beyond required minimum photoresist coated weight, thus plussage is wasted, and is therefore also inappropriate in this sense.Like this, such as can judge that photoresist coated weight V7=1.6ml is proper photoresist coated weight, and be judged as final photoresist coated weight.
It will be apparent to those skilled in the art that and can carry out various change and distortion to the present invention without departing from the scope of the invention.Described embodiment is only for illustration of the present invention, instead of restriction the present invention; The present invention is not limited to described embodiment, but is only defined by the following claims.
Claims (6)
1. a photoresist coating monitoring method, is characterized in that, comprising:
Photoresist coating step, for applying photoresist with the first photoresist coated weight on the first silicon chip; And
Striped checks monitoring step, for checking whether the surface being coated with photoresist of the first silicon chip that photoresist coating step obtains exists striped;
Perform photoresist coating amount determining step when described striped checks in monitoring step and do not check out striped, described first photoresist coated weight is defined as final photoresist coating amount;
When checking out striped in described striped inspection monitoring step, described first photoresist coated weight is added that volume change sum is as the second photoresist coated weight, and on the second silicon chip, apply photoresist with the second photoresist coated weight, and check whether the surface being coated with photoresist of the second silicon chip obtained exists striped.
2. photoresist coating monitoring method according to claim 1, it is characterized in that, wherein checking in monitoring step at described striped, checking whether the surface being coated with photoresist of the first silicon chip that photoresist coating step obtains exists striped by examining under a microscope.
3. a photoresist coating monitoring method, is characterized in that, comprising:
Photoresist coated weight setting steps, for arranging the N number of photoresist coated weight increased successively;
Photoresist overall coat step, for coming respectively to N number of silicon chip coating photoresist with the described multiple photoresist coated weights increased successively, N be greater than 1 integer; And
Striped totally checks step, for checking whether the surface being coated with photoresist of described N number of silicon chip that photoresist overall coat step obtains exists striped successively, and the photoresist coated weight that there is not the silicon chip of striped checked out is at first defined as final photoresist coated weight.
4. photoresist coating monitoring method according to claim 3, is characterized in that, totally checks in step at described striped, checks whether the surface being coated with photoresist of described N number of silicon chip exists striped by examining under a microscope.
5. photoresist coating monitoring method according to claim 3, is characterized in that, in the wherein said N number of photoresist coated weight increased successively, the difference of two photoresist coated weights of arbitrary neighborhood is fixing.
6. photoresist coating monitoring method according to claim 3, is characterized in that, in the wherein said N number of photoresist coated weight increased successively, the difference of two photoresist coated weights of arbitrary neighborhood is adjustable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010504710.XA CN102044463B (en) | 2010-10-12 | 2010-10-12 | Photoresist coating monitoring method |
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| CN201010504710.XA CN102044463B (en) | 2010-10-12 | 2010-10-12 | Photoresist coating monitoring method |
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| CN102044463A CN102044463A (en) | 2011-05-04 |
| CN102044463B true CN102044463B (en) | 2015-04-15 |
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| KR20060064179A (en) * | 2004-12-08 | 2006-06-13 | 주식회사 하이닉스반도체 | Method for inspecting patterns of semiconductor devices |
| US7777184B2 (en) * | 2007-08-30 | 2010-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for photoresist characterization and analysis |
| TWI379998B (en) * | 2008-07-18 | 2012-12-21 | Inotera Memories Inc | Photoresist solution dispensing volume monitoring method |
| JP5275763B2 (en) * | 2008-11-27 | 2013-08-28 | ルネサスエレクトロニクス株式会社 | Mask defect inspection method and semiconductor device manufacturing method |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140516 |
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